CN104947056A - Method for preventing short circuit of anode frame by sticking thin teflon film - Google Patents
Method for preventing short circuit of anode frame by sticking thin teflon film Download PDFInfo
- Publication number
- CN104947056A CN104947056A CN201510292857.XA CN201510292857A CN104947056A CN 104947056 A CN104947056 A CN 104947056A CN 201510292857 A CN201510292857 A CN 201510292857A CN 104947056 A CN104947056 A CN 104947056A
- Authority
- CN
- China
- Prior art keywords
- anode frame
- short circuit
- ptfe sheet
- anode
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000004809 Teflon Substances 0.000 title abstract description 6
- 229920006362 Teflon® Polymers 0.000 title abstract description 6
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 30
- 239000004033 plastic Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000741 silica gel Substances 0.000 claims description 3
- 229910002027 silica gel Inorganic materials 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 10
- 238000000151 deposition Methods 0.000 abstract description 6
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000010409 thin film Substances 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000009413 insulation Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000000428 dust Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
A method for preventing a short circuit of an anode frame by sticking a thin teflon film is provided. The invention relates to a technology for depositing thin films through DC (direct current) magnetron sputtering, and particularly to the method for preventing the short circuit of the anode frame by sticking the thin teflon film. The method aims to solve the problem that an existing target and the anode frame are in a short circuit, so that the manufacturing procedure cannot be started or is stopped abnormally. The method for preventing the short circuit of the anode frame by sticking the thin teflon film comprises the steps as follows: step I, determining a sticking area; and step II, sticking the thin teflon film. The method is mainly used for depositing thin films through DC magnetron sputtering.
Description
Technical field
The present invention relates to a kind of Deposited By Dc Magnetron Sputtering thin film technique, be specifically related to a kind of method being prevented anode frame short circuit by bonding ptfe sheet.
Background technology
Thin-film solar cells uses magnetic control d.c. sputtering deposition techniques metal back electrode usually, and back electrode normally which floor conductive film laminate is formed.For top-level metallic rete aluminium rete, its good electroconductibility can as the negative pole of battery, and collected current, welds with welding in welding sequence, is drawn by electric current.With horizontal DC magnetron sputtering device deposition of aluminum rete, this kind of mode can depositing large-area film, and film forming good uniformity, production efficiency is high.But its subject matter is because target surrounding has anode frame to surround, along with duration of service lengthens, piles up a large amount of aluminum dusts between the press strip of target and peripheral anode frame, cause target cathode to be communicated with anode and be short-circuited.
Based on magnetically controlled DC sputtering technology, cause anode and cathode short circuit reason as follows: target is communicated with direct supply as sputter cathode, target outer peripheral areas is anode, and anode all material is stainless steel.Sputtering mode adopts and pass into argon gas in cavate, ionize out argon ion, bombardment target material surface, the aluminium atom overwhelming majority sputtered out is attached on substrate and forms film, but has small part to descend slowly and lightly to target periphery region not, namely near anode frame due to energy, along with duration of service lengthens, make to there is a large amount of aluminium powder forms between anode frame and target press strip, be finally communicated with anode and cathode, be short-circuited.
Once adopted skiving target press strip, and then the distance increased between press strip and anode frame slows down the generation of short circuit phenomenon.But this scheme can not solve short circuit problem completely.
Summary of the invention
The present invention is the problem that the existing target of solution and anode frame short circuit cause processing procedure to start or to abend, and then proposes a kind of method being prevented anode frame short circuit by bonding ptfe sheet.
The present invention takes technical scheme to be for solving the problem:
Described method is realized by following steps:
Step one: determine bonded areas: the surrounding of anode frame is bolted on the upper end of target base, the medial surface that the bonded areas of ptfe sheet is arranged on anode frame is positioned at the inner side of target base;
Step 2: bonding ptfe sheet: the shape of ptfe sheet according to bonded areas is sheared, the ptfe sheet sheared is bonded in the bonded areas on anode frame by high-temperature plastic or high temperature resistant double sticky tape.
The invention has the beneficial effects as follows: use ptfe sheet to be pasted onto on target anode frame, isolated anode frame and target press strip, to solve the problem of short circuit, make processing procedure normally start or carry out, and improves the yield of product.Greatly can extend target maintenance period in addition during volume production, improve plant factor, this kind of processing mode easy handling, cost drops into low, is mainly manifested in following two aspects:
Product aspect: 1, be no longer short-circuited between target stand anode and cathode.Short circuit no longer occurs, and manufacturing process would not cannot start or abend when awaiting orders, and the phenomenon lacking metallic diaphragm also no longer appears in product.2, be no longer short-circuited phenomenon, would not occur because of short circuit cause " " namely phenomenon no longer occurs to burn the phenomenon of product film surface because of spark that point discharge produces in point discharge.3, tetrafluoroethylene (Teflon) has good thermal conductivity, can lead away the heat at dust accumulation place, avoids it to make metallic dust come off on product surface because of thermal expansion.Consider from above 3 points, product yield more than 3% can be improved.
