CN104480445A - Aluminum alloy target and preparation method thereof - Google Patents
Aluminum alloy target and preparation method thereof Download PDFInfo
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- CN104480445A CN104480445A CN201410842610.6A CN201410842610A CN104480445A CN 104480445 A CN104480445 A CN 104480445A CN 201410842610 A CN201410842610 A CN 201410842610A CN 104480445 A CN104480445 A CN 104480445A
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- 229910000838 Al alloy Inorganic materials 0.000 title claims abstract description 41
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 238000000137 annealing Methods 0.000 claims description 24
- 238000005096 rolling process Methods 0.000 claims description 21
- 238000005266 casting Methods 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 12
- 239000004411 aluminium Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- PTVDYARBVCBHSL-UHFFFAOYSA-N copper;hydrate Chemical compound O.[Cu] PTVDYARBVCBHSL-UHFFFAOYSA-N 0.000 claims description 7
- 238000003754 machining Methods 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000000265 homogenisation Methods 0.000 claims description 6
- 230000006698 induction Effects 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 238000002791 soaking Methods 0.000 claims description 6
- 238000007514 turning Methods 0.000 claims description 6
- 238000010792 warming Methods 0.000 claims description 6
- 238000005275 alloying Methods 0.000 claims description 4
- 229910052779 Neodymium Inorganic materials 0.000 claims description 3
- 229910052771 Terbium Inorganic materials 0.000 claims description 3
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 3
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 3
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 2
- 229910052691 Erbium Inorganic materials 0.000 claims description 2
- 229910052693 Europium Inorganic materials 0.000 claims description 2
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- 229910052689 Holmium Inorganic materials 0.000 claims description 2
- 229910052765 Lutetium Inorganic materials 0.000 claims description 2
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 2
- 229910052773 Promethium Inorganic materials 0.000 claims description 2
- 229910052772 Samarium Inorganic materials 0.000 claims description 2
- 229910052775 Thulium Inorganic materials 0.000 claims description 2
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000000470 constituent Substances 0.000 claims description 2
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 claims description 2
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims description 2
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 2
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 2
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 claims description 2
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 claims description 2
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 claims description 2
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052706 scandium Inorganic materials 0.000 claims description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 2
- 239000011800 void material Substances 0.000 claims description 2
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims description 2
- 238000001816 cooling Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 abstract description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 238000005242 forging Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003913 materials processing Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
The invention belongs to the technical field of material processing, and in particular relates to an aluminum alloy target and preparation method of the aluminum alloy target. The purity of the aluminum alloy target is 99.99-99.9999 percent, the average grain diameter is 1-100 micrometers, the relative density is 99-100 percent, and 0-50 internal holes have the maximum size of 0.1-2 mm per square meter. The aluminum alloy target prepared by using the method has the characteristic of high purity; the aluminum alloy target is poured by using a copper water-cooling mould, so that the utilization rate of the material can be effectively increased; because of high cooling speed, the quantity of target branch crystals is relatively reduced.
Description
Technical field
The invention belongs to materials processing technology field, be specifically related to a kind of aluminium alloy target and preparation method thereof.
Background technology
The method of general employing magnetron sputtering carrys out the film that deposit manufacture forms liquid crystal board and organic field luminescence plate, this liquid crystal board and organic field luminescence plate are used for flat panel TV, in notebook computer and other watch-dogs, and for the manufacture of the connection film in optical recording and semiconductor microelectronics field.In magnetron sputtering process, the general planar target adopting rectangle or circle, the requirement on machining accuracy of usual this target is higher, have specific texture and purity density higher.Aluminium alloy target is exactly such target, for the connection film in deposit manufacture liquid crystal board and organic field luminescence plate.
Summary of the invention
The object of this invention is to provide a kind of aluminium alloy target, purity be high, dentrite comparatively small amt; Invention also provides the preparation method of aluminium alloy target, scientific and reasonable, simple.
The purity of aluminium alloy target of the present invention is 99.99-99.9999%, and median size is 1-100 micron, and relative density is 99-100%, and inner void overall dimension is every square metre of 0.1-2mm and is 0-50.
Described alloying element is one or more in lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, scandium or yttrium.
The constituent content of described alloying element is the 0.1-20wt% of aluminium alloy target total mass.
