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CN105470369B - Low-power L ED lamp with micro-grid structure and preparation method of graphene film of low-power L ED lamp - Google Patents

Low-power L ED lamp with micro-grid structure and preparation method of graphene film of low-power L ED lamp Download PDF

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CN105470369B
CN105470369B CN201510803880.0A CN201510803880A CN105470369B CN 105470369 B CN105470369 B CN 105470369B CN 201510803880 A CN201510803880 A CN 201510803880A CN 105470369 B CN105470369 B CN 105470369B
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power led
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CN105470369A (en
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蒋富裕
郑力源
黄开涛
孙小虎
王娟
赵小勇
刘丹
刘光明
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Guangdong Tsaint Hi Tech Co ltd
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    • HELECTRICITY
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    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8514Wavelength conversion means characterised by their shape, e.g. plate or foil
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • H10H20/856Reflecting means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/858Means for heat extraction or cooling
    • H10H20/8581Means for heat extraction or cooling characterised by their material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/858Means for heat extraction or cooling
    • H10H20/8585Means for heat extraction or cooling being an interconnection
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0364Manufacture or treatment of packages of interconnections

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Abstract

本发明公开了一种微电网结构的低功率LED灯及其石墨烯膜的制备方法,包括散热层、反光层、驱动块、缓冲腔和LED灯珠层,所述散热层呈圆锥形结构,所述散热层锥形部分紧贴有反光层,所述反光层上端设置有驱动块,所述驱动块与散热层顶端齐平,所述反光层外侧依次设置有缓冲腔、石墨烯膜、LED灯珠层和导光层,所述导光层外边缘与驱动块的外边缘相连接。本发明充分利用石墨烯的均匀导电,扩散晶粒的反射效果与荧光珠的导光层之间的组合能够保证以最小功率带来最大的照明亮度。

The present invention discloses a low-power LED lamp with a microgrid structure and a preparation method of a graphene film thereof, comprising a heat dissipation layer, a reflective layer, a driving block, a buffer cavity and an LED lamp bead layer, wherein the heat dissipation layer is in a conical structure, the conical part of the heat dissipation layer is closely attached to the reflective layer, the upper end of the reflective layer is provided with a driving block, the driving block is flush with the top of the heat dissipation layer, the outer side of the reflective layer is provided with a buffer cavity, a graphene film, an LED lamp bead layer and a light guide layer in sequence, and the outer edge of the light guide layer is connected to the outer edge of the driving block. The present invention makes full use of the uniform conductivity of graphene, and the combination of the reflection effect of the diffusion grains and the light guide layer of the fluorescent beads can ensure the maximum lighting brightness with the minimum power.

Description

一种微电网结构的低功率LED灯及其石墨烯膜的制备方法A low-power LED lamp with micro-grid structure and preparation method of graphene film thereof

技术领域technical field

本发明属于LED技术领域,具体涉及一种微电网结构的低功率LED灯及其石墨烯膜的制备方法。The invention belongs to the technical field of LEDs, and in particular relates to a low-power LED lamp with a microgrid structure and a preparation method for a graphene film thereof.

背景技术Background technique

LED(LightingEmittingDiode)照明即是发光二极管照明,是一种半导体固体发光器件。它是利用固体半导体芯片作为发光材料,在半导体中通过载流子发生复合放出过剩的能量而引起光子发射,直接发出红、黄、蓝、绿色的光,在此基础上,利用三基色原理,添加荧光粉,可以发出红、黄、蓝、绿、青、橙、紫、白色等任意颜色的光。LED灯具就是利用LED作为光源制造出来的照明器具。LED (LightingEmittingDiode) lighting is light-emitting diode lighting, which is a semiconductor solid-state light-emitting device. It uses a solid semiconductor chip as a light-emitting material. In the semiconductor, the excess energy is released through the recombination of carriers to cause photon emission, and directly emits red, yellow, blue, and green light. On this basis, using the principle of three primary colors, Adding fluorescent powder can emit light of any color such as red, yellow, blue, green, blue, orange, purple, white, etc. LED lamps are lighting fixtures that use LEDs as light sources.

