CN104049455A - Extreme Ultraviolet Light (EUV) Photomasks, and Fabrication Methods Thereof - Google Patents
Extreme Ultraviolet Light (EUV) Photomasks, and Fabrication Methods Thereof Download PDFInfo
- Publication number
- CN104049455A CN104049455A CN201310499322.0A CN201310499322A CN104049455A CN 104049455 A CN104049455 A CN 104049455A CN 201310499322 A CN201310499322 A CN 201310499322A CN 104049455 A CN104049455 A CN 104049455A
- Authority
- CN
- China
- Prior art keywords
- reflection horizon
- overlayer
- layer
- absorber
- width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 103
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000006096 absorbing agent Substances 0.000 claims abstract description 51
- 230000008569 process Effects 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000010521 absorption reaction Methods 0.000 claims description 20
- 238000001312 dry etching Methods 0.000 claims description 12
- 239000000460 chlorine Substances 0.000 claims description 9
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical group [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 5
- 238000001459 lithography Methods 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- 229910019895 RuSi Inorganic materials 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 19
- 239000000463 material Substances 0.000 description 12
- 239000007789 gas Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052715 tantalum Inorganic materials 0.000 description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 6
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910004535 TaBN Inorganic materials 0.000 description 3
- 229910003071 TaON Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229910052582 BN Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 2
- XTDAIYZKROTZLD-UHFFFAOYSA-N boranylidynetantalum Chemical compound [Ta]#B XTDAIYZKROTZLD-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000001015 X-ray lithography Methods 0.000 description 1
- FVMWSPVGWLGGTC-UHFFFAOYSA-N [B+3].[O-2].[Ta+5].[O-2].[O-2].[O-2] Chemical compound [B+3].[O-2].[Ta+5].[O-2].[O-2].[O-2] FVMWSPVGWLGGTC-UHFFFAOYSA-N 0.000 description 1
- SLYSCVGKSGZCPI-UHFFFAOYSA-N [B]=O.[Ta] Chemical compound [B]=O.[Ta] SLYSCVGKSGZCPI-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Embodiments of EUV photomasks and methods for forming a EUV photomask are provided. The method comprises providing a substrate, a reflective layer, a capping layer, a hard mask layer, and forming an opening therein. An absorber layer is then filled in the opening and over the top surface of the hard mask layer. A planarized process is provided to remove the absorber layer above the top surface of the hard mask layer and form an absorber in the opening, wherein the absorber has a top portion wider than a bottom portion.
Description
The cross reference of related application
The application requires the U.S. Provisional Patent Application the 61/788th of submitting on March 15th, 2013, No. 014, title are the right of priority of " Lithography Mask and Methods of Forming and Using the same ", and its full content is hereby expressly incorporated by reference.
Technical field
The field of photomasks that present invention relates in general to be used for producing the semiconductor devices, more specifically, relates to extreme ultraviolet (EUV) photomask and manufacture method thereof.
Background technology
In the manufacture process of integrated circuit (IC) or chip, on a series of reusable photomasks (herein also referred to as mask), produce the pattern of the different layers that represents chip the design of each chip layer is being transferred in Semiconductor substrate during manufacturing process.Very similar with photographic negative, mask is for being transferred to Semiconductor substrate by the circuit pattern of every layer.Use these layers of a series of process combination, and these layers are changed into the small transistor and the circuit that comprise each complete chip.Therefore, any defect in mask all can be transferred on chip, thereby may bring harmful effect to its performance.The defect of especially severe can cause mask to no avail.Conventionally, one group of 15-30 mask is used for forming a chip and can be reused.
Mask generally includes the transparent substrates that is provided with opaque light absorbing zone on it.Traditional masks is usually included in glass or the quartz substrate in its one side with chromium layer.Chromium layer is covered by antireflecting coating and photosensitive photoresist.During Patternized technique, for example, by part photoresist is exposed to electron beam or ultraviolet light, so that expose portion dissolves in developing solution, thereby circuit design is written to mask.Then, remove the soluble fraction of photoresist, to allow chromium layer and the anti-reflecting layer of etching (, removing) below exposing.
Along with dwindling of critical dimension (CD), existing optical lithography is close to the technical limitation of 28 nanometers (nm) technology node.Expect that photoetching of future generation (NGL) can replace existing optical lithography method, for example, the technology node below 22nm.There is the alternative approach of several NGL, carve (EUVL), projection electron lithography (EPL), ion projection's photoetching (IPL), nano impression and X-X-ray lithography X such as extreme ultraviolet (EUV).Certainly, because EUVL has most of characteristic of optical lithography, therefore EUVL is most possible successor, and compared with other NGL methods, EUVL is more proven technique of one.
