CN105785639A - Low-reflection metal structure, display panel and manufacturing method thereof - Google Patents

Abstract

The invention provides a low-reflection metal structure, a display panel and a manufacturing method thereof, wherein the method for manufacturing the low-reflection metal layer comprises the following steps. And forming a low reflection layer on and/or under the metal layer, wherein the low reflection layer comprises a metal oxide layer or a metal oxynitride layer. A patterning process is performed on the low reflection layer and the metal layer to simultaneously form a patterned low reflection layer and a patterned metal layer.

Description

Low reflection metal structure, display panel and manufacturing method thereof

technical field

The invention relates to a low-reflection metal structure and a manufacturing method thereof, in particular to a display panel with a low-reflection metal structure and a manufacturing method thereof.

Background technique

The liquid crystal display panel has become the mainstream product of the current display due to its characteristics of light and thin appearance, low power consumption and wide application range. Because the metal structure in the LCD panel, such as wires, will reflect the light from the outside, the user will see the internal wires of the LCD panel when using the LCD panel. Therefore, the current common practice is to set a black matrix layer in the LCD panel. In order to prevent the wire from reflecting the external light from happening. However, the arrangement of the black matrix layer will reduce the aperture ratio of the liquid crystal display panel, resulting in a decrease in display brightness.

Contents of the invention

One of the objectives of the present invention is to provide a low-reflection metal structure, a display panel and a manufacturing method thereof, so as to reduce the visibility of the metal structure and increase the aperture ratio of the display panel.

To achieve the above objectives, the present invention provides a method for fabricating a low-reflection metal structure. First, a first substrate is provided. Then, a metal layer is formed on the first substrate. Next, a low reflection layer is formed on and/or under the metal layer, wherein the low reflection layer includes a metal oxide layer or a metal oxynitride layer. Subsequently, a patterning process is performed on the low reflection layer and the metal layer to form a patterned low reflection layer and a patterned metal layer.

Wherein, the step of forming the low reflection layer on and/or under the metal layer includes performing a reactive sputtering process step.

Wherein, the method for manufacturing a low-reflection metal structure further includes:

When forming the low reflection layer on and/or under the metal layer, an interface layer is simultaneously formed between the first substrate and the patterned low reflection layer, or between the metal layer and the low reflection layer; and

The interface layer is also patterned by using the patterning process.

Wherein, the material of the interface layer includes metal oxide or metal oxynitride.

Wherein, when the low reflection layer is formed on the metal layer, the patterned low reflection layer only covers the top surface of the patterned metal layer but does not cover the side surfaces of the patterned metal layer.

Wherein, the thickness of the patterned low reflection layer is between between.

Wherein, the patterned metal layer has a stacked structure, including a bottom metal layer and a top metal layer located on the bottom metal layer.

Wherein, the thickness of the bottom metal layer is between between, and the thickness of the top metal layer is between between.

Wherein, the reflectivity of the patterned low reflection layer is between 2% and 20%.

Wherein, the atomic percentage of oxygen in the metal oxide layer is between 5% and 50%.

Wherein, the metal oxide layer includes a molybdenum oxide layer or a molybdenum tantalum oxide layer.

Wherein, the atomic percentage of oxygen in the metal oxynitride layer is between 5% and 50%, and the content of nitrogen in the metal oxynitride layer is between 1% and 10%.

Wherein, the metal oxynitride layer includes a molybdenum oxynitride layer or a molybdenum tantalum oxynitride layer.

Wherein, there is an included angle between the side surface and the bottom surface of the patterned metal layer, and the included angle is between 10 degrees and 80 degrees.

Wherein, the low reflection layer is an amorphous phase.

Wherein, it also includes forming a thin film layer on the first substrate before forming the metal layer and the low reflection layer, and the thin film layer is a single layer or multiple layers of silicon thin film, silicon oxide compound thin film or silicon nitride compound thin film. layer structure.

To achieve the above purpose, the present invention further provides a method for manufacturing a display panel. First, the above-mentioned method of fabricating a low-reflection metal structure is performed. Then, a plurality of pixel structures are formed on the first substrate. Next, a second substrate is formed on the first substrate. Subsequently, a display medium layer is formed between the first substrate and the second substrate.

To achieve the above purpose, the present invention further provides a low-reflection metal structure, including a first substrate, a patterned metal layer, and a patterned low-reflection layer. The patterned metal layer is disposed on the first substrate. The patterned low reflection layer is disposed on and/or below the patterned metal layer.

Wherein, when the patterned low-reflection layer is disposed on the patterned metal layer, the patterned low-reflection layer only covers the top surface of the patterned metal layer and does not cover the side surfaces of the patterned metal layer.

Wherein, the thickness of the patterned low reflection layer is between between.