LED照明灯具里,底灯,吊灯,投射灯等装饰用,反射用途的LED照明灯具可以完全胜任于任何场合,包括美术馆,博物馆等对颜色度要求较高的场所。但是对于商场,写字楼等大规模设施来说,作为大范围照明的LED灯具虽然已经诞生,但是其指向性(LED芯片发出的光是直线,发散性不好)太高,造成大面积内设计平均的照度很困难。灯管型LED照明灯具排列过密,设计成本过高,失去节能效果。因此,现阶段装饰用途场合,LED照明灯具完全可用,大面积室内照明还不成熟。Among LED lighting fixtures, bottom lights, chandeliers, projection lights and other decorative and reflective LED lighting fixtures can be fully qualified for any occasion, including art galleries, museums and other places with high color requirements. However, for large-scale facilities such as shopping malls and office buildings, although LED lamps for large-scale lighting have been born, their directivity (the light emitted by the LED chip is a straight line and the divergence is not good) is too high, resulting in average design in a large area. The illuminance is very difficult. Tube-type LED lighting fixtures are arranged too densely, the design cost is too high, and the energy-saving effect is lost. Therefore, LED lighting fixtures are fully available for decorative purposes at this stage, and large-area indoor lighting is not yet mature.

随着LED的市场不断开阔,LED的使用低功率得到了大部分的肯定,随着使用量的增加以及使用效果的多样化,光线明暗的调节度等,LED的功率,灯光都遇到了设计研究的瓶颈,只有打破僵局才能有进一步的方法。通过长期使用的综合评述,目前LED灯的追求方向还是有以下几点:1、LED的功率降低,整体功率的降低才能加载更多灯具;2、LED灯的舞美效果;3、LED灯的散热效果。As the LED market continues to expand, the use of low-power LEDs has been mostly affirmed. With the increase in usage and the diversification of use effects, the adjustment of light and shade, LED power and lighting have encountered design research. bottleneck, only by breaking the deadlock can there be further methods. Through the comprehensive review of long-term use, the current pursuit of LED lights still has the following points: 1. The power of LEDs is reduced, and the reduction of the overall power can load more lamps; 2. The stage effect of LED lights; 3. The heat dissipation of LED lights Effect.

发明内容Contents of the invention

本发明的目的是提供一种微电网结构的低功率LED灯及其石墨烯膜的制备方法,本发明充分利用石墨烯的均匀导电,扩散晶粒的反射效果与荧光珠的导光层之间的组合能够保证以最小功率带来最大的照明亮度。The purpose of the present invention is to provide a low-power LED lamp with a microgrid structure and a method for preparing the graphene film thereof. The combination can guarantee the maximum lighting brightness with the minimum power.

一种微电网结构的低功率LED灯,包括散热层、反光层、驱动块、缓冲腔和LED灯珠层,所述散热层呈圆锥形结构,所述散热层锥形部分紧贴有反光层,所述反光层上端设置有驱动块,所述驱动块与散热层顶端齐平,所述反光层外侧依次设置有缓冲腔、石墨烯膜、LED灯珠层和导光层,所述导光层外边缘与驱动块的外边缘相连接。A low-power LED lamp with a micro-grid structure, including a heat dissipation layer, a reflective layer, a drive block, a buffer cavity and an LED lamp bead layer, the heat dissipation layer is in a conical structure, and the conical part of the heat dissipation layer is closely attached to the light reflection layer , the upper end of the reflective layer is provided with a drive block, the drive block is flush with the top of the heat dissipation layer, and the outer side of the reflective layer is sequentially provided with a buffer cavity, a graphene film, an LED lamp bead layer and a light guide layer, and the light guide layer The outer edge of the layer is connected to the outer edge of the driver block.

所述导光层内设置有荧光珠,所述荧光珠呈球形,粒径不大于1mm。Fluorescent beads are arranged in the light guide layer, and the fluorescent beads are spherical in shape with a particle diameter not greater than 1mm.

所述导光层采用高透亚克力 有机玻璃,所述导光层厚度不大于5mm。The light guide layer is made of high-transparency acrylic plexiglass, and the thickness of the light guide layer is not more than 5mm.

