CN104183748A - Organic light emission diode, display screen and terminal - Google Patents
Organic light emission diode, display screen and terminal Download PDFInfo
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- CN104183748A CN104183748A CN201310192393.6A CN201310192393A CN104183748A CN 104183748 A CN104183748 A CN 104183748A CN 201310192393 A CN201310192393 A CN 201310192393A CN 104183748 A CN104183748 A CN 104183748A
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses an organic light emission diode, a display screen and a terminal. The organic light emission diode includes a substrate, an anode layer, an organic function layer and a cathode layer used as a light-emitting surface, which are sequentially laminated and combined. The organic function layer includes a light-emitting layer which emits light under the drive of an external power supply. The anode layer includes a metal reflection layer, a first interference layer, a transflective metal layer, a second interference layer and a second transflective layer, which are sequentially laminated and combined, wherein the metal reflection layer and the transmitting substrate are laminated and combined, the second transflective metal layer and the organic function layer are laminated and combined, and the material of the first interference layer and the second interference layer is a compound of metal lanthanum. The anode of the organic light emission diode effectively reduces a light reflectivity of the anode of the organic light emission diode and improves the contrast ratio thereof. The display screen which includes the organic light emission diode, and the terminal have high contrast ratios and clear display pictures.
Description
Technical field
The invention belongs to electric light source technology field, relate to specifically a kind of Organnic electroluminescent device, display screen and terminal thereof.
Background technology
Organic electroluminescence device (Organic Light Emission Diode, hereinafter to be referred as OLED) is a kind of current mode light emitting semiconductor device based on organic material.Its typical structure is that the luminous organic material of making one deck tens nanometer thickness on ito glass is made luminescent layer, and there is the metal electrode of one deck low work function luminescent layer top.
The principle of luminosity of OLED is based under the effect of extra electric field, and electronics is injected into organic lowest unocccupied molecular orbital (LUMO) from negative electrode, and hole is injected into organic highest occupied molecular orbital (HOMO) from anode.Electronics and hole meet at luminescent layer, compound, form exciton, exciton moves under electric field action, and energy is passed to luminescent material, and excitation electron is from ground state transition to excitation state, excited energy, by Radiation-induced deactivation, produces photon, discharges luminous energy.
The advantages such as OLED has that luminous efficiency is high, material range of choice is wide, driving voltage is low, entirely solidifies active illuminating, light, thin, have high definition, wide viewing angle, fast response time, low cost and the advantage such as bright in luster simultaneously, a kind of Display Technique and light source that has potentiality, meet the development trend that information age mobile communication and information show, and the requirement of green lighting technique, therefore, thought to be most likely at by insider the device of new generation that occupies dominance on following illumination and display device market.As a brand-new illumination and Display Technique, the ten years development in the past of OLED technology is swift and violent, has obtained huge achievement.Throw light on because the whole world is increasing and show that producer drops into research and development one after another, having promoted greatly the industrialization process of OLED, making the growth rate of OLED industry surprising, having arrived the eve of scale of mass production at present.
But the negative electrode of existing OLED device is generally the metallic cathode material that uses high reflectance, particularly, the metallic cathode of the high reflectance that the metallic cathode material of this high reflectance is prepared into has the reflectivity that exceedes 90% in visible ray section, therefore this high reflectance negative electrode like this brings obstruction but to the application of OLED on display device.This be because, as display device, high-contrast is the long-term pursuits of people, requirement to Display Contrast is higher, if when the application by the OLED device of existing high reflectance negative electrode on display device, under solar light irradiation, due to the high reflectance effect of its high reflectance negative electrode, make the contrast of display device low, the content of demonstration cannot be seen clearly.Therefore,, when OLED device is applied in display, the negative electrode reflectivity that how to reduce OLED device is technical barrier to be solved.
Summary of the invention
The object of the invention is to overcome the above-mentioned deficiency of prior art, provide a kind of anode to there is the Organnic electroluminescent device of antiradar reflectivity.
The display screen that provides a kind of contrast high is provided.
Another object of the present invention is to provide a kind of terminal that contains above-mentioned display screen.
In order to realize foregoing invention object, technical scheme of the present invention is as follows:
A kind of Organnic electroluminescent device, comprise the substrate that stacks gradually combination, anode layer, organic function layer and as the cathode layer of exiting surface, described organic function layer is included in luminescent layer luminous under the driving of additional power source, described anode layer comprises the metallic reflector that stacks gradually combination, the first interfering layer, the first semi-transparent metal level, the second interfering layer and the second semi-transparent metal level, wherein, the stacked combination of described metallic reflector and transparent substrates, described the second semi-transparent metal level and the stacked combination of organic function layer, and the compound that the material of described the first interfering layer and the second interfering layer is lanthanoid metal.
And a kind of display screen, comprises display module and for controlling the control module of display module, wherein said display module contains Organnic electroluminescent device described above.
