CN104656382A - Stripping liquid capable of effectively removing photoresist of light-emitting diode (LED) chip, and stripping method for removing photoresist of LED chip - Google Patents
Stripping liquid capable of effectively removing photoresist of light-emitting diode (LED) chip, and stripping method for removing photoresist of LED chip Download PDFInfo
- Publication number
- CN104656382A CN104656382A CN201510074538.1A CN201510074538A CN104656382A CN 104656382 A CN104656382 A CN 104656382A CN 201510074538 A CN201510074538 A CN 201510074538A CN 104656382 A CN104656382 A CN 104656382A
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- Prior art keywords
- led chip
- stripper
- photoresist
- stripping
- water
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 7
- 239000007788 liquid Substances 0.000 title abstract description 12
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims abstract description 26
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 20
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims abstract description 14
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000000654 additive Substances 0.000 claims abstract description 10
- 239000006184 cosolvent Substances 0.000 claims abstract description 10
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000005406 washing Methods 0.000 claims description 12
- 230000006641 stabilisation Effects 0.000 claims description 9
- 238000011105 stabilization Methods 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 238000003756 stirring Methods 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 238000009835 boiling Methods 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- DAJSVUQLFFJUSX-UHFFFAOYSA-M sodium;dodecane-1-sulfonate Chemical compound [Na+].CCCCCCCCCCCCS([O-])(=O)=O DAJSVUQLFFJUSX-UHFFFAOYSA-M 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 7
- 239000002184 metal Substances 0.000 abstract description 7
- 238000003912 environmental pollution Methods 0.000 abstract description 3
- 230000036541 health Effects 0.000 abstract description 3
- 230000000996 additive effect Effects 0.000 abstract 1
- 229940031098 ethanolamine Drugs 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000003292 glue Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention relates to a stripping liquid capable of effectively removing photoresist of a light-emitting diode (LED) chip. The stripping liquid comprises the following components by weight ratio: 55-56% of N-methylpyrrolidone (NMP), 12-14% of ethanol amine, 5-6% of dimethyl sulfoxide, 13-14% of ethylene glycol, 4-5% of diphenyl ether, 5-7% of a water-based cosolvent and 3-3.5% of a stable additive. The stripping method comprises the steps of maintaining the stripping liquid to be at the constant temperature of 70-85 DEG C, and mixing within 3-7 minutes until the photoresist is completely dissolved and stripped. The stripping liquid and the stripping method have the characteristics that a metal layer is not attacked when light resistance stripping is carried out on positive and negative photoresist, the technological temperature is low, and the stripping liquid and the stripping method are not harmful to the human health and are less in environmental pollution, high in photoresist removal speed and suitable for large-scale use.
Description
Technical field
The present invention relates to a kind of associated electrical chemical reagent, be specifically related to a kind of stripper and stripping means thereof of effective removal LED chip photoresist.
Background technology
Light emitting diode (Light-Emitting Diode, be called for short LED) a kind ofly can enter the semiconductor electronic component that electric energy Efficient Conversion is luminous energy.Occurred from 1962, can only send the ruddiness of low luminosity in early days, develop other monochromatic versions afterwards, the light that can send even to this day is throughout visible ray, infrared ray and ultraviolet, and luminosity also brings up to suitable luminosity.And purposes is also by the beginning as pilot lamp, display board etc.; Along with the continuous progress of technology, light emitting diode has been widely used in display, televisor daylighting decoration and illumination, and meanwhile, the price of light emitting diode also constantly reduces, and brings revolutionary change to the industries such as illumination.Flourish along with domestic manufacture of microchips, increasing chip manufacturer expects that having cheap supporting production domesticization associated electrical chemical reagent can bring new advantage for its manufacturing cost.
Summary of the invention
The object of the present invention is to provide a kind of stripper and stripping means thereof of effective removal LED chip photoresist, it has when carrying out the stripping of positive and negative glue photoresistance does not attack metal level (aluminium electrode, copper electrode, silver electrode, gold electrode), operation temperature is low, to health with environmental pollution is little, speed of removing photoresist fast and be applicable to the features such as extensive use.
