Liu et al., 2020 - Google Patents
50-GHz repetition gain switching using a cavity-enhanced DFB laser assisted by optical injection lockingLiu et al., 2020
View PDF- Document ID
- 3712940139936957320
- Author
- Liu Z
- Matsui Y
- Schatz R
- Khan F
- Kwakernaak M
- Sudo T
- Publication year
- Publication venue
- Journal of Lightwave Technology
External Links
Snippet
We demonstrate pulse generation at a repetition rate of 50 GHz by gain switching an injection-locked distributed feedback (DFB) laser. The small-signal BW of the DFB laser was enhanced from an intrinsic BW of 30 GHz to 52 GHz due to the joint effects of photon-photon …
- 230000003287 optical 0 title abstract description 47
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/501—Structural aspects
- H04B10/503—Laser transmitters
- H04B10/505—Laser transmitters using external modulation
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/501—Structural aspects
- H04B10/503—Laser transmitters
- H04B10/504—Laser transmitters using direct modulation
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/501—Structural aspects
- H04B10/506—Multi-wavelength transmitters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/516—Details of coding or modulation
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
- H01S5/06216—Pulse modulation or generation
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation; Circuits therefor
- H01S5/0427—Electrical excitation; Circuits therefor for applying modulation to the laser
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/25—Arrangements specific to fibre transmission
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection; Self pulsating
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S3/00—Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Pulse generation, e.g. Q-switching, mode locking
- H01S3/1106—Mode locking
- H01S3/1121—Harmonically mode-locked lasers, e.g. modulation frequency equals multiple integers or a fraction of the resonator roundtrip time
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/146—External cavity lasers using a fiber as external cavity
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Liu et al. | 50-GHz repetition gain switching using a cavity-enhanced DFB laser assisted by optical injection locking | |
| Sato | Optical pulse generation using fabry-Pe/spl acute/rot lasers under continuous-wave operation | |
| US9385506B2 (en) | Wavelength tunable comb source | |
| Sooudi et al. | A novel scheme for two-level stabilization of semiconductor mode-locked lasers using simultaneous optical injection and optical feedback | |
| US8420993B2 (en) | Optical signal generator and method for adjusting the same having a reflecting mirror to define another cavity different from the cavity of a single mode laser | |
| Sato et al. | Actively mode-locked strained-InGaAsP multiquantum-well lasers integrated with electroabsorption modulators and distributed Bragg reflectors | |
| Jung et al. | CW injection locking of a mode-locked semiconductor laser as a local oscillator comb for channelizing broad-band RF signals | |
| Kitayama | Highly stabilized millimeter-wave generation by using fiber-optic frequency-tunable comb generator | |
| Vallet et al. | Self-stabilized optoelectronic oscillator using frequency-shifted feedback and a delay line | |
| Barry et al. | Optical pulse generation at frequencies up to 20 GHz using external-injection seeding of a gain-switched commercial Fabry-Perot laser | |
| Solgaard et al. | Millimeter wave, multigigahertz optical modulation by feedforward phase noise compensation of a beat note generated by photomixing of two laser diodes | |
| Nirmalathas et al. | Subharmonic synchronous mode-locking of a monolithic semiconductor laser operating at millimeter-wave frequencies | |
| Barry et al. | Effect of side-mode suppression ratio on the performance of self-seeded gain-switched optical pulses in lightwave communications systems | |
| Yang et al. | Optical clock recovery at line rates via injection locking of a long cavity Fabry-Pe/spl acute/rot laser diode | |
| Chi et al. | A self-started laser diode pulsation based synthesizer-free optical return-to-zero on–off-keying data generator | |
| Wessel et al. | Supermode stabilized coupled-cavity 5-and 10-GHz mode-locked Ti: Er: LiNbO/sub 3/waveguide lasers | |
| Arahira et al. | Generation of synchronized subterahertz optical pulse trains by repetition-frequency multiplication of a subharmonic synchronous mode-locked semiconductor laser diode using fiber dispersion | |
| Nirmalathas et al. | Subharmonic synchronous and hybrid mode-locking of a monolithic DBR laser operating at millimeter-wave frequencies | |
| Arahira | Variable-in, variable-out optical clock recovery with an optically injection-locked and regeneratively actively mode-locked laser diode | |
| Yan et al. | Self-sustained optical frequency comb generation using a phase-modulator-based dual-loop optoelectronic oscillator | |
| Leem et al. | The characterization of all-optical 3R regeneration based on InP-related semiconductor optical devices | |
| Bao et al. | Impact of saturable absorption on performance of optical clock recovery using a mode-locked multisection semiconductor laser | |
| Liu et al. | 50-GHz Gain Switching and Period Doubling Using an Optical Injection Locked Cavity-enhanced DFB Laser | |
| Hu et al. | Extinction ratio improvement by strong external light injection and SPM in an SOA for OTDM pulse source using a DBR laser diode | |
| Slavík et al. | QAM synthesis by direct modulation of semiconductor lasers under injection locking |