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AU3519395A - Three-colour sensor - Google Patents

Three-colour sensor

Info

Publication number
AU3519395A
AU3519395A AU35193/95A AU3519395A AU3519395A AU 3519395 A AU3519395 A AU 3519395A AU 35193/95 A AU35193/95 A AU 35193/95A AU 3519395 A AU3519395 A AU 3519395A AU 3519395 A AU3519395 A AU 3519395A
Authority
AU
Australia
Prior art keywords
light
incidence direction
light incidence
partial layer
partial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU35193/95A
Inventor
Markus Bohm
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of AU3519395A publication Critical patent/AU3519395A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/041—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass H10F
    • H01L25/043—Stacked arrangements of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H10F30/2235—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier the devices comprising Group IV amorphous materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Escalators And Moving Walkways (AREA)
  • Gyroscopes (AREA)
  • Luminescent Compositions (AREA)
  • Color Image Communication Systems (AREA)
  • Color Television Image Signal Generators (AREA)

Abstract

A photosensitive electronic component based on amorphous silicon and its alloys consists of two anti-serially interconnected p-i-n or n-i-p structures or Schottky contact structures. The active layers are normal to the light propagation direction. The charge carriers generated by blue light are sensed in the area of the first structure in the light incidence direction and generate a first voltage (V1) and the charge carriers generated by green or red light are sensed in the area of the second structure in the light incidence direction and generate a second (V2) and third (V3) voltage. At least one of the two intrinsically conductive layers consists of two partial layers. In order to achieve an improved spectral selectivity, the product of charge carrier mobility and lifetime ( mu -tau product) is higher in the first partial layer (I) and lower in the second partial layer (II) in the light incidence direction, so that both partial layers (I, II) have different charge carrier sensing lengths in the presence of an electric field. The first partial layer (I) in the light incidence direction thus absorbs more green light and the second partial layer (II) in the light incidence direction absorbs more red light.
AU35193/95A 1994-10-30 1995-08-31 Three-colour sensor Abandoned AU3519395A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE4441444 1994-10-30
DE4441444 1994-10-30
PCT/EP1995/003421 WO1996013865A1 (en) 1994-10-30 1995-08-31 Three-colour sensor

Publications (1)

Publication Number Publication Date
AU3519395A true AU3519395A (en) 1996-05-23

Family

ID=6533797

Family Applications (1)

Application Number Title Priority Date Filing Date
AU35193/95A Abandoned AU3519395A (en) 1994-10-30 1995-08-31 Three-colour sensor

Country Status (10)

Country Link
EP (1) EP0788661B1 (en)
JP (1) JP3236624B2 (en)
AT (1) ATE181458T1 (en)
AU (1) AU3519395A (en)
CA (1) CA2204124C (en)
DE (1) DE59506249D1 (en)
DK (1) DK0788661T3 (en)
ES (1) ES2132711T3 (en)
GR (1) GR3031207T3 (en)
WO (1) WO1996013865A1 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996031865A1 (en) * 1995-04-07 1996-10-10 Fujitsu General Limited Method of driving display device and its circuit
DE19637126C2 (en) * 1995-09-12 1999-07-22 Markus Prof Dr Ing Boehm Variospectral multicolor diode
DE19613820A1 (en) * 1996-04-09 1997-10-23 Forschungszentrum Juelich Gmbh Structure with a pin or nip layer sequence
DE19633175C2 (en) * 1996-08-17 2003-04-10 Forschungszentrum Juelich Gmbh Self-polishing of ABO¶3¶ perovskites
WO1998019455A1 (en) * 1996-10-31 1998-05-07 Boehm Markus Colour image sensor for short-time exposure
WO1998022982A1 (en) * 1996-11-18 1998-05-28 Boehm Markus Colour image charge-coupled sensor
DE19714054A1 (en) * 1997-04-05 1998-10-08 Daimler Benz Ag Silicon-germanium photodetector
WO1998047181A1 (en) * 1997-04-14 1998-10-22 Boehm Markus Electromagnetic radiation sensor with high local contrast
DE19723177A1 (en) * 1997-06-03 1998-12-10 Daimler Benz Ag Voltage controlled wavelength selective photodetector
DE19737561C1 (en) * 1997-08-28 1999-04-15 Forschungszentrum Juelich Gmbh Multi-color sensor
KR20030029124A (en) * 2000-08-04 2003-04-11 포베온, 인크. All-eletronic high-resolution digital still camera
DE10048447B4 (en) * 2000-09-29 2006-05-18 Premosys Gmbh Method and device for testing self-luminous optoelectronic components
US7541627B2 (en) 2004-03-08 2009-06-02 Foveon, Inc. Method and apparatus for improving sensitivity in vertical color CMOS image sensors
DE102004018549B4 (en) * 2004-04-14 2008-08-21 Forschungszentrum Jülich GmbH Photodetector with voltage-dependent spectral sensitivity

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5311047A (en) * 1988-11-16 1994-05-10 National Science Council Amorphous SI/SIC heterojunction color-sensitive phototransistor

Also Published As

Publication number Publication date
WO1996013865A1 (en) 1996-05-09
JP3236624B2 (en) 2001-12-10
DK0788661T3 (en) 1999-11-22
DE59506249D1 (en) 1999-07-22
CA2204124C (en) 2002-12-17
EP0788661A1 (en) 1997-08-13
ATE181458T1 (en) 1999-07-15
GR3031207T3 (en) 1999-12-31
EP0788661B1 (en) 1999-06-16
CA2204124A1 (en) 1996-05-09
JPH10507877A (en) 1998-07-28
ES2132711T3 (en) 1999-08-16

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