CN105369346A - Device used for czochralski method of highly arsenic-doped low-resistance silicon single crystals - Google Patents
Device used for czochralski method of highly arsenic-doped low-resistance silicon single crystals Download PDFInfo
- Publication number
- CN105369346A CN105369346A CN201510904680.4A CN201510904680A CN105369346A CN 105369346 A CN105369346 A CN 105369346A CN 201510904680 A CN201510904680 A CN 201510904680A CN 105369346 A CN105369346 A CN 105369346A
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- CN
- China
- Prior art keywords
- quartz
- quartz ring
- pipe
- ring
- arsenic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 14
- 239000010703 silicon Substances 0.000 title claims abstract description 14
- 239000013078 crystal Substances 0.000 title abstract description 9
- 238000000034 method Methods 0.000 title abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 85
- 239000010453 quartz Substances 0.000 claims abstract description 69
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 18
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims abstract description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 8
- 239000007788 liquid Substances 0.000 claims abstract description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 239000012535 impurity Substances 0.000 abstract description 6
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 229920001296 polysiloxane Polymers 0.000 abstract 1
- 230000000630 rising effect Effects 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to a device used for czochralski method of highly arsenic-doped low-resistance silicon single crystals. The device comprises a thermal shielding inner container, a thermal shielding outer container, a quartz pot, a carbon mat, a quartz ring, and a quartz ring guide pipe; the quartz ring is a conducting tube composed of a quartz pipe and a plurality of quartz ring gas guide tubes arranged on the quartz pipe, wherein the quartz pipe and the quartz ring gas guide tubes are obtained via quartz drawing; the quartz ring gas guide tubes are vertically bended relative to the quartz pipe; the thermal shielding inner container, the carbon mat, and the thermal shielding outer container are provided with through holes, wherein the number of the through holes is equal to the number of the quartz ring gas guide tubes; the quartz ring guide pipe is fixedly arranged in holes, and the distance from the outer walls of the quartz ring guide pipe to the internal walls of the quartz pot is controlled to be 20 to 100mm; and the quartz ring gas guide tubes are inserted into the quartz ring guide pipe, and are capable of sliding freely. In application process, arsenic is delivered into the quartz pipe, a lifting device arranged on a furnace cover is used for moving the quartz ring to be above the liquid surface of molten silicone in the quartz pot. The device is simple in structure; modification is convenient to realize; and volatilization rate of highly arsenic-doped impurities is capable of satisfying requirements of low resistance via rising and falling of the quartz ring.
Description
Technical field
The present invention relates to a kind of device of czochralski silicon monocrystal, particularly a kind of device of heavily doped arsenic low-resistance silicon monocrystalline.
Background technology
Vehicles Collected from Market gets more and more to the demand of 8 inches of vertical pulling heavily doped as silicon crystal of resistivity < 0.003 Ω .cm, and the heavily doped arsenic single crystal resistivity adopting vertical pulling method common process to draw is commonly < 0.004 Ω .cm, for meeting the demand of market to low resistance heavily doped as silicon crystal, resistivity must be reduced by special corresponding instrument.
Summary of the invention
In view of prior art Problems existing, the invention provides a kind of can in crystal pulling process continuously to solution in the arsenic impurities that volatilizees recompense, in oven cavity atmosphere, increase impurity concentration simultaneously, reduce the speed of solution diffusion, concrete technical scheme is, the device of a kind of vertical pulling heavily doped arsenic low-resistance silicon monocrystalline, comprise heat shielding inner bag, the outer courage of heat shielding, quartz pot, carbon felt, quartz ring, quartz ring guide pipe, it is characterized in that: quartz ring is the silica tube that draws out with high purity quartz and has several quartz ring airway conduction pipe thereon, and several quartz ring airway becomes vertical curve relative to silica tube, heat shielding inner bag, carbon felt, the outer courage of heat shielding there is the through hole identical with quartz ring airway quantity, quartz ring guide pipe is fixed in hole, make quartz ring guide pipe outer span quartz pot inwall 20-100mm, quartz ring airway inserts in quartz ring guide pipe and also can be free to slide, during use, arsenic is placed in silica tube, quartz ring oscilaltion is made in quartzy pot on melted silicon liquid level by the lifting gear installed on bell.
Technique effect of the present invention is, structure is simple, and transformation easily, by the oscilaltion of quartz ring, allows the rate of volatilization of heavily doped arsenic impurities can meet the requirement of low-resistance.
Accompanying drawing explanation
Fig. 1 is section of structure of the present invention.
Embodiment
Be described further according to example below, furnace pressure 90TORR, the pre-volume that head mixes time is at 600g.
