CN105314591B - Micro-nano structure closed pipeline and preparation method thereof - Google Patents
Micro-nano structure closed pipeline and preparation method thereof Download PDFInfo
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- CN105314591B CN105314591B CN201410226331.7A CN201410226331A CN105314591B CN 105314591 B CN105314591 B CN 105314591B CN 201410226331 A CN201410226331 A CN 201410226331A CN 105314591 B CN105314591 B CN 105314591B
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- 239000002086 nanomaterial Substances 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 78
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 66
- 239000002184 metal Substances 0.000 claims abstract description 66
- 238000000034 method Methods 0.000 claims abstract description 34
- 230000008569 process Effects 0.000 claims abstract description 18
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- 230000004927 fusion Effects 0.000 claims abstract description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 28
- 239000011889 copper foil Substances 0.000 claims description 16
- 239000005030 aluminium foil Substances 0.000 claims description 15
- 239000010949 copper Substances 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
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- 239000000126 substance Substances 0.000 claims description 4
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- 229910052737 gold Inorganic materials 0.000 claims description 2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
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Abstract
The present invention provides a micro-nano structure closed pipeline and a preparation method thereof. The preparation method comprises: 1) providing a substrate, forming a flexible material layer on the substrate surface, and forming a plurality of concave groove structures on the flexible material layer surface; 2) forming metal layers on the surfaces of each flexible material layer and various concave groove structures; and 3) providing a metal thin film, achieving the surface and surface fusion welding of the metal film and the metal layer by using an ultrasonic welding process, and forming a plurality of closed pipelines. According to the present invention, the ultrasonic welding process is used, the surfaces of the two layers of the metals are subjected to mutual friction during the work process to form the intermolecular fusion so as to form the closed pipeline, the fusion position is at the molecular layer level, and the concave groove is not affected; the process is simplified, and the product has characteristics of heat resistance and compression resistance; and characteristics of no glue adhering, product thickness reducing, sealing property ensuring and service life prolonging are provided.
Description
Technical field
Field, more particularly to a kind of micro-nano structure closed conduct and its preparation side are manufactured the invention belongs to micro nano structure
Method.
Background technology
The preparation of the closed conduct of micro nano structure yardstick can apply the technique of MEMS (MEMS) in one block of silicon
Realized on piece.In general, it is that one layer of photoresist is coated on silicon chip as sacrificial that micro-nano closed conduct is prepared in MEMS first
Domestic animal layer, the sacrifice layer generally comprises the organic materials such as PI, or the inorganic material such as copper, silicon, or directly prepared in silicon chip surface
Layer of oxide layer, makes part photoresist show specific interconnection pattern after decomposing using special mask plate；Structure sheaf is then deposited,
On structure sheaf by etching technics one through hole of preparation to sacrificial layer surface；Acetone or other basic solvents are subsequently injected into,
Solvent dissolves photoresist through through hole, and the sacrifice layer that photoresist is made just is removed, and cavity is formd under structure sheaf；Because knot
Through hole and gap are also provided with, it is necessary to be sealed on structure layer, and method has various, including simple coating epoxy resin or photoetching
Glue, chemical vapor deposition sealant, structure sheaf surface oxidation and wafer bonding etc..Also a kind of commonly used method is in light
Photoresist exposure shaping after, direct etching silicon chip formed figure, the silicon chip that will then have figure with have figure cover plate (glass or
Silicon chip) it is bonded, constitute the closed conduct of micro/nano level.
But the closed conduct complex process of micro-nano-scale is prepared, it is necessary to the working environment of stabilization, various expensive
Professional equipment, complicated material allotment and skilled operator, input cost are big, and the Product Precision of preparation is high；But intolerant to
Heat is pressure-resistant, with high costs, and with silicon chip as substrate, without the ability that can destroy or force to yield.
