CN104198066A - Temperature sensor circuit based on reference source - Google Patents
Temperature sensor circuit based on reference source Download PDFInfo
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- CN104198066A CN104198066A CN201410373289.1A CN201410373289A CN104198066A CN 104198066 A CN104198066 A CN 104198066A CN 201410373289 A CN201410373289 A CN 201410373289A CN 104198066 A CN104198066 A CN 104198066A
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- temperature sensor
- voltage
- reference source
- resistor
- temperature
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- 239000003990 capacitor Substances 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 230000001737 promoting effect Effects 0.000 claims description 2
- 238000012544 monitoring process Methods 0.000 abstract description 10
- 238000010586 diagram Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
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Abstract
The invention discloses a temperature sensor circuit based on a reference source. The temperature sensor circuit comprises a reference source module for converting an input voltage into a PTAT (Proportional To Absolute Temperature) voltage which is in direct proportion to an absolute temperature, and providing the PTAT voltage for a temperature sensor module, and the temperature sensor module which is connected with the reference source module, and is used for converting a temperature signal into an analog voltage signal. According to the linear relation between the heat voltage and the temperature of the reference source, the temperature sensor is designed by generating the PTAT voltage through the reference source. The monitoring of the temperature by a circuit system is more accurate, and the problem of the influence of a high-order temperature influence coefficient of the temperature sensor designed by using the temperature coefficient of a resistor on the temperature sensor module is solved.
Description
Technical field
The present invention relates to a kind of circuit structure, relate in particular to a kind of temperature sensor circuit based on reference source.
Background technology
Along with the continuous progress of society, the continuous birth of various exact instrument makes also to improve for the requirement of accuracy of detection thereupon, especially for the monitoring of the temperature of whole Circuits System, because it concerns normal operation and the precise monitoring of whole Circuits System.In order to improve the stability of whole Circuits System temperature and monitoring temperature in Circuits System, circuit designers can be considered design temperature sensor assembly in Circuits System, be made with like this two benefits, one, to utilize the method for external temperature compensation to improve the stability of whole Circuits System temperature, its two, thereby temperature signal is converted to electric signal by temperature sensor module, realizes the temperature of Circuits System monitored.
Thereby general most employing second way is converted to electric signal realization by temperature signal the temperature of Circuits System is monitored.In tradition, temperature signal being converted to electric signal mode comprises: utilize the temperature coefficient of resistance, temperature variation causes resistance value to change, thereby electric signal is changed; Utilize the temperature coefficient of metal-oxide-semiconductor threshold voltage.These two kinds of methods can realize the monitoring to temperature in Circuits System, but the former is due to the existence of high-order temperature influence coefficient, and make the linearity of temperature sensor low, thereby the precision of monitoring is lower.Although the latter's precision increases, the relation that metal-oxide-semiconductor obtains threshold voltage and technique is larger, makes the consistance of whole temperature sensor circuit poor, thereby causes whole structure not good.
Summary of the invention
Technical matters to be solved by this invention be to provide a kind of simple in structure, cost is low, monitoring accuracy is high, the temperature sensor circuit of high conformity.
In order to solve above technical matters, a kind of temperature sensor circuit based on reference source of the present invention, is characterized in that, comprising: reference source module, by the PTAT voltage that input voltage conversion generates to degree temperature is directly proportional absolutely, and offers temperature sensor module; Temperature sensor module, connects described reference source module, and temperature signal is converted into analog voltage signal.
Preferably, described temperature sensor module is Voltage Series negative-feedback circuit.
Preferably, described temperature sensor module is in-phase proportion computing circuit.
Preferably, described in-phase proportion computing circuit comprises operational amplifier A 2, resistor R7, resistor R8, PTAT voltage enters described operational amplifier A 2 positive inputs, described operational amplifier A 2 reverse input ends are connected with one end of described resistor R7 and one end of described resistor R8, the other end of described resistor R7 is connected with the output terminal of described operational amplifier A 2, and the other end of described resistor R8 is connected to ground.
Preferably, described reference source module comprises and also comprises reference voltage output end.
Preferably, described reference source module comprises Brokaw bandgap voltage reference.