And, a kind of terminal that is provided with display screen, the display screen of described terminal is the above-mentioned display that contains Organnic electroluminescent device.
Above-mentioned Organnic electroluminescent device is by being arranged to anode to stack gradually metallic reflector, the first interfering layer, the first semi-transparent metal level, the second interfering layer and the second semi-transparent metal-layer structure of combination, effectively reduce the anode of this Organnic electroluminescent device to reflection of light rate, improved its contrast.Wherein, two semi-transparent metal layer can to by from cathode layer end incident light the effect of semi-transflective reflective; Two interfering layers can not only make hole inject, and the more important thing is and can also make two semi-transparent metal layer reflection light and the catoptrical single spin-echo of metallic reflector, reach the effect that interference disappears mutually, have effectively reduced the total reflection of light, realize low reflectivity.
Above-mentioned display screen is owing to containing above-mentioned Organnic electroluminescent device, and therefore it has high-contrast, and its display frame is clear.Due to the display screen that is provided with the terminal of display screen and contains this high-contrast, therefore the display screen picture of this terminal is clear.
Brief description of the drawings
Fig. 1 is embodiment of the present invention Organnic electroluminescent device structural representation;
Fig. 2 is another preferred structure schematic diagram of embodiment of the present invention Organnic electroluminescent device;
Fig. 3 is embodiment of the present invention Organnic electroluminescent device preparation method's schematic flow sheet.
Embodiment
In order to make the technical problem to be solved in the present invention, technical scheme and beneficial effect clearer, below in conjunction with embodiment and accompanying drawing, the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.
Organic electroluminescent pixel contrast=(environmental light brightness of device luminosity (opening)+device reflection)/(environmental light brightness of device luminosity (pass)+device reflection), according to these computational methods, in the OLED of transparent anode device, one of method that improves contrast is exactly to reduce the light reflection of device to environment, namely reduces the reflectivity of reflecting electrode.
Based on above-mentioned theory, the embodiment of the present invention adopts the approach that reduces anode reflectivity to improve organic electroluminescent pixel contrast.Therefore, the Organnic electroluminescent device that the embodiment of the present invention provides a kind of anode to have antiradar reflectivity, its structure is as shown in Figure 1 to Figure 2.This Organnic electroluminescent device comprises the substrate 1, anode layer 2, organic function layer 3 and the cathode layer 4 that stack gradually combination.
Particularly, the material of aforesaid substrate 1 is glass, polymer thin-film material etc., as simple glass, polymer thin-film material substrate etc.Certainly, the material of substrate 1 also can adopt this area other materials to substitute.The thickness of substrate 1 also can adopt the conventional thickness in this area or select flexibly according to the requirement of application.
Above-mentioned anode layer 2 comprises the metallic reflector 21, the first interfering layer 22, the first semi-transparent metal level 23, the second interfering layer 24 and the second semi-transparent metal level 25 that stack gradually combination.The first semi-transparent metal level 23 in the anode layer 2 of this structure, the second semi-transparent metal level 25 can to by from cathode layer 4 end incident lights the effect of semi-transflective reflective, the first interfering layer 22 and the second interfering layer 24 can not only have good conductivity, can make hole inject, the more important thing is and can also make the first semi-transparent metal level 23, the second semi-transparent metal level 25 reverberation and catoptrical single spin-echo of metallic reflector 21, reach the effect that interference disappears mutually, effectively reduce the total reflection of light, realized low reflectivity.Particularly, enter from cathode terminal this structure of directive anode layer 2 light reflection and refraction as Fig. 1, shown in 2, ambient light a is during from outside incident, there is first reflection and refraction on the second semi-transparent metal level 25 surfaces, form reflection ray b, refracted ray c sees through the second interfering layer 24 and arrives the first semi-transparent metal level 23 surfaces, occur reflect for the second time and reflect, form reflection ray d, refracted ray e arrives metallic reflector 21 surfaces through the first interfering layer 22 and reflects, form reflection ray f, due to the effect of the first interfering layer 22 and the second interfering layer 24, make emission of light b, reflection ray d disappears mutually with the interference that reflection ray f forms light, slacken the reverberation that anode layer 2 produces, thereby effectively reduce the reflectivity of anode layer 2.
Wherein, this first semi-transparent metal level 23, the second semi-transparent metal level 25 can make the light that organic function layer 3 transmittings come that the reflection of part permeation parts occurs at its interface.For reflection and the transmitance of better light regulating, as preferred embodiment, the thickness of this first semi-transparent metal level 23 and/or the second semi-transparent metal level 25 is 5nm～10nm, in addition, the thickness of two semi-transparent metal levels can be the same or different, and its thickness can also be adjusted flexibly according to the difference of material.As another preferred embodiment, the material of above-mentioned the first semi-transparent metal level 23 and/or the second semi-transparent metal level 25 is at least one in Cr, Ag, Al, Au.Should be appreciated that, can do cathodic metal material and also belong to the framework of the present definition as long as can realize other thickness of this first semi-transparent metal level 23 and the second semi-transparent metal level 25 part permeation parts reflections and other.
