CN104282823A - Light emitting diode packaging structure - Google Patents
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- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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Abstract
一种发光二极管封装结构，包含一承载座、一黏着层、一高电压发光二极管晶粒及一封装件。承载座定义出一承载空间，黏着层设置在承载空间内且其热导率大于或等于1W/mK。高电压发光二极管晶粒设置在黏着层上，其顶面形成一沟槽，沟槽的位置对应于承载空间的光学中心位置处。封装件封装高电压发光二极管晶粒并包括多个漫射体。沟槽与封装件相连接，沟槽的宽度范围介于1微米到10微米间，深度则是小于或等于50微米。因此本发明可提供一种高发光亮度，且高发光效率的发光二极管封装结构。
A light-emitting diode packaging structure includes a carrier, an adhesive layer, a high-voltage light-emitting diode chip and a package. The bearing seat defines a bearing space, and the adhesive layer is arranged in the bearing space and has a thermal conductivity greater than or equal to 1W/mK. The high-voltage light-emitting diode chip is arranged on the adhesive layer, and a groove is formed on its top surface. The position of the groove corresponds to the optical center position of the carrying space. The package encapsulates the high voltage light emitting diode die and includes a plurality of diffusers. The trench is connected to the package. The width of the trench ranges from 1 micron to 10 microns, and the depth is less than or equal to 50 microns. Therefore, the present invention can provide a light-emitting diode packaging structure with high luminous brightness and high luminous efficiency.
Description
技术领域technical field
本发明涉及一种发光二极管封装结构，特别是指一种具有高电压发光二极管晶粒的发光二极管封装结构。The invention relates to a light-emitting diode packaging structure, in particular to a light-emitting diode packaging structure with high-voltage light-emitting diode crystal grains.
背景技术Background technique
传统上0.5瓦到3瓦发光二极管(Light Emitting Diode,LED)的封装(Package)，通常是采用两个低电压(2.8伏特至3.6伏特)的蓝光发光二极管晶粒(Die)，并搭配荧光粉(Phosphors)的设计来达到更高的亮度。然而，两个蓝光发光二极管的结构设计除了会造成后续打线制程(Wire Bonding Process)的难度增加与生产成本提高外，也会因为两个蓝色发光二极管间的光吸收效应(Light AbsorbingEffect)而使得发光亮度降低。Traditionally, the package (Package) of 0.5 watts to 3 watts of light-emitting diodes (Light Emitting Diode, LED) usually uses two low-voltage (2.8 volts to 3.6 volts) blue light-emitting diodes (Die), and is matched with phosphor (Phosphors) designed to achieve higher brightness. However, the structural design of the two blue light-emitting diodes will not only increase the difficulty of the subsequent wire bonding process (Wire Bonding Process) and increase the production cost, but also due to the light absorption effect (Light Absorbing Effect) between the two blue light-emitting diodes. Decreases the luminance of light.
发明内容Contents of the invention
本发明的目的在于提供一种高发光亮度，且高发光效率的发光二极管封装结构。The object of the present invention is to provide a light-emitting diode packaging structure with high luminous brightness and high luminous efficiency.
本发明发光二极管封装结构，包含一承载座、一黏着层、一高电压发光二极管晶粒及一封装件。该承载座包括一光学中心，并定义出一承载空间。该黏着层包括多个热传导粒子，且该黏着层的热导率大于或等于1W/mK。该高电压发光二极管晶粒设置在该黏着层上并位于该承载空间内，且包括一顶面、一驱动电压及至少一形成于该顶面且位置大致对应于该承载空间的该光学中心处的沟槽，该驱动电压的范围介于5伏特～7伏特间；The package structure of the light emitting diode of the present invention includes a bearing base, an adhesive layer, a high voltage light emitting diode crystal grain and a package. The carrying seat includes an optical center and defines a carrying space. The adhesive layer includes a plurality of heat-conducting particles, and the thermal conductivity of the adhesive layer is greater than or equal to 1W/mK. The high-voltage light-emitting diode die is disposed on the adhesive layer and located in the carrying space, and includes a top surface, a driving voltage, and at least one optical center formed on the top surface and roughly corresponding to the carrying space trench, the range of the driving voltage is between 5 volts and 7 volts;
该封装件封装该高电压发光二极管晶粒，其中，该发光二极管晶粒的沟槽是嵌合在该封装件内，且该沟槽的宽度范围介于1微米到10微米间，宽度小于或等于50微米。The package encapsulates the high-voltage light-emitting diode chip, wherein the groove of the light-emitting diode chip is embedded in the package, and the width of the groove ranges from 1 micron to 10 microns, and the width is less than or Equal to 50 microns.
本发明所述的发光二极管封装结构，该封装件的顶面到该高电压发光二极管晶粒顶面的最大距离小于0.5毫米。According to the light emitting diode packaging structure of the present invention, the maximum distance between the top surface of the package and the top surface of the high voltage light emitting diode grain is less than 0.5 mm.
本发明所述的发光二极管封装结构，其中，该高电压发光二极管晶粒还包括四个侧面，且至少一侧面到该承载座外周缘的最大距离小于或等于1毫米。In the LED packaging structure of the present invention, the high-voltage LED die further includes four sides, and the maximum distance from at least one side to the outer periphery of the carrier is less than or equal to 1 mm.
本发明所述的发光二极管封装结构，该黏着层主要是由具有所述热传导粒子的高分子材料所制成，所述热传导粒子选自由氧化锌、氧化铝及其混合所组成的群体，该黏着层的厚度范围介于0.5微米到8微米间。In the light emitting diode packaging structure of the present invention, the adhesive layer is mainly made of a polymer material having the heat-conducting particles, and the heat-conducting particles are selected from the group consisting of zinc oxide, aluminum oxide and a mixture thereof. The thickness of the layer ranges from 0.5 microns to 8 microns.
