CN105550432A - Three-dimensional integrated circuit chip and power network layout method thereof - Google Patents
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Abstract
本发明提供一种三维集成电路芯片及其电源网络布局方法,所述方法包括:提供彼此连通的至少两层芯片;于所述至少两层芯片中的顶层芯片上设置重布线层,所述重布线层与所述顶层芯片的中间区域连通;将所述重布线层与外部电源连通。本发明的三维集成电路芯片及其电源网络布局方法,于顶层芯片上设置重布线层,通过重布线层将外部电源引入顶层芯片的中间区域,其它芯片再通过位于中间区域的硅通孔从顶层芯片获取电源供应,由于不必受限于顶层芯片本身的厚度和面积,不占用顶层芯片的绕线资源,重布线层上的导线厚度、宽度可以设计的很大,从而大大减少导线上的电阻,这样顶层芯片的供电效果将大大改善,从而提高整颗3DIC芯片的电源表现。
The present invention provides a three-dimensional integrated circuit chip and its power supply network layout method. The method includes: providing at least two layers of chips connected to each other; setting a rewiring layer on the top chip of the at least two layers of chips; The wiring layer communicates with the middle area of the top chip; connects the rewiring layer with an external power supply. In the three-dimensional integrated circuit chip and its power supply network layout method of the present invention, a rewiring layer is arranged on the top chip, and an external power supply is introduced into the middle area of the top chip through the rewiring layer, and other chips pass through silicon holes located in the middle area from the top layer. The chip obtains power supply. Since it is not limited by the thickness and area of the top-layer chip itself, it does not occupy the winding resources of the top-layer chip. The thickness and width of the wire on the redistribution layer can be designed to be very large, thereby greatly reducing the resistance on the wire. In this way, the power supply effect of the top chip will be greatly improved, thereby improving the power supply performance of the entire 3DIC chip.
Description
技术领域 technical field
本发明涉及集成电路领域,尤其涉及一种三维集成电路芯片及其电源网络布局方法。 The invention relates to the field of integrated circuits, in particular to a three-dimensional integrated circuit chip and a power supply network layout method thereof.
背景技术 Background technique
随着SoC(系统集成芯片)的规模越来越大,3DIC(三维集成电路)芯片正在成为主流。超大规模的3DIC芯片在电源供应网络设计上面临着巨大的挑战,电源供应能力不足会导致整个3DIC芯片无法正常工作。因此如何在传统SoC的二维电源供应网络的基础上将其扩展到三维,并保证电源供应能力,是一项重要技术。 With the increasing scale of SoC (system integrated chip), 3DIC (three-dimensional integrated circuit) chip is becoming mainstream. Ultra-large-scale 3DIC chips face huge challenges in the design of power supply networks. Insufficient power supply capacity will cause the entire 3DIC chip to fail to work properly. Therefore, how to extend the traditional SoC's two-dimensional power supply network to three dimensions and ensure the power supply capability is an important technology.
