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CN104993035B - A kind of warm white LED light-emitting device - Google Patents

A kind of warm white LED light-emitting device Download PDF

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CN104993035B
CN104993035B CN201510458720.7A CN201510458720A CN104993035B CN 104993035 B CN104993035 B CN 104993035B CN 201510458720 A CN201510458720 A CN 201510458720A CN 104993035 B CN104993035 B CN 104993035B
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warm white
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white led
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CN104993035A (en
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陈朝
郑将辉
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Yang Peng
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Xiamen University
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8511Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512Wavelength conversion materials
    • H10H20/8513Wavelength conversion materials having two or more wavelength conversion materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/852Encapsulations
    • H10H20/854Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0361Manufacture or treatment of packages of wavelength conversion means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0362Manufacture or treatment of packages of encapsulations

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Abstract

本发明公开了一种暖白光LED发光装置,包括带有电极和热沉的基座,以及被所述基座包围在内并焊接于所述热沉顶面的LED芯片,所述LED芯片通过金线与所述电极电连接,还包括荧光转换罩,所述荧光转换罩设置在所述基座的上方并罩设住所述LED芯片,所述荧光转换罩由蓝绿红三基色荧光粉和树脂胶体混合固化而成;所述蓝绿红三基色荧光粉的组成成分为:蓝色荧光粉:Sr5(PO4)3Cl:Eu2+;绿色荧光粉:(Ca,Sr)2SiO4:Eu2+;红色荧光粉:CaAlSiN3:Eu2+;所述LED芯片激发波长为220nm~420nm。该暖白光LED发光装置具有色温可调(2500~6000K)、高显色指数(Ra=80~96)且工艺简单、出光效率高的优点。

The invention discloses a warm white LED lighting device, which comprises a base with electrodes and a heat sink, and an LED chip surrounded by the base and welded to the top surface of the heat sink. The gold wire is electrically connected to the electrode, and also includes a fluorescent conversion cover, which is arranged above the base and covers the LED chip, and the fluorescent conversion cover is composed of blue, green and red three primary color phosphors and It is formed by mixing and curing resin colloids; the composition of the blue, green and red phosphors is: blue phosphor: Sr 5 (PO 4 ) 3 Cl:Eu 2+ ; green phosphor: (Ca,Sr) 2 SiO 4 :Eu 2+ ; red phosphor: CaAlSiN 3 :Eu 2+ ; the excitation wavelength of the LED chip is 220nm-420nm. The warm white LED lighting device has the advantages of adjustable color temperature (2500-6000K), high color rendering index (R a =80-96), simple process and high light extraction efficiency.

Description

一种暖白光LED发光装置A warm white LED lighting device

技术领域technical field

本发明涉及照明工程领域,具体涉及一种发光装置,特别是一种暖白光LED发光装置。The invention relates to the field of lighting engineering, in particular to a lighting device, in particular to a warm white LED lighting device.

背景技术Background technique

白光LED发光二极管因其节能、高效、长寿命和环保取代了现有的白炽灯和荧光被称为新一代固体光源。在夜景工程、隧道、商场、信号系统等领域广泛应用。White LED light-emitting diodes are called a new generation of solid light sources because they replace existing incandescent lamps and fluorescent lamps because of their energy saving, high efficiency, long life and environmental protection. It is widely used in night scene projects, tunnels, shopping malls, signal systems and other fields.

目前实现白光LED商用的白光LED由YAG:Ce3+,与发射蓝光的GaN管芯组合而成的荧光转换型白光LED。这种方法制备出白光LED缺少红光区域的光谱,导致其显色指数差,发光效率比较低,大多为冷白光(Tc>6500K),制约了其进入室内照明领域尤其是作为阅读的台灯和灯座的应用。最近,GaN芯片(GaInN)的发射波长正向短波紫光(<420nm)发展,理论上,近紫外光的能量比蓝光要高,制备出的白光LED光效可进一步提高,同时它的光谱范围更宽,显色指数可进一步增加,色温可以进一步下降。开发近紫外和紫光等短波芯片激发的高显指暖的白光LED对LED走向室内照明就显得非常重要。At present, the white light LED that realizes the commercial use of white light LED is a fluorescent conversion white light LED composed of YAG:Ce 3+ and a GaN tube core that emits blue light. This method prepares white light LEDs that lack the spectrum of the red light region, resulting in poor color rendering index and low luminous efficiency. Application of lamp holder. Recently, the emission wavelength of GaN chips (GaInN) is developing towards short-wave violet light (<420nm). wide, the color rendering index can be further increased, and the color temperature can be further decreased. It is very important to develop high-resolution and warm white LEDs excited by short-wave chips such as near-ultraviolet and ultraviolet light for LEDs to enter indoor lighting.

