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Koyama et al., 2012 - Google Patents

Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs

Koyama et al., 2012

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Document ID
3815373940655043196
Author
Koyama M
Cassé M
Coquand R
Barraud S
Iwai H
Ghibaudo G
Reimbold G
Publication year
Publication venue
2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC)

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We report an experimental study of the carrier transport in long channel tri-gate (TG) and omega-gate (ΩG) Si nanowire (NW) transistors with cross-section width down to 10 nm. Electron and hole mobility have been measured down to 20 K. We discuss the influence of …
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