CN104898982B - Data transmission method, memory control circuit unit and memory storage device - Google Patents

Abstract

The present invention provides a data transmission method, a memory control circuit unit and a memory storage device. The method includes: initially setting a first threshold value and a first accumulated value; and updating the first threshold value by adding the first accumulated value to the first threshold value at a first predetermined time interval. In addition, when the temperature of the detected memory storage device is greater than or equal to the temperature threshold value, it is determined whether the size of the received write data is greater than or equal to the first threshold value; and if not, the write data is written to a rewritable non-volatile memory module and the first threshold value is subtracted from the size of the write data to update the first threshold value. Otherwise, the write data is not written to the rewritable non-volatile memory module. Based on this, the method can effectively avoid system overheating caused by the operation of the memory storage device.

Description

Data transmission method, memory control circuit unit and memory storage device

technical field

The present invention relates to a data transmission method, and in particular to a data transmission method, a memory control circuit unit and a memory storage device.

Background technique

Digital cameras, mobile phones, and MP3 players have grown rapidly in recent years, making consumers' demand for storage media also increase rapidly. Since rewritable non-volatile memory (rewritable non-volatile memory) has the characteristics of data non-volatility, power saving, small size, no mechanical structure, fast read and write speed, etc., in recent years, rewritable non-volatile memory The memory industry has become a very popular part of the electronics industry. For example, a solid-state drive using flash memory as a storage medium has been widely used as a hard disk of a computer host to improve the access performance of the computer.

In addition, since such a memory storage device with a rewritable non-volatile memory is operating at a high speed, for example, when writing and reading a large amount of data, it needs to consume a lot of energy and generate a lot of heat, so it is easy to Cause the temperature of the memory storage device to be too high, reduce its access efficiency or cause its damage. Based on this, while taking into account the access performance and execution performance of the memory storage device, in order to avoid the system overheating phenomenon caused by the operation of the memory storage device, maintaining the balance of heat generation and heat dissipation of the system is an unavoidable task for the continuous improvement of the computer system's working performance. missing important issues.

Contents of the invention

The invention provides a data transmission method, a memory control circuit unit and a memory storage device, which can effectively reduce power consumption, and further make the heat generation and heat dissipation of the memory storage device reach a stable state.

An embodiment of the present invention proposes a data transmission method for a memory storage device with a rewritable non-volatile memory module. The data transmission method includes: (a) initially setting the first threshold and the first Accumulated value; (b) update the first threshold value by adding the first accumulated value to the first threshold value at intervals of a first predetermined time; (c) receive write data; (d) detect memory storage device temperature; (e) determining whether the temperature of the memory storage device is greater than or equal to the temperature threshold, wherein if the temperature of the memory storage device is not greater than or equal to the temperature threshold, step (f) is performed and if the temperature of the memory storage device is greater than or equal to When the temperature threshold value is reached, perform step (g); (f) write the written data to the rewritable non-volatile memory module; (g) determine whether the size of the written data is greater than or equal to the first threshold value, wherein If the size of the written data is not greater than or equal to the first threshold value, perform step (h) and if the size of the written data is greater than or equal to the first threshold value, perform step (i); (h) is to write Writing data to the rewritable non-volatile memory module and updating the first threshold by subtracting the size of the written data from the first threshold; and (i) not writing the written data to the rewritable The non-volatile memory module re-executes step (g) after the first preset time.

In an embodiment of the present invention, the step of setting the first accumulation value includes: if the temperature of the memory storage device is not greater than or equal to the temperature threshold value, setting the first accumulation value with the first value; and if When the temperature of the memory storage device is greater than or equal to the temperature threshold value, the first accumulation value is set with the second value. In particular, the first value is greater than the second value.

In an embodiment of the present invention, the above-mentioned maximum data volume value is initially set every first predefined time; the step of updating the first threshold value by adding the first accumulated value to the first threshold value includes: Add the first accumulated value to the first threshold value to obtain an update value; if the temperature of the memory storage device is not greater than or equal to the temperature threshold value, update the first threshold value with the update value; if the temperature of the memory storage device is greater than or equal to When it is equal to the temperature threshold value, judge whether the update value is greater than or equal to the maximum data volume value; if the update value is not greater than or equal to the maximum data volume value, use this update value to update the first threshold value; and if the update value is greater than Or when it is equal to the maximum data volume value, update the first threshold value with the maximum data volume value.

In an embodiment of the present invention, when the temperature of the memory storage device is not greater than or equal to the temperature threshold, the first threshold is greater than or equal to the maximum data volume.

In an embodiment of the present invention, the above-mentioned data transmission method further includes: (j) initially setting the second threshold value and the second accumulation value; (k) every second predetermined time, by setting the second Adding the second accumulated value to the threshold value to update the second threshold value; (l) receiving a read command; (m) detecting the temperature of the memory storage device; (n) judging whether the temperature of the memory storage device is greater than or equal to the temperature threshold value , wherein if the temperature is not greater than or equal to the temperature threshold value, perform step (o) and if the temperature is greater than or equal to the temperature threshold value, perform step (p); (o) read from the rewritable non-volatile memory module The read data corresponding to the read command; and (p) judging whether the size of the read data to be read from the rewritable non-volatile memory module is greater than or equal to the second threshold value, if the size of the read data is not When greater than or equal to the second threshold value, perform step (q) and if the size of the read data is greater than or equal to the second threshold value, perform step (r); wherein step (q) is from the rewritable non-volatile The memory module reads the read data corresponding to the read instruction and updates the second threshold value by subtracting the size of the read data from the second threshold value; and step (r) is not from the rewritable non-volatile memory The read data is read in the module and step (p) is re-executed after a second preset time.

In an embodiment of the present invention, the step of setting the second accumulated value includes: if the temperature of the memory storage device is not greater than or equal to the temperature threshold value, setting the second accumulated value with a third value; and if When the temperature of the memory storage device is greater than or equal to the temperature threshold value, the second accumulation value is set with the fourth value. In particular, the third value is greater than the fourth value.

An embodiment of the present invention provides a memory control circuit unit for controlling a rewritable non-volatile memory module of a memory storage device. The memory control circuit unit includes: a host interface for coupling to a host system; a memory interface coupled to the rewritable non-volatile memory module; and a memory management circuit coupled to the host interface and the memory interface. The memory management circuit initially sets the first threshold value and the first accumulated value, and updates the first threshold value by adding the first accumulated value to the first threshold value at intervals of a predefined time. The memory management circuit is also used to receive write data; the memory management circuit is also used to detect the temperature of the memory storage device and determine whether the temperature of the memory storage device is greater than or equal to the temperature threshold; if the temperature of the memory storage device is not greater than or equal to When the temperature threshold is reached, the memory management circuit will send a first command sequence, and the first command sequence is used to instruct to execute a data write operation, so as to write the write data into the rewritable non-volatile Memory module; if the temperature of the memory storage device is greater than or equal to the temperature threshold value, the memory management circuit is also used to execute the first data amount judgment operation to determine whether the size of the written data is greater than or equal to the first threshold value; if the write When the size of the data is not greater than or equal to the first threshold value, the memory management circuit will send the first command sequence, and the first command sequence is used to instruct the execution of the data write operation, so as to write the write data into the rewritable non-volatile The volatile memory module updates the first threshold value by subtracting the size of the written data from the first threshold value; if the size of the written data is not greater than or equal to the first threshold value, the memory management circuit will perform a suspend write operation , so as not to write the write data into the rewritable non-volatile memory module and re-execute the above-mentioned first data amount judging operation after a preset time.

In an embodiment of the present invention, in the above-mentioned operation of setting the first accumulation value, the memory management circuit will detect the temperature of the memory storage device, and determine whether the temperature of the memory storage device is greater than or equal to the temperature threshold value; When the temperature of the device is not greater than or equal to the temperature threshold value, the memory management circuit will set the first accumulated value with the first value, and if the temperature of the memory storage device is greater than or equal to the temperature threshold value, the memory management circuit will set the first accumulated value with the second value value to set the first accumulated value, where the first value is greater than the second value.