Technical solution of the present invention is:
A kind of stripper of effective removal LED chip photoresist, its special character is, this stripper is made up of the composition of following weight proportion: 1-METHYLPYRROLIDONE (NMP) 55% ~ 56%, monoethanolamine 12% ~ 14%, dimethyl sulfoxide (DMSO) 5 ~ 6%, ethylene glycol 13 ~ 14%, diphenyl ether 4 ~ 5%, water-based cosolvent 5 ~ 7% and stabilization additives 3% ~ 3.5%.
The stripper of above-mentioned effective removal LED chip photoresist, its special character is, this stripper is made up of the composition of following weight proportion: 1-METHYLPYRROLIDONE (NMP) 55.5%, monoethanolamine 13%, dimethyl sulfoxide (DMSO) 5.5%, ethylene glycol 13.5%, diphenyl ether 4.5%, water-based cosolvent 5% and stabilization additives 3%.
Above-mentioned water-based cosolvent specifically TX-20, described stabilization additives specifically sodium dodecylsulphonate.
The Ph=9-11 of above-mentioned stripper, relative density (water=1): 1.03, boiling point (DEG C) 176 DEG C, 101.325KPa; Heating power (kJ/mol) 719, flash-point (DEG C): 92.8 [closed-cup (199 ℉)], ignition temperature (DEG C): 346; Described stripper and water dissolve each other completely.
Utilize above-mentioned stripper to carry out removing a stripping means for LED chip photoresist, its special character is, the method comprises:
1) 70-85 DEG C is heated to after being mixed by stripper, stand-by;
2) LED chip to be removed photoresist is placed in above-mentioned stripper, constant temperature 3-7min, stripping is dissolved completely in midway constantly stirring to photoresist;
3) take out LED chip, and cleaning is to fully removing the remover be attached on LED chip.
Above-mentioned steps 2) in, coordinate ultrasonic washing when also comprising stirring; The condition of described ultrasonic washing is the ultrasonic washing 10 minutes of 250 hertz.
Above-mentioned steps 3) also comprise step 4) afterwards, described step 4) is: dried up by the moisture film sticked on LED chip.
Above-mentioned drying up uses inert gas to dry up.
Above-mentioned inert gas is nitrogen or helium.
Above-mentioned cleaning uses deionized water or pure water.
The invention has the advantages that: stripper working temperature provided by the invention is between 70 DEG C-85 DEG C, can peel off thoroughly in 3-7min fast to LCD photoresist most of on market; The present invention have carry out not attacking when positive and negative glue photoresistance is peeled off metal level (aluminium electrode, copper electrode, silver electrode, gold electrode), operation temperature low, to health with environmental pollution is little, speed of removing photoresist fast and be applicable to the features such as extensive use.
Embodiment
A kind of stripper of effective removal LED chip photoresist is made up of the composition of following weight proportion: 1-METHYLPYRROLIDONE (NMP) 55% ~ 56%, monoethanolamine 12% ~ 14%, dimethyl sulfoxide (DMSO) 5 ~ 6%, ethylene glycol 13 ~ 14%, diphenyl ether 4 ~ 5%, water-based cosolvent 5 ~ 7% and stabilization additives 3% ~ 3.5%.
This stripper one preferably weight proportion composition composition: 1-METHYLPYRROLIDONE (NMP) 55.5%, monoethanolamine 13%, dimethyl sulfoxide (DMSO) 5.5%, ethylene glycol 13.5%, diphenyl ether 4.5%, water-based cosolvent 5% and stabilization additives 3%.
Wherein water-based cosolvent specifically TX-20, described stabilization additives specifically sodium dodecylsulphonate.
The Ph=9-11 of this stripper, relative density (water=1): 1.03, boiling point (DEG C) 176 DEG C, 101.325KPa; Heating power (kJ/mol) 719, flash-point (DEG C): 92.8 [closed-cup (199 ℉)], ignition temperature (DEG C): 346; Described stripper and water dissolve each other completely.
Utilize above-mentioned stripper to carry out removing a stripping means for LED chip photoresist, comprising:
1) 70-85 DEG C is heated to after being mixed by stripper, stand-by;
2) LED chip to be removed photoresist is placed in above-mentioned stripper, constant temperature 3-7min, stripping is dissolved completely in midway constantly stirring to photoresist;
3) take out LED chip, and use washed with de-ionized water to fully removing the remover be attached on LED chip;
4) the moisture film nitrogen sticked on LED chip is dried up.
