CN104465691A - High-voltage light emitting diode structure and manufacture method thereof - Google Patents
High-voltage light emitting diode structure and manufacture method thereof Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 97
- 238000004020 luminiscence type Methods 0.000 claims abstract description 84
- 238000000576 coating method Methods 0.000 claims abstract description 14
- 239000011248 coating agent Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 20
- 238000000605 extraction Methods 0.000 claims description 18
- 230000004888 barrier function Effects 0.000 claims description 9
- 229910052594 sapphire Inorganic materials 0.000 claims description 8
- 239000010980 sapphire Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000009413 insulation Methods 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 3
- 239000000843 powder Substances 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 229910005540 GaP Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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Abstract
The invention provides a high-voltage light emitting diode structure and a manufacture method thereof. The high-voltage light emitting diode structure comprises the following parts: a growth substrate; multiple luminescence units which are isolated from one another by means of multiple grooves in the growth substrate and comprise N-type layers, quantum well layers, P-type layers and current extension layers which are successively laminated, N-type steps, step side walls, N pads and P pads; an insulation medium layer which covers the surfaces of the side walls of the grooves, a part of the surfaces of the N-type steps, the surfaces of the step side walls and the surfaces of the current extension layers; a reflector covering the surface of the insulation medium layer; a bridge connection structure which is connected between the N pads and the P pads of two adjacent luminescence units for realizing serial connection of the multiple luminescence units; and fluorescent powder coating the back surface of the growth substrate. According to the invention, the upside-down mounted high-voltage light emitting diode structure is realized; the fluorescent powder coats the growth substrate, the process is simple, and the coating is uniform; and the side wall and the surface of each luminescence unit are provided with the reflector, such that the light emitting efficiency is greatly improved.
Description
Technical field
The invention belongs to field of semiconductor illumination, particularly relate to a kind of high-voltage LED structure and manufacture method thereof.
Background technology
Semiconductor lighting is as new and effective solid light source, there is the remarkable advantages such as life-span length, energy-saving and environmental protection, safety, by the leap again becoming the mankind and throw light in history after incandescent lamp, fluorescent lamp, its application expands rapidly, just driving the upgrading of the industry such as traditional lighting, display, its economic benefit and social benefit huge.Just because of this, semiconductor lighting is generally regarded as one of new industry that 21 century is most with prospects, is also one of most important commanding elevation of the optoelectronic areas coming years.Light-emitting diode is by three four compounds, as GaAs(GaAs), GaP(gallium phosphide), GaAsP(gallium arsenide phosphide) etc. semiconductor make, its core is PN junction.Therefore it has the I-N characteristic of general P-N junction, i.e. forward conduction, oppositely cut-off, breakdown characteristics.In addition, under certain condition, it also has the characteristics of luminescence.Under forward voltage, electronics injects P district by N district, and N district is injected by P district in hole.Minority carrier (few son) part entering the other side region and majority carrier (how son) compound and luminous.
Light-emitting diode (LED) is a kind of is the luminescent device of luminous energy by electric energy conversion, be widely used in instruction, display, decoration, the numerous areas such as illumination, and, along with becoming increasingly conspicuous of Global Environmental Problems, and national energy-saving emission reduction targets is practicable, and LED obtains by means of its outstanding energy-conserving and environment-protective characteristic and applies more and more widely, be extended to and comprised the high-end applications such as headlight for vehicle, LCD backlight, recently started to march general illumination market.
Existing high-voltage LED structure generally can have following distinct issues:
First, in recent years due to the progress of technology and efficiency, LED application was more and more wider.Along with the upgrading of LED application, market for the demand of LED towards more high-power and more high brightness, i.e. high-capacity LED future development.For realizing high-capacity LED, the design of current high-voltage LED becomes one of solution, but because high-voltage LED required power is comparatively large, heat is comparatively concentrated, and the heat radiation of LED illumination chip is distinct issues.