In an embodiment of the present invention, in the operation of updating the first threshold value by adding the first accumulated value to the first threshold value every first predetermined time, the memory management circuit will initially set the maximum data and adding the first threshold value to the first accumulation value to obtain an update value, wherein if the temperature of the memory storage device is not greater than or equal to the temperature threshold value, the memory management circuit will update the first threshold value with the update value, On the contrary, if the temperature of the memory storage device is greater than or equal to the temperature threshold value, the memory management circuit will judge whether the update value is greater than or equal to the maximum data volume value; wherein if the update value is not greater than or equal to the maximum data volume value, the memory management circuit The circuit updates the first threshold value with the update value; and if the update value is greater than or equal to the maximum data volume value, the memory management circuit updates the first threshold value with the maximum data volume value.

In an embodiment of the present invention, when the temperature of the memory storage device is not greater than or equal to the temperature threshold, the first threshold is greater than or equal to the maximum data volume.

In an embodiment of the present invention, the above-mentioned memory management circuit is also used to initially set the second threshold value and the second accumulation value, and every second predetermined time, by adding the second threshold value to the second accumulation value value to update the second threshold. Wherein the memory management circuit is also used for receiving a read command from the host system and detecting the temperature of the memory storage device and judging whether the temperature of the memory storage device is greater than or equal to the temperature threshold value; if the temperature of the memory storage device is not greater than or equal to the temperature threshold value , the memory management circuit will send a second command sequence, and the second command sequence is used to instruct the execution of a data read operation, so as to read the read data corresponding to the read command from the rewritable non-volatile memory module; if When the temperature of the memory storage device is greater than or equal to the temperature threshold value, the memory management circuit is also used to perform a second data amount judgment operation to judge whether the size of the read data to be read from the rewritable non-volatile memory module is greater than or equal to the second threshold. If the size of the read data is not greater than or equal to the second threshold value, the memory management circuit will send a second command sequence, and the second command sequence is used to instruct to execute a data read operation to read data from the rewritable non-volatile memory The module reads the read data corresponding to the read instruction and updates the second threshold by subtracting the size of the read data from the second threshold, and if the size of the read data is greater than or equal to the second threshold, the memory The management circuit executes the suspend read operation, so as not to read the read data from the rewritable non-volatile memory module, and re-executes the above-mentioned second data amount judgment operation after a second preset time.

In an embodiment of the present invention, in the above-mentioned operation of setting the second accumulated value, the memory management circuit will detect the temperature of the memory storage device, and determine whether the temperature of the memory storage device is greater than or equal to the temperature threshold value; When the temperature of the device is not greater than or equal to the temperature threshold value, the memory management circuit will set the second accumulated value with the third value, and if the temperature of the memory storage device is greater than or equal to the temperature threshold value, the memory management circuit will set the second accumulated value with the fourth value value to set the second accumulated value, where the third value is greater than the fourth value.

An embodiment of the present invention provides a memory storage device, which includes: a connector for coupling to a host system, a rewritable non-volatile memory module, and a memory control circuit unit. The memory control circuit unit is coupled to the connector and the rewritable non-volatile memory module, and initially sets the first threshold value and the first accumulation value, and at intervals of a predefined time, by adding the first threshold value Up the first accumulated value to update the first threshold value. The memory control circuit unit is also used to receive write data and detect the temperature of the memory storage device and determine whether the temperature of the memory storage device is greater than or equal to the temperature threshold; if the temperature of the memory storage device is not greater than or equal to the temperature threshold, the memory control The circuit unit will send a first command sequence, and the first command sequence is used to instruct the execution of a data write operation to write the write data into the rewritable non-volatile memory module; if the temperature of the memory storage device is greater than or equal to When the temperature threshold value is reached, the memory control circuit unit will perform a first data volume judgment operation to determine whether the size of the written data is greater than or equal to the first threshold value; if the size of the written data is not greater than or equal to the first threshold value, The memory control circuit unit will send a first command sequence, and the first command sequence is used to instruct to execute a data writing operation, so as to write the write data into the rewritable non-volatile memory module and by subtracting the first threshold value the size of the written data to update the first threshold value; and if the size of the written data is not greater than or equal to the first threshold value, the memory control circuit unit executes a suspend writing operation so as not to write the written data into The rewritable non-volatile memory module re-executes the above-mentioned first data amount judging operation after a preset time.

In an embodiment of the present invention, in the operation of setting the first accumulative value, if the temperature of the memory storage device is not greater than or equal to the temperature threshold value, the memory control circuit unit will set the first accumulated value with the first value. The accumulative value, and if the temperature of the memory storage device is greater than or equal to the temperature threshold value, the memory control circuit unit will set the first accumulative value with the second value. Wherein the first value is greater than the second value.

In an embodiment of the present invention, in the operation of updating the first threshold value by adding the first accumulated value to the first threshold value every first predetermined time, the memory control circuit unit initially sets the maximum and adding the first threshold value to the first accumulation value to obtain an update value, wherein if the temperature of the memory storage device is not greater than or equal to the temperature threshold value, the memory control circuit unit will update the first threshold with the update value value; on the contrary, if the temperature of the memory storage device is greater than or equal to the temperature threshold value, the memory control circuit unit will judge whether the update value is greater than or equal to the maximum data volume value; wherein if the update value is not greater than or equal to the maximum data volume value , the memory control circuit unit updates the first threshold value with the update value, and if the update value is greater than or equal to the maximum data volume value, the memory control circuit unit updates the first threshold value with the maximum data volume value.

In an embodiment of the present invention, when the temperature of the memory storage device is not greater than or equal to the temperature threshold, the first threshold is greater than or equal to the maximum data volume.

In an embodiment of the present invention, the above-mentioned memory control circuit unit is also used to initially set the second threshold value and the second accumulation value, and every second predefined time, by adding the second threshold value to the second The values are accumulated to update the second threshold. The memory control circuit unit is also used to receive a read command from the host system and detect the temperature of the memory storage device and determine whether the temperature of the memory storage device is greater than or equal to the temperature threshold; if the temperature of the memory control circuit unit is not greater than or equal to the temperature threshold value, the memory control circuit unit will send a second command sequence, and the second command sequence is used to instruct the execution of a data read operation to read the read data corresponding to the read command from the rewritable non-volatile memory module ; If the temperature of the memory storage device is greater than or equal to the temperature threshold value, the memory control circuit unit will perform a second data amount judgment operation to judge whether the size of the read data to be read from the rewritable non-volatile memory module is greater than or equal to the second threshold value, wherein if the size of the read data is not greater than or equal to the second threshold value, the memory control circuit unit will send a second command sequence, and the second command sequence is used to instruct the execution of the data read operation, Read the read data corresponding to the read command from the rewritable non-volatile memory module and update the second threshold by subtracting the size of the read data from the second threshold, and if the size of the read data When greater than or equal to the second threshold value, the memory control circuit unit will execute the suspend read operation, so as not to read the read data from the rewritable non-volatile memory module and re-execute the above-mentioned operation after the second preset time The second data amount judgment operation.

In an embodiment of the present invention, in the operation of setting the second accumulated value, if the temperature of the memory storage device is not greater than or equal to the temperature threshold value, the memory control circuit unit will set the second accumulative value with the third value. The accumulative value, and if the temperature of the memory storage device is greater than or equal to the temperature threshold value, the memory control circuit unit will set the second accumulative value with the fourth value. Wherein the third value is greater than the fourth value.

