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CN104932152B - The manufacturing method of liquid crystal display panel and liquid crystal display panel - Google Patents

The manufacturing method of liquid crystal display panel and liquid crystal display panel Download PDF

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Publication number
CN104932152B
CN104932152B CN201510349216.3A CN201510349216A CN104932152B CN 104932152 B CN104932152 B CN 104932152B CN 201510349216 A CN201510349216 A CN 201510349216A CN 104932152 B CN104932152 B CN 104932152B
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liquid crystal
layer
thickness
display panel
array substrate
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CN104932152A (en
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陈彩琴
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1339Gaskets; Spacers; Sealing of cells
    • G02F1/13394Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1339Gaskets; Spacers; Sealing of cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01Manufacture or treatment
    • H10D86/021Manufacture or treatment of multiple TFTs
    • H10D86/0231Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

The present invention provides a kind of liquid crystal display panel and its manufacturing method, the liquid crystal display panel includes array substrate and color membrane substrates, and the array substrate includes data line, scan line, thin film transistor (TFT) and open region.The array substrate further includes patterning flatness layer, it is formed on the data line, the scan line and the thin film transistor (TFT), and expose the open region, the patterning flatness layer being wherein located in the scan line forms a columnar projections, the columnar projections are supported between the array substrate and the color membrane substrates, without additionally making introns, to save the photosensitive type introns processing procedure on color membrane substrates.

Description

液晶显示面板及液晶显示面板的制造方法Liquid crystal display panel and method for manufacturing liquid crystal display panel

【技术领域】【Technical field】

本发明涉及液晶显示领域,特别涉及一种液晶显示面板及液晶显示面板的制造方法。The invention relates to the field of liquid crystal display, in particular to a liquid crystal display panel and a method for manufacturing the liquid crystal display panel.

【背景技术】【Background technique】

传统的液晶显示面板包括彩色滤光片(CF,Color filter)基板、阵列基板以及液晶。该彩膜基板包括第一玻璃基板、黑矩阵(BM,Black Matrix)层、着色图案层和保护层(OC,Over Coat)层,该第一玻璃基板、黑矩阵层、着色图案层和保护层依次层叠设置为一体;阵列基板包括第二玻璃基板、栅极线层、绝缘层、半导体层、金属层和钝化层,该第二玻璃基板、栅极线层、绝缘层、半导体层、金属层和钝化层依次层叠设置为一体。A traditional liquid crystal display panel includes a color filter (CF, Color filter) substrate, an array substrate and a liquid crystal. The color filter substrate includes a first glass substrate, a black matrix (BM, Black Matrix) layer, a colored pattern layer and a protective layer (OC, Over Coat) layer, the first glass substrate, a black matrix layer, a colored pattern layer and a protective layer The array substrate is sequentially stacked and arranged as a whole; the array substrate includes a second glass substrate, a gate line layer, an insulating layer, a semiconductor layer, a metal layer and a passivation layer, and the second glass substrate, a gate line layer, an insulating layer, a semiconductor layer, a metal layer The passivation layer and the passivation layer are sequentially stacked and arranged as a whole.

传统的液晶显示面板的彩膜基板和阵列基板之间是用间隔子(Spacer)来支撑的。彩膜基板和阵列基板叠加组合在一起,并且由于间隔子置于之间而存在固定距离的间隙,液晶置于该间隙内。一般在低温多晶硅(LTPS,Low Temperature Poly-silicon)薄膜晶体管液晶显示器(即LTPS-TFT LCD)中,间隔子是采用感光型间隔子(Photo Spacer,PS)来达成。对于中小尺寸的产品中,感光型间隔子是形成在彩膜基板上,具体彩色滤光片制程为黑矩阵层、着色图案层和保护层完成后,通过使用光掩膜(Photomask)的光刻工艺将感光型间隔子形成在保护层上的特定区域。Spacers are used to support the color filter substrate and the array substrate of a traditional liquid crystal display panel. The color filter substrate and the array substrate are superimposed and combined, and there is a fixed-distance gap between the spacers, and the liquid crystal is placed in the gap. Generally, in a low temperature polysilicon (LTPS, Low Temperature Poly-silicon) thin film transistor liquid crystal display (ie, LTPS-TFT LCD), the spacer is realized by using a photo spacer (PS). For small and medium-sized products, the photosensitive spacers are formed on the color filter substrate. The specific color filter process is that after the black matrix layer, colored pattern layer, and protective layer are completed, photolithography using a photomask (Photomask) The process forms photosensitive spacers on specific areas on the protective layer.