Secondly, the high-voltage diode structure of existing array, because epitaxial light emission structure is divided into multiple independently luminescence unit by needs, the injection light of the luminescence unit sidewall in structure is not often used appropriately, therefore cause high-voltage diode structure light losing comparatively serious, have impact on the brightness of high-voltage diode structure widely.
Moreover, for the light-emitting diode of general front bright dipping, need at its front surface coated fluorescent material, coating fluorescent material generally realizes in encapsulation process, and be generally apply separately single light-emitting diode, such process efficiency is lower, and cost is higher, uniformity and the consistency of coating are also poor, and often affect the luminous mass of light-emitting diode.
Given this, the invention provides that a kind of can to realize upside-down mounting, brightness high and can realize the high-voltage LED structure of wafer scale coating fluorescent material, to solve, existing high-voltage LED light extraction efficiency is low, heat dissipation problem serious, fluorescent material coating lack of homogeneity, efficiency are low, high in cost of production variety of problems.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of high-voltage LED structure and manufacture method thereof, existing high-voltage LED light extraction efficiency is low for solving, heat dissipation problem is serious, fluorescent material coating lack of homogeneity, efficiency are low, high in cost of production variety of problems.
For achieving the above object and other relevant objects, the invention provides a kind of high-voltage LED structure, at least comprise:
Growth substrates;
Multiple luminescence unit, is positioned on described growth substrates, and described multiple luminescence unit by multiple until the groove of described growth substrates is mutually isolated; Wherein, described luminescence unit comprises: the N-type layer stacked gradually, quantum well layer, P-type layer and current extending; Eliminate the N-type step and mesa sidewall that are formed near the portion of electrical current extension layer of groove side, P-type layer, quantum well layer and part N-type layer; Be incorporated into the N pad of described N-type ledge surface; And be incorporated into the P pad on described current extending surface;
Insulating medium layer, is covered in described trench sidewall surface, N-type step part surface, mesa sidewall is surperficial and current extending is surperficial;
Speculum, is covered in described insulating medium layer surface;
Bridging structure, between the N pad being connected to two adjacent luminescence units and P pad, realizes the series connection of multiple luminescence unit;
Fluorescent material, is coated on the back side of described growth substrates.
As a kind of preferred version of high-voltage LED structure of the present invention, described high-voltage LED also comprises a N pad extraction electrode, is drawn by the N pad of multiple luminescence unit terminals of series connection by the N electrode through hole being through to described groove from the described growth substrates back side from the back side of described growth substrates.
As a kind of preferred version of high-voltage LED structure of the present invention, respectively between this luminescence unit and respectively this luminescence unit surface deposition has insulant.
As a kind of preferred version of high-voltage LED structure of the present invention, described high-voltage LED also comprises a thermal conductive substrate, is fixed on respectively above this luminescence unit; And a P pad extraction electrode, by from the P electrode through hole running through described thermal conductive substrate, the P pad at multiple luminescence unit tops of series connection is drawn from described thermal conductive substrate.
As a kind of preferred version of high-voltage LED structure of the present invention, described groove is V-type groove, U-type groove, rectangular channel or inverted trapezoidal groove.
As a kind of preferred version of high-voltage LED structure of the present invention, described bridging structure comprises the insulating barrier that is incorporated into described mirror surface and is incorporated into described surface of insulating layer and is connected to the metal level between the N pad of two adjacent luminescence units and P pad.
As a kind of preferred version of high-voltage LED structure of the present invention, respectively this P pad insulate by insulative sidewall and described speculum and isolates, and respectively this N pad insulate by insulative sidewall and described speculum and isolates.
As a kind of preferred version of high-voltage LED structure of the present invention, described growth substrates is Sapphire Substrate, and described N-type layer is N-GaN layer, and described quantum well layer is InGaN/GaN multiple quantum well layer, described P-type layer is P-GaN layer, and described current extending is ITO transparency conducting layer.