Based on the above, the data transmission method, the memory control circuit unit and the memory storage device of the above-mentioned embodiments can effectively control the rate of data access when the temperature of the memory storage device rises to a threshold, thereby reducing power consumption, thus avoiding The overheating of the memory storage system caused by continuous access to large amounts of data.

In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail with reference to the accompanying drawings.

Description of drawings

FIG. 1A is a schematic diagram of a host system and a memory storage device according to a first embodiment of the present invention;

1B is a schematic diagram of a computer, an input/output device and a memory storage device according to an embodiment of the present invention;

1C is a schematic diagram of a host system and a memory storage device according to an embodiment of the present invention;

FIG. 2 is a schematic structural view showing the memory storage device shown in FIG. 1A;

3 is a schematic structural diagram of a memory control circuit unit according to a first embodiment of the present invention;

FIG. 4 is a flowchart of a write data transmission method according to the first embodiment of the present invention;

FIG. 5 is a flowchart of a method for reading data transmission according to the first embodiment of the present invention;

Fig. 6 is a flow chart showing the steps of updating the threshold value according to the first embodiment of the present invention;

Fig. 7 is a flow chart of a data transmission method for dynamically updating accumulated values according to a second embodiment of the present invention;

Fig. 8 is a flow chart of a read data transmission method for dynamically updating an accumulated value according to a second embodiment of the present invention.

Explanation of reference signs

1000: host system;

1100: computer;

1102: microprocessor;

1104: random access memory (RAM);

1106: input/output device;

1108: system bus;

1110: data transmission interface;

1202: mouse;

1204: keyboard;

1206: display;

1208: printer;

1212: Walkman;

1214: memory card;

1216: SSD;

1310: digital camera;

1312: SD card;

1314: MMC card;

1316: memory stick;

1318: CF card;

1320: embedded storage device;

100: memory storage device;

102: connect the interface unit;

104: memory control circuit unit;

106: a rewritable non-volatile memory module;

108(0)～108(R): physical deletion unit;

202: memory management circuit;

204: host interface;

206: memory interface;

208: buffer memory;

210: power management circuit;

212: error checking and correction circuit;

S401, S403, S405, S407, S409, S411, S413, S415, S417: the step of writing the data transmission method;

S501, S503, S505, S507, S509, S511, S513, S515, S517: the steps of reading the data transmission method;

S601, S603, S605, S607, S609, S611, S613: the step of updating the threshold value;

S701, S703, S705, S707, S709, S711, S713, S715, S717, S719, S721, S723, S725: the steps of the writing data transmission method for dynamically updating the accumulated value;

S801, S803, S805, S807, S809, S811, S813, S815, S817, S819, S821, S823, S825: Steps in the reading data transmission method for dynamically updating the accumulated value.

Detailed ways

[first embodiment]

Generally speaking, a memory storage device (also called a memory storage system) includes a rewritable non-volatile memory module and a controller (also called a control circuit). Typically memory storage devices are used with a host system so that the host system can write data to or read data from the memory storage device.

1A is a schematic diagram of a host system and a memory storage device according to a first embodiment of the present invention; FIG. 1B is a schematic diagram of a computer, an input/output device and a memory storage device according to an embodiment of the present invention; FIG. 1C It is a schematic diagram of a host system and a memory storage device according to an embodiment of the present invention.

Referring to FIG. 1A , the host system 1000 generally includes a computer 1100 and an input/output (input/output, I/O for short) device 1106 . The computer 1100 includes a microprocessor 1102 , a random access memory (random access memory, RAM for short) 1104 , a system bus 1108 and a data transmission interface 1110 . The input/output device 1106 includes a mouse 1202, a keyboard 1204, a monitor 1206 and a printer 1208 as shown in FIG. 1B. It must be understood that the device shown in FIG. 1B is not limited to the I/O device 1106, and the I/O device 1106 may also include other devices.

In the embodiment of the present invention, the memory storage device 100 is electrically connected with other components of the host system 1000 through the data transmission interface 1110 . Data can be written into the memory storage device 100 or read from the memory storage device 100 through the operation of the microprocessor 1102 , the random access memory 1104 and the input/output device 1106 . For example, the memory storage device 100 may be a rewritable non-volatile memory storage device such as a Walkman 1212, a memory card 1214, or a Solid State Drive (SSD for short) 1216 as shown in FIG. 1B.

In general, the host system 1000 is any system that can substantially cooperate with the memory storage device 100 to store data. Although in this embodiment, the host system 1000 is described as a computer system, however, in another embodiment of the present invention, the host system 1000 may be a system such as a digital camera, a video camera, a communication device, an audio player, or a video player. . For example, when the host computer system is the digital camera (video camera) 1310 in FIG. CF card 1318 or embedded storage device 1320 (as shown in FIG. 1C ). The embedded storage device 1320 includes an embedded multimedia card (Embedded MMC, eMMC for short). It is worth mentioning that the embedded multimedia card is directly electrically connected to the substrate of the host system.

FIG. 2 is a schematic diagram showing the structure of the memory storage device shown in FIG. 1A .

Referring to FIG. 2 , the memory storage device 100 includes a connection interface unit 102 , a memory control circuit unit 104 and a rewritable non-volatile memory module 106 .

In this embodiment, the connection interface unit 102 is compatible with the Serial Advanced Technology Attachment (SATA for short) standard. However, it must be understood that the present invention is not limited thereto, and the connection interface unit 102 may also be in compliance with Parallel Advanced Technology Attachment (Parallel Advanced Technology Attachment, referred to as: PATA) standard, Institute of Electrical and Electronic Engineers (Institute of Electrical and Electronic Engineers, referred to as: IEEE) 1394 standard, Peripheral Component Interconnect Express (referred to as: PCI Express) standard, Universal Serial Bus (referred to as: USB) standard, Ultra High Speed-I (referred to as: UHS- I) Interface standard, Ultra High Speed-II (abbreviation: UHS-II) interface standard, Secure Digital (abbreviation: SD) interface standard, memory stick (Memory Stick, abbreviation: MS) interface standard , Multi Media Card (Multi Media Card, abbreviated: MMC) interface standard, Compact Flash (abbreviated: CF) interface standard, Integrated Device Electronics (abbreviated: IDE) standard or other suitable standards . In this embodiment, the connector and the memory control circuit unit can be packaged in a chip, or arranged outside a chip including the memory control circuit unit.

The memory control circuit unit 104 is used to execute a plurality of logic gates or control instructions implemented in the form of hardware or firmware, and write data in the rewritable non-volatile memory module 106 according to the instructions of the host system 1000, Read, delete, and merge operations.

The rewritable non-volatile memory module 106 is coupled to the memory control circuit unit 104 and used for storing data written by the host system 1000 . The rewritable nonvolatile memory module 106 has physical erasing units 108(0)˜108(R). For example, the physical deletion units 108(0)-108(R) may belong to the same memory die or belong to different memory dies. Each physical deletion unit has a plurality of physical programming units, wherein the physical programming units belonging to the same physical deletion unit can be written independently and deleted simultaneously. In addition, each physical deletion unit may be composed of 64 physical programming units, 256 physical programming units or any other number of physical programming units.

In more detail, the physical deletion unit is the smallest unit of deletion. That is, each physical deletion unit contains one of the minimum number of deleted storage units. The physical programming unit is the smallest unit of programming. That is, the physical programming unit is the minimum unit for writing data. Each physical programming unit usually includes a data bit area and a redundant bit area. The data bit area contains multiple physical access addresses for storing user data, and the redundant bit area is used for storing system data (eg, control information and error correction code). In this embodiment, the data bit area of each physical programming unit includes 4 physical access addresses, and the size of one physical access address is 512 bytes. However, in other embodiments, the data bit area may also include more or less physical access addresses, and the present invention does not limit the size and number of physical access addresses. For example, in one embodiment, the physical deletion unit is a physical block, and the physical programming unit is a physical page or a physical sector, but the invention is not limited thereto.

