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CN105845655B - Superposition carries out the method and microbonding disk superposition bonding structure of ball-shaped welded on microbonding disk - Google Patents

Superposition carries out the method and microbonding disk superposition bonding structure of ball-shaped welded on microbonding disk Download PDF

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CN105845655B
CN105845655B CN201610172241.3A CN201610172241A CN105845655B CN 105845655 B CN105845655 B CN 105845655B CN 201610172241 A CN201610172241 A CN 201610172241A CN 105845655 B CN105845655 B CN 105845655B
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bonding
lead
ball
micro
superposition
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CN105845655A (en
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罗建强
潘玉华
王辉
文泽海
伍艺龙
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CETC 2 Research Institute
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
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    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/4814—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate the wire connector connecting to a bonding area protruding from the surface
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
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    • H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
    • H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
    • H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
    • H01L2224/48484—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) being a plurality of pre-balls disposed side-to-side
    • H01L2224/48488—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) being a plurality of pre-balls disposed side-to-side the connecting portion being a ball bond, i.e. ball on pre-ball
    • H01L2224/48489—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) being a plurality of pre-balls disposed side-to-side the connecting portion being a ball bond, i.e. ball on pre-ball on the semiconductor or solid-state body
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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  • Engineering & Computer Science (AREA)
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  • Wire Bonding (AREA)

Abstract

本发明公开了一种微焊盘上叠加进行球形焊接的方法及微焊盘叠加键合结构，所述方法包括以下步骤：在第二基材的微焊盘上单独植球，获得包括焊球的微焊盘；用普通键合模式键合第一引线，将微焊盘上的焊球作为第一引线的第二键合点并将第一引线的一端键合在第一引线的第二键合点上；用普通键合模式键合第二引线，将第一引线的第二键合点作为第二引线的第二键合点并将第二引线的一端叠加键合在焊球上方第一引线的第二键合点上；重复操作直至完成最后一根引线的叠加键合；各引线的第一键合点位于第一基材的微焊盘上并且第一键合点为独立键合，引线的数量为至少两根且不超过十根。微焊盘叠加键合结构采用上述微焊盘上叠加进行球形焊接的方法制备得到。

The invention discloses a method for superimposing ball welding on micro-pads and a micro-pad superimposed bonding structure. The method includes the following steps: separately planting balls on the micro-pads of the second base material to obtain solder balls The micro-pad; use the normal bonding mode to bond the first wire, use the solder ball on the micro-pad as the second bonding point of the first wire and bond one end of the first wire to the second bond of the first wire On the joint point; use the normal bonding mode to bond the second wire, use the second bonding point of the first wire as the second bonding point of the second wire and overlap and bond one end of the second wire on the first wire above the solder ball On the second bonding point; repeat the operation until the superposition bonding of the last lead is completed; the first bonding point of each lead is located on the micro-pad of the first substrate and the first bonding point is an independent bonding, and the number of leads is At least two and no more than ten. The superimposed bonding structure of the micro-pads is prepared by the above-mentioned method of superimposing the micro-pads and performing ball welding.

Description

微焊盘上叠加进行球形焊接的方法及微焊盘叠加键合结构Method for superimposing ball welding on micro-pads and superposition bonding structure of micro-pads

技术领域technical field

本发明涉及微电子技术领域，更具体地讲，涉及一种使用球焊机在微焊盘上叠加键合至少2根引线的方法和键合结构。The present invention relates to the technical field of microelectronics, and more specifically, relates to a method and a bonding structure for superimposing and bonding at least two leads on a micro pad by using a ball bonding machine.

背景技术Background technique

半导体器件芯片的焊盘越来越小，焊盘单边尺寸已经由100微米减小至30微米以下，也称作为微焊盘。此外，在毫米波、微波等高频组件的半导体器件互连领域中，因多根引线较单一引线互连键合有降低寄生电感等优势，在半导体器件互连必须至少键合2根引线。目前，普遍使用手动楔焊机实现单一焊盘同时并列键合/或叠加键合2根引线结构来实现以上功能。The pads of semiconductor device chips are getting smaller and smaller, and the size of one side of the pads has been reduced from 100 microns to less than 30 microns, also known as micro pads. In addition, in the field of semiconductor device interconnection of high-frequency components such as millimeter waves and microwaves, because multiple leads have the advantages of reducing parasitic inductance compared with single-lead interconnection bonding, at least 2 leads must be bonded in the interconnection of semiconductor devices. At present, a manual wedge bonder is commonly used to simultaneously bond a single pad side by side and/or superimpose two lead wire structures to achieve the above functions.