Preferably, described Brokaw bandgap voltage reference comprises resistor R1, and its one end is connected with supply voltage Vin, and the other end is connected with the positive input of operational amplifier A 1 and the collector of bipolar transistor Q1; Resistor R2, its one end is connected with supply voltage Vin, and the other end is connected with the reverse input end of operational amplifier A 1 and the collector of bipolar transistor Q2; The emitter of bipolar transistor Q1 is connected with node a, and the emitter of bipolar transistor Q2 is connected with node a by resistor R3; Resistor R4 one end is connected with node a, and the other end is connected to the ground; The base stage of bipolar transistor Q1, Q2 is connected.
Preferably, described Brokaw bandgap voltage reference also comprises for promoting the bleeder circuit of reference voltage.
Preferably, described bleeder circuit comprises resistor R5, R6, and described resistor R5, R6 are connected with the base stage of bipolar transistor Q1, Q2 simultaneously, the output terminal of the other end of resistor R5 and operational amplifier A 1, the other end ground connection of resistor R6.
Preferably, described Brokaw bandgap voltage reference also comprises for improving the compensation condenser CL of reference voltage output stability, one end of capacitor CL and reference voltage output end V
refbe connected, the other end ground connection of capacitor CL.
Utilize the linear relation of reference source thermal voltage and temperature, the mode that adopts reference source to produce PTAT (being directly proportional to absolute temperature) voltage is carried out design temperature sensor.Make Circuits System more accurate for the monitoring of temperature, removed the impact of high-order temperature influence coefficient on temperature sensor module.
Meanwhile, reference source adopts Brokaw bandgap voltage reference, and the PTAT voltage that reference source is produced only obtains PN junction pressure drop V with two transistors
bErelevant, generally, V
bEby transistorized emitter junction, provided, and itself and supply voltage are almost irrelevant, so the PTAT voltage and the independent of power voltage that obtain thus, PTAT voltage can produce extraordinary linear relationship with temperature thus, and this PTAT voltage is also used for designing high-precision reference source circuit simultaneously, therefore can be used for realizing high linearity and high-precision temperature sensor.
This reference source circuit adopts the structure of Brokaw unit, and the advantage of Brokaw unit is: Bandgap structure, circuit high conformity; Low temperature drift; Can suppress the impact that in circuit, non-ideal factor is exported for circuit.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail:
Fig. 1 is the circuit diagram of embodiment that the present invention is based on the temperature sensor circuit of reference source;
Fig. 2 the present invention is based on the block diagram that the circuit of embodiment of the temperature sensor circuit of reference source is applied in mode circuit system;
Fig. 3 the present invention is based on the block diagram that the circuit of embodiment of the temperature sensor circuit of reference source is applied in digital circuitry;
Fig. 4 the present invention is based on the block diagram of applying in the breadboardin digital hybrid circuit system of embodiment of temperature sensor circuit of reference source.
Embodiment
Embodiment:
A kind of temperature sensor circuit based on reference source of the present invention, comprise: reference source module, by the PTAT voltage that input voltage conversion generates to degree temperature is directly proportional absolutely, temperature sensor module, connect described reference source module, and temperature signal is converted into analog voltage signal.
As shown in Figure 1, reference source module 1 comprises PTAT Voltage-output node a, and reference voltage V
refoutput terminal, wherein the output node a of PTAT voltage connects temperature sensor module 2.In the present embodiment, described temperature sensor module 2 is an in-phase proportion computing circuit, described in-phase proportion computing circuit comprises operational amplifier A 2, resistor R7, resistor R8, PTAT voltage enters described operational amplifier A 2 positive inputs, described operational amplifier A 2 reverse input ends are connected with one end of described resistor R7 and one end of described resistor R8, the other end of described resistor R7 is connected with the output terminal of described operational amplifier A 2, and the other end of described resistor R8 is connected to ground.
According to the characteristic of in-phase proportion computing circuit, the clean input voltage of operational amplifier A 2 is zero, and clean input current is zero, therefore, and V
tsen=(1+R7/R8) V
a, V wherein
abe the voltage that node a goes out, and the thermal voltage PTAT that provides of reference source.Hence one can see that, and the voltage of temperature sensor module output depends on V
a, resistor R7 and resistor R8 relation.
