CN105088192B - Multi-pipeline liquid gasification reacts film-forming apparatus flow controlling method of air - Google Patents
Multi-pipeline liquid gasification reacts film-forming apparatus flow controlling method of air Download PDFInfo
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- CN105088192B CN105088192B CN201510494546.1A CN201510494546A CN105088192B CN 105088192 B CN105088192 B CN 105088192B CN 201510494546 A CN201510494546 A CN 201510494546A CN 105088192 B CN105088192 B CN 105088192B
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- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000007788 liquid Substances 0.000 title claims abstract description 28
- 238000002309 gasification Methods 0.000 title claims abstract description 27
- 238000006243 chemical reaction Methods 0.000 claims abstract description 89
- 239000012159 carrier gas Substances 0.000 claims abstract description 41
- 239000012495 reaction gas Substances 0.000 claims abstract description 36
- 239000007789 gas Substances 0.000 claims abstract description 29
- 239000012535 impurity Substances 0.000 claims abstract description 20
- 238000005086 pumping Methods 0.000 claims abstract description 5
- 238000000746 purification Methods 0.000 claims description 23
- 230000001276 controlling effect Effects 0.000 claims description 11
- 230000001105 regulatory effect Effects 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000002245 particle Substances 0.000 abstract description 7
- 230000008569 process Effects 0.000 abstract description 4
- 238000005457 optimization Methods 0.000 abstract description 2
- 238000006467 substitution reaction Methods 0.000 abstract 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000001914 filtration Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
Abstract
The invention discloses a kind of multi-pipeline liquid gasification to react film-forming apparatus flow controlling method of air, multi-pipeline liquid gasification reaction film-forming apparatus includes a plurality of air inlet pipeline, aspiration pump and reaction chamber, a plurality of air inlet pipeline is passed through reaction chamber jointly, the aspiration pump is connected with reaction chamber and positioned at the tributary valve of air inlet pipeline, carrier gas and reaction gas are passed through in air inlet pipeline, entrapped air volume, impurity is evacuated pumping by tributary valve and walks；Then, regulation tributary valve makes carrier gas and reaction gas enter reaction chamber and be chemically reacted, and after the completion of reaction, the remainder of exhaust gas in the reaction chamber is taken away by aspiration pump.The present invention flows through the carrier gas of air inlet pipeline and the flow direction of reaction gas before starting by optimization chemical reaction, the method for directly making gas flow into reaction chamber in substitution conventional process formula, reduce because the residual gas and impurity that are trapped in after last processing procedure in air inlet pipeline are directly entered reaction chamber, effectively improve the performance of the particle after film forming.
Description
Technical field
The present invention relates to IC manufacturing field, more particularly to a kind of multi-pipeline liquid gasification reaction film-forming apparatus air-flow
Control method.
Background technology
In semiconductor integrated circuit manufacturing process, the processing procedure that film forming is reacted with liquid gasification is becoming widely adopted, and
TEOS (tetraethyl silica) deposit silica with more preferable step coverage because be used in 65nm and following line
In wide technique.
At present, industry is mainly using the multi-pipeline liquid gasification reaction film-forming apparatus of Applied Materials.This equipment can
SiO of different nature is prepared by providing the TEOS of different flow2.When equipment has the TEOS pipelines of more than two-way and two-way
When, wherein the pipelines of TEOS all the way used have gas after liquid gasification is passed to other TEOS pipelines being not used by
In, the gas that this part is trapped in other pipelines can be stayed in pipeline always, can be into when using this pipeline all the way itself
For sources of particles, it is brought to reaction cavity and influences the particle performance of film.
The content of the invention
The present invention provides a kind of multi-pipeline liquid gasification reaction film-forming apparatus flow controlling method of air, and liquid gas is used to improve
Change the particle performance of reaction thin film-forming method processing procedure.