普通的引线球焊键合工艺较楔形焊键合工艺键合效率、可靠性高，在键合单根引线方面广范围使用。其普通键合模式是第一焊点为球键合、焊球的直径为线径的2到5倍，第二焊点为鱼尾状。The common wire ball bonding process has higher bonding efficiency and reliability than the wedge bonding process, and is widely used in bonding a single lead. Its common bonding mode is that the first solder joint is ball bonding, the diameter of the solder ball is 2 to 5 times the wire diameter, and the second solder joint is fishtail-shaped.

因此，焊盘尺寸的不断减小使得使用球形焊键和工艺实现单焊盘上同时键合至少两根引线的键合结构是一项难题和巨大的挑战。Therefore, the continuous reduction of pad size makes it difficult and a great challenge to realize the bonding structure of simultaneously bonding at least two wires on a single pad by using ball bond and process.

发明内容Contents of the invention

为了解决现有技术中存在的问题，本发明的目的是提供一种使用球焊机实现在微焊盘上叠加键合至少2根引线的方法和叠加键合结构。In order to solve the problems existing in the prior art, the object of the present invention is to provide a method and a superimposed bonding structure for superimposed bonding of at least two wires on a micro pad using a ball bonder.

本发明提供了一种微焊盘上叠加进行球形焊接的方法，所述方法包括以下步骤：The invention provides a method for superimposing spherical welding on a micro pad, the method comprising the following steps:

A、在第二基材的微焊盘上单独植球，获得包括焊球的微焊盘；A, separately planting balls on the micro-pads of the second base material to obtain micro-pads including solder balls;

B、用普通键合模式键合第一引线，其中，将所述微焊盘上的焊球作为第一引线的第二键合点并将第一引线的一端键合在所述第一引线的第二键合点上；B. Bonding the first lead with common bonding mode, wherein, the solder ball on the micro pad is used as the second bonding point of the first lead and one end of the first lead is bonded to the first lead on the second bonding point;

C、用普通键合模式键合第二引线，其中，将所述第一引线的第二键合点作为第二引线的第二键合点并将第二引线的一端叠加键合在所述焊球上方第一引线的第二键合点上；C. Bonding the second wire in the normal bonding mode, wherein the second bonding point of the first wire is used as the second bonding point of the second wire and one end of the second wire is superimposed and bonded to the solder ball on the second bonding point of the first lead above;

D、重复操作直至完成最后一根引线的叠加键合；D. Repeat the operation until the superposition bonding of the last lead is completed;

其中，各引线的第一键合点位于第一基材的微焊盘上并且所述第一键合点为独立键合，引线的数量为至少两根且不超过十根。Wherein, the first bonding point of each lead is located on the micro-pad of the first substrate and the first bonding point is an independent bonding, and the number of the leads is at least two and not more than ten.

根据本发明的微焊盘上叠加进行球形焊接的方法的一个实施例，所述方法还包括在最后一根引线的第一键合点上进行保护植球的步骤。According to an embodiment of the method for superimposing ball soldering on micro pads of the present invention, the method further includes the step of performing protective ball planting on the first bonding point of the last wire.

根据本发明的微焊盘上叠加进行球形焊接的方法的一个实施例，采用手动球焊机或全自动球焊机进行植球和引线键合。According to an embodiment of the method for superimposing ball bonding on micro pads of the present invention, a manual ball bonding machine or an automatic ball bonding machine is used for ball planting and wire bonding.

根据本发明的微焊盘上叠加进行球形焊接的方法的一个实施例，所述独立键合通过在单一微焊盘上焊接单根引线或组合焊接多根引线实现。According to an embodiment of the method for superimposing ball bonding on micro-pads of the present invention, the independent bonding is realized by welding a single wire or combining multiple wires on a single micro-pad.

