CN104409446A - Conformal shielding structure applying lead bonding, and manufacture process thereof - Google Patents
Conformal shielding structure applying lead bonding, and manufacture process thereof Download PDFInfo
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- CN104409446A CN104409446A CN201410579182.2A CN201410579182A CN104409446A CN 104409446 A CN104409446 A CN 104409446A CN 201410579182 A CN201410579182 A CN 201410579182A CN 104409446 A CN104409446 A CN 104409446A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The invention relates to a manufacture process of a conformal shielding structure applying lead bonding. The process comprises the following steps: preparing a substrate with multiple radio frequency module units arranged thereon, adjacent radio frequency module units being bonded through multiple leads; connecting the bottom ends of the multiple leads to a grounding layer; performing glue sealing on the multiple radio frequency module units on the substrate by use of filling resins, the height of the filling resins being higher than the height of any leads; performing semi-cutting or total cutting between the adjacent radio frequency module units to enable the leads to be exposed from the side walls of the filling resins; and performing sputtering to deposit metal layers on the surfaces of the filling resins, the metal layers being in contact with the leads so as to enable the metal layers to be connected with the grounding layer. The manufacture process of the conformal shielding structure, provided by the invention, ingeniously applies the lead bonding, can easily enable the shielding layers in radio frequency modules to be conducted with internal circuits, and can ensure that the shielding layers of the radio frequency modules are effectively grounded without using any additional components for connection with the side wall.
Description
Technical field
The present invention relates to the technical field of Electronic Packaging shielding, more particularly, the present invention relates to a kind of the profiling shielding construction (conformal shielding) and the manufacture craft thereof that adopt wire bonding.
Background technology
Electromagnetic Interference (EMI) and radio wave interference (RFI) ubiquity in advanced information society.And along with the integrated level of electronic product internal integrated circuit radio-frequency module more and more higher, electronic product is also more and more miniaturized, but its function is powerful all the more, the electromagnetic intensity produced therefrom is corresponding raising also, it directly or indirectly can cause electronic devices and components, and electric equipment produces malfunction operation or system down.In the microelectronics industry high speed development epoch, electro-magnetic screen layer is used to be prevent the necessary preventive means of Contamination of Electromagnetic Wave.In the prior art, most of ASE/USI screen patent is all based on full cutting process, just there will be hemisection process allow two-sided surface mount (SMT) or bilateral formation problems when running into two surface mount (SMT) technique.As shown in Figure 1, in prior art, ASE electronic shield layer technology uses the conducting wire on substrate to connect screen.As shown in Figure 2, the patent of the shielding layer structure of Skyworks company adopts based on wire bonding and screen routing.But above-mentioned two kinds of processes all face profiling shielding and are not exclusively connected to ground plane, thus cause shield effectiveness undesirable.
Summary of the invention
In order to solve above-mentioned technical problem existing in prior art, the object of the present invention is to provide a kind of the profiling shielding construction and the manufacture craft thereof that adopt wire bonding.
In order to solve the problems of the technologies described above and realize foregoing invention object, a first aspect of the present invention provides following technical scheme: a kind of manufacture craft adopting the profiling shielding construction of wire bonding, is characterized in that comprising the following steps:
(1) substrate it with multiple radio-frequency module unit is prepared, and by many wire bondings between described adjacent radio frequency modular unit; And the bottom of described many lead-in wires is connected to ground plane;
(2) utilize potting resin to carry out sealing to the multiple radio-frequency module unit on described substrate, and the height of described potting resin is higher than the height gone between arbitrarily;
(3) between adjacent radio frequency modular unit, carry out hemisection or entirely cut, lead-in wire is come out from the sidewall of potting resin;
(4) at potting resin surface sputter-deposited metal level, and described metal level and described wire contacts, and then make described metal level be connected to ground plane.
Wherein, the height of many lead-in wires between described adjacent radio frequency modular unit is identical or not identical.
