Chen et al., 2012 - Google Patents
Design of Broadband Highly Efficient Harmonic-Tuned Power Amplifier Using In-Band Continuous Class-${\hbox {F}}^{-1}/{\hbox {F}} $ Mode TransferringChen et al., 2012
View PDF- Document ID
- 29114583109552420
- Author
- Chen K
- Peroulis D
- Publication year
- Publication venue
- IEEE transactions on microwave theory and techniques
External Links
Snippet
A novel methodology for designing high-frequency broadband harmonic-tuned power amplifiers (PAs) is presented in this paper. Specifically, a hybrid PA mode, transferring between continuous inverse Class-F and continuous Class-F, is for the first time employed to …
- 239000010754 BS 2869 Class F 0 abstract description 79
Classifications
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2176—Class E amplifiers
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/191—Tuned amplifiers
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
- H03F1/0216—Continuous control
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/204—A hybrid coupler being used at the output of an amplifier circuit
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Chen et al. | Design of Broadband Highly Efficient Harmonic-Tuned Power Amplifier Using In-Band Continuous Class-${\hbox {F}}^{-1}/{\hbox {F}} $ Mode Transferring | |
| Chen et al. | Design of adaptive highly efficient GaN power amplifier for octave-bandwidth application and dynamic load modulation | |
| Shakib et al. | A highly efficient and linear power amplifier for 28-GHz 5G phased array radios in 28-nm CMOS | |
| Calvillo-Cortes et al. | A package-integrated Chireix outphasing RF switch-mode high-power amplifier | |
| Pednekar et al. | RF-input load modulated balanced amplifier with octave bandwidth | |
| Chen et al. | Design of highly efficient broadband class-E power amplifier using synthesized low-pass matching networks | |
| François et al. | A fully integrated watt-level linear 900-MHz CMOS RF power amplifier for LTE-applications | |
| Li et al. | A SiGe envelope-tracking power amplifier with an integrated CMOS envelope modulator for mobile WiMAX/3GPP LTE transmitters | |
| Tuffy et al. | A simplified broadband design methodology for linearized high-efficiency continuous class-F power amplifiers | |
| Nghiem et al. | Design of concurrent multiband Doherty power amplifiers for wireless applications | |
| Barton et al. | Four-way microstrip-based power combining for microwave outphasing power amplifiers | |
| Mortazavi et al. | Integrated inverse class-F silicon power amplifiers for high power efficiency at microwave and mm-wave | |
| Park et al. | A highly linear dual-band mixed-mode polar power amplifier in CMOS with an ultra-compact output network | |
| Mimis et al. | Multichannel and wideband power amplifier design methodology for 4G communication systems based on hybrid class-J operation | |
| Sharma et al. | Broadband GaN class-E power amplifier for load modulated delta sigma and 5G transmitter applications | |
| Park et al. | Broadband CMOS stacked RF power amplifier using reconfigurable interstage network for wideband envelope tracking | |
| Sessou et al. | An Integrated 700–1200-MHz Class-F PA With Tunable Harmonic Terminations in 0.13-$\mu $ m CMOS | |
| Chen et al. | Design of broadband high-efficiency power amplifier using in-band Class-F− 1/F mode-transferring technique | |
| Son et al. | Pole-controlled wideband 120 GHz CMOS power amplifier for wireless chip-to-chip communication in 40-nm CMOS process | |
| Calvillo-Cortes et al. | A 70W package-integrated class-E Chireix outphasing RF power amplifier | |
| Curtis et al. | A Ka-Band doherty power amplifier with 25.1 dBm output power, 38% peak PAE and 27% back-off PAE | |
| Yan et al. | Design of a 4-W envelope tracking power amplifier with more than one octave carrier bandwidth | |
| Iqbal et al. | GaN HEMT based class-F power amplifier with broad bandwidth and high efficiency | |
| Lee et al. | A CMOS outphasing power amplifier with integrated single-ended Chireix combiner | |
| Piazzon et al. | A method for designing broadband Doherty power amplifiers |