As shown in Figure 1, the device of a kind of vertical pulling heavily doped arsenic low-resistance silicon monocrystalline, comprise heat shielding inner bag 1, the outer courage 2 of heat shielding, quartz pot 3, carbon felt 4, quartz ring 5, quartz ring guide pipe 6, quartz ring 5 is draw out a silica tube 5-1 with quartz and have the conduction pipe of several quartz ring airway 5-2 thereon, and several quartz ring airway 5-2 becomes vertical curve relative to silica tube 5-1, heat shielding inner bag 1, carbon felt 4, the outer courage 2 of heat shielding there is the through hole identical with quartz ring airway 5-2 quantity, quartz ring guide pipe 6 is fixed in hole, make quartz ring guide pipe 6 outer span quartz pot 3 inwall 20-100mm, quartz ring airway 5-2 inserts in quartz ring guide pipe 6 and also can be free to slide, during use, arsenic is placed in quartz, quartz ring oscilaltion 30-300mm on melted silicon liquid level in quartzy pot 3 is made by the lifting gear installed on bell, draw out resistivity and account for 80% of whole monocrystalline lower than the ratio of the heavily doped arsenic single crystal of low-resistance of 0.003 Ω .cm, .
Principle is, in the process that monocrystalline does not keep, device 5 is promoted and the cold zone in burner hearth, arsenic impurities is allowed not reach the temperature of volatilization, in normal crystal pulling process, the position of quartz ring is regulated, in quartz ring 5, arsenic is molten into gas, reduce quartz ring 5 height, utilize the pressure of its sublimation, arsenic is made to enter in melted silicon, regulate 5 under the impact of convection current, draw out the low-resistance heavily doped arsenic single crystal of resistivity lower than 0.003 Ω .cm, on the other hand because burner hearth has the circulation of argon gas, under the effect of arsenic impurities atmosphere, make argon gas flow out along quartzy pot 3 and outer courage 2 interstitial site of heat shielding, prevent argon gas from directly contacting with monocrystalline and cause disconnected bag.
Claims (1)
1. the device of a vertical pulling heavily doped arsenic low-resistance silicon monocrystalline, comprise heat shielding inner bag (1), the outer courage (2) of heat shielding, quartz pot (3), carbon felt (4), quartz ring (5), quartz ring guide pipe (6), it is characterized in that: quartz ring (5) is the silica tube (5-1) that draws out with high purity quartz and has several quartz ring airway (5-2) conduction pipe thereon, and the relative silica tube (5-1) of several quartz ring airway (5-2) becomes vertical curve, heat shielding inner bag (1), carbon felt (4), the outer courage (2) of heat shielding there is the through hole identical with quartz ring airway (5-2) quantity, quartz ring guide pipe (6) is fixed in hole, make quartz ring guide pipe (6) outer span quartz pot (3) inwall 20-100mm, quartz ring airway (5-2) inserts in quartz ring guide pipe (6) and also can be free to slide, during use, arsenic is placed in silica tube (5-1), quartz ring oscilaltion is made in quartzy pot (3) on melted silicon liquid level by the lifting gear installed on bell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510904680.4A CN105369346A (en) | 2015-12-09 | 2015-12-09 | Device used for czochralski method of highly arsenic-doped low-resistance silicon single crystals |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510904680.4A CN105369346A (en) | 2015-12-09 | 2015-12-09 | Device used for czochralski method of highly arsenic-doped low-resistance silicon single crystals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105369346A true CN105369346A (en) | 2016-03-02 |
Family
ID=55371960
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510904680.4A Pending CN105369346A (en) | 2015-12-09 | 2015-12-09 | Device used for czochralski method of highly arsenic-doped low-resistance silicon single crystals |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105369346A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107779946A (en) * | 2016-08-25 | 2018-03-09 | 上海新昇半导体科技有限公司 | Heat shielding component and single crystal pulling stove thermal field structure |
| JP2018070428A (en) * | 2016-11-01 | 2018-05-10 | 信越半導体株式会社 | Crystal pulling apparatus |
| CN113061987A (en) * | 2019-12-13 | 2021-07-02 | 硅电子股份公司 | Method and apparatus for producing silicon single crystal doped with n-type dopant |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1188821A (en) * | 1996-10-15 | 1998-07-29 | Memc电子材料有限公司 | Method and apparatus for controlling oxygen content in silicon wafer heavily doped with antimony or arsenic |
| JPH11343196A (en) * | 1998-06-01 | 1999-12-14 | Sumitomo Metal Ind Ltd | Single crystal growing equipment |