In this embodiment, the rewritable non-volatile memory module 106 is a multi-level memory cell (Multi LevelCell, MLC for short) NAND flash memory module (that is, a flash memory module that can store 2 bits of data in one memory cell). flash memory module). However, the present invention is not limited thereto, and the rewritable non-volatile memory module 106 may also be a single-level memory cell (Single Level Cell, referred to as: SLC) NAND flash memory module (that is, one memory cell can store one bit data flash memory module), complex layer storage unit (Trinary Level Cell, referred to as: TLC) NAND flash memory module (that is, a flash memory module that can store 3 bits of data in a storage unit), other fast flash memory module or other memory modules with the same characteristics.

FIG. 3 is a schematic structural diagram of a memory control circuit unit according to the first embodiment of the present invention.

Referring to FIG. 3 , the memory control circuit unit 104 includes a memory management circuit 202 , a host interface 204 and a memory interface 206 .

The memory management circuit 202 is used to control the overall operation of the memory control circuit unit 104 . Specifically, the memory management circuit 202 has a plurality of control commands, and when the memory storage device 100 is operating, these control commands are executed to perform operations such as writing, reading, and deleting data.

In this embodiment, the control commands of the memory management circuit 202 are implemented in the form of firmware. For example, the memory management circuit 202 has a microprocessor unit (not shown) and a read-only memory (not shown), and these control instructions are burned into the read-only memory. When the memory storage device 100 is in operation, these control instructions will be executed by the microprocessor unit to perform operations such as writing, reading, and deleting data.

In another embodiment of the present invention, the control instructions of the memory management circuit 202 can also be stored in a specific area of the rewritable non-volatile memory module 106 in the form of program code (for example, the system area dedicated to storing system data in the memory module )middle. In addition, the memory management circuit 202 has a microprocessor unit (not shown), a read only memory (not shown) and a random access memory (not shown). In particular, the ROM has a driver code, and when the memory control circuit unit 104 is intelligent, the microprocessor unit will first execute the driver code segment to store the control code stored in the rewritable non-volatile memory module 106. The instructions are loaded into random access memory of the memory management circuit 202 . Afterwards, the microprocessor unit runs these control instructions to perform operations such as writing, reading, and deleting data.

The host interface 204 is coupled to the memory management circuit 202 and configured to be coupled to the connection interface unit 102 for receiving and identifying instructions and data transmitted by the host system 1000 . That is to say, the commands and data transmitted by the host system 1000 are transmitted to the memory management circuit 202 through the host interface 204 . In this embodiment, the host interface 204 is compatible with the SATA standard. However, it must be understood that the present invention is not limited thereto, and the host interface 204 may also be compatible with PATA standard, IEEE1394 standard, PCI Express standard, USB standard, UHS-I interface standard, UHS-II interface standard, SD standard, MS standard, MMC standard, CF standard, IDE standard or other suitable data transmission standards.

The memory interface 206 is coupled to the memory management circuit 202 and used for accessing the rewritable non-volatile memory module 106 . That is to say, the data to be written into the rewritable nonvolatile memory module 106 will be converted into a format acceptable to the rewritable nonvolatile memory module 106 via the memory interface 206 .

In an embodiment of the present invention, the memory control circuit unit 104 further includes a buffer memory 208 , a power management circuit 210 and an error checking and correction circuit 212 .

The buffer memory 208 is coupled to the memory management circuit 202 and used for temporarily storing data and instructions from the host system 1000 or data from the rewritable non-volatile memory module 106 .

The power management circuit 210 is coupled to the memory management circuit 202 and used for controlling the power of the memory storage device 100 .

The error checking and correcting circuit 212 is coupled to the memory management circuit 202 and used for executing error checking and correcting procedures to ensure the correctness of data. Specifically, when the memory management circuit 202 receives a write command from the host system 1000, the error checking and correcting circuit 212 will generate a corresponding error checking and correcting code (Error Checking and Correcting Code) for the data corresponding to the write command. , Abbreviation: ECC Code), and the memory management circuit 202 will write the data corresponding to the write command and the corresponding ECC code into the rewritable non-volatile memory module 106 . Afterwards, when the memory management circuit 202 reads data from the rewritable non-volatile memory module 106, it will simultaneously read the error checking and correction code corresponding to the data, and the error checking and correction circuit 212 will read the error checking and correction code according to the error checking and correction code. The correction code performs error checking and correction procedures on the read data.

Please refer to FIG. 2 again, the memory control circuit unit 104 (or the memory management circuit 202) will initially set the first threshold value and the first accumulated value, and set the first threshold value at intervals of a predefined time (for example, 1 millisecond) value plus the first accumulated value to update the first threshold value. Especially, when receiving the data to be written into the rewritable non-volatile memory module 106 transmitted by the host system 1000, the memory control circuit unit 104 (or the memory management circuit 202) will detect the temperature of the memory storage device 100 and It is determined whether the temperature of the memory storage device 100 is greater than or equal to a temperature threshold. If the temperature of the memory storage device 100 is not greater than or equal to the temperature threshold, the memory control circuit unit 104 (or the memory management circuit 202) will send a command sequence (command sequence), which is used to instruct the write data to be written To the rewritable non-volatile memory module, especially, the command sequence can be one or a plurality of commands. Conversely, if the temperature of the memory storage device 100 is greater than or equal to the temperature threshold, the memory control circuit unit 104 (or the memory management circuit 202) will perform a first data amount judgment operation to determine whether the size of the written data is greater than or equal to the threshold value. Set the first threshold value. If the size of the written data is not greater than or equal to the first threshold value, the memory control circuit unit 104 (or the memory management circuit 202) will send a command sequence, which is used to instruct the execution of the data write operation, so as to write Data is written into the rewritable non-volatile memory module 106 and the first threshold is updated by subtracting the size of the written data from the first threshold. On the contrary, when the size of the written data is greater than or equal to the first threshold value, the memory control circuit unit 104 (or the memory management circuit 202) will execute the suspend write operation, and will not write the write data to the rewritable non-volatile memory. The volatile memory module 106 re-executes the above operation of judging whether the size of the written data is greater than or equal to the first threshold value after a first preset time period (for example, 1 millisecond).

Specifically, through the above-mentioned data transmission method, the power consumption can be reduced by limiting the data transmission rate. For example, if it is desired to limit the data transmission rate to 100MB/s (equivalent to transmitting 200 sector data of 512 bytes (Byte) every 1 millisecond (ms), and it is assumed that the memory control circuit unit 104 (or the memory management circuit 202 ) initially set the first threshold value to 300 and the first accumulation value to 200, and the memory control circuit unit 104 (or memory management circuit 202) will add the first threshold value to the first accumulation value every 1 millisecond to update the first threshold. When the data to be written into the rewritable non-volatile memory module 106 is 200 sector data, the memory control circuit unit 104 (or memory management circuit 202) will determine the size of the written data (200 sector data) If it is not greater than or equal to the set first threshold value (300), write 200 sector data to the rewritable non-volatile memory module 106 and subtract the size of the written data from the first threshold value to update the first threshold. At this time, the updated first threshold value is 100. If the first accumulated value is added to the first threshold value after 1 millisecond, the first threshold value will become 300, and the write data received by the memory control circuit unit 104 (or memory management circuit 202) is 500 sector data, the memory control circuit unit 104 (or memory management circuit 202) judges that the size of the written data (500 sector data) is greater than or equal to the current first threshold value (300), so it will execute the pause write operation, without writing the write data into the rewritable non-volatile memory module 106 and re-determining whether the size of the write data is greater than or equal to the first threshold value after 1 millisecond. Since the memory control circuit unit 104 (or the memory management circuit 202) adds the first accumulated value to the first threshold value every 1 millisecond to update the first threshold value, when re-judging whether the size of the written data is greater than or equal to the first When the threshold value is reached, the updated first threshold value has become 500. At this time, the memory control circuit unit 104 (or memory management circuit 202) will judge that the size of the written data (500 sector data) is not greater than or equal to the current first threshold value. Threshold value (500), write the write data into the rewritable non-volatile memory module 106 and update the first threshold value according to the above steps, so that the control data write rate can be maintained at 100MB/s.

