CN105223748B - Display panel and display device using same - Google Patents
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Abstract
本发明公开一种显示面板和应用其显示面板的显示装置。显示面板包含一第一基板、一第二基板以及一显示介质,显示介质设置于第一基板和第二基板之间。第一基板包含一第一导电层及一第二导电层,第一导电层具有一第一线宽,第二导电层设置于第一导电层上,第二导电层具有一第二线宽且第二线宽小于第一线宽并于第二导电层两侧显露出部分第一导电层。第二导电层的一第一侧边和与其同侧的第一导电层的一第二侧边具有一第一间距,第二导电层的相对于第一侧边的一第三侧边和与其同侧的第一导电层的一第四侧边具有一第二间距,其中第一间距大于第二间距。
The present invention discloses a display panel and a display device using the display panel. The display panel includes a first substrate, a second substrate and a display medium, wherein the display medium is disposed between the first substrate and the second substrate. The first substrate includes a first conductive layer and a second conductive layer, wherein the first conductive layer has a first line width, and the second conductive layer is disposed on the first conductive layer, wherein the second conductive layer has a second line width which is smaller than the first line width and partially exposes the first conductive layer on both sides of the second conductive layer. A first side edge of the second conductive layer and a second side edge of the first conductive layer on the same side have a first spacing, and a third side edge of the second conductive layer relative to the first side edge and a fourth side edge of the first conductive layer on the same side have a second spacing, wherein the first spacing is greater than the second spacing.
Description
技术领域technical field
本发明涉及一种显示面板和应用其显示面板的显示装置,且特别是涉及一种具有多层导线于基板上的显示面板和应用其的显示装置。The present invention relates to a display panel and a display device using the display panel, and in particular to a display panel with multi-layer wires on a substrate and a display device using the display panel.
背景技术Background technique
随着大尺寸平面显示器市场的快速发展,其薄膜晶体管基板的相关制作工艺的改良也快速进行。其中,由于铜制作工艺具有低电阻率(约为铝的60%),其较小的截面积使得金属线间的寄生电容降低而能够降低串音(crosstalk),且铜具有高抗电、高抗热致迁性而令其在较小的截面积仍能具有相对高的可靠性,因此,铜制作工艺进而逐渐取代铝制作工艺而渐渐成为市场主流。With the rapid development of the large-size flat-panel display market, the improvement of the related manufacturing process of its thin film transistor substrate is also proceeding rapidly. Among them, because the copper manufacturing process has low resistivity (about 60% of aluminum), its small cross-sectional area reduces the parasitic capacitance between metal lines and can reduce crosstalk (crosstalk), and copper has high resistance to electricity, high Due to its thermal migration resistance, it can still have relatively high reliability in a small cross-sectional area. Therefore, the copper manufacturing process gradually replaces the aluminum manufacturing process and gradually becomes the mainstream of the market.
然而,铜仍具有与基板附着不易而易脱落的问题需要克服。因此,如何提供一种具有良好显示品质的显示器并克服相关的制作工艺的困难与问题,为相关业者努力的课题之一。However, copper still has the problem that it is not easy to adhere to the substrate and is easy to fall off. Therefore, how to provide a display with good display quality and overcome the difficulties and problems related to the manufacturing process is one of the subjects that the relevant industry is striving for.
发明内容Contents of the invention
本发明的目的在于一种显示面板和应用其显示面板的显示装置。实施例的显示面板中,其基板中的第二导电层设置于第一导电层上并于其两侧显露出部分第一导电层,且第二导电层两侧和第一导电层的两侧之间分别具有两个间距,此两个间距的其中之一者大于另一者,因此可以避免因过蚀造成的两个导电层的断线或损伤,进而可以减少阻抗不匹配的问题的产生。The object of the present invention is a display panel and a display device using the display panel. In the display panel of the embodiment, the second conductive layer in the substrate is disposed on the first conductive layer and part of the first conductive layer is exposed on both sides thereof, and both sides of the second conductive layer and both sides of the first conductive layer There are two spacings between them, one of the two spacings is larger than the other, so the disconnection or damage of the two conductive layers caused by over-etching can be avoided, and the problem of impedance mismatch can be reduced. .
为达上述目的,本发明提出一种显示面板。显示面板包含一第一基板、一第二基板以及一显示介质,显示介质设置于第一基板和第二基板之间。第一基板包含一第一导电层及一第二导电层,第一导电层具有一第一线宽,第二导电层设置于第一导电层上,第二导电层具有一第二线宽且第二线宽小于第一线宽并于第二导电层两侧显露出部分第一导电层。第二导电层的一第一侧边和与其同侧的第一导电层的一第二侧边具有一第一间距,第二导电层的相对于第一侧边的一第三侧边和与其同侧的第一导电层的一第四侧边具有一第二间距,其中第一间距大于第二间距。To achieve the above purpose, the present invention provides a display panel. The display panel includes a first substrate, a second substrate and a display medium, and the display medium is arranged between the first substrate and the second substrate. The first substrate includes a first conductive layer and a second conductive layer, the first conductive layer has a first line width, the second conductive layer is disposed on the first conductive layer, the second conductive layer has a second line width and the second conductive layer The second line width is smaller than the first line width and part of the first conductive layer is exposed on both sides of the second conductive layer. There is a first distance between a first side of the second conductive layer and a second side of the first conductive layer on the same side thereof, a third side of the second conductive layer opposite to the first side and the same side thereof A fourth side of the first conductive layer on the same side has a second distance, wherein the first distance is greater than the second distance.