But the manufacture of EUV mask is still faced with the technological challenge urgently overcoming.For example, in conventional chrome mask, prevent that with film any unwanted dust on mask is transferred on chip.But film can not use together with EUV mask, this is because this film can absorb EUV light.Therefore, do not have thereon, in the situation of film, need to clean the surface of EUV mask.In addition, still need to monitor the lip-deep dust of EUV mask.Therefore, need to improve EUV mask and manufacture method.
Summary of the invention
According to an aspect of the present invention, provide a kind of method of manufacturing extreme ultraviolet photomask, having comprised: provide and comprise successively substrate, reflection horizon and tectal mask; Formation has the opening that is arranged in the Part I of overlayer and is positioned at the Part II of at least a portion in reflection horizon, and the width of Part I is greater than the width of Part II; In opening, form absorption layer with tectal top face; And remove at least a portion of absorption layer and retain another part of absorption layer, to form absorber.
Preferably, the method also comprises: above overlayer, form hard mask layer.
Preferably, hard mask layer is ruthenium (Ru), RuSi or their combination.
Preferably, the method also comprises: form opening at least a portion in overlayer and reflection horizon before, form opening in hard mask layer.
Preferably, the method also comprises: use fluorine base gas, form opening in hard mask layer.
Preferably, the method also comprises: after forming absorber, remove hard mask layer.
Preferably, the ratio of the width of Part I and the width of Part II between approximately 1 to approximately 2 scope.
Preferably, by using the dry etching process of chlorine-based gas to be implemented in the step that forms opening at least a portion in overlayer and reflection horizon.
Preferably, overlayer is silicon (Si).
Preferably, absorption layer is TaSi, TaBN, TaN, TaSiON, TaBO or TaON.
Preferably, reflection horizon is containing molybdenum and silicon (Mo/Si) layer.
Preferably, reflection horizon comprises approximately 40 pairs and about alternately Mo and the Si layer between 50.
Preferably, opening extends to the extremely degree of depth of about 300nm of about 50nm in reflection horizon.
Preferably, remove step and comprise CMP technique and/or dry etching process.
Preferably, the method also comprises: after CMP technique, implement plasma etch process.
According to another aspect of the invention, provide a kind of extreme ultraviolet photomask, having comprised: reflection horizon, has been positioned at substrate top; Overlayer, is positioned at top, reflection horizon; And absorber, being positioned at overlayer and reflection horizon, the width that absorber is arranged in the part of overlayer is greater than absorber and is positioned at the width of the part in reflection horizon.
Preferably, the thickness of absorber between about 50nm in the scope of about 300nm.
Preferably, reflection horizon is containing molybdenum and silicon (Mo/Si) layer.
Preferably, the end face of absorber is higher than tectal end face.
According to another aspect of the invention, a kind of method that forms integrated circuit is provided, comprise: form photomask by following steps: above substrate, forming reflection horizon, forming overlayer and form absorber above reflection horizon in overlayer and reflection horizon, the width that absorber is arranged in the part of overlayer is greater than absorber and is positioned at the width of the part in reflection horizon; On substrate, form layer; And carry out patterned layer with photomask in lithography step.
Brief description of the drawings
When reading in conjunction with the accompanying drawings, the present invention may be better understood according to the following detailed description.Should be emphasized that, according to the standard practices in industry, various parts are not drawn and the object for illustrating only in proportion.In fact,, for the purpose of clear discussion, can increase arbitrarily or reduce the size of various parts.
Fig. 1 is the schematic sectional view that exemplary EUV mask is shown;
Fig. 2 to Fig. 8 is the different cross section figure of EUV mask at the embodiment of each fabrication phase;
Fig. 9 is the process flow diagram of the method for the manufacture EUV mask of the various aspects according to the present invention; And
Figure 10 is the process flow diagram that passes through the method that uses EUV mask manufacturing integration circuit devcie of the various aspects according to the present invention.
Embodiment
The following disclosure provides multiple different embodiment or example, for realizing different characteristic of the present invention.Below by the instantiation of describing parts and layout to simplify the present invention.Certainly, these are only examples and are not intended to limit the present invention.In addition, the present invention can be in different instances repeat reference numerals and/or character.This being recycled and reused for simplified and object clearly, and itself do not represent the relation between discussed multiple embodiment and/or configuration.And, in the following description, parts are formed on another parts, form and be connected to and/or be coupled to another parts and can comprise that these two parts directly contact the embodiment of formation, also can comprise that can between these two parts, form miscellaneous part makes the not direct embodiment of contact of these two parts.In addition, use for example " below ", " above ", " level ", " vertical ", " in ... top ", " in ... below ", " ... on ", " ... under ", the relative space position term at " top " and " bottom " etc. and derivative thereof (for example, " flatly ", " down ", " up " etc.), easily to describe the relation of parts and another parts.The different azimuth of the device that comprises parts is contained in the expection of relative space position term.
