CN104167480B - Method for manufacturing light-emitting diode - Google Patents
Method for manufacturing light-emitting diode Download PDFInfo
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- CN104167480B CN104167480B CN201310185651.8A CN201310185651A CN104167480B CN 104167480 B CN104167480 B CN 104167480B CN 201310185651 A CN201310185651 A CN 201310185651A CN 104167480 B CN104167480 B CN 104167480B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0362—Manufacture or treatment of packages of encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
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Abstract
本发明提供一种发光二极管制造方法,包括以下步骤:提供一个金属支架,该金属支架上设置有多个第一电极以及与多个第二电极;形成一杯壳包覆在该金属支架上,该杯壳包括多个反射杯,每个第一电极以及与其对应的第二电极的部分暴露在该反射杯的底部;提供一紫外光解胶膜,其设置在该杯壳的远离该反射杯的一侧,该紫外光解胶膜通过照射紫外线方式能失去粘性;提供多个发光二极管晶粒,每个发光二极管晶粒设置在一个反射杯内,并分别和与其对应的第一电极以及第二电极电连接;切割该杯壳,以使该多个发光二极管单元相互分开;照射紫外光,该紫外光解胶膜在紫外光的照射下失去粘性,从而该多个发光二极管单元与该紫外光解胶膜分离,从而形成多个发光二极管。
The invention provides a method for manufacturing a light-emitting diode, comprising the following steps: providing a metal support on which a plurality of first electrodes and a plurality of second electrodes are arranged; forming a cup to cover the metal support, the The cup shell includes a plurality of reflective cups, and the part of each first electrode and its corresponding second electrode is exposed at the bottom of the reflective cup; an ultraviolet photolytic adhesive film is provided, which is arranged on the part of the cup shell far away from the reflective cup On one side, the UV photolytic adhesive film can lose its viscosity by irradiating ultraviolet rays; provide a plurality of light-emitting diode crystal grains, each light-emitting diode crystal grain is arranged in a reflective cup, and is respectively connected with the first electrode corresponding to it and the second electrode The electrodes are electrically connected; cutting the cup shell so that the plurality of LED units are separated from each other; irradiating ultraviolet light, the ultraviolet photolytic adhesive film loses its viscosity under the irradiation of ultraviolet light, so that the plurality of LED units and the ultraviolet light The debonding film is separated, thereby forming a plurality of light emitting diodes.
Description
技术领域technical field
本发明涉及一种发光二极管的制造方法。The invention relates to a method for manufacturing a light emitting diode.
背景技术Background technique
相比于传统的发光源,发光二极管(Light Emitting Diode,LED)具有重量轻、体积小、污染低、寿命长等优点,其作为一种新型的发光源,已经被越来越多地应用到各领域当中,如路灯、交通灯、信号灯、射灯及装饰灯等。Compared with traditional light sources, light emitting diodes (Light Emitting Diode, LED) have the advantages of light weight, small size, low pollution, long life, etc. As a new type of light source, it has been increasingly used in In various fields, such as street lights, traffic lights, signal lights, spotlights and decorative lights.
业内制作发光二极管时,通过在金属支架上形成有多对电极,并通常采用注塑成型方式在金属支架上包覆一个高分子化合物,其中,高分子化合物形成多个反射杯,每个反射杯内设置一个发光二极管晶粒。然后,通过切割的方法,分离该多个发光二极管晶粒,以形成多个发光二极管。然,现有的分离过程较为繁琐,从而影响了制程的速度。When making light-emitting diodes in the industry, multiple pairs of electrodes are formed on the metal bracket, and a polymer compound is usually coated on the metal bracket by injection molding, wherein the polymer compound forms multiple reflective cups, and each reflective cup Set up an LED die. Then, the plurality of LED crystal grains are separated by cutting to form a plurality of LEDs. However, the existing separation process is relatively cumbersome, which affects the speed of the manufacturing process.
发明内容Contents of the invention
鉴于此,有必要提供一种速度较快的发光二极管制造方法。In view of this, it is necessary to provide a faster manufacturing method for light-emitting diodes.