Wherein, correspondingly between described adjacent radio frequency modular unit be provided with terminal pin, described many lead-in wires are all arranged on described terminal pin, and described lead-in wire is connected to ground plane by the through hole be arranged on described terminal pin.
Wherein, the material of described metal level is Cu, Al, Ni, Co, Ag, Ti or their alloy.
Preferably, described metal level is Cu-Co-Si electro-magnetic screen layer, and the thickness of described Cu-Co-Si electro-magnetic screen layer is 2 ~ 10 μm; Preferably, the thickness of described electro-magnetic screen layer is 2 ~ 5 μm.
Wherein, described Cu-Co-Si electro-magnetic screen layer is obtained by magnetron sputtering plating, wherein, sputtering target material is Cu-Co-Si composite target material, and the mass percentage of cobalt is 32 ~ 35wt% in described composite target material, the mass percentage of silicon is 3 ~ 6wt%, and surplus is copper; Sputtering technology is: take argon gas as working gas, and its flow is 100 ~ 200sccm; Sputtering power is 18 ~ 20kW, and coating temperature is 30 ~ 50 DEG C.
Wherein, described potting resin is composition epoxy resin.
A second aspect of the present invention also relates to a kind of profiling shielding construction adopting wire bonding.
The profiling shielding construction of employing wire bonding of the present invention, comprises the substrate it with radio-frequency module, it is characterized in that: described radio-frequency module periphery has multiple terminal pins, the bottom electrical connection ground plane of described terminal pins; Described radio-frequency module adopts potting resin carry out encapsulating and form the encapsulating structure with roof and multiple sidewall, and the deposited on silicon of the roof of described encapsulating structure and multiple sidewall has metal screen layer; And lead to many from described terminal pins and be connected to described sidewall and the lead-in wire be electrically connected with described metal screen layer.
Wherein, the height of multiple lead-in wires of drawing from same terminal pins is different.
Wherein, described metal level is Cu-Co-Si electro-magnetic screen layer, and the thickness of described Cu-Co-Si electro-magnetic screen layer is 2 ~ 10 μm.
Compared with prior art, the profiling shielding construction of employing wire bonding of the present invention and manufacture craft thereof have following useful technique effect:
(1) profiling shielding construction manufacture craft of the present invention uses wire bonding easily can make screen and internal circuit conducting in radio-frequency module dexterously, no longer need extra components and parts to be connected with sidewall, and this electric connection mode goes for hemisection or full cutting process.
(2) profiling shielding construction of the present invention can ensure the effective grounding of radio-frequency module screen, and it not only significantly reduces packaging cost, but also the electric property that the type product can be provided better.
Accompanying drawing explanation
Fig. 1: the structural representation of ASE electronic shield layer in prior art.
Fig. 2: the structural representation of Skyworks electronic shield layer in prior art.
Fig. 3: the planar structure schematic diagram of the substrate that profiling shielding construction manufacture craft of the present invention adopts.
Fig. 4: the cross-sectional structure schematic diagram of the substrate that profiling shielding construction manufacture craft of the present invention adopts.
Fig. 5: the structural representation of the profiling shielding construction that the present invention adopts full cutting process to prepare.
Fig. 6: the structural representation of the profiling shielding construction that the present invention adopts half cutting process to prepare.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment, the profiling shielding construction of employing wire bonding of the present invention and the preparation technology of manufacture craft and performance etc. thereof are described in detail, but accompanying drawing and specific embodiment be not as the restriction to patent of the present invention.