本发明还提出一种显示装置。显示装置包含一显示面板以及一驱动电路,且驱动电路电连接显示面板。显示面板包含一第一基板、一第二基板以及一显示介质,显示介质设置于第一基板和第二基板之间。第一基板包含一第一导电层及一第二导电层,第一导电层具有一第一线宽,第二导电层设置于第一导电层上,第二导电层具有一第二线宽且第二线宽小于第一线宽并于第二导电层两侧显露出部分第一导电层。第二导电层的一第一侧边和与其同侧的第一导电层的一第二侧边具有一第一间距,第二导电层的相对于第一侧边的一第三侧边和与其同侧的第一导电层的一第四侧边具有一第二间距,其中第一间距大于第二间距。The invention also provides a display device. The display device includes a display panel and a driving circuit, and the driving circuit is electrically connected to the display panel. The display panel includes a first substrate, a second substrate and a display medium, and the display medium is arranged between the first substrate and the second substrate. The first substrate includes a first conductive layer and a second conductive layer, the first conductive layer has a first line width, the second conductive layer is disposed on the first conductive layer, the second conductive layer has a second line width and the second conductive layer The second line width is smaller than the first line width and part of the first conductive layer is exposed on both sides of the second conductive layer. There is a first distance between a first side of the second conductive layer and a second side of the first conductive layer on the same side thereof, a third side of the second conductive layer opposite to the first side and the same side thereof A fourth side of the first conductive layer on the same side has a second distance, wherein the first distance is greater than the second distance.
为了对本发明的上述及其他方面有更佳的了解,下文特举优选实施例,并配合所附的附图,作详细说明如下:In order to have a better understanding of the above-mentioned and other aspects of the present invention, the preferred embodiments are specifically cited below, together with the accompanying drawings, and described in detail as follows:
附图说明Description of drawings
图1A为本发明一实施例的显示面板的示意图;FIG. 1A is a schematic diagram of a display panel according to an embodiment of the present invention;
图1B为本发明一实施例的第一基板的俯视图;1B is a top view of a first substrate according to an embodiment of the present invention;
图2A为本发明一实施例的第一基板局部区域放大的俯视图;2A is an enlarged top view of a partial area of the first substrate according to an embodiment of the present invention;
图2B为沿剖面线2B-2B’的剖视图;Figure 2B is a cross-sectional view along section line 2B-2B';
图3A~图3B为具有不同形状的导电层的蚀刻前后的示意图;3A-3B are schematic diagrams before and after etching of conductive layers with different shapes;
图4A为本发明另一实施例的一基板局部放大的俯视图;4A is a partially enlarged top view of a substrate according to another embodiment of the present invention;
图4B为沿剖面线4B-4B’的剖视图;Figure 4B is a cross-sectional view along section line 4B-4B';
图5A~图5B为本发明的实施例的导电层对位偏移的示意图;5A to 5B are schematic diagrams of the alignment offset of the conductive layer according to the embodiment of the present invention;
图6为本发明的实施例的一种显示装置的方块图。FIG. 6 is a block diagram of a display device according to an embodiment of the present invention.
