Kteyan et al., 2025 - Google Patents
Electromigration Assessment in Power Grids with Account of Non-Uniform Temperature DistributionKteyan et al., 2025
View PDF- Document ID
- 3086411490823765636
- Author
- Kteyan A
- Choy J
- Sukharev V
- Moreau S
- Yi Y
- Bloom R
- Kim C
- Publication year
- Publication venue
- 2025 IEEE International Reliability Physics Symposium (IRPS)
External Links
Snippet
Validation of recently proposed methodology of electromigration (EM) assessment in power networks was achieved by fitting to measurements performed on dedicated test-structures when non-uniform temperature distribution generated by specially designed on-chip heaters …
- 238000009826 distribution 0 title abstract description 51
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/317—Testing of digital circuits
- G01R31/3181—Functional testing
- G01R31/3183—Generation of test inputs, e.g. test vectors, patterns or sequence
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/317—Testing of digital circuits
- G01R31/3181—Functional testing
- G01R31/3185—Reconfiguring for testing, e.g. LSSD, partitioning
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/317—Testing of digital circuits
- G01R31/31718—Logistic aspects, e.g. binning, selection, sorting of devices under test, tester/handler interaction networks, Test management software, e.g. software for test statistics or test evaluation, yield analysis
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/30—Marginal testing, e.g. varying supply voltage
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING; COUNTING
- G06F—ELECTRICAL DIGITAL DATA PROCESSING
- G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
- G06F17/50—Computer-aided design
- G06F17/5009—Computer-aided design using simulation
- G06F17/5036—Computer-aided design using simulation for analog modelling, e.g. for circuits, spice programme, direct methods, relaxation methods
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING; COUNTING
- G06F—ELECTRICAL DIGITAL DATA PROCESSING
- G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
- G06F17/50—Computer-aided design
- G06F17/5068—Physical circuit design, e.g. layout for integrated circuits or printed circuit boards
- G06F17/5081—Layout analysis, e.g. layout verification, design rule check
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/20—Measuring earth resistance; Measuring contact resistance, e.g. of earth connections, e.g. plates
- G01R27/205—Measuring contact resistance of connections, e.g. of earth connections
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Cheng et al. | Electrothermal analysis of VLSI systems | |
| Sukharev et al. | Electromigration check: Where the design and reliability methodologies meet | |
| Lienig | Introduction to electromigration-aware physical design | |
| Frost et al. | Reliant: a reliability analysis tool for VLSI interconnect | |
| Lienig et al. | Electromigration-aware physical design of integrated circuits | |
| Li et al. | A method for improving power grid resilience to electromigration-caused via failures | |
| Gong et al. | TSV extracted equivalent circuit model and an on-chip test solution | |
| Zhao et al. | Transient modeling of TSV-wire electromigration and lifetime analysis of power distribution network for 3D ICs | |
| Sun et al. | Accelerating electromigration aging for fast failure detection for nanometer ICs | |
| Li et al. | T-VEMA: A temperature-and variation-aware electromigration power grid analysis tool | |
| Najm et al. | Electromigration simulation and design considerations for integrated circuit power grids | |
| Huang et al. | Electromigration assessment for power grid networks considering temperature and thermal stress effects | |
| Alam et al. | Circuit level reliability analysis of Cu interconnects | |
| Lin et al. | Electromigration failure of circuit interconnects | |
| Chang et al. | Thermal Modeling and Analysis of Equivalent Thermal Properties for Advanced BEOL Stacks | |
| Kteyan et al. | Electromigration Assessment in Power Grids with Account of Non-Uniform Temperature Distribution | |
| Kteyan et al. | Electromigration assessment in power grids with account of redundancy and non-uniform temperature distribution | |
| Kteyan et al. | Novel methodology for temperature-aware electromigration assessment in on-chip power grid: simulations and experimental validation | |
| Li et al. | Thermal characterization and challenges of advanced interconnects | |
| Huang et al. | Numerical modeling and characterization of the stress migration behaviour upon various 90 nanometer Cu/Low k interconnects | |
| Wang et al. | Interconnect electromigration modeling based on chemical mechanical polishing process variation | |
| Choy et al. | Finite-difference methodology for full-chip electromigration analysis applied to 3D IC test structure: Simulation vs. experiment | |
| US6770847B2 (en) | Method and system for Joule heating characterization | |
| Bashir et al. | Towards a chip level reliability simulator for copper/low-k backend processes | |
| Rothe et al. | Reliability by design: avoiding migration-induced failure in IC interconnects |