Wherein step 2) in, coordinate ultrasonic washing when also comprising stirring; The condition of described ultrasonic washing is the ultrasonic washing 10 minutes of 250 hertz, and such effect is better.
When drying up, consider that economic factors generally selects nitrogen, but do not get rid of other inert gas that other particular surroundings requires use.
The temperature that production process of removing photoresist general at present uses is between 80-90 DEG C, and stripper working temperature provided by the invention is between 70 DEG C-85 DEG C.
Process of removing photoresist now is in order to ensure it is generally as far as possible thoroughly that a glue obtains and removes successively with 3 sinks that remove photoresist continuously.Concrete grammar is: have A, B, C tri-sinks that remove photoresist, the inside all adds the liquid that removes photoresist, and is raised to required temperature of removing photoresist, then chip to be removed photoresist is washed some minutes successively in A, and then chip is put into B wash, finally in C, add washing more once again.The time of each washing is generally consistent, and mostly all between 5-8 minute (considering production efficiency), the whole time of removing photoresist liquid washing substantially all controls at 15min-25min.During continuous seepage, when A remove photoresist liquid saturated aging after discard, using also relatively clean B groove again as A groove, C groove is as B groove, and the new liquid that removes photoresist supplemented injects C groove and continues next circulation.And the present invention can peel off thoroughly fast to LCD photoresist most of on market in 3-7min, speed is fast.
The present invention have carry out positive and negative glue photoresistance peel off time do not attack metal level (aluminium electrode, copper electrode, silver electrode, gold electrode).Do not corrode metal raw because of:
1, the liquid that removes photoresist does not use inorganic strong acid-base, and pH is close to neutral, not too responsive to active metal;
2, raw material ratio ratio shown in this formula effectively prevents as the corrosive property that during single component, they are formed some special metal in component, and to be in other words exactly formula rate be effectively achieves the balance interdepending and mutually restrict of physicochemical property between component.
The present invention is with low cost.Main because:
1, starting material are common is easy to get, and does not have rare composition, can prepare voluntarily;
2, the liquid composition that removes photoresist is always that industry is maintained secrecy, comparatively large to the dependence of import, is the burden reducing LED industry cost.
Claims (10)
1. effectively remove the stripper of LED chip photoresist for one kind, it is characterized in that, this stripper is made up of the composition of following weight proportion: 1-METHYLPYRROLIDONE (NMP) 55% ~ 56%, monoethanolamine 12% ~ 14%, dimethyl sulfoxide (DMSO) 5 ~ 6%, ethylene glycol 13 ~ 14%, diphenyl ether 4 ~ 5%, water-based cosolvent 5 ~ 7% and stabilization additives 3% ~ 3.5%.
2. effectively remove the stripper of LED chip photoresist according to claim 1, it is characterized in that, this stripper is made up of the composition of following weight proportion: 1-METHYLPYRROLIDONE (NMP) 55.5%, monoethanolamine 13%, dimethyl sulfoxide (DMSO) 5.5%, ethylene glycol 13.5%, diphenyl ether 4.5%, water-based cosolvent 5% and stabilization additives 3%.
3. according to claim 1 or 2, effectively remove the stripper of LED chip photoresist, it is characterized in that: described water-based cosolvent specifically TX-20, described stabilization additives specifically sodium dodecylsulphonate.
4. effectively remove the stripper of LED chip photoresist according to claim 3, it is characterized in that: the Ph=9-11 of described stripper, relative density (water=1): 1.03, boiling point (DEG C) 176 DEG C, 101.325KPa; Heating power (kJ/mol) 719, flash-point (DEG C): 92.8 [closed-cup (199 ℉)], ignition temperature (DEG C): 346; Described stripper and water dissolve each other completely.
5. utilize stripper described in claim 1 to carry out removing a stripping means for LED chip photoresist, it is characterized in that, the method comprises:
1) 70-85 DEG C is heated to after being mixed by stripper, stand-by;
2) LED chip to be removed photoresist is placed in above-mentioned stripper, constant temperature 3-7min, stripping is dissolved completely in midway constantly stirring to photoresist;
3) take out LED chip, and cleaning is to fully removing the remover be attached on LED chip.