Fig. 1 is the schematic sectional view that EUV photomask 100 is shown.In certain embodiments, EUV photomask 100 comprises substrate 110, is arranged in reflection horizon 112 on substrate 110, is positioned at the overlayer 114 on reflection horizon 112 and penetrates overlayer 114 and the absorber 122 of the opening of at least a portion in reflection horizon 112.In certain embodiments, the end face of absorber 122 is higher than the end face of overlayer 114.For example, absorber 122 comprises the top wider than bottom.In certain embodiments, absorber 122 is T shapes.In certain embodiments, absorber 122 has the wide portion that is arranged in overlayer 114 tops and the narrow portion that is positioned at overlayer 114.
Substrate 110 can have any size that is suitable as photomask.In one embodiment, substrate 110 is rectangles, and the length of its side is in the scope of approximately 5 inches to approximately 9 inches.At another embodiment, the thickness of substrate 110 is in the scope of about 0.15 inch to approximately 0.25 inch.In other embodiments, the thickness of substrate 110 is about 0.25 inch.In certain embodiments, substrate 110 has low thermal coefficient of expansion and (is preferably 0 ± 0.05 × 10
-7/ DEG C, be especially preferably 0 ± 0.03 × 10 at 20 DEG C
-7/ DEG C), and after forming pattern, to thering is good smoothness, flatness and durability for the cleaning fluid that cleans mask base plate (mask blank) or photomask.Substrate 110 generally includes the silica-base material with low thermal coefficient of expansion, such as quartz (, silicon dioxide SiO
2) etc.
The high reflectance to EUV light can be realized in reflection horizon 112.For example, in the time of EUV irradiation that the surface in reflection horizon 112 is about 13.5nm by wavelength, the reflectivity in reflection horizon 112 is up to 40%.In the present embodiment, the laminated reflective film by repeatedly alternatively laminated high refractive index layer and low-index layer form is used as to reflection horizon 112.In certain embodiments, Mo is used for high refractive index layer for low-index layer and Si, to form the laminated reflective film in reflection horizon 112., form Mo/Si laminated reflective film for forming reflection horizon 112.In one embodiment, reflection horizon 112 can comprise alternately Mo and the Si layer between approximately 40 pairs to approximately 50 pairs.The every couple of Mo and Si layer can comprise that thickness is the Mo layer of about 3nm and the Si layer that thickness is about 4nm.
In optional embodiment, laminated reflective film is Ru/Si laminated reflective film, Mo/Be laminated reflective film, Mo compound/Si compound laminated reflective film, Si/Mo/Ru laminated reflective film, Si/Mo/Ru/Mo laminated reflective film or Si/Ru/Mo/Ru laminated reflective film.
Overlayer 114 is as overlayer and/or cushion between the hard mask layer existing in reflection horizon 112 with in being used to form the middle process of photomask.In certain embodiments, overlayer 114 is silicon (Si) layer, ruthenium (Ru) layer or contains Ru layer.For example, the thickness of overlayer 114 between about 1nm in the scope of about 10nm.
For example, absorber 122 comprises the top that is positioned at overlayer 114 tops and the bottom that is positioned at reflection horizon 112 and overlayer 114.The top of absorber 122 has width W 1 and thickness T 1.The bottom of absorber 122 has width W 2 and thickness T 2.In certain embodiments, absorber 122 is T shapes, and its width W 1 is greater than width W 2.In the present embodiment, the ratio of width W 1 and width W 2 is in approximately 1 and approximately 2 scope.In certain embodiments, thickness T 1 is less than thickness T 2.In the present embodiment, thickness T 1 between about 0nm in the scope of about 10nm.In one embodiment, thickness T 2 is at least greater than 20nm, to prevent light leak in wafer photo-etching technological process or poor contrast (poor contrast).In optional embodiment, thickness T 2 is not more than about 150nm, closes on correction (OPC) to prevent from being difficult to carry out the optics that is used to form mask.In another embodiment, thickness T 2 is identical with the gross thickness in reflection horizon 112.In other embodiments, thickness T 2 is identical with the gross thickness of reflection horizon 112 and overlayer 114.In the present embodiment, thickness T 2 between about 20nm in the scope of about 150nm.