然而,制作感光型间隔子形成于彩膜基板相较于制作传统彩膜基板的制程需要多一次高成本的光刻工艺,不利于成本的降低。However, the production of photosensitive spacers on the color filter substrate requires an additional high-cost photolithography process compared with the traditional color filter substrate, which is not conducive to cost reduction.

【发明内容】【Content of invention】

本发明的一个目的在于提供一种液晶显示面板,其对阵列基板中的平坦层形成一柱状凸起作为间隔子,从而节省在彩膜基板上的感光型间隔子制程。An object of the present invention is to provide a liquid crystal display panel, which forms a columnar protrusion as a spacer on the flat layer of the array substrate, thereby saving the photosensitive spacer process on the color filter substrate.

本发明的另一个目的在于提供一种液晶显示面板的制造方法,其可透过半色调光刻工艺经一次曝光即可制作成平坦层及作为间隔子的柱状凸起,从而节省在彩膜基板上的感光型间隔子制程。Another object of the present invention is to provide a method for manufacturing a liquid crystal display panel, which can be made into a flat layer and columnar protrusions as spacers through a halftone photolithography process through a single exposure, thereby saving the color filter substrate. Photosensitive spacer process.

为解决上述问题,本发明的优选实施例提供了一种液晶显示面板,其包括包括阵列基板及彩膜基板,所述阵列基板包括数据线、扫描线及薄膜晶体管,所述数据线及所述扫描线定义出开口区。所述阵列基板还包括图案化平坦层,其形成于所述数据线、所述扫描线及所述薄膜晶体管上,并暴露出所述开口区,其中位于所述扫描线上的所述图案化平坦层形成一柱状凸起,所述柱状凸起支撑于所述阵列基板及所述彩膜基板之间。In order to solve the above problems, a preferred embodiment of the present invention provides a liquid crystal display panel, which includes an array substrate and a color filter substrate, the array substrate includes data lines, scan lines and thin film transistors, the data lines and the The scan lines define the open area. The array substrate further includes a patterned planar layer, which is formed on the data lines, the scan lines and the thin film transistors, and exposes the opening area, wherein the patterned layers on the scan lines The flat layer forms a columnar protrusion, and the columnar protrusion is supported between the array substrate and the color filter substrate.

在本发明优选实施例中,形成所述柱状凸起的所述图案化平坦层具有一第一厚度,位于所述数据线上的所述图案化平坦层具有一第二厚度,且所述第一厚度大于所述第二厚度。优选地,所述第一厚度介于2.8至3.2微米之间,所述第二厚度介于2.1至2.6微米之间。另外,所述阵列基板及所述彩膜基板之间具有一液晶盒厚度,所述第一厚度等于所述液晶盒厚度。In a preferred embodiment of the present invention, the patterned flat layer forming the columnar protrusion has a first thickness, the patterned flat layer on the data line has a second thickness, and the first A thickness is greater than the second thickness. Preferably, the first thickness is between 2.8 and 3.2 microns, and the second thickness is between 2.1 and 2.6 microns. In addition, there is a thickness of a liquid crystal cell between the array substrate and the color filter substrate, and the first thickness is equal to the thickness of the liquid crystal cell.

在本发明优选实施例中,所述薄膜晶体管为低温多晶硅薄膜晶体管,且所述液晶显示面板为边缘场开关模式显示面板。优选地,所述阵列基板包括衬底基板、并在所述扫描线位置上依次形成在所述衬底基板上的缓冲层、半导体层、栅极绝缘层、栅金属层、层间介电层、所述图案化平坦层、公共电极层、钝化层及像素电极层。In a preferred embodiment of the present invention, the thin film transistor is a low temperature polysilicon thin film transistor, and the liquid crystal display panel is a fringe field switching mode display panel. Preferably, the array substrate includes a base substrate, and a buffer layer, a semiconductor layer, a gate insulating layer, a gate metal layer, and an interlayer dielectric layer are sequentially formed on the base substrate at the position of the scanning line. , the patterned flat layer, common electrode layer, passivation layer and pixel electrode layer.