6. remove the stripping means of LED chip photoresist according to claim 5, it is characterized in that, described step 2) in, coordinate ultrasonic washing when also comprising stirring; The condition of described ultrasonic washing is the ultrasonic washing 10 minutes of 250 hertz.
7. remove the stripping means of LED chip photoresist according to claim 6, it is characterized in that, also comprise step 4) after described step 3), described step 4) is: dried up by the moisture film sticked on LED chip.
8. remove the stripping means of LED chip photoresist according to claim 7, it is characterized in that: described in dry up and use inert gas to dry up.
9. remove the stripping means of LED chip photoresist according to claim 8, it is characterized in that: described inert gas is nitrogen or helium.
10. remove the stripping means of LED chip photoresist according to claim 9, it is characterized in that: described cleaning uses deionized water or pure water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510074538.1A CN104656382A (en) | 2015-02-12 | 2015-02-12 | Stripping liquid capable of effectively removing photoresist of light-emitting diode (LED) chip, and stripping method for removing photoresist of LED chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510074538.1A CN104656382A (en) | 2015-02-12 | 2015-02-12 | Stripping liquid capable of effectively removing photoresist of light-emitting diode (LED) chip, and stripping method for removing photoresist of LED chip |
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| Publication Number | Publication Date |
|---|---|
| CN104656382A true CN104656382A (en) | 2015-05-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510074538.1A Pending CN104656382A (en) | 2015-02-12 | 2015-02-12 | Stripping liquid capable of effectively removing photoresist of light-emitting diode (LED) chip, and stripping method for removing photoresist of LED chip |
Country Status (1)
| Country | Link |
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| CN (1) | CN104656382A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106292209A (en) * | 2016-11-07 | 2017-01-04 | 苏州晶瑞化学股份有限公司 | A kind of efficiency light photoresist stripper and application thereof |
| CN117872693A (en) * | 2024-03-13 | 2024-04-12 | 深圳市松柏科工股份有限公司 | Positive photoresist stripping solution, preparation method and application thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20030064326A1 (en) * | 2001-09-28 | 2003-04-03 | Fujitsu Limited | Resist stripper, resist stripping method, and thin film circuit device formation method |
| CN1543592A (en) * | 2001-07-13 | 2004-11-03 | Ekc������˾ | Sulfoxide pyrolid(in)one alkanolamine cleaner composition |
| CN101738880A (en) * | 2008-11-10 | 2010-06-16 | 安集微电子（上海）有限公司 | Thick film photoresist detergent |
| CN101750911A (en) * | 2008-11-28 | 2010-06-23 | 安集微电子（上海）有限公司 | Photoresist detergent composition |
| CN103676505A (en) * | 2013-12-23 | 2014-03-26 | 大连奥首科技有限公司 | A kind of photoresist stripping solution for chip, preparation method and stripping process |
-
2015
- 2015-02-12 CN CN201510074538.1A patent/CN104656382A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1543592A (en) * | 2001-07-13 | 2004-11-03 | Ekc������˾ | Sulfoxide pyrolid(in)one alkanolamine cleaner composition |
| US20030064326A1 (en) * | 2001-09-28 | 2003-04-03 | Fujitsu Limited | Resist stripper, resist stripping method, and thin film circuit device formation method |
| CN101738880A (en) * | 2008-11-10 | 2010-06-16 | 安集微电子（上海）有限公司 | Thick film photoresist detergent |
| CN101750911A (en) * | 2008-11-28 | 2010-06-23 | 安集微电子（上海）有限公司 | Photoresist detergent composition |
| CN103676505A (en) * | 2013-12-23 | 2014-03-26 | 大连奥首科技有限公司 | A kind of photoresist stripping solution for chip, preparation method and stripping process |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106292209A (en) * | 2016-11-07 | 2017-01-04 | 苏州晶瑞化学股份有限公司 | A kind of efficiency light photoresist stripper and application thereof |
| CN117872693A (en) * | 2024-03-13 | 2024-04-12 | 深圳市松柏科工股份有限公司 | Positive photoresist stripping solution, preparation method and application thereof |
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Application publication date: 20150527 |
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