一种发光二极管制造方法,包括以下步骤:A method of manufacturing a light emitting diode, comprising the steps of:
提供一个金属支架,该金属支架上设置有多个第一电极以及与该多个第一电极一一对应的多个第二电极;A metal support is provided, and a plurality of first electrodes and a plurality of second electrodes corresponding to the plurality of first electrodes are arranged on the metal support;
形成一杯壳包覆在该金属支架上,该杯壳包括多个反射杯,每个第一电极以及与其对应的第二电极的部分暴露在该反射杯的底部;A cup shell is formed to cover the metal bracket, the cup shell includes a plurality of reflective cups, and a part of each first electrode and its corresponding second electrode is exposed at the bottom of the reflective cup;
提供一紫外光解胶膜,其设置在该杯壳的远离该反射杯的一侧,该紫外光解胶膜通过照射紫外线方式能失去粘性;Provide an ultraviolet photolytic adhesive film, which is arranged on the side of the cup shell away from the reflective cup, and the ultraviolet photolytic adhesive film can lose its viscosity by irradiating ultraviolet rays;
提供多个发光二极管晶粒,每个发光二极管晶粒设置在一个反射杯内,并分别和与其对应的第一电极以及第二电极电连接,每个反射杯、设置在该反射杯内的发光二极管晶粒、以及与该发光二极管晶粒电连接的第一电极与第二电极形成一个发光二极管单元;Provide a plurality of light-emitting diode crystal grains, each light-emitting diode crystal grain is arranged in a reflective cup, and is respectively electrically connected to the first electrode and the second electrode corresponding to it, each reflective cup, the light-emitting diode arranged in the reflective cup The diode crystal grain, and the first electrode and the second electrode electrically connected to the light emitting diode crystal grain form a light emitting diode unit;
切割该杯壳,以使该多个发光二极管单元相互分开;cutting the cup so that the plurality of LED units are separated from each other;
照射紫外光,该紫外光解胶膜在紫外光的照射下失去粘性,从而该多个发光二极管单元与该紫外光解胶膜分离,从而形成多个发光二极管。After irradiating ultraviolet light, the ultraviolet photolytic adhesive film loses its viscosity under the irradiation of ultraviolet light, so that the plurality of light-emitting diode units are separated from the ultraviolet photolytic adhesive film, thereby forming a plurality of light-emitting diodes.
与现有技术相比较,本发明的发光二极管制造方法中采用紫外光解胶膜承载发光二极管单元,并通过照射紫外光以使紫外光解胶膜失去粘性,从而形成多个发光二极管。本发明利用紫外光解胶膜在紫外光的照射下失去粘性的特性,提高了制造发光二极管的速度。Compared with the prior art, in the manufacturing method of the LED of the present invention, the UV photolytic adhesive film is used to carry the LED unit, and the ultraviolet photolytic adhesive film is irradiated with ultraviolet light to make the UV photolytic adhesive film lose its viscosity, thereby forming a plurality of LEDs. The invention utilizes the characteristic that the ultraviolet photolytic adhesive film loses viscosity under the irradiation of ultraviolet light, and improves the speed of manufacturing the light-emitting diode.
下面参照附图,结合具体实施方式对本发明作进一步的描述。The present invention will be further described below in conjunction with specific embodiments with reference to the accompanying drawings.
附图说明Description of drawings
图1至图9为本发明第一实施方式提供的发光二极管制造方法的流程示意图。1 to 9 are schematic flowcharts of a method for manufacturing a light emitting diode provided in the first embodiment of the present invention.
图10为本发明第二实施方式提供的发光二极管制造方法的流程示意图。FIG. 10 is a schematic flowchart of a method for manufacturing a light emitting diode provided in the second embodiment of the present invention.
主要元件符号说明
如下具体实施方式将结合上述附图进一步说明本发明。The following specific embodiments will further illustrate the present invention in conjunction with the above-mentioned drawings.