A kind of preparation method of more economical micro-nano closed conduct more efficiently is occurred in that at this stage.In flexible or glass
The lamination print glue of glass, metal and ceramic surface coating one, the template for having bulge-structure using a surface is carried out on impressing glue
Impressing, or coated structure glue-photoresist, perform etching to form a series of micro-nano grooves using mask plate；Using sputtering or
Electroplating technology, a thin metal layer is covered on the impressing glue surface of coagulation forming, and the metal can be the good heat conducting materials, the gold such as copper
Category layer is fine and close, excellent thermal conductivity；Prepare a piece of and base material length and width identical metallic film, the metal can be the good heat conduction materials such as copper
Material, is bonded metallic film and matrix structure face using extraordinary glue, and original micro/nano level groove is constituted into closed conduct.
The closed conduct process is simple of such micro-nano-scale, each side input is small, and cost is relatively low, the choosing of flexible parent metal
With making product that there is pliability；But bonded using glue, the mobility control of glue does not with great difficulty shut pipeline, product integral thickness
Increase, the sealing of pipeline needs to be considered, and may influence service life.
The content of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide a kind of micro-nano structure closed conduct and
Its preparation method, for solving micro-nano structure closed conduct in the prior art and its technical difficulty of preparation greatly, high cost, intolerant to
The problems such as HTHP or pipeline are easily blocked, sealing property is low, thickness is larger.
In order to achieve the above objects and other related objects, the present invention provides a kind of preparation side of micro-nano structure closed conduct
Method, at least comprises the following steps：
1) substrate is provided, flexible material layer is formed in the substrate surface, be formed with the flexible material layer surface
Multiple groove structures；
2) in the flexible material layer and the forming metal layer on surface of each groove structure；
3) metallic film is provided, realizes the metallic film with the metal level and face using ultrasonic welding process
Fusion welding, form multiple closed conducts.
As a kind of preferred scheme of the preparation method of micro-nano structure closed conduct of the invention, step 1) including following step
Suddenly：
One substrate 1-1) is provided, flexible material layer is formed in the substrate surface；
1-2) providing a surface has the mould of bulge-structure, by the mould using the method for impressing in the flexible material
Bed of material surface is formed with multiple groove structures；
Or comprise the following steps：
One substrate 1-1) is provided, flexible material layer is formed in the substrate surface；
The mask layer with etching window 1-2) is formed in the flexible material layer surface, by the mask layer in described
Flexible material layer surface etch goes out multiple groove structures.
As a kind of preferred scheme of the preparation method of micro-nano structure closed conduct of the invention, step 2) including following step
Suddenly：
2-1) Seed Layer is formed in the surface of flexible material layer and each groove structure；
2-2) by the method for plating or chemical plating in the Seed Layer forming metal layer on surface；
Or comprise the following steps：
Directly using sputtering method in the flexible material layer and the forming metal layer on surface of each groove structure.
As a kind of preferred scheme of the preparation method of micro-nano structure closed conduct of the invention, step 3) in, using super
The plumb joint of sound welding equipment applies pressure and welds the metallic film and metal of plumb joint contact area to the metallic film
Layer, and continuous moving contact area finally makes full wafer metallic film form intermolecular fusion with the layer on surface of metal, with shape
Into multiple closed conducts.
Used as a kind of preferred scheme of the preparation method of micro-nano structure closed conduct of the invention, the substrate includes glass
One kind in substrate, ceramic bases, aluminium foil, Copper Foil, PET flexible substrates and PI flexible substrates.
As a kind of preferred scheme of the preparation method of micro-nano structure closed conduct of the invention, the material of the metal level
Including layers of copper and aluminium lamination, the metallic film includes Copper Foil and aluminium foil.
The present invention also provides a kind of micro-nano structure closed conduct, including：
Substrate；
Flexible material layer, is incorporated into the substrate surface, and the flexible material layer surface is formed with multiple groove structures；
Metal level, is incorporated into the surface of the flexible material layer and each groove structure；
Metallic film, is incorporated into the metal level of the flexible material layer surface, and multiple closings are combined into each groove structure
Pipeline.
As a kind of preferred scheme of micro-nano structure closed conduct of the invention, the metal level and the metallic film
Combination is the fusion between the surface molecular formed by Ultrasonic welding processes.