Arranging of this first interfering layer 22, the second interfering layer 24 can make the first semi-transparent metal level 23, the second semi-transparent metal level 25 and the catoptrical single spin-echo of metallic reflector 21, reaches the effect that interference disappears mutually, effectively reduced the total reflection of light.And the first interfering layer 22, the second interfering layer 24 are as a part for anode 2, and therefore, this first interfering layer 22, the second interfering layer 24 materials not only must have light permeability, also must have hole injection, transmittability and conductivity.Therefore, the compound of this first interfering layer 22, the second interfering layer 24 material selection lanthanoid metals, select the compound of lanthanoid metal to make the first interfering layer 22, the second interfering layer 24 can not only effectively be given the photopermeability of the first interfering layer 22, the second interfering layer 24 excellences, the maximized metallic reflector 21 that is passed to of light seeing through from the first semi-transparent metal level 23, the second semi-transparent metal level 25 is also reflected, the effect offseting to improve the first semi-transparent metal level 23, the second semi-transparent metal level 25 and metallic reflector 21 reverberation.Meanwhile, electronic injection performance and the electric conductivity of effectively giving the first interfering layer 22, the second interfering layer 24 excellences be can also give, thereby luminous intensity and the high-contrast of embodiment of the present invention Organnic electroluminescent device excellence given.
As preferred embodiment, at least one in oxide that the compound of this lanthanoid metal is lanthanoid metal, fluoride, boride.In further preferred embodiment, the oxide of this lanthanoid metal is La
2o
3, the fluoride of lanthanoid metal is LaF
3, the boride of this lanthanoid metal is LaB
6.Wherein, the first interfering layer 22, the second interfering layer 24 materials can be the same or different, and set flexibly according to concrete need of production and practical application.
By regulating the thickness of the first interfering layer 22, the second interfering layer 24, can effectively improve the effect that the first semi-transparent metal level 23, the second semi-transparent metal level 25 and metallic reflector 21 reverberation offset.Therefore,, as preferred embodiment, the thickness of the first interfering layer 22, the second interfering layer 24 is 60nm～100nm.In the preferred embodiment, the thickness of two interfering layers can be the same or different.
In further preferred embodiment, the thickness of the first interfering layer 22 is 60nm～80nm, and the thickness of the second interfering layer 24 is 80nm～100nm, and the thickness of the first interfering layer 22 and the second interfering layer 24 in gradient.The thickness of two interfering layers is arranged to gradient, can multi-wavelength's light is produced and be interfered.(individual layer interfering layer can only produce maximum interference to one of them wavelength to compare individual layer interfering layer, the interference that other wavelength produce is not obvious), anode layer 2 in the preferred embodiment can produce the maximum interference of multiple wavelength, thereby can further reduce the reflectivity of anode layer 2.
The object that this metallic reflector 21 arranges is to reflect at its interface transmit the light coming from the first interfering layer 22, and the light that this reverberation reflection is occurred to the first semi-transparent metal level 23, the second semi-transparent metal level 25 interfaces after by the transmission of the first interfering layer 22, the second interfering layer 24 cancels each other, to reduce the reflectivity of anode layer 2.As preferred embodiment, the thickness of this metallic reflector 21 is 70nm～200nm.As another preferred embodiment, above-mentioned metallic reflector 21 metal materials are any one or more alloy in Ag, Al, Au, Pt.Should be appreciated that, can do anode metal material and also belong to the framework of the present definition as long as can realize other thickness of this metallic reflector 21 reflection action and other, as disregard cost, the thickness of this metallic reflector 21 can also be more than 200nm.
As another preferred embodiment of above-mentioned Organnic electroluminescent device, the thickness of above-mentioned metallic reflector 21 is 70nm～200nm, the first semi-transparent metal level 23 and the second semi-transparent metal level 25 thickness are 5nm～10nm, the thickness of the first interfering layer 22 is 60nm～80nm, the thickness of the second interfering layer 24 is 80nm～100nm, and the thickness of the first interfering layer 22 and the second interfering layer 24 in gradient.The combination of each layer thickness in the preferred embodiment, can make the first semi-transparent metal level 23, the second semi-transparent metal level 25 and the better effects if that metallic reflector 21 reverberation offset, and makes anode layer 2 have lower reflectivity.
As a preferred embodiment again of above-mentioned Organnic electroluminescent device, above-mentioned metallic reflector 21 materials are any one or more alloy in metal A g, Al, Au, Pt; The compound that the first interfering layer 22 and the second interfering layer 24 materials are lanthanoid metal, it is more excellent is at least one in the oxide, fluoride, boride of lanthanum; The first semi-transparent metal level 23 and/or the second semi-transparent metal level 25 materials are any one or more alloy in Cr, Ag, Al, Au.The combination of each layer of selected material in the preferred embodiment, gives reflectivity and the hole that anode layer 2 is lower and injects and transmission performance.