In order to solve the above technical problems, the present invention provides a kind of multi-pipeline liquid gasification reaction film-forming apparatus gas flow optimized side
Method, multi-pipeline liquid gasification reaction film-forming apparatus include a plurality of air inlet pipeline, aspiration pump and reaction chamber, a plurality of air inlet pipeline
Reaction chamber is passed through jointly, and the aspiration pump is connected with reaction chamber and positioned at the tributary valve of air inlet pipeline, in air inlet pipeline
In be passed through carrier gas and reaction gas, entrapped air volume, impurity is evacuated pumping by tributary valve and walk；Then, regulation tributary valve makes load
Gas and reaction gas enter reaction chamber and chemically reacted, and after the completion of reaction, are taken away by aspiration pump in the reaction chamber
Remainder of exhaust gas.
Preferably, the air inlet pipeline includes gas-carrier pipeline and reaction air pipe, the gas-carrier pipeline and reaction air pipe
Partially overlap, the tributary valve is arranged on the pipeline of coincidence.
Preferably, high temperature purification device and regulating valve are additionally provided with the pipeline of the coincidence, the high temperature purification device and regulation
Valve is arranged at the inlet end of tributary valve.
Preferably, filter and gas flow controller are additionally provided with the gas-carrier pipeline, the reaction air pipe
In be additionally provided with flowmeter.
Preferably, described be passed through carrier gas and reaction gas in air inlet pipeline, entrapped air volume, impurity is set to pass through tributary valve quilt
The step of aspiration pump siphons away includes：First, open and aspiration pump and adjust tributary valve, then, open filter in gas-carrier pipeline,
Gas flow controller and high temperature purification device, are passed through carrier gas, make carrier gas net by filter, gas flow control valve and high temperature
Entered after changing device in the valve of tributary；Then, then the flowmeter reacted on air pipe is opened, makes reaction gas net in high temperature through flowmeter
Change and mixed in device with carrier gas, adjusted valve is entered in the valve of tributary, until aspiration pump inhales the entrapped air volume in the valve of tributary, impurity
Walk.
Preferably, the purification temperature in the high temperature purification device is 160 DEG C.
Preferably, the tributary valve and reaction chamber are respectively positioned in heating mantle region, in the reaction chamber carrier gas and
The chemical reaction temperature of reaction gas is 110 DEG C.
Preferably, the time that carrier gas and reaction gas are passed through in air inlet pipeline is 5-10s, then adjusts tributary valve and make carrier gas
Reaction chamber is entered with reaction gas to be chemically reacted.
Compared with prior art, multi-pipeline liquid gasification of the invention reaction film-forming apparatus flow controlling method of air, the multitube
Road liquid gasification reaction film-forming apparatus includes a plurality of air inlet pipeline, aspiration pump and reaction chamber, and a plurality of air inlet pipeline is passed through jointly
Reaction chamber, the aspiration pump are connected with reaction chamber and positioned at the tributary valve of air inlet pipeline, and load is passed through in air inlet pipeline
Gas and reaction gas, entrapped air volume, impurity is evacuated pumping by tributary valve and walk；Then, regulation tributary valve makes carrier gas and reaction
Gas enters reaction chamber and chemically reacted, and after the completion of reaction, the remainder of exhaust gas in the reaction chamber is taken away by aspiration pump.
The present invention flows through the carrier gas of air inlet pipeline and the flow direction of reaction gas before starting by optimization chemical reaction, it is first flowed to tributary
Valve, and taken away entrapped air volume and impurity using aspiration pump, it instead of in conventional process formula and directly flow carrier gas and reaction gas
Enter the method for reaction chamber, reduce because the residual gas and impurity that are trapped in after last processing procedure in air inlet pipeline directly enter
Enter reaction chamber, effectively improve the performance of the particle after film forming.
Brief description of the drawings
Fig. 1 is the structural representation that multi-pipeline liquid gasification reacts film-forming apparatus in embodiment of the invention；
Fig. 2 is the stream that multi-pipeline liquid gasification reacts film-forming apparatus flow controlling method of air in embodiment of the invention
Cheng Tu.