本发明所述的发光二极管封装结构，该封装件包括一漫射体，该漫射体主要是由质量中值直径小于或等于100纳米的粒子所组成。According to the LED packaging structure of the present invention, the package includes a diffuser, and the diffuser is mainly composed of particles with a mass median diameter less than or equal to 100 nanometers.
本发明发光二极管封装结构，包含一承载座、一黏着层、一高电压发光二极管晶粒及一封装件。该承载座包括一光学中心、一反射器，及一引线框架，该引线框架具有一第一金属导电架，及一与该第一金属导电架相间隔设置的第二金属导电架，该第一金属导电架、该第二金属导电架，及该反射器相配合界定出一承载空间，该第一金属导电架与该第二金属导电架分别具有一顶面，该顶面具有一与该反射器相接合的接合区，及至少一形成于该接合区上，且与该反射器相接合的接合槽。该黏着层包括多个热传导粒子。该高电压发光二极管晶粒设置在该黏着层上并位于该承载空间内，且包括一顶面、一驱动电压，及至少一形成于该顶面且位置大致对应于该承载空间的该光学中心处的沟槽，该驱动电压的范围介于5伏特到7伏特间。该封装件封装该高电压发光二极管晶粒，其中，该发光二极管晶粒的沟槽嵌合在该封装件内，且该沟槽的宽度范围介于1微米到10微米间，深度小于或等于50微米。The package structure of the light emitting diode of the present invention includes a bearing base, an adhesive layer, a high voltage light emitting diode crystal grain and a package. The carrier includes an optical center, a reflector, and a lead frame, the lead frame has a first metal conductive frame, and a second metal conductive frame spaced apart from the first metal conductive frame, the first metal conductive frame The metal conductive frame, the second metal conductive frame, and the reflector cooperate to define a bearing space. The first metal conductive frame and the second metal conductive frame each have a top surface, and the top surface has a reflector. The bonding area is connected with the reflector, and at least one bonding groove is formed on the bonding area and connected with the reflector. The adhesive layer includes a plurality of heat-conducting particles. The high-voltage light-emitting diode chip is disposed on the adhesive layer and located in the carrying space, and includes a top surface, a driving voltage, and at least one optical center formed on the top surface and roughly corresponding to the carrying space In the trench, the driving voltage ranges from 5 volts to 7 volts. The package encapsulates the high-voltage light-emitting diode chip, wherein the groove of the light-emitting diode chip is embedded in the package, and the width of the groove ranges from 1 micron to 10 microns, and the depth is less than or equal to 50 microns.
本发明所述的发光二极管封装结构，该第一金属导电架和该第二金属导电架分别具有至少一接合槽，该第一金属导电架的接合槽及该第二金属导电架的接合槽大致环绕该承载座的该承载空间。According to the light emitting diode packaging structure of the present invention, the first metal conductive frame and the second metal conductive frame respectively have at least one joint groove, and the joint groove of the first metal conductive frame and the joint groove of the second metal conductive frame are approximately The bearing space surrounding the bearing seat.
本发明所述的发光二极管封装结构，其中，该反射器具有一设置在该第一金属导电架及该第二金属导电架间的绝缘区，该绝缘区用以接合并绝缘该第一金属导电架及该第二金属导电架。其中，该第一金属导电架还具有一朝该第二金属导电架方向延伸，且与该反射器的绝缘区紧密接合的第一连接部，该第二金属导电架还具有一朝该第一金属导电架方向延伸，且与该绝缘区紧密接合的第二连接部。According to the light emitting diode packaging structure of the present invention, the reflector has an insulating area disposed between the first metal conductive frame and the second metal conductive frame, and the insulating area is used to bond and insulate the first metal conductive frame and the second metal conductive frame. Wherein, the first metal conductive frame also has a first connecting portion extending toward the second metal conductive frame and tightly bonded with the insulating region of the reflector, and the second metal conductive frame also has a first connecting portion extending toward the first metal conductive frame. The second connection portion extends in the direction of the metal conductive frame and is tightly bonded to the insulating region.
本发明所述的发光二极管封装结构，该第二金属导电架还具有一由所述第二连接部间定义出的凹陷部，该凹陷部的位置对应于该第一金属导电架的第一连接部。In the LED packaging structure of the present invention, the second metal conductive frame further has a recess defined between the second connecting parts, and the position of the recess corresponds to the first connection of the first metal conductive frame. department.
本发明所述的发光二极管封装结构，该第一金属导电架的第一连接部与该第二金属导电架的第二连接部分别具有一与该反射器的绝缘区紧密接合的弯曲接合面。In the light emitting diode packaging structure of the present invention, the first connection portion of the first metal conductive frame and the second connection portion of the second metal conductive frame each have a curved joint surface tightly bonded to the insulating region of the reflector.
本发明的有益效果在于：通过利用一驱动电压介于5伏特到7伏特间的高电压发光二极管晶粒来达到高发光亮度与减少生产成本，另外，利用黏着层的多个热传导粒子达到良好的散热效果，以提高电压发光二极管晶粒的发光效率。The beneficial effects of the present invention are: high luminous brightness and reduced production cost are achieved by using a high-voltage light-emitting diode crystal grain with a driving voltage between 5 volts and 7 volts, and in addition, good thermal conductivity is achieved by using a plurality of heat-conducting particles in the adhesive layer The heat dissipation effect is used to improve the luminous efficiency of voltage LED grains.