发明内容Contents of the invention

为了解决现有技术中存在的上述问题,本发明提供一种出光效率高,工艺简单,成本低廉的高显色指数暖白光LED发光装置。In order to solve the above-mentioned problems in the prior art, the present invention provides a high color rendering index warm white LED lighting device with high light extraction efficiency, simple process and low cost.

本发明提供的技术方案如下:一种暖白光LED发光装置,包括带有电极和热沉的基座,以及被所述基座包围在内并焊接于所述热沉顶面的LED芯片,所述LED芯片通过金线与所述电极电连接,The technical solution provided by the present invention is as follows: a warm white LED lighting device, including a base with electrodes and a heat sink, and an LED chip surrounded by the base and welded to the top surface of the heat sink, the The LED chip is electrically connected to the electrode through a gold wire,

还包括荧光转换罩,所述荧光转换罩设置在所述基座的上方并罩设住所述LED芯片,所述荧光转换罩由蓝绿红三基色荧光粉和树脂胶体混合固化而成;It also includes a fluorescent conversion cover, the fluorescent conversion cover is arranged above the base and covers the LED chip, and the fluorescent conversion cover is formed by mixing and curing blue, green and red three primary color phosphors and resin colloid;

所述蓝绿红三基色荧光粉的组成成分为:蓝色荧光粉:Ca5(PO4)3Cl:Eu2+和/或Sr5(PO4)3Cl:Eu2+;绿色荧光粉:(Ca,Sr)2SiO4:Eu2+和/或Ba2SiO4:Eu2+;红色荧光粉:CaAlSiN3:Eu2+和/或Y2O3:Eu3+和/或Y2O2S:Eu3The composition of the blue, green and red three primary color phosphors is: blue phosphor: Ca 5 (PO 4 ) 3 Cl:Eu 2+ and/or Sr 5 (PO 4 ) 3 Cl:Eu 2+ ; green phosphor :(Ca,Sr) 2 SiO 4 :Eu 2+ and/or Ba 2 SiO 4 :Eu 2+ ; red phosphor: CaAlSiN 3 :Eu 2+ and/or Y 2 O 3 :Eu 3+ and/or Y 2 O 2 S:Eu 3 ;

所述蓝绿红三基色荧光粉的混合质量比为:蓝色荧光粉:绿色荧光粉:红色荧光粉为(1.0~4):(0.5~3):(1~4);The mixing mass ratio of the blue, green and red three primary color phosphors is: blue phosphor: green phosphor: red phosphor (1.0-4): (0.5-3): (1-4);

所述LED芯片激发波长为220nm~420nm。The excitation wavelength of the LED chip is 220nm-420nm.

在本发明的较佳实施例中,所述蓝绿红三基色荧光粉的混合质量比为:蓝色荧光粉:绿色荧光粉:红色荧光粉为(1.0~3.8):(0.5~2.5):(1.2~3.5)。In a preferred embodiment of the present invention, the mixing mass ratio of the blue, green and red three primary color phosphors is: blue phosphor: green phosphor: red phosphor (1.0-3.8): (0.5-2.5): (1.2~3.5).

在本发明的较佳实施例中,所述蓝绿红三基色荧光粉的混合质量比为:蓝色荧光粉:绿色荧光粉:红色荧光粉为2:0.8:1.6。In a preferred embodiment of the present invention, the mixing mass ratio of the blue, green, and red three primary color phosphors is: blue phosphor: green phosphor: red phosphor is 2:0.8:1.6.

在本发明的较佳实施例中,所述蓝绿红三基色荧光粉与树脂胶体其混合比例为每ml树脂胶体配0.001~1g蓝绿红三基色荧光粉。In a preferred embodiment of the present invention, the mixing ratio of the blue, green, and red phosphor powder and the resin colloid is 0.001-1 g blue, green, and red phosphor powder per ml of resin gel.

在本发明的较佳实施例中,所述树脂胶体设置为抗紫外老化环氧树脂或硅胶树脂。In a preferred embodiment of the present invention, the resin colloid is set to be anti-ultraviolet aging epoxy resin or silicone resin.

