CN105097640B - A kind of isolation insulating film of flash memory and preparation method thereof - Google Patents
A kind of isolation insulating film of flash memory and preparation method thereof Download PDFInfo
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- CN105097640B CN105097640B CN201410161669.9A CN201410161669A CN105097640B CN 105097640 B CN105097640 B CN 105097640B CN 201410161669 A CN201410161669 A CN 201410161669A CN 105097640 B CN105097640 B CN 105097640B
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- 238000002955 isolation Methods 0.000 title claims abstract description 115
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 150000004767 nitrides Chemical class 0.000 claims abstract description 20
- 238000004528 spin coating Methods 0.000 claims abstract description 16
- 238000010276 construction Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000007667 floating Methods 0.000 claims abstract description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 6
- 229920005591 polysilicon Polymers 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 44
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 238000013036 cure process Methods 0.000 claims description 6
- 229920001709 polysilazane Polymers 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- 239000000908 ammonium hydroxide Substances 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 238000003475 lamination Methods 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 241000209094 Oryza Species 0.000 claims 2
- 235000007164 Oryza sativa Nutrition 0.000 claims 2
- 235000009566 rice Nutrition 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000011259 mixed solution Substances 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000011049 filling Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 210000003323 beak Anatomy 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010025 steaming Methods 0.000 description 2
- GQWNECFJGBQMBO-UHFFFAOYSA-N Molindone hydrochloride Chemical compound Cl.O=C1C=2C(CC)=C(C)NC=2CCC1CN1CCOCC1 GQWNECFJGBQMBO-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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Abstract
The invention discloses a kind of isolation insulating film of flash memory and preparation method thereof, the preparation method of the isolation insulating film of the flash memory includes：Form the laminated construction being made up of successively substrate, gate oxide level, floating gate polysilicon layer and mask nitride layer；Shallow trench isolation regions are formed in the laminated construction；Liner oxide layer is formed on the inwall of the shallow trench isolation regions；Isolation insulating film is formed in the liner oxide layer and the mask nitride layer by spin coating mode；The first wet-treating and the second wet-treating are carried out to the isolation insulating film successively.The present invention can improve the yield and reliability of flash memory.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of isolation insulating film of flash memory and its making side
Method.
Background technology
Flash memory is a kind of form of Electrical Erasable programmable read only memory.With non-(NAND) type flash memory
In reservoir, but with the diminution of device size, the flash memory isolation insulating film prepared using conventional method is often produced
" cavity ", the problem of causing yield and reliability.Meanwhile the diminution of device size also correspondingly increases the height width of shallow channel
Than making the filling of isolation insulating film become more and more difficult.
Industry is more using high-density plasma filling (High Density Plasma, HDP) technology at present, to realize
The filling of isolated area.With the diminution of device size, HDP fillings can produce cavity.To improve filling perforation performance, some companies use
HDP+HARP (High Aspect Ratio Process, high-aspect-ratio fill process) mode.
But the HDP+HARP of prior art mode, the plasma of HDP technique middle-high densities can be to flash memory
Gate oxide level produces damage, and HARP techniques will pass through high annealing after film forming, can make the grid of flash memory
Oxide skin(coating) forms the phenomenon of similar " beak ", and the reliability in turn resulting in flash memory is bad.
The content of the invention
It is an object of the invention to propose a kind of isolation insulating film of flash memory and preparation method thereof, to improve quick flashing
The yield and reliability of memory.
In a first aspect, the invention provides a kind of preparation method of the isolation insulating film of flash memory, methods described bag
Include：
Form the lamination knot being made up of successively substrate, gate oxide level, floating gate polysilicon layer and mask nitride layer
Structure；
Shallow trench isolation regions are formed in the laminated construction；
Liner oxide layer is formed on the inwall of the shallow trench isolation regions；
Isolation insulating film is formed in the liner oxide layer and the mask nitride layer by spin coating mode；
The first wet-treating and the second wet-treating are carried out to the isolation insulating film successively.
Optionally, shallow trench isolation regions are formed in the laminated construction using autoregistration shallow trench isolation technique.
