CN105551950B - Grinding method of package substrate - Google Patents
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- CN105551950B CN105551950B CN201510679594.8A CN201510679594A CN105551950B CN 105551950 B CN105551950 B CN 105551950B CN 201510679594 A CN201510679594 A CN 201510679594A CN 105551950 B CN105551950 B CN 105551950B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
提供封装基板的磨削方法,不具备磨削装置也能够利用一台切削装置将封装基板的密封树脂层薄化到期望的厚度。切削装置包含具有第1平磨削磨石的第1切削构件以及具有第2平磨削磨石的第2切削构件,封装基板具有利用树脂将多个器件的背面密封的密封树脂层,该方法具有:保护部件粘贴工序;保持工序;实施保持工序之后使第1平磨削磨石与密封树脂层接触并且使第1平磨削磨石与封装基板在磨削进给方向上相对移动而将密封树脂层磨削至第1厚度的第1磨削工序;实施第1磨削工序之后使第2平磨削磨石与密封树脂层接触并且使第2平磨削磨石与封装基板在磨削进给方向上相对移动而将密封树脂层最终磨削至期望的厚度的第2磨削工序。
Provided is a method of grinding a package substrate, which enables thinning of the sealing resin layer of the package substrate to a desired thickness with a single cutting device without having a grinding device. The cutting device includes a first cutting member having a first flat grinding whetstone and a second cutting member having a second flat grinding whetstone, a package substrate has a sealing resin layer for sealing the back surfaces of the plurality of devices with resin, and the method A protective member sticking step; a holding step; after the holding step is performed, the first flat grinding whetstone is brought into contact with the sealing resin layer, and the first flat grinding whetstone and the package substrate are relatively moved in the grinding feed direction to The first grinding step in which the sealing resin layer is ground to the first thickness; after the first grinding step is performed, the second flat grinding stone is brought into contact with the sealing resin layer, and the second flat grinding stone is ground with the package substrate. A 2nd grinding process which relatively moves in a cutting feed direction and grinds a sealing resin layer to a desired thickness finally.
Description
技术领域technical field
本发明涉及封装基板的磨削方法,将封装基板的密封树脂层磨削至期望的厚度。The present invention relates to a method of grinding a package substrate, wherein the sealing resin layer of the package substrate is ground to a desired thickness.
背景技术Background technique
在CSP(Chip Size Package:芯片尺寸封装)或QFN(Quad Flat Non-leadedPackage:四侧无引脚扁平封装)等封装基板中,分别将具有多个电极的多个器件的正面以使其与电极基板(引脚框架)相对的方式隔着规定的间隔地配设,对配设于电极基板的器件的背面进行树脂密封,通过切削装置将封装基板分割成各个封装器件,分割后的封装器件广泛应用于移动电话、个人计算机等各种电子设备。In a package substrate such as a CSP (Chip Size Package) or a QFN (Quad Flat Non-leaded Package), the front surfaces of a plurality of devices having a plurality of electrodes are respectively aligned with the electrodes. The substrates (lead frames) are arranged so as to face each other at a predetermined interval, and the backside of the device arranged on the electrode substrate is resin-sealed, and the package substrate is divided into individual package devices by a cutting device, and the packaged devices after the division are widely used. It is used in various electronic devices such as mobile phones and personal computers.
近年来,伴随着移动电话、个人计算机等电子设备的小型化、轻量化,各个封装器件也向小型化、薄型化推进。作为实现小型化、薄型化的技术公知有如下技术:在将封装基板分割成各个封装器件之前,将封装基板的背面的密封树脂磨削至期望的厚度,然后通过切削装置分割成各个封装器件(例如,参照日本特开2011-181641号公报和日本特开2014-015490号公报)。In recent years, with the miniaturization and weight reduction of electronic devices such as mobile phones and personal computers, the miniaturization and thinning of each packaged device are also advancing. As a technique for achieving downsizing and thinning, before dividing a package substrate into individual package devices, grinding the sealing resin on the back surface of the package substrate to a desired thickness, and then dividing it into individual package devices ( For example, refer to Japanese Patent Laid-Open No. 2011-181641 and Japanese Patent Laid-Open No. 2014-015490).
