CN104300361A - Semiconductor laser unit cavity surface coating film control wafer and application - Google Patents

Abstract

The invention provides a semiconductor laser unit cavity surface coating film control wafer and belongs to the technical field of semiconductor laser unit technologies. At present, coating film control wafers used at home and abroad are manufactured according to the size of a formal wafer, the semiconductor laser unit cavity surface coating film control wafer is single-sided I-shaped, and the other side of the control wafer is still the same as the formal wafer in size. The semiconductor laser unit cavity surface coating film control wafer is exquisite in design, easy to process, practical, simple and convenient to operate, separation difficulty brought by film layer adhesion after film coating is reduced, the damage degree of a semiconductor laser unit cavity surface film is reduced, and the reliability of a semiconductor laser unit is improved.

Description

A semiconductor laser cavity surface coating companion and its use

technical field

The invention relates to a coating companion on the cavity surface of a semiconductor laser. The invention relates to a companion for protecting the cavity film layer of a semiconductor laser, and belongs to the technical field of semiconductor laser technology.

Background technique

High-power semiconductor lasers have the characteristics of all solid-state, small size, light weight, long life, high efficiency, high reliability, adjustable, stable low-voltage operation, etc. They are mainly used as pump sources for solid-state lasers, and in laser processing, laser Welding, laser printing and other fields have a wide range of applications. Semiconductor lasers are the key components of a new generation of high-tech, and will play a pivotal role in future industrial development.

The cleavage plane as the resonator is an important part of the semiconductor laser, and it has a very important influence on the reliability of the device. The reflectivity of the natural cleavage plane of the usual GaAs laser is about 32%, which is not an ideal value, and this natural cleavage plane is easy to oxidize in the air and be polluted by the surrounding environment, which inhibits the performance of the laser, especially for high-power lasers. service life. Optimizing the coating on the cavity surface of the laser can improve the output characteristics of the laser to a certain extent, increase its output power and service life, and it has become one of the widely used means to improve the characteristics of semiconductor lasers.

Because the single die size of the semiconductor laser is very small, usually the length is 500 to 600 microns, the width (cavity length) is 1 to 4 mm, and the height is 120 to 130 microns, so it is generally used in the form of semiconductor laser cleavage strips when coating the cavity surface. (Each semiconductor laser cleavage bar can be cleaved into several semiconductor laser single tube cores). The cleavage bar (5) is shown in Figure 5, the height of the cleavage bar is 120 to 130 microns, the width (cavity length) is 1 to 4 mm, and the length is 1 to 3 cm. The design of the semiconductor laser coating companion chip must solve the following basic problems: the companion chip structure must ensure that the coated official chip and the companion chip can be effectively separated, and the regular cavity surface must be kept tidy. Therefore, we design a new type of semiconductor laser cavity surface coating companion, which is exquisite in design, easy to process, practical and simple, easy to operate, reduces the separation difficulty caused by film adhesion after coating, and reduces the semiconductor The damage degree of the film layer of the laser cavity improves the reliability of the semiconductor laser.

Contents of the invention

The object of the present invention is to provide a new type of semiconductor laser cavity surface coating companion, which reduces the separation difficulty caused by the adhesion of the film layer after coating, and reduces the damage degree of the cavity film layer of the semiconductor laser, and improves the semiconductor laser. reliability.

The invention provides a semiconductor laser cavity surface coating companion, which is characterized in that the structure of one side of the companion is I-shaped, that is, a rectangular parallelepiped is missing on two opposite long sides of one side of the companion, so that the remaining part of the surface is It is an I-shaped structure, and the opposite side of the accompanying piece still retains the same size as the official piece. As shown in Figure 1.

Here, take a companion with a width (cavity length) of 4 mm and a length of 12.5 mm (1) as an example. On this side of the companion, 10.5 mm in length (2) is etched at its two long sides, respectively. A hexahedron with a width and a height of about 10-20um (3), the distance between the top and the bottom of the top and bottom of the upper and lower ends of the accompanying sheet is 1mm (4), as shown in Figure 2.

The present invention provides that when the semiconductor laser cavity surface coating companion is used, the side missing two cuboids is called the front, and the side opposite to this side is called the back. together, so that the etched front faces outward, as shown in Figure 3. Then the etched front side is in contact with one side of the official sheet, and the same two accompanying sheets are still placed on the other side of the official sheet, and placed one by one until the requirements are met, as shown in Figure 4.

The material of the companion piece of the present invention can be metal or other semiconductor materials.