Optionally, the process that liner oxide layer is formed on the inwall of the shallow trench isolation regions includes：
High temperature oxidation process, on-site steam generation technique or atom layer deposition process.
Optionally, the thickness of the liner oxide layer is 3 to 10 nanometers.
Optionally, formed on the inwall of the shallow trench isolation regions after liner oxide layer, passing through spin coating mode
Formed in the liner oxide layer and the mask nitride layer before isolation insulating film, in addition to：
Temperature range be 700 to 900 degrees Celsius, processing time scope is 10 to 60 minutes and atmosphere is N2Or
Person N2Under conditions of Ar mixed gas, n 2 annealing processing is carried out to the liner oxide layer.
Optionally, it is described formed by spin coating mode in the liner oxide layer and the mask nitride layer every
Material from dielectric film includes：Polysilazane.
Optionally, the thickness of the isolation insulating film is 400 to 500 nanometers.
Optionally, it is described formed by spin coating mode in the liner oxide layer and the mask nitride layer every
After dielectric film, in addition to：
Under conditions of temperature range is 250 to 300 degrees Celsius, processing time is 20 to 60 minutes, using the steaming of silicon chip
Vapour handling process carries out cure process to the isolation insulating film.
Optionally, it is described to be to the number of the isolation insulating film the first wet-treating of progress and the second wet-treating successively
2 to 5 times.
Optionally, the process conditions of first wet-treating include：Temperature range is 50 to 80 degrees Celsius, processing time
It is warm water for 10 to 60 minutes and liquid environment.
Optionally, second wet-treating includes：Mixed liquor and ammonium hydroxide in sulfuric acid and hydrogen peroxide, double successively
In the liquid environment of the mixed liquor of oxygen water and water, wet-treating is carried out to the isolation insulating film.
Optionally, it is described the first wet-treating and the second wet-treating are carried out to the isolation insulating film successively after, also
Including：
Temperature range be 450 to 600 degrees Celsius, processing time be within 30 minutes under conditions of, using the steaming of silicon chip
Vapour handling process carries out cure process to the isolation insulating film.
Second aspect, present invention also offers a kind of isolation insulating film of flash memory, the isolation insulating film uses
The preparation method of the isolation insulating film for the flash memory that first aspect present invention provides is made.
Isolation insulating film of a kind of flash memory provided by the invention and preparation method thereof, by using autoregistration shallow ridges
Road isolation technology forms shallow trench isolation regions, will not produce damage to the gate oxide level of flash memory, will not make quick flashing
The gate oxide level of memory forms the phenomenon of similar " beak "；Isolation insulating film is formed by spin coating mode, can be reduced
Cavity in isolation insulating film, realize and filled without cavity, similar yield and reliability excessively caused by high stress will not be brought again
Problem；By carrying out the first wet-treating and the second wet-treating to isolation insulating film successively, can remove in isolation insulating film
Impurity, making to put isolation insulating film has good filling capacity, improves the performance of isolation insulating film, and then improve quick flashing
The yield and reliability of memory.
Brief description of the drawings
Fig. 1 is the implementation process figure of the preparation method of the isolation insulating film of flash memory provided in an embodiment of the present invention；
Fig. 2 a- Fig. 2 d are tied corresponding to the preparation method of the isolation insulating film of flash memory provided in an embodiment of the present invention
Composition；
Fig. 3 a- Fig. 3 b are to produce gas in the preparation method of the isolation insulating film of flash memory provided in an embodiment of the present invention
The schematic diagram of bubble and release bubble process.
The technical characteristic that reference in figure refers to respectively is：
201st, substrate；202nd, gate oxide level；203rd, floating gate polysilicon layer；204th, mask nitride layer；205th, shallow ridges
Road isolated area；206th, liner oxide layer；207th, isolation insulating film；301st, bubble.
Embodiment
For make present invention solves the technical problem that, the technical scheme that uses and the technique effect that reaches it is clearer, below
The present invention is described in further detail in conjunction with the accompanying drawings and embodiments.It is understood that specific implementation described herein
Example is used only for explaining the present invention, rather than limitation of the invention.It also should be noted that for the ease of description, accompanying drawing
In illustrate only part related to the present invention rather than full content.