As shown in accompanying drawing 3 ~ 6, the present invention relates to a kind of manufacture craft adopting the profiling shielding construction of wire bonding, described manufacture craft comprises the following steps: (1) prepares the substrate it with multiple radio-frequency module unit 10, between described adjacent radio frequency modular unit 10, correspondence is provided with terminal pin 20, described many lead-in wires 30 are all arranged on described terminal pin 20, and described lead-in wire 30 is connected to ground plane 60 by the through hole be arranged on described terminal pin 20, and the terminal pin between described adjacent radio frequency modular unit is by many lead-in wire 30 bondings; (2) utilize potting resin 40 to carry out sealing to the multiple radio-frequency module unit on described substrate, and the height of described potting resin 40 is higher than the height gone between arbitrarily; (3) between adjacent radio frequency modular unit, carry out hemisection or entirely cut, lead-in wire is come out from the sidewall of potting resin; (4) at potting resin surface sputter-deposited metal level 50, and described metal level 50 contacts with described lead-in wire 30, and then makes described metal level 50 be connected to ground plane 60.In the present invention, the material of described metal level can be Cu, Al, Ni, Co, Ag, Ti or their alloy.In order to improve the electromagnetic shielding effect of metal level under 100 ~ 500MHz condition further, described metal level is preferably Cu-Co-Si electro-magnetic screen layer; And described potting resin is preferably composition epoxy resin.
electro-magnetic screen layer
Embodiment 1
In the present embodiment, described metal level is Cu-Co-Si electro-magnetic screen layer, and thick is about 2.0 μm.Described electro-magnetic screen layer is obtained by magnetron sputtering plating, and sputtering target material is Cu-Co-Si composite target material, and in described composite target material, the mass percentage of Co is the mass percentage of 32wt%, Si is 3wt%, and surplus is Cu; Sputtering technology is: take argon gas as working gas, and its flow is 100 ~ 200sccm; Sputtering power is 20kW, and coating temperature is 50 DEG C.
Embodiment 2
In the present embodiment, described metal level is Cu-Co-Si electro-magnetic screen layer, and thick is about 2.0 μm.Described electro-magnetic screen layer is obtained by magnetron sputtering plating, and sputtering target material is Cu-Co-Si composite target material, and in described composite target material, the mass percentage of Co is the mass percentage of 35wt%, Si is 6wt%, and surplus is Cu; Sputtering technology is: take argon gas as working gas, and its flow is 100 ~ 200sccm; Sputtering power is 20kW, and coating temperature is 50 DEG C.
Embodiment 3
In the present embodiment, described metal level is Cu-Co-Si electro-magnetic screen layer, and thick is about 5.0 μm.Described electro-magnetic screen layer is obtained by magnetron sputtering plating, and sputtering target material is Cu-Co-Si composite target material, and in described composite target material, the mass percentage of Co is the mass percentage of 32wt%, Si is 3wt%, and surplus is Cu; Sputtering technology is: take argon gas as working gas, and its flow is 100 ~ 200sccm; Sputtering power is 20kW, and coating temperature is 50 DEG C.
Embodiment 4
In the present embodiment, described metal level is Cu-Co-Si electro-magnetic screen layer, and thick is about 5.0 μm.Described electro-magnetic screen layer is obtained by magnetron sputtering plating, and sputtering target material is Cu-Co-Si composite target material, and in described composite target material, the mass percentage of Co is the mass percentage of 35wt%, Si is 6wt%, and surplus is Cu; Sputtering technology is: take argon gas as working gas, and its flow is 100 ~ 200sccm; Sputtering power is 20kW, and coating temperature is 50 DEG C.
Comparative example 1
In this comparative example, described metal level is Cu-Cr-Si electro-magnetic screen layer, and thick is about 5.0 μm.Described electro-magnetic screen layer is obtained by magnetron sputtering plating, and sputtering target material is Cu-Cr-Si composite target material, and in described composite target material, the mass percentage of Cr is the mass percentage of 32wt%, Si is 3wt%, and surplus is Cu; Sputtering technology is: take argon gas as working gas, and its flow is 100 ~ 200sccm; Sputtering power is 20kW, and coating temperature is 50 DEG C.