The preparation method of aluminium alloy target of the present invention, step is as follows:
(1) aluminium ingot and metal alloy are cut into slice, then ultrasonic surface cleaning, dries, and weighs shove charge, body of heater is evacuated to 0.01Pa level, alumina crucible heats up, vacuum intermediate-frequency induction melting, have a power failure, copper water cooled mo(u)ld casts ingot casting, cold with stove, vacuum breaker gets ingot;
(2) high temperature eliminates casting stress homogenization of composition anneal, insulation, then aluminum alloy ingot surface turning strip off the skin, the shrinkage cavity of crop portion;
(3) be heated to 300-600 DEG C, forge hot is beaten to thickness 15-30mm, and temperature need heat once again lower than when 350 DEG C;
(4) be heated to 300-500 DEG C, rolling process, temperature need heat once again lower than when 350 DEG C;
(5) carry out stress relief annealing, then machining obtains the aluminium alloy target product of specified size;
(6) ultrasonic nondestructive test is carried out to target, measure its composition, purity, grain size, density parameter.
800-1000 DEG C is warming up to described in step (1).
Annealing temperature described in step (2) is 200-400 DEG C.
Soaking time 2-5 hour described in step (2).
The temperature that forges described in step (3) is 350-460 DEG C.
The pass deformation rate of the rolling described in step (4) is 10-30%, and rolling temperature is 350-420 DEG C.
Annealing temperature described in step (5) is 200-400 DEG C, and annealing time is 2-5 hour.
The preparation method of aluminium alloy target of the present invention, concrete steps are as follows:
(1) aluminium ingot and metal alloy are cut into slice, then ultrasonic surface cleaning, dry, weigh shove charge, body of heater is evacuated to 0.01Pa level, alumina crucible is warming up to 800-1000 DEG C, vacuum intermediate-frequency induction melting, have a power failure, copper water cooled mo(u)ld casts ingot casting, cold with stove, vacuum breaker gets ingot;
(2) high temperature eliminates casting stress homogenization of composition anneal, and annealing temperature is 200-400 DEG C, soaking time 2-5 hour, then aluminum alloy ingot surface turning strip off the skin, the shrinkage cavity of crop portion
(3) be heated to 300-600 DEG C of forge hot beat to thickness 15-30mm, forging temperature is 350 DEG C to 460 DEG C, and temperature need heat once again lower than when 350 DEG C;
(4) be heated to 300-500 DEG C, rolling process, the pass deformation rate of rolling is 10%-30%, and rolling temperature is 350 DEG C to 420 DEG C, and temperature need heat once again lower than when 350 DEG C;
(5) carry out stress relief annealing, annealing temperature is 200-400 DEG C, and annealing time is 2-5 hour, and then machining obtains the aluminium alloy target product of specified size;
(6) ultrasonic nondestructive test is carried out to target, measure the parameters such as its composition, purity, grain size, density.
Aluminium alloy target generally adopts the method manufacture of vacuum casting, and in order to obtain uniform tissue, tiny crystal grain and high density, general cooperation forges rolling process.
The present invention obtains high-purity compact, the aluminium alloy target product that grain fineness number is less than 200 microns, is applicable to flat pannel display plated film industry and uses.
The present invention compared with prior art, has following beneficial effect:
(1) the aluminium alloy target of manufacture of the present invention has highly purified feature;
(2) the aluminium alloy target of manufacture of the present invention adopts copper water cooling mold to cast, and effectively can improve the utilization ratio of material;
(3) the aluminium alloy target that manufactures of the present invention due to speed of cooling fast, target dentrite comparatively small amt;
(4) the present invention is used in and manufactures large-scale target and tubular target.
Accompanying drawing explanation
Fig. 1 is the target metallograph that embodiment 1 does not carry out forging rolling process.
Fig. 2 is that embodiment 1 has carried out the target metallograph forging rolling process.
Embodiment
Below in conjunction with embodiment, the present invention is described further.
Embodiment 1
(1) aluminium ingot and neodymium metal are cut into slice, then ultrasonic surface cleaning, dries, and weighs shove charge, body of heater is evacuated to 0.01Pa level, alumina crucible is warming up to 800 DEG C, vacuum intermediate-frequency induction melting, have a power failure, copper water cooled mo(u)ld casts ingot casting, cold with stove, vacuum breaker gets ingot;
(2) high temperature eliminates casting stress homogenization of composition anneal, and annealing temperature is 200 DEG C, soaking time 2 hours, then aluminum alloy ingot surface turning strip off the skin, the shrinkage cavity of crop portion
(3) be heated to 400 DEG C of forge hots beat to thickness 15mm, forging temperature is 350 DEG C to 460 DEG C, and temperature need heat once again lower than when 350 DEG C;
(4) be heated to 400 DEG C, rolling process, the pass deformation rate of rolling is 10%, and rolling temperature is 350 DEG C to 420 DEG C, and temperature need heat once again lower than when 350 DEG C;
(5) carry out stress relief annealing, annealing temperature is 300 DEG C, and annealing time is 2 hours, and then machining obtains the aluminium target product of specified size;
(6) ultrasonic nondestructive test is carried out to target, measure the parameters such as its composition, purity, grain size, density.The results are shown in Table 1.