Fig. 1 is the implementation process figure of the preparation method of the isolation insulating film of flash memory provided in an embodiment of the present invention.
As shown in figure 1, method provided in an embodiment of the present invention includes：
Step 101, formed and be made up of successively substrate, gate oxide level, floating gate polysilicon layer and mask nitride layer
Laminated construction.
Fig. 2 a are that the preparation method of the isolation insulating film of flash memory provided in an embodiment of the present invention is right in this step
The structure chart answered.Reference picture 2a, formed successively by substrate 201, gate oxide level 202, floating gate polysilicon layer 203 and mask
The laminated construction that nitride layer 204 forms.
Step 102, shallow trench isolation regions are formed in the laminated construction.
Fig. 2 b are that the preparation method of the isolation insulating film of flash memory provided in an embodiment of the present invention is right in this step
The structure chart answered.Reference picture 2b, shallow trench isolation regions 205 are formed in the laminated construction.
Shallow trench isolation regions 205 are formed in the laminated construction, can specifically be included：The laminated construction is carved
Erosion, the part laminated construction etched away form shallow trench isolation regions 205, and the laminated construction not being etched away is formed in part with source
Area.Is played a part of to adjacent active area by isolation for the shallow trench isolation regions 205 formed.
Specifically, autoregistration shallow trench isolation technique (Self-Aligned Shallow Trench can be used
Isolation, SA-STI) shallow trench isolation regions 205 are formed in the laminated construction.
Step 103, liner oxide layer is formed on the inwall of the shallow trench isolation regions.
Fig. 2 c are that the preparation method of the isolation insulating film of flash memory provided in an embodiment of the present invention is right in this step
The structure chart answered.Reference picture 2c, liner oxide layer 206 is formed on the inwall of the shallow trench isolation regions 205.
Specifically, the process that liner oxide layer 206 is formed on the inwall of the shallow trench isolation regions 205
It can include：High temperature oxidation process (High Temperature Oxidation, HTO), on-site steam generation technique (In-
Situ Steam Generation, ISSG) or atom layer deposition process (Atomic Layer Deposition, ALD).
Preferably, the thickness of the liner oxide layer 206 is 3 to 10 nanometers.
Preferably, formed after liner oxide layer 206, can also wrapped on the inwall of the shallow trench isolation regions 205
Include：Temperature range be 700 to 900 degrees Celsius, processing time scope is 10 to 60 minutes and atmosphere is N2Or N2With
Under conditions of Ar mixed gas, n 2 annealing processing is carried out to the liner oxide layer 206.N 2 annealing processing can make lining
Bottom oxide skin(coating) 206 is finer and close, and then makes the insulating properties of liner oxide layer 206 more preferably.
Wherein, liner oxide layer 206 can alleviate caused isolation insulating film in flash memory subsequent fabrication process
207 to caused by flash memory stress, meanwhile, liner oxide layer 206 can play a part of stop, to prevent from subsequently making
Impurity during work in caused isolation insulating film is penetrated into the active area of flash memory.
Step 104, isolation is formed in the liner oxide layer and the mask nitride layer by spin coating mode
Dielectric film.
Fig. 2 d are that the preparation method of the isolation insulating film of flash memory provided in an embodiment of the present invention is right in this step
The structure chart answered.Reference picture 2d, by spin coating mode in the liner oxide layer 206 and the mask nitride layer 204
Upper formation isolation insulating film 207.
Wherein, the thickness of the isolation insulating film 207 is 400 to 500 nanometers.It is described by spin coating mode in the substrate
The material of isolation insulating film 207 is formed on oxide skin(coating) and the mask nitride layer to be included：Polysilazane
(Polysilazane, PSZ).
Specifically, using polysilazane as the raw material for forming the isolation insulating film, due to the usual bar of polysilazane
It is liquid condition under part, using spin coating mode, in the liner oxide layer 206 and the overlying of mask nitride layer 204
The strata silazane of lid one, to be filled to the shallow trench isolation regions after formation liner oxide layer 206.It is further, since poly-
Contain the impurity such as nitrogen, carbon inside silazane, can also contain the impurity such as nitrogen, carbon in the isolation insulating film of formation.