在本发明的较佳实施例中,所述蓝色荧光粉可以设置为Sr5(PO4)3Cl:Eu2+In a preferred embodiment of the present invention, the blue phosphor can be set as Sr 5 (PO 4 ) 3 Cl:Eu 2+ .

在本发明的较佳实施例中,所述绿色荧光粉可以设置为(Ca,Sr)2SiO4:Eu2+In a preferred embodiment of the present invention, the green phosphor can be set as (Ca,Sr) 2 SiO 4 :Eu 2+ .

在本发明的较佳实施例中,所述红色荧光粉可以设置为CaAlSiN3:Eu2+In a preferred embodiment of the present invention, the red phosphor can be set as CaAlSiN 3 :Eu 2+ .

在本发明的较佳实施例中,所述蓝绿红三基色荧光粉均采用高温固相法合成。In a preferred embodiment of the present invention, the blue, green, and red trichromatic phosphors are all synthesized by a high-temperature solid-phase method.

一种暖白光LED发光装置的制备方法,包括以下步骤:A method for preparing a warm white LED lighting device, comprising the following steps:

1)将LED芯片固定在热沉上,并将LED芯片两端分别通过金线与基座底部的两个电极导通;1) Fix the LED chip on the heat sink, and connect the two ends of the LED chip to the two electrodes at the bottom of the base through gold wires;

2)用蓝绿红三基色荧光粉与树脂胶体按一定粉胶比混合均匀;2) Use blue, green and red three primary color phosphors and resin colloid to mix evenly according to a certain powder-to-glue ratio;

3)取出制备好的LED芯片,进行点胶封装;3) Take out the prepared LED chip, and carry out dispensing and encapsulation;

4)将点胶好的LED芯片放在空气中固化一段时间后,放入真空干燥箱烘干。4) Put the glued LED chips in the air to cure for a period of time, then put them into a vacuum drying oven to dry.

本发明的优点如下:该暖白光LED发光装置采用激发波长范围为220nm~420nm的LED芯片,这种LED芯片产生的光大部分用于激发荧光粉,因此出光的色纯度仅仅取决于荧光粉的色纯度,同时该暖白光LED发光装置又在LED芯片上方设置荧光转换罩,并在荧光转换罩上设置高色纯度的蓝绿红三基色荧光粉,使得LED芯片在激发蓝绿红三基色荧光粉后获得高显色指数的暖白光,由此获得的暖白光可实现色温(2500~6000K)及显色指数(80~96)可控,其显色指数在远超过其他蓝光芯片配合荧光粉所产生的显色指数85,因此该暖白光LED发光装置具有高显色指数且工艺简单、出光效率高的优点。The advantages of the present invention are as follows: the warm white LED lighting device adopts LED chips with an excitation wavelength range of 220nm to 420nm. At the same time, the warm white LED light-emitting device is provided with a fluorescent conversion cover above the LED chip, and a high-purity blue, green and red three-color phosphor is set on the fluorescent conversion cover, so that the LED chip can excite the blue, green and red three-primary color phosphor Finally, warm white light with high color rendering index can be obtained. The warm white light thus obtained can realize controllable color temperature (2500-6000K) and color rendering index (80-96). The resulting color rendering index is 85, so the warm white LED lighting device has the advantages of high color rendering index, simple process, and high light extraction efficiency.

附图说明Description of drawings

图1为本发明的暖白光LED发光装置的结构示意图;Fig. 1 is the structural representation of the warm white LED lighting device of the present invention;

图2为用395nm芯片制备的本发明的暖白光LED发光装置的光谱图(CCT为色温,Ra为显色指数);Fig. 2 is the spectrogram (CCT is the color temperature, and Ra is the color rendering index) of the warm white LED lighting device of the present invention prepared with a 395nm chip;

具体实施方式Detailed ways

参见图1,暖白光LED发光装置,包括带有两个电极40和热沉30的基座20,以及被基座20包围在内并焊接于热沉30顶面的LED芯片10,两个电极40分别在的基座20两端,用于引出LED芯片10的正负极,LED芯片10通过金线50与电极40电连接,荧光转换罩60设置在基座20的上方并罩设住LED芯片10,荧光转换罩60由蓝绿红三基色荧光粉和树脂胶体混合固化而成。Referring to FIG. 1, a warm white LED lighting device includes a base 20 with two electrodes 40 and a heat sink 30, and an LED chip 10 surrounded by the base 20 and soldered to the top surface of the heat sink 30. The two electrodes 40 respectively at both ends of the base 20, used to lead out the positive and negative poles of the LED chip 10, the LED chip 10 is electrically connected to the electrode 40 through the gold wire 50, the fluorescent conversion cover 60 is arranged above the base 20 and covers the LED The chip 10 and the fluorescent conversion cover 60 are formed by mixing and curing blue, green and red three primary color phosphors and resin colloid.

