Amhaz et al., 2010 - Google Patents
A high output voltage swing logarithmic image sensor designed with on chip FPN reductionAmhaz et al., 2010
- Document ID
- 2918387669433679197
- Author
- Amhaz H
- Sicard G
- Publication year
- Publication venue
- 6th Conference on Ph. D. Research in Microelectronics & Electronics
External Links
Snippet
A novel architecture of a CMOS image sensor dedicated to improve the output voltage swing of a simple logarithmic sensor, while conserving the simplicity and then the minimized area of the normal sensor, is proposed. This architecture presents a reduced fixed pattern noise …
- 238000005516 engineering process 0 abstract description 4
Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/335—Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
- H04N5/351—Control of the SSIS depending on the scene, e.g. brightness or motion in the scene
- H04N5/355—Control of the dynamic range
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/335—Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
- H04N5/369—SSIS architecture; Circuitry associated therewith
- H04N5/374—Addressed sensors, e.g. MOS or CMOS sensors
- H04N5/3745—Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/335—Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
- H04N5/369—SSIS architecture; Circuitry associated therewith
- H04N5/378—Readout circuits, e.g. correlated double sampling [CDS] circuits, output amplifiers or A/D converters
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/335—Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
- H04N5/357—Noise processing, e.g. detecting, correcting, reducing or removing noise
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/222—Studio circuitry; Studio devices; Studio equipment; Cameras comprising an electronic image sensor, e.g. digital cameras, video cameras, TV cameras, video cameras, camcorders, webcams, camera modules for embedding in other devices, e.g. mobile phones, computers or vehicles
- H04N5/225—Television cameras; Cameras comprising an electronic image sensor, e.g. digital cameras, video cameras, video cameras, camcorders, webcams, camera modules for embedding in other devices, e.g. mobile phones, computers or vehicles
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems
- H04N3/10—Scanning details of television systems by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
- H04N3/15—Scanning details of television systems by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
- H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor
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