Equipment aspect: this kind of process greatly reduces the maintenance frequency of equipment, and namely improve equipment mobility, production capacity, considering cost reduces more than 1%.According to surrounding anode frame shape, the processing mode of bonding ptfe sheet has simple to operate, the features such as input cost is low.
Accompanying drawing explanation
Fig. 1 is the integrally-built schematic diagram of the magnetically controlled DC sputtering device used in the inventive method; Fig. 2 is the structural representation of bonded areas 3 in the inventive method.
Embodiment
Embodiment one: composition graphs 1 and Fig. 2 illustrate, a kind ofly described in present embodiment prevents the method for anode frame short circuit from being realized by following steps by the ptfe sheet that bonds:
Step one: determine bonded areas: the surrounding of anode frame 1 is bolted on the upper end of target base 2, the medial surface that the bonded areas 3 of ptfe sheet is arranged on anode frame 1 is positioned at the inner side of target base 2;
Step 2: bonding ptfe sheet: the shape of ptfe sheet according to bonded areas 3 is sheared, the ptfe sheet sheared is bonded in by high-temperature plastic or high temperature resistant double sticky tape in the bonded areas 3 on anode frame 1.
In magnetically controlled DC sputtering process, the upper end of target base 2 is provided with insulation layer 4, insulation layer 4 adopts polytetrafluoroethylene floor usually, the both sides of the upper end of insulation layer 4 are provided with two target press strips 5, the upper end of insulation layer 4 is provided with target 6, the upper surface of target base 2 has been bolted anode frame 1, and target 6 is communicated with direct supply as sputter cathode, target outer peripheral areas is anode, and anode all material is stainless steel.Sputtering mode adopts and pass into argon gas in cavate, ionize out argon ion, the surface of bombardment target 6, the aluminium atom overwhelming majority sputtered out is attached on substrate and forms film, but has small part to descend slowly and lightly to target periphery region not, namely near anode frame 1 due to energy, the medial surface of anode frame 1 is bonded with ptfe sheet, isolate between aluminium powder form and anode frame 1, effectively prevent anode and cathode between anode frame 1 with target press strip 5 to be communicated with, be short-circuited.
In addition, use DC magnetron sputtering device depositing metal membrane layer, in sputter procedure, the top temperature of target surface can reach 400 degrees Celsius (target has water coolant to be that it cools behind, and dark space temperature is close to 300 degrees Celsius).For meeting to the requirement of glue of pasting thin slice under this condition, for meeting this environmental requirement, the glue of bonding ptfe sheet is high-temperature plastic.
Before target 6 is installed and used, ptfe sheet to be adhered in the bonded areas on anode frame 1 with high-temperature plastic or high temperature resistant double sticky tape, bonded areas is all regions on anode frame 1 beyond removing and target base 2 FX.
Embodiment two: composition graphs 1 and Fig. 2 illustrate, in step 2 described in present embodiment, the thickness of ptfe sheet is 100 μm ~ 500 μm.Other method steps is identical with embodiment one.
For ensureing insulation effect, the thickness of ptfe sheet is 100 μm ~ 500 μm, in addition can be used on anode frame 1 and adhere to certain thickness polytetrafluorethylecoatings coatings replacement ptfe sheet, also can replace tetrafluoroethylene with other high-temperature insulation body materials.
Embodiment three: composition graphs 1 and Fig. 2 illustrate, in step 2 described in present embodiment, high-temperature plastic is high temperature resistant silica gel.Other method steps is identical with embodiment one.
High-temperature plastic preferably can use DOW CORNING 736 organic silica gel, and high temperature resistant double sticky tape can preferably with the excellent DY4589 in Shanghai, and the sizing agent of high temperature resistant double sticky tape is Japanese SHIN-ETSU HANTOTAI organic pressure-sensitive gel, ptfe sheet is bonded in bonded areas 3.
Claims (3)
1. prevented a method for anode frame short circuit by bonding ptfe sheet, it is characterized in that: described method is realized by following steps:
Step one: determine bonded areas: the surrounding of anode frame (1) is bolted on the upper end of target base (2), the medial surface that the bonded areas (3) of ptfe sheet is arranged on anode frame (1) is positioned at the inner side of target base (2);
Step 2: bonding ptfe sheet: the shape of ptfe sheet according to bonded areas (3) is sheared, the ptfe sheet sheared is bonded in by high-temperature plastic or high temperature resistant double sticky tape in the bonded areas (3) on anode frame (1).