符号说明Symbol Description
1:显示装置1: display device
10:显示面板10: Display panel
100:第一基板100: first substrate
101:显示区101: display area
102:显示驱动电路区102: Display drive circuit area
100’:基板100': Substrate
110:第一导电层110: first conductive layer
110E、120E:延伸部110E, 120E: extension
110s、120s:底面110s, 120s: bottom surface
120:第二导电层120: second conductive layer
120E:延伸部120E: extension
130:介电层130: dielectric layer
20:驱动电路20: Drive circuit
200:显示介质200: display media
300:第二基板300: second substrate
410、410’、610、610’:导电层410, 410', 610, 610': conductive layer
2B-2B’、4B-4B’:剖面线2B-2B’, 4B-4B’: Hatching
A1、A2、A3:重叠部分A1, A2, A3: overlapping parts
B、B1、B2:弯折部分B, B1, B2: bending part
D1:第一间距D1: first spacing
D2:第二间距D2: second spacing
P:外凸区域P: convex area
R、R1、R1’、R2、R2’:内凹区域R, R1, R1’, R2, R2’: concave area
S1:第一侧边S1: first side
S2:第二侧边S2: second side
S3:第三侧边S3: third side
S4:第四侧边S4: Fourth side
W1:第一线宽W1: first line width
W2:第二线宽W2: second line width
θ1:第一角度θ1: first angle
θ2:第二角度θ2: second angle
θ3:第三角度θ3: third angle
θ4:第四角度θ4: Fourth angle
具体实施方式Detailed ways
根据本发明的实施例,显示面板中,其基板上的第二导电层设置于第一导电层上并于其两侧显露出部分第一导电层,且第二导电层两侧和第一导电层的两侧之间分别具有一个间距,此两个间距的其中之一者大于另一者,因此可以避免因过蚀造成的两个导电层的断线或损伤,进而可以减少阻抗不匹配的问题的产生。以下参照所附的附图详细叙述本发明的实施例。附图中相同的标号用以标示相同或类似的部分。需注意的是,附图已简化以利清楚说明实施例的内容,实施例所提出的细部结构仅为举例说明之用,并非对本发明欲保护的范围做限缩。具有通常知识者当可依据实际实施态样的需要对该些结构加以修饰或变化。According to an embodiment of the present invention, in the display panel, the second conductive layer on the substrate is disposed on the first conductive layer and part of the first conductive layer is exposed on both sides thereof, and both sides of the second conductive layer are connected to the first conductive layer. There is a gap between the two sides of the layer, one of the two gaps is larger than the other, so the disconnection or damage of the two conductive layers caused by over-etching can be avoided, and the impedance mismatch can be reduced. The problem arises. Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. The same reference numerals are used in the drawings to designate the same or similar parts. It should be noted that the drawings have been simplified to clearly illustrate the content of the embodiments, and the detailed structures proposed in the embodiments are for illustration purposes only, and are not intended to limit the scope of protection of the present invention. Those with ordinary knowledge can modify or change these structures according to the needs of actual implementation.
图1A绘示根据本发明一实施例的显示面板10,图1B绘示根据本发明一实施例的第一基板100的俯视图,图2A绘示根据本发明一实施例的第一基板局部区域放大的俯视图,图2B绘示沿剖面线2B-2B’的剖视图。FIG. 1A shows a display panel 10 according to an embodiment of the present invention, FIG. 1B shows a top view of a first substrate 100 according to an embodiment of the present invention, and FIG. 2A shows an enlarged partial area of the first substrate according to an embodiment of the present invention. 2B shows a cross-sectional view along the section line 2B-2B'.
如图1A所示,显示面板10包括第一基板100、显示介质200以及第二基板300。显示介质200设置于第一基板100和第二基板300之间。实施例中,显示介质200例如是一液晶层或一发光元件,例如是有机发光二极管。如此一来,显示面板10例如是液晶显示面板或有机发光二极管显示面板。如图1B所示,第一基板100包括显示区101与环绕显示区101的显示驱动电路区102。As shown in FIG. 1A , the display panel 10 includes a first substrate 100 , a display medium 200 and a second substrate 300 . The display medium 200 is disposed between the first substrate 100 and the second substrate 300 . In an embodiment, the display medium 200 is, for example, a liquid crystal layer or a light emitting element, such as an organic light emitting diode. In this way, the display panel 10 is, for example, a liquid crystal display panel or an OLED display panel. As shown in FIG. 1B , the first substrate 100 includes a display area 101 and a display driving circuit area 102 surrounding the display area 101 .
如图2A~图2B所示,第一基板100包含一第一导电层110及一第二导电层120,第二导电层120设置于第一导电层110上。第一导电层110具有一第一线宽W1,第二导电层120具有一第二线宽W2,第二线宽W2小于第一线宽W1并于第二导电层120两侧显露出部分第一导电层110。第二导电层120的一第一侧边S1和与其同侧的第一导电层110的一第二侧边S2具有一第一间距D1,第二导电层120的相对于第一侧边S1的一第三侧边S3和与其同侧的第一导电层110的一第四侧边S4具有一第二间距D2,其中第一间距D1大于第二间距D2。As shown in FIGS. 2A-2B , the first substrate 100 includes a first conductive layer 110 and a second conductive layer 120 , and the second conductive layer 120 is disposed on the first conductive layer 110 . The first conductive layer 110 has a first line width W1, the second conductive layer 120 has a second line width W2, the second line width W2 is smaller than the first line width W1 and part of the first conductive layer is exposed on both sides of the second conductive layer 120. Layer 110. A first side S1 of the second conductive layer 120 and a second side S2 of the first conductive layer 110 on the same side have a first distance D1, and the distance between the second conductive layer 120 relative to the first side S1 A third side S3 and a fourth side S4 of the first conductive layer 110 on the same side have a second distance D2, wherein the first distance D1 is greater than the second distance D2.