其中LED芯片10可以是紫外、近紫外或者紫光芯片,其激发波长范围涵盖为220nm~420nm。Wherein the LED chip 10 may be an ultraviolet, near ultraviolet or ultraviolet chip, and its excitation wavelength range covers 220nm-420nm.

蓝色荧光粉可以设置为Ca5(PO4)3Cl:Eu2+和/或Sr5(PO4)3Cl:Eu2+The blue phosphor can be set as Ca 5 (PO 4 ) 3 Cl:Eu 2+ and/or Sr 5 (PO 4 ) 3 Cl:Eu 2+ ;

绿色荧光粉可以设置为(Ca,Sr)2SiO4:Eu2+和/或Ba2SiO4:Eu2+The green phosphor can be set as (Ca,Sr) 2 SiO 4 :Eu 2+ and/or Ba 2 SiO 4 :Eu 2+ ;

红色荧光粉可以设置为CaAlSiN3:Eu2+和/或Y2O3:Eu3+和/或Y2O2S:Eu3The red phosphor can be set as CaAlSiN 3 :Eu 2+ and/or Y 2 O 3 :Eu 3+ and/or Y 2 O 2 S:Eu 3 .

本实施例中,蓝绿红三基色荧光粉蓝绿红分别采用Sr5(PO4)3Cl:Eu2+,(Ca,Sr)2SiO4:Eu2+,CaAlSiN3:Eu2+,并利用高温固相法合成。In this embodiment, blue, green and red three primary color phosphors are respectively Sr 5 (PO 4 ) 3 Cl:Eu 2+ , (Ca,Sr) 2 SiO 4 :Eu 2+ , CaAlSiN 3 :Eu 2+ , And synthesized by high-temperature solid-phase method.

首先,将LED芯片10固定在热沉30上,LED芯片10两端分别通过金线50与基座底部的两个电极40导通,而后开始制备荧光转换罩60,先将蓝绿红三种荧光粉按照重量比例为2:0.8:1.6用玛瑙坩埚进行充分研磨混合,取出0.13g混入1ml的环氧树脂混合均匀,取出制备好的LED芯片10,进行点胶封装。之后放在空气中固化5分钟后,放入真空干燥箱干燥抽真空50℃干燥5h既可。获得的暖白光LED的光谱图及图片如图2所示。该实例中采用395nm的芯片,在3.29V电压,300mA的电流驱动下,可以获得色温为3568K,显色指数为94.65,色坐标为(0.3952,0.3709)的高显指的暖白光LED。First, the LED chip 10 is fixed on the heat sink 30, and the two ends of the LED chip 10 are connected to the two electrodes 40 at the bottom of the base through the gold wire 50 respectively, and then the fluorescent conversion cover 60 is prepared, and the blue, green and red three kinds of The phosphor powder was fully ground and mixed with an agate crucible according to the weight ratio of 2:0.8:1.6, 0.13g was taken out and mixed with 1ml of epoxy resin and mixed evenly, and the prepared LED chip 10 was taken out for dispensing and encapsulation. Then put it in the air to solidify for 5 minutes, put it in a vacuum drying oven to dry and vacuumize at 50°C for 5 hours. The spectra and pictures of the obtained warm white LEDs are shown in Figure 2. In this example, a 395nm chip is used, driven by a voltage of 3.29V and a current of 300mA, a warm white LED with a color temperature of 3568K, a color rendering index of 94.65, and a color coordinate of (0.3952, 0.3709) can be obtained.

