ATE154726T1 - Integrierte cmos-schaltung - Google Patents

Integrierte cmos-schaltung

Info

Publication number: ATE154726T1
Authority: AT; Austria
Prior art keywords: noise; switching; elements; capacitance; routing channels
Prior art date: 1992-02-27

Application number

AT93200478T

Other languages

English (en)

Inventor

Eino Jacobs

Original Assignee

Philips Electronics Nv

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1992-02-27

Filing date

1993-02-19

Publication date

1997-07-15

1993-02-19 Application filed by Philips Electronics Nv filed Critical Philips Electronics Nv

1997-07-15 Application granted granted Critical

1997-07-15 Publication of ATE154726T1 publication Critical patent/ATE154726T1/de

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/211—Design considerations for internal polarisation
- H10D89/213—Design considerations for internal polarisation in field-effect devices
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/90—Masterslice integrated circuits
- H10D84/903—Masterslice integrated circuits comprising field effect technology
- H10D84/907—CMOS gate arrays

Landscapes

Design And Manufacture Of Integrated Circuits (AREA)
Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Semiconductor Integrated Circuits (AREA)
Tone Control, Compression And Expansion, Limiting Amplitude (AREA)

AT93200478T 1992-02-27 1993-02-19 Integrierte cmos-schaltung ATE154726T1 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
EP92200565		1992-02-27

Publications (1)

Publication Number	Publication Date
ATE154726T1 true ATE154726T1 (de)	1997-07-15

Family

ID=8210450

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AT93200478T ATE154726T1 (de)	1992-02-27	1993-02-19	Integrierte cmos-schaltung

Country Status (8)

Country	Link
US (1)	US5444288A (de)
EP (1)	EP0558133B1 (de)
JP (1)	JPH06132481A (de)
KR (1)	KR930018718A (de)
CN (1)	CN1033116C (de)
AT (1)	ATE154726T1 (de)
CA (1)	CA2090265A1 (de)
DE (1)	DE69311596T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5656834A (en) *	1994-09-19	1997-08-12	Philips Electronics North America Corporation	IC standard cell designed with embedded capacitors
US5887004A (en) *	1997-03-28	1999-03-23	International Business Machines Corporation	Isolated scan paths
US7587044B2 (en)	1998-01-02	2009-09-08	Cryptography Research, Inc.	Differential power analysis method and apparatus
CA2316227C (en)	1998-01-02	2009-08-11	Cryptography Research, Inc.	Leak-resistant cryptographic method and apparatus
JP2002519722A (ja)	1998-06-03	2002-07-02	クリプターグラフィーリサーチインコーポレイテッド	スマートカードおよび他の暗号システム用の、漏洩を最小に抑える、改良ｄｅｓおよび他の暗号プロセス
ATE360866T1 (de)	1998-07-02	2007-05-15	Cryptography Res Inc	Leckresistente aktualisierung eines indexierten kryptographischen schlüssels
EP1104938A1 (de) *	1999-12-03	2001-06-06	EM Microelectronic-Marin SA	Integrierter Niederleistungsschaltkreis mit Entkopplungskapazitäten
KR100351452B1 (ko) *	1999-12-30	2002-09-09	주식회사 하이닉스반도체	디커플링 커패시터 구조를 갖는 반도체소자
JP2002083873A (ja) *	2000-07-14	2002-03-22	Internatl Business Mach Corp <Ibm>	埋め込みデカップリング・キャパシタを有する半導体デバイス
JP3526450B2 (ja) *	2001-10-29	2004-05-17	株式会社東芝	半導体集積回路およびスタンダードセル配置設計方法
JP4205662B2 (ja) *	2004-12-28	2009-01-07	パナソニック株式会社	半導体集積回路の設計方法
US20080043406A1 (en) *	2006-08-16	2008-02-21	Secure Computing Corporation	Portable computer security device that includes a clip
US10733352B2 (en) *	2017-11-21	2020-08-04	Taiwan Semiconductor Manufacturing Co., Ltd.	Integrated circuit and layout method for standard cell structures
CN116110882B (zh) *	2023-04-13	2023-09-15	长鑫存储技术有限公司	半导体结构