如图2B所示,本实施例中,第一导电层110与第二导电层120接触叠置以形成具复合层的一导电线路。一实施例中,此导电线路例如是薄膜晶体管基板上的数据线(dataline)或扫描线(scan line)。在实施例中,第一导电层110与第二导电层120例如是位于显示驱动电路区102的栅极驱动电路中或是数据驱动电路中。在另一实施例中,第一导电层110与第二导电层120例如是位于显示区101中。As shown in FIG. 2B , in this embodiment, the first conductive layer 110 and the second conductive layer 120 are stacked in contact to form a conductive circuit with a composite layer. In one embodiment, the conductive lines are, for example, data lines or scan lines on the thin film transistor substrate. In an embodiment, the first conductive layer 110 and the second conductive layer 120 are, for example, located in the gate driving circuit or the data driving circuit of the display driving circuit area 102 . In another embodiment, the first conductive layer 110 and the second conductive layer 120 are located in the display area 101 , for example.
如图2A所示,第一导电层110与第二导电层120接触叠置而成的导电线路具有一弯折部分(bending portion)B,其中第一间距D1位于导电线路的弯折部分B的内凹区域(recess region)R,第二间距D2位于弯折部分B的外凸区域(protruding region)P。As shown in FIG. 2A , the conductive circuit formed by contacting and stacking the first conductive layer 110 and the second conductive layer 120 has a bending portion (bending portion) B, wherein the first distance D1 is located at the bending portion B of the conductive circuit. In the recessed region (recess region) R, the second distance D2 is located in the protruding region (protruding region) P of the bent portion B.
实施例中,第一导电层110的材质和第二导电层120的材质独立地包括铜、钛等金属层或其复合导电金属层。本实施例中,第一导电层110的材质例如是钛,第二导电层120的材质例如是铜。In an embodiment, the material of the first conductive layer 110 and the material of the second conductive layer 120 independently include metal layers such as copper and titanium or composite conductive metal layers. In this embodiment, the material of the first conductive layer 110 is, for example, titanium, and the material of the second conductive layer 120 is, for example, copper.
图3A和图3B分别绘示具有不同形状的导电层的蚀刻前后的示意图。导电层410经过过度蚀刻后形成导电层410’,而导电层610经过过度蚀刻后形成导电层610’。如图3A所示,现有导电层610的制作中,在光掩模设计时即以预定形成的导电层图案来设计,然在蚀刻过程中,因为蚀刻液容易累积在弯折部分B2的内凹区域R2中,当其他线路图案部分(例如直线的线宽)要达到完全蚀刻以形成具有预定图案的导电层,此时累积在内凹区域R2中的蚀刻液容易造成导电层610的弯折部分B2的过蚀,而过蚀就容易发生导电层610的断线或损伤,形成导电层610’及损伤的内凹区域R2’,进而容易产生阻抗不匹配的问题。相对地,如图3B所示,在本实施例中,在光掩模设计时即设计让导电层410在弯折部分B1的内凹区域R1具有较大面积,因此即使累积在内凹区域R1中的蚀刻液造成导电层410的弯折部分B1的过蚀,但由于本实施例中在弯折部分B1的内凹区域R1具有较大面积,因此可避免上述过蚀的问题,而形成导电层410’及具有贴近预定图案的内凹区域R1’。3A and 3B are schematic diagrams showing before and after etching conductive layers with different shapes, respectively. The conductive layer 410 is over-etched to form a conductive layer 410', and the conductive layer 610 is over-etched to form a conductive layer 610'. As shown in FIG. 3A, in the production of the conventional conductive layer 610, the pattern of the conductive layer to be formed is designed during the design of the photomask, but during the etching process, because the etchant is easy to accumulate in the bent portion B2 In the concave region R2, when other circuit pattern parts (such as the line width of a straight line) are completely etched to form a conductive layer with a predetermined pattern, the etchant accumulated in the concave region R2 will easily cause the conductive layer 610 to bend The over-etching of the part B2, and the over-etching will easily lead to disconnection or damage of the conductive layer 610, forming the conductive layer 610' and the damaged concave region R2', which will easily cause the problem of impedance mismatch. In contrast, as shown in FIG. 3B , in this embodiment, the conductive layer 410 is designed to have a larger area in the concave region R1 of the bending portion B1 during the photomask design, so even if accumulated The etching solution in the conductive layer 410 causes over-etching of the bending portion B1 of the conductive layer 410, but since the concave region R1 of the bending portion B1 has a relatively large area in this embodiment, the above-mentioned over-etching problem can be avoided, and a conductive layer 410 can be formed. The layer 410' has a concave region R1' close to the predetermined pattern.