所述反光层外表面设置有扩散晶粒,所述扩散晶粒不大于1mm。Diffusion grains are provided on the outer surface of the reflective layer, and the diffusion grains are not larger than 1mm.

所述石墨烯膜的厚度不大于300微米。The thickness of the graphene film is not greater than 300 microns.

一种微电网结构的低功率LED灯的石墨烯膜的制备方法如下:The preparation method of the graphene film of the low-power LED lamp of a kind of micro-grid structure is as follows:

(1)氧化石墨烯溶胶的制备:将氧化石墨烯研磨成粒径为1-40微米的细粉,并与溶剂配制成浓度为0.5-6mg/ml的悬浮液,超声处理10-120分钟后,除去悬浮液中的不稳定杂质,得到氧化石墨烯溶胶;(1) Preparation of graphene oxide sol: grind graphene oxide into a fine powder with a particle size of 1-40 microns, and prepare a suspension with a concentration of 0.5-6 mg/ml with a solvent, and ultrasonically treat it for 10-120 minutes , removing unstable impurities in the suspension to obtain graphene oxide sol;

(2)无支撑氧化石墨烯薄膜的制备:将步骤(1)制备的氧化石墨烯溶胶加热至30-100℃,经过10-200分钟,在溶胶液面形成薄膜,将薄膜从液面取出,并在50-150℃温度下真空干燥,得到无支撑氧化石墨烯薄膜。(2) Preparation of unsupported graphene oxide film: the graphene oxide sol prepared in step (1) is heated to 30-100° C., and after 10-200 minutes, a film is formed on the liquid surface of the sol, and the film is taken out from the liquid surface. and vacuum drying at a temperature of 50-150° C. to obtain an unsupported graphene oxide film.

所述溶剂采用乙醇、丙酮或水的一种或几种。The solvent is one or more of ethanol, acetone or water.

所述除去悬浮液中的不稳定杂质所用的方式为离子交换、过滤、自由沉降或离心分离。The method used to remove unstable impurities in the suspension is ion exchange, filtration, free sedimentation or centrifugation.

与现有技术相比,本发明具有以下有益效果:本发明提供的LED灯采用石墨烯膜作为导电微网膜,表面加载LED灯珠,成分利用石墨烯膜良好的导电性能以及低电阻率、高散热效果,同时对LED灯供电,效率均匀;采用反光层与扩散晶粒的设置有助于将LED灯的光线进行反射,达到充分利用光源的效果,大大降低了功率需求;采用带有荧光珠的导光层,能够充分将光线打散,防止炫目;内部设置散热层,具有良好的散热效果,保证电路材料的使用寿命;本发明提供的石墨烯导电膜的制作方法,简单快速,效果好,配置方便,且原料来源广泛。Compared with the prior art, the present invention has the following beneficial effects: the LED lamp provided by the present invention uses a graphene film as a conductive micro-network film, and the surface is loaded with LED lamp beads, and the composition utilizes the good electrical conductivity and low resistivity of the graphene film, High heat dissipation effect, while supplying power to the LED lamp, the efficiency is uniform; the setting of the reflective layer and the diffusion grain helps to reflect the light of the LED lamp, so as to achieve the effect of making full use of the light source and greatly reducing the power demand; The light guide layer of the beads can fully disperse the light and prevent glare; the heat dissipation layer is arranged inside, which has a good heat dissipation effect and ensures the service life of the circuit material; the manufacturing method of the graphene conductive film provided by the invention is simple and fast, and the effect Well, it is easy to configure and has a wide range of sources of raw materials.

附图说明Description of drawings

图1是本发明的结构示意图;Fig. 1 is a structural representation of the present invention;

附图标记说明:Explanation of reference signs:

1、散热层;2、反光层;3、驱动块;4、缓冲腔;5、导光层;6、石墨烯膜;7、LED灯珠层;8、荧光珠;9、扩散晶粒。1. Heat dissipation layer; 2. Reflective layer; 3. Drive block; 4. Buffer cavity; 5. Light guide layer; 6. Graphene film; 7. LED lamp bead layer; 8. Fluorescent beads; 9. Diffusion grains.