Absorber 122 is opaque light shield layers.In one embodiment, absorber 122 comprises substantially oxygen-free tantalum-based materials, such as tantalum silicide sill (being referred to as below TaSi), tantalum boron nitride sill (being referred to as below TaBN) and tantalum nitride sill (being referred to as below TaN).In another embodiment, absorber 122 comprises tantalum base and oxygen sill, such as oxidation and tantalum nitride and silica-base material (being referred to as below TaSiON), tantalum oxide Boron Based Materials (being referred to as below TaBO) and oxidation and tantalum nitride sill (being referred to as below TaON).
Fig. 2 to Fig. 8 is the schematic sectional view that the exemplary process flow that is used to form EUV photomask is shown.Increase by 100 with identical reference number and represent the content shown in Fig. 2 to Fig. 8 identical with the content shown in Fig. 1.Referring to figs. 2 to Fig. 8 and Fig. 9, EUV photomask 200 and method 300 below will be described jointly.
Referring to figs. 2 to Fig. 9, method 300 starts from step 302, forms reflection horizon 212 above substrate 210.In certain embodiments, above reflection horizon 212, form overlayer 214.In certain embodiments, above overlayer 214, form hard mask layer 216.In certain embodiments, substrate 210 is rectangular substrate, the length of its side in the scope of approximately 5 inches to approximately 9 inches, and the thickness of substrate 210 between approximately 0.15 inch to the scope of 0.25 inch.In certain embodiments, substrate 210 has low thermal coefficient of expansion and (is preferably 0 ± 0.05 × 10
-7/ DEG C, be especially preferably 0 ± 0.03 × 10 at 20 DEG C
-7/ DEG C), and after forming pattern, should there is good smoothness, flatness and durability to the cleaning fluid for cleaning mask base plate or photomask.Substrate 210 generally includes the silica-base material with low thermal coefficient of expansion, such as quartz (, silicon dioxide SiO
2) etc.
The high reflectance to EUV light can be realized in reflection horizon 212.For example, in the time of EUV irradiation that the surface in reflection horizon 212 is about 13.5nm by wavelength, the reflectivity in reflection horizon 212 is up to 40%.In certain embodiments, reflection horizon 212 is many material layers.In certain embodiments, by repeatedly alternatively laminated high refractive index layer and low-index layer form laminated reflective film.In the present embodiment, Mo is used for high refractive index layer for low-index layer and Si, to form the laminated reflective film in reflection horizon 212., form Mo/Si laminated reflective film for forming reflection horizon 212.In one embodiment, reflection horizon 212 can comprise alternately Mo and the Si layer between approximately 40 pairs to approximately 50 pairs.The every couple of Mo and Si layer all can comprise that thickness is the Mo layer of about 3nm and the Si layer that thickness is about 4nm.
In optional embodiment, laminated reflective film is Ru/Si laminated reflective film, Mo/Be laminated reflective film, Mo compound/Si compound laminated reflective film, Si/Mo/Ru laminated reflective film, Si/Mo/Ru/Mo laminated reflective film or Si/Ru/Mo/Ru laminated reflective film.In certain embodiments, form reflection horizon 212 by depositing operation (comprising chemical vapor deposition (CVD), physical vapor deposition (PVD), ald (ALD) and/or other suitable technique).
Overlayer 214 can be used as overlayer and/or the cushion between reflection horizon 212 and hard mask layer 216.In the present embodiment, overlayer 214 is silicon (Si) layer, ruthenium (Ru) layer or contains Ru layer.In certain embodiments, the thickness of overlayer 214 between about 1nm in the scope of about 10nm.In optional embodiment, the thickness of overlayer 214 is about 2.5nm.In certain embodiments, form overlayer 214 by depositing operation (comprising CVD, PVD, ALD and/or other suitable technique).
In certain embodiments, hard mask layer 216 comprises ruthenium (Ru), RuSi or their combination.In one embodiment, the thickness of hard mask layer 216 between about 2nm in the scope of about 15nm.In another embodiment, the thickness of hard mask layer 216 is about 5nm.In certain embodiments, form hard mask layer 216 by CVD, PVD, ALD and/or other suitable technique.
With reference to figure 3 to Fig. 5 and Fig. 9, method 300 is proceeded step 304, and Patternized technique is carried out in reflection horizon 212, to form therein opening 220.In the present embodiment, opening 220 is positioned at hard mask layer 216, overlayer 214 and reflection horizon 212 (with reference to figure 5).Patternized technique can be included in hard mask layer 216 tops and form photoresist parts 218, then removes the part not covered by photoresist parts 218 in hard mask layer 216.
In certain embodiments, the technique that forms photoresist parts 218 comprises by suitable technique (such as spin coating) and above hard mask layer 216, forms photoresist layer (not shown), then, photoresist layer exposed and develop to form by the separated photoresist parts of interval S 218(with reference to figure 3).Photoresist parts 218 partly expose lower floor's hard mask layer 216.In addition, optionally between hard mask layer 216 and photoresist layer, form antireflecting coating (ARC) (not shown), to improve Patternized technique.