据此,如前述图2A和图2B所示的由第一导电层110(例如为钛)与第二导电层120(例如为铜)接触叠置以形成具复合层的一导电线路,由于第一导电层110与第二导电层120为不同金属材质,在蚀刻形成预定图案的过程中,会因为蚀刻液对不同金属的蚀刻速率不同(例如第一导电层蚀刻速率大于第二导电层蚀刻速率)而形成如图2A和图2B所示的第二线宽W2小于第一线宽W1并于第二导电层120两侧显露出部分第一导电层110的结构。另外根据前述图3A和图3B所述,蚀刻液会容易累积在弯折部分B的内凹区域R中,因此在图2A和图2B中内凹区域R处的第一导电层110相较于外凸区域P处的第一导电层110更容易被过蚀刻,使得位于弯折部分B的内凹区域R的第一间距D1大于外凸区域P的第二间距D2,且使得第一导电层位于弯折部分B的内凹区域R的侧边与底面的夹角θ1大于外凸区域P的侧边与底面的夹角θ2,第二导电层位于弯折部分B的内凹区域R的侧边与底面的夹角θ3大于外凸区域P的侧边与底面的夹角θ4。Accordingly, as shown in the above-mentioned FIG. 2A and FIG. 2B, the first conductive layer 110 (such as titanium) and the second conductive layer 120 (such as copper) are contacted and stacked to form a conductive circuit with a composite layer. The first conductive layer 110 and the second conductive layer 120 are made of different metal materials. In the process of etching to form a predetermined pattern, the etching rate of different metals will be different due to the etching solution (for example, the etching rate of the first conductive layer is greater than that of the second conductive layer. ) to form a structure in which the second line width W2 is smaller than the first line width W1 and part of the first conductive layer 110 is exposed on both sides of the second conductive layer 120 as shown in FIG. 2A and FIG. 2B . In addition, according to the aforementioned FIG. 3A and FIG. 3B , the etchant will easily accumulate in the concave region R of the bent portion B, so the first conductive layer 110 at the concave region R in FIG. 2A and FIG. 2B is compared to The first conductive layer 110 at the protruding region P is more likely to be over-etched, so that the first distance D1 of the concave region R located at the bent portion B is greater than the second distance D2 of the protruding region P, and the first conductive layer The included angle θ1 between the sides and the bottom of the concave region R located in the bent portion B is greater than the included angle θ2 between the sides and the bottom of the convex region P, and the second conductive layer is located on the side of the concaved region R of the bent portion B The included angle θ3 between the sides and the bottom surface is greater than the included angle θ4 between the side edges and the bottom surface of the protruding region P.
实施例中,第一间距D1例如是第二间距D2的1.1~3倍。In an embodiment, the first distance D1 is, for example, 1.1˜3 times of the second distance D2.
举例而言,一实施例中,第二导电层120的第二线宽W2例如是4.34微米(μm),第一间距D1例如是0.68微米,第二间距D2例如是0.39微米,则第一间距D1是第二间距D2的1.74倍;另一实施例中,第二导电层120的第二线宽W2例如是8.89微米,第一间距D1例如是1.25微米,第二间距D2例如是0.87微米,则第一间距D1是第二间距D2的1.44倍。For example, in one embodiment, the second line width W2 of the second conductive layer 120 is, for example, 4.34 microns (μm), the first distance D1 is, for example, 0.68 microns, and the second distance D2 is, for example, 0.39 microns, then the first distance D1 It is 1.74 times of the second spacing D2; in another embodiment, the second line width W2 of the second conductive layer 120 is, for example, 8.89 microns, the first spacing D1 is, for example, 1.25 microns, and the second spacing D2 is, for example, 0.87 microns, then the second The first distance D1 is 1.44 times the second distance D2.
实施例中,第一间距D1例如是第二导电层120的第二线宽W2的约10~20%,例如是10%,比方说可以是9.95~11.07%;第二间距D2例如是第二导电层120的第二线宽W2的约1~10%,例如是6%,比方说可以是6.35~6.92%。In an embodiment, the first distance D1 is, for example, about 10-20% of the second line width W2 of the second conductive layer 120, such as 10%, for example, 9.95-11.07%; the second distance D2 is, for example, the second About 1-10% of the second line width W2 of the layer 120 is, for example, 6%, such as 6.35-6.92%.
实施例中,如图2B所示,第一导电层110的第二侧边S2与第一导电层110的一底面110s具有一第一角度θ1,第一导电层110的第四侧边S4与第一导电层110的底面110s具有一第二角度θ2,第一角度θ1例如是第二角度θ2的1.1~2倍。In an embodiment, as shown in FIG. 2B, the second side S2 of the first conductive layer 110 and a bottom surface 110s of the first conductive layer 110 have a first angle θ1, and the fourth side S4 of the first conductive layer 110 and The bottom surface 110s of the first conductive layer 110 has a second angle θ2, and the first angle θ1 is, for example, 1.1˜2 times the second angle θ2.
举例而言,一实施例中,第一角度θ1例如是15.00°,第二角度θ2例如是11.85°,则第一角度θ1是第二角度θ2的1.27倍;另一实施例中,第一角度θ1例如是57.26°,第二角度θ2例如是30.14°,则第一角度θ1是第二角度θ2的1.90倍。For example, in one embodiment, the first angle θ1 is, for example, 15.00°, and the second angle θ2 is, for example, 11.85°, then the first angle θ1 is 1.27 times the second angle θ2; in another embodiment, the first angle θ1 is, for example, 57.26°, and the second angle θ2 is, for example, 30.14°, so the first angle θ1 is 1.90 times the second angle θ2.