具体实施方式detailed description

下面结合实施例对本发明做进一步描述:The present invention will be further described below in conjunction with embodiment:

实施例1Example 1

一种微电网结构的低功率LED灯,包括散热层1、反光层2、驱动块3、缓冲腔4和LED灯珠层7,所述散热层1呈圆锥形结构,所述散热层1锥形部分紧贴有反光层2,所述反光层2上端设置有驱动块3,所述驱动块3与散热层1顶端齐平,所述反光层2外侧依次设置有缓冲腔4、石墨烯膜6、LED灯珠层7和导光层5,所述导光层5外边缘与驱动块3的外边缘相连接。A low-power LED lamp with a micro-grid structure, comprising a heat dissipation layer 1, a reflective layer 2, a drive block 3, a buffer cavity 4 and an LED lamp bead layer 7, the heat dissipation layer 1 is in a conical structure, and the heat dissipation layer 1 is conical The shaped part is closely attached to a reflective layer 2, the upper end of the reflective layer 2 is provided with a driving block 3, and the driving block 3 is flush with the top of the heat dissipation layer 1, and the outer side of the reflective layer 2 is sequentially provided with a buffer cavity 4 and a graphene film. 6. The LED bead layer 7 and the light guide layer 5 , the outer edge of the light guide layer 5 is connected to the outer edge of the driving block 3 .

所述导光层5内设置有荧光珠8,所述荧光珠8呈球形,粒径不大于1mm。Fluorescent beads 8 are arranged in the light guide layer 5, and the fluorescent beads 8 are spherical in shape, and the particle diameter is not greater than 1 mm.

所述导光层5采用高透亚克力 有机玻璃,所述导光层5厚度不大于5mm。The light guide layer 5 adopts high-transparency acrylic plexiglass, and the thickness of the light guide layer 5 is not more than 5mm.

所述反光层2外表面设置有扩散晶粒9,所述扩散晶粒9不大于1mm。Diffusion grains 9 are provided on the outer surface of the reflective layer 2, and the diffusion grains 9 are not larger than 1 mm.

所述石墨烯膜6的厚度不大于300微米。The thickness of the graphene film 6 is not greater than 300 microns.

实施例2Example 2

一种微电网结构的低功率LED灯的石墨烯膜的制备方法如下:The preparation method of the graphene film of the low-power LED lamp of a kind of micro-grid structure is as follows:

(1)氧化石墨烯溶胶的制备:将氧化石墨烯研磨成粒径为1-40微米的细粉,并与溶剂配制成浓度为0.5-6mg/ml的悬浮液,超声处理10-120分钟后,除去悬浮液中的不稳定杂质,得到氧化石墨烯溶胶;(1) Preparation of graphene oxide sol: grind graphene oxide into a fine powder with a particle size of 1-40 microns, and prepare a suspension with a concentration of 0.5-6 mg/ml with a solvent, and ultrasonically treat it for 10-120 minutes , removing unstable impurities in the suspension to obtain graphene oxide sol;

(2)无支撑氧化石墨烯薄膜的制备:将步骤(1)制备的氧化石墨烯溶胶加热至30-100℃,经过10-200分钟,在溶胶液面形成薄膜,将薄膜从液面取出,并在50-150℃温度下真空干燥,得到无支撑氧化石墨烯薄膜。(2) Preparation of unsupported graphene oxide film: the graphene oxide sol prepared in step (1) is heated to 30-100° C., and after 10-200 minutes, a film is formed on the liquid surface of the sol, and the film is taken out from the liquid surface. and vacuum drying at a temperature of 50-150° C. to obtain an unsupported graphene oxide film.

所述溶剂采用乙醇、丙酮或水的一种或几种。The solvent is one or more of ethanol, acetone or water.

所述除去悬浮液中的不稳定杂质所用的方式为离子交换、过滤、自由沉降或离心分离。The method used to remove unstable impurities in the suspension is ion exchange, filtration, free sedimentation or centrifugation.