Comparative example 2
In this comparative example, described metal level is Cu-Al-Si electro-magnetic screen layer, and thick is about 5.0 μm.Described electro-magnetic screen layer is obtained by magnetron sputtering plating, and sputtering target material is Cu-Al-Si composite target material, and in described composite target material, the mass percentage of Al is the mass percentage of 32wt%, Si is 3wt%, and surplus is Cu; Sputtering technology is: take argon gas as working gas, and its flow is 100 ~ 200sccm; Sputtering power is 20kW, and coating temperature is 50 DEG C.
Comparative example 3
In this comparative example, described metal level is Cu-Co electro-magnetic screen layer, and thick is about 5.0 μm.Described electro-magnetic screen layer is obtained by magnetron sputtering plating, and sputtering target material is Cu-Co composite target material, and in described composite target material, the mass percentage of Co is 32wt%, and surplus is Cu; Sputtering technology is: take argon gas as working gas, and its flow is 100 ~ 200sccm; Sputtering power is 20kW, and coating temperature is 50 DEG C.
Comparative example 4
In this comparative example, described metal level is Ni-Co-Si electro-magnetic screen layer, and thick is about 5.0 μm.Described electro-magnetic screen layer is obtained by magnetron sputtering plating, and sputtering target material is Ni-Co-Si composite target material, and in described composite target material, the mass percentage of Co is the mass percentage of 32wt%, Si is 3wt%, and surplus is Ni; Sputtering technology is: take argon gas as working gas, and its flow is 100 ~ 200sccm; Sputtering power is 20kW, and coating temperature is 50 DEG C.
Table 1 gives plating shield layer (by lead-in wire effective grounding) the electromagnetic consumable value scope (i.e. effectiveness) respectively under 100 and 500MHz condition that embodiment 1 ~ 4 and comparative example 1 ~ 4 obtain.
Table 1
| 100MHz electromagnetic consumable (dB) | 500MHz electromagnetic consumable (dB) | |
| Embodiment 1 | 50～55 | 55～60 |
| Embodiment 2 | 50～55 | 55～60 |
| Embodiment 3 | 55～60 | 55～60 |
| Embodiment 4 | 55～60 | 55～60 |
| Comparative example 1 | 20～25 | 25～30 |
| Comparative example 2 | 15～20 | 15～20 |
| Comparative example 3 | 25～30 | 25～30 |
| Comparative example 4 | 20～25 | 25～30 |
composition epoxy resin
In the present invention, in order to improve the caking property of potting resin and profiling screen further, the potting resin used is composition epoxy resin.Described composition epoxy resin comprises following component: bisphenol-s epoxy resin (DGEBS), and its epoxide equivalent is 185 ~ 195g/mol; Styrene-maleic anhydride copolymer resin; 1-hydrogen ethyl-2-phenyl trimellitic acid imidazole salts; Calcium stearate; Silane coupler and filler.Filler described is in the present invention preferably silicon dioxide powder.In the present invention, as preferably, the content of described bisphenol-s epoxy resin is 13.5 ~ 15.0wt%, the content of styrene-maleic anhydride copolymer resin is 5.0 ~ 6.5wt%, the content of 1-hydrogen ethyl-2-phenyl trimellitic acid imidazole salts is 6.5 ~ 7.5wt%, the content of calcium stearate is 0.2 ~ 0.3wt%, and the content of silane coupler is 1.2 ~ 1.5wt%, and surplus is silicon dioxide powder.
The structural formula of bisphenol-s epoxy resin described is in the present invention as follows:
The trade mark is the 185S of U.S. Compton.Styrene-maleic anhydride copolymer resin described is in the present invention SMA2000.As what compare, the curing agent 1 used in a comparative example is anhydride curing agent GERH116H, and curing agent 2 is phenols curing agent GERH321K65.The 1-hydrogen ethyl-2-phenyl trimellitic acid imidazole salts used in the present invention is abbreviated as 2PZ-CNS, and as what compare, the imidazoles 1 used in a comparative example has following structural formula:
The imidazoles 2 used has following structural formula:
The silane coupler used in embodiments of the invention and comparative example is KH550.The silicon dioxide powder used in embodiments of the invention and comparative example is preparing spherical SiO 2 powder, and average grain diameter is 16.2 μm.