The present invention also provides a kind of manufacture method of high-voltage LED structure, comprises the following steps:
1) growth substrates is provided, forms N-type layer, quantum well layer, P-type layer and current extending successively in described growth substrates surface;
2) to etch by described current extending to described growth substrates and spaced multiple groove, be separated out multiple separate unit;
3) N-type layer removing the current extending of part, P-type layer, quantum well layer and part near groove side in each this separate unit forms N-type step and mesa sidewall;
4) in described flute surfaces, N-type ledge surface, mesa sidewall surface and the surperficial formation insulating medium layer of current extending, and speculum is formed in described insulating medium layer surface;
5) form P pad respectively at the speculum of described current extending and N-type ledge surface removal part and insulating medium layer and prepare region and N pad prepares region, and prepare region in described P pad and prepare P pad, prepare region in described N pad and prepare N pad, complete the preparation of multiple luminescence unit;
6) between the N pad and P pad of adjacent two luminescence units, make bridging structure, realize the series connection of multiple luminescence unit;
7) in described growth substrates backside coating fluorescent material.
As a kind of preferred version of the manufacture method of high-voltage LED structure of the present invention, also comprise step after step 6): etch the N electrode through hole being through to described groove from the described growth substrates back side, and make the N pad extraction electrode of being drawn from the back side of described growth substrates by the N pad of multiple luminescence unit terminals of series connection by this N electrode through hole.
As a kind of preferred version of the manufacture method of high-voltage LED structure of the present invention, after step 6), also comprise step: in each between this luminescence unit and each this luminescence unit surface deposition insulant.
As a kind of preferred version of the manufacture method of high-voltage LED structure of the present invention, also step is comprised: each this luminescence unit is fixed on a thermal conductive substrate after step 6), and etch the P electrode through hole running through described thermal conductive substrate, the P pad extraction electrode of being drawn from described thermal conductive substrate by the P pad at multiple luminescence unit tops of series connection is made by this P electrode through hole.
As a kind of preferred version of the manufacture method of high-voltage LED structure of the present invention, described groove is V-type groove, U-type groove, rectangular channel or inverted trapezoidal groove.
As a kind of preferred version of the manufacture method of high-voltage LED structure of the present invention, step 5) also comprises step: make insulative sidewall in each this P pad both sides mat, isolate to make itself and described speculum insulate, and make insulative sidewall in each these N pad both sides, isolate to make itself and described speculum insulate.
As a kind of preferred version of the manufacture method of high-voltage LED structure of the present invention, the bridging structure made by step 6) comprises the insulating barrier that is incorporated into described mirror surface and is incorporated into described surface of insulating layer and is connected to the metal level between the N pad of two adjacent luminescence units and P pad.
As mentioned above, the invention provides a kind of high-voltage LED structure and manufacture method thereof, comprising: growth substrates; Multiple luminescence unit, is positioned on described growth substrates, and described multiple luminescence unit by multiple until the groove of described growth substrates is mutually isolated; Wherein, described luminescence unit comprises: the N-type layer stacked gradually, quantum well layer, P-type layer and current extending, N-type step and mesa sidewall, N pad and P pad; Insulating medium layer, is covered in described flute surfaces, N-type ledge surface, mesa sidewall surface and current extending surperficial; Speculum, is covered in described insulating medium layer surface; Bridging structure, between the N pad being connected to two adjacent luminescence units and P pad, realizes the series connection of multiple luminescence unit; Fluorescent material, is coated on the back side of described growth substrates.Present invention achieves a kind of array type high-voltage LED structure of upside-down mounting; Fluorescent material is coated on growth substrates, and technique is simple, and coating evenly; Respectively this luminescence unit sidewall and surface are all manufactured with speculum, substantially increase light extraction efficiency; The present invention and traditional handicraft compatibility, be applicable to industrial production.
