CN104914121A - Method and device for measuring orientation of engineered monocrystal - Google Patents
Method and device for measuring orientation of engineered monocrystal Download PDFInfo
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Abstract
The invention discloses a method and a device for measuring the orientation of an engineered monocrystal. The method comprises the following steps: taking a plane in which the to-be-measured surface of a monocrystal test sample is positioned as a reference plane which is a phi plane; taking a plane in which an X-ray emission device and an X-ray detection device are positioned as a 2theta plane; in a scanning process, by aiming at a monocrystal fixed diffraction angle, rotating the 2theta plane in a certain range by taking a crossed line of the 2theta plane and the phi plane as a rotary shaft, thereby realizing swinging of the X-ray emission device and the X-ray detection device on a diffraction spherical surface; rotating a test sample by taking a shaft vertical to the reference plane as a rotary shaft, wherein the rotary shaft and the reference plane are crossed at a point O, the rotary shaft passes through the point O, and an incidence point for scanning the test sample of the X-ray emission device is the point O all the time; measuring that the X-ray diffraction peak in the diffraction direction is the strongest; and determining a normal direction of a to-be-measured crystal plane in the test sample according to the Bragg law, wherein the normal direction is the orientation of the crystal plane of the monocrystal test sample. The method has low cost and is easy to operate.
Description
Technical field
The present invention relates to monocrystal orientation field of measuring technique, particularly relate to a kind of measuring method and device of through engineering approaches monocrystal orientation.
Background technology
Along with the progressively development of science and technology, improve constantly material property to become current focus in height most advanced and sophisticated manufacture field.As everyone knows, due to the anisotropic of monocrystalline, its mechanical property, magnetic property, electric conductivity aspect is made to have unique advantage.
At present, the product quality in equipment manufacturing fields such as Aeronautics and Astronautics, generating, nuclear industry detects, and particularly at single crystal product article tropism control, and the detection technique of monocrystalline integrality has become the bottleneck of China's high sophisticated technology development.In the recent period, on single-crystal orientation through engineering approaches sensing equipment, only there is external indivedual manufacturer (PROTO company) that single-crystal orientation checkout equipment can be provided.But due to problems such as supplier's technical support, testing standards, cause this kind equipment not put in through engineering approaches application.At present, the testing apparatus abroad provided mainly is divided into following two classes: Laue method mensuration and the instrument utilizing diffractometer additional function to measure single-crystal orientation.Laue method measures the input cost high (about 450,000 dollars) of single-crystal orientation, and high (operating personnel need abundant crystallography knowledge) is required to the specialized capability of operating personnel, simultaneously high to the surface requirements of sample, the scope of application is subject to a definite limitation.And the instrument cost of single-crystal orientation is higher, operation is more complicated, also higher to the requirement of operating personnel to utilize diffractometer additional function to measure.And owing to being additional function, single-crystal orientation test function does not have the calibration system of specialty, only can to the test piece processed along ω scanning direction, in test process, the absorption factor of constantly change affects measuring accuracy, and measurement range is very narrow in θ/2.Therefore, the demand of the through engineering approaches measuring method that monocrystalline industry product realizes low cost, easy to operate, measurement range is wide etc. is day by day to highlight.
Summary of the invention
In view of this, the embodiment of the present invention provides a kind of measuring method and device of through engineering approaches monocrystal orientation, and fundamental purpose realizes low cost through engineering approaches to measure monocrystal orientation.
For achieving the above object, the present invention mainly provides following technical scheme:
On the one hand, embodiments provide a kind of measuring method of through engineering approaches monocrystal orientation, comprise the steps:
With the tested surface place plane of the sample of monocrystal for reference field, described reference field is Ф face, and X ray emitter and X-ray detection device place plane are 2 θ faces;
During scanning, for monocrystal fixed diffraction angle, 2 θ faces with the intersection in itself and Ф face for revolving shaft rotates within the specific limits, thus realize X ray emitter and X-ray detection device swings on diffractive spherical, sample rotates for turning axle with the axle perpendicular to reference field, turning axle and reference field meet at O point, and revolving shaft crosses O point, and the incidence point of X ray emitter scanned sample is always O point;
Record the X-ray diffraction peak detected in diffraction direction the strongest, according to the normal direction of crystal face to be measured in Bragg's law determination sample, described normal direction is the orientation of this crystal face of monocrystal sample.