Embodiment 2
(1) aluminium ingot and terbium metal are cut into slice, then ultrasonic surface cleaning, dries, and weighs shove charge, body of heater is evacuated to 0.01Pa level, alumina crucible is warming up to 1000 DEG C, vacuum intermediate-frequency induction melting, have a power failure, copper water cooled mo(u)ld casts ingot casting, cold with stove, vacuum breaker gets ingot;
(2) high temperature eliminates casting stress homogenization of composition anneal, and annealing temperature is 400 DEG C, soaking time 5 hours, then aluminum alloy ingot surface turning strip off the skin, the shrinkage cavity of crop portion
(3) be heated to 600 DEG C of forge hots beat to thickness 30mm, forging temperature is 350 DEG C to 460 DEG C, and temperature need heat once again lower than when 350 DEG C;
(4) be heated to 500 DEG C, rolling process, the pass deformation rate of rolling is 30%, and rolling temperature is 350 DEG C to 420 DEG C, and temperature need heat once again lower than when 350 DEG C;
(5) carry out stress relief annealing, annealing temperature is 400 DEG C, and annealing time is 5 hours, and then machining obtains the aluminium target product of specified size;
(6) ultrasonic nondestructive test is carried out to target, measure the parameters such as its composition, purity, grain size, density.The results are shown in Table 1.
Embodiment 3
(1) aluminium ingot and metallic yttrium block are cut into slice, then ultrasonic surface cleaning, dries, and weighs shove charge, body of heater is evacuated to 0.01Pa level, alumina crucible is warming up to 850 DEG C, vacuum intermediate-frequency induction melting, have a power failure, copper water cooled mo(u)ld casts ingot casting, cold with stove, vacuum breaker gets ingot;
(2) high temperature eliminates casting stress homogenization of composition anneal, and annealing temperature is 350 DEG C, soaking time 3 hours, then aluminum alloy ingot surface turning strip off the skin, the shrinkage cavity of crop portion
(3) be heated to 450 DEG C of forge hots beat to thickness 20mm, forging temperature is 350 DEG C to 460 DEG C, and temperature need heat once again lower than when 350 DEG C;
(4) be heated to 450 DEG C, rolling process, the pass deformation rate of rolling is 20%, and rolling temperature is 350 DEG C to 420 DEG C, and temperature need heat once again lower than when 350 DEG C;
(5) carry out stress relief annealing, annealing temperature is 320 DEG C, and annealing time is 3 hours, and then machining obtains the aluminium target product of specified size;
(6) ultrasonic nondestructive test is carried out to target, measure the parameters such as its composition, purity, grain size, density.The results are shown in Table 1.
Table 1 embodiment 1-3 target performance
Claims (10)
1. an aluminium alloy target, it is characterized in that the purity of described aluminium alloy target is 99.99-99.9999%, median size is 1-100 micron, and relative density is 99-100%, and inner void overall dimension is every square metre of 0.1-2mm and is 0-50.
2. aluminium alloy target according to claim 1, is characterized in that described alloying element is one or more in lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, scandium or yttrium.
3. aluminium alloy target according to claim 1, is characterized in that the constituent content of described alloying element is the 0.1-20wt% of aluminium alloy target total mass.
4. a preparation method for the arbitrary described aluminium alloy target of claim 1-3, is characterized in that step is as follows:
(1) aluminium ingot and metal alloy are cut into slice, then ultrasonic surface cleaning, dries, and weighs shove charge, body of heater is evacuated to 0.01Pa level, alumina crucible heats up, vacuum intermediate-frequency induction melting, have a power failure, copper water cooled mo(u)ld casts ingot casting, cold with stove, vacuum breaker gets ingot;
(2) high temperature eliminates casting stress homogenization of composition anneal, insulation, then aluminum alloy ingot surface turning strip off the skin, the shrinkage cavity of crop portion;
(3) be heated to 300-600 DEG C, forge hot is beaten to thickness 15-30mm, and temperature need heat once again lower than when 350 DEG C;
(4) be heated to 300-500 DEG C, rolling process, temperature need heat once again lower than when 350 DEG C;
(5) carry out stress relief annealing, then machining obtains the aluminium alloy target product of specified size;
(6) ultrasonic nondestructive test is carried out to target, measure its composition, purity, grain size, density parameter.
5. the preparation method of aluminium alloy target according to claim 4, is characterized in that being warming up to 800-1000 DEG C described in step (1).
6. the preparation method of aluminium alloy target according to claim 4, is characterized in that the annealing temperature described in step (2) is 200-400 DEG C.
7. the preparation method of aluminium alloy target according to claim 4, is characterized in that the soaking time 2-5 hour described in step (2).