附图说明Description of drawings
图1A是一立体图，说明本发明发光二极管封装结构的第一实施例；FIG. 1A is a perspective view illustrating the first embodiment of the LED packaging structure of the present invention;
图1B是一俯视图，说明该第一实施例；Figure 1B is a top view illustrating the first embodiment;
图1C是一沿图1B中剖面线1C-1C的剖面图，说明该第一实施例；FIG. 1C is a sectional view along section line 1C-1C in FIG. 1B illustrating the first embodiment;
图1D是一沿图1B中剖面线1D-1D的剖面图，说明该第一实施例；Figure 1D is a cross-sectional view along section line 1D-1D in Figure 1B, illustrating the first embodiment;
图1E是一立体分解图，说明该第一实施例；Figure 1E is an exploded perspective view illustrating the first embodiment;
图1F是一立体图，说明该第一实施例的一引线框架；FIG. 1F is a perspective view illustrating a lead frame of the first embodiment;
图1G是一类似图1F的立体图，说明该引线框架；Figure 1G is a perspective view similar to Figure 1F illustrating the lead frame;
图2是一立体示意图，说明该第一实施例的一高电压发光二极管晶粒设置在一承载座上；FIG. 2 is a schematic perspective view illustrating that a high-voltage light-emitting diode chip of the first embodiment is disposed on a carrier;
图3A是一俯视示意图，说明该第一实施例；FIG. 3A is a schematic top view illustrating the first embodiment;
图3B是一类似图3A的俯视示意图，说明该高电压发光二极管晶粒旋转90度；FIG. 3B is a schematic top view similar to FIG. 3A , illustrating that the high-voltage light-emitting diode die is rotated by 90 degrees;
图4A是一剖面示意图，说明该第一实施例；FIG. 4A is a schematic cross-sectional view illustrating the first embodiment;
图4B是一类似图4A的剖面示意图，说明该高电压发光二极管晶粒与一封装件；FIG. 4B is a schematic cross-sectional view similar to FIG. 4A, illustrating the high-voltage light-emitting diode die and a package;
图4C是一剖面示意图，说明该高电压发光二极管晶粒的顶面形成一沟槽；FIG. 4C is a schematic cross-sectional view illustrating that a groove is formed on the top surface of the high-voltage light-emitting diode die;
图5是一立体图，说明该第一实施例的另一种实施态样；Fig. 5 is a perspective view illustrating another implementation of the first embodiment;
图6是一立体示意图，说明该高电压发光二极管晶粒在另一种实施态样中；FIG. 6 is a schematic perspective view illustrating the high-voltage light-emitting diode crystal grain in another embodiment;
图7是一俯视示意图，说明该第一实施例的另一种实施态样；Fig. 7 is a schematic top view illustrating another implementation of the first embodiment;
图8A是一立体图，说明本发明发光二极管封装结构的第二实施例；FIG. 8A is a perspective view illustrating a second embodiment of the LED packaging structure of the present invention;
图8B是一俯视图，说明该第二实施例；Figure 8B is a top view illustrating the second embodiment;
图8C是一沿图8B中剖面线8C-8C的剖面图，说明该第二实施例；Figure 8C is a cross-sectional view along section line 8C-8C in Figure 8B illustrating the second embodiment;
图8D是一沿图8B中剖面线8D-8D的剖面图，说明该第二实施例；Figure 8D is a cross-sectional view along section line 8D-8D in Figure 8B illustrating the second embodiment;
图8E是一立体分解图，说明该第二实施例；Figure 8E is an exploded perspective view illustrating the second embodiment;
图9是一立体示意图，说明该第二实施例的高电压发光二极管晶粒设置在承载座上；FIG. 9 is a schematic perspective view illustrating that the high-voltage light-emitting diode dies of the second embodiment are disposed on the carrier;
图10是一俯视示意图，说明该第二实施例；Figure 10 is a schematic top view illustrating the second embodiment;
图11是一仰视示意图，说明该第二实施例；Figure 11 is a schematic bottom view illustrating the second embodiment;
图12A是一俯视示意图，说明该第二实施例的一承载座具有二金属导电架；及FIG. 12A is a schematic top view illustrating that a bearing seat of the second embodiment has two metal conductive frames; and
图12B是一仰视示意图，说明所述金属导电架的构造。FIG. 12B is a schematic bottom view illustrating the structure of the metal conductive frame.
具体实施方式Detailed ways
下面结合附图及实施例对本发明进行详细说明。The present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.
参阅图1A～4C，及图5～7，本发明发光二极管封装结构的第一实施例，包含一承载座1、一黏着层2、一高电压发光二极管晶粒3及一封装件4。Referring to FIGS. 1A-4C and FIGS. 5-7 , the first embodiment of the LED packaging structure of the present invention includes a carrier 1 , an adhesive layer 2 , a high-voltage LED chip 3 and a package 4 .
参阅图1E、2与4A，承载座1包括一反射器11及一引线框架12。反射器11主要是由一反射材料所制成。引线框架12具有一第一金属导电架121及一与该第一金属导电架121相间隔设置的第二金属导电架122，且第一金属导电架121部分及第二金属导电架122部分如图4A所示地嵌入反射器11。反射器11与引线框架12的该第一金属导电架121、该第二金属导电架122相配合界定出一承载空间13，且反射器11具有一设置在第一金属导电架121与第二金属导电架122间的绝缘区14。此绝缘区14被用以电性绝缘第一金属导电架121与第二金属导电架122，使得第一金属导电架121与第二金属导电架122能分别作为一导电电极使用。在本实施例中，反射器11主要是由环氧模造物(Epoxy Molding Compound,EMC)所制成，且本实施例采用的是一四方扁平无引线(Quad Flat No-lead,QFN)的第一、第二金属导电架121、122。Referring to FIGS. 1E , 2 and 4A , the carrier 1 includes a reflector 11 and a lead frame 12 . The reflector 11 is mainly made of a reflective material. The lead frame 12 has a first metal conductive frame 121 and a second metal conductive frame 122 spaced apart from the first metal conductive frame 121, and the first metal conductive frame 121 and the second metal conductive frame 122 are partially shown in the figure The reflector 11 is embedded as shown in 4A. The reflector 11 cooperates with the first metal conductive frame 121 and the second metal conductive frame 122 of the lead frame 12 to define a carrying space 13, and the reflector 11 has a set between the first metal conductive frame 121 and the second metal conductive frame. The insulation area 14 between the conductive frames 122 . The insulating region 14 is used to electrically insulate the first metal conductive frame 121 and the second metal conductive frame 122 , so that the first metal conductive frame 121 and the second metal conductive frame 122 can be used as a conductive electrode respectively. In this embodiment, the reflector 11 is mainly made of epoxy molding compound (Epoxy Molding Compound, EMC), and what this embodiment uses is a quad flat no-lead (Quad Flat No-lead, QFN) First and second metal conductive frames 121 and 122 .
