Khorshidian et al., 2019 - Google Patents
A fully-integrated 2.6 GHz stacked switching power amplifier in 45nm SOI CMOS with> 2W output power and 43.5% efficiencyKhorshidian et al., 2019
- Document ID
- 329701173082757111
- Author
- Khorshidian M
- Krishnaswamy H
- Publication year
- Publication venue
- 2019 IEEE MTT-S International Microwave Symposium (IMS)
External Links
Snippet
Power generation in scaled silicon technologies is fundamentally challenged by the low breakdown voltage of silicon-based transistors and the low quality of silicon-based passive components. Consequently, sub-6GHz power amplifiers (PAs) typically exploit compound …
- 239000010753 BS 2869 Class E 0 abstract description 14
Classifications
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2176—Class E amplifiers
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
- H03F1/223—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/537—A transformer being used as coupling element between two amplifying stages
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45731—Indexing scheme relating to differential amplifiers the LC comprising a transformer
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| An et al. | Power-combining transformer techniques for fully-integrated CMOS power amplifiers | |
| US8558619B2 (en) | Silicon-on-insulator high power amplifiers | |
| Zhao et al. | A 40-nm CMOS E-band 4-way power amplifier with neutralized bootstrapped cascode amplifier and optimum passive circuits | |
| Chowdhury et al. | A fully integrated dual-mode highly linear 2.4 GHz CMOS power amplifier for 4G WiMax applications | |
| US10250192B2 (en) | Class-E outphasing power amplifier with efficiency and output power enhancement circuits and method | |
| Chen et al. | A broadband stacked power amplifier in 45-nm CMOS SOI technology | |
| EP2770634B1 (en) | Distributed power amplifier circuit | |
| US20130343106A1 (en) | RF Energy Recovery System | |
| Huang et al. | A K-band power amplifier with 26-dBm output power and 34% PAE with novel inductance-based neutralization in 90-nm CMOS | |
| US20100164645A1 (en) | Tunable Impedance Matching Circuit | |
| US10090810B2 (en) | Doherty amplifiers | |
| EP2204906B1 (en) | Distributed active transformer amplifier with differential power combiner | |
| US9450545B2 (en) | Dual-band semiconductor RF amplifier device | |
| WO2012064437A1 (en) | Transformer coupled distributed amplifier | |
| Zhao et al. | A 15 GHz-bandwidth 20dBm P SAT power amplifier with 22% PAE in 65nm CMOS | |
| Cui et al. | Stacking the deck for efficiency: RF-to millimeter-wave stacked CMOS SOI power amplifiers | |
| Chen et al. | A wideband RF power amplifier in 45-nm CMOS SOI technology with substrate transferred to AlN | |
| Fathi et al. | A 30.3 dBm 1.9 GHz-bandwidth 2× 4-array stacked 5.3 GHz CMOS power amplifier | |
| Ho et al. | CMOS power amplifier with novel transformer power combiner | |
| Khorshidian et al. | A fully-integrated 2.6 GHz stacked switching power amplifier in 45nm SOI CMOS with> 2W output power and 43.5% efficiency | |
| Salem et al. | A recursive house-of-cards digital power amplifier employing a λ/4-less Doherty power combiner in 65nm CMOS | |
| Lee et al. | A highly efficient GSM/GPRS quad-band CMOS PA module | |
| US20240039482A1 (en) | Broadband lna structure using offset active coupled segments | |
| Im et al. | A 1.9‐GHz silicon‐on‐insulator CMOS stacked‐FET power amplifier with uniformly distributed voltage stresses | |
| Chen et al. | A 94-GHz Power Amplifier with Transformer-based Two-way Power Combining in 65-nm CMOS |