Accompanying drawing explanation
Fig. 1 is shown as the structural representation of high-voltage LED of the present invention.
The structural representation that the manufacture method step 1) that Fig. 2 is shown as high-voltage LED of the present invention presents.
Fig. 3 is shown as the manufacture method step 2 of high-voltage LED of the present invention) structural representation that presents.
The structural representation that the manufacture method step 3) that Fig. 4 is shown as high-voltage LED of the present invention presents.
The structural representation that the manufacture method step 4) that Fig. 5 is shown as high-voltage LED of the present invention presents.
The structural representation that the manufacture method step 5) that Fig. 6 ~ Fig. 7 is shown as high-voltage LED of the present invention presents.
The structural representation that the manufacture method step 6) that Fig. 8 ~ Figure 11 is shown as high-voltage LED of the present invention presents.
The structural representation that the manufacture method step 7) that Figure 12 is shown as high-voltage LED of the present invention presents.
Element numbers explanation
101 growth substrates
102 N-type layer
103 quantum well layers
104 P-type layer
105 current extendings
106 grooves
107 N-type steps
108 mesa sidewall
109 insulating medium layers
110 speculums
111 P pads prepare region
112 N pads prepare region
113 P pads
114 N pads
115 insulative sidewalls
116 insulating barriers
117 metal levels
118 electrode through holes
119 N pad extraction electrodes
120 insulants
121 fluorescent material
122 thermal conductive substrate
123 P electrode through holes
124 P pad extraction electrodes
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this specification can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to Fig. 1 ~ Figure 12.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
As shown in Figure 1, the present embodiment provides a kind of high-voltage LED structure, at least comprises:
Growth substrates 101;
Multiple luminescence unit, is positioned on described growth substrates 101, and described multiple luminescence unit by multiple until the groove 106 of described growth substrates 101 is mutually isolated; Wherein, described luminescence unit comprises: the N-type layer 102 stacked gradually, quantum well layer 103, P-type layer 104 and current extending 105; Eliminate the N-type step 107 and mesa sidewall 108 that are formed near the portion of electrical current extension layer 105 of groove 106 side, P-type layer 104, quantum well layer 103 and part N-type layer 102; Be incorporated into the N pad 114 on described N-type step 107 surface; And be incorporated into the P pad 113 on described current extending 105 surface;
Insulating medium layer 109, is covered in described groove 106 sidewall surfaces, N-type step 107 part surface, mesa sidewall 108 surface and current extending 105 surface;
Speculum 110, is covered in described insulating medium layer 109 surface;
Bridging structure, between the N pad 114 being connected to two adjacent luminescence units and P pad, realizes the series connection of multiple luminescence unit;
Fluorescent material 121, is coated on the back side of described growth substrates 101.
Described growth substrates 101 can be Sapphire Substrate, graphical sapphire substrate, SiC substrate, GaN substrate etc., and in the present embodiment, described growth substrates 101 is Sapphire Substrate.
Described multiple luminescence unit by multiple until the groove 106 of described growth substrates 101 is mutually isolated, described groove 106 can be V-type groove, U-type groove, rectangular channel or inverted trapezoidal groove, can maintain an equal level with described growth substrates 101 bottom it, also can extend to the degree of depth that described growth substrates 101 is certain.In the present embodiment, described groove 106 is V-type groove, for extending to described growth substrates 101 certain depth bottom it, to ensure that this luminescence unit is completely isolated.Certainly, in other embodiments, the shape of described groove 106 can change according to the actual requirements, is not limited to cited several herein.
Described N-type layer 102 is N-GaN layer, and described quantum well layer 103 is InGaN/GaN multiple quantum well layer 103, and described P-type layer 104 is P-GaN layer.Certainly, in other embodiments, described epitaxial light emission structure can adopt as epitaxial light emission structures such as GaAs base, GaP bases, and be not limited thereto that place enumerates several.