同样地,为解决上述问题,本发明的另一优选实施例提供了一种液晶显示面板的制造方法,其包括:提供包括数据线、扫描线及薄膜晶体管的阵列基板,所述数据线及所述扫描线定义出开口区;涂布平坦层于所述阵列基板上;采用半色调光刻工艺图案化所述平坦层,以形成位于所述数据线、所述扫描线及所述薄膜晶体管上并暴露出所述开口区的图案化平坦层,其中位于所述扫描线上的所述图案化平坦层形成一柱状凸起;以及结合所述阵列基板及彩膜基板,使得所述柱状凸起支撑于所述阵列基板及所述彩膜基板之间。Similarly, in order to solve the above problems, another preferred embodiment of the present invention provides a method for manufacturing a liquid crystal display panel, which includes: providing an array substrate including data lines, scan lines and thin film transistors, the data lines and the The scanning line defines an opening area; coating a flat layer on the array substrate; patterning the flat layer by using a half-tone photolithography process to form a layer located on the data line, the scanning line and the thin film transistor. And expose the patterned flat layer of the opening area, wherein the patterned flat layer on the scanning line forms a columnar protrusion; and combine the array substrate and the color filter substrate to make the columnar protrusion Supported between the array substrate and the color filter substrate.

在本发明优选实施例中,形成所述柱状凸起的所述图案化平坦层具有一第一厚度,位于所述数据线上的所述图案化平坦层具有一第二厚度,且所述第一厚度大于所述第二厚度。优选地,所述第一厚度介于2.8至3.2微米之间,所述第二厚度介于2.1至2.6微米之间。In a preferred embodiment of the present invention, the patterned flat layer forming the columnar protrusion has a first thickness, the patterned flat layer on the data line has a second thickness, and the first A thickness is greater than the second thickness. Preferably, the first thickness is between 2.8 and 3.2 microns, and the second thickness is between 2.1 and 2.6 microns.

在本发明优选实施例中,结合所述阵列基板及所述彩膜基板后,所述阵列基板及所述彩膜基板之间具有一液晶盒厚度,所述第一厚度等于所述液晶盒厚度。In a preferred embodiment of the present invention, after combining the array substrate and the color filter substrate, there is a liquid crystal cell thickness between the array substrate and the color filter substrate, and the first thickness is equal to the thickness of the liquid crystal cell .

相对于现有技术,本发明对阵列基板中的平坦层透过半色调光刻工艺形成柱状凸起作为阵列基板及彩膜基板之间的间隔子,且去除掉原本在开口区的平坦层,以达到阵列基板与彩膜基板之间的足够的液晶盒厚度,而不需额外制作间隔子,从而节省在彩膜基板上的感光型间隔子制程。Compared with the prior art, the present invention forms columnar protrusions on the flat layer in the array substrate through a halftone photolithography process as a spacer between the array substrate and the color filter substrate, and removes the flat layer originally in the opening area, so as to A sufficient thickness of the liquid crystal cell between the array substrate and the color filter substrate is achieved without additional spacers, thereby saving the photosensitive spacer process on the color filter substrate.

为让本发明的上述内容能更明显易懂,下文特举优选实施例,幷配合所附图式,作详细说明如下:In order to make the above content of the present invention more obvious and easy to understand, the preferred embodiments are specifically cited below, together with the accompanying drawings, and are described in detail as follows:

【附图说明】【Description of drawings】

图1为本发明的液晶显示面板的阵列基板的俯视示意图;1 is a schematic top view of an array substrate of a liquid crystal display panel of the present invention;

图2为图1的液晶显示面板在AA’线段的剖面示意图;Fig. 2 is a schematic cross-sectional view of the liquid crystal display panel of Fig. 1 on the line segment AA';

图3为图1的液晶显示面板在BB’线段的剖面示意图;Fig. 3 is a schematic cross-sectional view of the liquid crystal display panel of Fig. 1 on the line segment BB';

图4为本发明优选实施例的液晶显示面板的制造方法的流程图;4 is a flowchart of a method for manufacturing a liquid crystal display panel in a preferred embodiment of the present invention;

图5A为步骤S10的示意图;FIG. 5A is a schematic diagram of step S10;

图5B为步骤S20的示意图;FIG. 5B is a schematic diagram of step S20;

图5C为步骤S30的示意图;FIG. 5C is a schematic diagram of step S30;

图5D为步骤S40的示意图。FIG. 5D is a schematic diagram of step S40.

