CN104576922B - The manufacturing method and structure of three axis AMR magnetometric sensors - Google Patents
The manufacturing method and structure of three axis AMR magnetometric sensors Download PDFInfo
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- CN104576922B CN104576922B CN201410165762.7A CN201410165762A CN104576922B CN 104576922 B CN104576922 B CN 104576922B CN 201410165762 A CN201410165762 A CN 201410165762A CN 104576922 B CN104576922 B CN 104576922B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000010410 layer Substances 0.000 claims abstract description 238
- 239000000696 magnetic material Substances 0.000 claims abstract description 126
- 239000011241 protective layer Substances 0.000 claims abstract description 107
- 230000005291 magnetic effect Effects 0.000 claims abstract description 50
- 238000000034 method Methods 0.000 claims abstract description 42
- 230000004888 barrier function Effects 0.000 claims abstract description 38
- 238000005530 etching Methods 0.000 claims abstract description 19
- 230000008569 process Effects 0.000 claims abstract description 16
- 238000000137 annealing Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 230000004907 flux Effects 0.000 claims description 14
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 230000000717 retained effect Effects 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 238000001312 dry etching Methods 0.000 claims description 2
- 238000001259 photo etching Methods 0.000 claims description 2
- 239000002344 surface layer Substances 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 15
- 230000006872 improvement Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000005389 magnetism Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
The invention discloses a kind of manufacturing methods of three axis AMR magnetometric sensors, including step：The first insulating layer is formed on substrate；It adopts and forms groove in the first insulating layer；Form second medium barrier layer；Sequentially form the first magnetic material layer, the first protective layer, the second magnetic material layer and the second protective layer；Being performed etching successively to the second protective layer and the second magnetic material layer using isotropic dry etch technique makes the second protective layer and the second magnetic material layer only remain in trench sidewall surface.It is made annealing treatment.Horizontal direction AMR magnetometric sensors and vertical direction AMR magnetometric sensors are performed etching and are formed simultaneously using the first protective layer of lithographic etch process pair and the first magnetic material layer.The invention also discloses a kind of three axis AMR magnetometric sensors.The present invention can improve the Z axis magnetic sensitivity of sensor, and it is simple for process, cost is relatively low.
Description
Technical field
The present invention relates to semiconductor integrated circuit manufacturing fields, more particularly to a kind of three axis anisotropic magnetoresistances
The manufacturing method of (Anisotropic Magneto Resistance, AMR) magnetometric sensor, the invention further relates to a kind of three axis
AMR magnetometric sensors.
Background technology
Magneto-resistor (Magneto Resistance, MR) effect, which refers to the resistance of substance, to be become with the change of externally-applied magnetic field
The phenomenon that change.It can be divided into according to the size and mechanism difference of magneto-resistor, normal magneto-resistance effect (OMR), amr effect, huge magnetoelectricity
Inhibition effect (Giant Magneto Resistance, GMR) and Colossal magnetoresistance effect (Colossal Magneto
Resistance, CMR) etc..
For amr effect, in Curie temperature hereinafter, metallic ferromagnetic resistivity can be with the opposite of electric current I and magnetization M
It is orientated and different, the phenomenon that showing anisotropy.The sensor of magnetic field size and Orientation, AMR magnetic can be measured using amr effect
Force snesor has small, low in energy consumption, high sensitivity, strong antijamming capability, high reliability.AMR magnetometric sensors
Earth-magnetism navigation, digital intelligent compass, position measurement and counterfeit money discriminating etc. are can be applied to, is had a extensive future.
AMR magnetometric sensors can also apply in MEMS (MEMS), use 3 axis (3D) AMR magnetometric sensors
MEMS in, the magnetic material layers of existing 3D AMR magnetometric sensors generally uses permalloy, that is, iron nickel (NiFe) alloy shape
At as shown in Figure 1, being the flow chart of the manufacturing method of existing three axis AMR magnetometric sensors；It is existing as shown in Fig. 2A to Fig. 2 B
There is the sectional structure chart of device in each step of method；
Existing three axis AMR magnetometric sensors include X-axis AMR magnetometric sensors, Y-axis AMR magnetometric sensors and Z axis AMR magnetic
Force snesor, the Z axis magnetometric sensor is composed of the 3rd AMR magnetometric sensors and the 4th AMR magnetometric sensors, described
X-axis AMR magnetometric sensors, the Y-axis AMR magnetometric sensors and the 3rd AMR magnetometric sensors are all horizontal direction AMR magnetic
Force snesor, the 4th AMR magnetometric sensors are vertical direction AMR magnetometric sensors；The X-axis AMR magnetometric sensors and
The Y-axis AMR magnetometric sensors are as shown in dotted line frame 107a, and the three axis AMR magnetometric sensors are as shown in dotted line frame 107b, institute
The 4th AMR magnetometric sensors are stated as shown in dotted line frame 108, the manufacturing method of existing three axis AMR magnetometric sensors includes following step
Suddenly：
Step 1: forming the first insulating layer 102 on substrate 101；First insulating layer 102 is silicon oxide layer.