图1为现有的3DIC芯片电源供应方案示意图。如图所示,至少两层(在此示出为三层)芯片10通过TSV(硅通孔)20彼此连通,其中,顶层芯片11通过导线30连接到位于边缘区域的焊盘40,焊盘40与外部电源(未示出)连通从而将外部电源引入顶层芯片11,其它芯片12再通过位于中间区域的硅通孔20从顶层芯片11获取电源供应。现有技术对于除顶层芯片11之外的其它芯片12都有着较强的供电能力,然而整个3DIC芯片的供电瓶颈在于通过导线30和焊盘40与外部相连的顶层芯片11,这是因为受限于顶层芯片11的厚度和面积,顶层芯片11上的绕线资源非常有限,致使顶层芯片11的供电条件仅与普通二维芯片类似,对于肩负整个3DIC芯片供电责任的顶层芯片11,这样的设计可能会导致供电不足从而影响到整个3DIC芯片的性能。 FIG. 1 is a schematic diagram of an existing 3DIC chip power supply solution. As shown in the figure, at least two layers (here shown as three layers) of chips 10 communicate with each other through TSVs (Through Silicon Vias) 20, wherein the top layer chips 11 are connected to pads 40 located at the edge area by wires 30, the pads 40 communicates with an external power supply (not shown) so as to introduce the external power supply to the top chip 11 , and other chips 12 obtain power supply from the top chip 11 through the TSV 20 located in the middle area. The prior art has a strong power supply capability for other chips 12 except the top chip 11. However, the power supply bottleneck of the entire 3DIC chip lies in the top chip 11 connected to the outside through the wire 30 and the pad 40. This is due to limited Due to the thickness and area of the top chip 11, the winding resources on the top chip 11 are very limited, so that the power supply conditions of the top chip 11 are only similar to those of ordinary two-dimensional chips. For the top chip 11, which is responsible for the power supply of the entire 3DIC chip, such a design It may cause insufficient power supply and thus affect the performance of the entire 3DIC chip.
发明内容 Contents of the invention
本发明的目的在于提供一种三维集成电路芯片及其电源网络布局方法,改善顶层芯片的供电效果,提高整颗三维集成电路芯片的电源表现。 The purpose of the present invention is to provide a three-dimensional integrated circuit chip and its power supply network layout method, which can improve the power supply effect of the top chip and improve the power supply performance of the whole three-dimensional integrated circuit chip.
基于以上考虑,本发明的一个方面提供一种三维集成电路芯片的电源网络布局方法,包括:提供彼此连通的至少两层芯片;于所述至少两层芯片中的顶层芯片上设置重布线层,所述重布线层与所述顶层芯片的中间区域连通;将所述重布线层与外部电源连通。 Based on the above considerations, one aspect of the present invention provides a power supply network layout method of a three-dimensional integrated circuit chip, including: providing at least two layers of chips connected to each other; setting a rewiring layer on the top chip of the at least two layers of chips, The redistribution layer communicates with the middle area of the top chip; connects the redistribution layer with an external power supply.
优选地,所述重布线层通过位于中间区域的硅通孔或非硅通孔与所述顶层芯片的中间区域连通。 Preferably, the redistribution layer communicates with the middle area of the top chip through a through-silicon via or a non-through-silicon via located in the middle area.
优选地,所述重布线层通过位于边缘区域的焊盘与所述外部电源连通。 Preferably, the redistribution layer communicates with the external power supply through pads located in the edge region.
优选地,于所述顶层芯片上设置彼此连通的至少两层重布线层。 Preferably, at least two redistribution layers connected to each other are arranged on the top chip.
优选地,所述至少两层重布线层之间通过非硅通孔连通。 Preferably, the at least two redistribution layers are connected through non-through-silicon vias.
本发明的另一方面提供一种三维集成电路芯片,包括:彼此连通的至少两层芯片;设置于所述至少两层芯片中的顶层芯片上的重布线层,所述重布线层与所述顶层芯片的中间区域连通;所述重布线层与外部电源连通。 Another aspect of the present invention provides a three-dimensional integrated circuit chip, including: at least two layers of chips connected to each other; a rewiring layer arranged on the top chip of the at least two layers of chips, the rewiring layer and the The middle area of the top chip is communicated; the redistribution layer is communicated with the external power supply.
优选地,所述重布线层通过位于中间区域的硅通孔或非硅通孔与所述顶层芯片的中间区域连通。 Preferably, the redistribution layer communicates with the middle area of the top chip through a through-silicon via or a non-through-silicon via located in the middle area.
优选地,所述重布线层通过位于边缘区域的焊盘与所述外部电源连通。 Preferably, the redistribution layer communicates with the external power supply through pads located in the edge region.
优选地,所述顶层芯片上设置有彼此连通的至少两层重布线层。 Preferably, at least two redistribution layers connected to each other are arranged on the top chip.