【具体实施方式】【Detailed ways】

以下各实施例的说明是参考附加的图式,用以例示本发明可用以实施的特定实施例。The following descriptions of the various embodiments refer to the accompanying drawings to illustrate specific embodiments in which the present invention can be practiced.

参考图1至图3,图1为本发明的液晶显示面板的阵列基板的俯视示意图,图2为图1的液晶显示面板在AA’线段的剖面示意图,图3为图1的液晶显示面板在BB’线段的剖面示意图。如图所示,本实施例的液晶显示面板10包括阵列基板20及彩膜基板30以及两者之间的液晶层(图未示)。Referring to FIGS. 1 to 3, FIG. 1 is a schematic top view of the array substrate of the liquid crystal display panel of the present invention, FIG. 2 is a schematic cross-sectional view of the liquid crystal display panel of FIG. Schematic cross-section of BB' line segment. As shown in the figure, the liquid crystal display panel 10 of this embodiment includes an array substrate 20 , a color filter substrate 30 and a liquid crystal layer (not shown) therebetween.

如图1所示,图1绘示阵列基板20上的一个像素结构,阵列基板20上包括数据线210、扫描线220及薄膜晶体管230,所述数据线210及所述扫描线220定义出开口区240,其中开口区240即可透光区。As shown in FIG. 1, FIG. 1 shows a pixel structure on an array substrate 20. The array substrate 20 includes data lines 210, scan lines 220, and thin film transistors 230. The data lines 210 and the scan lines 220 define openings. The area 240, wherein the opening area 240 is the light-transmitting area.

在此实施例中,薄膜晶体管230为低温多晶硅(LTPS,Low Temperature Poly-silicon)薄膜晶体管。具体而言,如图2所示,阵列基板20包括衬底基板201、并在所述扫描线220位置上依次形成在所述衬底基板201上的缓冲层(Buffer层)202、半导体层203、栅极绝缘层(GI层)204、栅金属层(GE层)205、层间介电层(ILD层)206、图案化平坦层(PLN层)207、公共电极层208、钝化层209及像素电极层210。彩膜基板30包括玻璃基板301、黑矩阵(BM)302、色阻层303、及其上的保护层(OC)304。In this embodiment, the thin film transistor 230 is a low temperature polysilicon (LTPS, Low Temperature Poly-silicon) thin film transistor. Specifically, as shown in FIG. 2, the array substrate 20 includes a base substrate 201, and a buffer layer (Buffer layer) 202 and a semiconductor layer 203 are sequentially formed on the base substrate 201 at the position of the scanning line 220. , gate insulating layer (GI layer) 204, gate metal layer (GE layer) 205, interlayer dielectric layer (ILD layer) 206, patterned flat layer (PLN layer) 207, common electrode layer 208, passivation layer 209 and the pixel electrode layer 210. The color filter substrate 30 includes a glass substrate 301 , a black matrix (BM) 302 , a color resist layer 303 , and an overcoat layer (OC) 304 thereon.

在此实施例中,彩膜基板30上并无设置公共电极,而阵列基板20的公共电极层208、钝化层209及像素电极层210都在同一个基板上,因此本实施例的液晶显示面板10为一种产生水平电场的边缘场开关(FFS,Fringe Filed Switching)模式显示面板。然而本发明并不限于此,AD-SDS(Advanced-Super Dimensional Switching,简称为ADS,高级超维场开关)型、IPS(In Plane Switch,横向电场效应)型、TN(Twist Nematic,扭曲向列)型等的液晶显示面板都在本发明范围中。In this embodiment, no common electrode is provided on the color filter substrate 30, and the common electrode layer 208, the passivation layer 209, and the pixel electrode layer 210 of the array substrate 20 are all on the same substrate, so the liquid crystal display of this embodiment The panel 10 is a fringe field switching (FFS, Fringe Filed Switching) mode display panel that generates a horizontal electric field. However, the present invention is not limited thereto, AD-SDS (Advanced-Super Dimensional Switching, referred to as ADS, advanced super-dimensional field switch) type, IPS (In Plane Switch, transverse electric field effect) type, TN (Twist Nematic, twisted nematic ) type liquid crystal display panels are within the scope of the present invention.