参阅图1E、1F与4A，第一金属导电架121具有一顶面及一底面，第二金属导电架122具有一顶面及一底面。第一金属导电架121的顶面具有一暴露区1211及一与该反射器11相接合的接合区1212，第二金属导电架122的顶面具有一暴露区1221及一与该反射器11相接合的接合区1222。第一金属导电架121的暴露区1211位置与第二金属导电架122的暴露区1221位置对应承载空间13，且第一金属导电架121的接合区1212与第二金属导电架122的接合区1222分别与反射器11相接合。第一金属导电架121的接合区1212与第二金属导电架122的接合区1222上分别形成至少一与该反射器11相接合的接合槽123。在本实施例中，第一金属导电架121的接合区1212与第二金属导电架122的接合区1222上分别形成二接合槽123。且第一金属导电架121的接合槽123与第二金属导电架122的接合槽123大致环绕第一金属导电架121的暴露区1211与第二金属导电架122的暴露区1221，也可以说，第一金属导电架121的接合槽123与第二金属导电架122的接合槽123大致环绕承载空间13。而第一金属导电架121的接合槽123与第二金属导电架122的接合槽123大致环绕承载空间13，如此可增加反射器11与引线框架12的接触面积，使得反射器11与引线框架12间的接合强度增加，并减少外界的水气由反射器11与引线框架12的接合处进入承载空间13的机会。1E, 1F and 4A, the first metal conductive frame 121 has a top surface and a bottom surface, and the second metal conductive frame 122 has a top surface and a bottom surface. The top surface of the first metal conductive frame 121 has an exposed area 1211 and a bonding area 1212 connected with the reflector 11, and the top surface of the second metal conductive frame 122 has an exposed area 1221 and a bonding area 1212 connected with the reflector 11. Bonded land 1222 . The position of the exposed area 1211 of the first metal conductive frame 121 and the position of the exposed area 1221 of the second metal conductive frame 122 correspond to the carrying space 13, and the joint area 1212 of the first metal conductive frame 121 and the joint area 1222 of the second metal conductive frame 122 are bonded to the reflectors 11, respectively. At least one joint groove 123 jointed with the reflector 11 is respectively formed on the joint area 1212 of the first metal conductive frame 121 and the joint area 1222 of the second metal conductive frame 122 . In this embodiment, two bonding grooves 123 are respectively formed on the bonding area 1212 of the first metal conductive frame 121 and the bonding area 1222 of the second metal conductive frame 122 . Moreover, the joint groove 123 of the first metal conductive frame 121 and the joint groove 123 of the second metal conductive frame 122 substantially surround the exposed area 1211 of the first metal conductive frame 121 and the exposed area 1221 of the second metal conductive frame 122 , that is to say, The engaging groove 123 of the first metal conductive frame 121 and the engaging groove 123 of the second metal conductive frame 122 substantially surround the carrying space 13 . The joint groove 123 of the first metal conductive frame 121 and the joint groove 123 of the second metal conductive frame 122 generally surround the carrying space 13, so that the contact area between the reflector 11 and the lead frame 12 can be increased, so that the reflector 11 and the lead frame 12 The bonding strength between the reflectors 11 and the lead frame 12 is reduced, and the chance of external moisture entering the carrying space 13 from the junction of the reflector 11 and the lead frame 12 is reduced.
引线框架12具有一预定厚度T(图未示)。第一金属导电架121的每一接合槽123与第二金属导电架122的每一接合槽123分别具有一深度，此深度的范围介于1T/4到3T/4间。且值得一提的是，在本实施例中，预定厚度T就是引线框架12的最大厚度M(图未示)，且第一金属导电架121的每一接合槽123的深度与第二金属导电架122的每一接合槽123的深度为引线框架12最大厚度M的一半。The lead frame 12 has a predetermined thickness T (not shown). Each engaging groove 123 of the first metal conductive frame 121 and each engaging groove 123 of the second metal conductive frame 122 respectively have a depth, and the depth ranges from 1T/4 to 3T/4. It is worth mentioning that, in this embodiment, the predetermined thickness T is the maximum thickness M (not shown) of the lead frame 12, and the depth of each joint groove 123 of the first metal conductive frame 121 is electrically conductive with the second metal. The depth of each engaging groove 123 of the frame 122 is half of the maximum thickness M of the lead frame 12 .
第一金属导电架121还具有一与第一金属导电架121的顶面及其底面相连接的环侧面，第二金属导电架122具有一与第二金属导电架122的顶面及其底面相连接的环侧面，且第一金属导电架121的环侧面及第二金属导电架122的环侧面上分别形成至少一与反射器11相接合的缺槽124，通过缺槽124使得反射器11与引线框架12的接触面积增加，进而提升反射器11与引线框架12间的接合强度。The first metal conductive frame 121 also has a ring side connected to the top surface of the first metal conductive frame 121 and its bottom surface, and the second metal conductive frame 122 has a ring side connected to the top surface of the second metal conductive frame 122 and its bottom surface. Connected ring side, and the ring side of the first metal conductive frame 121 and the ring side of the second metal conductive frame 122 respectively form at least one slot 124 connected with the reflector 11, through the slot 124, the reflector 11 and the The contact area of the lead frame 12 increases, thereby improving the bonding strength between the reflector 11 and the lead frame 12 .