With reference to figure 4, implement to remove technique to remove the part not covered by photoresist parts 218 in hard mask layer 216, thereby the pattern transfer of photoresist parts 218 is arrived to the hard mask layer 216 of lower floor.In certain embodiments, remove technique and comprise use halogen based gases (for example Cl
2, CHF
3, CH
3f, C
4f
8, CF
4, SF
6, CF
3cl or their potpourri) etch process that carries out, to remove the unmasked portion of hard mask layer 216.Then, etch process stops at lower floor's overlayer 214 and exposes the part of overlayer 214.
With reference to figure 5, then remove the part in art pattern CAD overlayer 214 and reflection horizon 212 by single or multiple, to form opening 220.Opening 220 has width W 2 and in patterning overlayer 214, has width W 1 in pattern reflecting layer 212.In certain embodiments, width W 1 is greater than width W 2.In the present embodiment, the ratio of width W 1 and width W 2 between approximately 1 to approximately 2 scope.
In the present embodiment, form opening 220 by single dry etching process.During dry etching process, between overlayer 214 and reflection horizon 212, produce etching selectivity, for example the etch-rate of overlayer 214 is greater than to the etch-rate to reflection horizon 212.Therefore, form opening 220 by dry etching process, wherein width W 1 is greater than width W 2.In certain embodiments, use chlorine-based gas (for example, Cl
2or CCl
4) implement etch process, the part covering to remove the hard mask layer 216 that is not patterned in overlayer 214, thus expose the part in lower floor reflection horizon 212.In one embodiment, during etch process, after removing coverage mask layer 214, continue to remove at least a portion in lower floor reflection horizon.In another embodiment, remove at least a portion in lower floor reflection horizon 212 by the independent etch process different from the second etch process.In certain embodiments, by using Cl
2, F
2or their potpourri is removed reflection horizon 212.In one embodiment, reflection horizon 212 is partially removed to about 50nm to the thickness between about 300nm.In another embodiment, reflection horizon 212 is fully removed and is stopped on the surface of substrate 210.
After the etch process of hard mask layer 216, after overlayer 214 etch processs or after the etch process in reflection horizon 212, can remove photoresist parts 218.In certain embodiments, by implementing, known wet method of the prior art is peeled off and/or plasma ashing is removed photoresist parts 218.For example, can implement oxygen plasma ashing and remove photoresist parts 218.
With reference to figure 6 and Fig. 9, method 300 is proceeded step 306, and wherein, absorption layer 222 is filled in opening 220, the top of the end face of 212 tops, reflection horizon and hard mask layer 216.Absorption layer 222 is opaque light shield layers, and its thickness between about 20nm in the scope of about 500nm.In one embodiment, absorption layer 222 comprises substantially oxygen-free tantalum-based materials, such as tantalum silicide sill (being referred to as below TaSi), tantalum boron nitride sill (being referred to as below TaBN) and tantalum nitride sill (being referred to as below TaN).In another embodiment, absorption layer 222 comprises tantalum base and oxygen sill, such as oxidation and tantalum nitride and silica-base material (being referred to as below TaSiON), boron oxide tantalum-based materials (being referred to as below TaBO) and oxidation and tantalum nitride sill (being referred to as below TaON).Can use PVD(such as sputter and evaporation), plating, CVD(such as plasma enhanced CVD (PECVD), atmospheric pressure cvd (APCVD), low pressure chemical vapor deposition (LPCVD), high-density plasma CVD (HDPCVD), atomic layer CVD(ALCVD)), other suitable depositing operations and/or their combination deposit absorption layer 222.
With reference to figure 7 and Fig. 8, method 300 is proceeded step 308, wherein, absorption layer 222 is implemented to remove technique.Remove the part that is positioned at opening 220 and hard mask layer 216 tops in absorption layer 222, to form absorber 222 ' in opening 220.In certain embodiments, the end face of absorber 222 ' substantially with the end face copline of hard mask layer 216.In optional embodiment, the end face of absorber 222 ' is substantially lower than the end face of hard mask layer 216, but higher than the bottom surface of hard mask layer 216.In one embodiment, remove technique and can comprise chemically mechanical polishing (CMP) technique that uses fluorine-based lapping liquid.In another embodiment, remove technique and can comprise use CF
4, Cl
2or the dry etching process of their combination.In other embodiments, first remove technique by CMP technique, to remove a part for absorption layer 222 and to retain a part that is positioned at opening 220 and hard mask layer 216 tops in absorption layer 222.Then, provide dry etching process, to remove the extra absorption layer 222 in opening 220 tops, to form absorber 222 '.During CMP or dry etching process, hard mask layer 216 can be used as stop-layer, with the CMP or the dry etching process that stop carrying out on it.
