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Schlotter et al., 1999 - Google Patents

Fabrication and characterization of GaN/InGaN/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs

Schlotter et al., 1999

Document ID
2701162022669741465
Author
Schlotter P
Baur J
Hielscher C
Kunzer M
Obloh H
Schmidt R
Schneider J
Publication year
Publication venue
Materials Science and Engineering: B

External Links

Snippet

We report on the fabrication as well as on the optical and electrical characterization of violet and blue GaN/InGaN/AlGaN double heterostructure light emitting diodes (DH LEDs) covering the 385–430 nm spectral range. MOCVD grown epitaxial layer sequences were …
Continue reading at www.sciencedirect.com (other versions)

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    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
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