8. the preparation method of aluminium alloy target according to claim 4, is characterized in that the temperature that forges described in step (3) is 350-460 DEG C.
9. the preparation method of aluminium alloy target according to claim 4, it is characterized in that the pass deformation rate of the rolling described in step (4) is 10-30%, rolling temperature is 350-420 DEG C.
10. the preparation method of aluminium alloy target according to claim 4, it is characterized in that the annealing temperature described in step (5) is 200-400 DEG C, annealing time is 2-5 hour.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410842610.6A CN104480445A (en) | 2014-12-30 | 2014-12-30 | Aluminum alloy target and preparation method thereof |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107841639A (en) * | 2017-12-11 | 2018-03-27 | 基迈克材料科技（苏州）有限公司 | Aluminium-scandium alloy target blankss and preparation method and application |
| CN108097722A (en) * | 2017-12-08 | 2018-06-01 | 宁波江丰电子材料股份有限公司 | A kind of Al-Sc alloy target materials forming method |
| CN111455327A (en) * | 2019-08-08 | 2020-07-28 | 湖南稀土金属材料研究院 | High-scandium-content aluminum-scandium alloy target material and preparation method thereof |
| CN111455223A (en) * | 2019-08-08 | 2020-07-28 | 湖南稀土金属材料研究院 | Aluminum-scandium alloy target material and preparation method thereof |
| CN112063866A (en) * | 2020-09-16 | 2020-12-11 | 湖南稀土金属材料研究院 | Method for preparing aluminum-scandium alloy with high scandium content |
| CN112725675A (en) * | 2020-12-23 | 2021-04-30 | 苏州希镝瑞新材料科技有限公司 | Method for manufacturing dysprosium/terbium target |
| CN112795819A (en) * | 2020-12-30 | 2021-05-14 | 山东昊轩电子陶瓷材料有限公司 | Preparation method of aluminum alloy target material |
| CN113584333A (en) * | 2021-07-14 | 2021-11-02 | 先导薄膜材料有限公司 | Method for improving uniformity of aluminum-scandium alloy target material |
| CN115595540A (en) * | 2022-10-21 | 2023-01-13 | 基迈克材料科技（苏州）有限公司（Cn） | A kind of preparation technology of aluminum-scandium alloy target material |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108097722A (en) * | 2017-12-08 | 2018-06-01 | 宁波江丰电子材料股份有限公司 | A kind of Al-Sc alloy target materials forming method |
| CN107841639A (en) * | 2017-12-11 | 2018-03-27 | 基迈克材料科技（苏州）有限公司 | Aluminium-scandium alloy target blankss and preparation method and application |
| CN111455327B (en) * | 2019-08-08 | 2022-04-12 | 湖南稀土金属材料研究院 | High-scandium-content aluminum-scandium alloy target material and preparation method thereof |
| CN111455223A (en) * | 2019-08-08 | 2020-07-28 | 湖南稀土金属材料研究院 | Aluminum-scandium alloy target material and preparation method thereof |
| CN111455223B (en) * | 2019-08-08 | 2021-10-01 | 湖南稀土金属材料研究院 | Aluminum-scandium alloy target material and preparation method thereof |
| CN111455327A (en) * | 2019-08-08 | 2020-07-28 | 湖南稀土金属材料研究院 | High-scandium-content aluminum-scandium alloy target material and preparation method thereof |
| US12286692B2 (en) | 2019-08-08 | 2025-04-29 | Hunan Rare Earth Metal Material Research Institute Co., Ltd. | Aluminum-scandium alloy target with high scandium content, and preparation method thereof |
| CN112063866A (en) * | 2020-09-16 | 2020-12-11 | 湖南稀土金属材料研究院 | Method for preparing aluminum-scandium alloy with high scandium content |
| CN112725675A (en) * | 2020-12-23 | 2021-04-30 | 苏州希镝瑞新材料科技有限公司 | Method for manufacturing dysprosium/terbium target |
| CN112795819A (en) * | 2020-12-30 | 2021-05-14 | 山东昊轩电子陶瓷材料有限公司 | Preparation method of aluminum alloy target material |
| CN113584333A (en) * | 2021-07-14 | 2021-11-02 | 先导薄膜材料有限公司 | Method for improving uniformity of aluminum-scandium alloy target material |
| CN113584333B (en) * | 2021-07-14 | 2022-05-13 | 先导薄膜材料有限公司 | Method for improving uniformity of aluminum-scandium alloy target material |
| CN115595540A (en) * | 2022-10-21 | 2023-01-13 | 基迈克材料科技（苏州）有限公司（Cn） | A kind of preparation technology of aluminum-scandium alloy target material |
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