Step 2: forming groove 103, the groove 103 in first insulating layer 102 using lithographic etch process
In the forming region of the 4th AMR magnetometric sensors；The bottom of groove 103 is not passed through first insulating layer 102 but position
In first insulating layer 102.
Step 3: first insulating layer outside the bottom surface of the groove 103, side and the groove 103
102 surfaces form second medium barrier layer 104, and the second medium barrier layer 104 is used to carry out first insulating layer 102
Protection.The second medium barrier layer 104 is silicon nitride layer.
Step 4: forming the magnetic material layer with anisotropic magnetoresistance on 104 surface of second medium barrier layer
105；The magnetic material layer 105 is layer of iron-nickel alloy, and thickness is 200 angstroms.
Step 5: forming protective layer 106 on 105 surface of the magnetic material layer, the protective layer 106 is used for magnetic material
The bed of material 105 is protected；The protective layer 106 is tantalum nitride layer (TaN), and thickness is 900 angstroms.
Step 6: being made annealing treatment to the magnetic material layer 105.
Step 7: being performed etching to the protective layer 106 and the magnetic material layer 105 using lithographic etch process simultaneously same
When form horizontal direction AMR magnetometric sensors and the 4th AMR magnetometric sensors of vertical direction AMR magnetometric sensors；The water
Square 104 surface of second medium barrier layer being located at outside the groove 103 to AMR magnetometric sensors, by etching after
The magnetic material layer 105 and the superposition of the protective layer 106 are formed；The vertical direction AMR magnetometric sensors are described by being located at
The magnetic material layer 105, the protective layer 106, second magnetic material layer and described second of 103 sidewall surfaces of groove
Protective layer is superimposed to be formed.
The 3rd AMR magnetometric sensors are located at the close position of the 4th AMR magnetometric sensors, pass through the described 4th
The magnetic flux that Z axis detects is directed in the 3rd AMR magnetometric sensors and by the third by AMR magnetometric sensors
AMR magnetometric sensors read the signal of Z axis；The i.e. described 3rd AMR magnetometric sensors are mainly for detection of the 4th AMR magnetic force
The magnetic flux amount of sensor changes, and one is collectively formed by the 3rd AMR magnetometric sensors and the 4th AMR magnetometric sensors
A complete Z axis AMR magnetometric sensors, by being after removing X-axis and Y-axis AMR factors in the 3rd AMR magnetometric sensors
It can obtain real Z axis magnetic force change.
Arrow line shown in mark 109 indicates the magnetic line of force that the 4th AMR magnetometric sensors are sensed in Fig. 2 B, i.e.,
The vivid description of lines of magnetic induction density B, product of the magnetic flux by magnetic induction density B and its area passed through.In existing skill
In art, the magnetic material layer 105 of the 4th AMR magnetometric sensors is positioned at the side of groove, thinner thickness, this can cause to feel
The magnetic flux for the Z axis that should be arrived is reduced, and magnetic sensitivity reduces.
Invention content
Technical problem to be solved by the invention is to provide a kind of manufacturing method of three axis AMR magnetometric sensors, Neng Gouti
The Z axis magnetic sensitivity of high sensor, and it is simple for process, cost is relatively low.For this purpose, the present invention also provides a kind of three axis AMR magnetic force to pass
Sensor.