综上所述,该暖白光LED发光装置采用激发波长范围为220nm~420nm的LED芯片10,同时又在LED芯片10上方设置荧光转换罩60,并在荧光转换罩60上设置高色纯度的蓝绿红三基色荧光粉,使得LED芯片10在激发蓝绿红三基色荧光粉后获得高显色指数的暖白光,由此获得的暖白光可实现色温(2500~6000K)及显色指数(80~96)可控,其显色指数在远超过其他蓝光芯片配合荧光粉所产生的显色指数85,因此该暖白光LED发光装置具有高显色指数且工艺简单、出光效率高的优点。To sum up, the warm white LED light-emitting device adopts the LED chip 10 with an excitation wavelength range of 220nm-420nm, and at the same time, a fluorescent conversion cover 60 is arranged on the top of the LED chip 10, and a blue color with high color purity is arranged on the fluorescent conversion cover 60. The green and red three-primary-color phosphors enable the LED chip 10 to obtain warm white light with a high color rendering index after exciting the blue-green-red three-primary-color phosphors. ~96) is controllable, and its color rendering index far exceeds the color rendering index 85 produced by other blue light chips with phosphor powder. Therefore, the warm white LED lighting device has the advantages of high color rendering index, simple process, and high light extraction efficiency.

上述仅为本发明的一个具体实施例,但本发明的设计构思并不局限于此,凡利用此构思对本发明进行非实质性的改动,均应属于侵犯本发明保护范围的行为。The above is only a specific embodiment of the present invention, but the design concept of the present invention is not limited thereto, any insubstantial changes to the present invention by using this concept should be an act of violating the protection scope of the present invention.

Claims (8)

1. a kind of warm white LED light-emitting device, include with electrode and heat sink pedestal, and by the pedestal be enclosed in simultaneously It is welded in the LED chip of the heat sink top surface, the LED chip is electrically connected by gold thread with the electrode, it is characterised in that:
Further include fluorescence conversion cover, fluorescence conversion, which is provide with, to be set in the top of the pedestal and be provide with residence and state LED chip, institute Fluorescence conversion cover is stated by bluish-green red three primary colors fluorescent powder and resin colloid is mixing cured forms;
The constituent of the bluish-green red three primary colors fluorescent powder is:Blue colour fluorescent powder:Ca5(PO4)3Cl:Eu2+And/or Sr5(PO4)3Cl:Eu2+;Green emitting phosphor:(Ca,Sr)2SiO4:Eu2+And/or Ba2SiO4:Eu2+;Red fluorescence powder:CaAlSiN3:Eu2+With/ Or Y2O3:Eu3+And/or Y2O2S:Eu3+
The mixing quality ratio of the bluish-green red three primary colors fluorescent powder is:Blue colour fluorescent powder:Green emitting phosphor:Red fluorescence powder is (1.0~4):(0.5~3):(1~4);
The LED chip excitation wavelength is 220nm~420nm.
2. warm white LED light-emitting device according to claim 1, it is characterised in that:The bluish-green red three primary colors fluorescent powder Mixing quality ratio be:Blue colour fluorescent powder:Green emitting phosphor:Red fluorescence powder is (1.0~3.8):(0.5~2.5):(1.2~ 3.5)。
3. warm white LED light-emitting device according to claim 2, it is characterised in that:The bluish-green red three primary colors fluorescent powder Mixing quality ratio be:Blue colour fluorescent powder:Green emitting phosphor:Red fluorescence powder is 2:0.8:1.6.
4. a kind of warm white LED light-emitting device according to claim 1, it is characterised in that:The bluish-green red three primary colours are glimmering Its mixed proportion is to match the bluish-green red three primary colors fluorescent powders of 0.001~1g per ml resin colloids to light powder with resin colloid.
5. a kind of warm white LED light-emitting device according to claim 1, it is characterised in that:The blue colour fluorescent powder setting For (Sr, Ca)5(PO4)3Cl:Eu2+
6. a kind of warm white LED light-emitting device according to claim 1, it is characterised in that:The green emitting phosphor setting For (Ca, Sr)2SiO4:Eu2+
7. a kind of warm white LED light-emitting device according to claim 1, it is characterised in that:The red fluorescence powder setting For CaAlSiN3:Eu2+
8. a kind of preparation method of warm white LED light-emitting device according to claim 1, feature include the following steps:
1) LED chip is fixed on heat sink, and LED chip both ends is led by two electrodes of gold thread and base bottom respectively It is logical;
2) it is uniformly mixed by certain Ratio of filler bitumen with resin colloid with bluish-green red three primary colors fluorescent powder;
3) LED chip prepared is taken out, glue dispensing and packaging is carried out;
4) after the good LED chip of dispensing being placed on air set for a period of time, it is put into vacuum drying chamber drying.
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