专利文献1:日本特开2011-181641号公报Patent Document 1: Japanese Patent Laid-Open No. 2011-181641
专利文献2:日本特开2014-015490号公报Patent Document 2: Japanese Patent Laid-Open No. 2014-015490
发明内容SUMMARY OF THE INVENTION
但是,在专利文献1和专利文献2所公开的方法中,需要用于在将封装基板分割成各个封装器件之前对封装基板的背面的进行磨削的磨削装置,存在浪费的问题。However, the methods disclosed in Patent Document 1 and
本发明是鉴于这种问题而完成的,其目的在于,提供一种封装基板的磨削方法,即使不具备磨削装置,也能够利用一台切削装置将封装基板的密封树脂层薄化到期望的厚度。The present invention has been made in view of such a problem, and an object of the present invention is to provide a method of grinding a package substrate capable of thinning the sealing resin layer of the package substrate to a desired thickness with a single cutting device even without a grinding device. thickness of.
根据本发明,提供一种封装基板的磨削方法,使用切削装置将封装基板的密封树脂层磨削至期望的厚度,其中,该切削装置包含:第1切削构件,该第1切削构件具有安装于第1主轴的末端的圆盘状的第1平磨削磨石;以及第2切削构件,该第2切削构件具有安装于第2主轴的末端的圆盘状的第2平磨削磨石,在该封装基板中,使具有多个电极的器件的正面与电极基板相对并隔着规定的间隔在该电极基板上配设有多个器件,且该封装基板具有利用树脂将配设在该电极基板上的多个器件的背面密封的所述密封树脂层,该封装基板的磨削方法的特征在于,具有如下的工序:保护部件粘贴工序,将该封装基板的正面侧粘贴到一体地安装在环状框架上的保护部件上;保持工序,利用切削装置的卡盘工作台对粘贴有该保护部件的该封装基板的正面侧进行吸引保持;第1磨削工序,在实施该保持工序之后,使该第1平磨削磨石与该封装基板的背面侧的该密封树脂层接触,并且使该第1平磨削磨石与该封装基板在磨削进给方向上相对移动,而将该封装基板的该密封树脂层磨削至第1厚度;以及第2磨削工序,在实施该第1磨削工序之后,使该第2平磨削磨石与该封装基板的背面侧的该密封树脂层接触,并且使该第2平磨削磨石与该封装基板在磨削进给方向上相对移动,而将该封装基板的该密封树脂层最终磨削至期望的厚度。According to the present invention, there is provided a method for grinding a package substrate, wherein the sealing resin layer of the package substrate is ground to a desired thickness using a cutting device, wherein the cutting device includes a first cutting member having a mounting a disk-shaped first flat grinding grindstone attached to the end of the first main shaft; and a second cutting member having a disk-shaped second flat grinding grindstone attached to the end of the second main shaft In the package substrate, the front surface of the device having a plurality of electrodes is opposed to the electrode substrate, and a plurality of devices are arranged on the electrode substrate with a predetermined interval, and the package substrate has a resin to be arranged on the electrode substrate. The sealing resin layer for sealing the back surfaces of a plurality of devices on an electrode substrate, and the method for grinding a packaging substrate, characterized by comprising a step of attaching a protective member to the front side of the packaging substrate to be integrally mounted. On the protective member on the annular frame; the holding step is to suck and hold the front side of the package substrate to which the protective member is attached by the chuck table of the cutting device; the first grinding step is performed after the holding step , the first flat grinding stone is brought into contact with the sealing resin layer on the back side of the package substrate, and the first flat grinding stone and the package substrate are relatively moved in the grinding feed direction, and the The sealing resin layer of the package substrate is ground to a first thickness; and a second grinding step, after the first grinding step is performed, the second flat grinding grindstone and the back surface side of the package substrate are ground. The sealing resin layer of the packaging substrate is finally ground to a desired thickness by relatively moving the second flat grinding stone and the packaging substrate in the grinding feed direction while the sealing resin layer is in contact with each other.
优选所述圆盘状的第1平磨削磨石和所述圆盘状的第2平磨削磨石由圆盘状的轮基座以及通过镀镍将磨粒固定在该轮基座的外周面上的电镀磨石层构成。Preferably, the disk-shaped first flat grinding stone and the disk-shaped second flat grinding stone are fixed to the outer periphery of the wheel base by means of a disk-shaped wheel base and nickel plating. It is composed of electroplated grindstone layer on the surface.
优选所述圆盘状的第2平磨削磨石的平均磨粒直径为所述圆盘状的第1平磨削磨石的平均磨粒直径以下。It is preferable that the average abrasive grain diameter of the said disk-shaped 2nd flat-grinding grindstone is equal to or less than the average abrasive-grain diameter of the said disk-shaped 1st flat-grinding grindstone.