Described current extending 105 is ITO transparency conducting layer, certainly, also can be the transparency conducting layer of other type.
Described insulating medium layer 109 is covered in described groove 106 surface, N-type step 107 surface, mesa sidewall 108 surface and current extending 105 surface, and described speculum 110 is covered in described insulating medium layer 109 surface.In the present embodiment, described insulating medium layer 109 and described speculum 110 do not contact with described N pad 114 and P pad 113, but, respectively this P pad 113 insulate by insulative sidewall 115 and described speculum 110 and isolates, and respectively this N pad 114 insulate by insulative sidewall 115 and described speculum 110 and isolates.Certainly, as long as the present invention prevents described speculum 110 from contacting with the P pad 113 of same luminescence unit and N pad 114 simultaneously simultaneously, to prevent short circuit, therefore, the program also can be do not make insulative sidewall 115 at described P pad 113 and N pad 114 side, and only need remove the speculum 110 near described N pad 114 and P pad 113 in certain limit.
Described bridging structure comprises the insulating barrier 116 that is incorporated into described speculum 110 surface and is incorporated into described insulating barrier 116 surface and the metal level 117 be connected between the N pad 114 of two adjacent luminescence units and P pad 113.It should be noted that, the bridging structure that this place adopts must ensure to keep state of insulation with described speculum 110.Certainly, in the production process of enforcement, described bridging structure also can realize in other way, is not limited to cited one herein.
Described fluorescent material 121 is coated on the back side of described growth substrates 101.The back side due to described growth substrates 101 is flat face, and the coating processes of fluorescent material 121 is very simple, and can apply very even.
The high-voltage LED of above structure, by the connecting line technics of routine with after fixing, just its function can be realized, but, consider the factor such as simplification and radiating effect of Electrode connection, in the present embodiment, further improvement has been carried out to described high-voltage LED.
As shown in figure 12, described high-voltage LED also comprises a N pad extraction electrode 119, is drawn by the N pad 114 of multiple luminescence unit terminals of series connection by the N electrode through hole 118 being through to described groove 106 from described growth substrates 101 back side from the back side of described growth substrates 101.
In the present embodiment, respectively between this luminescence unit and respectively this luminescence unit surface deposition has insulant 120, and in the present embodiment, described insulant 120 can maintain an equal level with the upper surface of each this P pad 113, also can cover respectively this P pad 113 completely.Described high-voltage LED also comprises a thermal conductive substrate 122, is fixed on respectively above this luminescence unit; And a P pad extraction electrode 124, by from the P electrode through hole 123 running through described thermal conductive substrate 122, the P pad 113 at multiple luminescence unit tops of series connection is drawn from described thermal conductive substrate 122, realize the upside-down mounting of high-voltage LED.
As shown in Fig. 2 ~ Figure 12, the present embodiment also provides a kind of manufacture method of high-voltage LED structure, comprises the following steps:
As shown in Figure 2, first carry out step 1), a growth substrates 101 is provided, form N-type layer 102, quantum well layer 103, P-type layer 104 and current extending 105 successively in described growth substrates 101 surface.
Exemplarily, described growth substrates 101 can be Sapphire Substrate, graphical sapphire substrate, SiC substrate, GaN substrate etc., and in the present embodiment, described growth substrates 101 is Sapphire Substrate.
In the present embodiment, adopt chemical vapour deposition technique to make described N-type layer 102, quantum well layer 103, P-type layer 104, described N-type layer 102 is N-GaN layer, and described quantum well layer 103 is InGaN/GaN multiple quantum well layer 103, and described P-type layer 104 is P-GaN layer.Certainly, in other embodiments, described epitaxial light emission structure can adopt as epitaxial light emission structures such as GaAs base, GaP bases, and be not limited thereto that place enumerates several.
In the present embodiment, adopt sputtering method to make described current extending 105, described current extending 105 is ITO transparency conducting layer, certainly, also can be the transparency conducting layer of other type.