具体实施方式detailed description
本发明第一实施例提供的发光二极管制造方法包括以下步骤:The light emitting diode manufacturing method provided by the first embodiment of the present invention includes the following steps:
请参见图1与图2,提供一个金属支架10,该金属支架10上设置有多个第一电极11以及与该多个第一电极11一一对应的多个第二电极12。在本实施例中,该多个第一电极11与该多个第二电极12阵列且间隔排布。每个第一电极11上具有一个第一通孔110,每个第二电极12上具有一个第二通孔120。Referring to FIG. 1 and FIG. 2 , a metal support 10 is provided, and a plurality of first electrodes 11 and a plurality of second electrodes 12 corresponding to the plurality of first electrodes 11 are arranged on the metal support 10 . In this embodiment, the plurality of first electrodes 11 and the plurality of second electrodes 12 are arrayed and arranged at intervals. Each first electrode 11 has a first through hole 110 , and each second electrode 12 has a second through hole 120 .
请参见图3与图4,形成一杯壳20包覆在该金属支架10上,该杯壳20包括多个反射杯21,每个第一电极11以及与其对应的第二电极12的部分暴露在该反射杯21的底部。在本实施例中,该杯壳20通过注塑成型的方式形成。具体地,提供一个第一模具22以及一个与该第一模具22相配合的第二模具23。该第一模具22的剖面呈U型,其用于收容该金属支架10以及该第一电极11以及该第二电极12。该第二模具23外框的剖面成U型,中间具有一个向U型开口处凸起的梯形状的凸起,其抵靠在该第一电极11以及第二电极12上。第一模具22与该第二模具23配合形成一腔体24,向该腔体24内注入液态的高分子化合物,经过冷却形成包覆于该金属支架10的杯壳20。在本实施例中,高分子化合物可以为聚邻苯二甲酰胺(Polyphthalamide,PPA)、环氧树脂(Epoxy)、硅酮(silicone)等。3 and 4, a cup shell 20 is formed to cover the metal bracket 10, the cup shell 20 includes a plurality of reflective cups 21, and each first electrode 11 and its corresponding second electrode 12 are partly exposed. The bottom of the reflecting cup 21. In this embodiment, the cup shell 20 is formed by injection molding. Specifically, a first mold 22 and a second mold 23 matched with the first mold 22 are provided. The cross section of the first mold 22 is U-shaped, and it is used to accommodate the metal frame 10 , the first electrode 11 and the second electrode 12 . The cross section of the outer frame of the second mold 23 is U-shaped, and there is a trapezoidal protrusion protruding toward the U-shaped opening in the middle, which abuts against the first electrode 11 and the second electrode 12 . The first mold 22 cooperates with the second mold 23 to form a cavity 24 , inject liquid polymer compound into the cavity 24 , and form the cup shell 20 covering the metal bracket 10 after cooling. In this embodiment, the polymer compound may be polyphthalamide (Polyphthalamide, PPA), epoxy resin (Epoxy), silicone (silicone) and the like.
请参见图5,提供一紫外光解胶膜30(UV tape),其设置在该杯壳20的远离该反射杯21的一侧,该紫外光解胶膜30通过照射紫外线方式能失去粘性。该紫外光解胶膜30在一般情况下具有粘性,其可以与该杯壳20紧密连接,经过紫外光的照射后,其能失去粘性。Referring to FIG. 5 , an ultraviolet photolytic adhesive film 30 (UV tape) is provided, which is disposed on the side of the cup shell 20 away from the reflective cup 21 , and the ultraviolet photolytic adhesive film 30 can lose its viscosity by irradiating ultraviolet rays. Generally, the ultraviolet photolytic adhesive film 30 is viscous and can be tightly connected with the cup shell 20 , and loses its viscous properties after being irradiated by ultraviolet light.
请参见图6,提供一个光罩40,该光罩40设置在该紫外光解胶膜30的远离该反射杯21的一侧,该光罩40包括多个间隔排布的镂空区域41以及遮蔽区域42。Referring to Fig. 6, a photomask 40 is provided, and the photomask 40 is arranged on the side of the ultraviolet photolytic adhesive film 30 away from the reflective cup 21. Area 42.
