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AU4141697A - Method for anisotropic etching of structures in conducting materials - Google Patents

Method for anisotropic etching of structures in conducting materials

Info

Publication number
AU4141697A
AU4141697A AU41416/97A AU4141697A AU4141697A AU 4141697 A AU4141697 A AU 4141697A AU 41416/97 A AU41416/97 A AU 41416/97A AU 4141697 A AU4141697 A AU 4141697A AU 4141697 A AU4141697 A AU 4141697A
Authority
AU
Australia
Prior art keywords
etchant
etched
substance
etching
structures
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU41416/97A
Inventor
Babak Heidari
Lennart Olsson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Obducat AB
Original Assignee
Obducat AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from SE9603260A external-priority patent/SE508155C2/en
Application filed by Obducat AB filed Critical Obducat AB
Publication of AU4141697A publication Critical patent/AU4141697A/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/07—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process being removed electrolytically

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Manufacturing Of Electrical Connectors (AREA)
  • Magnetic Heads (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

In a method for anisotropic etching of a structure in an electrically conductive substance to be etched, use is made of an etchant which in concentrated solution is usable for isotopic etching of structures in the substance to be etched. The substance to be etched is contacted with the etchant in a solution which is so diluted that the etchant is unusable for isotropic etching. The etchant is subjected, adjacent to the substance to be etched, to an electric field of such a strength that anisotropic etching of the substance to be etched is accomplished. Moreover, an etching fluid is described, comprising an etchant in dilute solution, in which the etchant is present in a concentration of 200 mM at most, and use of such an etching fluid for making structures which are 50 mum or less is also described.
AU41416/97A 1996-09-06 1997-09-05 Method for anisotropic etching of structures in conducting materials Abandoned AU4141697A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US2513896P 1996-09-06 1996-09-06
US60025138 1996-09-06
SE9603260 1996-09-06
SE9603260A SE508155C2 (en) 1996-09-06 1996-09-06 Anisotropic etching of a conductive layer, especially at small dimensions
PCT/SE1997/001480 WO1998010121A1 (en) 1996-09-06 1997-09-05 Method for anisotropic etching of structures in conducting materials

Publications (1)

Publication Number Publication Date
AU4141697A true AU4141697A (en) 1998-03-26

Family

ID=26662742

Family Applications (1)

Application Number Title Priority Date Filing Date
AU41416/97A Abandoned AU4141697A (en) 1996-09-06 1997-09-05 Method for anisotropic etching of structures in conducting materials

Country Status (8)

Country Link
US (2) US6245213B1 (en)
EP (1) EP0938597B1 (en)
JP (1) JP2002513445A (en)
AT (1) ATE247724T1 (en)
AU (1) AU4141697A (en)
CA (1) CA2264908C (en)
DE (2) DE938597T1 (en)
WO (1) WO1998010121A1 (en)