根据本发明的微焊盘上叠加进行球形焊接的方法的一个实施例，所述普通键合模式为通过超声的方法将引线的一端烧成球状，通过劈刀将所述引线的一端压合在加热的第一基材的微焊盘上的第一键合点处并形成第一焊点，所述第一焊点为球状键合；之后移动劈刀至第二基材的微焊盘上方，通过超声热压的方法将引线的另一端键合在第二基材的微焊盘上的第二键合点处并折断形成第二焊点，所述第二焊点为鱼尾状键合。According to an embodiment of the method for superimposing ball welding on the micro-pad of the present invention, the common bonding mode is to burn one end of the lead wire into a ball shape by ultrasonic method, and press one end of the lead wire to the The first bonding point on the micro-pad of the heated first base material and form the first soldering point, the first soldering point is a ball bond; then move the chopper to above the micro-pad of the second base material, The other end of the wire is bonded to the second bonding point on the micro-pad of the second base material by means of ultrasonic hot pressing and broken to form a second soldering point, and the second soldering point is a fishtail bond.

根据本发明的微焊盘上叠加进行球形焊接的方法的一个实施例，所述第一基材或第二基材为半导体器件、陶瓷电路基板或有机基板。According to an embodiment of the method for superimposing ball soldering on micro pads of the present invention, the first substrate or the second substrate is a semiconductor device, a ceramic circuit substrate or an organic substrate.

根据本发明的微焊盘上叠加进行球形焊接的方法的一个实施例，所述微焊盘的单边尺寸在200微米以下。According to an embodiment of the method for superimposing ball soldering on the micro-pads of the present invention, the size of one side of the micro-pads is below 200 microns.

根据本发明的微焊盘上叠加进行球形焊接的方法的一个实施例，所述引线为直径在80微米以下的铜引线、金引线、铝引线或银引线。According to an embodiment of the method for superimposing ball soldering on micro pads of the present invention, the wires are copper wires, gold wires, aluminum wires or silver wires with a diameter of less than 80 microns.

根据本发明的微焊盘上叠加进行球形焊接的方法的一个实施例，所述焊球或保护焊球的直径为引线的直径的2～5倍。According to an embodiment of the method for superimposing ball soldering on micro pads of the present invention, the diameter of the solder ball or the protective solder ball is 2 to 5 times the diameter of the wire.

本发明的另一方面提供了一种微焊盘叠加键合结构，所述微焊盘叠加键合结构采用上述微焊盘上叠加进行球形焊接的方法制备得到。Another aspect of the present invention provides a superimposed bonding structure of micro-pads, which is prepared by the above-mentioned method of superimposing micro-pads for spherical bonding.

与现有技术相比，本发明的微焊盘上叠加进行球形焊接的方法及微焊盘叠加键合结构利用球焊机实现在微焊盘上叠加键合至少2根引线，并通过保护植球保护多根引线依次叠加的键合点，提高了单一焊盘叠焊的可靠性；此外，通过该键合结构，可以合并相同功能的微焊盘，减少输入输出的微焊盘数量，可进一步缩小半导体芯片尺寸；本发明制备得到的叠加键合结构的破坏性测试满足GJB 548B-2005《微电子器件试验方法和程序》方法2011.1键合强度标准。Compared with the prior art, the method for superimposing ball welding on the micro-pad and the micro-pad superimposed bonding structure of the present invention use a ball bonder to realize superposition and bonding of at least 2 leads on the micro-pad, and through the protective implant The ball protects the bonding points where multiple leads are stacked in sequence, which improves the reliability of a single pad bonding; in addition, through this bonding structure, micro pads with the same function can be combined to reduce the number of input and output micro pads, which can further Reduce the size of the semiconductor chip; the destructive test of the superimposed bonding structure prepared by the present invention meets the bonding strength standard of method 2011.1 of GJB 548B-2005 "Test Methods and Procedures for Microelectronic Devices".

附图说明Description of drawings

图1示出了根据本发明示例1中在半导体芯片微焊盘上叠加进行球形焊接得到的叠加两根引线的微焊盘叠加键合结构的俯视图。FIG. 1 shows a top view of a superimposed bonding structure of micropads with two leads superimposed on the micropads of a semiconductor chip obtained by superimposing ball bonding in Example 1 of the present invention.

图2示出了根据本发明示例1中在半导体芯片微焊盘上叠加进行球形焊接得到的叠加两根引线的微焊盘叠加键合结构的侧视图。FIG. 2 shows a side view of a superimposed bonding structure of micropads with two leads superimposed on the micropads of the semiconductor chip obtained by superimposing ball bonding in Example 1 of the present invention.