在本发明中,在双主轴的切削装置的主轴上分别安装圆盘状第1平磨削磨石和圆盘状第2平磨削磨石,由于利用第1平磨削磨石将密封树脂层粗磨削至第1厚度,利用第2平磨削磨石将密封树脂层最终磨削至期望的厚度,因此即使不具备磨削装置,也能够利用一台切削装置高效地磨削封装基板的密封树脂层。In the present invention, the disk-shaped first flat grinding stone and the disk-shaped second flat grinding stone are respectively attached to the main shafts of the dual-spindle cutting device, and the sealing resin layer is sealed by the first flat grinding stone. Rough grinding to the first thickness, and final grinding of the sealing resin layer to the desired thickness by the second flat grinding stone, so even without a grinding device, the sealing substrate can be efficiently ground by a single cutting device. Seal the resin layer.
附图说明Description of drawings
图1是适于实施本发明的磨削方法的切削装置的立体图。FIG. 1 is a perspective view of a cutting device suitable for carrying out the grinding method of the present invention.
图2是第1切削单元的分解立体图。FIG. 2 is an exploded perspective view of the first cutting unit.
图3是第1和第2切削单元的示意性侧视图。3 is a schematic side view of the first and second cutting units.
图4是封装基板的俯视图。FIG. 4 is a plan view of the package substrate.
图5是封装基板的侧视图。FIG. 5 is a side view of the package substrate.
图6是示出保持部件粘贴工序的立体图。6 is a perspective view showing a holding member sticking process.
图7是说明粗磨削工序的剖视图。7 is a cross-sectional view illustrating a rough grinding step.
图8是说明最终磨削工序的剖视图。8 is a cross-sectional view illustrating a final grinding step.
标号说明Label description
2:切削装置;6:卡盘工作台;11:封装基板;16A:第1切削单元;16B:第2切削单元;29:密封树脂层;44:第1平磨削磨石;44B:第2平磨削磨石。2: Cutting device; 6: Chuck table; 11: Package substrate; 16A: First cutting unit; 16B: Second cutting unit; 29: Sealing resin layer; 44: First flat grinding stone; 44B:
具体实施方式Detailed ways
以下,参照附图详细地说明本发明的实施方式。参照图1,示出了适于实施本发明的封装基板的磨削方法的切削装置2的立体图。4是切削装置2的基座,在该基座4上借助未图示的切削进给机构以能够在X轴方向上往复运动的方式配设卡盘工作台6,并且该卡盘工作台6以能够旋转的方式配设。8是罩住切削进给机构的波纹罩。Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Referring to FIG. 1 , there is shown a perspective view of a
盒载置台10借助未图示的盒升降机(升降构件)以能够在铅垂方向(Z轴方向)上升降的方式配设于基座4。在盒载置台10上载置有用于收纳被加工物的盒12。The cassette mounting table 10 is arranged on the
在基座4的后方竖立设置有门型形状的第1柱14,第1切削单元16A和第2切削单元16B以能够在Y轴方向和Z轴方向上移动的方式安装于该第1柱14。第1和第2切削单元16A、16B包含安装于被旋转驱动的主轴的末端的圆盘状的平磨削磨石44、44B。A gate-shaped
如图2所示,第1切削单元16A包含以能够旋转的方式收纳在主轴外壳34中的主轴36,在主轴36的末端部安装有安装凸缘38,并由螺母40固定。进而,在安装凸缘38上安装圆盘状的平磨削磨石44,并由固定螺母42固定。As shown in FIG. 2 , the
