Chen et al., 2023 - Google Patents
Ferroelectricity of pristine Hf0. 5Zr0. 5O2 films fabricated by atomic layer depositionChen et al., 2023
- Document ID
- 3414273281517904977
- Author
- Chen L
- Zhang X
- Feng G
- Liu Y
- Hao S
- Zhu Q
- Feng X
- Qu K
- Yang Z
- Qi Y
- Ivry Y
- Dkhil B
- Tian B
- Chu J
- Duan C
- Publication year
- Publication venue
- Chinese Physics B
External Links
Snippet
Hafnium-based ferroelectric films, remaining their ferroelectricity down to nanoscale thickness, present a promising application for low-power logic devices and nonvolatile memories. It has been appealing for researchers to reduce the required temperature to …
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