Families Citing this family (117)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE511682C2 (en) 1998-03-05 1999-11-08 Etchtech Sweden Ab Resistance in electrical conductors on or in circuit boards, substrates and semiconductor trays
WO1999045179A1 (en) 1998-03-05 1999-09-10 Obducat Ab Method of etching
DE19914905A1 (en) * 1999-04-01 2000-10-05 Bosch Gmbh Robert Electrochemical etching cell for etching silicon wafers uses electrode materials that do not contaminate and/or damage the etching body after etching
US6873087B1 (en) 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
CN100504598C (en) 2000-07-16 2009-06-24 得克萨斯州大学系统董事会 High resolution overlay alignment method and system for use in lithographic processes
CN1262883C (en) 2000-07-17 2006-07-05 得克萨斯州大学系统董事会 Method and system of automatic fluid dispensing for imprint lithography processes
KR20030040378A (en) 2000-08-01 2003-05-22 보드 오브 리전츠, 더 유니버시티 오브 텍사스 시스템 Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography
EP1390975A2 (en) * 2000-08-21 2004-02-25 The Board Of Regents, The University Of Texas System Flexure based translation stage
EP2306242A3 (en) 2000-10-12 2011-11-02 Board of Regents, The University of Texas System Method of forming a pattern on a substrate
US6964793B2 (en) 2002-05-16 2005-11-15 Board Of Regents, The University Of Texas System Method for fabricating nanoscale patterns in light curable compositions using an electric field
SE519898C2 (en) * 2001-09-10 2003-04-22 Obducat Ab Ways to etch copper on card and device and electrolyte for carrying out the method
US6851175B2 (en) * 2001-09-12 2005-02-08 Delphi Technologies, Inc. Wound stator core and method of making
US7037639B2 (en) * 2002-05-01 2006-05-02 Molecular Imprints, Inc. Methods of manufacturing a lithography template
US6932934B2 (en) 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US7077992B2 (en) 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US7070405B2 (en) 2002-08-01 2006-07-04 Molecular Imprints, Inc. Alignment systems for imprint lithography
US6916584B2 (en) 2002-08-01 2005-07-12 Molecular Imprints, Inc. Alignment methods for imprint lithography
US7027156B2 (en) 2002-08-01 2006-04-11 Molecular Imprints, Inc. Scatterometry alignment for imprint lithography
US7071088B2 (en) 2002-08-23 2006-07-04 Molecular Imprints, Inc. Method for fabricating bulbous-shaped vias
US8349241B2 (en) 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US6929762B2 (en) 2002-11-13 2005-08-16 Molecular Imprints, Inc. Method of reducing pattern distortions during imprint lithography processes
US6871558B2 (en) 2002-12-12 2005-03-29 Molecular Imprints, Inc. Method for determining characteristics of substrate employing fluid geometries
US7452574B2 (en) 2003-02-27 2008-11-18 Molecular Imprints, Inc. Method to reduce adhesion between a polymerizable layer and a substrate employing a fluorine-containing layer
US7122079B2 (en) 2004-02-27 2006-10-17 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US7157036B2 (en) 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
KR100468865B1 (en) * 2003-06-18 2005-01-29 삼성전자주식회사 Selective electrochemical etching method for two dimensional dopant profiling
US7136150B2 (en) 2003-09-25 2006-11-14 Molecular Imprints, Inc. Imprint lithography template having opaque alignment marks
US20050106321A1 (en) * 2003-11-14 2005-05-19 Molecular Imprints, Inc. Dispense geometery to achieve high-speed filling and throughput