Wherein, the patterned metal layer has a laminated structure, which includes a bottom metal layer and a top metal layer located on the bottom metal layer.

Wherein, the thickness of the bottom metal layer is between between, and the thickness of the top metal layer is between between.

Wherein, the reflectivity of the patterned low reflection layer is between 2% and 20%.

Wherein, the patterned low reflection layer includes a metal oxide layer or a metal oxynitride layer.

Wherein, the atomic percentage of oxygen in the metal oxide layer is between 5% and 50%.

Wherein, the metal oxide layer includes a molybdenum oxide layer or a molybdenum tantalum oxide layer.

Wherein, the atomic percentage of oxygen in the metal oxynitride layer is between 5% and 50%, and the content of nitrogen in the metal oxynitride layer is between 1% and 10%.

Wherein, the metal oxynitride layer includes a molybdenum oxynitride layer or a molybdenum tantalum oxynitride layer.

Wherein, there is an included angle between the side surface and the bottom surface of the patterned metal layer, and the included angle is between 10 degrees and 80 degrees.

Wherein, an interface layer is further included, disposed between the first substrate and the patterned low-reflection layer, or between the patterned metal layer and the patterned low-reflection layer.

Wherein, the material of the interface layer includes metal oxide or metal oxynitride.

Wherein, the patterned low reflection layer is an amorphous phase.

To achieve the above object, the present invention further provides a display panel, comprising the above-mentioned low-reflection metal structure, a plurality of pixel structures, a second substrate, and a display medium layer. Multiple pixel structures are disposed on the first substrate. The second substrate is disposed on the first substrate. The display medium layer is disposed between the first substrate and the second substrate.

Wherein, the display panel includes a color filter disposed on the first substrate or the second substrate.

Wherein, the patterned metal layer includes at least one of a gate line, a gate, a common line, a data line, a source or a drain.

In the low-reflection metal structure, display panel and manufacturing method thereof of the present invention, a patterned low-reflection layer is provided on and/or under the patterned metal layer, so that the patterned metal layer is shielded to reduce reflection of external light, thereby replacing the prior art black matrix layer. Since the display panel of the present invention and its manufacturing method do not need to be provided with a black matrix layer, compared with the display panel of the prior art, the aperture ratio of the display panel can be effectively improved and a photomask process can be reduced at the same time, thereby reducing the complexity of the process. Degree and process cost.

Description of drawings

1 to 4 are schematic diagrams of a method for fabricating a low-reflection metal structure according to a first embodiment of the present invention.

FIG. 5 is a schematic cross-sectional view of a low-reflection metal structure according to a second embodiment of the present invention.

FIG. 6 is a schematic cross-sectional view of a low-reflection metal structure according to a third embodiment of the present invention.

FIG. 7A is a schematic cross-sectional view of a low-reflection metal structure according to a fourth embodiment of the present invention.

FIG. 7B is a transmission electron microscope image of the metal layer and the first substrate without an interface layer.

FIG. 7C is a transmission electron microscope image of an interface layer between the metal layer and the first substrate.

FIG. 7D shows the black screen color displayed by the display with the structure shown in FIG. 7B .

FIG. 7E shows the black screen color displayed by the display with the structure shown in FIG. 7C.

FIG. 7F is a graph showing the relationship between the structure shown in FIG. 7B and the reflectivity at different wavelengths.

FIG. 7G is a graph showing the relationship between the structure shown in FIG. 7C and the reflectivity at different wavelengths.

7H is a schematic cross-sectional view of a variant embodiment of the low-reflection metal structure of the fourth embodiment of the present invention.

FIG. 8 is a schematic cross-sectional view of a low-reflection metal structure according to a fifth embodiment of the present invention.

FIG. 9 is a top view of a display panel according to an embodiment of the present invention.

Fig. 10 is a schematic cross-sectional view along line A-A' in Fig. 9 .

Fig. 11 is a schematic cross-sectional view along the line B-B' in Fig. 9 .

Among them, reference signs:

C contact window CE common electrode

CH channel layer CL common line

D drain D1, D2, D3 thickness

DL data line G gate

GI gate insulating layer GL gate line

M display medium layer P pixel structure

PE pixel electrode R reactive sputtering process

S source S1 first substrate

S2 second substrate TFT thin film transistor

θ included angle 10 metal layers

12 Patterned Metal Layer 12B Bottom Metal Layer

12L bottom surface 12S side surface

12T top metal layer 12U top surface

14,14' interface layer 20,20' low reflection layer

22,22' patterned low reflection layer 30 protective layer

24 film layers

detailed description

In order for those skilled in the art to have a better understanding of the present invention, preferred embodiments of the present invention are specifically cited below, together with the accompanying drawings, to describe in detail the composition and desired effects of the present invention.