It is worth mentioning that the data writing operation and the data reading operation of the rewritable non-volatile memory module 106 require different power consumption, especially, when the data reading operation is performed, its output/input operation There are more operations than data writing, so the temperature of the memory storage device 100 rises relatively faster under data reading operations. Therefore, in an embodiment, in order to achieve a stable state of heat generation and heat dissipation, the speed of data transmission can be limited by setting different thresholds and accumulation values for the data writing operation and the data reading operation respectively.

The memory control circuit unit 104 (or the memory management circuit 202) initially sets the second threshold value and the second accumulated value for the data read operation, and sets the second threshold value every second predetermined time (for example, 1 millisecond). The threshold value is added to the second accumulated value to update the second threshold value. When the memory control circuit unit 104 (or the memory management circuit 202) receives a read instruction from the host system to read the data in the rewritable non-volatile memory module 106, the memory control circuit unit 104 (or the memory management circuit 202) The circuit 202) detects the temperature of the memory storage device 100 and determines whether the temperature of the memory storage device 100 is greater than or equal to the temperature threshold. If the temperature of the memory storage device 100 is not greater than or equal to the temperature threshold value, the memory control circuit unit 104 (or the memory management circuit 202) will send a command sequence (command sequence), which is used to indicate from the rewritable non-volatile The volatile memory module reads the read data corresponding to the read command. On the contrary, if the temperature of the memory storage device 100 is greater than or equal to the temperature threshold value, the memory control circuit unit 104 (or the memory management circuit 202) will perform the second data volume judgment operation to judge the data volume to be read from the rewritable non-volatile memory. Whether the size of the read data read by the module 106 is greater than or equal to the second threshold. If the size of the read data is not greater than or equal to the second threshold value, the memory control circuit unit 104 (or the memory management circuit 202) will send an instruction sequence, which is used to instruct the execution of the data read operation, so as to read from the rewritable The non-volatile memory module 106 reads the read data corresponding to the read command and subtracts the size of the read data from the second threshold to update the second threshold. Conversely, if the size of the read data is greater than or equal to the second threshold value, the memory control circuit unit 104 (or the memory management circuit 202) will perform a suspend read operation without reading from the rewritable non-volatile memory module 106. Read the read data and re-execute the above-mentioned second data amount judgment operation of judging whether the size of the read data is greater than or equal to the second threshold value after a second preset time (for example, 1 millisecond).

Specifically, since the power consumption required for the data reading operation is larger than that for the data writing operation, the above-mentioned second threshold value and the second accumulation value can be set to values smaller than the first threshold value and the first accumulation value respectively. . For example, when the first threshold value is set to 300, the second threshold value can be set to 200, and when the first accumulated value is set to 200, the second accumulated value can be set to 100.

It is worth mentioning that when the memory storage device 100 operates, for example, when a large amount of data is continuously written and read, it needs to consume a large amount of energy and generate a large amount of heat energy, thus easily causing the memory storage device 100 to overheat. In this embodiment, the memory control circuit unit 104 (or the memory management circuit 202 ) is also used to detect the temperature of the memory storage device 100 and determine whether the temperature of the memory storage device 100 is greater than or equal to the temperature threshold. When the memory control circuit unit 104 (or the memory management circuit 202) judges that the temperature of the memory storage device 100 is greater than or equal to the temperature threshold value, that is, when the memory storage device 100 is overheated, the above-mentioned first data amount judgment operation or the second operation will be executed. Two data volume judging operations, and execute data writing operation or suspend writing operation according to the first data volume judging operation, and execute data reading operation or suspend reading operation according to the second data volume judging operation.

In particular, since the memory control circuit unit 104 (or the memory management circuit 202) will add the first threshold value to the first accumulation value every predefined time (for example, 1 millisecond) to update the first threshold value, so for When the temperature of the memory storage device 100 exceeds the temperature threshold, the first threshold is controlled to remain within a certain range, and the memory control circuit unit 104 (or memory management circuit 202) will calculate a maximum data before updating the first threshold value, and after adding the first threshold value to the first accumulated value to obtain the update value of the first threshold value, detect the temperature of the memory storage device 100 and determine whether the temperature of the memory storage device 100 is greater than or equal to the temperature threshold value; if the memory When the temperature of the storage device 100 is not greater than or equal to the temperature threshold value, the memory control circuit unit 104 (or the memory management circuit 202) will update the first threshold value with an updated value; especially, if the temperature of the memory storage device 100 is greater than or equal to When the temperature threshold is reached, the memory control circuit unit 104 (or the memory management circuit 202 ) will determine whether the update value is greater than or equal to the calculated maximum data size value. If the update value is not greater than or equal to the maximum data volume value, the memory control circuit unit 104 (or memory management circuit 202) will update the first threshold value with the update value, otherwise, update the first threshold value with the maximum data volume value . Here, the maximum data volume is a system default value, however, the present invention is not limited thereto, and the maximum data volume can also be adjusted and set according to the execution performance of the rewritable non-volatile memory module 106 .

Fig. 4 is a flow chart of a write data transmission method according to the first embodiment of the present invention.

Referring to FIG. 4 , in step S401 , the memory control circuit unit 104 (or the memory management circuit 202 ) initially sets a first threshold value and a first accumulation value. Moreover, in step S403, the memory control circuit unit 104 (or the memory management circuit 202) updates the first threshold value by adding the first accumulation value to the first threshold value at intervals of a first predefined time (for example, 1 millisecond). a threshold value.

In step S405, the memory control circuit unit 104 (or memory management circuit 202) receives the data to be written into the rewritable non-volatile memory module 106 transmitted by the host system 1000, and in step S407 the memory control circuit unit 104 (or the memory management circuit 202 ) detects the temperature of the memory storage device 100 .

In step S409, the memory control circuit unit 104 (or the memory management circuit 202) determines whether the detected temperature of the memory storage device 100 is greater than or equal to a temperature threshold. If the temperature of the memory storage device 100 is not greater than or equal to the temperature threshold, then in step S411, the memory control circuit unit 104 (or the memory management circuit 202) will perform a normal data write operation to write the received write data Write to the rewritable non-volatile memory module 106 . On the contrary, when the temperature of the memory storage device 100 is greater than or equal to the temperature threshold, in step S413 , the memory control circuit unit 104 (or the memory management circuit 202 ) will perform a data size determination operation.

In step S413, the memory control circuit unit 104 (or the memory management circuit 202) determines whether the size of the written data is greater than or equal to the first threshold. If the size of the written data is not greater than or equal to the first threshold value, then in step S415, the memory control circuit unit 104 (or the memory management circuit 202) will perform a data writing operation to write the written data into the available The rewritable non-volatile memory module 106 also updates the first threshold by subtracting the size of the written data from the first threshold. On the contrary, when the size of the written data is greater than or equal to the first threshold value, then in step S417, the memory control circuit unit 104 (or the memory management circuit 202) will execute the suspend write operation without writing the write data into Go to the rewritable non-volatile memory module 106 and re-execute step S413 after the first preset time (for example, 1 millisecond).

In particular, since in step S403, the memory control circuit unit 104 (or the memory management circuit 202) will add the first threshold value to the first accumulation value at intervals of a first predefined time (for example, 1 millisecond) Update the first threshold value, so the first threshold value will constantly change, that is to say, the suspension of the writing operation performed in the above step S417 will be until the first threshold value is updated to the size equivalent to the written data (also That is, step S415 is executed only when the size of the written data is not greater than or equal to the first threshold value), thereby controlling the data writing speed to reduce power consumption.