US20050145506A1 (en) * 2003-12-29 2005-07-07 Taylor E. J. Electrochemical etching of circuitry for high density interconnect electronic modules
US20060207888A1 (en) * 2003-12-29 2006-09-21 Taylor E J Electrochemical etching of circuitry for high density interconnect electronic modules
US7906180B2 (en) 2004-02-27 2011-03-15 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
SI2253614T1 (en) 2004-04-07 2013-01-31 Novartis Ag Inhibitors of IAP
WO2006060757A2 (en) * 2004-12-01 2006-06-08 Molecular Imprints, Inc. Eliminating printability of sub-resolution defects in imprint lithography
US7569490B2 (en) * 2005-03-15 2009-08-04 Wd Media, Inc. Electrochemical etching
US20060207890A1 (en) * 2005-03-15 2006-09-21 Norbert Staud Electrochemical etching
GB0510390D0 (en) 2005-05-20 2005-06-29 Novartis Ag Organic compounds
AR058065A1 (en) 2005-09-27 2008-01-23 Novartis Ag CARBOXYAMINE COMPOUNDS AND USE OF THE SAME PHARMACEUTICAL COMPOSITIONS.
US7906058B2 (en) * 2005-12-01 2011-03-15 Molecular Imprints, Inc. Bifurcated contact printing technique
US7803308B2 (en) 2005-12-01 2010-09-28 Molecular Imprints, Inc. Technique for separating a mold from solidified imprinting material
JP4987012B2 (en) 2005-12-08 2012-07-25 モレキュラー・インプリンツ・インコーポレーテッド Method and system for patterning both sides of a substrate
US7670530B2 (en) 2006-01-20 2010-03-02 Molecular Imprints, Inc. Patterning substrates employing multiple chucks
GB0605120D0 (en) 2006-03-14 2006-04-26 Novartis Ag Organic Compounds
JP5306989B2 (en) * 2006-04-03 2013-10-02 モレキュラー・インプリンツ・インコーポレーテッド Method for simultaneously patterning a substrate having a plurality of fields and alignment marks
US7802978B2 (en) 2006-04-03 2010-09-28 Molecular Imprints, Inc. Imprinting of partial fields at the edge of the wafer
US8850980B2 (en) 2006-04-03 2014-10-07 Canon Nanotechnologies, Inc. Tessellated patterns in imprint lithography
US8142850B2 (en) 2006-04-03 2012-03-27 Molecular Imprints, Inc. Patterning a plurality of fields on a substrate to compensate for differing evaporation times
CN102861338A (en) 2006-04-05 2013-01-09 诺瓦提斯公司 Combinations of comprising a bcr-abl, c-kit and pdgf-r tyrosine kinase inhibitor used for treating cancer
KR20080108517A (en) 2006-04-05 2008-12-15 노파르티스 아게 Combination of Therapeutics to Treat Cancer
US7547398B2 (en) 2006-04-18 2009-06-16 Molecular Imprints, Inc. Self-aligned process for fabricating imprint templates containing variously etched features
US8012395B2 (en) 2006-04-18 2011-09-06 Molecular Imprints, Inc. Template having alignment marks formed of contrast material
BRPI0711385A2 (en) 2006-05-09 2011-11-08 Novartis Ag combination comprising an iron chelator and an antineoplastic agent and its use
MX2009003185A (en) 2006-09-29 2009-04-03 Novartis Ag Pyrazolopyrimidines as p13k lipid kinase inhibitors.
WO2008100985A2 (en) 2007-02-15 2008-08-21 Novartis Ag Combination of lbh589 with other therapeutic agents for treating cancer
PL2268612T3 (en) 2008-03-24 2015-02-27 Novartis Ag Arylsulfonamide-based matrix metalloprotease inhibitors
EP2628726A1 (en) 2008-03-26 2013-08-21 Novartis AG Hydroxamate-based inhibitors of deacetylases b
US8432548B2 (en) 2008-11-04 2013-04-30 Molecular Imprints, Inc. Alignment for edge field nano-imprinting
WO2010083617A1 (en) 2009-01-21 2010-07-29 Oncalis Ag Pyrazolopyrimidines as protein kinase inhibitors
PT2391366E (en) 2009-01-29 2013-02-05 Novartis Ag Substituted benzimidazoles for the treatment of astrocytomas