Please refer to FIG. 1 to FIG. 4 . FIG. 1 to FIG. 4 are schematic diagrams of a method for manufacturing a low-reflection metal structure according to a first embodiment of the present invention. As shown in FIG. 1 , firstly, a first substrate S1 is provided, and the material of the first substrate S1 can be plastic, glass, or other suitable materials. Next, as shown in FIG. 2, a metal layer 10 is formed on the first substrate S1. The metal layer 10 is preferably formed of a material with better conductivity, such as a metal material. For example, the metal material can include aluminum, copper , at least one of silver, titanium, molybdenum, tantalum, niobium or neodymium, a metal composite layer of the above materials, an alloy of the above materials, or other suitable metal conductive materials. In this embodiment, the metal layer 10 is a single metal layer, but the present invention is not limited thereto. The metal layer 10 may also be a laminated structure of metal materials, or a laminated structure of other materials and metal materials. Then, as shown in FIG. 3 , a low reflection layer 20 is formed on the metal layer 10 , wherein the low reflection layer 20 includes a metal oxide layer or a metal oxynitride layer. Subsequently, as shown in FIG. 4 , a patterning process is performed on the low reflection layer 20 and the metal layer 10 to form a patterned low reflection layer 22 and a patterned metal layer 12 . To be precise, the patterned low-reflection layer 22 can be selectively formed and cover the top surface 12U of the patterned metal layer 12, but not cover the side surfaces of the patterned metal layer 12, but the present invention is not limited thereto. In an example, the patterned low-reflection layer 22 can also be formed on the bottom surface 12L of the patterned metal layer 12 (FIG. 4 does not show the patterned low-reflection layer 22 disposed under the bottom surface 12L of the patterned metal layer 12), Alternatively, both the top surface 12U and the bottom surface 12L of the patterned metal layer 12 are covered with the patterned low reflection layer 22 .

Specifically, the step of forming the low reflection layer 20 on the metal layer 10 includes performing a physical vapor deposition (Physical Vapor Deposition, PVD) process, including reactive sputtering (reactive sputtering) and non-reactive sputtering (non-reactive sputtering). When the plasma bombards the target, a specific reactive gas is introduced into the reaction chamber, so that the reactive gas reacts with the target to form the low reflection layer 20 covering the metal layer 10 . When the reactant gas passed in is oxygen, the low reflective layer 20 of the metal oxide layer will be formed; when the reactant gas passed in is a mixed gas of nitrogen and oxygen, the low reflective layer of the metal oxynitride layer will be formed 20. The metal material in the metal oxide layer or the metal oxynitride layer may include at least one of tantalum, silver, titanium, molybdenum, zinc or niobium, alloys of the above materials, or other suitable metal materials. For example, the metal oxide layer may include a molybdenum oxide layer or a molybdenum tantalum oxide layer, and the content of oxygen in the metal oxide layer is between 5% and 50%, but the invention is not limited thereto. The metal oxynitride layer may include a molybdenum oxynitride layer or a molybdenum tantalum oxynitride layer, and the atomic percentage (atomicpercent) content of oxygen in the metal oxynitride layer is between 5% and 50%, and the metal oxynitride layer The content of nitrogen in the material layer is between 1% and 10%, but the invention is not limited thereto. In addition, since the low-reflection layer 20 can be formed by physical vapor deposition process, the structure of the low-reflection layer 20 may also be an amorphous phase structure in addition to a crystalline phase. Compared with the crystalline phase, the low reflection layer 20 of the amorphous phase has a homogeneous structure (homogeneous structure), and better durability (durablity), which can prevent the oxidation of the metal layer 10 below it, and make the metal layer 10 and the low-reflection layer 20 are not easy to be damaged in the subsequent process and cause their properties to change.

Please continue to refer to FIG. 4 , there is an included angle θ between the side surface 12S and the bottom surface 12L of the patterned metal layer 12 , and the included angle θ is between 10 degrees and 80 degrees. When the included angle θ is larger, the side surface 12S of the patterned metal layer 12 is steeper, so in the viewing direction of vertical projection, it is less easy to observe the light reflected by the patterned metal layer 12 and the side surface 12S, so that the user The patterned metal layer 12 inside the display panel cannot be detected, achieving a good light-shielding effect. Furthermore, since the patterned low-reflection layer 22 is produced after the low-reflection layer 20 and the metal layer 10 are patterned simultaneously, the angle θ can be adjusted through the patterning process, for example, between The angle θ can vary due to the thickness of the patterned metal layer 12 . Compared with the patterned low-reflection layer produced by heating process, the patterned low-reflection layer is formed after the metal layer is patterned, so the patterned low-reflection layer cannot adjust the pattern during its formation The angle of the included angle of the metallization layer, and the low-reflection layer 20 and the metal layer 10 of the present invention are patterned at the same time, so the size of the included angle θ can be adjusted by changing the thickness of the low-reflection layer 20 and the metal layer 10 , so that the low-reflection metal structure meets the specifications required by subsequent processes. In addition, compared with the prior art, the low-reflection metal structure of the present invention can be formed in a single patterning process, so the method for manufacturing the low-reflection metal structure of the present invention has the effect of reducing process complexity and process cost.