In order to solve the above technical problems, three axis AMR magnetic of the manufacturing method of three axis AMR magnetometric sensors provided by the invention
Force snesor includes X-axis AMR magnetometric sensors, Y-axis AMR magnetometric sensors and Z axis AMR magnetometric sensors, and the Z axis magnetic force passes
Sensor is composed of the 3rd AMR magnetometric sensors and the 4th AMR magnetometric sensors, the X-axis AMR magnetometric sensors, the Y
Axis AMR magnetometric sensors and the 3rd AMR magnetometric sensors are all horizontal direction AMR magnetometric sensors, the 4th AMR magnetic
Force snesor is vertical direction AMR magnetometric sensors；The manufacturing method of the three axis AMR magnetometric sensors includes the following steps：
Step 1: forming the first insulating layer on substrate.
Step 2: form groove in first insulating layer using lithographic etch process, the groove is located at described the
The forming region of four AMR magnetometric sensors.
Step 3: the first surface of insulating layer shape outside the bottom surface of the groove, side and the groove
At second medium barrier layer, the second medium barrier layer is for protecting first insulating layer.
Step 4: forming the first magnetic material with anisotropic magnetoresistance in the second medium barrier layer surface
Layer.
Step 5: forming the first protective layer in the first magnetic material layer surface, described first is protective layer used in institute
The first magnetic material layer is stated to be protected.
Step 6: forming the second magnetic material layer with anisotropic magnetoresistance in first protective layer.
Step 7: forming the second protective layer in the second magnetic material layer surface, described second is protective layer used in institute
The first magnetic material layer is stated to be protected.
Step 8: using isotropic dry etch technique successively to second protective layer and second magnetic material
Layer performs etching, which removes second protective layer of the groove outer surface and second magnetic material layer
It removes, the second protective layer described in the trench bottom surfaces and the second magnetic material layer segment retain, the trenched side-wall table
Second protective layer in face and second magnetic material layer retain.
Step 9: being made annealing treatment to first magnetic material layer and second magnetic material layer retained.
Step 10: using lithographic etch process to first protective layer and first magnetic material layer and the groove
Second protective layer and second magnetic material layer that bottom surface is retained perform etching and are formed simultaneously each water
Square to AMR magnetometric sensors and the 4th AMR magnetometric sensors；Each horizontal direction AMR magnetometric sensors are located at institute
It states the second medium barrier layer surface outside groove, protected by first magnetic material layer and described first after etching
Stacking plus formation；The 4th AMR magnetometric sensors are by positioned at first magnetic material layer of the trench sidewall surface, institute
The first protective layer, second magnetic material layer and second protective layer is stated to be superimposed to be formed.
A further improvement is that first magnetic material layer and second magnetic material layer are all layer of iron-nickel alloy；
First protective layer and second protective layer are all tantalum nitride layer.
A further improvement is that the thickness of first magnetic material layer is 100 angstroms~300 angstroms, first protective layer
Thickness be 600 angstroms~1200 angstroms, the thickness of second magnetic material layer is 100 angstroms~300 angstroms, second protective layer
Thickness is 600 angstroms~1200 angstroms.
A further improvement is that the 3rd AMR magnetometric sensors are located at the juxtaposition of the 4th AMR magnetometric sensors
It sets, the magnetic flux that Z axis detects is directed in the 3rd AMR magnetometric sensors by the 4th AMR magnetometric sensors
And the signal of Z axis is read by the 3rd AMR magnetometric sensors.
A further improvement is that first insulating layer is silicon oxide layer；The second medium barrier layer is silicon nitride layer.
In order to solve the above technical problems, three axis AMR magnetometric sensors provided by the invention include X-axis AMR magnetometric sensors,
Y-axis AMR magnetometric sensors and Z axis AMR magnetometric sensors, the Z axis magnetometric sensor is by the 3rd AMR magnetometric sensors and the 4th
AMR magnetometric sensors are composed, the X-axis AMR magnetometric sensors, the Y-axis AMR magnetometric sensors and the 3rd AMR
Magnetometric sensor is all horizontal direction AMR magnetometric sensors, and the 4th AMR magnetometric sensors pass for vertical direction AMR magnetic force
Sensor；The structure of the three axis AMR magnetometric sensors is：
It is formed with the first insulating layer on substrate.
Groove is formed in first insulating layer, the groove is located at the formation of the 4th AMR magnetometric sensors
Region.
First surface of insulating layer outside the bottom surface of the groove, side and the groove forms second and is situated between
Matter barrier layer, the second medium barrier layer is for protecting first insulating layer.
It is sequentially formed with the first magnetic material layer, the first protective layer, the second magnetism in the second medium barrier layer surface
Material layer and the second protective layer.
