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Hoenk et al., 1992 - Google Patents

Growth of a delta‐doped silicon layer by molecular beam epitaxy on a charge‐coupled device for reflection‐limited ultraviolet quantum efficiency

Hoenk et al., 1992

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Document ID
3730770418598302703
Author
Hoenk M
Grunthaner P
Grunthaner F
Terhune R
Fattahi M
Tseng H
Publication year
Publication venue
Applied Physics Letters

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Snippet

We have used low‐temperature silicon molecular beam epitaxy to grow a δ‐doped silicon layer on a fully processed charge‐coupled device (CCD). The measured quantum efficiency of the δ‐doped backside‐thinned EG&G Reticon CCD is in agreement with the reflection …
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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