In addition, the patterned low-reflection layer 22 is obtained after the low-reflection layer 20 undergoes a patterning process, so the patterned low-reflection layer 22 includes a metal oxide layer or a metal oxynitride layer, wherein the metal oxide layer and the metal oxynitride layer Both layers have good low reflection effect. For example, the oxygen content in the metal oxide layer has an atomic percentage between 5% and 50%, but the invention is not limited thereto. The content of oxygen in the metal oxynitride layer is between 5% and 50%, and the content of nitrogen in the metal oxynitride layer is between 1% and 10%, but the invention is not limited thereto. Furthermore, properly controlling the content of oxygen in the metal oxide layer or metal oxynitride layer and adjusting the size of the included angle θ can make the patterned low-reflection layer 22 have a better low-reflection effect, so the patterned metal layer 12 It can shield and reduce the reflection of external light, so it can replace the method of arranging a black matrix layer in the prior art.

The following will introduce display panels and manufacturing methods of other embodiments of the present invention in sequence, and in order to facilitate the comparison of the differences between the embodiments and simplify the description, the same symbols are used to mark the same components in the following embodiments, And the description will mainly focus on the differences between the embodiments, and the repeated parts will not be repeated.

Please refer to Figure 5. FIG. 5 is a schematic cross-sectional view of a low-reflection metal structure according to a second embodiment of the present invention. As shown in FIG. 5 , the difference between this embodiment and the first embodiment is that, in this embodiment, the patterned metal layer 12 has a stacked structure, including a bottom metal layer 12B and a top metal layer 12T located on the bottom metal layer. 12B, wherein the top metal layer 12T is preferably formed of a material with better conductivity such as a metal material, and the metal material may include at least one of aluminum, copper, silver, titanium, molybdenum, tantalum, niobium or neodymium, the above-mentioned material alloys or other suitable metallic conductive materials. The bottom metal layer 12B is preferably a metal material that helps to attach the top metal layer 12T to the first substrate S1. The above metal material may include at least one of aluminum, silver, titanium, molybdenum, tantalum, niobium or neodymium, Alloys of the above materials or other suitable metal materials. For example, the top metal layer 12T can be copper (Cu), aluminum (Al) or aluminum neodymium alloy (AlNd), and the bottom metal layer 12B can be molybdenum (Mo) to increase the adhesion of the top metal layer 12T, but this The invention is not limited thereto. In addition, the thickness D1 of the bottom metal layer 12B is between between, and the thickness D2 of the top metal layer 12T is between Between, but the present invention is not limited thereto, and the thickness D3 of the patterned low reflection layer 22 is between Between, but the present invention is not limited thereto, and its thickness can be changed according to design requirements. In addition, the reflectivity of the patterned low-reflection layer 22 varies with its thickness, when the thickness D3 of the patterned low-reflection layer 22 is between Between, the reflectivity (under visible light) of the patterned low-reflection layer 22 can be between 2% to 20%, so the patterned low-reflection layer 22 can effectively absorb light and reduce the reflection of the patterned metal layer 12 effect, so the patterned low reflection layer 22 can be used as a light-shielding pattern layer and further replace the black matrix layer.

Please refer to FIG. 6 , which is a schematic cross-sectional view of a low-reflection metal structure according to a third embodiment of the present invention. As shown in Figure 6, the difference between this embodiment and the second embodiment is that when the low reflection layer 20 is formed on the metal layer 10, the flow rate of oxygen can be controlled synchronously, and the metal layer 10 and the low reflection layer can be formed at the same time. The layers 20 self-react to form an extremely thin interface layer (interlayer) 14, and then use the patterning process to pattern the metal layer 10, the low reflection layer 20 and the interface layer 14 to form a patterned metal layer. Layer 12, patterned low reflection layer 22, and patterned interface layer 14. The material of the interface layer 14 may include metal oxide or metal oxynitride, and the metal material in the metal oxide layer or metal oxynitride layer may include at least one of tantalum, molybdenum, niobium, indium, tin, zinc, or gallium. or its alloys, or other suitable metal materials, but the present invention is not limited thereto. For example, the metal oxide layer may include indium tin oxide (ITO) or indium gallium zinc oxide (IGZO). Wherein, the existence of the interface layer 14 helps to absorb light, thus further reducing the reflection effect of the patterned metal layer 12 , so that the patterned low reflection layer 22 can exert a better light-shielding effect and further replace the black matrix layer.

