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CA2206217A1 - Nickel carbonyl vapour deposition process - Google Patents

Nickel carbonyl vapour deposition process

Info

Publication number
CA2206217A1
CA2206217A1 CA 2206217 CA2206217A CA2206217A1 CA 2206217 A1 CA2206217 A1 CA 2206217A1 CA 2206217 CA2206217 CA 2206217 CA 2206217 A CA2206217 A CA 2206217A CA 2206217 A1 CA2206217 A1 CA 2206217A1
Authority
CA
Canada
Prior art keywords
nickel
nickel carbonyl
carbonyl
gaseous mixture
produce
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA 2206217
Other languages
French (fr)
Other versions
CA2206217C (en
Inventor
Miroslav Milinkovic
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CVMR Corp
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to CA 2206217 priority Critical patent/CA2206217C/en
Publication of CA2206217A1 publication Critical patent/CA2206217A1/en
Application granted granted Critical
Publication of CA2206217C publication Critical patent/CA2206217C/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45593—Recirculation of reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

A closed loop, carbon monoxide self-contained continuous process for the production of nickel or nickel coated objects by the nickel vapour deposition process, comprising placing an object to be treated with nickel carbonyl by said nickel vapour deposition process in a deposition chamber; feeding a gaseous mixture of nickel carbonyl and carbon monoxide to said deposition chamber; depositing nickel on said object to produce said nickel or nickel coated object in said chamber and a nickel carbonyl-depleted gaseous mixture; removing said nickel carbonyl-depleted gaseous mixture from said chamber; removing nickel carbonyl from said nickel carbonyl-depleted gaseous mixture to produce an essentially nickel carbonyl-free gas; feeding said essentially nickel carbonyl-free gas to a nickel carbonyl reactor containing nickel powder to produce a fresh gaseous mixture comprising fresh nickel carbonyl and carbon monoxide; separating said fresh nickel carbonyl from said fresh gaseous mixture to produce a second carbonmonoxide containing gas; and recycling said second carbon monoxide containing gas to said nickel carbonyl reactor. The process and apparatus provides a more economic to operate, safe and more operably reliable than prior art NVD processes.
CA 2206217 1997-05-27 1997-05-27 Nickel carbonyl vapour deposition process Expired - Lifetime CA2206217C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CA 2206217 CA2206217C (en) 1997-05-27 1997-05-27 Nickel carbonyl vapour deposition process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA 2206217 CA2206217C (en) 1997-05-27 1997-05-27 Nickel carbonyl vapour deposition process

Publications (2)

Publication Number Publication Date
CA2206217A1 true CA2206217A1 (en) 1998-11-27
CA2206217C CA2206217C (en) 2003-01-07

Family

ID=4160745

Family Applications (1)

Application Number Title Priority Date Filing Date
CA 2206217 Expired - Lifetime CA2206217C (en) 1997-05-27 1997-05-27 Nickel carbonyl vapour deposition process

Country Status (1)

Country Link
CA (1) CA2206217C (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6048578A (en) * 1998-11-03 2000-04-11 Chemical Vapour Deposition Systems, Inc. Closed loop carbon monoxide self-contained nickel carbonyl deposition process
WO2000026432A1 (en) * 1998-11-03 2000-05-11 Chemical Vapour Deposition Systems Inc. Nickel carbonyl vapour deposition apparatus and process
US6132518A (en) * 1998-11-04 2000-10-17 Chemical Vapour Deposition Systems, Inc. Nickel carbonyl vapour deposition apparatus and method
WO2006104783A1 (en) * 2005-03-31 2006-10-05 Tokyo Electron Limited Method and system for refurbishing a metal carbonyl precursor
US7678421B2 (en) * 2004-11-23 2010-03-16 Tokyo Electron Limited Method for increasing deposition rates of metal layers from metal-carbonyl precursors
US7704879B2 (en) 2007-09-27 2010-04-27 Tokyo Electron Limited Method of forming low-resistivity recessed features in copper metallization
US7776740B2 (en) 2008-01-22 2010-08-17 Tokyo Electron Limited Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device
US7799681B2 (en) 2008-07-15 2010-09-21 Tokyo Electron Limited Method for forming a ruthenium metal cap layer
US7829454B2 (en) 2007-09-11 2010-11-09 Tokyo Electron Limited Method for integrating selective ruthenium deposition into manufacturing of a semiconductior device
US7884012B2 (en) 2007-09-28 2011-02-08 Tokyo Electron Limited Void-free copper filling of recessed features for semiconductor devices
US7892358B2 (en) 2006-03-29 2011-02-22 Tokyo Electron Limited System for introducing a precursor gas to a vapor deposition system
US7977235B2 (en) 2009-02-02 2011-07-12 Tokyo Electron Limited Method for manufacturing a semiconductor device with metal-containing cap layers
US8247030B2 (en) 2008-03-07 2012-08-21 Tokyo Electron Limited Void-free copper filling of recessed features using a smooth non-agglomerated copper seed layer
US8716132B2 (en) 2009-02-13 2014-05-06 Tokyo Electron Limited Radiation-assisted selective deposition of metal-containing cap layers

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6048578A (en) * 1998-11-03 2000-04-11 Chemical Vapour Deposition Systems, Inc. Closed loop carbon monoxide self-contained nickel carbonyl deposition process
WO2000026432A1 (en) * 1998-11-03 2000-05-11 Chemical Vapour Deposition Systems Inc. Nickel carbonyl vapour deposition apparatus and process
US6132518A (en) * 1998-11-04 2000-10-17 Chemical Vapour Deposition Systems, Inc. Nickel carbonyl vapour deposition apparatus and method
US7678421B2 (en) * 2004-11-23 2010-03-16 Tokyo Electron Limited Method for increasing deposition rates of metal layers from metal-carbonyl precursors
WO2006104783A1 (en) * 2005-03-31 2006-10-05 Tokyo Electron Limited Method and system for refurbishing a metal carbonyl precursor
US7345184B2 (en) 2005-03-31 2008-03-18 Tokyo Electron Limited Method and system for refurbishing a metal carbonyl precursor
US7892358B2 (en) 2006-03-29 2011-02-22 Tokyo Electron Limited System for introducing a precursor gas to a vapor deposition system
US7829454B2 (en) 2007-09-11 2010-11-09 Tokyo Electron Limited Method for integrating selective ruthenium deposition into manufacturing of a semiconductior device
US7704879B2 (en) 2007-09-27 2010-04-27 Tokyo Electron Limited Method of forming low-resistivity recessed features in copper metallization
US7884012B2 (en) 2007-09-28 2011-02-08 Tokyo Electron Limited Void-free copper filling of recessed features for semiconductor devices
US7776740B2 (en) 2008-01-22 2010-08-17 Tokyo Electron Limited Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device
US8247030B2 (en) 2008-03-07 2012-08-21 Tokyo Electron Limited Void-free copper filling of recessed features using a smooth non-agglomerated copper seed layer
US7799681B2 (en) 2008-07-15 2010-09-21 Tokyo Electron Limited Method for forming a ruthenium metal cap layer
US7977235B2 (en) 2009-02-02 2011-07-12 Tokyo Electron Limited Method for manufacturing a semiconductor device with metal-containing cap layers
US8716132B2 (en) 2009-02-13 2014-05-06 Tokyo Electron Limited Radiation-assisted selective deposition of metal-containing cap layers

Also Published As

Publication number Publication date
CA2206217C (en) 2003-01-07

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Effective date: 20170529