参阅图1F,1G及图2，第一金属导电架121及第二金属导电架122还分别具有一被反射器11包覆的外围部125及多个连接端126，每一连接端126具有显露于反射器11外的一端面，且连接端126的厚度小于引线框架12的最大厚度M。在本实施例中，连接端126具有一最小厚度，且较佳的最小厚度范围大致介于1M/4与3M/4间，且此最小厚度大致与接合槽123的厚度相当。Referring to FIG. 1F, 1G and FIG. 2, the first metal conductive frame 121 and the second metal conductive frame 122 also have a peripheral portion 125 covered by the reflector 11 and a plurality of connecting ends 126, each connecting end 126 has an exposed On an end surface outside the reflector 11 , and the thickness of the connection end 126 is smaller than the maximum thickness M of the lead frame 12 . In this embodiment, the connection end 126 has a minimum thickness, and a preferred minimum thickness range is approximately between 1M/4 and 3M/4, and the minimum thickness is approximately equivalent to the thickness of the engaging groove 123 .
参阅图1F与图1G，在本实施例中，第一金属导电架121的外围部125与第二金属导电架122的外围部125还分别具有至少一延伸件1251，此延伸件1251是借由蚀刻的方式分别蚀刻第一金属导电架121的底面与第二金属导电架122的底面而形成，也因此，延伸件1251的厚度是径向减少且大致远离第一金属导电架121的焊接区(图未示)与第二金属导电架122的焊接区(图未示)。Referring to FIG. 1F and FIG. 1G, in this embodiment, the peripheral portion 125 of the first metal conductive frame 121 and the peripheral portion 125 of the second metal conductive frame 122 also have at least one extension piece 1251, and the extension piece 1251 is formed by The etching method is formed by etching the bottom surface of the first metal conductive frame 121 and the bottom surface of the second metal conductive frame 122 respectively, and therefore, the thickness of the extension 1251 is radially reduced and is generally far away from the welding area of the first metal conductive frame 121 ( The welding area (not shown) and the second metal conductive frame 122 (not shown).
参阅图1G与2，绝缘区14分别与第一金属导电架121及第二金属导电架122紧密接合，在本实施例中，绝缘区14上形成一相对于第一金属导电架121凹陷的第一凹陷部141，及二相对于第二金属导电架122凹陷的第二凹陷部142。第一金属导电架121还具有一由第一金属导电架121朝第二金属导电架122方向延伸的第一连接部1214，此第一连接部1214直接且紧密地与第一凹陷部141相接合，且第一连接部1214具有一弯曲的接合面1215，此接合面1215与绝缘区14紧密接合。第二金属导电架122还具有至少一由第二金属导电架122朝第一金属导电架121方向延伸的第二连接部1224，在本实施例中，第二连接部1224的数目为两个，此两个第二连接部1224分别紧密地与各别的第二凹陷部142相接合。每一第二连接部1224具有一直接与绝缘区14紧密结合的弯曲的接合面1225。参阅图1F、1G与2，在本实施例中，第一金属导电架121的第一连接部1214是与第二金属导电架122的第二连接部1224交错排列，且在两个第二连接部1224间定义出一位置相对应于第一连接部1214的凹陷部1226。Referring to Figures 1G and 2, the insulating region 14 is tightly bonded to the first metal conductive frame 121 and the second metal conductive frame 122 respectively. A recessed portion 141 , and two second recessed portions 142 recessed relative to the second metal conductive frame 122 . The first metal conductive frame 121 also has a first connecting portion 1214 extending from the first metal conductive frame 121 toward the direction of the second metal conductive frame 122 , and the first connecting portion 1214 is directly and tightly engaged with the first concave portion 141 , and the first connecting portion 1214 has a curved bonding surface 1215 , and the bonding surface 1215 is tightly bonded to the insulating region 14 . The second metal conductive frame 122 also has at least one second connecting portion 1224 extending from the second metal conductive frame 122 toward the first metal conductive frame 121. In this embodiment, the number of the second connecting portion 1224 is two. The two second connecting portions 1224 are closely engaged with the respective second recessed portions 142 . Each second connecting portion 1224 has a curved bonding surface 1225 that is directly bonded to the insulating region 14 tightly. 1F, 1G and 2, in this embodiment, the first connection portion 1214 of the first metal conductive frame 121 is arranged alternately with the second connection portion 1224 of the second metal conductive frame 122, and between the two second connections A concave portion 1226 corresponding to the first connecting portion 1214 is defined between the portions 1224 .