In addition, between the low reflection layer 20 and the metal layer 10, a multi-layer structure (not shown) stacked by metal oxides or metal oxynitrides can be formed to further reduce the patterned metal layer 12. The effect of reflectivity. For example, after the metal layer 10 is formed, another layer of metal oxide layer or metal oxynitride layer or a multi-layer structure formed by stacking metal oxide or metal oxynitride can be deposited (not shown in the figure) On the metal layer 10, then continue to form the low reflection layer 20 on the metal oxide layer or the metal oxynitride layer, and then use the patterning process to form the metal layer 10, the low reflection layer 20, the metal oxide layer or The metal oxynitride layer and the interface layer 14 are patterned. Because the multi-layer structure formed by stacking metal oxide or metal oxynitride has the same effect of reducing the reflection of the patterned metal layer 12 as the interface layer 14, it can further reduce the reflection of the patterned metal layer 12, so the pattern can be made The low reflection layer 22 exerts a better light-shielding effect and further replaces the black matrix layer.

Please refer to FIG. 7A , which is a schematic cross-sectional view of a low-reflection metal structure according to a fourth embodiment of the present invention. The difference between the present embodiment and the third embodiment is that the present embodiment forms the low reflective layer 20' under the metal layer 10, that is, the low reflective layer 20' is formed before the metal layer 10 is formed, and the low reflective layer 20' is formed before the formation of the low reflective layer 10. In the reflective layer 20', the flow rate of oxygen can be optionally adjusted to make the low reflective layer 20' react with the first substrate S1 to form a very thin interface layer 14', and then use the patterning process The metal layer 10, the low reflection layer 20' and the interface layer 14' are patterned together to form the patterned metal layer 12, the patterned low reflection layer 22' and the patterned interface layer 14', as shown in FIG. 7A . The material of the patterned low reflection layer 22' is preferably the same as that of the patterned low reflection layer 22, and the material of the interface layer 14' is preferably the same as that of the interface layer 14, but the present invention is not limited thereto. In a variant embodiment, when the low-reflection layer 20' is formed under the metal layer 10, an interface layer may be selectively not formed between the metal layer 10 and the low-reflection layer 20'. In another variant embodiment, the present invention can form the low-reflection layer 20' before forming the metal layer 10, and when forming the low-reflection layer 20', the low-reflection layer can be selectively controlled by controlling the flow of oxygen so that the low-reflection layer 20 ′ reacts with the first substrate S1 to form an extremely thin interface layer 14 , as shown in FIG. 7C .

Please refer to FIG. 7B to FIG. 7G, FIG. 7B is a transmission electron microscope (Transmission Electron Microscopy; TEM) image of the interface layer 14 between the metal layer 10 and the first substrate S1, and FIG. 7C is a metal layer 10 and the first substrate S1 There is a transmission electron microscope image of the interface layer 14 in between. Figure 7D and Figure 7E are the black screen state shown by the display with the structure shown in Figure 7B and the structure shown in Figure 7C respectively, and Figure 7F is the state shown in Figure 7B The relationship between the structure and the reflectance at different wavelengths (visible light band), and FIG. 7G is the relationship between the structure shown in FIG. 7C and the reflectance at different wavelengths (visible light band). Comparing FIG. 7D and FIG. 7E, it can be found that if there is no interface layer 14 in the structure (as shown in FIG. 7B ), a good light-shielding effect (as shown in FIG. 7D ) cannot be achieved, so the state displayed when the screen is black cannot appear as The black shown in FIG. 7E may appear reddish, for example. In addition, it can be known from the results of FIG. 7F and FIG. 7G that if there is an interface layer 14 (structure shown in FIG. 7C ), in the long wavelength range (for example, above about 600 nm), its reflectivity will be higher than that without interface layer 14 ( The structure shown in Figure 7B) is low, so it has a better light-shielding effect.

Please refer to FIG. 7H . FIG. 7H is a schematic cross-sectional view of a variant embodiment of the low-reflection metal structure of the fourth embodiment of the present invention. Under the framework of the low-reflection metal structure of the fourth embodiment of the present invention, even the chemical vapor deposition (Chemical Vapor Deposition, CVD) process can be used to form the thin film layer 24 on the first substrate S1 first, and then form the low-reflection layer 20' and the metal layer 10, wherein the thin film layer 24 can be a single-layer or multi-layer structure of a silicon film, a silicon oxide compound film or a silicon nitride compound film, for example: silicon (Si), silicon oxide (SiOx) or silicon nitride (SiNx) , such as the thin film layer 24 shown in FIG. 7H, but the present invention is not limited thereto, and then forms the low reflection layer 20' or the metal layer 10, which can further reduce the patterned low reflection layer 22' or the patterned metal layer. 12 reflections, and improve the uniformity of the overall low-reflection metal structure (Uniformity), so it can play a better shading effect. It should be noted that since the thin film layer 24 does not need to be patterned, the formation of the thin film layer 24 will not cause process complexity.