With reference to figure 8, form absorber 222 ' afterwards, remove hard mask layer 216.In certain embodiments, remove technique and comprise dry etching process.For example, use halogen radical etching gas (for example to comprise, containing F gas (, CF
4, SF
6, CHF
3), for example, containing Cl gas (, Cl
2, CCl
4) or for example, containing Br gas (, HBr, Br
2)) carry out dry etching process.During etch process, can in etching gas, add the diluents such as He or Ar.In optional embodiment, removing technique is wet etching process or CMP.
With reference to Figure 10, below the process flow diagram of the method 400 by using EUV mask manufacturing integration circuit devcie will be described.Method 400 starts from step 402, and the Semiconductor substrate with material layer is provided.Method 400 is proceeded step 404, to form photoresist layer above material layer.Then, method 400 is proceeded step 406, carrys out patterning photoresist layer with the EUV mask by with describing in above-mentioned photoetching process.Method 400 is proceeded step 408, to carry out patterned material layer by the photoresist layer of patterning is used as to etching mask.
It should be noted that and be easy to clean the EUV mask with flat surfaces.In addition the EUV mask being easy to having flat surfaces, carries out dust monitoring technique.In addition, can improve optical property (for example contrast) by T shape absorber, and be easy to control the etch process of manufacturing T shape absorber.
It should be noted that the integrated circuit (IC)-components by using EUV mask process can prevent that the less desirable dust on mask is transferred on chip.
It should be noted that the method that above combination Fig. 2 to Fig. 8 describes is only exemplary.Those of ordinary skill in the art can revise the flow process of the method to obtain the EUV photomask of expecting.For example, partially absorb layer 222 removal technique and can form absorber 222 ' for removing, its end face a little less than or higher than the end face of hard mask layer 216.
In another other embodiment, removing during technique, can remove hard mask layer 216, thereby make the end face of absorber 222 ' can be substantially substantially flush with the end face of overlayer 214.
In one embodiment, the method for manufacture extreme ultraviolet mask comprises: mask is provided, and this mask comprises substrate, reflection horizon and overlayer successively; Formation has the opening of the Part II that is arranged in the Part I of overlayer and at least a portion in reflection horizon, and wherein, the width of Part I is greater than the width of Part II; In opening, form absorption layer with tectal top face; And at least a portion of removal absorption layer, and another part of reservation absorption layer, thereby form absorber.
In other embodiments, a kind of extreme ultraviolet mask comprises: be arranged in substrate top reflection horizon, be positioned at the overlayer of top, reflection horizon and be positioned at overlayer and the absorber in reflection horizon.The width that is arranged in the part of overlayer in absorber is greater than absorber and is positioned at the width of the part in reflection horizon.
In yet another embodiment, a kind of method that forms integrated circuit comprises: by forming reflection horizon above substrate, forming photomask forming overlayer above reflection horizon and form absorber in overlayer and reflection horizon; On substrate, form layer; And carry out this layer of patterning with photomask in lithography step.The width that is arranged in the part of overlayer in absorber be greater than absorber be positioned at reflection horizon absorber width.
Discuss the feature of some embodiment above, made those of ordinary skill in the art's various aspects that the present invention may be better understood.It will be understood by those skilled in the art that they can design or revise other easily for reaching and the identical object of embodiment of introducing and/or technique and the structure that realizes same advantage herein as basis with the present invention.Those of ordinary skill in the art also should be appreciated that this equivalent constructions does not deviate from the spirit and scope of the present invention, and in the situation that not deviating from the spirit and scope of the present invention, can make multiple variation, replacement and change to the present invention.
Claims (10)
1. a method of manufacturing extreme ultraviolet photomask, comprising:
Provide and comprise successively substrate, reflection horizon and tectal mask;
Formation has the opening that is arranged in the Part I of described overlayer and is positioned at the Part II of at least a portion in described reflection horizon, and the width of described Part I is greater than the width of described Part II;
In described opening, form absorption layer with described tectal top face; And
Remove at least a portion of described absorption layer and retain another part of described absorption layer, to form absorber.
2. method according to claim 1, also comprises: above described overlayer, form hard mask layer.
3. method according to claim 2, wherein, described hard mask layer is ruthenium (Ru), RuSi or their combination.
4. method according to claim 2, also comprises: form described opening at least a portion in described overlayer and described reflection horizon before, in described hard mask layer, form opening.