参阅图1D、1G与图2，值得一提的是，第一连接部1214与第二连接部1224分别具有一厚度，此厚度小于引线框架12的最大厚度M，如此将使得第一连接部1214的接合面1215与第二连接部1224的接合面1225非共平面。也就是说，第一连接部1214与第二连接部1224的接合面1215、1225是呈曲线型，且分别不与第一金属导电架121的底面及第二金属导电架122的底面垂直。此种结构设计能在绝缘区14与第一金属导电架121间，及绝缘区14与第二金属导电架122间提供足够的滑动阻力，以达到克服侧向机械剪力的效果。此外，绝缘区14与第一金属导电架121间，及绝缘区14与第二金属导电架122间上下交错的结构设计能有效减少外界水气进入承载空间13(见图1D)的机会。Referring to FIG. 1D, 1G and FIG. 2, it is worth mentioning that the first connecting portion 1214 and the second connecting portion 1224 each have a thickness, which is smaller than the maximum thickness M of the lead frame 12, so that the first connecting portion 1214 The bonding surface 1215 of the second connecting portion 1224 is not coplanar with the bonding surface 1225 of the second connecting portion 1224 . That is to say, the bonding surfaces 1215 and 1225 of the first connecting portion 1214 and the second connecting portion 1224 are curved, and are not perpendicular to the bottom surface of the first metal conductive frame 121 and the bottom surface of the second metal conductive frame 122 respectively. This structural design can provide sufficient sliding resistance between the insulating region 14 and the first metal conductive frame 121 , and between the insulating region 14 and the second metal conductive frame 122 , so as to overcome the effect of lateral mechanical shear force. In addition, the vertically staggered structural design between the insulating region 14 and the first metal conductive frame 121 and between the insulating region 14 and the second metal conductive frame 122 can effectively reduce the chance of external moisture entering the carrying space 13 (see FIG. 1D ).
参阅图4A与图4B，黏着层2设置在承载空间13上，且其热导率大于或等于1W/mK，在本实施例中，黏着层2的厚度范围介于0.5微米到8微米间，且黏着层2是由例如硅胶的高分子材料所制成。此高分子材料具有多个热传导粒子，该黏着层2的热导率大于或等于1W/mK。而较佳的黏着层2热导率范围介于1W/mK到20W/mK间。在本发明发光二极管封装结构的其他实施例中，黏着层2的热阻率(Thermal Resistivity)范围可大于或等于1K/W，较佳的范围是在2.5K/W到30K/W间，且较佳的热传导粒子是选自由氧化锌(ZincOxide)、氧化铝(Aluminum Oxide)或其混合所组成的群体所制成。当采用高电压发光二极管晶粒3时，会比低电压发光二极管晶粒(图未示)产生更多的热问题。因此本发明在采用高电压发光二极管晶粒3时，同时搭配具有高热传导粒子的黏着层2，以解决发光二极管封装结构因热问题而导致产品信赖度不佳的问题。Referring to FIG. 4A and FIG. 4B, the adhesive layer 2 is disposed on the bearing space 13, and its thermal conductivity is greater than or equal to 1 W/mK. In this embodiment, the thickness of the adhesive layer 2 ranges from 0.5 microns to 8 microns. And the adhesive layer 2 is made of polymer material such as silica gel. The polymer material has a plurality of heat conducting particles, and the heat conductivity of the adhesive layer 2 is greater than or equal to 1W/mK. A preferred range of thermal conductivity of the adhesive layer 2 is between 1 W/mK and 20 W/mK. In other embodiments of the light emitting diode packaging structure of the present invention, the thermal resistivity range of the adhesive layer 2 may be greater than or equal to 1K/W, preferably between 2.5K/W and 30K/W, and Preferably, the heat-conducting particles are selected from the group consisting of Zinc Oxide, Aluminum Oxide or a combination thereof. When high-voltage LED die 3 is used, more thermal problems will be generated than low-voltage LED die (not shown). Therefore, when the present invention adopts the high-voltage LED die 3 , it is equipped with the adhesive layer 2 having high thermal conductivity particles, so as to solve the problem of poor product reliability caused by thermal problems in the LED packaging structure.
高电压发光二极管晶粒3经由该黏着层2设置在承载空间13内，并具有一顶面31，及至少一形成在顶面31的沟槽32。在本实施例中，沟槽32的位置大致对应承载空间13的光学中心处，且光学中心的位置大致便是承载空间13的几何中心处，该高电压发光二极管晶粒3的该沟槽32是嵌合在该封装件4内。The high-voltage LED chip 3 is disposed in the carrying space 13 via the adhesive layer 2 , and has a top surface 31 and at least one groove 32 formed on the top surface 31 . In this embodiment, the position of the groove 32 roughly corresponds to the optical center of the carrying space 13 , and the position of the optical center is roughly the geometric center of the carrying space 13 , the groove 32 of the high-voltage LED chip 3 is embedded in the package 4 .
参阅图3B，为本发明发光二极管封装结构第一实施例的另一实施态样，在该实施态样中，设置在承载空间13(见图4A)内的高电压发光二极管晶粒3旋转了90度。在本实施例中，高电压发光二极管晶粒3的驱动电压(Driving Voltage)范围介于5伏特到7伏特间，且高电压发光二极管晶粒3的发光波长范围介于445纳米到465纳米间，而较佳的高电压发光二极管晶粒3的驱动电压(Driving Voltage)范围是介于5.8伏特到6.8伏特间。Referring to FIG. 3B, it is another embodiment of the first embodiment of the light emitting diode packaging structure of the present invention. In this embodiment, the high voltage light emitting diode crystal grain 3 arranged in the carrying space 13 (see FIG. 4A) rotates 90 degrees. In this embodiment, the driving voltage range of the high-voltage LED grain 3 is between 5 volts and 7 volts, and the emission wavelength range of the high-voltage LED grain 3 is between 445 nanometers and 465 nanometers. , and the driving voltage range of the preferred high-voltage light-emitting diode die 3 is between 5.8 volts and 6.8 volts.