Used as a kind of preferred scheme of micro-nano structure closed conduct of the invention, the substrate includes substrate of glass, ceramics
One kind in substrate, aluminium foil, Copper Foil, PET flexible substrates and PI flexible substrates.
Used as a kind of preferred scheme of micro-nano structure closed conduct of the invention, the flexible material layer is UV glue-lines or heat
Solidification glue-line.
Used as a kind of preferred scheme of micro-nano structure closed conduct of the invention, the depth of the groove structure is 30 microns
~50 microns, width is not less than 50 microns.
As a kind of preferred scheme of micro-nano structure closed conduct of the invention, the material of the metal level include layers of copper and
Aluminium lamination, the metallic film includes Copper Foil and aluminium foil.
As described above, the present invention provides a kind of micro-nano structure closed conduct and preparation method thereof, the preparation method includes
Step：1) substrate is provided, flexible material layer is formed in the substrate surface, multiple is formed with the flexible material layer surface
Groove structure；2) in the flexible material layer and the forming metal layer on surface of each groove structure；3) metallic film is provided, is used
Ultrasonic welding process realizes that the metallic film is welded with the fusion in the metal level and face, forms multiple closed conducts.
The invention has the advantages that：
1) deposited relative to silicon chip and be prepared micro/nano level sealing pipeline, present invention process letter with etching multi-layer framework
Single, equipment investment is low, product heat-resistant pressure-resistant, can select flexible parent metal, and product has pliability.
2) relative to extraordinary glue bonding metal film, good airproof performance of the present invention is more frivolous, extends service life.
3) ultrasonic bonding makes two processed metal levels carry out friction fusion in molecular level, and coverage is minimum, no
The dimensional accuracy of groove can be reduced.
4) widely used radiator is generally metal material at this stage, needs to add when electronic component is radiated
Plus an insulating barrier, and miniflow tube radiator prepared by the present invention is used, when being radiated to electronic device, simultaneously metal structure
Ensure heat conduction efficiency higher, another side insulation ensures that influence will not be produced on the work of electronic device.
5) selection of product base material is various, different according to application and different, thermal transmission requirement is high, cost is allowed and without electric
In the case of insulating requirements, flexible parent metal can also be Copper Foil or aluminium foil etc., material is thus formed the structure of double-sided metal, open up
Range of application of the miniflow tube radiator in field of radiating is opened up.
Brief description of the drawings
Fig. 1~Fig. 2 is shown as the preparation method step 1 of micro-nano structure closed conduct of the invention) structure that is presented shows
It is intended to.
Fig. 3 is shown as the preparation method step 2 of micro-nano structure closed conduct of the invention) structural representation that is presented.
Fig. 4~Fig. 5 is shown as the preparation method step 3 of micro-nano structure closed conduct of the invention) structure that is presented shows
It is intended to, wherein, Fig. 5 is the final structure schematic diagram of micro-nano structure closed conduct of the invention.
Component label instructions
101 substrates
102 flexible material layers
103 groove structures
104 metal levels
105 metallic films
106 closed conducts
Specific embodiment
Embodiments of the present invention are illustrated below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages of the invention and effect easily.The present invention can also be by specific realities different in addition
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Refer to Fig. 1~Fig. 5.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, package count when only display is with relevant component in the present invention rather than according to actual implementation in schema then
Mesh, shape and size are drawn, and the kenel of each component, quantity and ratio can be a kind of random change during its actual implementation, and its
Assembly layout kenel is likely to increasingly complex.
As shown in Fig. 1~Fig. 5, the present embodiment provides a kind of preparation method of micro-nano structure closed conduct, the preparation method
At least comprise the following steps：
As shown in Fig. 1~Fig. 2, step 1 is carried out first), there is provided a substrate 101, form flexibility in the surface of the substrate 101
Material layer 102, multiple groove structures 103 are formed with the surface of the flexible material layer 102.