It is formed in the sidewall surfaces of the groove and second protective layer and second magnetic material layer is carried out respectively
To the superimposed layer of second magnetic material layer and second protective layer after same sex dry etching, the trench bottom surfaces
And the groove outer surface second protective layer and second magnetic material layer be removed.
Each horizontal direction AMR magnetometric sensors are located at the second medium barrier layer surface outside the groove, and by
First magnetic material layer and first protective layer after chemical wet etching and annealing are superimposed to be formed.
The 4th AMR magnetometric sensors are by first magnetic by annealing positioned at the trench sidewall surface
Property material layer, first protective layer, the second magnetic material layer and the second protective layer are superimposed to be formed.
A further improvement is that first magnetic material layer and second magnetic material layer are all layer of iron-nickel alloy；
First protective layer and second protective layer are all tantalum nitride layer.
A further improvement is that the thickness of first magnetic material layer is 100 angstroms~300 angstroms, first protective layer
Thickness be 600 angstroms~1200 angstroms, the thickness of second magnetic material layer is 100 angstroms~300 angstroms, second protective layer
Thickness is 600 angstroms~1200 angstroms.
A further improvement is that the 3rd AMR magnetometric sensors are located at the juxtaposition of the 4th AMR magnetometric sensors
It sets, the magnetic flux that Z axis detects is directed in the 3rd AMR magnetometric sensors by the 4th AMR magnetometric sensors
And the signal of Z axis is read by the 3rd AMR magnetometric sensors.
A further improvement is that first insulating layer is silicon oxide layer；The second medium barrier layer is silicon nitride layer.
The present invention is by being used to form on the first magnetic material layer and the first protective layer of horizontal direction AMR magnetometric sensors
The second magnetic material layer and the second protective layer are re-formed, and uses the second protective layer of isotropic dry etch technique pair and second
Magnetic material layer be sequentially etched can be in the side wall of the groove of the forming region of the vertical component of Z axis AMR magnetometric sensors
Surface retains the second protective layer and the second magnetic material layer, the second protective layer and the second magnetic material layer of the trench sidewall surface
The thickness of the magnetic material layer of subsequent Z axis vertical direction AMR magnetometric sensors can be increased, while not influencing horizontal direction
The thickness of the magnetic material layer of AMR magnetometric sensors makes the thickness of the magnetic material layer of horizontal direction AMR magnetometric sensors obtain
It accurately controls, the thickness increase of the magnetic material layer of Z axis vertical direction AMR magnetometric sensors can increase Z axis vertical direction AMR
The magnetic flux quantity of the induction of magnetometric sensor, so as to improve the Z axis magnetic sensitivity of sensor；And the present invention only needs increase by two
Depositing technics and a step comprehensively etching technics in the same direction are walked, does not need to increase additional photoetching process, institute is in the process of the present invention
Simple for process, cost it is relatively low.
Description of the drawings
The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments：
Fig. 1 is the flow chart of the manufacturing method of existing three axis AMR magnetometric sensors；
Fig. 2A-Fig. 2 B are the sectional structure charts of device in each step of existing method；
Fig. 3 is the flow chart of present invention method；
Fig. 4 A- Fig. 4 C are the sectional structure charts of device in each step of present invention method；
Fig. 5 is the comparison figure of the Z axis sensitivity for the device that present invention method and existing method are formed.
Specific implementation mode
As shown in figure 3, being the flow chart of present invention method；It is the embodiment of the present invention as shown in Fig. 4 A to Fig. 4 C
The sectional structure chart of device in each step of method.Three axis AMR magnetometric sensors include X-axis AMR magnetometric sensors, Y-axis AMR magnetic force
Sensor and Z axis AMR magnetometric sensors, the Z axis magnetometric sensor are passed by the 3rd AMR magnetometric sensors and the 4th AMR magnetic force
Sensor is composed, the X-axis AMR magnetometric sensors, the Y-axis AMR magnetometric sensors and the 3rd AMR magnetometric sensors
All it is horizontal direction AMR magnetometric sensors, the 4th AMR magnetometric sensors are vertical direction AMR magnetometric sensors；In Fig. 4 C
In, as shown in dotted line frame 9a, the three axis AMR magnetic force passes for the X-axis AMR magnetometric sensors and the Y-axis AMR magnetometric sensors
Sensor is as shown in dotted line frame 9b, and the 4th AMR magnetometric sensors are as shown in dotted line frame 10, three axis AMR magnetic of the embodiment of the present invention
The manufacturing method of force snesor includes the following steps：
Step 1: as shown in Figure 4 A, forming the first insulating layer 2 on substrate 1.Preferably, first insulating layer 2 is oxygen
SiClx layer.