As the another preferred embodiment of above-mentioned Organnic electroluminescent device, the thickness of above-mentioned metallic reflector 21 is 70nm～200nm, and its material is any one or more alloy in metal A g, Al, Au, Pt; The first semi-transparent metal level 23 and the second semi-transparent metal level 25 thickness are 5nm～10nm, and the thickness of the first interfering layer 22 is 60nm～80nm, and its material is any one or more alloy in Cr, Ag, Al, Au; The thickness of the second interfering layer 24 is 80nm～100nm, and the thickness of the first interfering layer 22 and the second interfering layer 24 is in gradient, the compound of its lanthanoid metal, and it is more excellent is at least one in the oxide, fluoride, boride of lanthanum.The combination of each layer thickness and material in the preferred embodiment, injects and transmission performance reflectivity that anode layer 2 is lower and excellent hole.
Organic function layer 3 in above-mentioned Organnic electroluminescent device embodiment comprises the hole injection layer 31, hole transmission layer 32, luminescent layer 33, electron transfer layer 34, the electron injecting layer 35 that stack gradually combination, and the stacked combination in the relative surface of face that combines with substrate layer 1 of hole injection layer 31 and anode layer 2, electron injecting layer 35 and the stacked combination of cathode layer 4, as shown in Figure 1.
In specific embodiment, above-mentioned hole injection layer 31 materials can be ZnPc (Phthalocyanine Zinc), CuPc(CuPc), at least one in VOPc (ranadylic phthalocyanine), TiOPc (TiOPc).Certainly, these hole injection layer 31 materials can also be the conventional other materials in this area, as WO
3, VO
x, WO
xor MoO
3deng oxide, or the dopant mixture of inorganic hole injection layer material and organic hole implanted layer material.The thickness of hole injection layer 31 also can arrange according to the thickness of this area routine.The setting of this hole injection layer 31, can effectively strengthen the ohmic contact between itself and anode layer 2, has strengthened electric conductivity, improves the hole injectability of anode layer 2 ends.Just because of this, this hole injection layer 31 also can not arrange according to the actual needs, that is to say, hole transmission layer 32 can be directly and the direct stacked combination of anode layer 2.
Above-mentioned hole transmission layer 32 materials can be NPB (N, N '-diphenyl-N, N '-bis-(1-naphthyl)-1,1 '-biphenyl-4,4 '-diamines), TPD (N, N '-diphenyl-N, N '-bis-(3-aminomethyl phenyl)-1,1 '-biphenyl-4,4 '-diamines), MeO-TPD (N, N, N ', N '-tetramethoxy phenyl)-benzidine), MeO-Sprio-TPD(2, the two (N of 7-, N-bis-(4-methoxyphenyl) amino)-9,9-spiral shell two fluorenes) at least one.Certainly, these hole transmission layer 32 materials can also be the conventional other materials in this area, as 4,4 ', 4 ' '-tri-(N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine (m-MTDATA) etc.The thickness of hole transmission layer 32 also can arrange according to the thickness of this area routine.
Above-mentioned luminescent layer 33 materials can be guest materials and material of main part dopant mixture.Wherein, guest materials is luminescent material, it comprises 4-(dintrile methyl)-2-butyl-6-(1, 1, 7, 7-tetramethyl Lip river of a specified duration pyridine-9-vinyl)-4H-pyrans (DCJTB), two (4, 6-difluorophenyl pyridine-N, C2) pyridine formyl closes iridium (FIrpic), two (4, 6-difluorophenyl pyridine)-tetra-(1-pyrazolyl) boric acid closes iridium (FIr6), two (2-methyl-diphenyl [f, h] quinoxaline) (acetylacetone,2,4-pentanedione) close iridium (Ir (MDQ) 2 (acac)), three (1-phenyl-isoquinolin) close iridium (Ir (piq) 3), three (2-phenylpyridines) close at least one in iridium (Ir (ppy) 3), material of main part comprises 4,4 '-bis-(9-carbazole) biphenyl (CBP), oxine aluminium (Alq
3), 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi), N, N '-diphenyl-N, N '-bis-(1-naphthyl)-1,1 '-biphenyl-4, at least one in 4 '-diamines (NPB).Main, guest materials can carry out according to the needs of actual production and application compound flexibly, and the mass ratio of guest materials and material of main part can be 1～10:100.
In addition, these luminescent layer 33 materials can also be selected fluorescent material 4,4 '-bis-(2,2-diphenylethyllene)-1,1 '-biphenyl (DPVBi), 4,4 '-bis-[4-(di-p-tolyl amino) styryl] biphenyl (DPAVBi), 5,6, at least one in the materials such as 11,12-tetraphenyl naphthonaphthalene (Rubrene), dimethylquinacridone (DMQA).The thickness of this luminescent layer 33 also can arrange according to the thickness of this area routine.