Fig. 5 is a flow chart of a read data transmission method according to the first embodiment of the present invention.

Referring to FIG. 5 , first, in step S501 , the memory control circuit unit 104 (or the memory management circuit 202 ) initially sets the second threshold value and the second accumulation value. Moreover, in step S503, the memory control circuit unit 104 (or the memory management circuit 202) updates the second threshold by adding the second accumulated value to the second threshold every second predefined time (for example, 1 millisecond). Two thresholds.

In step S505, when the memory control circuit unit 104 (or memory management circuit 202) receives a read instruction from the host system 1000, and intends to read data from the rewritable non-volatile memory module 106, it will then proceed in step S507 , the temperature of the memory storage device 100 is detected.

In step S509, the memory control circuit unit 104 (or the memory management circuit 202) determines whether the detected temperature of the memory storage device 100 is greater than or equal to a temperature threshold. If the temperature of the memory storage device 100 is not greater than or equal to the temperature threshold, then in step S511, the memory control circuit unit 104 (or the memory management circuit 202) will perform a general data read operation to read from the rewritable non-volatile The permanent memory module 106 reads the read data corresponding to the read command. On the contrary, when the temperature of the memory storage device 100 is greater than or equal to the temperature threshold, in step S513 , the memory control circuit unit 104 (or the memory management circuit 202 ) will perform a data size determination operation.

In step S513 , the memory control circuit unit 104 (or the memory management circuit 202 ) determines whether the size of the read data to be read from the rewritable non-volatile memory module 106 is greater than or equal to the second threshold. If the size of the read data is not greater than or equal to the second threshold value, then in step S515, the memory control circuit unit 104 (or the memory management circuit 202) will perform a data read operation to read from the rewritable non-volatile The memory module 106 reads the data to be read and updates the second threshold by subtracting the size of the read data from the second threshold. Conversely, when the size of the written data is greater than or equal to the second threshold value, then in step S517, the memory control circuit unit 104 (or the memory management circuit 202) will perform a suspend read operation without starting from the rewritable non-volatile The data to be read is read from the volatile memory module 106 and step S513 is re-executed after a second preset time (for example, 1 millisecond).

In particular, since in step S503, the memory control circuit unit 104 (or the memory management circuit 202) will add the second threshold value to the second accumulation value every second predetermined time (for example, 1 millisecond) The second threshold value is updated, so the second threshold value will constantly change. That is to say, the suspend reading operation performed in the above step S517 will be updated until the second threshold value is equivalent to the size of the read data (that is, the size of the read data is not greater than or equal to the second threshold value) , step S515 will be executed, thereby controlling the data reading speed to reduce power consumption.

Fig. 6 is a flow chart showing the steps of updating the threshold value according to the first embodiment of the present invention.

Please refer to FIG. 6, in step S601, the memory control circuit unit 104 (or the memory management circuit 202) will initially set a maximum data volume value, and the maximum data volume value is a system default value, however, the present invention does not Limited to this, the maximum data size can also be adjusted and set according to the execution performance of the rewritable non-volatile memory module 106 .

Since in this embodiment, the memory control circuit unit 104 (or the memory management circuit 202) will continuously add the first threshold value to the first accumulated value at intervals of a predefined time to update the first threshold value, therefore, in step S603 Among them, the memory control circuit unit 104 (or the memory management circuit 202 ) first obtains the update value of the first threshold value plus the first accumulated value.

Next, in step S605, the memory control circuit unit 104 (or memory management circuit 202) detects the temperature of the memory storage device 100, and in step S607, determines whether the temperature of the memory storage device 100 is greater than or equal to the temperature threshold. Especially, if the temperature of the memory storage device 100 is greater than or equal to the temperature threshold, the memory control circuit unit 104 (or the memory management circuit 202 ) will execute steps S609 - S613 for limiting the first threshold. In step S609, the memory control circuit unit 104 (or the memory management circuit 202) determines whether the update value is greater than or equal to the maximum data size value. If the update value is greater than or equal to the maximum data volume value, then in step S611, the memory control circuit unit 104 (or memory management circuit 202) will update the first threshold value with the maximum data volume value; otherwise, in step S613, The memory control circuit unit 104 (or the memory management circuit 202 ) updates the first threshold with the updated value. Therefore, when the temperature of the memory storage device 100 rises to the temperature threshold, the memory control circuit unit 104 (or the memory management circuit 202 ) will control the first threshold to remain within a certain range. It is worth mentioning that if the temperature of the memory storage device 100 is not greater than or equal to the temperature threshold, the memory control circuit unit 104 (or the memory management circuit 202) will update the first threshold with the updated value (step S615), and The first threshold is not limited by the maximum data volume, that is, when the temperature of the memory storage device 100 is not greater than or equal to the temperature threshold, the first threshold may be greater than or equal to the maximum data volume.

[Second embodiment]

The memory storage device and the host system of the second embodiment of the present invention are essentially the same as the memory storage device and the host system of the first embodiment, wherein the difference is that the first accumulated value of the second embodiment can be based on the temperature of the memory storage device adjusted for changes. The differences between the second embodiment and the first embodiment will be described below using the device structures of FIG. 1A , FIG. 2 and FIG. 3 .

In this embodiment, in the operation of setting the first accumulated value, the memory control circuit unit 104 (or the memory management circuit 202) will detect the temperature of the memory storage device 100, and determine whether the temperature of the memory storage device 100 is greater than or equal to temperature threshold. If the temperature of the memory storage device 100 is not greater than or equal to the temperature threshold, the memory control circuit unit 104 (or the memory management circuit 202 ) sets the first accumulated value with the first value. On the contrary, when the temperature of the memory storage device 100 is greater than or equal to the temperature threshold value, the first accumulated value is set with the second value, wherein the first value is greater than or equal to the second value. Specifically, when the temperature of the memory storage device 100 does not reach the temperature threshold, the memory control circuit unit 104 (or the memory management circuit 202) will not execute the data transmission method for limiting the data transmission rate described in the first embodiment, Therefore, a larger first value can be used to set the first accumulative value to increase the data transmission rate and the access performance of the memory storage device 100 during operation.

Fig. 7 is a flow chart of a writing data transmission method for dynamically updating an accumulated value according to a second embodiment of the present invention.

Referring to FIG. 7 , in step S701 , the memory control circuit unit 104 (or the memory management circuit 202 ) initially sets the first threshold value, the first value and the second value. Wherein the first value will be set to a value greater than the second value.

In step S703, the memory control circuit unit 104 (or memory management circuit 202) detects the temperature of the memory storage device 100, and in step S705, determines whether the detected temperature of the memory storage device 100 is greater than or equal to the temperature threshold. If the temperature of the memory storage device 100 is greater than or equal to the temperature threshold value, then in step S707, the memory control circuit unit 104 (or the memory management circuit 202) will set the first accumulation value with a smaller second value; otherwise, when If the temperature of the memory storage device 100 is not greater than or equal to the temperature threshold, then in step S709 , the memory control circuit unit 104 (or the memory management circuit 202 ) sets the first accumulated value with a larger first value.

Next, step S711 to step S725 are the same as step S403 to step S417 of the write data transmission method in FIG. 4 of the first embodiment, and will not be repeated here. In particular, after step S719 and step S723 are executed, it returns to step S703 to execute steps S703 to S709 of dynamically setting the first accumulation value.

Fig. 8 is a flow chart of a read data transmission method for dynamically updating an accumulated value according to a second embodiment of the present invention.

Referring to FIG. 8 , in step S801 , the memory control circuit unit 104 (or the memory management circuit 202 ) initially sets the second threshold value, the third value and the fourth value. Wherein the third value will be set to a value greater than the fourth value.