Step 2: as shown in Figure 4 A, groove 3, the ditch are formed in first insulating layer 2 using lithographic etch process
Slot 3 is located at the forming region of the 4th AMR magnetometric sensors.The bottom of the groove 3 is not passed through first insulating layer 2.
Step 3: as shown in Figure 4 A, described first outside the bottom surface of the groove 3, side and the groove 3
2 surface of insulating layer forms second medium barrier layer 4, and the second medium barrier layer 4 is for protecting first insulating layer 2
Shield.The second medium barrier layer 4 is predominantly made in the etching of subsequent step ten by the protective effect of first insulating layer 2
For the etching barrier layer of first protective layer 6 and first magnetic material layer 5；Also can be to be carried out in subsequent step four simultaneously
First magnetic material layer 5 provides preferable substrate when growing.Preferably, the second medium barrier layer 4 is silicon nitride layer.
Step 4: as shown in Figure 4 A, the with anisotropic magnetoresistance is formed on 4 surface of second medium barrier layer
One magnetic material layer 5.Preferably, first magnetic material layer 5 is layer of iron-nickel alloy；The thickness of first magnetic material layer 5
Degree is 100 angstroms~300 angstroms, more preferably 200 angstroms.First magnetic material layer 5 can also have to be other in other embodiments
The material of anisotropic magnetoresistance.
Step 5: as shown in Figure 4 A, forming the first protective layer 6 on 5 surface of the first magnetic material layer, described first protects
Sheath 6 is for protecting first magnetic material layer 5.Preferably, first protective layer 6 is tantalum nitride layer；It is described
The thickness of first protective layer 6 is 600 angstroms~1200 angstroms, more preferably 900 angstroms.
Step 6: as shown in Figure 4 A, the second magnetic with anisotropic magnetoresistance is formed on 6 surface of the first protective layer
Property material layer 7.Preferably, second magnetic material layer 7 is also layer of iron-nickel alloy, the thickness of second magnetic material layer 7
For 100 angstroms~300 angstroms, more preferably 200 angstroms.In other embodiments, second magnetic material layer 7 also can be other with each
The material of anisotropy magneto-resistor.
Step 7: as shown in Figure 4 A, forming the second protective layer 8 on 7 surface of the second magnetic material layer, described second protects
Sheath 8 is for protecting first magnetic material layer 5.Preferably, second protective layer 8 is all tantalum nitride layer；Institute
The thickness for stating the second protective layer 8 is 600 angstroms~1200 angstroms, more preferably 900 angstroms.
Step 8: as shown in Figure 4 B, using isotropic dry etch technique successively to second protective layer 8 and described
Second magnetic material layer 7 performs etching, and the etching technics is by 3 outer surface of 3 bottom surface of the groove and the groove
8 and of the second protective layer of second protective layer 8 and second magnetic material layer 7 removal, 3 sidewall surfaces of the groove
Second magnetic material layer 7 retains.In real process, second protective layer 8 of 3 outer surface of the groove and described
When two magnetic material layers 7 completely remove, second protective layer 8 and second magnetic material of 3 bottom surface of the groove
Layer 7 can't completely remove and can part retain, second protective layer 8 that 3 bottom surface of the groove is retained and described
Second magnetic material layer 7 is removed simultaneously by the lithographic etch process in subsequent step ten.
Step 9: as shown in Figure 4 B, to first magnetic material layer 5 and second magnetic material layer 7 retained
It is made annealing treatment.
Step 10: as shown in Figure 4 B, using lithographic etch process to first protective layer 6 and first magnetic material
Second protective layer 8 and second magnetic material layer 7 that layer 5 and 3 bottom surface of the groove are retained perform etching
And it is formed simultaneously horizontal direction AMR magnetometric sensors and the 4th AMR magnetometric sensors.