附图标记说明：Explanation of reference signs:

1-半导体芯片、2-基板电路片、3-包括焊球的微焊盘、4-第一引线、5-第二引线、6-保护植球。1-semiconductor chip, 2-substrate circuit chip, 3-micro pad including solder balls, 4-first lead, 5-second lead, 6-protection ball planting.

具体实施方式Detailed ways

本说明书中公开的所有特征，或公开的所有方法或过程中的步骤，除了互相排斥的特征和/或步骤以外，均可以以任何方式组合。All features disclosed in this specification, or steps in all methods or processes disclosed, may be combined in any manner, except for mutually exclusive features and/or steps.

本说明书(包括任何附加权利要求、摘要和附图)中公开的任一特征，除非特别叙述，均可被其他等效或具有类似目的的替代特征加以替换。即，除非特别叙述，每个特征只是一系列等效或类似特征中的一个例子而已。Any feature disclosed in this specification (including any appended claims, abstract and drawings), unless expressly stated otherwise, may be replaced by alternative features which are equivalent or serve a similar purpose. That is, unless expressly stated otherwise, each feature is one example only of a series of equivalent or similar features.

下面将对本发明的微焊盘上叠加进行球形焊接的方法及微焊盘叠加键合结构进行详细的说明。The method for superimposing ball bonding on the micro-pads and the superimposed bonding structure of the micro-pads of the present invention will be described in detail below.

根据本发明的示例性实施例，所述微焊盘上叠加进行球形焊接的方法包括以下多个步骤。According to an exemplary embodiment of the present invention, the method for superimposing ball bonding on micro pads includes the following steps.

步骤A：Step A:

在第二基材的微焊盘上单独植球，获得包括焊球的微焊盘。Balls are individually planted on the micro-pads of the second base material to obtain micro-pads including solder balls.

其中，可以采用手动球焊机或全自动球焊机进行植球。Among them, a manual ball bonding machine or an automatic ball bonding machine can be used for ball planting.

第二基材可以是半导体器件(如Si基、GaAs基、GaN基等)、陶瓷电路基板(如薄膜陶瓷电路、厚膜陶瓷电路、LTCC等)或有机基板(如PCB、印制电路、塑料基材等)等任何基材，而其上的微焊盘可以基于上述任何基材制备得到。The second substrate can be a semiconductor device (such as Si-based, GaAs-based, GaN-based, etc.), ceramic circuit substrate (such as thin-film ceramic circuit, thick-film ceramic circuit, LTCC, etc.) or an organic substrate (such as PCB, printed circuit, plastic base material, etc.) and the like, and the micro-pads thereon can be prepared based on any of the above-mentioned base materials.

预先在微焊盘上进行植球的目的是为了保护第二基材(如半导体管芯)不被损坏并增大焊盘面积。而采用自动球焊机可以使本步骤自动化进行，具有很强的推广适用性。The purpose of performing ball planting on the micro-pad in advance is to protect the second substrate (such as a semiconductor die) from being damaged and to increase the area of the pad. The use of an automatic ball welding machine can automate this step, which has strong applicability for promotion.

步骤B：Step B:

用普通键合模式键合第一引线，其中，将所述微焊盘上的焊球作为第一引线的第二键合点并将第一引线的一端键合在所述第一引线的第二键合点上。Bonding the first wire in a common bonding mode, wherein the solder ball on the micro-pad is used as the second bonding point of the first wire and one end of the first wire is bonded to the second bonding point of the first wire. on the bonding point.

其中，第二键合点是相对于第一键合点而言的概念，第二键合点是指引线与第二基材焊接键合的位置，第一键合点是指引线与第一基材焊接键合的位置。具体地，可以直接将第一引线的一端键合至微焊盘上的焊球上。Wherein, the second bonding point is a concept relative to the first bonding point, the second bonding point is the position where the guide line is welded and bonded to the second base material, and the first bonding point is the welding bond between the guide line and the first base material suitable location. Specifically, one end of the first lead may be directly bonded to a solder ball on the micro-pad.

在进行引线键合时，同样地可以采用手动球焊机或全自动球焊机进行。When wire bonding is performed, a manual ball bonder or a fully automatic ball bonder can also be used.