As shown in Figure 1, described reference source module 2 comprises Brokaw bandgap voltage reference.The described Brokaw bandgap voltage reference that comprises, resistor R1, its one end is connected with supply voltage Vin, and the other end is connected with the positive input of operational amplifier A 1 and the collector of bipolar transistor Q1; Resistor R2, its one end is connected with supply voltage Vin, and the other end is connected with the reverse input end of operational amplifier A 1 and the collector of bipolar transistor Q2; The emitter of bipolar transistor Q1 is connected with node a, and the emitter of bipolar transistor Q2 is connected with node a by resistor R3; Resistor R4 one end is connected with node a, and the other end is connected to the ground; The base stage of bipolar transistor Q1, Q2 is connected, and is connected with one end of resistor R5, resistor R6; One end of the output terminal of the other end of resistor R5 and operational amplifier A 1, capacitor CL and reference voltage output end V
refbe connected; The other end ground connection of resistor R6, the other end ground connection of capacitor CL.
Bandgap voltage reference is that the voltage difference by the voltage being directly proportional to absolute temperature and two transistorized base-emitters is added the DC voltage obtaining, and Brokaw structure refers to that its operational amplifier has adopted differential configuration, the voltage thus with large gain and little imbalance, makes operational amplifier weaken the impact of benchmark core circuit.That is: V
ref=V
bE+ KV
a.Generally, V
bEv is provided by transistorized emitter junction
aby two transistors, obtain PN junction pressure drop V
bEdifference provide, above formula, to temperature differentiate, by selecting suitable k value, can be obtained at a certain temperature, the temperature coefficient of circuit is zero, thus, obtains to such an extent that reference voltage and thermal voltage all have nothing to do with power input voltage and temperature coefficient.
Because reference voltage and input voltage are irrelevant, generally, the reference voltage of reference voltage source output is all lower, the present embodiment has provided and has utilized the relation of dividing potential drop to promote reference voltage value, certainly, if in the situation that in Circuits System, needed reference voltage value is not high, also this circuit can be set, can certainly utilize alternate manner to promote reference voltage output valve.Building-out capacitor is also according to the output of reference voltage is required to determine.
The resistor providing in the present embodiment, transistor and capacitor refer to after equivalence, can be single components and parts, can be also the also tandem compounds of a plurality of devices.
Temperature temperature sensor circuit that must be based on reference source in the present embodiment, can show temperature by analog voltage amount, both can Real-Time Monitoring chip internal temperature, also can utilize the output voltage of this temperature sensor system to be carried out to temperature compensation, the stability with raising system to temperature variation.Also can be used as reference source circuit simultaneously and use, for Circuits System provides the reference voltage of high precision, Low Drift Temperature.In needing the simulation system of temperature compensation, as shown in Figure 2, use reference source output V of the present invention
refas operational amplifier in system in analog, can reduce the impact of temperature variation on operational amplifier output signal.For the part that cannot carry out internal temperature compensation, by system output voltage V o and temperature sensor output V
tsenbe connected to an adder Module and carry out temperature compensation, can obtain the output voltage V o1 that temperature coefficient is little.In needing the digital display circuit of temperature compensation, as shown in Figure 3, by analog-digital converter, temperature sensor is exported to V
tsenconvert digital signal D to
tsen, then by digital signal Do and D
tsenbe connected to temperature compensation computing module and carry out temperature compensation, can obtain the digital signal Dout that temperature coefficient is little.In like manner, the present invention also can realize temperature compensation function in analog-digital hybrid system, as shown in Figure 4.Wherein, Do refers to be subject to the numeral that influence of temperature change is larger to export, and Dout refers to exported by the numeral that influence of temperature change is very little after computing compensation.
Utilize the linear relation of reference source thermal voltage and temperature, the mode that adopts reference source to produce PTAT (being directly proportional to absolute temperature) voltage is carried out design temperature sensor.Make Circuits System more accurate for the monitoring of temperature, the affect problem of the high-order temperature influence coefficient of temperature sensor that has solved the temperature coefficient design that utilizes resistance on temperature sensor module.
Meanwhile, reference source adopts Brokaw bandgap voltage reference, and the PTAT voltage that reference source is produced only obtains PN junction pressure drop V with two transistors
bErelevant, generally, V
bEby transistorized emitter junction, provided, and itself and supply voltage are almost irrelevant, so the PTAT voltage and the independent of power voltage that obtain thus, PTAT voltage can produce extraordinary linear relationship with temperature thus, and this PTAT voltage is also used for designing high-precision reference source circuit simultaneously, therefore can be used for realizing high linearity and high-precision temperature sensor.