Above-mentioned electron transfer layer 34 materials can be 2-(4-xenyl)-5-(the 4-tert-butyl group) phenyl-1,3,4-oxadiazole (PBD), (oxine)-aluminium (Alq
3), 4,7-diphenyl-o-phenanthroline (Bphen), 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi), 2,9-dimethyl-4,7-biphenyl-1,10-phenanthrolene (BCP), 1,2, in 4-triazole derivative (TAZ) at least one.Certainly, electron transfer layer 34 materials can also be other electron transport materials well known in the art, and its thickness also can adopt the conventional thickness in this area.
Above-mentioned electron injecting layer 35 materials can LiF, CsF, NaF, MgF
2deng at least one etc. alkali-metal halide, certainly, these electron injecting layer 35 materials can also be selected the alkali-metal halide such as at least one in lithium iodide, KI, sodium iodide, cesium iodide, rubidium iodide.The thickness of electron injecting layer 35 also can arrange according to the thickness of this area routine.The arranging of this electron injecting layer 35 can effectively strengthen the ohmic contact between itself and cathode layer 4, strengthen electric conductivity, further improve the electronic injection ability of cathode layer 4 ends, with further equilibrium carrier, control recombination region, in luminescent layer, increase exciton amount, obtained desirable luminosity and luminous efficiency.Just because of this, this electron injecting layer 35 also can not arrange according to the actual needs, that is to say, electron transfer layer 34 can be directly and the direct stacked combination of cathode layer 4.
In further preferred embodiment, on the basis of organic function layer 3 as shown in Figure 1, above-mentioned organic function layer 3 can also arrange electronic barrier layer 36 and hole blocking layer 37, as shown in Figure 2.Wherein, this electronic barrier layer 36 is stacked to be combined between hole transmission layer 32 and luminescent layer 33, and hole blocking layer 37 is stacked to be combined between luminescent layer 33 and electron transfer layer 34.Arranging of this electronic barrier layer 36 can stop the electronics that does not form exciton in luminescent layer 33 as much as possible and be trapped in luminescent layer 33, arranging of hole blocking layer 37 can stop the hole that does not form exciton in luminescent layer 33 as much as possible and be trapped in luminescent layer 33, to improve electronics and the hole meeting rate in luminescent layer 33, to improve both exciton amounts compound and that form, and exciton energy is passed to luminescent material, thereby the electronics of excitation light-emitting material is from ground state transition to excitation state, excited energy passes through Radiation-induced deactivation, produce photon, discharge luminous energy, to reach the object of the luminous intensity that strengthens luminescent layer 33.Certainly, this electronic barrier layer 36 and hole blocking layer 37 can according to the situation of actual production and application need to select a setting, the material that it is selected and thickness can arrange according to the conventional material in this area and conventional thickness.
Above-mentioned cathode layer 4 materials are any one or more alloy in Ag, Al, Sm, Yb, and its thickness is 18nm～35nm.This preferred cathode material and thickness have excellent light transmission rate, can effectively improve the light emission rate of this Organnic electroluminescent device, in addition, and this preferred cathode material electric conductivity excellence.Certainly, the material of this galactic pole layer 4 and thickness can also be other materials and the thickness of this area routine.
From the above, above-mentioned Organnic electroluminescent device is by being arranged to anode stack gradually metallic reflector 21, the first interfering layer 22, the first semi-transparent metal level 23, the second interfering layer 24 and second semi-transparent metal level 25 structures of combination, light reflection by anode layer 2 is offset, thereby effectively reduce the anode of this Organnic electroluminescent device to reflection of light rate, improved its contrast.In addition, by selecting material and the thickness of metallic reflector 21, the first interfering layer 22, the first semi-transparent metal level 23, the second interfering layer 24 and the second semi-transparent metal level 25, particularly the thickness of two interfering layers is arranged to gradient, can multi-wavelength's light be produced and be interfered like this, can further reduce the negative electrode of above-mentioned Organnic electroluminescent device to reflection of light rate, improve its contrast.
Correspondingly, so above-described embodiment Organnic electroluminescent device preparation method can be according to showing as Fig. 3.Technological process preparation, simultaneously referring to Fig. 1～2, its preparation method comprises the steps:
S01., substrate 1 is provided;
S02. prepare anode layer 2: in vacuum systems, metallic reflection layer material, the first interfering layer material, the first semi-transparent metal layer material, the second interfering layer material and the second semi-transparent metal layer material successively evaporation are stacked gradually to metallic reflector 21, the first interfering layer 22, the first semi-transparent metal level 23, the second interfering layer 24 and the second semi-transparent metal level 25 of combination in the substrate 1 one surface preparations of step S01;
S03. prepare organic function layer 3: prepare anode layer 2 at step S02 with light-transmissive substrates layer 1 relative surface evaporation hole injection layer material, hole transport layer material, luminescent layer material, electric transmission layer material and the electronic injection layer material successively of face that combine, prepare respectively hole injection layer 31, hole transmission layer 32, luminescent layer 33, electron transfer layer 34, electron injecting layer 35, form organic function layer 3;
S04. prepare cathode layer 4: in vacuum coating system, at organic function layer 3 outer surface cathode materials, form cathode layer 4.