步骤C：Step C:

用普通键合模式键合第二引线，其中，将所述第一引线的第二键合点作为第二引线的第二键合点并将第二引线的一端叠加键合在所述焊球上方第一引线的第二键合点上。Bonding the second wire in a common bonding mode, wherein the second bonding point of the first wire is used as the second bonding point of the second wire and one end of the second wire is superimposed and bonded on the solder ball above the solder ball on the second bond point of a lead.

由于本发明需要在微焊盘上叠加键合多根引线，因此需要选择叠加的最优方式并保证键合的强度。根据本发明，优选地直接将第一引线的第二键合点作为第二引线的第二键合点，从而可以直接将第二引线的一端叠加键合至第一引线的第二键合点上，由此实现两根引线在微焊盘上的有效叠加键合。Since the present invention needs to superimpose and bond multiple wires on the micro-pad, it is necessary to select the optimal method of superposition and ensure the bonding strength. According to the present invention, it is preferable to directly use the second bonding point of the first lead as the second bonding point of the second lead, so that one end of the second lead can be directly superimposedly bonded to the second bonding point of the first lead, by This enables efficient superimposed bonding of the two wires on the micropad.

步骤D：Step D:

重复操作直至完成最后一根引线的叠加键合。其中，引线的数量为至少两根且不超过十根。Repeat until the stack bonding of the last wire is complete. Wherein, the number of lead wires is at least two and not more than ten.

根据本发明，上述第一引线、第二引线等各引线的第一键合点位于第一基材的微焊盘上并且所述第一键合点为独立键合。如上所述，第一键合点是指引线与第一基材焊接键合的位置，通过引线两端分别与第一基材和第二基材的焊接键合，从而实现诸如芯片与基板之间的电气互连或芯片之间的信息互通。具体地，上述独立键合可以通过在单一微焊盘上焊接单根引线或组合焊接多根引线来实现。第二基材也可以为半导体器件(如Si基、GaAs基、GaN基等)、陶瓷电路基板(如薄膜陶瓷电路、厚膜陶瓷电路、LTCC等)或有机基板(如PCB、印制电路、塑料基材等)等任何基材，而其上的微焊盘可以基于上述任何基材制备得到。According to the present invention, the first bonding point of each lead such as the first lead and the second lead is located on the micro-pad of the first substrate, and the first bonding point is an independent bonding. As mentioned above, the first bonding point is the position where the lead wire is welded and bonded to the first base material. Through the soldering and bonding of the two ends of the lead wire to the first base material and the second base material respectively, such as between the chip and the substrate is realized. The electrical interconnection or information exchange between chips. Specifically, the above-mentioned independent bonding can be realized by welding a single wire or welding multiple wires in combination on a single micro-pad. The second substrate can also be a semiconductor device (such as Si base, GaAs base, GaN base, etc.), a ceramic circuit substrate (such as thin film ceramic circuit, thick film ceramic circuit, LTCC, etc.) or an organic substrate (such as PCB, printed circuit, plastic substrate, etc.), and the micro-pads thereon can be prepared based on any of the above-mentioned substrates.