| CN1432075A (en) * | 2000-05-10 | 2003-07-23 | Memc电子材料有限公司 | Method and device for feeding arsenic dopant into silicon crystal growing process |
| CN1600905A (en) * | 2003-09-28 | 2005-03-30 | 北京有色金属研究总院 | Heavily doped method and doping equipment for developing silicon single-crystal straight pulled |
| JP2005247671A (en) * | 2004-03-08 | 2005-09-15 | Toshiba Ceramics Co Ltd | Single crystal pulling device |
| CN101548031A (en) * | 2006-09-01 | 2009-09-30 | 欧米帝克公司 | Crystal manufacturing |
| US20090314996A1 (en) * | 2006-07-20 | 2009-12-24 | Shinichi Kawazoe | Method of dopant injection, n-type silicon single-crystal, doping apparatus and pull-up device |
| CN101717993A (en) * | 2009-11-10 | 2010-06-02 | 天津市环欧半导体材料技术有限公司 | Doping method and doping device of pulling reincorporation antimony crystals |
| JP2010143777A (en) * | 2008-12-17 | 2010-07-01 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Apparatus for pulling silicon single crystal |
| CN102162124A (en) * | 2011-04-06 | 2011-08-24 | 天津市环欧半导体材料技术有限公司 | Method for improving axial resistivity uniformity of single crystal with heavily doped Ar |
| CN203307477U (en) * | 2013-05-20 | 2013-11-27 | 洛阳单晶硅有限责任公司 | Integrated gas phase doping device |
| CN203307476U (en) * | 2013-05-20 | 2013-11-27 | 洛阳单晶硅有限责任公司 | Liquid-phase doping device for closed heating system |
| CN203474956U (en) * | 2013-08-30 | 2014-03-12 | 宁晋赛美港龙电子材料有限公司 | Volatilizer device used for arsenic impurity heavy doping of mono-crystal furnace |
| KR101509343B1 (en) * | 2013-10-08 | 2015-04-07 | 주식회사 엘지실트론 | Doping Tool and Doping Method for Single Crystal Growth |
-
2015
- 2015-12-09 CN CN201510904680.4A patent/CN105369346A/en active Pending
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1188821A (en) * | 1996-10-15 | 1998-07-29 | Memc电子材料有限公司 | Method and apparatus for controlling oxygen content in silicon wafer heavily doped with antimony or arsenic |
| JPH11343196A (en) * | 1998-06-01 | 1999-12-14 | Sumitomo Metal Ind Ltd | Single crystal growing equipment |
| CN1432075A (en) * | 2000-05-10 | 2003-07-23 | Memc电子材料有限公司 | Method and device for feeding arsenic dopant into silicon crystal growing process |
| CN1600905A (en) * | 2003-09-28 | 2005-03-30 | 北京有色金属研究总院 | Heavily doped method and doping equipment for developing silicon single-crystal straight pulled |
| JP2005247671A (en) * | 2004-03-08 | 2005-09-15 | Toshiba Ceramics Co Ltd | Single crystal pulling device |
| US20090314996A1 (en) * | 2006-07-20 | 2009-12-24 | Shinichi Kawazoe | Method of dopant injection, n-type silicon single-crystal, doping apparatus and pull-up device |
| CN101548031A (en) * | 2006-09-01 | 2009-09-30 | 欧米帝克公司 | Crystal manufacturing |
| JP2010143777A (en) * | 2008-12-17 | 2010-07-01 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Apparatus for pulling silicon single crystal |
| CN101717993A (en) * | 2009-11-10 | 2010-06-02 | 天津市环欧半导体材料技术有限公司 | Doping method and doping device of pulling reincorporation antimony crystals |
| CN102162124A (en) * | 2011-04-06 | 2011-08-24 | 天津市环欧半导体材料技术有限公司 | Method for improving axial resistivity uniformity of single crystal with heavily doped Ar |
| CN203307477U (en) * | 2013-05-20 | 2013-11-27 | 洛阳单晶硅有限责任公司 | Integrated gas phase doping device |
| CN203307476U (en) * | 2013-05-20 | 2013-11-27 | 洛阳单晶硅有限责任公司 | Liquid-phase doping device for closed heating system |
| CN203474956U (en) * | 2013-08-30 | 2014-03-12 | 宁晋赛美港龙电子材料有限公司 | Volatilizer device used for arsenic impurity heavy doping of mono-crystal furnace |
| KR101509343B1 (en) * | 2013-10-08 | 2015-04-07 | 주식회사 엘지실트론 | Doping Tool and Doping Method for Single Crystal Growth |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107779946A (en) * | 2016-08-25 | 2018-03-09 | 上海新昇半导体科技有限公司 | Heat shielding component and single crystal pulling stove thermal field structure |
| JP2018070428A (en) * | 2016-11-01 | 2018-05-10 | 信越半導体株式会社 | Crystal pulling apparatus |
| WO2018083899A1 (en) * | 2016-11-01 | 2018-05-11 | 信越半導体株式会社 | Single crystal pull-up device |
| CN109923248A (en) * | 2016-11-01 | 2019-06-21 | 信越半导体株式会社 | Single crystal pulling apparatus |
| US20200048789A1 (en) * | 2016-11-01 | 2020-02-13 | Shin-Etsu Handotai Co., Ltd. | Single crystal pulling apparatus |
| US11028498B2 (en) | 2016-11-01 | 2021-06-08 | Shin-Etsu Handotai Co., Ltd. | Single crystal pulling apparatus including a dopant supplying means having a tube with a plurality of blowing ports |
| CN113061987A (en) * | 2019-12-13 | 2021-07-02 | 硅电子股份公司 | Method and apparatus for producing silicon single crystal doped with n-type dopant |
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|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
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| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160302 |