请一并参见图7,提供多个发光二极管晶粒50,每个发光二极管晶粒50设置在一个反射杯21内,并分别和与其对应的第一电极11以及第二电极12电连接,每个反射杯21、设置在该反射杯21内的发光二极管晶粒50、以及与该发光二极管晶粒50电连接的第一电极11与第二电极12形成一个发光二极管单元51。在本实施例中,发光二极管晶粒50设置在第一电极11上,并通过导线与第二电极12电连接。当然,该发光二极管晶粒50也可以设置在第二电极12上,或者设置在该杯壳20的暴露于该反射杯21底部的部分上。在本实施例中,该光罩40的每个镂空区域41与一个发光二极管单元51相对应。Please refer to FIG. 7 together, a plurality of light emitting diode crystal grains 50 are provided, each light emitting diode grain 50 is arranged in a reflective cup 21, and is electrically connected to the first electrode 11 and the second electrode 12 corresponding thereto, each A reflective cup 21 , an LED chip 50 disposed in the reflective cup 21 , and a first electrode 11 and a second electrode 12 electrically connected to the LED chip 50 form an LED unit 51 . In this embodiment, the LED die 50 is disposed on the first electrode 11 and is electrically connected to the second electrode 12 through wires. Certainly, the LED crystal grain 50 can also be disposed on the second electrode 12 , or disposed on the portion of the cup shell 20 exposed to the bottom of the reflective cup 21 . In this embodiment, each hollow area 41 of the mask 40 corresponds to one LED unit 51 .
请一并参见图8,切割该杯壳20,以使该多个发光二极管单元51相互分开。具体地,在该杯壳20的远离该紫外光解胶膜30的一侧形成多个沟槽60,以使该多个反射杯21相互分开形成多个独立的发光二极管单元51,其中,该沟槽60的深度等于该杯壳20的厚度。在本实施例中,该多个沟槽60将该杯壳20分割开,以成间隔排布的发光二极管单元51以及残料单元61,其中,每残料单元61设置在两相邻的发光二极管单元51之间。Please also refer to FIG. 8 , the cup shell 20 is cut to separate the plurality of LED units 51 from each other. Specifically, a plurality of grooves 60 are formed on the side of the cup shell 20 away from the ultraviolet photolytic adhesive film 30, so that the plurality of reflective cups 21 are separated from each other to form a plurality of independent light-emitting diode units 51, wherein the The depth of the groove 60 is equal to the thickness of the cup shell 20 . In this embodiment, the plurality of grooves 60 divide the cup shell 20 to form light-emitting diode units 51 and residual material units 61 arranged at intervals, wherein each residual material unit 61 is arranged in two adjacent light-emitting diodes. Between the diode unit 51.
请一并参见图9,照射紫外光,该紫外光解胶膜30在紫外光的照射下失去粘性,从而该多个发光二极管单元51与该紫外光解胶膜30分离,从而形成多个发光二极管。具体地,该紫外光透过该光罩40的镂空区域41照射该紫外光解胶膜30,使该紫外光解胶膜30失去粘性,从而使该多个发光二极管单元51与该紫外光解胶膜30分离,进而形成多个发光二极管。Please refer to FIG. 9 together, irradiating ultraviolet light, the UV photolytic adhesive film 30 loses its viscosity under the irradiation of ultraviolet light, so that the plurality of light-emitting diode units 51 are separated from the ultraviolet photolytic adhesive film 30, thereby forming a plurality of light emitting diodes. diode. Specifically, the ultraviolet light passes through the hollow area 41 of the photomask 40 and irradiates the ultraviolet photolytic adhesive film 30, so that the ultraviolet photolytic adhesive film 30 loses its viscosity, so that the plurality of light emitting diode units 51 and the ultraviolet photolytic adhesive film are decomposed. The adhesive film 30 is separated to form a plurality of LEDs.
本发明的发光二极管制造方法中采用紫外光解胶膜30承载发光二极管单元51,并通过照射紫外光以使紫外光解胶膜30对应发光二极管单元51的部分失去粘性,从而形成多个发光二极管。同时,由于紫外光解胶膜30对应残料单元61的部分被光罩40的遮蔽区域42所遮挡而未经紫外光的照射,因此保有粘性,使残料单元61仍旧粘合于紫外光解胶膜30上。由此,可有效地将发光二极管单元51与残料单元61分开,大大提高了制造发光二极管的速度与良率。In the light emitting diode manufacturing method of the present invention, the ultraviolet photolytic adhesive film 30 is used to carry the light emitting diode unit 51, and the part of the ultraviolet photolytic adhesive film 30 corresponding to the light emitting diode unit 51 loses its viscosity by irradiating ultraviolet light, thereby forming a plurality of light emitting diodes . Simultaneously, since the part of the UV photolytic adhesive film 30 corresponding to the residual material unit 61 is blocked by the shielding area 42 of the photomask 40 without being irradiated by ultraviolet light, it remains viscous, so that the residual material unit 61 is still bonded to the UV photolytic solution. On the film 30. Thus, the LED unit 51 can be effectively separated from the residue unit 61 , which greatly improves the speed and yield of manufacturing the LED.