MY155570A (en) 2009-06-26 2015-10-30 Novartis Ag 1, 3-disubstituted imidazolidin-2-one derivatives as inhibitors of cyp 17
US8389526B2 (en) 2009-08-07 2013-03-05 Novartis Ag 3-heteroarylmethyl-imidazo[1,2-b]pyridazin-6-yl derivatives
EP2464649A1 (en) 2009-08-12 2012-06-20 Novartis AG Heterocyclic hydrazone compounds and their uses to treat cancer and inflammation
JP5775871B2 (en) 2009-08-20 2015-09-09 ノバルティス アーゲー Heterocyclic oxime compounds
US8492009B1 (en) 2009-08-25 2013-07-23 Wd Media, Inc. Electrochemical etching of magnetic recording layer
EP2470502A1 (en) 2009-08-26 2012-07-04 Novartis AG Tetra-substituted heteroaryl compounds and their use as mdm2 and/or mdm4 modulators
JP5466767B2 (en) 2009-11-04 2014-04-09 ノバルティス アーゲー Heterocyclic sulfonamide derivatives useful as MEK inhibitors
CA2781218A1 (en) 2009-12-08 2011-06-16 Novartis Ag Heterocyclic sulfonamide derivatives
CU24130B1 (en) 2009-12-22 2015-09-29 Novartis Ag ISOQUINOLINONES AND REPLACED QUINAZOLINONES
US8440693B2 (en) 2009-12-22 2013-05-14 Novartis Ag Substituted isoquinolinones and quinazolinones
US20110281431A1 (en) * 2010-05-14 2011-11-17 Globalfoundries Inc. Method of patterning thin metal films
WO2011146638A1 (en) 2010-05-18 2011-11-24 Cerulean Pharma Inc. Compositions and methods for treatment of autoimmune and other diseases
UA112517C2 (en) 2010-07-06 2016-09-26 Новартіс Аг TETRAHYDROPYRIDOPYRIMIDINE DERIVATIVES
JP2013537210A (en) 2010-09-16 2013-09-30 ノバルティス アーゲー 17α-hydroxylase / C17,20-lyase inhibitor
EP2673277A1 (en) 2011-02-10 2013-12-18 Novartis AG [1, 2, 4]triazolo [4, 3 -b]pyridazine compounds as inhibitors of the c-met tyrosine kinase
AU2012249421B9 (en) 2011-04-28 2015-10-22 Novartis Ag 17alpha-hydroxylase/C17,20-lyase inhibitors
EP2718276A1 (en) 2011-06-09 2014-04-16 Novartis AG Heterocyclic sulfonamide derivatives
US8859535B2 (en) 2011-06-20 2014-10-14 Novartis Ag Hydroxy substituted isoquinolinone derivatives
US8859586B2 (en) 2011-06-20 2014-10-14 Novartis Ag Cyclohexyl isoquinolinone compounds
SG195067A1 (en) 2011-06-27 2013-12-30 Novartis Ag Solid forms and salts of tetrahydro-pyrido-pyrimidine derivatives
ES2691650T3 (en) 2011-09-15 2018-11-28 Novartis Ag 3- (quinolin-6-yl-thio) - [1,2,4] -triazolo- [4,3-a] -pyridines 6-substituted as inhibitors of tyrosine kinase c-Met
JP5992054B2 (en) 2011-11-29 2016-09-14 ノバルティス アーゲー Pyrazolopyrrolidine compound
WO2013093850A1 (en) 2011-12-22 2013-06-27 Novartis Ag Quinoline derivatives
PL2794600T3 (en) 2011-12-22 2018-06-29 Novartis Ag 2,3-Dihydro-benzo[1,4]oxazine derivatives and related compounds as phosphoinositide-3 kinase (PI3K) inhibitors for the treatment of e.g. rheumatoid arthritis
CN104125953A (en) 2011-12-23 2014-10-29 诺华股份有限公司 Compounds for inhibiting interaction of bcl2 with binding partners
CN104125954A (en) 2011-12-23 2014-10-29 诺华股份有限公司 Compounds for inhibiting interaction of bcl2 with binding partners
MX2014007729A (en) 2011-12-23 2015-01-12 Novartis Ag Compounds for inhibiting the interaction of bcl2 with binding partners.
KR20140107578A (en) 2011-12-23 2014-09-04 노파르티스 아게 Compounds for inhibiting the interaction of bcl2 with binding partners
US20140357666A1 (en) 2011-12-23 2014-12-04 Novartis Ag Compounds for inhibiting the interaction of bcl2 with binding partners
UY34591A (en) 2012-01-26 2013-09-02 Novartis Ag IMIDAZOPIRROLIDINONA COMPOUNDS