As shown in Figure 3, then carry out step 2), to etch by described current extending 105 to described growth substrates 101 and spaced multiple groove 106, be separated out multiple separate unit.
Exemplarily, make prior to described current extending 105 surface and there is the photoetching offset plate figure being spaced etching window, then adopt ICP etching method to etch multiple groove 106.In the present embodiment, described groove 106 can be V-type groove, U-type groove, rectangular channel or inverted trapezoidal groove, can maintain an equal level, also can extend to the degree of depth that described growth substrates 101 is certain bottom it with described growth substrates 101.In the present embodiment, described groove 106 is V-type groove, for extending to described growth substrates 101 certain depth bottom it, to ensure that this luminescence unit is completely isolated.Certainly, in other embodiments, the shape of described groove 106 can change according to the actual requirements, is not limited to cited several herein.
As shown in Figure 4, then carry out step 3), form N-type step 107 and mesa sidewall 108 in each this separate unit near the N-type layer 102 of the current extending 105 of groove 106 side removal part, P-type layer 104, quantum well layer 103 and part.
Exemplarily, ICP etching method is adopted to form N-type step 107 and mesa sidewall 108 in each this separate unit near the N-type layer 102 of the current extending 105 of groove 106 side removal part, P-type layer 104, quantum well layer 103 and part.
As shown in Figure 5, then carry out step 4), form insulating medium layer 109 in described groove 106 surface, N-type step 107 surface, mesa sidewall 108 surface and current extending 105 surface, and form speculum 110 in described insulating medium layer 109 surface.
Exemplarily, adopt chemical vapour deposition technique to form insulating medium layer 109 in described groove 106 surface, N-type step 107 surface, mesa sidewall 108 surface and current extending 105 surface, in the present embodiment, described insulating medium layer 109 is silicon dioxide layer.Then adopt sputtering method to make speculum 110 in described insulating medium layer 109 surface, in the present embodiment, described speculum 110 is argent speculum 110.
As shown in Fig. 6 ~ Fig. 7, then step 5) is carried out, form P pad respectively at the speculum 110 of described current extending 105 and N-type step 107 surface removal part and insulating medium layer 109 and prepare region 111 and N pad prepares region 112, and prepare region 111 in described P pad and prepare P pad 113, prepare region 112 in described N pad and prepare N pad 114, complete the preparation of multiple luminescence unit.
Exemplarily, also comprise step: make insulative sidewall 115 in each this P pad 113 both sides mat, isolate to make its and described speculum 110 insulate, and in each these N pad 114 both sides making insulative sidewall 115, isolate to make itself and described speculum 110 insulate.Certainly, as long as the present invention prevents described speculum 110 from contacting with the P pad 113 of same luminescence unit and N pad 114 simultaneously simultaneously, to prevent short circuit, therefore, the program also can be do not make insulative sidewall 115 at described P pad 113 and N pad 114 side, and only need remove the speculum 110 near described N pad 114 and P pad 113 in certain limit.
As shown in Fig. 8 ~ Figure 11, then carry out step 6), between the N pad 114 and P pad 113 of adjacent two luminescence units, make bridging structure, realize the series connection of multiple luminescence unit.
As shown in Figure 8, exemplarily, described bridging structure comprises the insulating barrier 116 that is incorporated into described speculum 110 surface and is incorporated into described insulating barrier 116 surface and the metal level 117 be connected between the N pad 114 of two adjacent luminescence units and P pad 113.It should be noted that, the bridging structure that this place adopts must ensure to keep state of insulation with described speculum 110.Certainly, in the production process of enforcement, described bridging structure also can realize in other way, is not limited to cited one herein.
As shown in Figure 9, exemplarily, this step also comprises step: etch the N electrode through hole 118 being through to described groove 106 from described growth substrates 101 back side, and makes the N pad extraction electrode 119 of being drawn from the back side of described growth substrates 101 by the N pad 114 of multiple luminescence unit terminals of series connection by this N electrode through hole 118.