根据本发明，上述的普通键合模式具体为：通过超声的方法将引线的一端烧成球状，通过劈刀将引线的一端压合在加热的第一基材的微焊盘上的第一键合点处并形成第一焊点，该第一焊点为球状键合；之后移动劈刀至第二基材的微焊盘上方，通过超声热压的方法将引线的另一端键合在第二基材的微焊盘上的第二键合点处并折断形成第二焊点，该第二焊点为鱼尾状键合。也即，在本发明中，通过超声的方法将第一引线的一端烧成球状，通过劈刀将第一引线的一端压合在加热的第一基材的一个微焊盘上并形成第一焊点，该第一焊点为球状键合，其中，第一焊点是将第一引线焊接到第一基材中的第一键合点之后形成的；之后，移动劈刀至第二基材的微焊盘上方，通过超声热压的方法将第一引线的另一端键合在第二基材的包括焊球的微焊盘上并折断形成第二焊点，该第二焊点为鱼尾状键合，其中，第二焊点是将第一引线焊接到第二基材中的包括焊球的微焊盘上的第二键合点之后形成的。对于第二引线也是如此操作，只是将第一引线的第二键合点作为第二引线的第二键合点并将第二引线的一端叠加键合在焊球上方第一引线的第二键合点上即可实现叠加焊接，以此类推，实现多根引线的叠加键合并获得微焊盘叠加键合结构。According to the present invention, the above-mentioned common bonding mode is specifically: burn one end of the lead wire into a ball shape by an ultrasonic method, press one end of the lead wire to the first bond on the micro-pad of the heated first substrate by a chopper and form the first solder joint, which is a ball bond; then move the chopper above the micro-pad of the second substrate, and bond the other end of the wire to the second substrate by ultrasonic thermocompression. The second bonding point on the micro-pad of the base material is broken to form a second soldering point, and the second soldering point is a fishtail bond. That is to say, in the present invention, one end of the first lead wire is fired into a ball shape by an ultrasonic method, and one end of the first lead wire is pressed onto a micro-pad of the heated first base material by a chopper to form a first a solder joint, the first solder joint being a ball bond, wherein the first solder joint is formed after bonding the first lead to the first bond in the first substrate; thereafter, moving the capillary to the second substrate The other end of the first lead is bonded on the micro-pad of the second substrate including solder balls by means of ultrasonic thermocompression and broken off to form a second solder joint. The second solder joint is fish Tail bonding, wherein the second bond is formed after the first lead is bonded to the second bond on a micro-pad comprising a solder ball in the second substrate. The same is done for the second lead, but the second bonding point of the first lead is used as the second bonding point of the second lead and one end of the second lead is superimposed on the second bonding point of the first lead above the solder ball Overlay welding can be realized, and by analogy, the overlay bonding of multiple leads can be realized and the superposition bonding structure of micro pads can be obtained.

更优选地，本方法还包括在最后一根引线的第一键合点上进行保护植球的步骤，从而获得包括保护焊球的微焊盘叠加键合结构。事实上，保护植球可以起到增加叠加键合结构的可靠性的作用并保护多根叠焊引线焊点，进而实现在微焊盘上叠焊多根引线的结构，事实上，即使无保护植球也能够实现本发明的基本叠加键合结构。More preferably, the method further includes the step of performing protective ball planting on the first bonding point of the last wire, so as to obtain a superimposed bonding structure of micro pads including protective solder balls. In fact, protecting the ball planting can play a role in increasing the reliability of the superimposed bonding structure and protect the solder joints of multiple bonding wires, thereby realizing the structure of bonding multiple wires on the micro pad. In fact, even without protection Bumping can also achieve the basic stacking bonding structure of the present invention.

根据本发明的示例性实施例，第一基材或第二基材上的微焊盘的单边尺寸在200微米以下，例如可以为30、50、80、120、200微米等尺寸。并且，引线可以为铜引线、金引线、铝引线或银引线等任何金属引线，并且引线的直径在80微米以下，例如可以为12、18、25、40、80微米等尺寸。此外，焊球或保护焊球的直径为引线的直径的2～5倍，例如，对于常用直径为25微米的引线，其焊球或保护焊球的直径可以为60微米。According to an exemplary embodiment of the present invention, the size of one side of the micro-pads on the first substrate or the second substrate is less than 200 microns, such as 30, 50, 80, 120, 200 microns, etc. Moreover, the wires can be any metal wires such as copper wires, gold wires, aluminum wires or silver wires, and the diameter of the wires is less than 80 microns, such as 12, 18, 25, 40, 80 microns, etc. In addition, the diameter of the solder ball or the protective solder ball is 2 to 5 times the diameter of the lead wire. For example, for a lead wire with a common diameter of 25 microns, the diameter of the solder ball or the protective solder ball can be 60 microns.

也即，采用上述方法即可在半导体器件的微焊盘上叠加键合至少两根引线并获得微焊盘叠加键合结构，而本发明的微焊盘叠加键合结构则是采用上述微焊盘上叠加进行球形焊接的方法制备得到。该叠加键合结构的破坏性测试满足GJB 548B-2005《微电子器件试验方法和程序》方法2011.1键合强度标准。That is to say, using the above method, at least two leads can be superimposed and bonded on the micro-pad of the semiconductor device to obtain a micro-pad superimposed bonding structure, while the micro-pad superimposed bonding structure of the present invention uses the above-mentioned micro-pad It is prepared by superimposing and performing spherical welding on the disk. The destructive test of the superimposed bonding structure meets the bonding strength standard of GJB 548B-2005 "Test Methods and Procedures for Microelectronic Devices" method 2011.1.