Optionally, it is described by spin coating mode in the liner oxide layer 206 and the mask nitride layer 204
Formed after isolation insulating film 207, can also included：Temperature range be 250 to 300 degrees Celsius, processing time be 20 to 60
Under conditions of minute, using the steam treatment technique (Water Vapor Generator, WVG) of silicon chip to the isolated insulation
Film 207 carries out cure process.
Step 105, the first wet-treating and the second wet-treating are carried out to the isolation insulating film successively.
Wherein, the process conditions of first wet-treating can include：Temperature range is 50 to 80 degrees Celsius, during processing
Between be 10 to 60 minutes and liquid environment is warm water.For example, in the condition that temperature is 60 degrees Celsius, processing time is half an hour
Under, warm water processing is carried out to the isolation insulating film 207.Fig. 3 a are that the isolation of flash memory provided in an embodiment of the present invention is exhausted
The preparation method of velum produces the schematic diagram of bubble process in this step.Reference picture 3a, passing through first wet-treating
Afterwards, the nitrogen-atoms in isolation insulating film 207 can be substituted by oxygen atom, and then be changed into silica, reach removal isolated insulation
The purpose of impurity in film, and nitrogen, carbon that part is not removed can form NH3Or CO2Molecule, isolation is remained in as bubble 301
The inside of dielectric film 207.
Second wet-treating can include：Successively the mixed liquor of sulfuric acid and hydrogen peroxide (SPM) and ammonium hydroxide,
In the liquid environment of the mixed liquor of hydrogen peroxide and water (SC1), wet-treating is carried out to the isolation insulating film 207.Fig. 3 b are these
The preparation method of the isolation insulating film for the flash memory that inventive embodiments provide discharges the signal of bubble process in this step
Figure.Reference picture 3b, after by second wet-treating, the bubble 301 remained in isolation insulating film 207 can be released
Put, so as to reduce the impurity in isolation insulating film 207.
Optionally, time for carrying out the first wet-treating and the second wet-treating to the isolation insulating film 207 successively
Number is 2 to 5 times.Repeatedly the isolation insulating film 207 is carried out successively the first wet-treating and the second wet-treating can make every
Performance from dielectric film 207 is more excellent.
It is described the first wet-treating and the second wet-treating are carried out to the isolation insulating film 207 successively after, can be with
Including：Temperature range be 450 to 600 degrees Celsius, processing time be within 30 minutes under conditions of, at the steam of silicon chip
Science and engineering skill carries out cure process to the isolation insulating film 207.
The present embodiment provide flash memory isolation insulating film preparation method, by using autoregistration shallow channel every
Separating process forms shallow trench isolation regions, will not produce damage to the gate oxide level of flash memory, will not make flash
The gate oxide level of device forms the phenomenon of similar " beak "；Isolation insulating film is formed by spin coating mode, isolation can be reduced
Cavity in dielectric film, realize and filled without cavity, similar yield and integrity problem excessively caused by high stress will not be brought again；
By carrying out the first wet-treating and the second wet-treating to isolation insulating film successively, can remove miscellaneous in isolation insulating film
Matter, making to put isolation insulating film has good filling capacity, improves the performance of isolation insulating film, and then improve flash
The yield and reliability of device.
The embodiment of the present invention additionally provides a kind of isolation insulating film of flash memory, and the isolation insulating film uses this hair
The preparation method of the isolation insulating film for the flash memory that bright any embodiment provides is made.
Pay attention to, the above is only presently preferred embodiments of the present invention.It will be appreciated by those skilled in the art that the invention is not restricted to
Specific embodiment described here, it can carry out various significantly changing, readjust and replacing for a person skilled in the art
In generation, is without departing from protection scope of the present invention.Therefore, although having been carried out by above example to the present invention more detailed
Illustrate, but the present invention is not limited only to above example, without departing from the inventive concept, can also include more
Other equivalent embodiments, and the scope of the present invention is determined by scope of the appended claims.