优选地,所述至少两层重布线层之间通过非硅通孔连通。 Preferably, the at least two redistribution layers are connected through non-through-silicon vias.
本发明的三维集成电路芯片及其电源网络布局方法,于顶层芯片上设置重布线层,通过重布线层将外部电源引入顶层芯片的中间区域,其它芯片再通过位于中间区域的硅通孔从顶层芯片获取电源供应,由于不必受限于顶层芯片本身的厚度和面积,不占用顶层芯片的绕线资源,重布线层上的导线厚度、宽度可以设计的很大,从而大大减少导线上的电阻,这样顶层芯片的供电效果将大大改善,从而提高整颗3DIC芯片的电源表现。 In the three-dimensional integrated circuit chip and its power supply network layout method of the present invention, a rewiring layer is arranged on the top chip, and an external power supply is introduced into the middle area of the top chip through the rewiring layer, and other chips pass through silicon holes located in the middle area from the top layer. The chip obtains power supply. Since it is not limited by the thickness and area of the top-layer chip itself, it does not occupy the winding resources of the top-layer chip. The thickness and width of the wire on the redistribution layer can be designed to be very large, thereby greatly reducing the resistance on the wire. In this way, the power supply effect of the top chip will be greatly improved, thereby improving the power supply performance of the entire 3DIC chip.
附图说明 Description of drawings
通过参照附图阅读以下所作的对非限制性实施例的详细描述,本发明的其它特征、目的和优点将会变得更明显。 Other features, objects and advantages of the present invention will become more apparent by reading the following detailed description of non-limiting embodiments with reference to the accompanying drawings.
图1为现有的三维集成电路芯片的电源网络示意图; FIG. 1 is a schematic diagram of a power supply network of an existing three-dimensional integrated circuit chip;
图2为本发明的三维集成电路芯片的电源网络示意图; Fig. 2 is the schematic diagram of the power supply network of the three-dimensional integrated circuit chip of the present invention;
图3为本发明的三维集成电路芯片的重布线层示意图。 FIG. 3 is a schematic diagram of the redistribution layer of the three-dimensional integrated circuit chip of the present invention.
在图中,贯穿不同的示图,相同或类似的附图标记表示相同或相似的装置(模块)或步骤。 In the drawings, the same or similar reference numerals denote the same or similar means (modules) or steps throughout different views.
具体实施方式 detailed description
为解决上述现有技术中的问题,本发明提供一种三维集成电路芯片及其电源网络布局方法,于顶层芯片上设置重布线层,通过重布线层将外部电源引入顶层芯片的中间区域,其它芯片再通过位于中间区域的硅通孔从顶层芯片获取电源供应,由于不必受限于顶层芯片本身的厚度和面积,不占用顶层芯片的绕线资源,重布线层上的导线厚度、宽度可以设计的很大,从而大大减少导线上的电阻,这样顶层芯片的供电效果将大大改善,从而提高整颗3DIC芯片的电源表现。 In order to solve the above-mentioned problems in the prior art, the present invention provides a three-dimensional integrated circuit chip and its power supply network layout method. A redistribution layer is arranged on the top chip, and an external power supply is introduced into the middle area of the top chip through the redistribution layer. Other The chip then obtains power supply from the top chip through the TSV located in the middle area. Since it does not need to be limited by the thickness and area of the top chip itself, it does not occupy the winding resources of the top chip, and the thickness and width of the wire on the redistribution layer can be designed. It is very large, thereby greatly reducing the resistance on the wire, so that the power supply effect of the top chip will be greatly improved, thereby improving the power performance of the entire 3DIC chip.