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS54157092A (en) *	1978-05-31	1979-12-11	Nec Corp	Semiconductor integrated circuit device
JPS56103448A (en) *	1980-01-21	1981-08-18	Hitachi Ltd	Semiconductor ic device
CA1204511A (en) *	1983-01-28	1986-05-13	Storage Technology Partners	Cmos integrated circuit with high frequency power bus arrangement
JPS6030170A (ja) *	1983-07-29	1985-02-15	Hitachi Ltd	高集積読み出し専用メモリ
US4833521A (en) *	1983-12-13	1989-05-23	Fairchild Camera & Instrument Corp.	Means for reducing signal propagation losses in very large scale integrated circuits
JPS60233838A (ja) *	1984-05-02	1985-11-20	Toshiba Corp	半導体集積回路装置
JPH079977B2 (ja) *	1987-02-10	1995-02-01	株式会社東芝	半導体集積回路装置
JPH02210849A (ja) *	1989-02-09	1990-08-22	Matsushita Electron Corp	半導体装置

1993
- 1993-02-19 AT AT93200478T patent/ATE154726T1/de not_active IP Right Cessation
- 1993-02-19 DE DE69311596T patent/DE69311596T2/de not_active Expired - Fee Related
- 1993-02-19 EP EP93200478A patent/EP0558133B1/de not_active Expired - Lifetime
- 1993-02-24 CA CA002090265A patent/CA2090265A1/en not_active Abandoned
- 1993-02-24 CN CN93101887A patent/CN1033116C/zh not_active Expired - Fee Related
- 1993-02-24 KR KR1019930002567A patent/KR930018718A/ko not_active Ceased
- 1993-02-25 JP JP5063517A patent/JPH06132481A/ja not_active Withdrawn
1994
- 1994-07-01 US US08/270,091 patent/US5444288A/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
CN1076549A (zh)	1993-09-22
US5444288A (en)	1995-08-22
CN1033116C (zh)	1996-10-23
JPH06132481A (ja)	1994-05-13
DE69311596T2 (de)	1998-01-02
DE69311596D1 (de)	1997-07-24
EP0558133B1 (de)	1997-06-18
KR930018718A (ko)	1993-09-22
EP0558133A1 (de)	1993-09-01
CA2090265A1 (en)	1993-08-28

Publication	Publication Date	Title
DE69311596D1 (de)	1997-07-24	Integrierte CMOS-Schaltung
ATE536656T1 (de)	2011-12-15	Kompakte stromversorgung
KR930020852A (ko)	1993-10-20	반도체 집적 회로 장치
EP0459771A3 (en)	1992-02-05	Electrode for semiconductor device and method for producing the same
KR970012716A (ko)	1997-03-29	유전체 분리방식 파워 아이씨(ic)
ATE164702T1 (de)	1998-04-15	Integrierte halbleiterschaltung mit einem schutzmittel
KR920005297A (ko)	1992-03-28	반도체집적회로 장치
KR19980033872A (ko)	1998-08-05	정전기 보호 소자
KR940006258A (ko)	1994-03-23	반도체장치 및 고체촬상장치의 수평레지스터
KR100238499B1 (ko)	2000-01-15	시모스(cmos) 버퍼회로
US5905399A (en)	1999-05-18	CMOS integrated circuit regulator for reducing power supply noise
KR100226508B1 (ko)	1999-10-15	풀업 또는 풀다운 저항을 갖는 반도체 장치
ATE139069T1 (de)	1996-06-15	Stromsenke
TWI566517B (zh)	2017-01-11	晶體振盪電路、此晶體振盪電路的增益級及其設計方法
KR920007194A (ko)	1992-04-28	표준 셀 방식의 반도체 집접회로
KR19980070437A (ko)	1998-10-26	신규한 레이아웃 패턴을 가지는 반도체 기억장치
DE59209755D1 (de)	1999-11-11	Integrierte schaltung
US3993043A (en)	1976-11-23	Portable sleep inducer
KR19990044720A (ko)	1999-06-25	반도체 집적 회로 장치
ATE532265T1 (de)	2011-11-15	Schaltungen mit verbesserter stromversorgungszurückweisung
KR950010049A (ko)	1995-04-26	전원노이즈감소를 위한 전원라인구조를 가지는 반도체칩
KR930003455B1 (ko)	1993-04-29	게이트어레이 반도체집적회로장치
KR880013170A (ko)	1988-11-30	반도체 기억장치
KR100741925B1 (ko)	2007-07-23	구동 용량의 미세 조절이 가능한 입출력 셀
KR930011244A (ko)	1993-06-24	반도체 집적 회로장치

Legal Events

Date	Code	Title	Description
1997-12-15	UEP	Publication of translation of european patent specification
2000-11-15	REN	Ceased due to non-payment of the annual fee