Please refer to FIG. 8 , which is a schematic cross-sectional view of a low-reflection metal structure according to a fifth embodiment of the present invention. As shown in Figure 8, the difference between this embodiment and the third embodiment is that when the low reflection layer 20 is formed on the metal layer 10, the low reflection layer 20' is formed under the metal layer 10 at the same time, and by controlling the oxygen At the same time, it reacts between the metal layer 10 and the low reflection layer 20 and between the metal layer 10 and the low reflection layer 20' to form extremely thin interface layers 14, 14', and then uses the patterning process to The metal layer 10, the low reflection layers 20, 20' and the interface layers 14, 14' are patterned to form the patterned metal layer 12, the patterned low reflection layers 22, 22' and the patterned interface layers 14, 14'. The material of the low reflection layer 20' is preferably the same as that of the low reflection layer 20, and the material of the interface layer 14' is preferably the same as that of the interface layer 14, but the present invention is not limited thereto. Because the interface layer 14' and the interface layer 14 also have the effect of reducing the reflection of the patterned metal layer 12, it can further reduce the reflection of the patterned metal layer 12, so that the patterned low reflection layer 22 can play a better light-shielding effect and further Replaces the black matrix layer.

Please refer to FIG. 9 to FIG. 11 and also refer to FIG. 2 to FIG. 6 . FIG. 9 is a top view of a display panel according to an embodiment of the present invention. Fig. 10 is a schematic cross-sectional view along line A-A' in Fig. 9 . Fig. 11 is a schematic cross-sectional view along the line B-B' in Fig. 9 . As shown in FIGS. 9 to 11, this embodiment discloses a method for manufacturing a display panel, including performing the aforementioned steps of manufacturing a low-reflection metal structure to form a patterned metal layer 12 and patterns on and/or under it. Low reflection layer 22 is reduced, and a plurality of pixel structures P are formed on the first substrate S1. The patterned low-reflection layer 22 of FIG. 10 and FIG. 11 is arranged on the top of the patterned metal layer 12, which is an exemplary embodiment of the present invention, and the present invention is not limited thereto. The patterned low-reflection layer 22 is arranged on the patterned metal layer 12. The top and/or bottom of layer 12 are within the scope of the present invention. Specifically, the patterned metal layer 12 may include at least one of a gate line GL, a gate G, a common line CL, a data line DL, a source S, a drain D, or any lines. For example, when the patterned metal layer 12 is the gate line GL, the gate G and the common line CL, the patterned low reflection layer 22 will be formed thereon; when the patterned metal layer 12 is the data line DL, the source S, the drain D or any line, a patterned low reflection layer 22 is formed thereon. The patterned metal layer 12 of the present invention is not limited to the above components but can be any metal structure on the first substrate S1. In this embodiment, the gate line GL, the gate G, the common line CL, the data line DL, the source S, the drain D or any other lines have a patterned low reflection layer 22, so the gate line GL, the gate The electrode G, the common line CL, the data line DL, the source S, the drain D or any other lines will be shielded and will not reflect external light.

In this embodiment, the pixel structure P may include a thin film transistor TFT, a common electrode CE and a pixel electrode PE, wherein the thin film transistor TFT includes a gate G, a source S, a drain D, a gate insulating layer GI and a channel layer CH. In this embodiment, the thin film transistor TFT is a bottom gate thin film transistor, but the present invention is not limited thereto, and the thin film transistor TFT may also be a top gate thin film transistor or other types of thin film transistors. Specifically, the gate G of the thin film transistor TFT is electrically connected to the gate line GL, and the source S of the thin film transistor TFT is electrically connected to the data line DL. In addition, the pixel electrode PE is electrically connected to the drain D of the thin film transistor TFT through the contact window C. In this embodiment, a gate insulating layer GI is disposed between the gate line GL and the data line DL and between the common line CL and the data line DL to electrically insulate the gate line GL from the data line DL and the common line CL. with the data line DL. In addition, a protection layer 30 is also provided between the pixel electrode PE and the common electrode CE. In addition, when the present invention provides a light source for a display panel, the order in which the light passes through the display panel may be: first pass through the first substrate S1 with a thin film transistor TFT and then pass through the second substrate S2; or first pass through the second substrate S2 and then pass through the The first substrate S1 of the thin film transistor TFT. In detail, in this embodiment, the thin film transistor TFT is fabricated on a substrate through which light passes first, but the invention is not limited thereto. In another embodiment of the present invention, the light can first pass through the second substrate S2, and then pass through the first substrate S1 with thin film transistors TFT, wherein the lines on the first substrate S1 have a patterned low-reflection layer 22 structure, so it can The optical properties of the display panel can be improved, and the goal of a full-plane display panel can be achieved, that is, the display panel of the present invention can be a display panel without borders.