Particularly, in above-mentioned S01 step, structure, material and the specification of substrate 1 as described above, for length, do not repeat them here.In addition, in this S01 step, also comprise the treatment step in early stage to substrate 1, as cleaned the step of decontamination, the step of specifically cleaning decontamination is as the step 1 of embodiment 1 below.
In above-mentioned steps S02, the material that evaporation metal reflector 21, the first interfering layer 22, the first semi-transparent metal level 23, the second interfering layer 24 and the second semi-transparent metal level 25 are selected and even thickness are as described above.The operating pressure that each layer of involved process conditions of evaporation are preferably vacuum moulding machine film forming is 1 × 10
-5～1 × 10
-3pa, the evaporation rate of organic material is 0.01～1nm/s.
In above-mentioned steps S03, the material that evaporation hole injection layer 31, hole transmission layer 32, luminescent layer 33, electron transfer layer 34, electron injecting layer 35 are selected and even thickness are as described above.The operating pressure that each layer of involved process conditions of evaporation are preferably vacuum moulding machine film forming is 1 × 10
-5～1 × 10
-3pa, the evaporation rate of organic material is 0.01～1nm/s.
When organic function layer 3 as described above, it comprises the hole injection layer 31 that stacks gradually combination, hole transmission layer 32, electronic barrier layer 36, luminescent layer 33, hole blocking layer 37, electron transfer layer 34, when electron injecting layer 35, or it comprises the hole transmission layer 32 that stacks gradually combination, electronic barrier layer 36, luminescent layer 33, hole blocking layer 37, when electron transfer layer 34, or it comprises the hole transmission layer 32 that stacks gradually combination, luminescent layer 33, when electron transfer layer 34, the method of preparing organic function layer 3 is in this each layer of structure of anode layer 2 outer surfaces successively evaporation.
In above-mentioned steps S04, the thickness of the cathode material that evaporation cathode layer 4 is used and the cathode layer 4 preparing all as described above, does not repeat them here.Its evaporation condition adopts the process conditions of this area routine, and as the evaporation rate of metal is preferably 0.2～2nm/s, the operating pressure of vacuum moulding machine film forming is 1 × 10
-5～1 × 10
-3pa.
Certainly, it is also understood that about the preparation method of embodiment of the present invention Organnic electroluminescent device and also should comprise the method for packing that this Organnic electroluminescent device is follow-up.
Correspondingly, the embodiment of the present invention also provides a kind of display screen, and it comprises display module and for controlling the control module of display module, certainly also comprises other necessary modules of application and display screen.Wherein, this display module comprises Organnic electroluminescent device described above, and particularly, in display module, Organnic electroluminescent device mentioned above is arranged according to matrix.Because this display screen contains above-mentioned Organnic electroluminescent device, therefore it has high-contrast, and its display frame is clear.
Correspondingly, the embodiment of the present invention further provides a kind of terminal that is provided with display screen, and the display screen of this terminal is the above-mentioned display that contains Organnic electroluminescent device.Certainly, should be appreciated that, according to the type difference of this terminal, this terminal, except containing display screen mentioned above, also contains other necessary modules or/and device.Therefore, this terminal can be non-portable terminal and portable terminal.Non-portable terminal can be that large-scale household electrical appliances (as television set, desktop computer display, be provided with air-conditioning, the washing machine etc. of display screen), factory are provided with lathe of display screen etc.; Portable terminal can be mobile phone, panel computer, notebook, personal digital assistant, game machine and e-book etc.Like this, because the display screen of this terminal is the above-mentioned display screen that contains Organnic electroluminescent device, therefore the display screen contrast of electronic device is high, and picture is clear.
Certainly, Organnic electroluminescent device mentioned above can also be applied in characteristic lighting field, as applied in the lighting field that reflectivity is low requiring.
Illustrate above-mentioned Organnic electroluminescent device aspect by multiple embodiment below.
Embodiment 1
That anode has an antiradar reflectivity and negative electrode is as an Organnic electroluminescent device for exiting surface, and its structure is: glass substrate/Au (70nm)/LaF
3(60nm)/Cr (7nm)/LaF
3(100nm)/Cr (10nm)/hole injection layer (CuPc, 10nm)/hole transmission layer (NPB, 30nm)/luminescent layer (DPVBi, 10nm)/electron transfer layer (TPBi, 30nm)/electron injecting layer (LiF, 0.5nm)/Ag (20nm).Wherein, Au (70nm)/LaF
3(60nm)/Cr (7nm)/LaF
3(100nm)/Cr (10nm) forms anode.