再者,实施例中,如图2B所示,第二导电层120的第一侧边S1与第二导电层120的一底面120s具有一第三角度θ3,第二导电层120的第三侧边S3与第二导电层120的底面120s具有一第四角度θ4,第三角度θ3例如是第四角度θ4的1.1~2倍。Moreover, in the embodiment, as shown in FIG. 2B , the first side S1 of the second conductive layer 120 and a bottom surface 120s of the second conductive layer 120 have a third angle θ3, and the third side of the second conductive layer 120 The side S3 and the bottom surface 120s of the second conductive layer 120 have a fourth angle θ4, and the third angle θ3 is, for example, 1.1˜2 times of the fourth angle θ4.
举例而言,一实施例中,第三角度θ3例如是65.91°,第四角度θ4例如是59.24°,则第三角度θ3是第四角度θ4的1.11倍;另一实施例中,第三角度θ3例如是41.19°,第四角度θ4例如是23.87°,则第三角度θ3是第四角度θ4的1.73倍。For example, in one embodiment, the third angle θ3 is, for example, 65.91°, and the fourth angle θ4 is, for example, 59.24°, then the third angle θ3 is 1.11 times the fourth angle θ4; in another embodiment, the third angle θ3 is, for example, 41.19°, and the fourth angle θ4 is, for example, 23.87°, so the third angle θ3 is 1.73 times the fourth angle θ4.
实施例中,可通过光掩模设计来让导电线路的弯折部分的内凹区域具有较大面积来避免因过蚀造成的第一导电层110/第二导电层120的断线或损伤,进而可以减少阻抗不匹配的问题的产生,另外由于第一导电层和第二导电层蚀刻速率不同,结构上会使得第一间距D1大于第二间距D2,且第一导电层位于弯折部分B的内凹区域R的第一角度θ1大于外凸区域P的第二角度θ2,第二导电层位于弯折部分B的内凹区域R的第三角度θ3大于外凸区域P的第四角度θ4。In the embodiment, the concave region of the bent portion of the conductive line can have a larger area through the design of the photomask to avoid disconnection or damage of the first conductive layer 110/second conductive layer 120 caused by over-etching, In turn, the problem of impedance mismatch can be reduced. In addition, due to the different etching rates of the first conductive layer and the second conductive layer, the structure will make the first distance D1 larger than the second distance D2, and the first conductive layer is located at the bending part B The first angle θ1 of the concave region R is greater than the second angle θ2 of the convex region P, and the third angle θ3 of the concave region R of the second conductive layer located in the bending part B is greater than the fourth angle θ4 of the convex region P .
图4A绘示根据本发明另一实施例的一基板局部放大的俯视图,图4B绘示沿剖面线4B-4B’的剖视图。图4A~图4B所示的基板100’可以作为显示面板10的第一基板100。本实施例中与前述实施例相同的元件沿用同样的元件标号,且相同元件的相关说明请参考前述,在此不再赘述。FIG. 4A shows a partially enlarged top view of a substrate according to another embodiment of the present invention, and FIG. 4B shows a cross-sectional view along section line 4B-4B'. The substrate 100' shown in FIGS. 4A-4B can be used as the first substrate 100 of the display panel 10. Referring to FIG. The components in this embodiment that are the same as those in the previous embodiments use the same component numbers, and for the related description of the same components, please refer to the above, and details will not be repeated here.
如图4A~图4B所示,第一基板100’包含一第一导电层110及一第二导电层120,第二导电层120设置于第一导电层110上。第一导电层110具有一第一线宽W1,第二导电层120具有一第二线宽W2,第二线宽W2小于第一线宽W1并于第二导电层120两侧显露出部分第一导电层110。第二导电层120的一第一侧边S1和与其同侧的第一导电层110的一第二侧边S2具有一第一间距D1,第二导电层120的相对于第一侧边S1的一第三侧边S3和与其同侧的第一导电层110的一第四侧边S4具有一第二间距D2,其中第一间距D1大于第二间距D2。As shown in FIGS. 4A-4B , the first substrate 100 ′ includes a first conductive layer 110 and a second conductive layer 120 , and the second conductive layer 120 is disposed on the first conductive layer 110 . The first conductive layer 110 has a first line width W1, the second conductive layer 120 has a second line width W2, the second line width W2 is smaller than the first line width W1 and part of the first conductive layer is exposed on both sides of the second conductive layer 120. Layer 110. A first side S1 of the second conductive layer 120 and a second side S2 of the first conductive layer 110 on the same side have a first distance D1, and the distance between the second conductive layer 120 relative to the first side S1 A third side S3 and a fourth side S4 of the first conductive layer 110 on the same side have a second distance D2, wherein the first distance D1 is greater than the second distance D2.
实施例中,第一间距D1例如是第二间距D2的1.1~3倍。In an embodiment, the first distance D1 is, for example, 1.1˜3 times of the second distance D2.