Specifically, comprise the following steps：
Carry out step 1-1 as shown in Figure 1), there is provided a substrate 101, form flexible material layer in the surface of the substrate 101
102。
As an example, the substrate 101 includes that substrate of glass, ceramic bases, aluminium foil, Copper Foil, PET flexible substrates and PI are soft
One kind in property substrate.The substrate can be selected according to use environment, during if desired for insulating stiff substrate, be may be selected in
Such as ceramic bases or substrate of glass, if desired for conductive rigid substrate, then metallic substrates, such as aluminium foil or Copper Foil can be selected,
Some need the occasion that bending is used, and can select to use PET flexible substrates or PI flexible substrates.In the present embodiment, it is described
Substrate is PET flexible substrates.
As an example, the material of the flexible material layer 102 is UV glue etc., in the present embodiment, using spin-coating method in institute
State the surface of substrate 101 and form the UV glue-lines.It is further to note that UV glue is also known as light-sensitive emulsion, ultraviolet cured adhesive, it can
Used as the sizing material of paint, coating, ink etc..UV is the abbreviation of English Ultraviolet Rays, i.e. ultraviolet light.It is ultraviolet
Line (UV) is invisible, is one section of electromagnetic radiation beyond visible ray, scope of the wavelength in 100~400nm.UV glue
The principle of solidification is that the light trigger (or sensitising agent) in UV curing materials produces work after absorption ultraviolet light under ultraviolet irradiation
Free love base or cation, trigger monomer polymerization, are crosslinked and connect branch chemical reaction, adhesive is converted by liquid within the several seconds
It is solid-state.Certainly, the heat cure glue-line that such as hot padding is used is equally applicable, thus is not limited to this.
Carry out step 1-2 as shown in Figure 2), there is provided a surface has the mould of bulge-structure, by the mould using impressing
Method be formed with multiple groove structures 103 in the surface of the flexible material layer 102.
As an example, the multiple groove structure 103 can be in be independently distributed or network-like interconnection distribution.In this implementation
In example, the multiple groove structure 103 is in be independently distributed.Preferably, the depth of the groove structure is 30 microns~50 microns,
Width is not less than 50 microns.In the present embodiment, the depth of the groove structure 103 is 40 microns, and width is 60 microns.When
So, the size of the groove structure 103 can exceed scope recited herein, be not limited to this.
In addition, in another implementation process, the step 1-2) can also realize in the following way：In the flexible material
102 surface of layer form the mask layer with etching window, go out in the surface etch of the flexible material layer 102 by the mask layer
Multiple groove structures 103.
Certainly, in other embodiments, those skilled in the art can according to demand select various groove knots
The preparation method of structure, however it is not limited to example recited herein.
As shown in figure 3, then carrying out step 2), formed in the surface of the flexible material layer 102 and each groove structure 103
Metal level 104.
Specifically, comprise the following steps：
Step 2-1), form Seed Layer in the surface of the flexible material layer 102 and each groove structure 103.
As an example, using sputtering method or scraping method in the surface formation kind of flexible material layer 102 and each groove structure 103
Sublayer, the Seed Layer is copper, metal catalytic ink, silver paste or can be by the silver bromide of photo-reduction.It is for instance possible to use sputtering method
Layers of copper, aluminium lamination etc. are prepared, and for example, Seed Layer silver paste, metal catalytic ink or can be by light can also be prepared using the method for scraping
Former silver bromide is, it is necessary to explanation, by the silver bromide of photo-reduction, can resolve into the Ag and bromine of conduction in the presence of light
Gas, Ag will be deposited, just can be used as Seed Layer.
Step 2-2), by the method for plating or chemical plating in the Seed Layer forming metal layer on surface 104.
In the present embodiment, using electric plating method in the Seed Layer forming metal layer on surface 104, the metal level
104 can be the metal materials such as copper or aluminium.Certainly, preparing the metal level 104 using the method for chemical plating can also reach
Same effect.
In addition, in another specific implementation process, it is also possible to directly using sputtering method in the flexible material layer 102 and
The forming metal layer on surface 104 of each groove structure 103.