The horizontal direction AMR magnetometric sensors be located at 4 surface of second medium barrier layer outside the groove 3,
And be by after etching first magnetic material layer 5 and first protective layer 6 superposition formed；The 4th AMR magnetic force passes
Sensor is by positioned at first magnetic material layer 5 of 3 sidewall surfaces of the groove, first protective layer 6, second magnetism
Material layer 7 and second protective layer 8 superposition are formed.
The 3rd AMR magnetometric sensors are used to receive the magnetic flux of the Z axis AMR magnetometric sensors and read Z axis letter
Number.The 3rd AMR magnetometric sensors are located at the close position of the 4th AMR magnetometric sensors, pass through the 4th AMR magnetic
The magnetic flux that Z axis detects is directed in the 3rd AMR magnetometric sensors and by the 3rd AMR magnetic force by force snesor
Sensor reads the signal of Z axis.
Present invention method in the sidewall surfaces of groove 3 by forming second magnetic material layer 7 and described
Two protective layers 8, can increase the thickness of Z axis AMR magnetometric sensors, so as to increase the magnetic flux of the Z axis sensed, improve
The magnetic sensitivity of Z axis AMR magnetometric sensors.
As shown in Figure 4 C, three axis AMR magnetometric sensors of the embodiment of the present invention are the structure formed using method as above, three axis
AMR magnetometric sensors include X-axis AMR magnetometric sensors, Y-axis AMR magnetometric sensors and Z axis AMR magnetometric sensors, the Z axis
Magnetometric sensor is composed of the 3rd AMR magnetometric sensors and the 4th AMR magnetometric sensors, the X-axis AMR magnetic force sensing
Device, the Y-axis AMR magnetometric sensors and the 3rd AMR magnetometric sensors are all horizontal direction AMR magnetometric sensors, described
4th AMR magnetometric sensors are vertical direction AMR magnetometric sensors；In figure 4 c, the X-axis AMR magnetometric sensors and the Y
Axis AMR magnetometric sensors are as shown in dotted line frame 9a, and the three axis AMR magnetometric sensors are as shown in dotted line frame 9b, the 4th AMR
As shown in dotted line frame 10, three axis AMR magnetometric sensors include magnetometric sensor：
The first insulating layer 2 is formed on substrate 1.Preferably, first insulating layer 2 is silicon oxide layer.
Groove 3 is formed in first insulating layer 2, the groove 3 is located at the formation area of Z axis AMR magnetometric sensors
Domain.
2 surface of the first insulating layer outside the bottom surface of the groove 3, side and the groove 3 forms the
Second medium barrier layer 4, the second medium barrier layer 4 is for protecting first insulating layer 2.Preferably, described
Second medium barrier layer 4 is silicon nitride layer.
It is sequentially formed with the first magnetic material layer 5, the first protective layer 6, the second magnetic on 4 surface of second medium barrier layer
Property material layer 7 and the second protective layer 8.Preferably, first magnetic material layer 5 and second magnetic material layer 7 are all iron
Nickel alloy layer；First protective layer 6 and second protective layer 8 are all tantalum nitride layer.The thickness of first magnetic material layer 5
Degree is 100 angstroms~300 angstroms, more preferably 200 angstroms；The thickness of first protective layer 6 be 600 angstroms~1200 angstroms, more preferably 900
Angstrom；The thickness of second magnetic material layer 7 is 100 angstroms~300 angstroms, more preferably 200 angstroms；The thickness of second protective layer 8
For 600 angstroms~1200 angstroms, more preferably 900 angstroms.
It is formed with to second protective layer 8 and second magnetic material layer 7 progress in the sidewall surfaces of the groove 3
The superimposed layer of second magnetic material layer 7 and second protective layer 8 after isotropic dry etch, 3 bottom of the groove
Second protective layer 8 and second magnetic material layer 7 of 3 outer surface of portion surface and the groove are removed.
The horizontal direction AMR magnetometric sensors are located at 4 surface of second medium barrier layer outside the groove 3,
And by after chemical wet etching and annealing first magnetic material layer 5 and first protective layer 6 superposition formed.
The 4th AMR magnetometric sensors are by described first by annealing positioned at 3 sidewall surfaces of the groove
Magnetic material layer 5, first protective layer 6, the second magnetic material layer 7 and the superposition of the second protective layer 8 are formed.