Subsequently, a second substrate S2 is formed on the first substrate S1. Then, a display medium layer M is formed between the first substrate S1 and the second substrate S2. The material of the second substrate S2 can be plastic, glass, or other suitable materials. A color filter layer (not shown), such as a COA (color filter on array) structure, may be provided on the first substrate S1 or the second substrate S2, and the color filter layer may include a plurality of color filter patterns (not shown), for example: Red, green and blue color filter patterns, but the invention is not limited thereto. The display medium layer M is sealed between the first substrate S1 and the second substrate S2, and the display medium layer M may include a liquid crystal layer, an organic light emitting diode (OLED) component or an electrophoresis, and the application range may also cover touch control type display or 3D stereoscopic display, etc., but the present invention is not limited thereto. In this embodiment, the common electrode CE is disposed on the second substrate S2, but the invention is not limited thereto, and the common electrode CE can be selectively disposed on one of the second substrate S2 or the first substrate S1.

By forming the patterned low-reflection layer 22 on the patterned metal layer 12, the patterned low-reflection layer 22 can replace the original shielding gate line GL, gate G, common line CL, data line DL, source S or drain The black matrix layer of pole D, so the user cannot observe the metal wiring inside the display panel. Therefore, compared with the display panel of the prior art, the aperture ratio of the display panel of this embodiment can be effectively improved, and the method for manufacturing a display panel provided by this embodiment can save the step of manufacturing a black matrix layer, thereby reducing the The effect of process cost.

To sum up, in the low-reflection metal structure, display panel and manufacturing method thereof of the present invention, a patterned low-reflection layer is arranged on the patterned metal layer, so that the patterned metal layer is shielded and does not reflect external light. This reduces the visibility of the metal structure and replaces the prior art black matrix layer. Since the display panel of the present invention and its manufacturing method do not need to be provided with a black matrix layer, compared with the display panel of the prior art, the aperture ratio of the display panel can be effectively improved and a photomask process can be reduced at the same time, thereby reducing the complexity of the process. Degree and process cost.

Certainly, the present invention also can have other various embodiments, without departing from the spirit and essence of the present invention, those skilled in the art can make various corresponding changes and deformations according to the present invention, but these corresponding changes All changes and modifications should belong to the protection scope of the claims of the present invention.

Claims (36)