As shown in Figure 10, exemplarily, this step is also included in respectively the step of between this luminescence unit and respectively this luminescence unit surface deposition insulant 120, and described insulant 120 can maintain an equal level with the upper surface of each this P pad 113, also can cover respectively this P pad 113 completely.
As shown in figure 11, exemplarily, this step also comprises step: each this luminescence unit is fixed on a thermal conductive substrate 122, and etch the P electrode through hole 123 running through described thermal conductive substrate 122, make the P pad extraction electrode 124 of being drawn from described thermal conductive substrate 122 by the P pad 113 at multiple luminescence unit tops of series connection by this P electrode through hole 123, realize the upside-down mounting of high-voltage LED.
As shown in figure 12, finally carry out step 7), in described growth substrates 101 backside coating fluorescent material 121.
Described fluorescent material 121 is coated on the back side of described growth substrates 101.The back side due to described growth substrates 101 is flat face, and the coating processes of fluorescent material 121 is very simple, and can apply very even.
As mentioned above, the invention provides a kind of high-voltage LED structure and manufacture method thereof, at least comprise: growth substrates 101; Multiple luminescence unit, is positioned on described growth substrates 101, and described multiple luminescence unit by multiple until the groove 106 of described growth substrates 101 is mutually isolated; Wherein, described luminescence unit comprises: the N-type layer 102 stacked gradually, quantum well layer 103, P-type layer 104 and current extending 105, N-type step 107 and mesa sidewall 108, N pad 114 and P pad 113; Insulating medium layer 109, is covered in described groove 106 sidewall surfaces, N-type step 107 part surface, mesa sidewall 108 surface and current extending 105 surface; Speculum 110, is covered in described insulating medium layer 109 surface; Bridging structure, between the N pad 114 being connected to two adjacent luminescence units and P pad, realizes the series connection of multiple luminescence unit; Fluorescent material 121, is coated on the back side of described growth substrates 101.Present invention achieves a kind of array type high-voltage LED structure of upside-down mounting; Fluorescent material is coated on growth substrates, and technique is simple, and coating evenly; Respectively this luminescence unit sidewall and surface are all manufactured with speculum, substantially increase light extraction efficiency; The present invention and traditional handicraft compatibility, be applicable to industrial production.So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (15)
1. a high-voltage LED structure, is characterized in that, at least comprises:
Growth substrates;
Multiple luminescence unit, is positioned on described growth substrates, and described multiple luminescence unit by multiple until the groove of described growth substrates is mutually isolated; Wherein, described luminescence unit comprises: the N-type layer stacked gradually, quantum well layer, P-type layer and current extending; Eliminate the N-type step and mesa sidewall that are formed near the portion of electrical current extension layer of groove side, P-type layer, quantum well layer and part N-type layer; Be incorporated into the N pad of described N-type ledge surface; And be incorporated into the P pad on described current extending surface;
Insulating medium layer, is covered in described trench sidewall surface, N-type step part surface, mesa sidewall is surperficial and current extending is surperficial;
Speculum, is covered in described insulating medium layer surface;
Bridging structure, between the N pad being connected to two adjacent luminescence units and P pad, realizes the series connection of multiple luminescence unit;
Fluorescent material, is coated on the back side of described growth substrates.
2. high-voltage LED structure according to claim 1, it is characterized in that: also comprise a N pad extraction electrode, by the N electrode through hole being through to described groove from the described growth substrates back side, the N pad of multiple luminescence unit terminals of series connection is drawn from the back side of described growth substrates.
3. high-voltage LED structure according to claim 1, is characterized in that: respectively between this luminescence unit and respectively this luminescence unit surface deposition has insulant.