As preferably, unit angle is often rotated in 2 θ faces, sample rotating 360 degrees, obtain X-ray diffraction peak the strongest time the rotational angle in 2 θ faces and the angle that rotates of sample according to the normal direction of crystal face to be measured in Bragg's law determination sample.
As preferably, the slewing area in 2 θ faces is 0 ° ~ 65 °.
On the other hand, embodiments provide a kind of measurement mechanism of through engineering approaches monocrystal orientation, comprise scanning system and rotating disk, wherein
Rotating disk, is positioned at the below of scanning system, and described rotating disk is at its place rotation with in surface, and the turning axle of described rotating disk is vertical with rotating disk, and the turning axle of rotating disk and rotating disk intersect at O ＇ point, and the sample that driven by rotary disc is placed in O ＇ point rotates;
Scanning system comprises:
Reversing frame, rotates around its revolving shaft, and described revolving shaft is positioned at the tested surface place plane of sample, and is parallel to rotating disk place plane, and the turning axle of revolving shaft and rotating disk intersects at O point;
X ray emitter, launch X ray, scan sample, described X ray emitter is located on reversing frame;
X-ray detection device, receives the X ray through sample diffraction, and X-ray detection device is located on reversing frame;
The revolving shaft of reversing frame is positioned at X ray emitter and X-ray detection device place plane;
In scanning process, described reversing frame rotates within the specific limits along revolving shaft, and described X ray emitter and X-ray detection device swing within the specific limits with described reversing frame, and described sample rotates under the drive of rotating disk; Wherein, reversing frame often rotates sample described in a unit angle and rotates 360 °;
The angle that the reversing frame that the X-ray diffraction peak obtaining detecting in diffraction direction is corresponding time the strongest rotates and the angle that sample rotates, according to the normal direction of crystal face to be measured in Bragg's law determination sample, described normal direction is the orientation of this crystal face of monocrystal sample.
As preferably, described reversing frame is semicircular arc, and the axis of symmetry of reversing frame crosses O point, and X ray emitter and X-ray detection device are symmetricly set on reversing frame relative to the axis of symmetry of reversing frame.
As preferably, described reversing frame has the first arc-shaped rail, the merging that matches of described X ray emitter and X-ray detection device and described first arc-shaped rail can be moved along described first arc-shaped rail.
As preferably, described scanning system also comprises revolution guide frame, described revolution guide frame has the second arc-shaped rail, described reversing frame is connected with revolution guide frame by guide, described guide is assemblied on described second arc-shaped rail, and described guide can slide along described second arc-shaped rail.
As preferably, described revolution guide frame is semicircular arc, and the axis of symmetry of reversing frame crosses O point.
As preferably, the slewing area of described reversing frame is 0 ° ~ 65 °.
Compared with prior art, beneficial effect of the present invention is:
1, the method for the embodiment of the present invention uses θ-θ scan mode, ensure that the incident direction of X ray in measuring process is constant equal to surface level with diffraction direction, avoids absorption factor on the impact of measuring, ensures measuring accuracy.This is the maximum difference of measuring with conventional diffractometer at present.
2, the equipment that the device of the embodiment of the present invention adopts all can adopt the home equipment of existing maturation, and equipment cost is cheaper relatively abroad, and safeguards convenient, reliable.To specific industry use safety, not by external restriction.
3, the method testing process of the embodiment of the present invention is simple to operate, less demanding to the professional knowledge of operating personnel.To workman through simple training, be namely available on the machine and product detected.
4, the detection efficiency of the method mensuration single crystal samples of the embodiment of the present invention is relatively high, and actual detection speed can reach 3-5 minutes/every part.
5, the method that provides of the embodiment of the present invention is not high to the surface requirements detecting sample.Not only can measure sample, also directly can measure the orientation of single crystal product article in production run.
6, the method that the embodiment of the present invention provides can be measured low-angle boundary and then detect monocrystalline integrality, and this feature is not available for current additive method, is also the method and the valuable feature of equipment most.
7, the device that the embodiment of the present invention provides can provide wider ψ angular measurement scope (ψ max=65 °), and this scope is the widest in other like products.