本发明第二实施例提供另一种发光二极管制造方法,其与第一实施例提供的发光二极管制造方法基本相同,不同之处在于:在步骤“提供一紫外光解胶膜30,其设置在该杯壳20的远离该反射杯21的一侧,该紫外光解胶膜30通过照射紫外线方式能失去粘性”后包括如下步骤:The second embodiment of the present invention provides another light-emitting diode manufacturing method, which is basically the same as the light-emitting diode manufacturing method provided in the first embodiment, except that: in the step "providing an ultraviolet photolytic adhesive film 30, it is arranged on On the side of the cup shell 20 away from the reflective cup 21, the ultraviolet photolytic adhesive film 30 can lose its viscosity by irradiating ultraviolet rays, and then include the following steps:
请一并参见图7,提供多个发光二极管晶粒50,每个发光二极管晶粒50设置在一个反射杯21内,并分别和与其对应的第一电极11以及第二电极12电连接,每个反射杯21、设置在该反射杯21内的发光二极管晶粒40、以及与该发光二极管晶粒50电连接的第一电极11与第二电极12形成一个发光二极管单元51。Please refer to FIG. 7 together, a plurality of light emitting diode crystal grains 50 are provided, each light emitting diode grain 50 is arranged in a reflective cup 21, and is electrically connected to the first electrode 11 and the second electrode 12 corresponding thereto, each A reflective cup 21 , an LED die 40 disposed in the reflective cup 21 , and a first electrode 11 and a second electrode 12 electrically connected to the LED die 50 form an LED unit 51 .
请一并参见图8,切割该杯壳20,以使该多个发光二极管单元51相互分开。具体地,在该杯壳20的远离该紫外光解胶膜30的一侧形成多个沟槽60,以使该多个反射杯21以及发光二极管晶粒50相互分开形成多个独立的发光二极管单元51,其中,该沟槽60的深度等于该杯壳20的厚度。在本实施例中,该多个沟槽60将该杯壳20分割开,以成间隔排布的发光二极管单元51以及残料单元61,其中,每残料单元61设置在两相邻的发光二极管单元51之间。Please also refer to FIG. 8 , the cup shell 20 is cut so that the plurality of LED units 51 are separated from each other. Specifically, a plurality of grooves 60 are formed on the side of the cup shell 20 away from the UV photolytic adhesive film 30, so that the plurality of reflective cups 21 and the LED crystal grains 50 are separated from each other to form a plurality of independent LEDs. Unit 51 , wherein the depth of the groove 60 is equal to the thickness of the cup shell 20 . In this embodiment, the plurality of grooves 60 divide the cup shell 20 to form light-emitting diode units 51 and residual material units 61 arranged at intervals, wherein each residual material unit 61 is arranged in two adjacent light-emitting diodes. Between the diode unit 51.
请一并参见图10,提供一个光罩70,该光罩70设置在与该紫外光解胶膜30相反的一侧,该光罩70包括多个间隔排布的镂空区域71以及遮蔽区域72。在本实施例中,该光罩70的每个镂空区域71与一个发光二极管单元51相对应。每个残料单元61则对应该光罩70的一个遮蔽区域72。在本实施例中,每个沟槽60对应该光罩70的遮蔽区域72。当然,每个沟槽60也可以对应该光罩70的镂空区域71。Please refer to FIG. 10 together. A photomask 70 is provided. The photomask 70 is arranged on the opposite side to the UV photolytic adhesive film 30. The photomask 70 includes a plurality of hollowed-out areas 71 and shielding areas 72 arranged at intervals. . In this embodiment, each hollow area 71 of the mask 70 corresponds to one LED unit 51 . Each residue unit 61 corresponds to a shielding area 72 of the mask 70 . In this embodiment, each groove 60 corresponds to the shielding area 72 of the mask 70 . Certainly, each groove 60 may also correspond to the hollow area 71 of the mask 70 .