The 3rd AMR magnetometric sensors are used to receive the magnetic flux of the Z axis AMR magnetometric sensors and read Z axis letter
Number.The 3rd AMR magnetometric sensors are located at the close position of the 4th AMR magnetometric sensors, pass through the 4th AMR magnetic
The magnetic flux that Z axis detects is directed in the 3rd AMR magnetometric sensors and by the 3rd AMR magnetic force by force snesor
Sensor reads the signal of Z axis.
As shown in figure 5, being the comparison figure of the Z axis sensitivity for the device that present invention method and existing method are formed.
Curve 11 is the Z axis sensitivity curve for the three axis AMR magnetometric sensors that present invention method is formed, and curve 12 is existing side
The abscissa of the Z axis sensitivity curve for the three axis AMR magnetometric sensors that method is formed, curve is sensitivity, and ordinate is same
The quantity for reaching three axis AMR magnetometric sensors of corresponding sensitivity on substrate accounts for the ratio of total quantity.By comparing curve 11
With 12 it is found that
The device that present invention method is formed has three axis of chip dies (die) area for accounting about 95% or more
The Z axis sensitivity of AMR magnetometric sensors has reached 0.042mG/Lsb, and the device that existing method is formed only account for 10%~
The Z axis sensitivity of three axis AMR magnetometric sensors of 35%die areas has reached 0.042mG/Lsb.It is found that the embodiment of the present invention
Method can greatly improve the Z axis sensitivity of three axis AMR magnetometric sensors really.
The present invention has been described in detail through specific embodiments, but these not constitute the limit to the present invention
System.Without departing from the principles of the present invention, those skilled in the art can also make many modification and improvement, these are also answered
It is considered as protection scope of the present invention.
Claims (10)
1. a kind of manufacturing method of three axis AMR magnetometric sensors, which is characterized in that three axis AMR magnetometric sensors include X-axis AMR
Magnetometric sensor, Y-axis AMR magnetometric sensors and Z axis AMR magnetometric sensors, the Z axis magnetometric sensor is by the 3rd AMR magnetic force
Sensor and the 4th AMR magnetometric sensors are composed, the X-axis AMR magnetometric sensors, the Y-axis AMR magnetometric sensors and
The 3rd AMR magnetometric sensors are all horizontal direction AMR magnetometric sensors, and the 4th AMR magnetometric sensors are Vertical Square
To AMR magnetometric sensors；The manufacturing method of the three axis AMR magnetometric sensors includes the following steps：
Step 1: forming the first insulating layer on substrate；
Step 2: forming groove in first insulating layer using lithographic etch process, the groove is located at the 4th AMR
The forming region of magnetometric sensor；
Step 3: first surface of insulating layer outside the bottom surface of the groove, side and the groove forms the
Second medium barrier layer, the second medium barrier layer is for protecting first insulating layer；
Step 4: forming the first magnetic material layer with anisotropic magnetoresistance in the second medium barrier layer surface；
Step 5: forming the first protective layer in the first magnetic material layer surface, described first is protective layer used in described the
One magnetic material layer is protected；
Step 6: forming the second magnetic material layer with anisotropic magnetoresistance in first protective layer；
Step 7: forming the second protective layer in the second magnetic material layer surface, described second is protective layer used in described the
One magnetic material layer is protected；
Step 8: using isotropic dry etch technique successively to second protective layer and second magnetic material layer into
Row etching, the etching technics by second protective layer of the groove outer surface and second magnetic material layer removal,
Second protective layer described in the trench bottom surfaces and the second magnetic material layer segment retain, the trench sidewall surface
Second protective layer and second magnetic material layer retain；
Step 9: being made annealing treatment to first magnetic material layer and second magnetic material layer retained；
Step 10: using lithographic etch process to first protective layer and first magnetic material layer and the channel bottom
Second protective layer and second magnetic material layer that surface is retained perform etching and are formed simultaneously each level side
To AMR magnetometric sensors and the 4th AMR magnetometric sensors；Each horizontal direction AMR magnetometric sensors are located at the ditch
The second medium barrier layer surface outside slot, by after etching first magnetic material layer and first protection be laminated
Add to be formed；The 4th AMR magnetometric sensors by positioned at the trench sidewall surface first magnetic material layer, described
One protective layer, second magnetic material layer and second protective layer are superimposed to be formed.
2. the method as described in claim 1, it is characterised in that：First magnetic material layer and second magnetic material layer
All it is layer of iron-nickel alloy；First protective layer and second protective layer are all tantalum nitride layer.