According to the proportioning of table 2 and table 3, raw material is blended together respectively, then utilizes mixing roll to carry out melting mixing, cool after coagulation and carry out pulverizing and can obtain composition epoxy resin.
Table 2
| Embodiment 5 | Embodiment 6 | Embodiment 7 | Embodiment 8 | Embodiment 9 | Embodiment 10 | |
| Bisphenol-s epoxy resin | 13.5 | 15.0 | 14.0 | 13.8 | 14.3 | 14.7 |
| SMA2000 | 5.0 | 6.5 | 6.0 | 6.2 | 5.8 | 6.3 |
| 2PZ-CNS | 7.0 | 7.0 | 7.0 | 6.8 | 7.5 | 7.1 |
| Calcium stearate | 0.20 | 0.30 | 0.25 | 0.25 | 0.28 | 0.27 |
| KH550 | 1.50 | 1.20 | 1.30 | 1.30 | 1.32 | 1.28 |
| Silicon dioxide powder | Surplus | Surplus | Surplus | Surplus | Surplus | Surplus |
Table 3
| Comparative example 5 | Comparative example 6 | Comparative example 7 | Comparative example 8 | Comparative example 9 | Comparative example 10 | |
| Bisphenol-s epoxy resin | 13.8 | 13.8 | 13.8 | 13.8 | 13.8 | 13.8 |
| SMA2000 | — | — | 13.0 | — | 6.2 | 6.2 |
| Curing agent 1 | 6.2 | — | — | — | — | — |
| Curing agent 2 | — | 6.2 | — | — | — | — |
| 2PZ-CNS | 6.8 | 6.8 | — | 13.0 | — | — |
| Imidazoles 1 | — | — | — | — | 6.8 | — |
| Imidazoles 2 | — | — | — | — | — | 6.8 |
| Calcium stearate | 0.25 | 0.25 | 0.25 | 0.25 | 0.25 | 0.25 |
| KH550 | 1.30 | 1.30 | 1.30 | 1.30 | 1.30 | 1.30 |
| Silicon dioxide powder | Surplus | Surplus | Surplus | Surplus | Surplus | Surplus |
In order to test the adhesive force of screen, carry out utilizing the composition epoxy resin of embodiment 5 ~ 10 and comparative example 5 ~ 10 encapsulating (forming temperature is 180-190 DEG C) and form the encapsulating structure surface with roof and multiple sidewall and carry out alternately hot and cold test according to the process deposits profiling screen of embodiment 1, be placed in insulating box by sample, be 80% at relative humidity RH, temperature is keep 1 hour under the condition of 100 DEG C; Then in 1 hour, be cooled to 0 DEG C, and keep 1 hour; Alternate cycles like this 30 times.Then screen is marked 100 1cm
2grid, vertically peel off after adopting adhesive tape compacting, measure screen by the area peeled off.Experimental result shows: the area that embodiment 5 ~ 10 is peeled off is 1 ~ 3%; The area that comparative example 5 ~ 10 is peeled off is more than 20%, and display adopts composition epoxy resin of the present invention display to have excellent adhesive property with profiling screen.
The foregoing is only the preferred embodiments of the present invention; can not be interpreted as limiting scope of the present invention with this, the equivalent distortion made in all scopes claimed at claims of the present invention and the execution mode of change are all in the present invention's scope required for protection.
Claims (10)
1. adopt a manufacture craft for the profiling shielding construction of wire bonding, it is characterized in that comprising the following steps:
(1) substrate it with multiple radio-frequency module unit is prepared, and by many wire bondings between described adjacent radio frequency modular unit; And the bottom of described many lead-in wires is connected to ground plane;
(2) utilize potting resin to carry out sealing to the multiple radio-frequency module unit on described substrate, and the height of described potting resin is higher than the height gone between arbitrarily;
(3) between adjacent radio frequency modular unit, carry out hemisection or entirely cut, lead-in wire is come out from the sidewall of potting resin;
(4) at potting resin surface sputter-deposited metal level, and described metal level and described wire contacts, and then make described metal level be connected to ground plane.