8, the device that the embodiment of the present invention provides directly can be measured the angle that single crystal articles departs from the orientations such as <001>, <011>, <111> and (directly measure product by setting 2 θ angles corresponding thereto, deviation angle can be obtained intuitively, and without the need to converting by measuring other crystal faces).And other method of testings and equipment are orientation inverses by measuring other crystal faces goes out the direction of <001>, <011>, <111>.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the measurement space coordinate system of the inventive method;
Fig. 2 is the schematic diagram of monocrystalline sample to be tested and internal grain coordinate system thereof;
The schematic diagram of Fig. 3 measurement mechanism of the present invention;
Program parameter setting sectional drawing on the implementation process Computer of Fig. 4 the inventive method test monocrystalline silicon;
Fig. 5 is for obtain monocrystalline silicon X-ray diffraction result (plane mode) after treatment;
Program parameter setting sectional drawing on Fig. 6 the inventive method test nickel-base high-temperature single crystal alloy computer-chronograph
Fig. 7 is for obtain nickel-base high-temperature single crystal alloy X-ray diffraction result (pole figure mode) after treatment.
Embodiment
Below in conjunction with specific embodiment, the present invention is described in further detail, but not as a limitation of the invention.In the following description, the not necessarily same embodiment that different " embodiment " or " embodiment " refers to.In addition, special characteristic, structure or feature in one or more embodiment can be combined by any suitable form.
The measuring method of through engineering approaches monocrystal orientation, see Fig. 1, the measurement space coordinate system O-EDA of the method is specific as follows: the reference field of measurement space coordinate system O-EAD is Φ face, namely the face EDOG in figure, the initial point of measurement space coordinate system is O, initial point O is positioned at reference field, and cross the zero line that O point is measurement space coordinate system perpendicular to the line OA of reference field, the line OD in reference field is datum line, crossing O point perpendicular to Φ face and perpendicular to the face of line OD is scanning spigot surface (face AOFE), scanning spigot surface called after Ψ face, X ray emitter (being arranged in a B) and X-ray detection device (being positioned at a C) place plane are that (Fig. 1 face DBCG) 2 Θ faces, 2 Θ faces and Φ face intersect at datum line OD, during scanning 2 Θ faces with datum line OD for axle rotates within the specific limits, and 2 Θ faces are all the time perpendicular to Ψ face, the intersection OF in 2 Θ faces and Ψ face and the angle of zero line OA be angle ψ 0 (due to 2 Θ faces perpendicular to reference field time, angle ψ 0 is zero, and 2 Θ faces can be rotated to both sides either direction, therefore regulation ∠ EOF is acute angle hour angle ψ 0 is just, ∠ EOF is obtuse angle hour angle ψ 0 is negative, for the ease of calculating, during actual measurement, 2 Θ are that positive side is rotated towards angle ψ 0.); X ray emitter B and X-ray detection device C is that axis of symmetry is symmetrical arranged with OF, and in measuring process, ∠ FOC, ∠ FOB degree are equal all the time.
See Fig. 2, the volume coordinate of tested sample is O-xyz, during measurement, sample to be measured is placed on the O point position of measurement space coordinate system, the tested surface of sample overlaps with the reference field of measurement space coordinate system O-EAD, and the initial point of the space coordinates O-xyz of sample overlaps with the initial point of measurement space coordinate system O-EAD, wherein the volume coordinate of sample is in O-xyz, and Ox, Oy and Oz direction overlaps with OE, OD and OA direction in measurement space coordinate system O-EAD respectively.The normal of crystal surface direction of sample is OH, and line OK is the projection of OH on the xOy of face.
In measuring process, use θ-θ scan mode and the method for rotating sample, 2 Θ faces, determine the normal direction of sample crystal face to be measured and the deviation angle of zero line OA.The scope arranging the rotational angle of X ray emitter B and X-ray detection device C place plane 2 Θ is 0 ° to 65 °, and namely the span of angle ψ 0 is 0 ° to 65 °, and the rotational angle of sample in reference field is
angle
span be 0 ° to 360 °, by backswing X-ray source (change the value of angle ψ 0, each minimum value changed is 0.01 °) with rotate sample (change angle
value, each minimum value changed is 0.1 °) ψ 0 He when obtaining X-ray diffraction highest peak
value.Concrete operations are: during scanning, and a unit angle is often rotated in 2 Θ faces, complete the scanning to 360 °, sample.When X-ray diffraction highest peak ψ 0,
be respectively ∠ yOK and ∠ zOH,
and OH and Oz axle clamp angle ∠ zOH=∠ AOF=ψ 0).
