ATE543186T1 - Anti-schmelzverbindungs-speicherbaustein - Google Patents
Anti-schmelzverbindungs-speicherbausteinInfo
- Publication number
- ATE543186T1 ATE543186T1 AT06728122T AT06728122T ATE543186T1 AT E543186 T1 ATE543186 T1 AT E543186T1 AT 06728122 T AT06728122 T AT 06728122T AT 06728122 T AT06728122 T AT 06728122T AT E543186 T1 ATE543186 T1 AT E543186T1
- Authority
- AT
- Austria
- Prior art keywords
- layers
- cell
- exothermic
- materials
- fuzzle
- Prior art date
Links
- 238000006243 chemical reaction Methods 0.000 abstract 3
- 230000015556 catabolic process Effects 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 230000007704 transition Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
- H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
- H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP05104378 | 2005-05-24 | ||
| PCT/IB2006/051406 WO2006126110A1 (en) | 2005-05-24 | 2006-05-04 | Anti-fuse memory device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE543186T1 true ATE543186T1 (de) | 2012-02-15 |
Family
ID=36808848
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT06728122T ATE543186T1 (de) | 2005-05-24 | 2006-05-04 | Anti-schmelzverbindungs-speicherbaustein |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7923813B2 (de) |
| EP (1) | EP1889262B1 (de) |
| JP (1) | JP2008543040A (de) |
| KR (1) | KR20080012989A (de) |
| CN (1) | CN101180684B (de) |
| AT (1) | ATE543186T1 (de) |
| TW (1) | TW200713290A (de) |
| WO (1) | WO2006126110A1 (de) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9078294B2 (en) * | 2006-08-07 | 2015-07-07 | University Of Massachusetts | Nanoheater elements, systems and methods of use thereof |
| WO2008075315A2 (en) * | 2006-12-20 | 2008-06-26 | Nxp B.V. | Brazed flip-chip mounting of integrated circuits |
| JP5291905B2 (ja) * | 2007-08-24 | 2013-09-18 | 株式会社半導体エネルギー研究所 | 記憶装置 |
| KR100979348B1 (ko) * | 2008-03-13 | 2010-08-31 | 주식회사 하이닉스반도체 | 반도체 소자의 퓨즈 및 그 제조 방법 |
| WO2010090002A1 (ja) | 2009-02-04 | 2010-08-12 | パナソニック株式会社 | 不揮発性記憶素子 |
| US8467215B2 (en) * | 2010-01-29 | 2013-06-18 | Brigham Young University | Permanent solid state memory |
| KR101128896B1 (ko) * | 2010-09-14 | 2012-03-27 | 주식회사 하이닉스반도체 | 반도체 소자의 안티퓨즈 및 그 제조 방법 |
| US9842802B2 (en) | 2012-06-29 | 2017-12-12 | Qualcomm Incorporated | Integrated circuit device featuring an antifuse and method of making same |
| US9502424B2 (en) * | 2012-06-29 | 2016-11-22 | Qualcomm Incorporated | Integrated circuit device featuring an antifuse and method of making same |
| US9224945B2 (en) * | 2012-08-30 | 2015-12-29 | Micron Technology, Inc. | Resistive memory devices |
| CN106030793B (zh) * | 2014-03-24 | 2018-10-26 | 英特尔公司 | 使用间隔体击穿的反熔丝元件 |
| US9431354B2 (en) * | 2014-11-06 | 2016-08-30 | International Business Machines Corporation | Activating reactions in integrated circuits through electrical discharge |
| US11282960B2 (en) * | 2020-08-04 | 2022-03-22 | Nanya Technology Corporation | Semiconductor device with programmable element and method for fabricating the same |
| US11189357B1 (en) * | 2020-08-10 | 2021-11-30 | Nanya Technology Corporation | Programmable memory device |
| CN117334665A (zh) * | 2022-06-24 | 2024-01-02 | 长鑫存储技术有限公司 | 半导体结构及其制造方法、存储器及其操作方法 |
| EP4318476A4 (de) | 2022-06-24 | 2024-02-07 | Changxin Memory Technologies, Inc. | Halbleiterstruktur und herstellungsverfahren dafür, speicher und betriebsverfahren dafür |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3959799A (en) * | 1974-09-09 | 1976-05-25 | International Business Machines Corporation | Information storage by laser beam initiated reactions |
| US5296716A (en) * | 1991-01-18 | 1994-03-22 | Energy Conversion Devices, Inc. | Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
| US5290734A (en) | 1991-06-04 | 1994-03-01 | Vlsi Technology, Inc. | Method for making anti-fuse structures |
| US5120679A (en) | 1991-06-04 | 1992-06-09 | Vlsi Technology, Inc. | Anti-fuse structures and methods for making same |
| WO1993005514A1 (en) | 1991-09-04 | 1993-03-18 | Vlsi Technology, Inc. | Anti-fuse structures and methods for making same |
| US5298784A (en) * | 1992-03-27 | 1994-03-29 | International Business Machines Corporation | Electrically programmable antifuse using metal penetration of a junction |
| US5284788A (en) * | 1992-09-25 | 1994-02-08 | Texas Instruments Incorporated | Method and device for controlling current in a circuit |
| US5308795A (en) * | 1992-11-04 | 1994-05-03 | Actel Corporation | Above via metal-to-metal antifuse |
| US5387311A (en) | 1993-02-16 | 1995-02-07 | Vlsi Technology, Inc. | Method for manufacturing anti-fuse structures |