Its preparation method is as follows:
(1) be 10 in vacuum degree
-4in the vacuum coating system of Pa, prepare, glass substrate is cleaned with cleaning agent, then use distilled water, acetone is ultrasonic cleaning successively, then in coating system;
(2) evaporation metal Au layer, LaF successively on substrate
3layer, Cr layer, LaF
3layer, Cr layer, form anode, Au layer, LaF
3layer, Cr layer, LaF
3layer, Cr layer thickness are followed successively by 70nm, 60nm, 7nm, 100nm, 10nm;
(3) prepare luminescence unit at anode surface and be followed successively by hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, forms organic function layer, material is followed successively by CuPc, NPB, DPVBi, TPBi, LiF, and thickness is followed successively by 10nm, 30nm, 10nm, 30nm, 0.5nm;
(4) prepare Ag layer at organic function layer outer surface and form negative electrode; Thickness is 20nm;
(5), after preparation, adopt glass cover-plate to encapsulate.
Embodiment 2
That anode has an antiradar reflectivity and negative electrode is as an Organnic electroluminescent device for exiting surface, and its structure is: glass substrate/Ag (100nm)/LaB
6(70nm)/Au (5nm)/LaB
6(90nm)/Au (7nm)/hole injection layer (ZnPc, 15nm)/hole transmission layer (TPD, 30nm)/luminescent layer (Ir (ppy)
3: TPBi (10%), 10nm)/electron transfer layer (Bphen, 40nm)/electron injecting layer (CsF, 1nm)/Al (18nm).Wherein, Ag (100nm)/LaB
6(70nm)/Au (5nm)/LaB
6(90nm)/Au (7nm) forms anode.
This Organnic electroluminescent device preparation method is with reference to the Organnic electroluminescent device preparation method of embodiment 1.
Embodiment 3
That anode has an antiradar reflectivity and negative electrode is as an Organnic electroluminescent device for exiting surface, and its structure is: glass substrate/Al (200nm)/La
2o
3(80nm)/Al (10nm)/La
2o
3(100nm)/Al (7nm)/hole injection layer (TiOPc, 20nm)/hole transmission layer (MeO-Sprio-TPD, 40nm)/luminescent layer (DCJTB:Alq
3(1%), 15nm)/electron transfer layer (PBD, 50nm)/electron injecting layer (NaF, 0.8nm)/Sm (35nm).Wherein, Al (200nm)/La
2o
3(80nm)/Al (10nm)/La
2o
3(100nm)/Al (7nm) forms anode.
This Organnic electroluminescent device preparation method is with reference to the Organnic electroluminescent device preparation method of embodiment 1.
Embodiment 4
That anode has an antiradar reflectivity and negative electrode is as an Organnic electroluminescent device for exiting surface, and its structure is: glass substrate/Al (200nm)/La
2o
3(70nm)/Ag (10nm)/LaF
3(100nm)/Al (7nm)/hole injection layer (VOPc, 15nm)/hole transmission layer (MeO-TPD, 35nm)/luminescent layer (Ir (piq) 3:NPB (10%), 12nm)/electron transfer layer (PBD, 40nm)/electron injecting layer (MgF
2, 0.5nm) and/Yb (30nm).Wherein, Al (200nm)/La
2o
3(70nm)/Ag (10nm)/LaF
3(100nm)/Al (7nm) forms anode.
This Organnic electroluminescent device preparation method is with reference to the Organnic electroluminescent device preparation method of embodiment 1.
Comparison example 1
A kind of negative electrode is as the Organnic electroluminescent device of exiting surface, its structure is: glass substrate/Ag (100nm)/hole injection layer (CuPc, 10nm)/hole transmission layer (NPB, 30nm)/luminescent layer (DPVBi, 10nm)/electron transfer layer (TPBi, 30nm)/electron injecting layer (LiF, 0.5nm)/Ag (20nm).Wherein, Au (70nm)/LaF
3(60nm)/Cr (7nm)/LaF
3(100nm)/Cr (10nm) forms anode.
Organnic electroluminescent device carries out correlated performance test
When the Organnic electroluminescent device of existing anode construction is not lighted in Organnic electroluminescent device prepared by above-described embodiment 1 to embodiment 4 and comparison example 1, carry out reflectance test, test result is as following table 1.
