Hadfield et al., 2007 - Google Patents
Single-photon source characterization with twin infrared-sensitive superconducting single-photon detectorsHadfield et al., 2007
View HTML- Document ID
- 3832295670050179056
- Author
- Hadfield R
- Stevens M
- Mirin R
- Nam S
- Publication year
- Publication venue
- Journal of Applied Physics
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Snippet
We report on the high fidelity characterization, via spontaneous emission lifetime and g (2)(τ) measurements, of a cavity-coupled quantum dot single-photon source at 902 nm using a pair of nanowire-based superconducting single-photon detectors (SSPDs). We analyze the …
- 238000010192 crystallographic characterization 0 title abstract description 13
Classifications
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
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