参阅图4A与图4B，封装件4将高电压发光二极管晶粒3的沟槽32封装在其中，并包括一顶面40及一高分子材料41，高分子材料41具有多个漫射体42及多个磷光粉43。封装件4的顶面40到高电压发光二极管晶粒3的顶面31具有一最大距离D，较佳的最大距离D数值小于0.5毫米。且封装件4的结构由顶面40至高电压发光二极管晶粒3呈一凹陷结构。由于高电压发光二极管晶粒3的顶面31与封装件4的顶面40距离短，所以沟槽32能有效加强高电压发光二极管晶粒3与封装件4间的接合强度。值得注意的是，封装件4设置在承载空间13时，会因表面张力的因素，使得承载空间13的光学中心的胶量少于承载空间13的非光学中心的胶量(如图4B所示)，因此本发明借由将高电压发光二极管晶粒3的沟槽32设置在承载空间13的光学中心处，可强化封装件4与高电压发光二极管晶粒3的结合强度。Referring to FIG. 4A and FIG. 4B, the package 4 encapsulates the groove 32 of the high-voltage light-emitting diode chip 3, and includes a top surface 40 and a polymer material 41, and the polymer material 41 has a plurality of diffusers 42 and a plurality of phosphor powders 43 . There is a maximum distance D between the top surface 40 of the package 4 and the top surface 31 of the high-voltage LED chip 3 , and a preferred value of the maximum distance D is less than 0.5 mm. And the structure of the package 4 is a concave structure from the top surface 40 to the high-voltage LED chip 3 . Since the distance between the top surface 31 of the high voltage LED chip 3 and the top surface 40 of the package 4 is short, the groove 32 can effectively enhance the bonding strength between the high voltage LED chip 3 and the package 4 . It should be noted that when the package 4 is placed in the carrying space 13, the amount of glue in the optical center of the carrying space 13 will be less than that in the non-optical center of the carrying space 13 due to surface tension factors (as shown in FIG. 4B ). ), so the present invention can strengthen the bonding strength between the package 4 and the high-voltage LED die 3 by disposing the groove 32 of the high-voltage LED die 3 at the optical center of the carrying space 13 .
在本实施例中，封装件4的高分子材料41为硅氧树脂(SiliconeResin)。而较佳的漫射体42需均匀地分布在高分子材料41内，并由二氧化硅(Silicon Oxide)或是二氧化钛(Titanium Oxide)所组成的多个散射粒子所组成，且散射粒子的质量中值直径(Mass MedianDiameter)数值D50是小于或等于100纳米。也就是说，本案的散射粒子使用的是纳米粒子，其能有效将发光二极管晶粒发出的光线做散射混光。而且需要注意的是，若欲得到较高的光转换效率，漫射体42不能仅存在于封装件4的底部。In this embodiment, the polymer material 41 of the package 4 is silicone resin (Silicone Resin). The preferred diffuser 42 needs to be evenly distributed in the polymer material 41, and is composed of a plurality of scattering particles composed of silicon dioxide (Silicon Oxide) or titanium dioxide (Titanium Oxide), and the quality of the scattering particles The median diameter (Mass MedianDiameter) value D50 is less than or equal to 100 nanometers. That is to say, the scattering particles used in this case are nanoparticles, which can effectively scatter and mix the light emitted by the LED crystal grains. Moreover, it should be noted that if higher light conversion efficiency is desired, the diffuser 42 cannot only exist at the bottom of the package 4 .
参阅图3A与图3B，值得一提的是，高电压发光二极管晶粒3包括四个侧面，至少一侧面到该承载座1外周缘的最大距离小于或等于1毫米，在本实施例中，具体而言，四个侧面中的任一侧面到反射器11外侧缘的最大距离是小于或等于1毫米。更具体地来说，高电压发光二极管晶粒3具有二长边与二短边，而任一长边到反射器11的反射面的距离L小于或等于1毫米。Referring to Fig. 3A and Fig. 3B, it is worth mentioning that the high-voltage light-emitting diode crystal grain 3 includes four sides, and the maximum distance from at least one side to the outer periphery of the bearing seat 1 is less than or equal to 1 mm. In this embodiment, Specifically, the maximum distance from any one of the four sides to the outer edge of the reflector 11 is less than or equal to 1 mm. More specifically, the high-voltage LED die 3 has two long sides and two short sides, and the distance L from any long side to the reflective surface of the reflector 11 is less than or equal to 1 mm.
参阅图4A与图4B，在本实施例中，承载座1的深度为0.33毫米，且如前所述，封装件4由于其顶面40朝向高电压发光二极管晶粒3是呈一凹陷结构，使得封装件4还包括一最高点及一最低点。因此，在本实施例中，最高点与最低点间的距离D1大约为0.033毫米，最低点到高电压发光二极管晶粒3顶面31的距离D2大约为0.127毫米。而高电压发光二极管晶粒3的厚度D3的范围大约介于110微米到150微米间。简单来说，承载空间13的深度仅能容纳高电压发光二极管晶粒3，且距离D2与距离D3的比值(D2/D3)约为0.49。Referring to FIG. 4A and FIG. 4B, in this embodiment, the depth of the bearing seat 1 is 0.33 mm, and as mentioned above, the package 4 has a concave structure because its top surface 40 faces the high-voltage light-emitting diode die 3, The package 4 also includes a highest point and a lowest point. Therefore, in this embodiment, the distance D1 between the highest point and the lowest point is about 0.033 mm, and the distance D2 between the lowest point and the top surface 31 of the high-voltage LED die 3 is about 0.127 mm. The thickness D3 of the high-voltage LED die 3 ranges from approximately 110 microns to 150 microns. In short, the depth of the carrying space 13 can only accommodate the high-voltage LED die 3 , and the ratio ( D2 / D3 ) of the distance D2 to the distance D3 is about 0.49.