ES2646777T3 (en) 2012-05-15 2017-12-15 Novartis Ag Pyrimidine, pyridine and pyrazine amide derivatives substituted with thiazole or imidazole and related compounds such as inhibitors of ABL1, ABL2 and BCR-ABL1 for the treatment of cancer, specific viral infections and specific CNS disorders
MA37519B1 (en) 2012-05-15 2017-03-31 Novartis Ag Compounds and compositions for inhibiting the activity of abl1, abl2 and bcr-abl1
KR20150020169A (en) 2012-05-15 2015-02-25 노파르티스 아게 Benzamide derivatives for inhibiting the activity of abl1, abl2 and bcr-abl1
BR112014027244A2 (en) 2012-05-15 2017-06-27 Novartis Ag benzamide derivatives for inhibition of abl1, abl2 and bcr-abl1 activity
CN104321325B (en) 2012-05-24 2016-11-16 诺华股份有限公司 Pyrrolopyrrole alkanone compound
AU2013274101B2 (en) 2012-06-15 2017-09-07 The Brigham And Women's Hospital, Inc. Compositions for treating cancer and methods for making the same
ES2654143T3 (en) 2012-10-02 2018-02-12 Gilead Sciences, Inc. Histone Demethylase Inhibitors
TW201422625A (en) 2012-11-26 2014-06-16 Novartis Ag Solid form of dihydro-pyrido-oxazine derivative
US9556180B2 (en) 2013-01-22 2017-01-31 Novartis Ag Pyrazolo[3,4-d]pyrimidinone compounds as inhibitors of the P53/MDM2 interaction
US9403827B2 (en) 2013-01-22 2016-08-02 Novartis Ag Substituted purinone compounds
WO2014128612A1 (en) 2013-02-20 2014-08-28 Novartis Ag Quinazolin-4-one derivatives
AP2015008676A0 (en) 2013-02-27 2015-08-31 Epitherapeutics Aps Inhibitors of histone demethylases
US20150018376A1 (en) 2013-05-17 2015-01-15 Novartis Ag Pyrimidin-4-yl)oxy)-1h-indole-1-carboxamide derivatives and use thereof
UY35675A (en) 2013-07-24 2015-02-27 Novartis Ag SUBSTITUTED DERIVATIVES OF QUINAZOLIN-4-ONA
US9227969B2 (en) 2013-08-14 2016-01-05 Novartis Ag Compounds and compositions as inhibitors of MEK
WO2015022663A1 (en) 2013-08-14 2015-02-19 Novartis Ag Compounds and compositions as inhibitors of mek
WO2015022664A1 (en) 2013-08-14 2015-02-19 Novartis Ag Compounds and compositions as inhibitors of mek
RU2675105C9 (en) 2013-09-22 2019-01-09 Саншайн Лейк Фарма Ко., Лтд. Substituted aminopyrimidine compounds and methods of use
US9365947B2 (en) 2013-10-04 2016-06-14 Invensas Corporation Method for preparing low cost substrates
EP3122730B1 (en) 2014-03-28 2020-03-25 Calitor Sciences, LLC Substituted heteroaryl compounds and methods of use
US20170369444A1 (en) 2014-03-31 2017-12-28 Marc Labelle Inhibitors of histone demethylases
MX2016012893A (en) 2014-04-03 2017-05-12 Invictus Oncology Pvt Ltd Supramolecular combinatorial therapeutics.
SG11201701182VA (en) 2014-08-27 2017-03-30 Gilead Sciences Inc Compounds and methods for inhibiting histone demethylases
WO2017044434A1 (en) 2015-09-11 2017-03-16 Sunshine Lake Pharma Co., Ltd. Substituted heteroaryl compounds and methods of use
JP7254076B2 (en) 2017-11-19 2023-04-07 サンシャイン・レイク・ファーマ・カンパニー・リミテッド Substituted heteroaryl compounds and methods of use
US10751339B2 (en) 2018-01-20 2020-08-25 Sunshine Lake Pharma Co., Ltd. Substituted aminopyrimidine compounds and methods of use
FR3087650B1 (en) 2018-10-31 2021-01-29 Bio Even FLAVINE ADENINE DINUCLEOTIDE (FAD) FOR USE FOR THE PREVENTION AND / OR TREATMENT OF CANCER
US11107707B2 (en) * 2018-11-26 2021-08-31 Taiwan Semiconductor Manufacturing Co., Ltd. Wet etch apparatus and method of using the same
EP4512395A1 (en) 2023-08-21 2025-02-26 Bio Even Composition comprising flavin adenine dinucleotide (fad), l-gsh, atp and myristic acid, alone or with a drug