4. high-voltage LED structure according to claim 1, is characterized in that: also comprise a thermal conductive substrate, is fixed on respectively above this luminescence unit; And a P pad extraction electrode, by from the P electrode through hole running through described thermal conductive substrate, the P pad at multiple luminescence unit tops of series connection is drawn from described thermal conductive substrate.
5. high-voltage LED structure according to claim 1, is characterized in that: described groove is V-type groove, U-type groove, rectangular channel or inverted trapezoidal groove.
6. high-voltage LED structure according to claim 1, is characterized in that: described bridging structure comprises the insulating barrier that is incorporated into described mirror surface and is incorporated into described surface of insulating layer and is connected to the metal level between the N pad of two adjacent luminescence units and P pad.
7. high-voltage LED structure according to claim 1, is characterized in that: respectively this P pad insulate by insulative sidewall and described speculum and isolates, and respectively this N pad insulate by insulative sidewall and described speculum and isolates.
8. high-voltage LED structure according to claim 1, it is characterized in that: described growth substrates is Sapphire Substrate, described N-type layer is N-GaN layer, described quantum well layer is InGaN/GaN multiple quantum well layer, described P-type layer is P-GaN layer, and described current extending is ITO transparency conducting layer.
9. a manufacture method for high-voltage LED structure, is characterized in that, comprises the following steps:
1) growth substrates is provided, forms N-type layer, quantum well layer, P-type layer and current extending successively in described growth substrates surface;
2) to etch by described current extending to described growth substrates and spaced multiple groove, be separated out multiple separate unit;
3) N-type layer removing the current extending of part, P-type layer, quantum well layer and part near groove side in each this separate unit forms N-type step and mesa sidewall;
4) in described flute surfaces, N-type ledge surface, mesa sidewall surface and the surperficial formation insulating medium layer of current extending, and speculum is formed in described insulating medium layer surface;
5) form P pad respectively at the speculum of described current extending and N-type ledge surface removal part and insulating medium layer and prepare region and N pad prepares region, and prepare region in described P pad and prepare P pad, prepare region in described N pad and prepare N pad, complete the preparation of multiple luminescence unit;
6) between the N pad and P pad of adjacent two luminescence units, make bridging structure, realize the series connection of multiple luminescence unit;
7) in described growth substrates backside coating fluorescent material.
10. the manufacture method of high-voltage LED structure according to claim 9, it is characterized in that: after step 6), also comprise step: etch the N electrode through hole being through to described groove from the described growth substrates back side, and make the N pad extraction electrode of being drawn from the back side of described growth substrates by the N pad of multiple luminescence unit terminals of series connection by this N electrode through hole.
The manufacture method of 11. high-voltage LED structures according to claim 9, is characterized in that: also comprise step after step 6): in each between this luminescence unit and each this luminescence unit surface deposition insulant.
The manufacture method of 12. high-voltage LED structures according to claim 9, it is characterized in that: after step 6), also comprise step: each this luminescence unit is fixed on a thermal conductive substrate, and etch the P electrode through hole running through described thermal conductive substrate, the P pad extraction electrode of being drawn from described thermal conductive substrate by the P pad at multiple luminescence unit tops of series connection is made by this P electrode through hole.
The manufacture method of 13. high-voltage LED structures according to claim 9, is characterized in that: described groove is V-type groove, U-type groove, rectangular channel or inverted trapezoidal groove.
The manufacture method of 14. high-voltage LED structures according to claim 9, it is characterized in that: step 5) also comprises step: make insulative sidewall in each this P pad both sides mat, isolate to make itself and described speculum insulate, and make insulative sidewall in each these N pad both sides, isolate to make itself and described speculum insulate.
The manufacture method of 15. high-voltage LED structures according to claim 9, is characterized in that: the bridging structure made by step 6) comprises the insulating barrier that is incorporated into described mirror surface and is incorporated into described surface of insulating layer and is connected to the metal level between the N pad of two adjacent luminescence units and P pad.
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