This reference source circuit adopts the structure of Brokaw unit, and the advantage of Brokaw unit is: Bandgap structure, circuit high conformity; Low temperature drift; Can suppress the impact that in circuit, non-ideal factor is exported for circuit.
It is emphasized that protection scope of the present invention is including but not limited to above-mentioned embodiment.It should be pointed out that for a person skilled in the art, under the premise without departing from the principles of the invention, can also make some distortion and improvement, these also should be regarded as belonging to protection scope of the present invention.
Claims (10)
1. the temperature sensor circuit based on reference source, is characterized in that, comprising:
Reference source module, by the PTAT voltage that input voltage conversion generates to degree temperature is directly proportional absolutely, and offers temperature sensor module;
Temperature sensor module, connects described reference source module, and temperature signal is converted into analog voltage signal.
2. the temperature sensor circuit based on reference source according to claim 1, is characterized in that, described temperature sensor module is Voltage Series negative-feedback circuit.
3. the temperature sensor circuit based on reference source according to claim 2, is characterized in that, described temperature sensor module is in-phase proportion computing circuit.
4. the temperature sensor circuit based on reference source according to claim 3, it is characterized in that, described in-phase proportion computing circuit comprises operational amplifier A 2, resistor R7, resistor R8, PTAT voltage enters described operational amplifier A 2 positive inputs, described operational amplifier A 2 reverse input ends are connected with one end of described resistor R7 and one end of described resistor R8, the other end of described resistor R7 is connected with the output terminal of described operational amplifier A 2, and the other end of described resistor R8 is connected to ground.
5. the temperature sensor circuit based on reference source according to claim 1, is characterized in that, described reference source module comprises and also comprises reference voltage output end.
6. the temperature sensor circuit based on reference source according to claim 5, is characterized in that, described reference source module comprises Brokaw bandgap voltage reference.
7. the temperature sensor circuit based on reference source according to claim 6, it is characterized in that, described Brokaw bandgap voltage reference comprises resistor R1, its one end is connected with supply voltage Vin, and the other end is connected with the positive input of operational amplifier A 1 and the collector of bipolar transistor Q1; Resistor R2, its one end is connected with supply voltage Vin, and the other end is connected with the reverse input end of operational amplifier A 1 and the collector of bipolar transistor Q2; The emitter of bipolar transistor Q1 is connected with node a, and the emitter of bipolar transistor Q2 is connected with node a by resistor R3; Resistor R4 one end is connected with node a, and the other end is connected to the ground; The base stage of bipolar transistor Q1, Q2 is connected.
8. the temperature sensor circuit based on reference source according to claim 7, is characterized in that, described Brokaw bandgap voltage reference also comprises for promoting the bleeder circuit of reference voltage.
9. the temperature sensor circuit based on reference source according to claim 8, it is characterized in that, described bleeder circuit comprises resistor R5, R6, described resistor R5, R6 are connected with the base stage of bipolar transistor Q1, Q2 simultaneously, the output terminal of the other end of resistor R5 and operational amplifier A 1, the other end ground connection of resistor R6.
10. the temperature sensor circuit based on reference source according to claim 7, it is characterized in that, described Brokaw bandgap voltage reference also comprises for improving the compensation condenser CL of reference voltage output stability, one end of capacitor CL and reference voltage output end V
refbe connected, the other end ground connection of capacitor CL.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410373289.1A CN104198066A (en) | 2014-07-31 | 2014-07-31 | Temperature sensor circuit based on reference source |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410373289.1A CN104198066A (en) | 2014-07-31 | 2014-07-31 | Temperature sensor circuit based on reference source |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107290074A (en) * | 2016-04-11 | 2017-10-24 | 成都锐成芯微科技股份有限公司 | Integrated temperature sensor structure |
| CN108614160A (en) * | 2016-12-13 | 2018-10-02 | 现代自动车株式会社 | Device for measuring resistance value |
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2014
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107290074A (en) * | 2016-04-11 | 2017-10-24 | 成都锐成芯微科技股份有限公司 | Integrated temperature sensor structure |
| CN108614160A (en) * | 2016-12-13 | 2018-10-02 | 现代自动车株式会社 | Device for measuring resistance value |
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