Claims (11)
- A kind of 1. preparation method of the isolation insulating film of flash memory, it is characterised in that including：Form the laminated construction being made up of successively substrate, gate oxide level, floating gate polysilicon layer and mask nitride layer；Shallow trench isolation regions are formed in the laminated construction；Liner oxide layer is formed on the inwall of the shallow trench isolation regions；Isolation insulating film is formed in the liner oxide layer and the mask nitride layer by spin coating mode；The first wet-treating and the second wet-treating, the first wet processing process condition bag are carried out to the isolation insulating film successively Temperature range is included as 50 to 80 degrees Celsius, processing time is 10 to 60 minutes and liquid environment is warm water；Second wet-treating Including successively the mixed solution and ammonium hydroxide of sulfuric acid and hydrogen peroxide, the mixed liquor of hydrogen peroxide and water liquid environment in, Wet-treating is carried out to described isolation insulating film.
- 2. according to the method for claim 1, it is characterised in that using autoregistration shallow trench isolation technique in the lamination knot Shallow trench isolation regions are formed in structure.
- 3. according to the method for claim 1, it is characterised in that described that lining is formed on the inwall of the shallow trench isolation regions The process of bottom oxide skin(coating) includes：High temperature oxidation process, on-site steam generation technique or atom layer deposition process.
- 4. the method according to claim 1 or 3, it is characterised in that the thickness of the liner oxide layer is received for 3 to 10 Rice.
- 5. according to the method for claim 1, it is characterised in that substrate oxygen is formed on the inwall of the shallow trench isolation regions After compound layer, isolated insulation is being formed in the liner oxide layer and the mask nitride layer by spin coating mode Before film, in addition to：Temperature range be 700 to 900 degrees Celsius, processing time scope is 10 to 60 minutes and atmosphere is N2Or N2 Under conditions of Ar mixed gas, n 2 annealing processing is carried out to the liner oxide layer.
- 6. according to the method for claim 1, it is characterised in that it is described by spin coating mode the liner oxide layer with And the material of formation isolation insulating film includes on the mask nitride layer：Polysilazane.
- 7. the method according to claim 1 or 6, it is characterised in that the thickness of the isolation insulating film is received for 400 to 500 Rice.
- 8. according to the method for claim 1, it is characterised in that it is described by spin coating mode the liner oxide layer with And formed on the mask nitride layer after isolation insulating film, in addition to：Under conditions of temperature range is 250 to 300 degrees Celsius, processing time is 20 to 60 minutes, at the steam of silicon chip Science and engineering skill carries out cure process to the isolation insulating film.
- 9. according to the method for claim 1, it is characterised in that described that the first wet method is carried out to the isolation insulating film successively The number of processing and the second wet-treating is 2 to 5 times.
- 10. according to the method for claim 1, it is characterised in that described wet to isolation insulating film progress first successively After method processing and the second wet-treating, in addition to：Temperature range be 450 to 600 degrees Celsius, processing time be within 30 minutes under conditions of, at the steam of silicon chip Science and engineering skill carries out cure process to the isolation insulating film.
- 11. a kind of isolation insulating film of flash memory, it is characterised in that using fast any one of claim 1-10 The preparation method of the isolation insulating film of flash memory is made.
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| CN110265402B (en) * | 2019-06-27 | 2020-09-18 | 长江存储科技有限责任公司 | A 3D NAND memory device and its manufacturing method |
| CN111106057A (en) * | 2019-11-18 | 2020-05-05 | 华虹半导体(无锡)有限公司 | Method for manufacturing STI (shallow trench isolation) structure of flash memory device and flash memory device |
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Address after: 502 / 15, building 1, 498 GuoShouJing Road, Zhangjiang High Tech Park, Pudong New Area, Shanghai 201203 Patentee after: SHANGHAI GEYI ELECTRONIC Co.,Ltd. Patentee after: Zhaoyi Innovation Technology Group Co.,Ltd. Address before: 502 / 15, building 1, 498 GuoShouJing Road, Zhangjiang High Tech Park, Pudong New Area, Shanghai 201203 Patentee before: SHANGHAI GEYI ELECTRONIC Co.,Ltd. Patentee before: GIGADEVICE SEMICONDUCTOR(BEIJING) Inc. |
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