需注意的是,所述图案化平坦层207形成于所述数据线210、扫描线220及薄膜晶体管230上,并暴露出所述开口区240。也就是说,本实施例的图案化平坦层207并非全部覆盖在层间介电层206上,而是在开口区240有挖孔,而露出开口区240的层间介电层206。It should be noted that the patterned planarization layer 207 is formed on the data line 210 , the scan line 220 and the thin film transistor 230 and exposes the opening region 240 . That is to say, the patterned planarization layer 207 of this embodiment does not entirely cover the interlayer dielectric layer 206 , but has holes dug in the opening area 240 to expose the interlayer dielectric layer 206 in the opening area 240 .

参考图1及图2,位于所述扫描线220上的所述图案化平坦层207形成一柱状凸起2071,所述柱状凸起2071支撑于阵列基板20及彩膜基板30之间,而作为两基板之间的间隔子。Referring to FIG. 1 and FIG. 2, the patterned flat layer 207 on the scanning line 220 forms a columnar protrusion 2071, and the columnar protrusion 2071 is supported between the array substrate 20 and the color filter substrate 30, and serves as spacer between the two substrates.

参考图1及图3,图3绘示位于所述数据线210的液晶显示面板10的剖面示意图,此处的阵列基板20包括衬底基板201、并在所述扫描线220位置上依次形成在所述衬底基板201上的栅极绝缘层(GI层)204、层间介电层(ILD层)206、源金属层211、图案化平坦层(PLN层)207、公共电极层208、钝化层209及像素电极层210。Referring to FIG. 1 and FIG. 3, FIG. 3 shows a schematic cross-sectional view of the liquid crystal display panel 10 located on the data line 210, where the array substrate 20 includes a base substrate 201, and is sequentially formed at the position of the scanning line 220. The gate insulating layer (GI layer) 204, interlayer dielectric layer (ILD layer) 206, source metal layer 211, patterned flat layer (PLN layer) 207, common electrode layer 208, passivation layer on the base substrate 201 layer 209 and pixel electrode layer 210.

如图2及图3所示,形成所述柱状凸起2071的所述图案化平坦层207具有一第一厚度T1,位于所述数据线上的所述图案化平坦层具有一第二厚度T2,且所述第一厚度T1大于第二厚度T2。具体而言,在此实施例中,所述第一厚度T1介于2.8至3.2微米(μm)之间,所述第二厚度T2介于2.1至2.6微米之间。如图2如示,阵列基板20及所述彩膜基板30之间具有一液晶盒厚度(Cell gap)Cg,所述第一厚度T1等于所述液晶盒厚度Cg。也就是说,本实施例的柱状凸起2071作为两基板之间的间隔子,即柱状凸起2071的高度等于液晶盒厚度Cg。As shown in FIG. 2 and FIG. 3, the patterned flat layer 207 forming the columnar protrusion 2071 has a first thickness T1, and the patterned flat layer located on the data line has a second thickness T2. , and the first thickness T1 is greater than the second thickness T2. Specifically, in this embodiment, the first thickness T1 is between 2.8 and 3.2 microns (μm), and the second thickness T2 is between 2.1 and 2.6 microns. As shown in FIG. 2 , there is a liquid crystal cell thickness (Cell gap) Cg between the array substrate 20 and the color filter substrate 30 , and the first thickness T1 is equal to the liquid crystal cell thickness Cg. That is to say, the columnar protrusion 2071 of this embodiment acts as a spacer between the two substrates, that is, the height of the columnar protrusion 2071 is equal to the thickness Cg of the liquid crystal cell.