在以下优选的实施例的具体描述中,将参考构成本发明一部分的所附的附图。所附的附图通过示例的方式示出了能够实现本发明的特定的实施例。示例的实施例并不旨在穷尽根据本发明的所有实施例。可以理解,在不偏离本发明的范围的前提下,可以利用其他实施例,也可以进行结构性或者逻辑性的修改。因此,以下的具体描述并非限制性的,且本发明的范围由所附的权利要求所限定。 In the following detailed description of the preferred embodiment, reference is made to the accompanying drawings which form a part hereof. The accompanying drawings show, by way of example, specific embodiments in which the invention can be practiced. The illustrated embodiments are not intended to be exhaustive of all embodiments in accordance with the invention. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. Accordingly, the following detailed description is not limiting, and the scope of the invention is defined by the appended claims.
本发明的一个方面提供一种三维集成电路芯片的电源网络布局方法,包括:提供彼此连通的至少两层芯片110;于所述至少两层芯片110中的顶层芯片111上设置重布线层150,所述重布线层150与所述顶层芯片111的中间区域连通;将所述重布线层150与外部电源连通。 One aspect of the present invention provides a power supply network layout method of a three-dimensional integrated circuit chip, comprising: providing at least two layers of chips 110 connected to each other; setting a redistribution layer 150 on the top chip 111 of the at least two layers of chips 110, The redistribution layer 150 communicates with the middle area of the top chip 111 ; connects the redistribution layer 150 with an external power supply.
如图2所示,提供彼此连通的至少两层(在此示出为三层)芯片110,该三层芯片110通过硅通孔120彼此连通。在原有的顶层芯片111之上,再增加一层RDL(重布线层)150,该重布线层150通过导线130连接到位于边缘区域的焊盘140,焊盘140与外部电源(未示出)连通从而将外部电源引入重布线层150的中间区域,重布线层150再通过位于中间区域的硅通孔或非硅通孔160与顶层芯片111连通从而将重布线层150上的电源供入顶层芯片111的中间区域,由于不必受限于顶层芯片111本身的厚度和面积,不占用顶层芯片111的绕线资源,重布线层150上的导线130的厚度、宽度可以设计的很大,例如,如图3所示的大面积电源布线,在除了必要的信号线之外的重布线层区域内,符合设计规则的前提下,全部填上电源走线,以减少导线130上的电阻,这样顶层芯片111的供电效果将大大改善,其它芯片112再通过位于中间区域的硅通孔120从顶层芯片111获取电源供应,从而提高整颗3DIC芯片的电源表现。 As shown in FIG. 2 , at least two layers (shown here as three layers) of chips 110 communicating with each other are provided, and the three layers of chips 110 are communicated with each other through silicon vias 120 . On top of the original top chip 111, a layer of RDL (redistribution layer) 150 is added, and the redistribution layer 150 is connected to the pad 140 located in the edge area through the wire 130, and the pad 140 is connected to an external power supply (not shown) connected so as to introduce external power into the middle area of the rewiring layer 150, and the rewiring layer 150 communicates with the top chip 111 through the through-silicon via or non-through-silicon via 160 in the middle area so as to supply the power on the rewiring layer 150 to the top layer The middle area of the chip 111 is not limited to the thickness and area of the top chip 111 itself, and does not occupy the wiring resources of the top chip 111. The thickness and width of the wire 130 on the redistribution layer 150 can be designed very large, for example, For the large-area power supply wiring shown in Figure 3, in the redistribution layer area except for the necessary signal lines, under the premise of complying with the design rules, all power supply lines are filled to reduce the resistance on the wire 130, so that the top layer The power supply effect of the chip 111 will be greatly improved, and the other chips 112 will obtain power supply from the top chip 111 through the TSV 120 located in the middle area, thereby improving the power performance of the entire 3DIC chip.
本领域技术人员可以理解,根据实际需要,也可以于顶层芯片111上设置两层以上重布线层150,各层重布线层150之间通过非硅通孔彼此连通。 Those skilled in the art can understand that, according to actual needs, more than two redistribution layers 150 may be disposed on the top chip 111 , and each redistribution layer 150 is connected to each other through non-through-silicon vias.