3. method as claimed in claim 2, it is characterised in that：The thickness of first magnetic material layer is 100 angstroms~300
Angstrom, the thickness of first protective layer is 600 angstroms~1200 angstroms, and the thickness of second magnetic material layer is 100 angstroms~300
Angstrom, the thickness of second protective layer is 600 angstroms~1200 angstroms.
4. the method as described in claim 1, it is characterised in that：The 3rd AMR magnetometric sensors are located at the 4th AMR magnetic
The magnetic flux that Z axis detects is directed to the third by the close position of force snesor by the 4th AMR magnetometric sensors
The signal of Z axis is read in AMR magnetometric sensors and by the 3rd AMR magnetometric sensors.
5. the method as described in claim 1, it is characterised in that：First insulating layer is silicon oxide layer；The second medium
Barrier layer is silicon nitride layer.
6. a kind of three axis AMR magnetometric sensors, it is characterised in that：Three axis AMR magnetometric sensors include X-axis AMR magnetometric sensors,
Y-axis AMR magnetometric sensors and Z axis AMR magnetometric sensors, the Z axis magnetometric sensor is by the 3rd AMR magnetometric sensors and the 4th
AMR magnetometric sensors are composed, the X-axis AMR magnetometric sensors, the Y-axis AMR magnetometric sensors and the 3rd AMR
Magnetometric sensor is all horizontal direction AMR magnetometric sensors, and the 4th AMR magnetometric sensors pass for vertical direction AMR magnetic force
Sensor；The structure of the three axis AMR magnetometric sensors is：
It is formed with the first insulating layer on substrate；
Groove is formed in first insulating layer, the groove is located at the forming region of the 4th AMR magnetometric sensors；
First surface of insulating layer outside the bottom surface of the groove, side and the groove forms second medium resistance
Barrier, the second medium barrier layer is for protecting first insulating layer；
It is sequentially formed with the first magnetic material layer, the first protective layer, the second magnetic material in the second medium barrier layer surface
Layer and the second protective layer；
It is formed in the sidewall surfaces of the groove each to same to second protective layer and second magnetic material layer progress
The superimposed layer of second magnetic material layer and second protective layer after property dry etching, the trench bottom surfaces and
Second protective layer and second magnetic material layer of the groove outer surface are removed；
Each horizontal direction AMR magnetometric sensors are located at the second medium barrier layer surface outside the groove, and by photoetching
First magnetic material layer and first protective layer after etching and annealing are superimposed to be formed；
The 4th AMR magnetometric sensors are by the magnetic material of described first by annealing positioned at the trench sidewall surface
The bed of material, first protective layer, the second magnetic material layer and the second protective layer are superimposed to be formed.
7. three axis AMR magnetometric sensors as claimed in claim 6, it is characterised in that：First magnetic material layer and described
Second magnetic material layer is all layer of iron-nickel alloy；First protective layer and second protective layer are all tantalum nitride layer.
8. three axis AMR magnetometric sensors as claimed in claim 7, it is characterised in that：The thickness of first magnetic material layer
It it is 100 angstroms~300 angstroms, the thickness of first protective layer is 600 angstroms~1200 angstroms, and the thickness of second magnetic material layer is
100 angstroms~300 angstroms, the thickness of second protective layer is 600 angstroms~1200 angstroms.
9. three axis AMR magnetometric sensors as claimed in claim 6, it is characterised in that：The 3rd AMR magnetometric sensors are located at
The close position of the 4th AMR magnetometric sensors, the magnetic flux for being detected Z axis by the 4th AMR magnetometric sensors
It is directed in the 3rd AMR magnetometric sensors and is read by the 3rd AMR magnetometric sensors signal of Z axis.
10. three axis AMR magnetometric sensors as claimed in claim 6, it is characterised in that：First insulating layer is silica
Layer；The second medium barrier layer is silicon nitride layer.
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| CN101540337A (en) * | 2008-03-18 | 2009-09-23 | 株式会社理光 | Magnetic sensor and mobile information terminal apparatus |
| CN102918413A (en) * | 2010-03-31 | 2013-02-06 | 艾沃思宾技术公司 | Process integration of a single chip three axis magnetic field sensor |
| CN102270736A (en) * | 2010-06-01 | 2011-12-07 | 中国科学院物理研究所 | A kind of magnetic nano multi-layer film for magnetic sensitive sensor and its manufacturing method |
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