The measuring method of the through engineering approaches monocrystal orientation that the embodiment of the present invention provides utilizes monocrystal interior atoms to be the characteristic of rule, periodic arrangement at three dimensions.That is: when a branch of homogeneous X-ray along a direction parallel be irradiated to sample surfaces time, can by changing the mode of incident angle, backswing X-ray source and rotation sample, make this beam line along a certain crystal face angle of diffraction direction incidence of monocrystal, and can must detect strong X-ray diffraction peak in diffraction direction.According to Bragg's law, the angle of diffraction of tested crystal in space coordinates can be determined.And angle separated time that is incident and diffraction direction is the normal direction of this crystal face, this direction of monocrystal is to the orientation of this crystal face.The inventive method cost is low, easy to operate, measurement range is wide.Tested sample (or product) can have engineering surface state.In addition, the Apparatus and system produced by the method for the embodiment of the present invention, can for the hardware and software technical service needing the industry detecting single-crystal orientation to provide specialty.
The measurement mechanism of through engineering approaches monocrystal orientation, comprises scanning system and rotating disk, wherein
Rotating disk 1, is positioned at the below of scanning system, and rotating disk 1 is at its place rotation with in surface, and the turning axle of rotating disk 1 is vertical with rotating disk 1, and the turning axle of rotating disk 1 and rotating disk 1 intersect at O ＇ point, and rotating disk 1 drives the sample 2 being placed in O ＇ point to rotate;
Scanning system comprises:
Reversing frame 3, rotates around its revolving shaft, and revolving shaft revolving shaft is positioned at the tested surface place plane of sample, and is parallel to rotating disk place plane, and the turning axle of revolving shaft and rotating disk intersects at O point;
X ray emitter 4, launch X ray, scan sample, X ray emitter is located on reversing frame;
X-ray detection device 5, receives the X ray through sample diffraction, and X-ray detection device is located on reversing frame;
The revolving shaft of reversing frame is positioned at X ray emitter and X-ray detection device place plane;
In scanning process, reversing frame rotates within the specific limits along its revolving shaft, X ray emitter and X-ray detection device with reversing frame swing within the specific limits (movement locus of X ray emitter and X-ray detection device with O point for the centre of sphere, in the sphere of the ball being radius to the distance of X ray emitter or X-ray detection device with O point.The movement locus place sphere of X ray emitter and X-ray detection device is scanning sphere.), sample rotates under the drive of rotating disk; Wherein, reversing frame often rotates a unit angle sample and rotates 360 °;
The angle that the reversing frame that the X-ray diffraction peak obtaining detecting in diffraction direction is corresponding time the strongest rotates and the angle that sample rotates, according to the normal direction of crystal face to be measured in Bragg's law determination sample, this normal direction is the orientation of this crystal face of monocrystal sample.
The measuring method of the embodiment of the present invention is implemented by the measurement mechanism of the embodiment of the present invention.The reference field of measurement space coordinate system O-EAD in the reference field of the scanning system wherein in measurement mechanism and measuring method, that is Φ face, that is the revolving shaft place plane of reversing frame.In order to measure the sample of different size, the vertical range between rotating disk 1 and scanning system is adjustable.Thus ensure that the tested surface of sample overlaps with the reference field (i.e. Φ face) of scanning system.The adjustment of the vertical range between rotating disk 1 and scanning system can be adjust rotating disk 1 in vertical direction or scanning system realizes.The adjustment of the vertical range between rotating disk 1 and scanning system also can be controlled by computing machine.Those skilled in the art all can select suitable technology to realize from prior art.Do not repeat them here.
Preferred as above-described embodiment, reversing frame 3 is in semicircular arc, and the axis of symmetry of reversing frame crosses O point, and X ray emitter and X-ray detection device are symmetricly set on reversing frame relative to the axis of symmetry of reversing frame.Reversing frame 3 is arranged to the setting that semicircular arc is convenient to X ray emitter and X-ray detection device, and the installation of equipment and location.X ray emitter and X-ray detection device are all arranged along the radial direction of the reversing frame 3 of semicircular arc.In addition, for the ease of X ray emitter and X-ray detection device adjustment, reversing frame 3 has the first arc-shaped rail 301.Be convenient to the position adjusting X ray emitter and X-ray detection device, realize the adjustment of angle of diffraction.Like this, no matter how X ray emitter and X-ray detection device adjust, when angle of diffraction is any value, X ray emitter and X-ray detection device are all arranged along the radial direction of the reversing frame 3 of semicircular arc, and X ray emitter and X-ray detection device point to the O point of measurement space coordinate system system all the time.X ray emitter and X-ray detection device control to adjust along the first arc-shaped rail 301 on reversing frame 3 by computing machine, thus angle of diffraction when adjustment is measured.