本发明所述的非硅通孔,即不穿过硅的通孔(Via)。 The non-through-silicon via in the present invention refers to a through-hole (Via) that does not pass through silicon.
本发明的另一方面提供一种三维集成电路芯片,包括:彼此连通的至少两层芯片110;设置于所述至少两层芯片110中的顶层芯片111上的重布线层150,所述重布线层150与所述顶层芯片111的中间区域连通;所述重布线层150与外部电源连通。 Another aspect of the present invention provides a three-dimensional integrated circuit chip, including: at least two layers of chips 110 connected to each other; The layer 150 communicates with the middle area of the top chip 111; the redistribution layer 150 communicates with the external power supply.
优选地,所述重布线层150通过位于中间区域的硅通孔或非硅通孔160与所述顶层芯片111的中间区域连通。 Preferably, the redistribution layer 150 communicates with the middle area of the top chip 111 through a through-silicon via or a non-through-silicon via 160 located in the middle area.
优选地,所述重布线层150通过位于边缘区域的焊盘140与所述外部电源连通。 Preferably, the redistribution layer 150 communicates with the external power supply through the pad 140 located in the edge area.
优选地,所述顶层芯片111上设置有彼此连通的至少两层重布线层150,所述至少两层重布线层150之间通过非硅通孔连通。 Preferably, the top chip 111 is provided with at least two redistribution layers 150 connected to each other, and the at least two redistribution layers 150 are connected through non-through-silicon vias.
本发明的三维集成电路芯片及其电源网络布局方法,于顶层芯片上设置重布线层,通过重布线层将外部电源引入顶层芯片的中间区域,其它芯片再通过位于中间区域的硅通孔从顶层芯片获取电源供应,由于不必受限于顶层芯片本身的厚度和面积,不占用顶层芯片的绕线资源,重布线层上的导线厚度、宽度可以设计的很大,从而大大减少导线上的电阻,这样顶层芯片的供电效果将大大改善,从而提高整颗3DIC芯片的电源表现。 In the three-dimensional integrated circuit chip and its power supply network layout method of the present invention, a rewiring layer is arranged on the top chip, and an external power supply is introduced into the middle area of the top chip through the rewiring layer, and other chips pass through silicon holes located in the middle area from the top layer. The chip obtains power supply. Since it is not limited by the thickness and area of the top-layer chip itself, it does not occupy the winding resources of the top-layer chip. The thickness and width of the wire on the redistribution layer can be designed to be very large, thereby greatly reducing the resistance on the wire. In this way, the power supply effect of the top chip will be greatly improved, thereby improving the power supply performance of the entire 3DIC chip.
对于本领域技术人员而言,显然本发明不限于上述示范性实施例的细节,而且在不背离本发明的精神或基本特征的情况下,能够以其他的具体形式实现本发明。因此,无论如何来看,均应将实施例看作是示范性的,而且是非限制性的。例如,根据不同的封装方式,多层芯片中的顶层芯片可能位于封装件的上方或下方,因此“顶层”并不限定特定的方向。此外,明显的,“包括”一词不排除其他元素和步骤,并且措辞“一个”不排除复数。装置权利要求中陈述的多个元件也可以由一个元件来实现。第一,第二等词语用来表示名称,而并不表示任何特定的顺序。 It will be apparent to those skilled in the art that the invention is not limited to the details of the above-described exemplary embodiments, but that the invention can be embodied in other specific forms without departing from the spirit or essential characteristics of the invention. Accordingly, the embodiments should be regarded in all respects as exemplary and not restrictive. For example, according to different packaging methods, the top chip in a multi-layer chip may be located above or below the package, so the "top layer" does not define a specific direction. Furthermore, it is obvious that the word "comprising" does not exclude other elements and steps, and the word "a" does not exclude the plural. A plurality of elements recited in device claims may also be embodied by one element. The words first, second, etc. are used to denote names and do not imply any particular order.
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Cited By (5)
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