Shown in figure：100- air inlet pipelines, 110- tributaries valve, 120- regulating valves, 130- high temperature purifications device, 140- filterings
Device, 150- gas flow controllers, 160- flowmeters, 200- reaction chambers, 300- aspiration pumps.
Embodiment
In order to facilitate the understanding of the purposes, features and advantages of the present invention, below in conjunction with the accompanying drawings to the present invention
Embodiment be described in detail.It should be noted that accompanying drawing of the present invention uses using simplified form and non-essence
Accurate ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
As depicted in figs. 1 and 2, the present invention provides a kind of multi-pipeline liquid gasification reaction film-forming apparatus flow controlling method of air,
It is intended that improve the flow direction of gas in multi-pipeline liquid gasification reaction film-forming apparatus so that the last time be made after it is stagnant
The residual gas and impurity stayed in pipeline is disposed of, and avoids entrapped air volume and impurity from entering in reaction chamber, to liquid
Particle performance in gasification reaction thin film-forming method processing procedure impacts.
First, emphasis reference picture 1 is asked, multi-pipeline liquid gasification reaction film-forming apparatus includes a plurality of air inlet pipeline 100, taken out
Air pump 300 and reaction chamber 200, a plurality of air inlet pipeline 100 are passed through reaction chamber 200 jointly, the aspiration pump 300 with it is anti-
Answer chamber 200 and the tributary valve 110 on air inlet pipeline 100 to connect, specifically, the tributary valve 110 be arranged on it is described enter
Air pipe 100 is close to one end of reaction chamber 200.
Preferably, the air inlet pipeline 100 includes gas-carrier pipeline and reaction air pipe, and the gas-carrier pipeline and reaction
Air pipe is partially overlapped, and the tributary valve 110 is arranged on the pipeline of coincidence.High temperature purification is additionally provided with the pipeline of the coincidence
Device 130 and regulating valve 120, the high temperature purification device 130 and regulating valve 120 are arranged at the inlet end of tributary valve 110.Non-coincidence portion
Filter 140 and gas flow controller 150 are additionally provided with the gas-carrier pipeline divided, stream is additionally provided with the reaction air pipe
Gauge 160.In other words, carrier gas and reaction gas carry out Flow-rate adjustment after after the mixing purification of high temperature purification device 130 respectively, then
Pipeline through coincidence is passed into reaction chamber 200 jointly, and the purification temperature in the high temperature purification device 130 is 160 DEG C, can be with
Effectively remove steam, impurity.
Incorporated by reference to Fig. 2, multi-pipeline liquid gasification of the invention reaction film-forming apparatus flow controlling method of air comprises the following steps.
First, carrier gas and reaction gas are passed through in air inlet pipeline 100, the entrapped air volume in air inlet pipeline 100, impurity is converged
Collect at tributary valve 110, be then evacuated pump 300 and siphon away.
Above-mentioned steps specifically include：Open aspiration pump 300 and adjust tributary valve 110；Open the filter in gas-carrier pipeline
140th, gas flow controller 150 and high temperature purification device 130, are passed through carrier gas, make carrier gas by filter 140, gas flow
After controller 150 and high temperature purification device 130, then regulating valve 120 is opened, reach the adjusted valve 120 of the carrier gas after purification described
In tributary valve 110, now carrier gas will not be entered in reaction chamber 200.The flowmeter 160 on reaction air pipe is opened again, is made
Reaction gas is purified in high temperature purification device 130 through flowmeter 160 and mixed with carrier gas, and adjusted valve 120 enters tributary valve 110
In, until aspiration pump 300 siphons away the entrapped air volume in tributary valve 110, impurity.
Then, after entrapped air volume, impurity, which are evacuated pump 300, to be taken away, regulation tributary valve 110 enters carrier gas and reaction gas
Enter to reaction chamber 200 and chemically reacted, generate film, after the completion of reaction, the reaction chamber is taken away by aspiration pump 300
Remainder of exhaust gas in 200.
Preferably, the tributary valve 110 and reaction chamber 200 are respectively positioned in heating mantle region, the reaction chamber 200
The chemical reaction temperature of interior carrier gas and reaction gas is 110 DEG C.