Preferred as above-described embodiment, scanning system also comprises revolution guide frame 6, revolution guide frame 6 has the second arc-shaped rail 601, reversing frame 3 is connected with revolution guide frame 6 by guide 7, guide 7 is assemblied on the second arc-shaped rail 601 of revolution guide frame 6, and guide 7 can slide along the second arc-shaped rail 601 of revolution guide frame 6.Arrange revolution guide frame 6 can realize X ray emitter and X-ray detection device and swing back and forth on scanning sphere.Revolution guide frame is semicircular arc, and the axis of symmetry of reversing frame crosses O point.The revolution guide frame place plane of semicircular arc and the reversing frame place plane orthogonal of semicircular arc.
The rotation of the rotation of the measurement mechanism turntable 1 of the embodiment of the present invention and rotational angle, reversing frame 3 and the adjustment of rotational angle and X ray emitter and X-ray detection device are all by computing machine control realization.
By the measuring method of the measurement mechanism enforcement embodiment of the present invention of the embodiment of the present invention, actual measurement is carried out to prove its effect to crystal below.
Example 1
This example is calibrated standard sample for adopting the measuring method of the measurement mechanism of the embodiment of the present invention enforcement embodiment of the present invention.
The turning axle of rotating disk 1 overlaps with the coordinate center line OA in Fig. 1.Rotating disk 1 initial position D point, rotating disk 1 along the angle DOD` turned over counterclockwise is in testing
angle.
One, standard 001 oriented single crystal silicon sample (is right cylinder, upper and lower surface is parallel, utilizes Laue method to record it and depart from about 1 °, 001 direction during purchase), sample is fixed on center of turntable (O ＇ point), tested surface just overlaps with reference field, and is positioned at O point.
The angle of diffraction (θ) of calculated single crystal silicon 001 orientation: according to interplanar distance and incident ray wavelength, for copper target, incident wavelength is 1.54 dusts, and the value being calculated 2 θ angles by Bragg equation is specially 69.142 °.
Input 70 ° as Fig. 4 inputs 2 θ angles on computers, scanning ψ scope is 0 to 65 ° of sweep spacing is 1 ° (namely the value of ψ 0 increases progressively by 1 °, and from 0 ° to 65 °, ψ 0 sweep spacing of the measurement mechanism of the present embodiment is minimum is 0.01 °), input scanning
scope be 0 to 360 degree, sweep spacing be 1 ° (namely
value increase progressively by 1 °, from 0 ° to 360 °, the measurement mechanism of the present embodiment
sweep spacing minimum be 0.1 °).Namely X ray emitter and X-ray detection device place plane (2 Θ face) often swing a unit angle (in this example being 1 °), measure the diffracted intensity within the scope of 360 °, sample.Sample often rotates a unit angle (in this example being 1 °) and measures once.
As the monocrystalline silicon X ray diffracting spectrum of Fig. 7 to be scanning result obtain after calculating polar form, through matching calculate ψ 0 jiao corresponding to X diffraction highest peak be 1.33 °,
angle is 276.05 °.
This routine acquired results is consistent with adopting the result of additive method.
Example 2
Differently from example 1 be that this example carries out actual product measurement for the measuring method that adopts the measurement mechanism of the embodiment of the present invention to implement the embodiment of the present invention.
Get certain one, trade mark nickel-base high-temperature single crystal alloy sample (be square, upper and lower surface is parallel, is to be measuredly oriented to 001 direction, records be oriented to 5.5 ° with Laue), be fixed in center of turntable, tested surface overlaps with reference field, and is positioned at O point.
Calculate the angle of diffraction (θ) of certain trade mark nickel-base high-temperature single crystal alloy 001 orientation: according to interplanar distance and incident ray wavelength, calculating 2 θ angles according to Bragg equation is 119.57 °.
Be 119 ° as Fig. 6 inputs 2 θ angles on computers, input scanning ψ scope is 0 to 65 ° of sweep spacing is 0.1 °, input scanning
scope is 0 to 360 degree, and sweep spacing is 1 °.
As the nickel-base high-temperature single crystal alloy X ray diffracting spectrum of Fig. 7 to be scanning result obtain after calculating polar form, through matching calculate ψ 0 jiao corresponding to X diffraction highest peak be 5.59 °,
angle is 153.77 °.
Example 2 acquired results additive method is verified, demonstrates the accuracy of result, shows that the present invention can measure the orientation of different monocrystal material.