As shown in Fig. 4~Fig. 5, step 3 is finally carried out), there is provided a metallic film 105, using ultrasonic welding process reality
The existing metallic film 105 is welded with the fusion in the face of the metal level 104 and face, forms multiple closed conducts 106.
Specifically, pressure is applied to the metallic film 105 using the plumb joint of ultrasonic welding system and welds plumb joint
The metallic film 105 of contact area and metal level 104, and continuous moving working region finally makes full wafer metallic film 105 and institute
State the surface phase mutual friction of metal level 104 and form intermolecular fusion, to form multiple closed conducts 106.In the present embodiment, institute
Metallic film 105 is stated for Copper Foil or aluminium foil, the material category of the material category of the metallic film 105 and the metal level 104
Unanimously.
As shown in figure 5, the present embodiment also provides a kind of micro-nano structure closed conduct, including：
Substrate 101；
Flexible material layer 102, is incorporated into the surface of the substrate 101, and the surface of the flexible material layer 102 is formed with multiple recessed
Slot structure 103；
Metal level 104, is incorporated into the surface of the flexible material layer 102 and each groove structure 103；
Metallic film 105, is incorporated into the metal level 104 on the surface of the flexible material layer 102, with 103 groups of each groove structure
The multiple closed conducts 106 of synthesis.
As an example, the metal level 104 is by Ultrasonic welding processes shape with the combination of the metallic film 105
Into surface molecular between fusion.
As an example, the substrate 101 includes that substrate of glass, ceramic bases, aluminium foil, Copper Foil, PET flexible substrates and PI are soft
One kind in property substrate.In the present embodiment, the substrate is Copper Foil.
As an example, the flexible material layer 102 is UV glue-lines.
As an example, the multiple groove structure 103 can be in be independently distributed or network-like interconnection distribution.In this implementation
In example, the multiple groove structure 103 is in be independently distributed.Preferably, the depth of the groove structure 103 is 30 microns~50 micro-
Rice, width is not less than 50 microns.In the present embodiment, the depth of the groove structure 103 is 40 microns, and width is 60 micro-
Rice.Certainly, the size of the groove structure 103 can exceed scope recited herein, be not limited to this.
As an example, the material of the metal level 104 include layers of copper and aluminium lamination, the metallic film 105 include Copper Foil and
Aluminium foil, wherein, the metal level 104 is identical in the material category of the metallic film 105, in the present embodiment, the metal
The material of layer 104 and metallic film 105 is copper.
As described above, the present invention provides a kind of micro-nano structure closed conduct and preparation method thereof, the preparation method includes
Step：1) substrate 101 is provided, flexible material layer 102 is formed in the surface of the substrate 101, in the table of the flexible material layer 102
Face is formed with multiple groove structures 103；2) in the flexible material layer 102 and the forming metal layer on surface of each groove structure 103
104；3) metallic film 105 is provided, realizes the metallic film 105 with the metal level 104 using ultrasonic welding process
Face is welded with the fusion in face, forms multiple closed conducts 106.The invention has the advantages that：
1) deposited relative to silicon chip and be prepared micro/nano level sealing pipeline, present invention process letter with etching multi-layer framework
Single, equipment investment is low, product heat-resistant pressure-resistant, can select flexible parent metal, and product has pliability.
2) relative to extraordinary glue bonding metal film 105, good airproof performance of the present invention is more frivolous, extends service life.
3) ultrasonic bonding makes two processed metal levels carry out friction fusion in molecular level, and coverage is minimum, no
The dimensional accuracy of groove can be reduced.
4) widely used radiator is generally metal material at this stage, needs to add when electronic component is radiated
Plus an insulating barrier, and miniflow tube radiator prepared by the present invention is used, when being radiated to electronic device, simultaneously metal structure
Ensure that heat transfer enters micro-pipe, another side insulation ensures that influence will not be produced on the work of electronic device.
5) selection of product base material is various, different according to application and different, thermal transmission requirement is high, cost is allowed and without electric
In the case of insulating requirements, flexible parent metal can also be Copper Foil or aluminium foil etc., material is thus formed the structure of double-sided metal, open up
Range of application of the miniflow tube radiator in field of radiating is opened up.