以下将详细说明本实施例的液晶显示面板的制造方法,请一并参阅图4至图5D,图4为本发明优选实施例的液晶显示面板的制造方法的流程图,图5A至5D为步骤S10至S40的示意图。本实施例的液晶显示面板的制造方法开始于步骤S10。The manufacturing method of the liquid crystal display panel of the present embodiment will be described in detail below, please refer to FIGS. 4 to 5D together. FIG. Schematic diagram of S10 to S40. The manufacturing method of the liquid crystal display panel of this embodiment starts at step S10.

请参照图5A,在步骤S10中,提供包括数据线210、扫描线220及薄膜晶体管230的阵列基板20,所述数据线210及所述扫描线220定义出开口区240,然后执行步骤S20。也就是提供衬底基板201、并在所述扫描线220位置上依次形成在所述衬底基板201上的缓冲层202、半导体层203、栅极绝缘层204、栅金属层205、层间介电层206。此步骤为本领域技术人员所熟知的,在此不再详细说明。Referring to FIG. 5A , in step S10 , an array substrate 20 including data lines 210 , scan lines 220 and thin film transistors 230 is provided, the data lines 210 and scan lines 220 define an opening area 240 , and then step S20 is performed. That is, a base substrate 201 is provided, and a buffer layer 202, a semiconductor layer 203, a gate insulating layer 204, a gate metal layer 205, and an interlayer interlayer are sequentially formed on the base substrate 201 at the position of the scanning line 220. Electrical layer 206. This step is well known to those skilled in the art and will not be described in detail here.

请参照图5B,在步骤S20中,涂布平坦层207于所述阵列基板20上,然后执行步骤S30。具体来说,平坦层207为透明的有机材料。Referring to FIG. 5B , in step S20 , a flat layer 207 is coated on the array substrate 20 , and then step S30 is executed. Specifically, the flat layer 207 is a transparent organic material.

请参照图5C,在步骤S30中,采用半色调光刻工艺图案化所述平坦层207,以形成位于所述数据线210、所述扫描线220及所述薄膜晶体管230上并暴露出所述开口区240的图案化平坦层207,然后执行步骤S40,其中位于所述扫描线220上的所述图案化平坦层207形成一柱状凸起2071。值得一提的是,上述半色调光刻工艺包括涂布光刻胶层、预焙、半色调掩模曝光、显影、后焙、蚀刻、剥离光刻胶等工序。Please refer to FIG. 5C, in step S30, the planarization layer 207 is patterned by a half-tone photolithography process to form a After patterning the flat layer 207 in the opening area 240 , step S40 is performed, wherein the patterned flat layer 207 on the scan line 220 forms a columnar protrusion 2071 . It is worth mentioning that the above-mentioned halftone photolithography process includes the steps of coating photoresist layer, prebaking, halftone mask exposure, developing, postbaking, etching, stripping photoresist and so on.

请参照图5D,在步骤S40中,形成公共电极层208、钝化层209及像素电极层210,然后执行步骤S50。此步骤为本领域技术人员所熟知的,在此不再详细说明。Referring to FIG. 5D , in step S40 , a common electrode layer 208 , a passivation layer 209 and a pixel electrode layer 210 are formed, and then step S50 is performed. This step is well known to those skilled in the art and will not be described in detail here.

请再参照图2,在步骤S50中,结合所述阵列基板20及彩膜基板30,使得所述柱状凸起2071支撑于所述阵列基板20及所述彩膜基板30之间,而作为两基板之间的间隔子。Please refer to FIG. 2 again. In step S50, the array substrate 20 and the color filter substrate 30 are combined so that the columnar protrusions 2071 are supported between the array substrate 20 and the color filter substrate 30, as two Spacers between substrates.