2. a kind ofly according to claim 1 prevent the method for anode frame short circuit by bonding ptfe sheet, it is characterized in that: in described step 2, the thickness of ptfe sheet is 100 μm ~ 500 μm.
3. a kind ofly according to claim 1 prevent the method for anode frame short circuit by bonding ptfe sheet, it is characterized in that: in described step 2, high-temperature plastic is high temperature resistant silica gel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510292857.XA CN104947056A (en) | 2015-06-01 | 2015-06-01 | Method for preventing short circuit of anode frame by sticking thin teflon film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510292857.XA CN104947056A (en) | 2015-06-01 | 2015-06-01 | Method for preventing short circuit of anode frame by sticking thin teflon film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104947056A true CN104947056A (en) | 2015-09-30 |
Family
ID=54162110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510292857.XA Pending CN104947056A (en) | 2015-06-01 | 2015-06-01 | Method for preventing short circuit of anode frame by sticking thin teflon film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104947056A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102586749A (en) * | 2012-03-12 | 2012-07-18 | 王正安 | Multi-magnetic field magnetron sputtering cathode |
| CN103361612A (en) * | 2012-04-05 | 2013-10-23 | 鸿富锦精密工业（深圳）有限公司 | Cylindrical magnetron sputtering target |
| CN103388124A (en) * | 2012-05-10 | 2013-11-13 | 三星显示有限公司 | Sputter device and method for depositing thin film using the same |
| CN203487226U (en) * | 2013-10-15 | 2014-03-19 | 山东禹城汉能光伏有限公司 | Device for preventing short circuit of planar target seat in magnetron sputtering system |
-
2015
- 2015-06-01 CN CN201510292857.XA patent/CN104947056A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102586749A (en) * | 2012-03-12 | 2012-07-18 | 王正安 | Multi-magnetic field magnetron sputtering cathode |
| CN103361612A (en) * | 2012-04-05 | 2013-10-23 | 鸿富锦精密工业（深圳）有限公司 | Cylindrical magnetron sputtering target |
| CN103388124A (en) * | 2012-05-10 | 2013-11-13 | 三星显示有限公司 | Sputter device and method for depositing thin film using the same |
| CN203487226U (en) * | 2013-10-15 | 2014-03-19 | 山东禹城汉能光伏有限公司 | Device for preventing short circuit of planar target seat in magnetron sputtering system |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| FR2982086B1 (en) | METHOD FOR MANUFACTURING MICRO-BATTERIES IN THIN LITHIUM ION LAYERS, AND MICRO-BATTERIES OBTAINED THEREBY | |
| CN106207099B (en) | A kind of three-dimensional LiMn2O4The preparation method of film positive electrode and three-dimensional solid-State Thin Film Li-Ion Batteries | |
| CN106756840A (en) | A kind of high-temperature flexible transparent conductive film and preparation method and application | |
| CN203741407U (en) | Magnetron sputtering rotating target | |
| CN106299237A (en) | Self-supporting pole piece and preparation method thereof, battery and battery core thereof | |
| CN107768677A (en) | A kind of method for improving lithium ion cell positive colelctor electrode corrosion resisting property | |
| CN104752561A (en) | Heterojunction solar cell and preparation method thereof | |
| CN109786755A (en) | Bipolar battery composite current collector structure and preparation method thereof | |
| CN106435494A (en) | Method for improving electrical performance of positive electrode collector electrode of lithium battery | |
| CN101694852B (en) | A kind of solar cell and manufacturing method | |
| CN114725325A (en) | Lithium supplementing method for silicon-based negative electrode plate of all-solid-state lithium ion battery | |
| CN117423781A (en) | Heterojunction solar cell and preparation method thereof | |
| US20140110245A1 (en) | Non-bonded rotatable targets and their methods of sputtering | |
| CN102828152A (en) | Preparation method of Mo film with low resistance rate | |
| US8349144B2 (en) | Methods of sputtering using a non-bonded semiconducting target | |
| CN114023986B (en) | Composite coating for fuel cell titanium substrate bipolar plate and preparation method thereof | |
| WO2011126709A2 (en) | Doped buffer layer | |
| CN104377261A (en) | CdTe thin-film solar cell panel and manufacturing method | |
| CN104947056A (en) | Method for preventing short circuit of anode frame by sticking thin teflon film | |
| CN106449890B (en) | A kind of preparation method of photovoltaic welding | |
| US8460521B2 (en) | Sputtering cathode having a non-bonded semiconducting target | |
| CN106119795A (en) | Utilize the method that vacuum magnetron sputtering coating film technology prepares lithium battery C Si negative pole coating | |
| CN104213089B (en) | Magnetron sputtering apparatus and magnetically controlled sputter method | |
| SG186574A1 (en) | Non-bonded rotary semiconducting targets andmethods of their sputtering | |
| CN101404304B (en) | Preparation method of polysilicon thin film module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150930 |