| US5463244A (en) * | 1994-05-26 | 1995-10-31 | Symetrix Corporation | Antifuse programmable element using ferroelectric material |
| US6090701A (en) * | 1994-06-21 | 2000-07-18 | Kabushiki Kaisha Toshiba | Method for production of semiconductor device |
| US5493146A (en) | 1994-07-14 | 1996-02-20 | Vlsi Technology, Inc. | Anti-fuse structure for reducing contamination of the anti-fuse material |
| JPH08139197A (ja) * | 1994-11-11 | 1996-05-31 | Tadahiro Omi | シリサイド反応を利用した半導体装置 |
| US5495436A (en) | 1995-01-13 | 1996-02-27 | Vlsi Technology, Inc. | Anti-fuse ROM programming circuit |
| US5741720A (en) * | 1995-10-04 | 1998-04-21 | Actel Corporation | Method of programming an improved metal-to-metal via-type antifuse |
| US5789795A (en) | 1995-12-28 | 1998-08-04 | Vlsi Technology, Inc. | Methods and apparatus for fabricationg anti-fuse devices |
| US5793094A (en) | 1995-12-28 | 1998-08-11 | Vlsi Technology, Inc. | Methods for fabricating anti-fuse structures |
| US6147395A (en) * | 1996-10-02 | 2000-11-14 | Micron Technology, Inc. | Method for fabricating a small area of contact between electrodes |
| US6553911B1 (en) * | 1997-04-30 | 2003-04-29 | Erico International Corporation | Exothermic reactions and methods |
| US6016001A (en) | 1997-06-18 | 2000-01-18 | Vlsi Technology, Inc. | Metal to amorphous silicon to metal anti-fuse structure |
| WO1999020472A1 (fr) * | 1997-10-17 | 1999-04-29 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Dispositif a memoire |
| US6156588A (en) | 1998-06-23 | 2000-12-05 | Vlsi Technology, Inc. | Method of forming anti-fuse structure |
| US6737686B2 (en) | 2002-06-13 | 2004-05-18 | Hewlett-Packard Development Company, L.P. | Non-volatile programmable memory device |
| US6873541B2 (en) | 2003-06-09 | 2005-03-29 | Macronix International Co., Ltd. | Nonvolatile memory programmble by a heat induced chemical reaction |
-
2006
- 2006-05-04 WO PCT/IB2006/051406 patent/WO2006126110A1/en active Application Filing
- 2006-05-04 JP JP2008512960A patent/JP2008543040A/ja not_active Withdrawn
- 2006-05-04 EP EP06728122A patent/EP1889262B1/de not_active Not-in-force
- 2006-05-04 US US11/914,662 patent/US7923813B2/en not_active Expired - Fee Related
- 2006-05-04 CN CN2006800180027A patent/CN101180684B/zh not_active Expired - Fee Related
- 2006-05-04 AT AT06728122T patent/ATE543186T1/de active
- 2006-05-04 KR KR1020077029981A patent/KR20080012989A/ko not_active Withdrawn
- 2006-05-19 TW TW095118004A patent/TW200713290A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| EP1889262B1 (de) | 2012-01-25 |
| US20090072212A1 (en) | 2009-03-19 |
| EP1889262A1 (de) | 2008-02-20 |
| CN101180684B (zh) | 2011-03-30 |
| US7923813B2 (en) | 2011-04-12 |
| JP2008543040A (ja) | 2008-11-27 |
| CN101180684A (zh) | 2008-05-14 |
| TW200713290A (en) | 2007-04-01 |
| KR20080012989A (ko) | 2008-02-12 |
| WO2006126110A1 (en) | 2006-11-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ATE543186T1 (de) | Anti-schmelzverbindungs-speicherbaustein | |
| TW200735331A (en) | Electrically rewritable non-volatile memory element and method of manufacturing the same | |
| TW200733352A (en) | Phase change memory device and method of forming the same | |
| DE602006018643D1 (de) | Elektrisch programmierbare schmelzverbindung | |
| TW200715546A (en) | Workpiece including electronic components and conductive members | |
| ATE358876T1 (de) | Multi-level speicherzelle | |
| ATE547814T1 (de) | Phasenänderungsstromdichte-steuerstruktur | |
| DE602005026160D1 (de) | Dielektrische antifuse für eine elektrothermisch programmierbare vorrichtung | |
| ATE453311T1 (de) | Leiterplatte mit zusätzlichen funktionalen elementen sowie herstellverfahren und anwendung | |
| JP2008542840A5 (de) | ||
| TW200701222A (en) | Thin film fuse phase change ram and manufacturing method | |
| ATE554631T1 (de) | Elektrische heizvorrichtung und wärmeerzeugendes element einer elektrischen heizvorrichtung | |
| DE60321255D1 (de) | Wärmeleitende Schicht | |
| NO20042302L (no) | Elektrisk varmeledning eller elektrisk varmeband | |
| TW200737498A (en) | Method of manufacturing non-volatile memory element | |
| ATE329356T1 (de) | Niedrigspannungsenergiekabel mit isolierschicht aus polyolefin mit polaren gruppen | |
| DE602004007544D1 (de) | Phasenänderungs-speicherelement mit verbesserter zyklierbarkeit | |
| CN201355596Y (zh) | 节能型大电流低功耗ntc器件 | |
| ATE543240T1 (de) | Kühlelement | |
| US20130319997A1 (en) | Keep-warming device with time control function | |
| KR101428035B1 (ko) | 면상 발열체 | |
| ATE307393T1 (de) | Mehrfach elektrisch verbindende schicht | |
| CN106992244B (zh) | 热电转换装置以及热电转换器 | |
| TW200744205A (en) | Phase change memory and method of fabricating thereof | |
| JP3132751U (ja) | 突入電流制限用サーミスタ |