同样的,形成所述柱状凸起2071的所述图案化平坦层207具有第一厚度T1,位于所述数据线220上的所述图案化平坦层207具有第二厚度T2,且第一厚度T1大于所述第二厚度T2。优选地,透过半色调光刻工艺可轻易将所述第一厚度T1设置为介于2.8至3.2微米之间,所述第二厚度T2设置为介于2.1至2.6微米之间。如图2所示,结合阵列基板20及彩膜基板30后,所述阵列基板20及所述彩膜基板30之间具有液晶盒厚度Cg,且第一厚度T1等于液晶盒厚度Cg。Similarly, the patterned flat layer 207 forming the columnar protrusion 2071 has a first thickness T1, the patterned flat layer 207 on the data line 220 has a second thickness T2, and the first thickness T1 greater than the second thickness T2. Preferably, the first thickness T1 can be easily set to be between 2.8 to 3.2 micrometers, and the second thickness T2 can be set to be between 2.1 to 2.6 micrometers through a halftone photolithography process. As shown in FIG. 2 , after combining the array substrate 20 and the color filter substrate 30 , there is a liquid crystal cell thickness Cg between the array substrate 20 and the color filter substrate 30 , and the first thickness T1 is equal to the liquid crystal cell thickness Cg.

综上所述,本发明对阵列基板20中的平坦层207透过半色调光刻工艺形成柱状凸起207作为阵列基板20及彩膜基板30之间的间隔子,且去除掉原本在开口区240的平坦层207,以达到阵列基板20与彩膜基板30之间的足够的液晶盒厚度Cg,而不需额外制作间隔子,从而节省在彩膜基板上的感光型间隔子制程。To sum up, the present invention forms columnar protrusions 207 on the flat layer 207 in the array substrate 20 through a halftone photolithography process as spacers between the array substrate 20 and the color filter substrate 30, and removes the spacer in the opening area 240. The planarization layer 207 is used to achieve a sufficient liquid crystal cell thickness Cg between the array substrate 20 and the color filter substrate 30 without additional spacers, thereby saving the photosensitive spacer process on the color filter substrate.

虽然本发明已以优选实施例揭露如上,但上述优选实施例幷非用以限制本发明,本领域的普通技术人员,在不脱离本发明的精神和范围内,均可作各种更动与润饰,因此本发明的保护范围以权利要求界定的范围为准。Although the present invention has been disclosed above with preferred embodiments, the above preferred embodiments are not intended to limit the present invention. Those skilled in the art can make various modifications and changes without departing from the spirit and scope of the present invention. Modification, therefore, the scope of protection of the present invention is subject to the scope defined by the claims.

Claims (10)