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE344082B (en) * 1967-10-03 1972-03-27 S Ruben
GB1574910A (en) * 1976-04-07 1980-09-10 Rca Corp Fabrication of diffractive subtractive filter embossing master
US4155816A (en) * 1978-09-29 1979-05-22 The Goodyear Tire & Rubber Company Method of electroplating and treating electroplated ferrous based wire
US4279707A (en) * 1978-12-18 1981-07-21 International Business Machines Corporation Electroplating of nickel-iron alloys for uniformity of nickel/iron ratio using a low density plating current
US4353622A (en) * 1979-06-25 1982-10-12 Rca Corporation Recording blank and method for fabricating therefrom diffractive subtractive filter metal embossing master
US4629539A (en) 1982-07-08 1986-12-16 Tdk Corporation Metal layer patterning method
US4472248A (en) * 1982-12-20 1984-09-18 Minnesota Mining And Manufacturing Company Method of making thin-film magnetic recording medium having perpendicular anisotropy
US4466864A (en) * 1983-12-16 1984-08-21 At&T Technologies, Inc. Methods of and apparatus for electroplating preselected surface regions of electrical articles
JPH01162798A (en) * 1987-12-18 1989-06-27 Nkk Corp Method for removing metal sticking to conductor roll for electroplating
DE3805752A1 (en) 1988-02-24 1989-08-31 Fraunhofer Ges Forschung ANISOTROPIC ETCHING PROCESS WITH ELECTROCHEMICAL ETCH STOP
US4977038A (en) * 1989-04-14 1990-12-11 Karl Sieradzki Micro- and nano-porous metallic structures
JPH0748057B2 (en) * 1989-07-28 1995-05-24 株式会社神戸製鋼所 Shape detection roll
US5071510A (en) * 1989-09-22 1991-12-10 Robert Bosch Gmbh Process for anisotropic etching of silicon plates
US5071810A (en) * 1990-12-21 1991-12-10 Union Carbide Chemicals And Plastics Technology Corporation High activity vanadium-based catalyst
US5167776A (en) * 1991-04-16 1992-12-01 Hewlett-Packard Company Thermal inkjet printhead orifice plate and method of manufacture
DE4202454C1 (en) 1992-01-29 1993-07-29 Siemens Ag, 8000 Muenchen, De
JP2952539B2 (en) * 1992-03-30 1999-09-27 セイコーインスツルメンツ株式会社 Micro processing equipment
DE69320856T2 (en) * 1992-03-30 1999-02-04 Seiko Instruments Co. Ltd., Tokio/Tokyo Process for electrochemical finishing
MX9305898A (en) * 1992-10-30 1995-01-31 Texas Instruments Inc ANISOTROPIC PHOTOCHEMICAL ENGRAVING METHOD FOR THE MANUFACTURE OF INTEGRATED CIRCUITS.

Also Published As

Publication number Publication date
ATE247724T1 (en) 2003-09-15
EP0938597A1 (en) 1999-09-01
CA2264908A1 (en) 1998-03-12
US6245213B1 (en) 2001-06-12
CA2264908C (en) 2006-04-25
DE69724269T2 (en) 2004-06-09
WO1998010121A1 (en) 1998-03-12
DE69724269D1 (en) 2003-09-25
US20010023829A1 (en) 2001-09-27
JP2002513445A (en) 2002-05-08
EP0938597B1 (en) 2003-08-20
DE938597T1 (en) 2000-03-09

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