In step S803, the memory control circuit unit 104 (or memory management circuit 202) detects the temperature of the memory storage device 100, and in step S805, determines whether the detected temperature of the memory storage device 100 is greater than or equal to the temperature threshold. If the temperature of the memory storage device 100 is greater than or equal to the temperature threshold value, then in step S807, the memory control circuit unit 104 (or the memory management circuit 202) will set the second accumulation value with a smaller fourth value, otherwise, when If the temperature of the memory storage device 100 is not greater than or equal to the temperature threshold, then in step S809 , the memory control circuit unit 104 (or the memory management circuit 202 ) sets the second accumulation value with a larger third value.

Next, step S811 to step S825 are the same as step S503 to step S517 of the read data transmission method in FIG. 5 of the first embodiment, and will not be repeated here. In particular, after step S819 and step S823 are executed, it returns to step S803 to execute step S803 to step S809 of adjusting the second accumulated value.

To sum up, the data transmission method, the memory control circuit unit and the memory storage device of the embodiment of the present invention will limit the data transmission rate by controlling the threshold value when the temperature of the memory storage device reaches the threshold value, thereby reducing power consumption, Furthermore, the overheating phenomenon of the system caused by the fast and large amount of data access during the operation of the memory storage device is avoided. In addition, the data transmission method, the memory control circuit unit, and the memory storage device in this embodiment can also dynamically set the accumulation value according to the temperature of the memory storage device, so that the heat generation and heat dissipation balance of the memory storage device can be considered. Under this circumstance, the data transmission rate and data access performance are improved.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: it can still be Modifications are made to the technical solutions described in the foregoing embodiments, or equivalent replacements are made to some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the various embodiments of the present invention.

Claims (18)

1. a kind of data transmission method, it is characterised in that this method is used for having a reproducible nonvolatile memorizer module A memorizer memory devices, which includes：

(a) one first threshold value and one first accumulated value are initially set；

(b) every one first pre-defined time, by by first threshold value plus first accumulated value with update this first Threshold value；

(c) a write-in data are received；

(d) temperature of the memorizer memory devices is detected；

(e) judge whether the temperature of the memorizer memory devices is greater than or equal to a temperature threshold value, if wherein the storage When the temperature of device storage device is less than the temperature threshold value, if this of execution step (f) and the memorizer memory devices When temperature is greater than or equal to the temperature threshold value, step (g) is performed；

(f) the write-in data are write to the reproducible nonvolatile memorizer module；

(g) judge whether the size of the write-in data is greater than or equal to first threshold value, if wherein the write-in data it is big When being less than first threshold value, if the size for performing step (h) and the write-in data is greater than or equal to first threshold During value, step (i) is performed；

(h) the write-in data are write to the reproducible nonvolatile memorizer module and by the way that first threshold value is subtracted The sizes of the write-in data is gone to update first threshold value；And

(i) not by the write-in data write to the reproducible nonvolatile memorizer module and one first preset time it After re-execute step (g).

2. data transmission method according to claim 1, it is characterised in that the step of above-mentioned setting first accumulated value wraps Include：

It is first cumulative to set this with one first value if the temperature of the memorizer memory devices is less than the temperature threshold value Value；And

If the temperature of the memorizer memory devices is greater than or equal to the temperature threshold value, with a second value come set this One accumulated value,

Wherein first value is more than the second value.

3. data transmission method according to claim 1, it is characterised in that it is above-mentioned every the first pre-defined time, By the way that first threshold value is included plus first accumulated value with updating the step of first threshold value：

Initially set a maximum data value；

First threshold value is added into first accumulated value to obtain a updated value；

If the temperature of the memorizer memory devices is less than the temperature threshold value, which is updated with the updated value Value；

If the temperature of the memorizer memory devices is greater than or equal to the temperature threshold value, judge whether the updated value is more than Or equal to the maximum data value；

If the updated value is less than the maximum data value, which is updated with the updated value；And

If the updated value is greater than or equal to the maximum data value, which is updated with the maximum data value Value.

4. data transmission method according to claim 3, it is characterised in that if the temperature of the memorizer memory devices During less than the temperature threshold value, which is greater than or equal to the maximum data value.

5. data transmission method according to claim 1, it is characterised in that further include：

(j) one second threshold value and one second accumulated value are initially set；

(k) every one second pre-defined time, by by second threshold value plus second accumulated value with update this second Threshold value；

(l) receive one and read instruction；

(m) temperature of the memorizer memory devices is detected；

(n) judge whether the temperature of the memorizer memory devices is greater than or equal to the temperature threshold value, if wherein the temperature During less than the temperature threshold value, if performing step (o) and the temperature is when being greater than or equal to the temperature threshold value, execution step (p)；

(o) read corresponding reading instruction from the reproducible nonvolatile memorizer module one reads data；

(p) whether the size for the reading data for judging to be intended to read from the reproducible nonvolatile memorizer module is more than or waits In second threshold value, if wherein when the size of the reading data is less than second threshold value, if perform step (q) and When the size of the reading data is greater than or equal to second threshold value, step (r) is performed；

(q) from the reproducible nonvolatile memorizer module read the reading data of corresponding reading instruction and pass through by Second threshold value subtracts the sizes of the reading data to update second threshold value；And

(r) do not read from the reproducible nonvolatile memorizer module reading data and one second preset time it After re-execute step (p).

6. data transmission method according to claim 5, it is characterised in that the step of above-mentioned setting second accumulated value wraps Include：

It is second cumulative to set this with one the 3rd value if the temperature of the memorizer memory devices is less than the temperature threshold value Value；And

If the temperature of the memorizer memory devices is greater than or equal to the temperature threshold value, with one the 4th value come set this Two accumulated values,

Wherein the 3rd value is more than the 4th value.

7. a kind of memorizer control circuit unit, it is characterised in that for controlling a duplicative of a memorizer memory devices Non-volatile memory module, the memorizer control circuit unit include：

One host interface, to be coupled to a host computer system；

One memory interface, to be coupled to the reproducible nonvolatile memorizer module；And

One memory management circuitry, is coupled to the host interface and the memory interface,

Wherein the memory management circuitry initially sets one first threshold value and one first accumulated value, and fixed in advance every one The adopted time, by the way that first threshold value is added first accumulated value to update first threshold value,

The wherein memory management circuitry also to receive a write-in data,

Wherein the memory management circuitry also to detect a temperature of the memorizer memory devices and judge the memory store up Whether the temperature of cryopreservation device is greater than or equal to a temperature threshold value,

If wherein the temperature of the memorizer memory devices is less than the temperature threshold value, the memory management circuitry is sending out One first command sequence is sent, which writes the write-in data to indicate to perform data write-in running To the reproducible nonvolatile memorizer module,

If wherein the temperature of the memorizer memory devices is greater than or equal to the temperature threshold value, the memory management circuitry Also running is judged to perform one first data volume, to judge whether the size of the write-in data is greater than or equal to first threshold Value,

If wherein the size of the write-in data is less than first threshold value, which sends first instruction Sequence, first command sequence write the write-in data to the duplicative to indicate to perform data write-in running Non-volatile memory module and update first threshold by the way that first threshold value to be subtracted to the size of the write-in data Value,

If wherein the size of the write-in data is greater than or equal to first threshold value, it is temporary which performs one Stop write-in running, which is not write to the reproducible nonvolatile memorizer module and when one first is default Between after re-execute above-mentioned first data volume and judge running.

8. memorizer control circuit unit according to claim 7, it is characterised in that if the memorizer memory devices When the temperature is less than the temperature threshold value, which sets first accumulated value with one first value,

If wherein the temperature of the memorizer memory devices is greater than or equal to the temperature threshold value, the memory management circuitry First accumulated value is set with a second value,

Wherein first value is more than the second value.