以上所述仅为本发明的一个实施例,并不限制本发明,凡采用等同替换或等效变换的方式所获得的技术方案,均落在本发明的保护范围内。The above description is only an embodiment of the present invention, and does not limit the present invention. All technical solutions obtained by means of equivalent replacement or equivalent transformation fall within the protection scope of the present invention.

Claims (8)

1. a kind of low-power LED of micro-capacitance sensor structure, it is characterised in that it includes heat dissipating layer (1), reflector layer (2), drive block (3), cushion chamber (4) and LED lamp bead layer (7), the heat dissipating layer (1) are in conical structure, and heat dissipating layer (1) conical section is tight Reflector layer (2) is posted, reflector layer (2) upper end is provided with drive block (3), and the drive block (3) and heat dissipating layer (1) top are neat Flat, the reflector layer (2) has been orderly arranged outside each cushion chamber (4), graphene film (6), LED lamp bead layer (7) and optical waveguide layer (5), Optical waveguide layer (5) outward flange is connected with the outward flange of drive block (3).
A kind of 2. low-power LED of micro-capacitance sensor structure according to claim 1, it is characterised in that the optical waveguide layer (5) Fluorescent bead (8) is inside provided with, the fluorescent bead (8) is spherical in shape, and particle diameter is not more than 1mm.
A kind of 3. low-power LED of micro-capacitance sensor structure according to claim 1, it is characterised in that the optical waveguide layer (5) 5mm is not more than using high acrylic lucite, optical waveguide layer (5) thickness thoroughly.
A kind of 4. low-power LED of micro-capacitance sensor structure according to claim 1, it is characterised in that the reflector layer (2) Outer surface is provided with diffusion crystal grain (9), and the diffusion crystal grain (9) is not more than 1mm.
A kind of 5. low-power LED of micro-capacitance sensor structure according to claim 1, it is characterised in that the graphene film (6) thickness is not more than 300 microns.
A kind of 6. low-power LED of micro-capacitance sensor structure according to claim 1, it is characterised in that the graphene film Preparation method it is as follows:
(1) preparation of graphene oxide colloidal sol:Graphene oxide is ground into particle diameter and is the fine powder of 1-40 microns, and is matched somebody with somebody with solvent The suspension that concentration is 0.5-6mg/ml is made, after being ultrasonically treated 10-120 minutes, removes the unstable impurity in suspension, obtains To graphene oxide colloidal sol;
(2) preparation without support graphene oxide film:Graphene oxide colloidal sol prepared by step (1) is heated to 30-100 DEG C, by 10-200 minutes, film is formed in colloidal sol liquid level, film is taken out from liquid level, and the vacuum at a temperature of 50-150 DEG C Dry, obtain without support graphene oxide film.
7. the low-power LED of a kind of micro-capacitance sensor structure according to claim 6, it is characterised in that the solvent uses The one or more of ethanol, acetone or water.
8. the low-power LED of a kind of micro-capacitance sensor structure according to claim 6, it is characterised in that described remove suspends The mode used in unstable impurity in liquid is ion exchange, filtering, free settling or centrifugation.
CN201510803880.0A 2015-11-20 2015-11-20 Low-power L ED lamp with micro-grid structure and preparation method of graphene film of low-power L ED lamp Active CN105470369B (en)

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CN102694093A (en) * 2012-06-19 2012-09-26 中国科学院半导体研究所 Method for manufacturing micro-nano pyramid gallium nitride based light-emitting diode array with vertical structure
CN102903838A (en) * 2012-07-10 2013-01-30 贵州大学 Packaged LED light source with heat dissipation structure and preparation method thereof
TW201445082A (en) * 2013-05-29 2014-12-01 Genesis Photonics Inc Illuminating device

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CN102138230A (en) * 2008-09-01 2011-07-27 欧司朗光电半导体有限公司 Optoelectronic devices
CN102694093A (en) * 2012-06-19 2012-09-26 中国科学院半导体研究所 Method for manufacturing micro-nano pyramid gallium nitride based light-emitting diode array with vertical structure
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