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CN105509937B - A kind of pressure sensor, pressure detection method and manufacturing process - Google Patents

A kind of pressure sensor, pressure detection method and manufacturing process Download PDF

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Publication number
CN105509937B
CN105509937B CN201610008817.2A CN201610008817A CN105509937B CN 105509937 B CN105509937 B CN 105509937B CN 201610008817 A CN201610008817 A CN 201610008817A CN 105509937 B CN105509937 B CN 105509937B
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China
Prior art keywords
circuit layer
substrate
circuit
ontology
lower substrate
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CN201610008817.2A
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CN105509937A (en
Inventor
金虎
尉长虹
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Changzhou Two-Dimension Photoelectric Technology Co Ltd
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Changzhou Two-Dimension Photoelectric Technology Co Ltd
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Priority to CN201610008817.2A priority Critical patent/CN105509937B/en
Publication of CN105509937A publication Critical patent/CN105509937A/en
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/20Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/225Measuring circuits therefor
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/20Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2287Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
    • G01L1/2293Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Force Measurement Appropriate To Specific Purposes (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

The invention discloses a kind of pressure sensor, pressure detection method and manufacturing process, pressure sensor includes upper substrate, lower substrate, ontology circuit layer and extraction electrode;The upper substrate and lower substrate are elastic organic material, and one side is identical stereochemical structure, and has being oppositely arranged on one side for stereochemical structure;The ontology circuit layer is flexibility, conductive material is arranged thereon, conductive circuit layer is made;The ontology circuit layer is folded between substrate and lower substrate, is covered in the stereochemical structure of upper substrate and lower substrate by flat functional circuitous pattern structure, and distinguishes extraction electrode at the both ends of ontology circuit layer.The present invention generates the change of substrate solid type by being applied to the strength on the flexible substrates surface of sensor, substrate solid type, which becomes while being located at the three-dimensional circuit structure in substrate, forms solid type change, to form resistance variations, pressure value is calculated according to resistance variations, structure is simple, measurement result is accurate, and high sensitivity.

Description

A kind of pressure sensor, pressure detection method and manufacturing process
Technical field
The present invention relates to a kind of pressure sensor, pressure detection method and manufacturing process.
Background technique
Pressure sensor is widely used in intelligence manufacture industry, but existing pressure sensor, senses mode and inside Structure is excessively complicated, needs far more precise electronic control system, and production cost is excessively high, and size thickness etc. is all very limited System, can not make ultra-thin pressure sensor, and sensitivity is also extremely limited, and accurate slight pressure can not be measured accurately.
Summary of the invention
The first purpose of the invention is to provide a kind of pressure sensors of energy Sensitive Detection slight pressure.
The technical solution for realizing first purpose of the invention is a kind of pressure sensor, including upper substrate, lower substrate, ontology Circuit layer and extraction electrode;The upper substrate and lower substrate are elastic organic material, and one side is identical stereochemical structure, and is had Stereochemical structure is oppositely arranged on one side;The ontology circuit layer is flexibility, conductive material is arranged thereon, conductive circuit layer is made;Institute Ontology circuit layer is stated to be folded between substrate and lower substrate, uniform fold in the stereochemical structure of upper substrate and lower substrate, and Extraction electrode is distinguished at the both ends of ontology circuit layer.
The section of the upper substrate and the stereochemical structure in lower substrate is continuous V-arrangement;Or section is continuous U-shaped; Or section is continuous sinusoidal waveform;Or stereochemical structure is equally distributed triangular pyramid;Or stereochemical structure is uniformly to divide The identical sphere stereoscopic structure of the size of cloth;Or the combination of aforementioned stereochemical structure;Aforementioned stereochemical structure is set according to functional requirement Count into the continuous structure that size is identical or size is different.
The elasticity modulus of the upper substrate and lower substrate be 0.002~0.05Gpa, Poisson's ratio be 0.1~1, with a thickness of for 0.02~5mm.
The conductive circuit layer of the ontology circuit layer is graphene conductive route;Or carbon nanotube carbon-based conductive route; Or metal conductive oxide route;Or metal and carbon-based composite conducting route;Or organic conductive material conducting wire;Or The composite conducting route of person's organic conductive material and carbon-based material;Or organic conductive material and metal composite conducting wire.
The extraction electrode is that the carbon-based conductive electrode of elasticity or metal electrode or FPC electrode or the plating of organic group bottom are led The electrode of electrolemma.
The conducting wire of the ontology circuit layer include power supply signal circuit, signal acquisition circuit, D/A converting circuit, MCU governor circuit and signal output apparatus;The power supply signal circuit is the power supply of MCU governor circuit, is provided for pressure sensor Signal source;The signal acquisition circuit acquires main body circuit deformation bring resistance change;The D/A converting circuit is to letter The data of number Acquisition Circuit acquisition carry out digital-to-analogue conversion, which is transmitted to MCU governor circuit and is analyzed, and analysis result passes through Signal output apparatus, which exports, gives terminal device master control.
A second object of the present invention is to provide a kind of manufacturing methods for manufacturing pressure sensor.
The technical solution for realizing second purpose of the invention is a kind of manufacturing method of pressure sensor, including following step It is rapid:
Step 1: lower substrate is made;It uses the film of required stereochemical structure for mold, elastic organic material is filled into Die for molding is to have the substrate with a thickness of 0.02~5mm of stereochemical structure on one side;
Step 2: ontology circuit layer flexible is made;
Step 3: ontology circuit layer is transferred in lower substrate;
Step 4: in ontology circuit layer both ends extraction electrode;
Step 5: upper substrate is made using the same method of step 1, upper substrate is covered on ontology circuit layer;Or Elastic organic material, substrate in formation are covered on ontology circuit layer;The electrode section exposes pressure sensor.
Transfer method in the step 3 are as follows: fish out the ontology circuit layer for having etched conductive circuit layer floating in the solution It takes and is placed in lower substrate;Or it is transferred in lower substrate using double-sided adhesive;Or lower substrate is transferred to using water-based glue On.
In the step 4, electrode is made using the method for conductive glue bond or coating;In the step 5, in ontology The method that elastic organic material is covered on circuit layer is using spraying or roller coating or spin coating or printing or side for dispensing glue Method forms the elastic substrates of 0.02~5mm thickness;Hardness number is 0~20 degree.
Third object of the present invention is to provide a kind of pressure detection methods of pressure sensor for detecting slight pressure.
The technical solution for realizing third object of the present invention is a kind of pressure detection method of pressure sensor, power supply letter Number circuit loads constant pressure or constant current or square-wave signal source to sensor;After sensor is under pressure, main body circuit layer deformation is described Signal acquisition circuit acquires main body circuit layer deformation bring resistance change;The D/A converting circuit is to signal acquisition circuit The data of acquisition carry out digital-to-analogue conversion, which is transmitted to MCU governor circuit and is analyzed, and calculate change in resistance amount, according to base The material characteristic parameter that bottom material type becomes is calibrated to obtain pressure value by normal pressure, and pressure value is defeated by signal output apparatus Terminal device master control is given out.
After above-mentioned technical proposal, the present invention has the effect of following positive: (1) present invention is by being applied to sensing The strength on the flexible substrates surface of device generates substrate solid type and becomes, and substrate solid type becomes while being located at the three-dimensional circuit in substrate Structure forms three-dimensional deformation, to form resistance variations, the electricity of constant current or constant pressure or square wave or other waveforms is loaded by electrode Source, resistance change can be obtained by measuring current change quantity or voltage variety, by the elasticity modulus characteristic for calculating material With the type variable of calibration unit resistance variable quantity, the pressure value received can be calculated, structure is simple, and measurement result is accurate, and And high sensitivity.
(2) present invention is available by adjusting the stereochemical structure of ontology circuit and the characteristic and thickness structure of substrate The sensor of different pressures resolution ratio.
(3) a preferred embodiment of the present invention is ontology circuit using graphene film, is conducted electricity very well, thickness is very It is thin, therefore available ultra-thin pressure sensor, and graphene is very high to the sensitivity of pressure, point of pressure sensor Resolution can measure the pressure of 0.01g~200KG, realize the detection to small pressure.
Detailed description of the invention
In order that the present invention can be more clearly and readily understood, right below according to specific embodiment and in conjunction with attached drawing The present invention is described in further detail, wherein
Fig. 1 is the structural diagram of the present invention.
Fig. 2 is the structural schematic diagram of deformation after present invention pressing.
Fig. 3 is the circuit diagram of ontology circuit layer.
Numbering in the drawing are as follows:
Upper substrate 1, lower substrate 2, ontology circuit layer 3, power supply signal circuit 31, signal acquisition circuit 32, digital-to-analogue conversion electricity Road 33, MCU governor circuit 34, signal output apparatus 35, extraction electrode 4, terminal device master control 5.
Specific embodiment
(embodiment 1)
See Fig. 1, a kind of pressure sensor of the present embodiment, including upper substrate 1, lower substrate 2, ontology circuit layer 3 and extraction Electrode 4;Upper substrate 1 and lower substrate 2 are elastic organic material, and one side is identical stereochemical structure, and has the one of stereochemical structure Face is oppositely arranged;Ontology circuit layer 3 is flexibility, conductive material is arranged thereon, conductive circuit layer is made;Ontology circuit layer 3 is folded in Between upper substrate 1 and lower substrate 2, uniform fold is in the stereochemical structure of upper substrate 1 and lower substrate 2, and in ontology circuit layer 3 Distinguish extraction electrode 4 in both ends.Upper substrate 1 and the section of the stereochemical structure in lower substrate 2 are the identical V-arrangement of continuous size;Or Person section is the identical U-shaped of continuous size;Or section is the identical sinusoidal waveform of continuous size;Or stereochemical structure is The identical triangular pyramid of equally distributed size;Say that stereochemical structure is the identical spherical surface of equally distributed size.Upper substrate 1 is under The elasticity modulus of substrate 2 is 0.002~0.05Gpa, and Poisson's ratio is 0.1~1, with a thickness of being 0.02~5mm, hardness number for 0~ 20 degree.The conductive circuit layer of ontology circuit layer 3 is graphene conductive route;Or carbon nanotube carbon-based conductive route;Or gold Belong to oxide conducting route;Or metal and carbon-based composite conducting route;Or organic conductive material conducting wire;Or it is organic The composite conducting route of conductive material and carbon-based material;Or organic conductive material and metal composite conducting wire.Extraction electrode 4 The electrode of conductive film is plated for the carbon-based conductive electrode of elasticity or metal electrode or FPC electrode or organic group bottom.
See Fig. 3, the conducting wire of ontology circuit layer 3 includes power supply signal circuit 31, signal acquisition circuit 32, digital-to-analogue conversion Circuit 33, MCU governor circuit 34 and signal output apparatus 35;Power supply signal circuit 31 is the power supply of MCU governor circuit 34, is pressure sensitivity Sensor provides signal source;Signal acquisition circuit 32 acquires 3 deformation bring resistance change of main body circuit;D/A converting circuit The data that 33 pairs of signal acquisition circuits 32 acquire carry out digital-to-analogue conversion, which is transmitted to MCU governor circuit 34 and is analyzed, point Result is analysed to export by signal output apparatus 35 to terminal device master control 5.Power supply signal circuit 31 to sensor load constant pressure or Constant current or square-wave signal source;Sensor be under pressure after (as shown in Fig. 2, finger pressing), 3 deformation of main body circuit layer, signal is adopted Collector 32 acquires 3 deformation bring resistance change of main body circuit layer;D/A converting circuit 33 adopts signal acquisition circuit 32 The data of collection carry out digital-to-analogue conversion, which is transmitted to MCU governor circuit 34 and is analyzed, and calculate change in resistance amount, according to base The material characteristic parameter that bottom material type becomes is calibrated to obtain pressure value by normal pressure, and pressure value passes through signal output apparatus 35 It exports to terminal device master control 5.
The manufacturing method of pressure sensor, comprising the following steps:
Step 1: lower substrate 2 is made;It uses the film of required stereochemical structure for mold, elastic organic material is perfused It is to have the substrate with a thickness of 0.02~5mm of stereochemical structure on one side to die for molding;Stereochemical structure shown in Fig. 1 is continuous V-type.
Step 2: ontology circuit layer 3 flexible is made;The ontology circuit layer 3 for having etched conductive circuit layer is swum in molten It fishes for and is placed in lower substrate 2 in liquid;Or it is transferred in lower substrate 2 using double-sided adhesive;Or it is shifted using water-based glue Onto lower substrate 2;
Step 3: ontology circuit layer 3 is transferred in lower substrate 2;
Step 4: in 3 both ends extraction electrode 4 of ontology circuit layer;Electricity is made using the method for conductive glue bond or coating Pole 4;
Step 5: upper substrate 1 is made using the same method of step 1, upper substrate 1 is covered on ontology circuit layer 3; Either on ontology circuit layer 3 using spraying or roller coating or spin coating or printing or method for dispensing glue, form 0.02~ The elastic substrates of 5mm thickness, as upper substrate 1;Expose pressure sensor in 4 part of electrode.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical scheme and beneficial effects It describes in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in guarantor of the invention Within the scope of shield.

Claims (9)

1. a kind of pressure sensor, it is characterised in that: including upper substrate (1), lower substrate (2), ontology circuit layer (3) and draw electricity Pole (4);The upper substrate (1) and lower substrate (2) are elastic organic material, and one side is identical stereochemical structure, and has solid Structure is oppositely arranged on one side;The ontology circuit layer (3) is flexibility, conductive material is arranged thereon, conductive circuit layer is made;Institute It states ontology circuit layer (3) to be folded between substrate (1) and lower substrate (2), uniform fold is in upper substrate (1) and lower substrate (2) Stereochemical structure on, and the both ends of ontology circuit layer (3) distinguish extraction electrode (4);The upper substrate (1) and lower substrate (2) Elasticity modulus be 0.002~0.05Gpa, Poisson's ratio be 0.1~1, with a thickness of be 0.02~5mm, hardness number be 0~20 degree; The upper substrate (1) and lower substrate (2) use the film of required stereochemical structure for mold, and elastic organic material is filled into mould The substrate for having stereochemical structure on one side is shaped in tool.
2. a kind of pressure sensor according to claim 1, it is characterised in that: on the upper substrate (1) and lower substrate (2) Stereochemical structure section be continuous V-arrangement;Or section is continuous U-shaped;Or section is continuous sinusoidal waveform;Or Stereochemical structure is equally distributed triangular pyramid;Or stereochemical structure is the identical sphere stereoscopic structure of equally distributed size;Or The combination of the aforementioned stereochemical structure of person;Aforementioned stereochemical structure is continuous according to functional requirement is designed to that size is identical or size is different Structure.
3. a kind of pressure sensor according to claim 2, it is characterised in that: the conductor wire of the ontology circuit layer (3) Road floor is graphene conductive route;Or carbon nanotube carbon-based conductive route;Or metal conductive oxide route;Or metal With carbon-based composite conducting route;Or organic conductive material conducting wire;Or organic conductive material and carbon-based material is compound Conducting wire;Or organic conductive material and metal composite conducting wire.
4. a kind of pressure sensor according to claim 3, it is characterised in that: the extraction electrode (4) is that elasticity is carbon-based The electrode of conductive electrode or metal electrode or FPC electrode or organic group bottom plating conductive film.
5. a kind of pressure sensor according to claim 4, it is characterised in that: the conductor wire of the ontology circuit layer (3) Road includes power supply signal circuit (31), signal acquisition circuit (32), D/A converting circuit (33), MCU governor circuit (34) and letter Number output circuit (35);The power supply signal circuit (31) is MCU governor circuit (34) power supply, provides signal for pressure sensor Source;The signal acquisition circuit (32) acquires main body circuit (3) deformation bring resistance change;The D/A converting circuit (33) digital-to-analogue conversion is carried out to the data of signal acquisition circuit (32) acquisition, which is transmitted to MCU governor circuit (34) and is carried out Analysis, analysis result give terminal device master control (5) by signal output apparatus (35) output.
6. a kind of manufacture a kind of manufacturing method of pressure sensor as claimed in claim 5, it is characterised in that including following step It is rapid:
Step 1: lower substrate (2) are made;It uses the film of required stereochemical structure for mold, elastic organic material is filled into Die for molding is to have the substrate with a thickness of 0.02~5mm of stereochemical structure on one side;
Step 2: ontology circuit layer (3) flexible is made;
Step 3: ontology circuit layer (3) is transferred on lower substrate (2);
Step 4: in ontology circuit layer (3) both ends extraction electrode (4);
Step 5: upper substrate (1) is made using the same method of step 1, upper substrate (1) is covered in ontology circuit layer (3) On;Or elastic organic material is covered on ontology circuit layer (3), substrate (1) in formation;Expose pressure in electrode (4) part Propagated sensation sensor.
7. a kind of manufacturing method of pressure sensor according to claim 6, it is characterised in that: turn in the step 3 Shifting method are as follows: the ontology circuit layer (3) for having etched conductive circuit layer floating is fished in the solution and is placed on lower substrate (2) On;Or it is transferred on lower substrate (2) using double-sided adhesive;Or it is transferred on lower substrate (2) using water-based glue.
8. a kind of manufacturing method of pressure sensor according to claim 7, it is characterised in that: in the step 4, adopt Electrode (4) are made with the method for conductive glue bond or coating;In the step 5, elasticity is covered on ontology circuit layer (3) The method of organic material is to form 0.02~5mm using spraying or roller coating or spin coating or printing or method for dispensing glue Thick elastic substrates.
9. a kind of a kind of pressure detection method of pressure sensor as claimed in claim 5, it is characterised in that: power supply signal electricity Road (31) loads constant pressure or constant current or square-wave signal source to sensor;After sensor is under pressure, main body circuit layer (3) deformation, The signal acquisition circuit (32) acquires main body circuit layer (3) deformation bring resistance change;The D/A converting circuit (33) digital-to-analogue conversion is carried out to the data of signal acquisition circuit (32) acquisition, which is transmitted to MCU governor circuit (34) and is carried out Analysis calculates change in resistance amount, according to the material characteristic parameter that base material type becomes, calibrates to obtain pressure by normal pressure Value, pressure value give terminal device master control (5) by signal output apparatus (35) output.
CN201610008817.2A 2016-01-07 2016-01-07 A kind of pressure sensor, pressure detection method and manufacturing process Active CN105509937B (en)

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107329601A (en) * 2016-04-28 2017-11-07 常州二维碳素科技股份有限公司 A kind of touch screen and touch-control system and control method
CN106197775A (en) * 2016-08-31 2016-12-07 新港海岸(北京)科技有限公司 A kind of pressure transducer
CN111189476B (en) * 2020-01-14 2021-04-27 中国农业大学 A kind of flexible sensor and preparation method thereof
CN112179561B (en) * 2020-09-17 2022-09-30 五邑大学 Pressure sensor array calibration method, device and equipment

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DE2602583A1 (en) * 1975-01-22 1976-07-29 Minnesota Mining & Mfg MEASURING DEVICE WORKING WITH PIEZOELECTRIC MATERIAL
WO2011103808A1 (en) * 2010-02-24 2011-09-01 香港纺织及成衣研发中心有限公司 Flexible pressure sensor and flexible pressure sensing array
CN102713546A (en) * 2009-10-14 2012-10-03 国立大学法人东北大学 Sheet-like tactile sensor system
CN105094441A (en) * 2015-08-20 2015-11-25 宸鸿科技(厦门)有限公司 Pressure sensing device
CN205562090U (en) * 2016-01-07 2016-09-07 常州二维光电科技有限公司 Pressure sensor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2602583A1 (en) * 1975-01-22 1976-07-29 Minnesota Mining & Mfg MEASURING DEVICE WORKING WITH PIEZOELECTRIC MATERIAL
CN102713546A (en) * 2009-10-14 2012-10-03 国立大学法人东北大学 Sheet-like tactile sensor system
WO2011103808A1 (en) * 2010-02-24 2011-09-01 香港纺织及成衣研发中心有限公司 Flexible pressure sensor and flexible pressure sensing array
CN105094441A (en) * 2015-08-20 2015-11-25 宸鸿科技(厦门)有限公司 Pressure sensing device
CN205562090U (en) * 2016-01-07 2016-09-07 常州二维光电科技有限公司 Pressure sensor

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