举例而言,一实施例中,第一导电层110的第一线宽W1例如是22.43微米,第二导电层120的第二线宽W2例如是19.28微米,第一间距D1例如是1.67微米,第二间距D2例如是1.48微米,第一间距D1则是第二间距D2的1.13倍。For example, in one embodiment, the first line width W1 of the first conductive layer 110 is, for example, 22.43 microns, the second line width W2 of the second conductive layer 120 is, for example, 19.28 microns, and the first distance D1 is, for example, 1.67 microns. The second distance D2 is, for example, 1.48 microns, and the first distance D1 is 1.13 times the second distance D2.
如图4B所示,第一基板100’还包括一介电层130。介电层130位于第一导电层110与第二导电层120之间。一实施例中,此第一导电层110/介电层130/第二导电层120的复合结构例如是薄膜晶体管基板上的存储电容。As shown in FIG. 4B , the first substrate 100' further includes a dielectric layer 130. Referring to FIG. The dielectric layer 130 is located between the first conductive layer 110 and the second conductive layer 120 . In one embodiment, the composite structure of the first conductive layer 110 /dielectric layer 130 /second conductive layer 120 is, for example, a storage capacitor on a thin film transistor substrate.
如图4A所示,第二导电层120于第一侧边S1具有一延伸部120E,第一导电层110于第二测边S2也具有一延伸部110E。换言之,本实施例中,第一导电层110与第二导电层120具有T字形状。As shown in FIG. 4A , the second conductive layer 120 has an extension 120E on the first side S1 , and the first conductive layer 110 also has an extension 110E on the second side S2 . In other words, in this embodiment, the first conductive layer 110 and the second conductive layer 120 have a T shape.
实施例中,第一导电层110的材质和第二导电层120的材质可包括铜、钛等金属或其复合导电金属层。本实施例中,第一导电层110的材质和第二导电层120的材质相同。本实施例中,第一导电层110的材质和第二导电层120的材质均为铜。In an embodiment, the material of the first conductive layer 110 and the material of the second conductive layer 120 may include copper, titanium or other metals or composite conductive metal layers. In this embodiment, the material of the first conductive layer 110 is the same as that of the second conductive layer 120 . In this embodiment, the material of the first conductive layer 110 and the material of the second conductive layer 120 are both copper.
图5A~图5B绘示根据本发明的实施例的导电层对位偏移的示意图。图5A绘示第一导电层110朝向第二导电层120的第四侧边S4靠近而发生对位偏移,图5B绘示第一导电层110朝向第二导电层120的第二侧边S2靠近而发生对位偏移。5A-5B are schematic diagrams illustrating the alignment shift of the conductive layer according to an embodiment of the present invention. FIG. 5A shows that the first conductive layer 110 approaches the fourth side S4 of the second conductive layer 120 to cause an alignment shift, and FIG. 5B shows that the first conductive layer 110 faces the second side S2 of the second conductive layer 120. Alignment shift due to proximity.
实施例中,第一导电层110/介电层130/第二导电层120的复合结构作为T字形的存储电容,而存储电容的电容值和第一导电层110与第二导电层120重叠的面积有关,因此当两个导电层发生对位偏移时,会改变两者重叠的面积,进而改变此存储电容的电容值。重叠面积过小时,造成存储电容的电容值不足,可能会发生漏电流的状况,则电压会下降,则显示画面的颜色亮度便会随的改变,进一步造成像素的显示效果衰减(decay)。In the embodiment, the composite structure of the first conductive layer 110/dielectric layer 130/second conductive layer 120 is used as a T-shaped storage capacitor, and the capacitance value of the storage capacitor and the overlap between the first conductive layer 110 and the second conductive layer 120 Therefore, when the alignment shift occurs between the two conductive layers, the overlapping area of the two conductive layers will be changed, thereby changing the capacitance value of the storage capacitor. If the overlapping area is too small, the capacitance value of the storage capacitor is insufficient, leakage current may occur, the voltage will drop, and the color brightness of the display screen will change accordingly, further causing the display effect of the pixel to decay (decay).
如图5A所示,T字形的存储电容结构中,当第一导电层110朝向第二导电层120的第四侧边S4靠近而发生对位偏移时,不仅第一导电层110与第二导电层120的重叠面积没有减少,反而增加了一个重叠部分A1的面积,这造成存储电容的电容值上升。相对地,如图5B所示,当第一导电层110朝向第二导电层120的第二侧边S2靠近而发生对位偏移时,第一导电层110与第二导电层120原本重叠的部分A2和A3不再重叠,因此造成重叠面积减小,电容值下降。As shown in FIG. 5A , in the T-shaped storage capacitor structure, when the first conductive layer 110 approaches the fourth side S4 of the second conductive layer 120 and the alignment shift occurs, not only the first conductive layer 110 and the second The overlapping area of the conductive layer 120 does not decrease, but increases the area of an overlapping portion A1, which causes the capacitance value of the storage capacitor to increase. Conversely, as shown in FIG. 5B , when the first conductive layer 110 approaches the second side S2 of the second conductive layer 120 to cause an alignment shift, the first conductive layer 110 and the second conductive layer 120 originally overlap Parts A2 and A3 no longer overlap, thus resulting in a reduced overlapping area and a reduced capacitance value.