9. memorizer control circuit unit according to claim 8, it is characterised in that above-mentioned first pre-defined every this Time, by the way that first threshold value is added first accumulated value to update in the running of first threshold value, the memory pipe Reason circuit also to initially set a maximum data value and by first threshold value plus first accumulated value to obtain One updated value,

If wherein the temperature of the memorizer memory devices is less than the temperature threshold value, the memory management circuitry with this more New value updates first threshold value,

If wherein the temperature of the memorizer memory devices is greater than or equal to the temperature threshold value, the memory management circuitry Also to judge whether the updated value is greater than or equal to the maximum data value,

If wherein the updated value is less than the maximum data value, the memory management circuitry with the updated value come update this One threshold value,

If wherein the updated value is greater than or equal to the maximum data value, the memory management circuitry is with the maximum amount of data Value updates first threshold value.

10. memorizer control circuit unit according to claim 9, it is characterised in that if the memorizer memory devices Temperature when being less than the temperature threshold value, which is greater than or equal to the maximum data value.

11. memorizer control circuit unit according to claim 7, it is characterised in that the memory management circuitry is also used Initially to set one second threshold value and one second accumulated value, and every one second pre-defined time, by by this Two threshold values add second accumulated value to update second threshold value,

Wherein the memory management circuitry also reads instruction to receive one from the host computer system,

Wherein the memory management circuitry also to detect the temperature of the memorizer memory devices and judge the memory store up Whether the temperature of cryopreservation device is greater than or equal to the temperature threshold value,

If wherein the temperature of the memorizer memory devices is less than the temperature threshold value, the memory management circuitry is sending out One second command sequence is sent, second command sequence is to indicate to perform digital independent running, with non-easily from the duplicative The property lost memory module reads a reading data of corresponding reading instruction,

If wherein the temperature of the memorizer memory devices is greater than or equal to the temperature threshold value, the memory management circuitry Also running is judged to perform one second data volume, to judge to be intended to be somebody's turn to do from what the reproducible nonvolatile memorizer module was read Whether the size for reading data is greater than or equal to second threshold value,

If wherein the size of the reading data is less than second threshold value, which sends second instruction Sequence, second command sequence is to indicate to perform digital independent running, with from the type nonvolatile mould Block read the reading data of corresponding reading instruction and by second threshold value is subtracted to the size of the reading data with Second threshold value is updated,

If wherein the size of the reading data is greater than or equal to second threshold value, it is temporary which performs one Stop reading running, do not read the reading data from the reproducible nonvolatile memorizer module and when one second is default Between after re-execute above-mentioned second data volume and judge running.

12. memorizer control circuit unit according to claim 11, it is characterised in that if the memorizer memory devices Temperature when being less than the temperature threshold value, which sets second accumulated value with one the 3rd value,

If wherein the temperature of the memorizer memory devices is greater than or equal to the temperature threshold value, the memory management circuitry Second accumulated value is set with one the 4th value,

Wherein the 3rd value is more than the 4th value.

A kind of 13. memorizer memory devices, it is characterised in that including：

A connector, to be coupled to a host computer system；

One reproducible nonvolatile memorizer module；And

One memorizer control circuit unit, is coupled to the connector and the reproducible nonvolatile memorizer module,

Wherein the memorizer control circuit unit initially sets one first threshold value and one first accumulated value, and pre- every one The time is first defined, by the way that first threshold value is added first accumulated value to update first threshold value,

The wherein memorizer control circuit unit also to receive a write-in data,

Wherein the memorizer control circuit unit is also detecting a temperature of the memorizer memory devices and judge the storage Whether the temperature of device storage device is greater than or equal to a temperature threshold value,

If wherein the temperature of the memorizer memory devices is less than the temperature threshold value, which uses To send one first command sequence, first command sequence is to indicate to perform data write-in running, by the write-in data Write to the reproducible nonvolatile memorizer module,

If wherein the temperature of the memorizer memory devices is greater than or equal to the temperature threshold value, the memorizer control circuit Unit also to perform one first data volume judge running, with judge the size of the write-in data whether be greater than or equal to this first Threshold value,

If wherein the size of the write-in data is less than first threshold value, the memorizer control circuit unit send this first The write-in data are write to this and can answered to indicate to perform data write-in running by command sequence, first command sequence Write formula non-volatile memory module and by first threshold value is subtracted to the size of the write-in data with update this first Threshold value,

If wherein the size of the write-in data is greater than or equal to first threshold value, which performs One pause write-in running, which is not write to the reproducible nonvolatile memorizer module and pre- one first If above-mentioned first data volume is re-executed after the time judges running.

14. memorizer memory devices according to claim 13, it is characterised in that if the memorizer memory devices are somebody's turn to do When temperature is less than the temperature threshold value, which sets first accumulated value with one first value,

If wherein the temperature of the memorizer memory devices is greater than or equal to the temperature threshold value, the memorizer control circuit Unit sets first accumulated value with a second value,

Wherein first value is more than the second value.

15. memorizer memory devices according to claim 14, it is characterised in that it is above-mentioned every this first it is pre-defined when Between, by the way that first threshold value is added first accumulated value to update in the running of first threshold value, memory control Circuit unit also to initially set a maximum data value and by first threshold value plus first accumulated value to obtain A updated value is obtained,

If wherein the temperature of the memorizer memory devices is less than the temperature threshold value, the memorizer control circuit unit with The updated value updates first threshold value,

If wherein the temperature of the memorizer memory devices is greater than or equal to the temperature threshold value, the memorizer control circuit Unit also to judge whether the updated value is greater than or equal to the maximum data value,

If wherein the updated value is less than the maximum data value, which is updated with the updated value First threshold value,

If wherein the updated value is greater than or equal to the maximum data value, the memorizer control circuit unit is with the maximum number First threshold value is updated according to value.

16. memorizer memory devices according to claim 15, it is characterised in that if the memorizer memory devices are somebody's turn to do When temperature is less than the temperature threshold value, which is greater than or equal to the maximum data value.

17. memorizer memory devices according to claim 13, it is characterised in that the memorizer control circuit unit is also used Initially to set one second threshold value and one second accumulated value, and every one second pre-defined time, by by this Two threshold values add second accumulated value to update second threshold value,

Wherein the memorizer control circuit unit also reads instruction to receive one from the host computer system,

Wherein the memorizer control circuit unit is also detecting the temperature of the memorizer memory devices and judge the storage Whether the temperature of device storage device is greater than or equal to the temperature threshold value,

If wherein the temperature of the memorizer control circuit unit is less than the temperature threshold value, the memorizer control circuit list Member is to send one second command sequence, and second command sequence is to indicate to perform digital independent running, can be answered from this The reading data that formula non-volatile memory module reads corresponding reading instruction are write,

If wherein the temperature of the memorizer memory devices is greater than or equal to the temperature threshold value, the memorizer control circuit Unit also judges running to perform one second data volume, to judge to be intended to read from the reproducible nonvolatile memorizer module The sizes of the reading data whether be greater than or equal to second threshold value,

If wherein the size of the reading data is less than second threshold value, the memorizer control circuit unit send this second Command sequence, second command sequence is to indicate to perform digital independent running, with from the duplicative non-volatile memories Device module reads the reading data of corresponding reading instruction and by the way that second threshold value is subtracted the big of the reading data It is small to update second threshold value,

If wherein the size of the reading data is greater than or equal to second threshold value, which performs Running is read in one pause, does not read the reading data and pre- one second from the reproducible nonvolatile memorizer module If above-mentioned second data volume is re-executed after the time judges running.

18. memorizer memory devices according to claim 17, it is characterised in that if the memorizer memory devices are somebody's turn to do When temperature is less than the temperature threshold value, which sets second accumulated value with one the 3rd value,

If wherein the temperature of the memorizer memory devices is greater than or equal to the temperature threshold value, the memorizer control circuit Unit sets second accumulated value with one the 4th value,

Wherein the 3rd value is more than the 4th value.