CA920285A - Extending the operating life of light emitting p-n junction devices - Google Patents
Extending the operating life of light emitting p-n junction devicesInfo
- Publication number
- CA920285A CA920285A CA121897A CA121897A CA920285A CA 920285 A CA920285 A CA 920285A CA 121897 A CA121897 A CA 121897A CA 121897 A CA121897 A CA 121897A CA 920285 A CA920285 A CA 920285A
- Authority
- CA
- Canada
- Prior art keywords
- extending
- light emitting
- operating life
- junction devices
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02241—III-V semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Led Devices (AREA)
- Formation Of Insulating Films (AREA)
- Weting (AREA)
- Electroluminescent Light Sources (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9354470A | 1970-11-30 | 1970-11-30 | |
| US14196471A | 1971-05-10 | 1971-05-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA920285A true CA920285A (en) | 1973-01-30 |
Family
ID=26787656
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA121897A Expired CA920285A (en) | 1970-11-30 | 1971-09-01 | Extending the operating life of light emitting p-n junction devices |
Country Status (13)
| Country | Link |
|---|---|
| JP (1) | JPS5131153B1 (en) |
| BE (1) | BE775868A (en) |
| CA (1) | CA920285A (en) |
| CH (1) | CH536035A (en) |
| DE (1) | DE2158681C3 (en) |
| ES (1) | ES397861A1 (en) |
| FR (1) | FR2116159A5 (en) |
| GB (1) | GB1360073A (en) |
| IE (1) | IE35848B1 (en) |
| IT (1) | IT945195B (en) |
| NL (1) | NL155131B (en) |
| PH (1) | PH11254A (en) |
| SE (1) | SE367532B (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3776789A (en) * | 1972-05-01 | 1973-12-04 | Ibm | METHOD FOR PROTECTING GaAs WAFER SURFACES |
| FR2287776A1 (en) * | 1974-10-09 | 1976-05-07 | Lignes Telegraph Telephon | METHOD OF MANUFACTURING IN SERIES OF PHOTOEMISSIVE DIODES AND DIODES SO REALIZED |
| US4843450A (en) * | 1986-06-16 | 1989-06-27 | International Business Machines Corporation | Compound semiconductor interface control |
| US5451548A (en) * | 1994-03-23 | 1995-09-19 | At&T Corp. | Electron beam deposition of gallium oxide thin films using a single high purity crystal source |
| US5550089A (en) * | 1994-03-23 | 1996-08-27 | Lucent Technologies Inc. | Gallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd3 Ga5 O12 source. |
| DE19509864C2 (en) * | 1995-03-17 | 2001-10-04 | Oce Printing Systems Gmbh | Process for aging light-emitting diodes |
| AU2001283424A1 (en) * | 2000-08-17 | 2002-02-25 | Power Signal Technologies, Inc. | Glass-to-metal hermetically led array in a sealed solid state light |
| DE10261675B4 (en) * | 2002-12-31 | 2013-08-14 | Osram Opto Semiconductors Gmbh | Optoelectronic component with radiation-permeable electrical contact layer |
| CN111725363A (en) * | 2020-05-28 | 2020-09-29 | 南京中电熊猫液晶显示科技有限公司 | A miniature light-emitting diode backplane and its manufacturing method |
-
1971
- 1971-09-01 CA CA121897A patent/CA920285A/en not_active Expired
- 1971-11-22 SE SE14904/71A patent/SE367532B/xx unknown
- 1971-11-25 IE IE1492/71A patent/IE35848B1/en unknown
- 1971-11-25 NL NL717116220A patent/NL155131B/en not_active IP Right Cessation
- 1971-11-26 BE BE775868A patent/BE775868A/en unknown
- 1971-11-26 PH PH13056A patent/PH11254A/en unknown
- 1971-11-26 DE DE2158681A patent/DE2158681C3/en not_active Expired
- 1971-11-29 IT IT54404/71A patent/IT945195B/en active
- 1971-11-29 GB GB5527371A patent/GB1360073A/en not_active Expired
- 1971-11-29 CH CH1735971A patent/CH536035A/en not_active IP Right Cessation
- 1971-11-29 FR FR7142744A patent/FR2116159A5/fr not_active Expired
- 1971-11-30 JP JP46096017A patent/JPS5131153B1/ja active Pending
- 1971-11-30 ES ES397861A patent/ES397861A1/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL7116220A (en) | 1972-06-01 |
| NL155131B (en) | 1977-11-15 |
| GB1360073A (en) | 1974-07-17 |
| IE35848L (en) | 1972-05-30 |
| IT945195B (en) | 1973-05-10 |
| SE367532B (en) | 1974-05-27 |
| JPS5131153B1 (en) | 1976-09-04 |
| CH536035A (en) | 1973-04-15 |
| DE2158681C3 (en) | 1978-12-07 |
| DE2158681A1 (en) | 1972-07-20 |
| IE35848B1 (en) | 1976-06-09 |
| BE775868A (en) | 1972-03-16 |
| ES397861A1 (en) | 1975-04-16 |
| DE2158681B2 (en) | 1975-08-14 |
| PH11254A (en) | 1977-10-28 |
| FR2116159A5 (en) | 1972-07-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |
Effective date: 19900130 |