据此,根据本发明的实施例,第一导电层110与第二导电层120构成的存储电容结构中,设计让第一导电层110靠近第二导电层120的第二侧边S4或远离第二导电层120的第一侧边S1,使得位于朝向第一侧边S1(延伸部120E)的第一间距D1大于位于朝向第三侧边S3的第二间距D2,也就是说,在朝向第一侧边S1的方向留下较大的对位偏移缓冲空间,可以有利于避免制作工艺中因为光掩模对位偏移,而使得第一导电层110与第二导电层120两者重叠面积减小而使存储电容的电容值下降的情况。如此一来,即使在制作工艺中发生第一导电层110与第二导电层120的对位偏移,此设计仍有助于维持足够的存储电容,而维持足够的电压压差,令显示画面不会发生衰减,进而可以提高显示品质的稳定性。Accordingly, according to an embodiment of the present invention, in the storage capacitor structure formed by the first conductive layer 110 and the second conductive layer 120, the first conductive layer 110 is designed to be close to the second side S4 of the second conductive layer 120 or far away from the second side S4 of the second conductive layer 120. The first side S1 of the second conductive layer 120, so that the first distance D1 towards the first side S1 (extension 120E) is greater than the second distance D2 towards the third side S3, that is, towards the second side S3. The direction of one side S1 leaves a larger alignment offset buffer space, which is beneficial to avoid the overlapping of the first conductive layer 110 and the second conductive layer 120 due to the alignment offset of the photomask during the manufacturing process. When the area decreases, the capacitance value of the storage capacitor decreases. In this way, even if the alignment of the first conductive layer 110 and the second conductive layer 120 is shifted during the manufacturing process, this design still helps to maintain sufficient storage capacitance and maintain sufficient voltage difference to make the display screen Attenuation does not occur, thereby improving the stability of display quality.
图6绘示根据本发明的实施例的一种显示装置1的方块图。在更一实施例中,如图6所示,本发明提供一种显示装置1,显示装置1可包括前述的显示面板10及一驱动电路20。驱动电路20用以电连接显示面板10以驱动显示面板10,用以接收外部传递来的显示与控制等信号,并将外部信号传递至显示面板10内的显示驱动电路区102以驱动显示区101。FIG. 6 is a block diagram of a display device 1 according to an embodiment of the present invention. In yet another embodiment, as shown in FIG. 6 , the present invention provides a display device 1 . The display device 1 may include the aforementioned display panel 10 and a driving circuit 20 . The drive circuit 20 is used to electrically connect the display panel 10 to drive the display panel 10, to receive externally transmitted display and control signals, and to transmit external signals to the display drive circuit area 102 in the display panel 10 to drive the display area 101. .
本发明的显示面板和应用其的显示装置设计让第二导电层位于第一导电层上且第二导电层一侧边以及与其同侧的第一导电层侧边的间距会大于第二导电层另一侧边以及与其同侧的第一导电层另一侧边的间距,且第二导电层一侧边与底面的夹角以及与其同侧第一导电层侧边与底面的夹角的角度会大于第二导电层另一侧边与底面的夹角以及与其同侧第一导电层另一侧边与底面的夹角的角度,来减少阻抗不匹配的问题的产生以及电容质减小造成影像不稳定的问题。The display panel of the present invention and the display device using it are designed so that the second conductive layer is located on the first conductive layer and the distance between one side of the second conductive layer and the side of the first conductive layer on the same side is greater than that of the second conductive layer The distance between the other side and the other side of the first conductive layer on the same side, and the angle between one side of the second conductive layer and the bottom surface and the angle between the side and the bottom surface of the first conductive layer on the same side It will be larger than the angle between the other side of the second conductive layer and the bottom surface and the angle between the other side of the first conductive layer on the same side and the bottom surface to reduce the problem of impedance mismatch and the reduction of capacitance. Image instability problem.
综上所述,虽然结合以上优选实施例公开了本发明,然而其并非用以限定本发明。本发明所属技术领域中具有通常知识者,在不脱离本发明的精神和范围内,当可作各种的更动与润饰。因此,本发明的保护范围应当以附上的权利要求所界定的为准。In summary, although the present invention has been disclosed in conjunction with the above preferred embodiments, they are not intended to limit the present invention. Those skilled in the art of the present invention can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be defined by the appended claims.
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| US20090278126A1 (en) * | 2008-05-06 | 2009-11-12 | Samsung Electronics Co., Ltd. | Metal line substrate, thin film transistor substrate and method of forming the same |
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| US20090278126A1 (en) * | 2008-05-06 | 2009-11-12 | Samsung Electronics Co., Ltd. | Metal line substrate, thin film transistor substrate and method of forming the same |
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