In addition, be less than the sample of 15 degree at Orientation deviation angle, the work efficiency of the embodiment of the present invention reaches 3 minutes/part, meets the requirement that through engineering approaches is measured.
The above; be only the specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; the change that can expect easily or replacement, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of described claim.
Claims (9)
1. the measuring method of through engineering approaches monocrystal orientation, comprises the steps:
With the tested surface place plane of the sample of monocrystal for reference field, described reference field is Ф face, and X ray emitter and X-ray detection device place plane are 2 θ faces;
During scanning, for monocrystal fixed diffraction angle, 2 θ faces with the intersection in itself and Ф face for revolving shaft rotates within the specific limits, thus realize X ray emitter and X-ray detection device swings on diffractive spherical, sample rotates for turning axle with the axle perpendicular to reference field, turning axle and reference field meet at O point, and revolving shaft crosses O point, and the incidence point of X ray emitter scanned sample is always O point;
Record the X-ray diffraction peak detected in diffraction direction the strongest, according to the normal direction of crystal face to be measured in Bragg's law determination sample, described normal direction is the orientation of this crystal face of monocrystal sample.
2. the measuring method of through engineering approaches monocrystal orientation according to claim 1, it is characterized in that, unit angle is often rotated in 2 θ faces, sample rotating 360 degrees, obtain X-ray diffraction peak the strongest time the rotational angle in 2 θ faces and the angle that rotates of sample according to the normal direction of crystal face to be measured in Bragg's law determination sample.
3. the measuring method of through engineering approaches monocrystal orientation according to claim 1, is characterized in that, the slewing area in 2 θ faces is 0 ° ~ 65 °.
4. the measurement mechanism of through engineering approaches monocrystal orientation, is characterized in that, comprises scanning system and rotating disk, wherein
Rotating disk, is positioned at the below of scanning system, and described rotating disk is at its place rotation with in surface, and the turning axle of described rotating disk is vertical with rotating disk, and the turning axle of rotating disk and rotating disk intersect at O ＇ point, and the sample that driven by rotary disc is placed in O ＇ point rotates;
Scanning system comprises:
Reversing frame, rotates around its revolving shaft, and described revolving shaft is positioned at the tested surface place plane of sample, and is parallel to rotating disk place plane, and the turning axle of revolving shaft and rotating disk intersects at O point;
X ray emitter, launch X ray, scan sample, described X ray emitter is located on reversing frame;
X-ray detection device, receives the X ray through sample diffraction, and X-ray detection device is located on reversing frame;
The revolving shaft of reversing frame is positioned at X ray emitter and X-ray detection device place plane;
In scanning process, described reversing frame rotates within the specific limits along revolving shaft, and described X ray emitter and X-ray detection device swing within the specific limits with described reversing frame, and described sample rotates under the drive of rotating disk; Wherein, reversing frame often rotates sample described in a unit angle and rotates 360 °;
The angle that the reversing frame that the X-ray diffraction peak obtaining detecting in diffraction direction is corresponding time the strongest rotates and the angle that sample rotates, according to the normal direction of crystal face to be measured in Bragg's law determination sample, described normal direction is the orientation of this crystal face of monocrystal sample.
5. the measurement mechanism of through engineering approaches monocrystal orientation according to claim 4, it is characterized in that, described reversing frame is semicircular arc, and the axis of symmetry of reversing frame crosses O point, and X ray emitter and X-ray detection device are symmetricly set on reversing frame relative to the axis of symmetry of reversing frame.
6. the measurement mechanism of through engineering approaches monocrystal orientation according to claim 4, it is characterized in that, described reversing frame has the first arc-shaped rail, the merging that matches of described X ray emitter and X-ray detection device and described first arc-shaped rail can be moved along described first arc-shaped rail.
7. the measurement mechanism of through engineering approaches monocrystal orientation according to claim 4, it is characterized in that, described scanning system also comprises revolution guide frame, described revolution guide frame has the second arc-shaped rail, described reversing frame is connected with revolution guide frame by guide, described guide is assemblied on described second arc-shaped rail, and described guide can slide along described second arc-shaped rail.
8. the measurement mechanism of through engineering approaches monocrystal orientation according to claim 4, is characterized in that, described revolution guide frame is semicircular arc, and the axis of symmetry of reversing frame crosses O point.
9. the measurement mechanism of through engineering approaches monocrystal orientation according to claim 4, is characterized in that, the slewing area of described reversing frame is 0 ° ~ 65 °.
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