Preferably, the time that carrier gas and reaction gas are passed through in air inlet pipeline 100 is 5-10s, then adjust tributary valve 110
Carrier gas and reaction gas is set to enter reaction chamber 200 and be chemically reacted, this time, which is set, both may insure entrapped air volume and miscellaneous
Matter is evacuated pump 300 and extracted totally, while and can enough avoids excessive gas from wasting.
Preferably, the flow of the carrier gas is consistent with carrier gas flux during chemical reaction, the flow of the reaction gas and change
Reaction gas flow speed is consistent when learning reaction.In other words, without specially adjusting the flow of carrier gas and reaction gas, process is simple.
In summary, multi-pipeline liquid gasification of the invention reaction film-forming apparatus flow controlling method of air, the multi-pipeline liquid
Gasification reaction film-forming apparatus includes a plurality of air inlet pipeline 100, aspiration pump 300 and reaction chamber 200, and a plurality of air inlet pipeline 100 is common
With reaction chamber 200 is passed through, the aspiration pump 300 connects with reaction chamber 200 and positioned at the tributary valve 110 of air inlet pipeline 100
Connect, carrier gas and reaction gas are passed through in air inlet pipeline 100, entrapped air volume, impurity is evacuated pumping by tributary valve 110 and walk；
Then, regulation tributary valve 110 makes carrier gas and reaction gas enter reaction chamber 200 and be chemically reacted, after the completion of reaction, by taking out
Air pump 300 takes the remainder of exhaust gas in the reaction chamber 200 away.The present invention flows through air inlet pipe before starting by optimizing chemical reaction
The carrier gas on road 100 and the flow direction of reaction gas, it is first flowed to tributary valve 110, and utilize aspiration pump 300 by entrapped air volume and impurity
Take away, instead of the method that carrier gas and reaction gas are flowed directly into reaction chamber 200 in conventional process formula, reduce because of upper one
The residual gas and impurity being trapped in after secondary processing procedure in air inlet pipeline 100 are directly entered reaction chamber 200, effectively improve into
Particle performance after film.
Obviously, those skilled in the art can carry out the spirit of various changes and modification without departing from the present invention to invention
And scope.So, if these modifications and variations of the present invention belong to the claims in the present invention and its equivalent technologies scope it
Interior, then the present invention is also intended to including these changes and modification.
Claims (4)
1. a kind of multi-pipeline liquid gasification reacts film-forming apparatus flow controlling method of air, multi-pipeline liquid gasification reaction film-forming apparatus
Including a plurality of air inlet pipeline, aspiration pump and reaction chamber, a plurality of air inlet pipeline is passed through reaction chamber jointly, the aspiration pump with it is anti-
Answer chamber and the tributary valve connection positioned at air inlet pipeline, it is characterised in that carrier gas and reaction gas are passed through in air inlet pipeline, is made
Entrapped air volume, impurity are evacuated pumping by tributary valve and walked；Then, regulation tributary valve makes carrier gas and reaction gas enter reaction chamber
Room is chemically reacted, and after the completion of reaction, the remainder of exhaust gas in the reaction chamber is taken away by aspiration pump；The air inlet pipeline bag
Gas-carrier pipeline and reaction air pipe are included, the gas-carrier pipeline and reaction gas pipeline portions overlap, and the tributary valve is arranged on coincidence
On pipeline, high temperature purification device and regulating valve are additionally provided with the pipeline of the coincidence, the high temperature purification device and regulating valve are arranged at
The inlet end of tributary valve, is additionally provided with filter and gas flow controller in the gas-carrier pipeline, in the reaction air pipe
It is additionally provided with flowmeter；It is described that carrier gas and reaction gas are passed through in air inlet pipeline, entrapped air volume, impurity is taken out by tributary valve
The step of air pump siphons away includes：First, open aspiration pump and adjust tributary valve, then, open filter, gas in gas-carrier pipeline
Body flow controller and high temperature purification device, are passed through carrier gas, carrier gas is passed through filter, gas flow control valve and high temperature purification
Entered after device in the valve of tributary；Then, then the flowmeter reacted on air pipe is opened, makes reaction gas through flowmeter in high temperature purification
Mixed in device with carrier gas, adjusted valve is entered in the valve of tributary, until aspiration pump inhales the entrapped air volume in the valve of tributary, impurity
Walk.