So, the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
The personage for knowing this technology all can carry out modifications and changes under without prejudice to spirit and scope of the invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete with institute under technological thought without departing from disclosed spirit such as
Into all equivalent modifications or change, should be covered by claim of the invention.
Claims (12)
1. a kind of preparation method of micro-nano structure closed conduct, it is characterised in that at least comprise the following steps：
1) substrate is provided, flexible material layer is formed in the substrate surface, multiple is formed with the flexible material layer surface
Groove structure；
2) in the flexible material layer and the forming metal layer on surface of each groove structure；
3) metallic film is provided, realizes that the metallic film is molten with face with the metal level using ultrasonic welding process
Welding is closed, multiple closed conducts are formed.
2. the preparation method of micro-nano structure closed conduct according to claim 1, it is characterised in that：Step 1) including following
Step：
One substrate 1-1) is provided, flexible material layer is formed in the substrate surface；
1-2) providing a surface has the mould of bulge-structure, by the mould using the method for impressing in the flexible material layer
Surface is formed with multiple groove structures；
Or comprise the following steps：
One substrate 1-1) is provided, flexible material layer is formed in the substrate surface；
The mask layer with etching window 1-2) is formed in the flexible material layer surface, by the mask layer in the flexibility
Material surface etches multiple groove structures.
3. the preparation method of micro-nano structure closed conduct according to claim 1, it is characterised in that：Step 2) including following
Step：
2-1) Seed Layer is formed in the surface of flexible material layer and each groove structure；
2-2) by the method for plating or chemical plating in the Seed Layer forming metal layer on surface；
Or comprise the following steps：
Directly using sputtering method in the flexible material layer and the forming metal layer on surface of each groove structure.
4. the preparation method of micro-nano structure closed conduct according to claim 1, it is characterised in that：Step 3) in, use
The plumb joint of ultrasonic welding system applies pressure and welds the metallic film and gold of plumb joint contact area to the metallic film
Category layer, and continuous moving contact area finally makes full wafer metallic film form intermolecular fusion with the layer on surface of metal, with
Form multiple closed conducts.
5. the preparation method of micro-nano structure closed conduct according to claim 1, it is characterised in that：The substrate includes glass
One kind in glass substrate, ceramic bases, aluminium foil, Copper Foil, PET flexible substrates and PI flexible substrates.
6. the preparation method of micro-nano structure closed conduct according to claim 1, it is characterised in that：The material of the metal level
Material includes layers of copper and aluminium lamination, and the metallic film includes Copper Foil and aluminium foil.
7. a kind of micro-nano structure closed conduct, it is characterised in that：Including：
Substrate；
Flexible material layer, is incorporated into the substrate surface, and the flexible material layer surface is formed with multiple groove structures；
Metal level, is incorporated into the surface of the flexible material layer and each groove structure；
Metallic film, is incorporated into the metal level of the flexible material layer surface, and multiple closed conducts are combined into each groove structure.
8. micro-nano structure closed conduct according to claim 7, it is characterised in that：The metal level and the metallic film
Combination be by Ultrasonic welding processes formed surface molecular between fusion.
9. micro-nano structure closed conduct according to claim 7, it is characterised in that：The substrate includes substrate of glass, pottery
One kind in porcelain substrate, aluminium foil, Copper Foil, PET flexible substrates and PI flexible substrates.
10. micro-nano structure closed conduct according to claim 7, it is characterised in that：The flexible material layer is UV glue-lines
Or heat cure glue-line.
11. micro-nano structure closed conducts according to claim 7, it is characterised in that：The depth of the groove structure is 30
Micron~50 microns, width is not less than 50 microns.
12. micro-nano structure closed conducts according to claim 7, it is characterised in that：The material of the metal level includes copper
Layer and aluminium lamination, the metallic film include Copper Foil and aluminium foil.
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| CN113582125B (en) * | 2021-07-21 | 2023-06-06 | 深圳清华大学研究院 | Super-slip packaging device and packaging method thereof |
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