如图3的示意性侧视图所示,在第1切削单元16A的主轴36的末端部安装有圆盘状的第1平磨削磨石44,在第2切削单元16B的主轴36B的末端部安装有圆盘状的第2平磨削磨石44B。本实施方式的切削装置2是将第1平磨削磨石44与第2平磨削磨石44B对置配设的对向双主轴的切削装置。As shown in the schematic side view of FIG. 3 , a disk-shaped first
这里,第1平磨削磨石44和第2平磨削磨石44B都是通过利用镀镍将金刚石磨粒电镀于轮基座的外周面而形成的。优选第2平磨削磨石44B的金刚石磨粒的平均磨粒直径为第1平磨削磨石44的金刚石磨粒的平均磨粒直径以下。并且,本实施方式的第1和第2平磨削磨石44、44B的宽度是15mm。Here, both the first
参照图4,示出封装基板11的俯视图。封装基板11具有例如矩形形状的电极基板(引脚框架)13,在电极基板13的由外周剩余区域15和非器件区域15a围绕的区域中,在图示的例子中存在3个器件区域17a、17b、17c。4, a top view of the
在各器件区域17a、17b、17c中划分形成有多个器件形成部23,该器件形成部23由以彼此垂直的方式纵横设置的第1和第2分割预定线21a、21b划分,在各个器件形成部23上形成有多个电极25。In each of the
各电极25彼此通过被模制的树脂而与电极基板13绝缘。通过对第1分割预定线21a和第2分割预定线21b进行切削,在其两侧出现各器件的电极25。The
如图5所示,在器件区域17a、17b、17c的各器件形成部23的背面经由DAF(DieAttach Film:粘片膜)35粘接有器件27,各器件27所具有的电极与电极25连接。As shown in FIG. 5 , the
并且,器件区域17a、17b、17c的各器件27被树脂密封,在各器件区域17a、17b、17c的背面形成有密封树脂层29。如图4所示,在电极基板13的四角形成有圆孔19。Further, each
下面对使用了以上述方式构成的切削装置2的本发明的封装基板的磨削方法进行说明。在本发明的封装基板的磨削方法中,首先,实施保护部件粘贴工序,将封装基板11的正面11a侧粘贴到保护部件上,该保护部件一体地安装在环状的框架F上。Next, the grinding method of the package board|substrate of this invention using the
即,如图6所示,将封装基板11的正面11a侧粘贴到作为保护部件的划片带T上,该划片带T的外周部被安装在环状框架F上。由此,封装基板11的密封树脂层29露出。That is, as shown in FIG. 6, the
在保护部件粘贴工序实施后,利用卡盘工作台6隔着划片带T对粘贴有作为保护部件的划片带T的封装基板11的正面11a侧进行吸引保持,利用夹具7夹紧并固定环状框架F。After the protective member sticking step is carried out, the
接着,如图7所示,实施粗磨削工序(第1磨削工序),使安装于第1切削单元16A的主轴36的进行高速旋转(例如20000rpm)的圆盘状的第1平磨削磨石44与封装基板11的背面11b侧的密封树脂层29接触,并且使第1平磨削磨石44与保持在卡盘工作台6上的封装基板11在磨削进给方向(X轴方向)上以规定的加工进给速度相对移动,利用第1平磨削磨石44将封装基板11的密封树脂层29磨削至第1厚度。这里,第1厚度是比封装基板11的最终厚度t1厚规定量的厚度。Next, as shown in FIG. 7 , a rough grinding step (first grinding step) is performed, and a disk-shaped first flat grinding that rotates at a high speed (for example, 20000 rpm) of the
粗磨削工序的磨削加工条件例如如下。The grinding conditions of the rough grinding step are, for example, as follows.
主轴36的转速:20000rpm
加工进给速度(磨削进给速度):50mm/sProcessing feed rate (grinding feed rate): 50mm/s
平磨削磨石44的指标量:7mm(重叠量为8mm)The index amount of the flat grinding grindstone 44: 7mm (the overlap amount is 8mm)
在粗磨削工序(第1磨削工序)实施后,如图8所示,实施最终磨削工序(第2磨削工序),使安装于第2切削单元16B的主轴36B的进行高速旋转(例如20000rpm)的圆盘状的第2平磨削磨石44B与实施了粗磨削工序的封装基板11的密封树脂层29接触,并且使平磨削磨石44B与保持在卡盘工作台6上的封装基板11在磨削进给方向(X轴方向)上以规定的加工进给速度相对移动,将封装基板11的密封树脂层29磨削至最终厚度t1。After the rough grinding step (first grinding step) is performed, as shown in FIG. 8 , the final grinding step (second grinding step) is performed, and the
最终磨削工序的加工条件例如如下。The processing conditions of the final grinding step are as follows, for example.