2. multi-pipeline liquid gasification as claimed in claim 1 reacts film-forming apparatus flow controlling method of air, it is characterised in that described
Purification temperature in high temperature purification device is 160 DEG C.
3. multi-pipeline liquid gasification as claimed in claim 1 reacts film-forming apparatus flow controlling method of air, it is characterised in that described
Tributary valve and reaction chamber are respectively positioned in heating mantle region, and the chemical reaction temperature of carrier gas and reaction gas is in the reaction chamber
110℃。
4. multi-pipeline liquid gasification as claimed in claim 1 reacts film-forming apparatus flow controlling method of air, it is characterised in that is entering
The time that carrier gas and reaction gas are passed through in air pipe is 5-10s, then adjusting tributary valve makes carrier gas and reaction gas enter reaction chamber
Room is chemically reacted.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510494546.1A CN105088192B (en) | 2015-08-12 | 2015-08-12 | Multi-pipeline liquid gasification reacts film-forming apparatus flow controlling method of air |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510494546.1A CN105088192B (en) | 2015-08-12 | 2015-08-12 | Multi-pipeline liquid gasification reacts film-forming apparatus flow controlling method of air |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105088192A CN105088192A (en) | 2015-11-25 |
| CN105088192B true CN105088192B (en) | 2018-01-26 |
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| CN107574423A (en) * | 2017-09-11 | 2018-01-12 | 德淮半导体有限公司 | Crystallizable device for atomizing liquid and method |
| CN110943003B (en) * | 2018-09-21 | 2023-08-18 | 北京北方华创微电子装备有限公司 | Process gas purging method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6231672B1 (en) * | 1998-05-18 | 2001-05-15 | Ips Ltd. | Apparatus for depositing thin films on semiconductor wafer by continuous gas injection |
| US6363626B1 (en) * | 1999-04-01 | 2002-04-02 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method and device for treating items stored in containers and storage apparatus equipped with such a device |
| US20040237893A1 (en) * | 2003-05-29 | 2004-12-02 | Park In-Sung | Layer deposition methods |
| CN1825537A (en) * | 2005-01-19 | 2006-08-30 | 三星电子株式会社 | Apparatus, control method, and manufacturing method for manufacturing semiconductor device |
| US20110108128A1 (en) * | 2008-07-04 | 2011-05-12 | Katsushi Kishimoto | Vacuum treatment apparatus and gas supply method |
| CN104160481A (en) * | 2012-03-09 | 2014-11-19 | 诺发系统公司 | Split pumping method, apparatus, and system |
-
2015
- 2015-08-12 CN CN201510494546.1A patent/CN105088192B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6231672B1 (en) * | 1998-05-18 | 2001-05-15 | Ips Ltd. | Apparatus for depositing thin films on semiconductor wafer by continuous gas injection |
| US6363626B1 (en) * | 1999-04-01 | 2002-04-02 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method and device for treating items stored in containers and storage apparatus equipped with such a device |
| US20040237893A1 (en) * | 2003-05-29 | 2004-12-02 | Park In-Sung | Layer deposition methods |
| CN1825537A (en) * | 2005-01-19 | 2006-08-30 | 三星电子株式会社 | Apparatus, control method, and manufacturing method for manufacturing semiconductor device |
| US20110108128A1 (en) * | 2008-07-04 | 2011-05-12 | Katsushi Kishimoto | Vacuum treatment apparatus and gas supply method |
| CN104160481A (en) * | 2012-03-09 | 2014-11-19 | 诺发系统公司 | Split pumping method, apparatus, and system |
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| CN105088192A (en) | 2015-11-25 |
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