1. a kind of manufacturing method of liquid crystal display panel, which is characterized in that including:
There is provided include interlayer dielectric layer, data line, scan line and thin film transistor (TFT) array substrate, the data line and described sweep It retouches line and defines open region, wherein the interlayer dielectric layer is exposed in the open region;
Coating flat layer is in the array substrate;
Using halftoning photoetching process, successively include coating photoresist layer in the flatness layer, prebake, half-tone mask exposure, The processes such as development, rear roasting, etching, stripping photoresist pattern the flatness layer, to be formed positioned at the data line, the scanning On line and the thin film transistor (TFT) and the patterning flatness layer of the open region is exposed, wherein the institute in the scan line It states patterning flatness layer and forms a columnar projections;And
In conjunction with the array substrate and color membrane substrates so that the columnar projections are supported in the array substrate and the color film base Between plate.
2. the manufacturing method of liquid crystal display panel according to claim 1, which is characterized in that form the columnar projections The patterning flatness layer has a first thickness, and being located at the patterning flatness layer on the data line has one second thickness Degree, and the first thickness is more than the second thickness.
3. the manufacturing method of liquid crystal display panel according to claim 2, which is characterized in that the first thickness between Between 2.8 to 3.2 microns, the second thickness is between 2.1 to 2.6 microns.
4. the manufacturing method of liquid crystal display panel according to claim 2, which is characterized in that in conjunction with the array substrate and After the color membrane substrates, there is a thickness of liquid crystal box, described first thickness etc. between the array substrate and the color membrane substrates In the thickness of liquid crystal box.
5. a kind of liquid crystal display panel, including array substrate and color membrane substrates, the array substrate includes interlayer dielectric layer, data Line, scan line and thin film transistor (TFT), the data line and the scan line define open region, which is characterized in that the array Substrate further includes:
Flatness layer is patterned, is formed on the data line, the scan line and the thin film transistor (TFT), and exposes described open The interlayer dielectric layer is exposed in mouth region, the open region, wherein the patterning flatness layer in the scan line is formed One columnar projections, the columnar projections are supported between the array substrate and the color membrane substrates.
6. liquid crystal display panel according to claim 5, which is characterized in that form the patterning of the columnar projections Flatness layer has a first thickness, and the patterning flatness layer being located on the data line has a second thickness, and described First thickness is more than the second thickness.
7. liquid crystal display panel according to claim 6, which is characterized in that the first thickness is between 2.8 to 3.2 microns Between, the second thickness is between 2.1 to 2.6 microns.
8. liquid crystal display panel according to claim 6, which is characterized in that the array substrate and the color membrane substrates it Between have a thickness of liquid crystal box, the first thickness be equal to the thickness of liquid crystal box.
9. liquid crystal display panel according to claim 5, which is characterized in that the thin film transistor (TFT) is that low temperature polycrystalline silicon is thin Film transistor, and the liquid crystal display panel is fringe field switching mode display panel.
10. liquid crystal display panel according to claim 9, which is characterized in that the array substrate includes underlay substrate, simultaneously Buffer layer on the underlay substrate, semiconductor layer, gate insulating layer, grid metal are sequentially formed in the scan line position Layer, the interlayer dielectric layer, the patterning flatness layer, common electrode layer, passivation layer and pixel electrode layer.
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Publication number Priority date Publication date Assignee Title
CN105223740B (en) * 2015-11-05 2019-01-22 深圳市华星光电技术有限公司 Array substrate and its manufacturing method, liquid crystal display panel
CN105974678B (en) * 2016-07-19 2019-05-07 武汉华星光电技术有限公司 Show equipment and its liquid crystal display panel, liquid crystal display die set
CN106292038A (en) * 2016-10-17 2017-01-04 武汉华星光电技术有限公司 A kind of display panels
CN109003579B (en) * 2018-07-12 2020-05-05 武汉华星光电半导体显示技术有限公司 Pixel structure
CN108897178A (en) * 2018-08-31 2018-11-27 武汉华星光电技术有限公司 Colored filter substrate and display panel
TWI707180B (en) * 2019-11-08 2020-10-11 友達光電股份有限公司 Opposite substrate
CN110928016B (en) * 2019-12-13 2022-02-22 武汉华星光电技术有限公司 Display panel, display device and manufacturing method of display device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002350860A (en) * 2001-05-22 2002-12-04 Matsushita Electric Ind Co Ltd Manufacturing method of liquid crystal display device
JP2002350868A (en) * 2001-05-29 2002-12-04 Matsushita Electric Ind Co Ltd Liquid crystal display device and its manufacturing method
KR100433662B1 (en) * 2001-05-30 2004-05-31 비오이 하이디스 테크놀로지 주식회사 Apparatus for In Plane Switching Liquid Crystal Display
KR20030032248A (en) * 2001-10-17 2003-04-26 비오이 하이디스 테크놀로지 주식회사 Apparatus for thin film transistor liquid crystal display and method for manufacturing the same
JP2006220706A (en) * 2005-02-08 2006-08-24 Sanyo Epson Imaging Devices Corp Method of manufacturing electrooptical device, electrooptical device, and electronic equipment
KR101189275B1 (en) * 2005-08-26 2012-10-09 삼성디스플레이 주식회사 Thin film transistor array panel and method for manufacturing the same
CN202720426U (en) * 2012-08-10 2013-02-06 京东方科技集团股份有限公司 A liquid crystal display substrate and a liquid crystal display device
CN103091897B (en) * 2013-02-01 2015-08-12 信利半导体有限公司 A kind of liquid crystal indicator
CN103293776A (en) * 2013-05-07 2013-09-11 北京京东方光电科技有限公司 Array substrate and preparation method and display device thereof
KR102101734B1 (en) * 2013-12-13 2020-04-21 삼성디스플레이 주식회사 Liquid crystal display apparatus and method for manufacturing the same
CN103852929A (en) * 2014-03-04 2014-06-11 京东方科技集团股份有限公司 Array substrate and display device
CN104330926A (en) * 2014-12-02 2015-02-04 合肥京东方光电科技有限公司 Display substrate as well as manufacturing method and display panel
CN104538357B (en) * 2015-01-13 2018-05-01 合肥京东方光电科技有限公司 Make the method and array base palte of array base palte

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