The companion piece is a rectangular parallelepiped as a whole, prepared according to the size of the official piece, but on one side of the companion piece, this structure can be obtained by designing a photolithography plate and using dry etching; while the other side of the companion piece still retains its same structure as the official piece. The same dimensions as the slices, as shown in Figure 1.

The invention has the advantages that: the single-sided I-shaped structure can effectively solve the film layer adhesion problem after coating, while not affecting the normal coating, it reduces the damage degree of the semiconductor laser cavity film layer and improves the semiconductor laser. Reliability; this companion piece is made of metal or other semiconductor materials, and metal and semiconductor materials have their own advantages and disadvantages. Here we take GaAs as an example to briefly introduce; this companion piece has exquisite design, easy processing, practical and simple , Easy operation and so on.

Description of drawings

Figure 1: The overall structure of the accompanying film

Figure 2: Dimensional exploded view of the accompanying chip structure

Figure 3: Instructions for the use of accompanying tablets

Figure 4: Arrangement of accompanying film and official film

Figure 5: Schematic diagram of the cleavage sheet

Figure 6: The official piece and the new companion piece glued together

In the picture:

1-Accompany the long side of the film

2- Etch the long side of the hexahedron with the slice

3- Etching the short side of the hexahedron with slices

4- The length from the etching place to the upper end of the companion piece

5- Cleavage good companion film

Detailed ways

The present invention will be further described below in conjunction with the examples, but the present invention is not limited to the following examples.

Example 1

1. Here we take a companion piece with a length of 12.5mm and a width of 4mm as an example. The width of the etched part is 10-20um and the length is 10.5mm. Use a pre-designed photolithography plate to glaze the GaAs substrate. Carve out the required pattern, and use dry etching or wet etching to etch the designed structure. In order to obtain the companion film required for the experiment, the width of the exposure area should be widened as much as possible when designing the photolithography plate , so that the desired etching depth can be obtained during etching.

2. Use a dicing machine to cleavage the etched GaAs test piece into a companion piece with a strip length of 12.5mm and a strip width of 4mm. The companion piece obtained at this time is the required new semiconductor laser cavity surface coating companion piece, such as Figure 2 shows.

3. Place the unetched surface opposite to the engraved surface of the two new-type semiconductor laser cavity surface coating companions that are the same as in step 2 above, adjacent to each other, as shown in Figure 3.

4. Place the unetched side of two identical new-type semiconductor laser cavity surface coating companions adjacent to each other, and place the etched side outwards adjacent to the official chip, and place them repeatedly until the number required for the experiment is reached. As shown in Figure 4.

5. Conduct the coating experiment on the installed official film and the companion film. After the test, the test film and the companion film are adhered to each other. Due to the special I-shaped structure of the new semiconductor laser cavity surface coating companion film, the companion film is adjacent to the official film. There is a gap of about 20um, which can be peeled off with tweezers without damaging the cavity surface film of the formal sheet, as shown in Figure 6.

Claims (4)

1. accompany sheet for the protection of films on cavity surfaces of semiconductor lasers rete for one kind; it is characterized in that; the structure of the one side of sheet is accompanied to be I-shaped; namely a cuboid is lacked respectively accompanying on two relative long limits of sheet face; thus the position making this face remaining is an I-shape construction; and the another side of accompanying sheet relative, still retain the size identical with formal sheet.

2. accompany sheet according to claim 1 a kind of for the protection of films on cavity surfaces of semiconductor lasers rete; it is characterized in that; the width lacking the one side of a cuboid is 4mm, length is 12.5mm; on this face of accompanying sheet; long 10.5mm is etched away respectively in two long edge position; wide and high is the hexahedron of 10 ~ 20um, makes its top and bottom distance accompany the length at the two ends up and down of sheet to be all 1mm.

3. claim 1 or 2 a kind of accompanies sheet for the protection of films on cavity surfaces of semiconductor lasers rete, and it is characterized in that, its material is metal.

4. a kind of application process of accompanying sheet for the protection of films on cavity surfaces of semiconductor lasers rete of claim 1 or 2; it is characterized in that; the one side of disappearance two cuboid is called front; the one side that then face is relative is therewith called the back side; should the sheet back side be adjacent puts together by identical for two panels accompanying during use; make through the front of over etching outwardly; then the one side through the front of over etching with formal sheet is contacted; still put identical two panels at the another side of this formal sheet and accompany sheet; successively put down, till reaching requirement.