下面结合具体示例对本发明作进一步说明。The present invention will be further described below in combination with specific examples.

示例1：Example 1:

图1示出了根据本发明示例1中在半导体芯片微焊盘上叠加进行球形焊接得到的叠加两根引线的微焊盘叠加键合结构的俯视图，图2示出了根据本发明示例1中在半导体芯片微焊盘上叠加进行球形焊接得到的叠加两根引线的微焊盘叠加键合结构的侧视图。Fig. 1 shows the top view of the superimposed bonding structure of the superimposed micro-pads of two leads obtained by superimposing ball bonding on the micro-pads of the semiconductor chip according to Example 1 of the present invention, and Fig. 2 shows that according to Example 1 of the present invention A side view of a superimposed micropad bonding structure with two leads superimposed on the micropad of a semiconductor chip obtained by ball bonding.

如图1和图2所示，首先在半导体芯片1上的微焊盘上单独植球，获得包括焊球的微焊盘3；采用普通键合模式键合第一引线4，其中，将第一引线4的一端键合至作为第一引线4的第二键合点的焊球上，其中，微焊盘植球和键合第一引线的两个步骤可以在自动球焊机中直接采用Pre-Wire模式实现；然后同样采用普通键合模式键合第二引线，其中，将第二引线5的一端叠加键合至作为第二引线5的第二键合点的第一引线4的第二键合点上；由于只有两根引线，所以直接在第二引线5的第二键合点上方进行保护植球，获得保护植球6，进而获得微焊盘叠加键合结构。其中，键合第二引线和进行保护植球的两个步骤可以在自动球焊机中直接采用Post-Wire模式实现。并且，第一引线4和第二引线5的第一键合点均设置在基板电路片2上，并且通过分别在基板电路片2上的单一微焊盘上焊接单根引线实现独立球状键合。As shown in Fig. 1 and Fig. 2, at first on the micro-pad on the semiconductor chip 1, separately plant balls, obtain the micro-pad 3 that comprises solder ball; Adopt common bonding mode to bond the first lead 4, wherein, the One end of a lead 4 is bonded to a solder ball as the second bonding point of the first lead 4, wherein the two steps of micro-pad ball planting and bonding the first lead can be directly adopted in an automatic ball bonder. -Wire mode realization; then also adopt common bonding mode to bond the second wire, wherein, one end of the second wire 5 is superimposedly bonded to the second bond of the first wire 4 as the second bonding point of the second wire 5 on the bonding point; since there are only two leads, the protective ball planting is performed directly above the second bonding point of the second lead wire 5 to obtain the protective ball planting 6, and then obtain the micro-pad stacked bonding structure. Among them, the two steps of bonding the second wire and performing protective ball planting can be directly implemented in the automatic ball bonding machine using Post-Wire mode. Moreover, the first bonding points of the first lead 4 and the second lead 5 are both arranged on the substrate circuit sheet 2, and independent ball bonding is realized by welding a single lead on a single micro pad on the substrate circuit sheet 2 respectively.

综上所述，本发明的微焊盘上叠加进行球形焊接的方法及微焊盘叠加键合结构利用球焊机实现在半导体器件焊盘上叠加键合至少2根引线，并通过保护植球保护多根引线依次叠加的键合点，提高了单一焊盘叠焊的可靠性；此外，通过该键合结构，可以合并相同功能的微焊盘，减少输入输出的微焊盘数量，可进一步缩小半导体芯片尺寸；本发明制备得到的叠加键合结构的破坏性测试满足GJB 548B-2005《微电子器件试验方法和程序》方法2011.1键合强度标准。In summary, the method for superimposing ball bonding on the micro-pads of the present invention and the micro-pad superimposed bonding structure use a ball bonder to realize superposition and bonding of at least two leads on the semiconductor device pads, and through the protection of the ball planting It protects the bonding points where multiple wires are stacked in sequence, which improves the reliability of single pad bonding; in addition, through this bonding structure, micro pads with the same function can be combined to reduce the number of input and output micro pads, which can further shrink Semiconductor chip size; the destructive test of the superimposed bonding structure prepared by the present invention meets the bonding strength standard of method 2011.1 of GJB 548B-2005 "Test Methods and Procedures for Microelectronic Devices".