主轴转速:20000rpmSpindle speed: 20000rpm
加工进给速度(磨削进给速度):50mm/sProcessing feed rate (grinding feed rate): 50mm/s
平磨削磨石44B的指标量:7mm(重叠量为8mm)Standard amount of flat
另外,在本实施方式中,粗磨削工序和最终磨削工序都是通过将平磨削磨石44、44B固定在X轴方向上、且在X轴方向上以规定的加工进给速度对卡盘工作台6进行加工进给而实施的。In addition, in the present embodiment, both the rough grinding step and the final grinding step are performed by fixing the flat grinding
首先利用平均磨粒直径较粗的第1平磨削磨石44进行粗磨削直至接近最终厚度t1的厚度,利用平均磨粒直径较细的第2平磨削磨石44B将剩余的厚度最终磨削至最终厚度t1,因此能够高效地磨削密封树脂层29,并且能够漂亮地完成磨削面。First, rough grinding is performed by the first flat grinding
Claims (3)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-215188 | 2014-10-22 | ||
| JP2014215188A JP6448302B2 (en) | 2014-10-22 | 2014-10-22 | Package substrate grinding method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105551950A CN105551950A (en) | 2016-05-04 |
| CN105551950B true CN105551950B (en) | 2020-10-16 |
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| CN201510679594.8A Active CN105551950B (en) | 2014-10-22 | 2015-10-19 | Grinding method of package substrate |
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| JP (1) | JP6448302B2 (en) |
| KR (1) | KR20160047390A (en) |
| CN (1) | CN105551950B (en) |
| TW (1) | TWI665055B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR101762192B1 (en) * | 2016-05-25 | 2017-07-27 | 주식회사 케이엔제이 | Semiconductor package sliming apparatus and method of the same |
| KR101759125B1 (en) * | 2016-05-25 | 2017-07-19 | 주식회사 케이엔제이 | Semiconductor package sliming apparatus and method of the same |
| JP6680639B2 (en) * | 2016-07-27 | 2020-04-15 | 株式会社ディスコ | Processing method |
Citations (5)
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|---|---|---|---|---|
| CN1288799A (en) * | 1999-09-16 | 2001-03-28 | 住友特殊金属株式会社 | Method and apparatus for grinding magnetic components and method and apparatus for treatment of waste liquid |
| JP2004291157A (en) * | 2003-03-27 | 2004-10-21 | Jfe Ferrite Corp | Surface grinding apparatus and machining method using the same |
| JP2011181641A (en) * | 2010-03-01 | 2011-09-15 | Disco Corp | Method for processing package substrate |
| WO2014079834A1 (en) * | 2012-11-21 | 2014-05-30 | Hilti Aktiengesellschaft | Tool device with a spray arrangement for binding dust |
| CN103963174A (en) * | 2013-01-28 | 2014-08-06 | 陈少跃 | Cutting and grinding integrated machine |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5015493U (en) * | 1973-06-05 | 1975-02-18 | ||
| JP2006032471A (en) * | 2004-07-13 | 2006-02-02 | Disco Abrasive Syst Ltd | CSP substrate manufacturing method |
| JP2009130173A (en) * | 2007-11-26 | 2009-06-11 | Tokyo Seimitsu Co Ltd | Dicing apparatus |
| JP2010017826A (en) * | 2008-07-14 | 2010-01-28 | Toyobo Co Ltd | Thin blade grinding wheel and dicing method |
| KR101347026B1 (en) * | 2012-03-21 | 2014-01-07 | 주식회사 케이엔제이 | Semiconductor package sliming apparatus and method of the same |
-
2014
- 2014-10-22 JP JP2014215188A patent/JP6448302B2/en active Active
-
2015
- 2015-09-01 TW TW104128828A patent/TWI665055B/en active
- 2015-09-24 KR KR1020150135535A patent/KR20160047390A/en not_active Ceased
- 2015-10-19 CN CN201510679594.8A patent/CN105551950B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1288799A (en) * | 1999-09-16 | 2001-03-28 | 住友特殊金属株式会社 | Method and apparatus for grinding magnetic components and method and apparatus for treatment of waste liquid |
| JP2004291157A (en) * | 2003-03-27 | 2004-10-21 | Jfe Ferrite Corp | Surface grinding apparatus and machining method using the same |
| JP2011181641A (en) * | 2010-03-01 | 2011-09-15 | Disco Corp | Method for processing package substrate |
| CN102194704A (en) * | 2010-03-01 | 2011-09-21 | 株式会社迪思科 | Package substrate processing method |
| WO2014079834A1 (en) * | 2012-11-21 | 2014-05-30 | Hilti Aktiengesellschaft | Tool device with a spray arrangement for binding dust |
| CN103963174A (en) * | 2013-01-28 | 2014-08-06 | 陈少跃 | Cutting and grinding integrated machine |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2016078218A (en) | 2016-05-16 |
| KR20160047390A (en) | 2016-05-02 |
| TW201628776A (en) | 2016-08-16 |
| CN105551950A (en) | 2016-05-04 |
| JP6448302B2 (en) | 2019-01-09 |
| TWI665055B (en) | 2019-07-11 |
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