[go: up one dir, main page]

Barman et al., 2024 - Google Patents

Magnetoresistance in Spintronics Devices

Barman et al., 2024

Document ID
3675125412687494810
Author
Barman S
Sen M
Ganguly K
Publication year
Publication venue
Interdisciplinary Research in Technology and Management

External Links

Snippet

The giant magnetoresistance (GMR) phenomenon, which Albert Fert and Peter Grunberg discovered in 1988, gave rise to the science of spintronics and was honored with the 2007 Nobel Prize in Physics. A further degree of flexibility for device functioning is made possible …
Continue reading at www.taylorfrancis.com (other versions)

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices, e.g. Hall effect devices; using magneto-resistive devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/22—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using galvano-magnetic effects, e.g. Hall effects; using similar magnetic field effects
    • H01L27/222—Magnetic non-volatile memory structures, e.g. MRAM
    • H01L27/226—Magnetic non-volatile memory structures, e.g. MRAM comprising multi-terminal components, e.g. transistors
    • H01L27/228—Magnetic non-volatile memory structures, e.g. MRAM comprising multi-terminal components, e.g. transistors of the field-effect transistor type

Similar Documents

Publication Publication Date Title
Joshi Spintronics: A contemporary review of emerging electronics devices
Huai Spin-transfer torque MRAM (STT-MRAM): Challenges and prospects
US9812184B2 (en) Current induced spin-momentum transfer stack with dual insulating layers
CN101896976B (en) High speed low power magnetic devices based on current induced spin-momentum transfer
US9449668B2 (en) Current induced spin-momentum transfer stack with dual insulating layers
US8760915B2 (en) High speed low power magnetic devices based on current induced spin-momentum transfer
Wang et al. Electric-field control of spin-orbit interaction for low-power spintronics
Slaughter Materials for magnetoresistive random access memory
Zabel Progress in spintronics
JP5847190B2 (en) Bipolar spin transfer inversion
US12068746B2 (en) Magnetic logic device, circuit having magnetic logic devices, and methods for controlling the magnetic logic device and the circuit
Jose et al. Multiferroics for spintronic applications
Barman et al. Magnetoresistance in Spintronics Devices
Yoda MRAM Fundamentals and devices
Wang et al. Spin transfer torque random access memory
Musa ADVANCEMENTS AND APPLICATIONS IN SEMICONDUCTOR SPINTRONICS: HARNESSING ELECTRON SPIN FOR NEXT-GENERATION DEVICES
Dieny et al. Spintronic devices for memory and logic applications
Bandiera et al. Magnetic Random Access Memories
Pingale et al. Utilization of Spintronics
Han TMR and Al-O based magnetic tunneling junctions
KR20250094521A (en) Magnetic memory device including tunneling magnetoresistance layer and memory apparatus including the same
BĂJENESCU Challenges of Spintronics.
Baldi 10 Spintronics
Khalili et al. Electric field-induced switching for magnetic memory devices
Patil Utilization of Spintronics