Table 1
From above-mentioned table 1, the Organnic electroluminescent device of preparing in above-described embodiment 1-4 is owing to adopting metallic reflector, the first interfering layer, the first semi-transparent metal level, the second interfering layer and the second semi-transparent metal-layer structure to form black anode, by the synergy of each layer, make the first semi-transparent metal level, the second semi-transparent metal level and the catoptrical single spin-echo of metallic reflector, reach the effect that interference disappears mutually, effectively reduce the total reflection of light, realized low reflectivity.Particularly the thickness of two interfering layers is arranged to gradient, can multi-wavelength's light is produced and be interfered like this, can further reduce the negative electrode of above-mentioned Organnic electroluminescent device to reflection of light rate, improved its contrast.The reflectivity of Organnic electroluminescent device prepared by embodiment 1-4 is compared with Organnic electroluminescent device in comparison example 1, the reflectivity of Organnic electroluminescent device prepared by embodiment 1-4 is reduced to 10.4%, well below the reflectivity 80.5% of Organnic electroluminescent device in comparison example 1.Hence one can see that, and Organnic electroluminescent device prepared by embodiment 1-4 is during as display screen, and its contrast is the contrast when Organnic electroluminescent device is as display screen in comparison example 1 far away.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. an Organnic electroluminescent device, comprise the substrate that stacks gradually combination, anode layer, organic function layer and as the cathode layer of exiting surface, described organic function layer is included in luminescent layer luminous under the driving of additional power source, it is characterized in that: described anode layer comprises the metallic reflector that stacks gradually combination, the first interfering layer, the first semi-transparent metal level, the second interfering layer and the second semi-transparent metal level, wherein, the stacked combination of described metallic reflector and transparent substrates, described the second semi-transparent metal level and the stacked combination of organic function layer, and the compound that the material of described the first interfering layer and the second interfering layer is lanthanoid metal.
2. Organnic electroluminescent device as claimed in claim 1, is characterized in that: at least one in oxide that the compound of described lanthanoid metal is lanthanum, fluoride, boride.
3. Organnic electroluminescent device as claimed in claim 1 or 2, is characterized in that: the thickness of described the first interfering layer is 60nm～80nm, and the thickness of the second interfering layer is 80nm～100nm, and the thickness of the first interfering layer and the second interfering layer in gradient.
4. Organnic electroluminescent device as claimed in claim 1, is characterized in that: described metallic reflection layer thickness is 70nm～200nm.
5. the Organnic electroluminescent device as described in claim 1 or 4, is characterized in that: described metallic reflection layer material is any one or more alloy in metal A g, Al, Au, Pt.
6. Organnic electroluminescent device as claimed in claim 1, is characterized in that: described the first semi-transparent metal level and/or the second semi-transparent metal layer thickness are 5nm～10nm.
7. the Organnic electroluminescent device as described in claim 1 or 6, is characterized in that: described the first semi-transparent metal level and/or the second semi-transparent metal layer material are any one or more alloy in Cr, Ag, Al, Au.
8. Organnic electroluminescent device as claimed in claim 1 or 2, is characterized in that: the thickness of described the first interfering layer is 60nm～80nm, and the thickness of the second interfering layer is 80nm～100nm, and the thickness of the first interfering layer and the second interfering layer in gradient;
Described transparent metal reflector thickness is 70nm～200nm;
Described the first semi-transparent metal level and/or the second semi-transparent metal layer thickness are 5nm～10nm.
9. a display screen, comprises display module and for controlling the control module of display module, it is characterized in that: described display module contains just like the Organnic electroluminescent device described in claim 1～8 any one.
10. be provided with a terminal for display screen, the display screen of described terminal is display screen as claimed in claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310192393.6A CN104183748A (en) | 2013-05-22 | 2013-05-22 | Organic light emission diode, display screen and terminal |
Applications Claiming Priority (1)
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| CN1369116A (en) * | 1999-07-27 | 2002-09-11 | 吕克塞尔技术公司 | Organic electroluminescent device |
| US20040124432A1 (en) * | 2002-12-25 | 2004-07-01 | Au Optronics Corp. | Organic light-emitting diode devices having reduced ambient-light reflection and method of making the same |
| US20040245917A1 (en) * | 2003-04-23 | 2004-12-09 | Zheng-Hong Lu | Light-emitting devices with an embedded charge injection electrode |
| CN1728898A (en) * | 2005-07-21 | 2006-02-01 | 徐良衡 | Electroluminescent display of organic macromolecule, and preparation method |
| CN102414749A (en) * | 2009-02-27 | 2012-04-11 | 布莱阿姆青年大学 | Optical data storage medium comprising substantially inert low melting temperature data layer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1369116A (en) * | 1999-07-27 | 2002-09-11 | 吕克塞尔技术公司 | Organic electroluminescent device |
| US20040124432A1 (en) * | 2002-12-25 | 2004-07-01 | Au Optronics Corp. | Organic light-emitting diode devices having reduced ambient-light reflection and method of making the same |
| US20040245917A1 (en) * | 2003-04-23 | 2004-12-09 | Zheng-Hong Lu | Light-emitting devices with an embedded charge injection electrode |
| CN1728898A (en) * | 2005-07-21 | 2006-02-01 | 徐良衡 | Electroluminescent display of organic macromolecule, and preparation method |
| CN102414749A (en) * | 2009-02-27 | 2012-04-11 | 布莱阿姆青年大学 | Optical data storage medium comprising substantially inert low melting temperature data layer |
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Application publication date: 20141203 |