1. A method for making a low-reflection metal structure, comprising: providing a first substrate; forming a metal layer on the first substrate; forming a low reflection layer on and/or under the metal layer, the low reflection layer comprising a metal oxide layer or a metal oxynitride layer; and A patterning process is performed on the low reflection layer and the metal layer to form a patterned low reflection layer and a patterned metal layer. 2. The method for manufacturing a low-reflection metal structure according to claim 1, wherein the step of forming the low-reflection layer on and/or under the metal layer comprises performing a reactive sputtering process step. 3. The method for making a low-reflection metal structure according to claim 2, further comprising: When forming the low reflection layer on and/or under the metal layer, an interface layer is simultaneously formed between the first substrate and the patterned low reflection layer, or between the metal layer and the low reflection layer; and The interface layer is also patterned by using the patterning process. 4. The method for manufacturing a low-reflection metal structure according to claim 3, wherein the material of the interface layer comprises metal oxide or metal oxynitride. 5. The method of making a low-reflection metal structure according to claim 1, wherein when the low-reflection layer is formed on the metal layer, the patterned low-reflection layer only covers the top surface of the patterned metal layer and The side surface of the patterned metal layer is not covered. 6. The method for making a low-reflection metal structure according to claim 1, wherein the thickness of the patterned low-reflection layer is between between. 7 . The method of manufacturing a low-reflection metal structure according to claim 1 , wherein the patterned metal layer has a laminated structure, comprising a bottom metal layer and a top metal layer on the bottom metal layer. 8. The method for making a low-reflection metal structure according to claim 7, wherein the bottom metal layer has a thickness between between, and the thickness of the top metal layer is between between. 9. The method for manufacturing a low-reflection metal structure according to claim 1, wherein the reflectance of the patterned low-reflection layer is between 2% and 20%. 10 . The method for manufacturing a low-reflection metal structure according to claim 1 , wherein the content of oxygen in the metal oxide layer is between 5% and 50 atomic percent. 11 . 11. The method for manufacturing a low-reflection metal structure according to claim 1, wherein the metal oxide layer comprises a molybdenum oxide layer or a molybdenum tantalum oxide layer. 12. The method for manufacturing a low-reflection metal structure according to claim 1, wherein the oxygen content in the metal oxynitride layer is between 5% and 50% atomic percent, and the metal oxynitride layer The content of nitrogen in the medium is between 1% and 10%. 13. The method of manufacturing a low-reflection metal structure according to claim 1, wherein the metal oxynitride layer comprises a molybdenum oxynitride layer or a molybdenum tantalum oxynitride layer. 14. The method of manufacturing a low-reflection metal structure according to claim 1, wherein there is an included angle between the side surface and the bottom surface of the patterned metal layer, and the included angle is between 10° and 80° between. 15. The method for manufacturing a low-reflection metal structure according to claim 1, wherein the low-reflection layer is an amorphous phase. 16. The method of manufacturing a low-reflection metal structure according to claim 1, further comprising forming a thin film layer on the first substrate before forming the metal layer and the low-reflection layer, and the thin film The layer is a single-layer or multi-layer structure of silicon thin film, silicon oxide compound thin film or silicon nitride compound thin film. 17. A method for manufacturing a display panel, comprising: Carrying out the method for making the low-reflection metal structure described in claim 1; forming a plurality of pixel structures on the first substrate; forming a second substrate on the first substrate; and A display medium layer is formed between the first substrate and the second substrate. 18. The method for manufacturing a display panel according to claim 17, wherein the patterned metal layer comprises a gate line, a gate, a common line, a data line, a source or a drain at least one of them. 19. A low reflective metal structure, comprising: a first substrate; a patterned metal layer disposed on the first substrate; and A patterned low reflection layer is arranged on and/or under the patterned metal layer. 20. The method for manufacturing a low-reflection metal structure according to claim 19, wherein when the patterned low-reflection layer is disposed on the patterned metal layer, the patterned low-reflection layer only covers the patterned metal layer The top surface of the patterned metal layer does not cover the side surface. 21. The low-reflection metal structure according to claim 19, wherein the thickness of the patterned low-reflection layer is between between. 22. The low-reflection metal structure according to claim 19, wherein the patterned metal layer has a stacked structure comprising a bottom metal layer and a top metal layer on the bottom metal layer. 23. The low-reflection metal structure according to claim 22, wherein the bottom metal layer has a thickness between between, and the thickness of the top metal layer is between between. 24. The low-reflection metal structure according to claim 19, wherein the reflectance of the patterned low-reflection layer is between 2% and 20%. 25. The low-reflection metal structure according to claim 19, wherein the patterned low-reflection layer comprises a metal oxide layer or a metal oxynitride layer. 26. The low-reflection metal structure according to claim 25, wherein the content of oxygen in the metal oxide layer is between 5% and 50 atomic percent. 27. The low reflection metal structure according to claim 25, wherein the metal oxide layer comprises a molybdenum oxide layer or a molybdenum tantalum oxide layer. 28. The method for manufacturing a low-reflection metal structure according to claim 25, wherein the content of oxygen in the metal oxynitride layer is between 5% and 50 atomic percent, and the metal oxynitride layer The content of nitrogen in the medium is between 1% and 10%. 29. The low reflection metal structure according to claim 25, wherein the metal oxynitride layer comprises a molybdenum oxynitride layer or a molybdenum tantalum oxynitride layer. 30 . The low-reflection metal structure according to claim 19 , wherein there is an included angle between the side surface and the bottom surface of the patterned metal layer, and the included angle is between 10 degrees and 80 degrees. 31 . 31. The low-reflection metal structure according to claim 19, further comprising an interface layer disposed between the first substrate and the patterned low-reflection layer, or between the patterned metal layer and the patterned between low reflective layers. 32. The method for manufacturing a low-reflection metal structure according to claim 31, wherein the material of the interface layer comprises metal oxide or metal oxynitride. 33. The low-reflection metal structure according to claim 19, wherein the patterned low-reflection layer is an amorphous phase. 34. A display panel, comprising: The low reflection metal structure according to claim 19; a plurality of pixel structures arranged on the first substrate; a second substrate disposed on the first substrate; and A display medium layer is arranged between the first substrate and the second substrate. 35. The display panel according to claim 34, comprising a color filter disposed on the first substrate or the second substrate. 36. The display panel according to claim 34, wherein the patterned metal layer comprises at least one of a gate line, a gate, a common line, a data line, a source or a drain By.