5. method according to claim 2, also comprises: use fluorine base gas, in described hard mask layer, form opening.
6. method according to claim 2, also comprises: after forming described absorber, remove described hard mask layer.
7. method according to claim 1, wherein, the ratio of the width of described Part I and the width of described Part II between approximately 1 to approximately 2 scope.
8. method according to claim 1, wherein, by using the dry etching process of chlorine-based gas to be implemented in the step that forms opening at least a portion in described overlayer and described reflection horizon.
9. an extreme ultraviolet photomask, comprising:
Reflection horizon, is positioned at substrate top;
Overlayer, is positioned at top, described reflection horizon; And
Absorber, is positioned at described overlayer and described reflection horizon, and the width that described absorber is arranged in the part of described overlayer is greater than described absorber and is positioned at the width of the part in described reflection horizon.
10. a method that forms integrated circuit, comprising:
Form photomask by following steps:
Above substrate, form reflection horizon;
Above described reflection horizon, form overlayer; With
In described overlayer and described reflection horizon, form absorber, the width that described absorber is arranged in the part of described overlayer is greater than described absorber and is positioned at the width of the part in described reflection horizon;
On substrate, form layer; And
In lithography step, carry out layer described in patterning with described photomask.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361788014P | 2013-03-15 | 2013-03-15 | |
| US61/788,014 | 2013-03-15 | ||
| US13/950,020 | 2013-07-24 | ||
| US13/950,020 US9310675B2 (en) | 2013-03-15 | 2013-07-24 | Extreme ultraviolet light (EUV) photomasks, and fabrication methods thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104049455A true CN104049455A (en) | 2014-09-17 |
| CN104049455B CN104049455B (en) | 2017-12-19 |
Family
ID=51418651
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310499322.0A Expired - Fee Related CN104049455B (en) | 2013-03-15 | 2013-10-22 | Extreme ultraviolet（EUV）Photomask and its manufacture method |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104049455B (en) |
| DE (1) | DE102013108872B4 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104298068A (en) * | 2014-09-26 | 2015-01-21 | 中国科学院长春光学精密机械与物理研究所 | Extreme-ultraviolet photoetching mask structure for large-value pore diameter |
| CN105446071A (en) * | 2015-12-21 | 2016-03-30 | 中国科学院长春光学精密机械与物理研究所 | Mask structure for high NA ultraviolet photolithography objective lens |
| CN109491192A (en) * | 2017-09-09 | 2019-03-19 | Imec 非营利协会 | Reticles for EUV Lithography |
| TWI655495B (en) * | 2017-04-12 | 2019-04-01 | 美商格芯（美國）集成電路科技有限公司 | Extreme ultraviolet lithography (euvl) reflective mask and method of forming the same |
| CN110797257A (en) * | 2019-11-15 | 2020-02-14 | 上海集成电路研发中心有限公司 | A Graphical Delivery Method |
| CN112612177A (en) * | 2020-12-16 | 2021-04-06 | 上海华力微电子有限公司 | Mask and preparation method thereof and photoetching machine |
| CN113238455A (en) * | 2020-05-22 | 2021-08-10 | 台湾积体电路制造股份有限公司 | EUV photomask and method of manufacturing the same |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118112886B (en) * | 2023-12-01 | 2024-10-22 | 无锡迪思微电子有限公司 | Method and equipment for cleaning photoetching mask plate |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1516827A (en) * | 2001-08-24 | 2004-07-28 | ض� | Damascene extreme ultraviolet lithography alternative phase shift photomask and method of making |
| CN1695093A (en) * | 2001-07-31 | 2005-11-09 | 英特尔公司 | Damascene extreme ultraviolet lithography (euvl) photomask and method of making |
| US20120045712A1 (en) * | 2010-08-17 | 2012-02-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Extreme ultraviolet light (euv) photomasks, and fabrication methods thereof |
| JP2012209481A (en) * | 2011-03-30 | 2012-10-25 | Toppan Printing Co Ltd | Reflective mask blank and method of manufacturing reflective mask blank |
| CN102947759A (en) * | 2010-06-15 | 2013-02-27 | 卡尔蔡司Smt有限责任公司 | Mask for EUV lithography, EUV lithography system and method for optimising the imaging of a mask |
-
2013
- 2013-08-16 DE DE102013108872.4A patent/DE102013108872B4/en active Active
- 2013-10-22 CN CN201310499322.0A patent/CN104049455B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1695093A (en) * | 2001-07-31 | 2005-11-09 | 英特尔公司 | Damascene extreme ultraviolet lithography (euvl) photomask and method of making |