本发明并不局限于前述的具体实施方式。本发明扩展到任何在本说明书中披露的新特征或任何新的组合，以及披露的任一新的方法或过程的步骤或任何新的组合。The present invention is not limited to the foregoing specific embodiments. The present invention extends to any new feature or any new combination disclosed in this specification, and any new method or process step or any new combination disclosed.

Claims (9)

1. a kind of method that superposition carries out ball-shaped welded on microbonding disk, it is characterised in that the described method comprises the following steps：
A, ball is individually planted on the microbonding disk of the second base material, obtains the microbonding disk for including soldered ball；
B, the first lead is bonded with common bonding pattern, wherein, using the soldered ball on the microbonding disk as the second of the first lead One end of first lead is simultaneously bonded on the second bonding point of first lead by bonding point；
C, the second lead is bonded with common bonding pattern, wherein, using the second bonding point of first lead as the second lead The second bonding point and the superposition of one end of the second lead is bonded in above the soldered ball on the second bonding point of the first lead；
D, repetitive operation until complete last root lead superposition bonding and it is enterprising in the second bonding point of last root lead Row protection plants ball and forms protection soldered ball；
Wherein, the first bonding point of each lead is located on the microbonding disk of the first base material and first bonding point is independent keys Close, the quantity of lead is at least two and no more than ten.
2. the method that superposition carries out ball-shaped welded on microbonding disk according to claim 1, it is characterised in that use manual ball Welding machine or full-automatic pellet bonding machine carry out planting ball and wire bonding.
3. the method that superposition carries out ball-shaped welded on microbonding disk according to claim 1, it is characterised in that the independent keys Close and realized by welding more leads of single wire or Combination Welding on single microbonding disk.
4. the method that superposition carries out ball-shaped welded on microbonding disk according to claim 1, it is characterised in that the common key Syntype is spherical to be burnt till one end of lead by the method for ultrasound, and one end of the lead is pressed together on heating by chopper The first base material microbonding disk on the first bonding point at and formed the first solder joint, first solder joint is spherical bonding；Afterwards Above mobile chopper to the microbonding disk of the second base material, the other end of lead is bonded in by the second base material by the method for ultrasonic thermocompression Microbonding disk on the second bonding point at and fracture to form the second solder joint, second solder joint be fish tail shape bonding.
5. the method that superposition carries out ball-shaped welded on the microbonding disk according to claim 1,3 or 4, it is characterised in that described The first base material or the second base material are semiconductor devices, ceramic circuit board or organic substrate.
6. the method that superposition carries out ball-shaped welded on microbonding disk according to claim 1, it is characterised in that the microbonding disk Single side size below 200 microns.
7. the method that superposition carries out ball-shaped welded on microbonding disk according to claim 1, it is characterised in that the lead is Copper lead, gold wire, aluminum lead or silver wire of the diameter below 80 microns.
8. on microbonding disk according to claim 1 superposition carry out ball-shaped welded method, it is characterised in that the soldered ball or Protect the diameter of a diameter of lead of soldered ball 2~5 times.
9. a kind of microbonding disk is superimposed bonding structure, it is characterised in that the microbonding disk superposition bonding structure using claim 1 to The method of superposition progress ball-shaped welded is prepared on microbonding disk any one of 8.
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CN107170691B (en) * 2017-05-27 2019-07-16 中国电子科技集团公司第二十九研究所 A method for automatic wedge bonding on micro-pads stacked or side-by-side
CN109192848B (en) * 2018-10-10 2024-02-20 广东晶科电子股份有限公司 LED device and wire bonding method thereof
CN112670257B (en) * 2020-12-28 2025-01-17 颀中科技（苏州）有限公司 Chip packaging structure and chip packaging method
CN113830727B (en) * 2021-09-09 2024-05-24 中国人民解放军军事科学院国防科技创新研究院 Transfer method of micro-nano piece

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CN103035546A (en) * 2012-12-18 2013-04-10 可天士半导体（沈阳）有限公司 Small-size bonding point double-line bonding method

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CN1670935A (en) * 2004-03-18 2005-09-21 株式会社电装 Wire bonding method and semiconductor device
CN101114628A (en) * 2006-07-27 2008-01-30 富士通株式会社 Semiconductor device and manufacturing method thereof
CN103035546A (en) * 2012-12-18 2013-04-10 可天士半导体（沈阳）有限公司 Small-size bonding point double-line bonding method

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