2. the manufacture craft of the profiling shielding construction of employing wire bonding according to claim 1, is characterized in that: the height of many lead-in wires between described adjacent radio frequency modular unit is identical or not identical.
3. the manufacture craft of the profiling shielding construction of employing wire bonding according to claim 1, it is characterized in that: between described adjacent radio frequency modular unit, correspondence is provided with terminal pin, described many lead-in wires are all arranged on described terminal pin, and described lead-in wire is connected to ground plane by the through hole be arranged on described terminal pin.
4. the manufacture craft of the profiling shielding construction of employing wire bonding according to claim 1, is characterized in that: the material of described metal level is Cu, Al, Ni, Co, Ag, Ti or their alloy.
5. the manufacture craft of the profiling shielding construction of employing wire bonding according to claim 1, is characterized in that: described metal level is Cu-Co-Si electro-magnetic screen layer, and the thickness of described Cu-Co-Si electro-magnetic screen layer is 2 ~ 10 μm.
6. the manufacture craft of the profiling shielding construction of employing wire bonding according to claim 5, it is characterized in that: described Cu-Co-Si electro-magnetic screen layer is obtained by magnetron sputtering plating, wherein, sputtering target material is Cu-Co-Si composite target material, and the mass percentage of cobalt is 32 ~ 35wt% in described composite target material, the mass percentage of silicon is 3 ~ 6wt%, and surplus is copper; Sputtering technology is: take argon gas as working gas, and its flow is 100 ~ 200sccm; Sputtering power is 18 ~ 20kW, and coating temperature is 30 ~ 50 DEG C.
7. the manufacture craft of the profiling shielding construction of employing wire bonding according to claim 1, is characterized in that: described potting resin is composition epoxy resin.
8. adopt a profiling shielding construction for wire bonding, comprise the substrate it with radio-frequency module, it is characterized in that: described radio-frequency module periphery has multiple terminal pins, the bottom electrical connection ground plane of described terminal pins; Described radio-frequency module adopts potting resin carry out encapsulating and form the encapsulating structure with roof and multiple sidewall, and the deposited on silicon of the roof of described encapsulating structure and multiple sidewall has metal screen layer; And lead to many from described terminal pins and be connected to described sidewall and the lead-in wire be electrically connected with described metal screen layer.
9. the profiling shielding construction of employing wire bonding according to claim 8, is characterized in that: from the height difference of multiple lead-in wires that same terminal pins is drawn.
10. the profiling shielding construction of employing wire bonding according to claim 8, is characterized in that: described metal level is Cu-Co-Si electro-magnetic screen layer, and the thickness of described Cu-Co-Si electro-magnetic screen layer is 2 ~ 10 μm.
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| CN201410579182.2A CN104409446A (en) | 2014-10-24 | 2014-10-24 | Conformal shielding structure applying lead bonding, and manufacture process thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108417555A (en) * | 2018-04-28 | 2018-08-17 | 上海飞骧电子科技有限公司 | A kind of the radio-frequency module structure and implementation method of anti-electromagnetic interference |
| WO2019232749A1 (en) * | 2018-06-07 | 2019-12-12 | 华为技术有限公司 | Integrated circuit |
| CN112563247A (en) * | 2021-02-24 | 2021-03-26 | 甬矽电子(宁波)股份有限公司 | Electromagnetic shielding packaging structure and electromagnetic shielding packaging method |
| US11264335B2 (en) * | 2017-06-08 | 2022-03-01 | Vanchip (Tianjin) Technology Co., Ltd. | Anti-electromagnetic interference radio frequency module and implementation method therefor |
| CN116936372A (en) * | 2023-09-04 | 2023-10-24 | 日月新半导体(苏州)有限公司 | Integrated circuit packaging method and integrated circuit packaging product |
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