参阅图4C，高电压发光二极管晶粒3包括一反射层311、一蓝宝石基板312、一主动层313、一负型电极314(N-type electrode)及一正型电极315(P-type electrode)。蓝宝石基板312被做为基板使用。反射层311形成在蓝宝石基板312底面下方。主动层313形成在蓝宝石基板312顶面上并被做为发光层(Light Emitting Layer)使用。正型电极315与负型电极314形成在主动层313上。在本实施例中，高电压发光二极管晶粒3是由二个子发光二极管晶粒部(Sub-LEDs)所组成，且沟槽32是形成在两个子发光二极管晶粒部间。而正型电极315的高度h1约为2微米；沟槽32的深度h2小于或等于50微米；沟槽32的宽度w1的范围介于1微米到10微米间；负型电极314的高度h3约为1微米。Referring to FIG. 4C, the high-voltage light-emitting diode grain 3 includes a reflective layer 311, a sapphire substrate 312, an active layer 313, a negative electrode 314 (N-type electrode) and a positive electrode 315 (P-type electrode) . A sapphire substrate 312 is used as a substrate. The reflection layer 311 is formed under the bottom surface of the sapphire substrate 312 . The active layer 313 is formed on the top surface of the sapphire substrate 312 and is used as a light emitting layer (Light Emitting Layer). The positive electrode 315 and the negative electrode 314 are formed on the active layer 313 . In this embodiment, the high-voltage LED die 3 is composed of two sub-LEDs (Sub-LEDs), and the trench 32 is formed between the two sub-LEDs. The height h 1 of the positive electrode 315 is about 2 microns; the depth h 2 of the groove 32 is less than or equal to 50 microns; the width w 1 of the groove 32 ranges from 1 micron to 10 microns; The height h3 is about 1 micron.
本发明发光二极管封装结构不仅能提升高电压发光二极管晶粒3的发光效率，并同时减少封装成本，此外，至少一沟槽32的设计亦能提升高电压发光二极管晶粒3与封装件4间的封装强度。The LED packaging structure of the present invention can not only improve the luminous efficiency of the high-voltage LED die 3, but also reduce the packaging cost. In addition, the design of at least one groove 32 can also improve the distance between the high-voltage LED die 3 and the package 4. packaging strength.
参阅图5、6与7，为第一实施例的另一实施态样，本实施态样与第一实施例的差别在于在第一实施例中，承载空间13(见图4A)的形状呈圆槽状，而本实施态样中，承载空间13的形状呈方槽状。Referring to Fig. 5, 6 and 7, it is another embodiment of the first embodiment. The difference between this embodiment and the first embodiment is that in the first embodiment, the shape of the bearing space 13 (see Fig. 4A) is In this embodiment, the bearing space 13 is in the shape of a square groove.
参阅图8A～8E及图9～11，为本发明发光二极管封装结构的第二实施例，本实施例与第一实施例的差别在于本实施例中，反射器11是由1,4-环己烷二甲醇对苯二甲酸乙二酯(1,4-cyclohexylenedimethylene terephthalate)所制成，且引线框架12具有至少一由反射器11的外周缘向外延伸的延伸部120。Referring to Figures 8A-8E and Figures 9-11, it is the second embodiment of the light emitting diode packaging structure of the present invention. The difference between this embodiment and the first embodiment is that in this embodiment, the reflector 11 is made of 1,4-ring The lead frame 12 is made of ethylene terephthalate (1,4-cyclohexylene ethylene terephthalate), and the lead frame 12 has at least one extending portion 120 extending outward from the outer periphery of the reflector 11 .
参阅图11、12A与12B，本实施例与第一实施例的另一个差别在于引线框架12具有二个相间隔设置的金属导电架1200及二个U型槽1202。每一金属导电架1200具有二穿孔1201，而此四个穿孔1201分别设置在此二金属导电架1200的角落末端位置上。U型槽1202分别形成在金属导电架1200底面的外周缘上，用以使反射器11得以更稳固地与金属导电架1200相连接。而本实施例其余各部件的特征、材料特性及操作步骤与上述的第一实施例相似，故不再赘述。Referring to FIGS. 11 , 12A and 12B, another difference between this embodiment and the first embodiment is that the lead frame 12 has two metal conductive frames 1200 and two U-shaped grooves 1202 arranged at intervals. Each metal conductive frame 1200 has two through holes 1201 , and the four through holes 1201 are respectively arranged at the corner end positions of the two metal conductive frames 1200 . The U-shaped grooves 1202 are respectively formed on the outer peripheral edge of the bottom surface of the metal conductive frame 1200 for connecting the reflector 11 to the metal conductive frame 1200 more stably. The features, material properties and operation steps of the remaining components of this embodiment are similar to those of the above-mentioned first embodiment, so details will not be repeated here.
综上所述，通过一驱动电压介于5伏特到7伏特间的高电压发光二极管晶粒3来达到高发光亮度与减少生产成本，另外，利用黏着层2的多个热传导粒子达到良好的散热效果，以提高电压发光二极管晶粒3的发光效率。To sum up, a high-voltage light-emitting diode chip 3 with a driving voltage between 5 volts and 7 volts can be used to achieve high luminance and reduce production costs. In addition, a plurality of heat-conducting particles in the adhesive layer 2 can be used to achieve good heat dissipation. effect, so as to improve the luminous efficiency of the crystal grain 3 of the voltage LED.
以上所述者，仅为本发明的实施例而已，当不能以此限定本发明实施的范围，即大凡依本发明权利要求书及说明书内容所作的简单的等效变化与修饰，皆仍属本发明涵盖的范围。The above are only embodiments of the present invention, and should not limit the scope of the present invention with this, that is, all simple equivalent changes and modifications made according to the claims of the present invention and the contents of the description still belong to the present invention. scope of the invention.
Claims (11)
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| US201361845526P | 2013-07-12 | 2013-07-12 | |
| US61/845,526 | 2013-07-12 | ||
| TW102144367 | 2013-12-04 | ||
| TW102144367A TWI513068B (en) | 2013-07-12 | 2013-12-04 | Light-emitting diode structure, metal bracket of light-emitting diode structure, and bearing block module |
| US201461977701P | 2014-04-10 | 2014-04-10 | |
| US61/977,701 | 2014-04-10 |
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