| CN1516827A (en) * | 2001-08-24 | 2004-07-28 | ض� | Damascene extreme ultraviolet lithography alternative phase shift photomask and method of making |
| CN102947759A (en) * | 2010-06-15 | 2013-02-27 | 卡尔蔡司Smt有限责任公司 | Mask for EUV lithography, EUV lithography system and method for optimising the imaging of a mask |
| US20120045712A1 (en) * | 2010-08-17 | 2012-02-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Extreme ultraviolet light (euv) photomasks, and fabrication methods thereof |
| JP2012209481A (en) * | 2011-03-30 | 2012-10-25 | Toppan Printing Co Ltd | Reflective mask blank and method of manufacturing reflective mask blank |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104298068A (en) * | 2014-09-26 | 2015-01-21 | 中国科学院长春光学精密机械与物理研究所 | Extreme-ultraviolet photoetching mask structure for large-value pore diameter |
| CN105446071A (en) * | 2015-12-21 | 2016-03-30 | 中国科学院长春光学精密机械与物理研究所 | Mask structure for high NA ultraviolet photolithography objective lens |
| TWI655495B (en) * | 2017-04-12 | 2019-04-01 | 美商格芯（美國）集成電路科技有限公司 | Extreme ultraviolet lithography (euvl) reflective mask and method of forming the same |
| CN109491192A (en) * | 2017-09-09 | 2019-03-19 | Imec 非营利协会 | Reticles for EUV Lithography |
| CN109491192B (en) * | 2017-09-09 | 2021-06-25 | Imec 非营利协会 | Reticles for EUV Lithography |
| CN110797257A (en) * | 2019-11-15 | 2020-02-14 | 上海集成电路研发中心有限公司 | A Graphical Delivery Method |
| CN113238455A (en) * | 2020-05-22 | 2021-08-10 | 台湾积体电路制造股份有限公司 | EUV photomask and method of manufacturing the same |
| CN112612177A (en) * | 2020-12-16 | 2021-04-06 | 上海华力微电子有限公司 | Mask and preparation method thereof and photoetching machine |
| CN112612177B (en) * | 2020-12-16 | 2024-01-23 | 上海华力微电子有限公司 | Mask, preparation method thereof and photoetching machine |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102013108872B4 (en) | 2018-05-09 |
| DE102013108872A1 (en) | 2014-09-18 |
| CN104049455B (en) | 2017-12-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9869928B2 (en) | Extreme ultraviolet light (EUV) photomasks, and fabrication methods thereof | |
| US9588419B2 (en) | Extreme ultraviolet light (EUV) photomasks and fabrication methods thereof | |
| US8764995B2 (en) | Extreme ultraviolet light (EUV) photomasks, and fabrication methods thereof | |
| US6583068B2 (en) | Enhanced inspection of extreme ultraviolet mask | |
| CN104049455A (en) | Extreme Ultraviolet Light (EUV) Photomasks, and Fabrication Methods Thereof | |
| CN100474105C (en) | Alternating phase shift photomask for damascene extreme ultraviolet lithography and method of manufacture | |
| US9354510B2 (en) | EUV mask and method for forming the same | |
| US12253796B2 (en) | Extreme ultraviolet mask and method for forming the same | |
| JP5332741B2 (en) | Reflective photomask | |
| JP7286544B2 (en) | Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method for manufacturing semiconductor device | |
| US7074527B2 (en) | Method for fabricating a mask using a hardmask and method for making a semiconductor device using the same | |
| US9250513B2 (en) | Method of manufacturing an extreme ultraviolet (EUV) mask and the mask manufactured therefrom | |
| JP6800779B2 (en) | Manufacturing method of transfer mask and manufacturing method of semiconductor device | |
| JP2012049243A (en) | Reflective mask for euv exposure and method for manufacturing the same | |
| JP7168573B2 (en) | Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method for manufacturing semiconductor device | |
| KR20210155863A (en) | Phase shift mask for extreme ultraviolet lithography and method of forming a semiconductor device using the same | |
| JP4483355B2 (en) | Ultraviolet exposure mask blank, mask and transfer method | |
| JP4529359B2 (en) | Ultraviolet exposure mask, blank and pattern transfer method | |
| KR100735530B1 (en) | Reflective photomask comprising a reflective layer having a step and a manufacturing method thereof | |
| TWI495950B (en) | Mask and methods of fabricating the same | |
| US20240053669A1 (en) | Euv photo masks and manufacturing method thereof | |
| JP2012038787A (en) | Method of manufacturing reflective mask blank having pseudo phase defect, and method of manufacturing reflective mask having pseudo phase defect | |
| JP2012124196A (en) | Method of manufacturing reflection-type phase shift mask for euv light exposure | |
| JP2025129389A (en) | Reflective Photomask Blanks |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171219 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |