CN105527463A - RF atomic power microscope scanning probe and preparation method thereof - Google Patents
RF atomic power microscope scanning probe and preparation method thereof Download PDFInfo
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- CN105527463A CN105527463A CN201610116540.5A CN201610116540A CN105527463A CN 105527463 A CN105527463 A CN 105527463A CN 201610116540 A CN201610116540 A CN 201610116540A CN 105527463 A CN105527463 A CN 105527463A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
- G01Q60/38—Probes, their manufacture, or their related instrumentation, e.g. holders
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Abstract
本发明公开了一种射频原子力显微镜扫描探针及其制备方法。制备的主要步骤：第一，在衬底为高阻的绝缘层上硅材料上，通过光刻和刻蚀技术，获得射频传输线的台面隔离；第二，通过光刻、电子束蒸发及快速退火技术，形成欧姆接触；第三，通过光刻及电子束蒸发技术，获得射频传输线；最后，通过光刻和刻蚀技术，形成探针整体，包括探针躯干、探针悬臂梁梁和探针针尖。利用所得的探针对样品进行形貌扫描时，由于射频电路对电抗(容抗和感抗)极其敏感，样品表面形貌的变化将引起容抗的变化，导致射频谐振信号发生偏移。利用射频电路的高速特性，通过该射频谐振信号作为反馈，解决原子力显微镜系统扫描速度较慢的问题，实现高速扫描成像的功能。
The invention discloses a radio frequency atomic force microscope scanning probe and a preparation method thereof. The main steps of preparation: first, on the silicon material on the insulating layer with high resistance as the substrate, obtain the mesa isolation of the radio frequency transmission line through photolithography and etching technology; second, through photolithography, electron beam evaporation and rapid annealing technology to form ohmic contact; thirdly, through photolithography and electron beam evaporation technology, to obtain radio frequency transmission line; finally, through photolithography and etching technology, to form the whole probe, including probe trunk, probe cantilever beam and probe needle point. When the obtained probe is used to scan the topography of the sample, since the radio frequency circuit is extremely sensitive to reactance (capacitance and inductance), the change of the sample surface morphology will cause the change of capacitive reactance, resulting in the shift of the radio frequency resonance signal. Utilizing the high-speed characteristics of the radio frequency circuit, the radio frequency resonance signal is used as feedback to solve the problem of slow scanning speed of the atomic force microscope system and realize the function of high-speed scanning imaging.
Description
Technical field
The present invention relates to a kind of afm scan probe, particularly relate to a kind of can the radio frequency atomic force microscope scan-probe and preparation method thereof of high speed readout, belong to microscopic appearance imaging field.
Background technology
Atomic force microscope (AtomicForceMicroscope, AFM) be utilize micro-cantilever to experience and amplify the acting force on cantilever between tapering probe and tested sample atoms, by detecting interatomic acting force, thus reaching the object of detection, obtaining the microscopic appearance of sample surfaces.Can carry out the high precision imaging of micro-nano-scale to surface topographies such as conductor, semiconductor and insulators, be a kind of analytical instrument being used for studying solid material surface structure.Due to AFM have atom level high spatial resolution, three-dimension surface can be provided, to testing sample without particular/special requirement, there is multiple imaging pattern, be easy to the advantage such as integrated with other technologies, have at the scientific research field such as chemistry, biology, physics, material and the industrial circle such as semiconductor, microelectronics and apply extremely widely.
In AFM system, the signal of acquisition is realized by AFM probe.At present, the small cantilever of normal use senses the interaction between needle point and sample, and this acting force can make micro-cantilever swing, and utilizes sensor detect these changes and by this signal to feedback system, can obtain distribution of forces information; By this signal to feedback system, the character of surface of sample can be presented in the mode of image, final acquisition surface topography information and surfaceness information.
AFM probe can be divided into cantilever and needle point two parts, and semi-girder is made up of general 100 ~ 500 μm long and about 500nm ~ 5 μm thick silicon chip or nitrogenize silicon chip usually.Needle point is positioned at the top of semi-girder, is used for detecting the interaction force between sample-needle point, and the acuity of needle point directly determines the spatial resolution of AFM imaging, and the impact of being popped one's head in is too large.In addition, the resonant frequency of cantilever then directly determines the maximum image taking speed of AFM, and operating rate is slower.
Object of the present invention is exactly for the deficiency in prior art, a kind of new radio frequency AFM probe and preparation method thereof is provided, utilize radio circuit to the sensitivity characteristic of reactance, by the coupling capacitance between sensing needle point and sample, present the character of surface of sample with the change of radio frequency resonant frequency.Utilize the high speed characteristics of radio circuit, achieve the function of high-velocity scanning imaging.And the resolution of this probe depends on that rf probe is to the susceptibility of electric capacity but not the acuity of probe tip, less to the dependence of probe tip.
Summary of the invention
In view of the deficiency that prior art exists, object of the present invention aims to provide a kind of New-type radio-frequency AFM scan-probe, solves the above-mentioned drawback of conventional AFM probe.
Present invention also offers the preparation method of this probe.
The present invention is achieved through the following technical solutions:
A kind of radio frequency AFM scan-probe, described radio frequency AFM scan-probe comprises probe trunk, micro cantilever probe, probe tip and radio-frequency transmission line.Described radio frequency AFM scan-probe is prepared into by silicon (RadioFrequencySilicon-On-Insulator, RFSOI) material on RF isolation layer, for high-velocity scanning sample surfaces, obtains the character of surface signal of sample; The semi-girder of described probe is fabricated from a silicon; Described probe tip is positioned at one end of described micro cantilever probe; Described radio-frequency transmission line is positioned at the surface of probe trunk, and extends to probe tip along semi-girder, provides the input and output of corresponding ground connection, radiofrequency signal; The shape of described radio-frequency transmission line and area determine the resonance frequency of radio circuit, can design according to the simulation result of HFSS 3 D electromagnetic simulation software, after this radio-frequency transmission line is connected with radio circuit, when topography scan is carried out to sample, because radio circuit is extremely responsive to reactance (capacitive reactance and induction reactance), the change of sample surface morphology will cause the change of capacitive reactance, cause radio frequency resonant signal to offset.Utilize the high speed characteristics of radio circuit, by this radio frequency resonant signal as feedback, solve the slow problem of AFM system scan, realize the function of high-velocity scanning imaging.
A preparation method for radio frequency AFM scan-probe, comprises the following steps: RFSOI material RCA standard cleaning method is cleaned by (1); (2) in the top layer Si of RFSOI after cleaning, utilize ultraviolet photolithographic, sense coupling technology etches the dark table top of about 80nm, and guarantee to isolate between each table top; (3) after organic washing, photoetching is aimed at by ultraviolet, after development, the SiO2 layer of region surface not covered by photoresist is eroded with hydrofluorite, utilize metal Ti that electron beam evaporation technique evaporation 20nm is thick and the thick Al of 120nm, wet method peel off after 400 DEG C of short annealings 30 minutes in nitrogen atmosphere, form Ohmic contact; (4) aim at photoetching, electron beam evaporation technique by ultraviolet, the Au of the Ni that evaporation 20nm is thick and/270nm, wet method forms radio-frequency transmission line after peeling off in Ohmic contact; (5) last, aim at photoetching and lithographic technique by ultraviolet, form probe overall, comprise probe trunk, micro cantilever probe and probe tip.
Radio frequency AFM scan-probe of the present invention adopts RFSOI material to be prepared from, and described RFSOI is compared with the SOI material of routine, and the resistivity of substrate is 800 ~ 1000 Ω .cm.SOI is applied on high-impedance substrate by RFSOI, can improve the high frequency characteristics of chip significantly, greatly reduces resistance decrement and crosstalk noise.Due to the integrality of substrate effect radiofrequency signal, and radio frequency performance upgrade key effect.When radio frequency chip is formed on body silicon chip, the semiconduting properties of silicon causes the decay of radiofrequency signal in substrate; Meanwhile, the semiconduting properties of silicon also can cause the transmission of parasitic disturbances (crosstalk noise).SOI is applied to high frequency characteristics high-impedance substrate can improving significantly chip, greatly reduces resistance decrement and crosstalk noise.High impedance SOI substrate is that radio frequency and SoC circuit designer open brand-new boundary, make usually to need the function of expensive iii-v compound (as antenna switches) to be able to can be incorporated in silicon chip, achieve comparable performance and higher integrative levels, reduce the cost of whole system simultaneously.Due to the improvement of insulating efficiency, therefore the higher chip configuration of density can be reached.The top layer processed also can be transferred to various low electrical conductivity substrate (such as glass) by SOI, improves radio frequency usefulness further.RFSOI technological design described in the present invention and manufacture are used for the switch chip in radio-frequency front-end and antenna switch module.Compare traditional GaAs and SOS technique, RFSOI can provide excellent performance and cheap cost simultaneously.
The present invention is on the basis of the technology of preparing of conventional silicon materials beam type AFM scan-probe, adopts RFSOI material, and integratedly on probe prepares radio-frequency transmission line.This invention had both inherited the scan function of traditional silicon beam type AFM, utilized micro-cantilever to experience and amplified the acting force on cantilever between tapering probe and tested sample atoms, thus reaching the object of detection; Again by the radio-frequency transmission line sensing on probe and the coupling capacitance between sample, by radio frequency resonant frequency as feedback signal, replace probe tip contact scanning sample, less to the acuity dependence of probe tip, and utilizing radiofrequency signal as read output signal, operating rate is very fast.
Accompanying drawing explanation
Fig. 1 is a kind of radio frequency AFM scan-probe structural representation provided by the invention;
In figure, each mark represents respectively: 1-probe trunk, 2-micro cantilever probe, 3-probe tip, 4-radio-frequency transmission line
Fig. 2 is the schematic diagram of a kind of radio frequency AFM scan-probe preparation process provided by the invention.
In figure, each mark represents respectively: the top layer silicon (resistivity <20 Ω .cm) of 201-RFSOI material, the isolating oxide layer of 202-RFSOI material, the high-impedance substrate (resistivity is 800 ~ 1000 Ω .cm) of 203-RFSOI material, 204-metal Ti and Al, 205-W metal and Au
Embodiment
Below in conjunction with drawings and Examples, technical scheme of the present invention is further described.
Fig. 1 is the radio frequency AFM scan-probe structural representation in the specific embodiment of the invention, comprises probe trunk 1, micro cantilever probe 2, probe tip 3 and radio-frequency transmission line 4.Probe tip 3 is positioned at one end of described micro cantilever probe 2, radio-frequency transmission line 4 is positioned at the surface of probe trunk 1, and extend to probe tip 3 along semi-girder 2, the shape of radio-frequency transmission line 4 and area determine the resonance frequency of radio circuit, when utilizing probe to carry out topography scan to sample, because radio circuit is extremely responsive to reactance (capacitive reactance and induction reactance), the change of sample surface morphology will cause the change of capacitive reactance, radio frequency resonant signal is caused to offset, using this signal as feedback, the pattern imaging of sample surfaces can be realized.
Probe tip 3 is made up of Si material, and its acuity determines the spatial resolution of AFM imaging.
The area of radio-frequency transmission line 4 and shape determine the resonance frequency of radio circuit, can design according to 3 D electromagnetic simulation software analog result.
Figure 2 shows that the schematic diagram of AFM scanning calorimeter probe preparation process of the present invention, comprise the steps: that RFSOI material RCA standard cleaning method is cleaned by (1); (2), in the top layer Si 201 of RFSOI after cleaning, utilize ultraviolet photolithographic, table top that sense coupling technology etches the dark radio-frequency transmission line of about 80nm, and guarantee to isolate between each table top; (3) after organic washing, photoetching is aimed at by ultraviolet, after development, the SiO2 layer of region surface not covered by photoresist is eroded with hydrofluorite, utilize metal Ti/Al204 that electron beam evaporation technique evaporation 20/120nm is thick, wet method peel off after in nitrogen atmosphere 400 DEG C carry out short annealing 30 minutes, formed Ohmic contact; (4) aim at photoetching and electron beam evaporation technique by ultraviolet, the Ni/Au205 that evaporation 20/270nm is thick, wet method forms radio-frequency transmission line 4 after peeling off in Ohmic contact; (5) last, aim at photoetching and lithographic technique by ultraviolet, form probe overall, comprise probe trunk 1, micro cantilever probe 2 and probe tip 3.
RFSOI material is compared with the SOI material of routine, and substrate 203 is the silicon materials of high resistivity, and resistivity is 800 ~ 1000 Ω .cm.
The present invention also improves following.
On the basis of conventional Si Material Cantilever Beam formula AFM probe, adopt substrate to be that AFM probe prepared by the RFSOI material of high impedance, and integratedly on probe prepare radio-frequency transmission line.
Compared to prior art, the present invention has following beneficial effect:
Both the function of the Si beam type probe commonly used can have been realized, surface structure and the character of material is studied by the atomic weak interatomic interaction force detected between testing sample surface and a miniature force sensitive element, the radio-frequency transmission line on probe can be adopted again to sense the coupling capacitance of probe and sample surfaces, utilize the high speed characteristics of radio circuit and the sensitivity characteristic to reactance, adopt radio frequency resonant signal as feedback, solve the slow problem of AFM system scan, realize the function of high-velocity scanning imaging.Utilize radio frequency resonant frequency as feedback signal, replace the contact detected between atom, present the character of surface of sample, when solving AFM scanning, the acuity of probe tip is on the impact of resolution.
What finally illustrate is, above embodiment is only in order to illustrate technical scheme of the present invention and unrestricted, although with reference to preferred embodiment to invention has been detailed description, those of ordinary skill in the art is to be understood that, can modify to technical scheme of the present invention or equivalent replacement, and not departing from aim and the scope of technical solution of the present invention, it all should be encompassed in the middle of right of the present invention.
Claims (5)
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610116540.5A CN105527463A (en) | 2016-03-01 | 2016-03-01 | RF atomic power microscope scanning probe and preparation method thereof |
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| CN201610116540.5A CN105527463A (en) | 2016-03-01 | 2016-03-01 | RF atomic power microscope scanning probe and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108017881A (en) * | 2017-11-22 | 2018-05-11 | 河海大学常州校区 | A kind of atomic force microscope probe and preparation method thereof |
| CN112877765A (en) * | 2021-01-14 | 2021-06-01 | 韩金烙 | Scanning probe is maintained device of getting rid of surperficial rust fast of usefulness |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108017881A (en) * | 2017-11-22 | 2018-05-11 | 河海大学常州校区 | A kind of atomic force microscope probe and preparation method thereof |
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| CN112877765A (en) * | 2021-01-14 | 2021-06-01 | 韩金烙 | Scanning probe is maintained device of getting rid of surperficial rust fast of usefulness |
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Application publication date: 20160427 |