对该紫外光解胶膜30照射紫外光,该紫外光解胶膜30在紫外光的照射下失去粘性,从而该多个发光二极管单元51与该紫外光解胶膜30分离,形成多个发光二极管。具体地,该紫外光照射该紫外光解胶膜30,以使该紫外光解胶膜30与该多个发光二极管单元51以及该多个残料单元61分离,同时透过该多个镂空区域71取出该多个发光二极管单元51。在本实施例中,可以通过吸附的方式从镂空区域71吸附发光二极管单元51,从而使发光二极管单元51与残料单元61分离,形成发光二极管。当然,也可以将该上述结构颠倒放置,从而使残料单元61承载在遮蔽区域72上,而发光二极管单元51透过镂空区域71与残料单元61分离。Irradiating ultraviolet light to the ultraviolet photolytic adhesive film 30, the ultraviolet photolytic adhesive film 30 loses its viscosity under the irradiation of ultraviolet light, so that the plurality of light-emitting diode units 51 are separated from the ultraviolet photolytic adhesive film 30 to form a plurality of light emitting diodes. diode. Specifically, the ultraviolet light irradiates the ultraviolet photolytic adhesive film 30, so that the ultraviolet photolytic adhesive film 30 is separated from the plurality of light emitting diode units 51 and the plurality of residual material units 61, and at the same time passes through the plurality of hollowed out regions. 71 to take out the plurality of LED units 51 . In this embodiment, the light emitting diode unit 51 can be absorbed from the hollow area 71 by adsorption, so that the light emitting diode unit 51 is separated from the residual material unit 61 to form a light emitting diode. Of course, the above structure can also be placed upside down, so that the residue unit 61 is carried on the shielding area 72 , and the LED unit 51 is separated from the residue unit 61 through the hollow area 71 .
可以理解的是,对于本领域的普通技术人员来说,可以根据本发明的技术构思做出其它各种像应的改变与变形,而所有这些改变与变形都应属于本发明权利要求的保护范围。It can be understood that, for those skilled in the art, various other corresponding changes and deformations can be made according to the technical concept of the present invention, and all these changes and deformations should belong to the protection scope of the claims of the present invention .
Claims (7)
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| CN201310185651.8A CN104167480B (en) | 2013-05-20 | 2013-05-20 | Method for manufacturing light-emitting diode |
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| CN1881561A (en) * | 2005-06-14 | 2006-12-20 | 探微科技股份有限公司 | Wafer Dicing Method |
| US20110256646A1 (en) * | 2010-04-16 | 2011-10-20 | Advanced Optoelectronic Technology, Inc. | Method for manufacturing led package and substrate thereof |
| CN102456603A (en) * | 2010-10-21 | 2012-05-16 | 富士电机株式会社 | Semiconductor device manufacturing method and manufacturing apparatus |
| CN103050583A (en) * | 2011-10-14 | 2013-04-17 | 展晶科技(深圳)有限公司 | Method for encapsulating light-emitting diode |
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| TWI590486B (en) * | 2009-07-21 | 2017-07-01 | 晶元光電股份有限公司 | Optoelectronic system |
| TWM446415U (en) * | 2012-07-20 | 2013-02-01 | Dow Corning Taiwan Inc | Lead frame combination |
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| CN1881561A (en) * | 2005-06-14 | 2006-12-20 | 探微科技股份有限公司 | Wafer Dicing Method |
| US20110256646A1 (en) * | 2010-04-16 | 2011-10-20 | Advanced Optoelectronic Technology, Inc. | Method for manufacturing led package and substrate thereof |
| CN102456603A (en) * | 2010-10-21 | 2012-05-16 | 富士电机株式会社 | Semiconductor device manufacturing method and manufacturing apparatus |
| CN103050583A (en) * | 2011-10-14 | 2013-04-17 | 展晶科技(深圳)有限公司 | Method for encapsulating light-emitting diode |
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