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CN106025797B - The wide area's semiconductor laser structure of two-dimensional photon quasi-crystalline substance - Google Patents

The wide area's semiconductor laser structure of two-dimensional photon quasi-crystalline substance Download PDF

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Publication number
CN106025797B
CN106025797B CN201610563190.7A CN201610563190A CN106025797B CN 106025797 B CN106025797 B CN 106025797B CN 201610563190 A CN201610563190 A CN 201610563190A CN 106025797 B CN106025797 B CN 106025797B
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quasi
dimensional photonic
layer
semiconductor laser
waveguide
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CN106025797A (en
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贾志伟
王利军
张锦川
刘峰奇
刘俊岐
王占国
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Institute of Semiconductors of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface

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  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention discloses a kind of wide area's semiconductor laser structures of two-dimensional photon quasi-crystalline substance, comprising: a substrate；Waveguide once；One lower limit layer；One active area；One upper limiting layer；Waveguide on one；One contact layer；One passivation layer；One front electrode；One rear electrode；One is made in the two-dimensional photon quasi-crystalline substance array of upper limiting layer, the wide area's table top of bar shaped is etched from contact layer to lower waveguide, passivation layer coats entire table top and outputs electrical pumping window on table top top, top electrode is on passivation layer, Ohmic contact is formed in electrical pumping window area and contact layer and is used for electrical pumping, while providing heat dissipation channel for active area；Rear electrode and substrate form Ohmic contact, are used for another pole electrical pumping.

Description

The wide area's semiconductor laser structure of two-dimensional photon quasi-crystalline substance
Technical field
The present invention relates to semiconductor photoelectric device technical fields, more particularly to one kind can export the high-power of single-lobe laser Wide area's semiconductor laser structure.
Background technique
Semiconductor laser has many advantages, such as that small in size, power is big, tunable wave length, direct electric pump, is to apply at present Most commonly used laser light source.Various types of semiconductor lasers can be realized from ultraviolet (UV) to Terahertz (THz) wave band Wavelength covering, be of great significance for optic communication, laser remote sensing, accurate sensing etc., be all very on civilian and military Important national strategy resource.However, there is semiconductor laser light output the biggish angle of divergence even high-order transverse mode to export More valve far fields.For the laser of single-lobe diverging, optical fiber can be collimated or is coupled by additional lens, but for More valve far fields, can coupling it is very poor, then need to carry out increasingly complex optical manipulation, or even can not collimate.
High power semiconductor lasers often increase laser output power, but wide area laser utensil using wide plot structure There is the high-order transverse mode output in principle, increases the use difficulty and cost of high power semiconductor lasers in practical applications. By the equally distributed 2 D photon crystal of introducing, or the oblique chamber of production, it can realize that fundamental transverse mode works to a certain extent, But laser output power will substantially reduce.In addition, coupling ridge waveguide laser can be super horizontal in the base for realizing higher-wattage Mould output, but the gain of ridge exterior domain missing and biggish surface plasma absorption loss also reduce base to a certain extent Mould yield rate and output power.
The present invention, to the strong restriction effect of light field, optical mode in wide area's laser chamber is modulated into using two-dimensional photon quasi-crystalline substance For the mode of similar coherent array, simultaneously because the gain in photon quasi-crystalline substance region exists, device is than coherent array and coupling ridge device Part is easier to obtain lowest order super-mode work.In addition, the structure has weight almost without excess loss is increased, for powerful realize Want meaning.
Summary of the invention
Aiming at the problem that high-power wide area semiconductor laser high-order transverse mode lasing, more valve far fields, the present invention provides one Kind introduces wide area's semiconductor laser structure of two-dimensional photon quasi-crystalline substance, can be realized single lobe far field output, and to wide area's device Output power influence very little.
The present invention provides a kind of wide area's semiconductor laser structure of two-dimensional photon quasi-crystalline substance, which includes:
One substrate, can be conductive, can be InP, GaAs, GaN, GaSb, InAs etc.；
Waveguide once；
One lower limit layer, effective refractive index are higher than active area, can enhance optical mode limitation；
One active area, device light emitting region can be the luminous active area structure of various semiconductor interbands, intersubband；
One upper limiting layer acts on same lower limit layer, while two-dimensional photon quasi-crystalline substance is made in thereon；
Waveguide on one is grown on after the production of two-dimensional photon quasi-crystalline substance；
One contact layer, high doped materials easily form Ohmic contact with top electrode；
One passivation layer coats entire table top, and electrify insulating effect, and there are electrical pumping windows；
One front electrode, uniformly on passivation layer, window area is contacted with contact layer for preparation；
One rear electrode, uniformly preparation is in substrate back；
One is made in the two-dimensional photon quasi-crystalline substance array of upper limiting layer, and photon quasi-crystalline substance parameter, is spaced and is peak width No periodically view laser wavelength and waveguiding structure and difference.
Bright spot of the present invention is to be used to modulate laser transverse mode for two-dimensional photon quasi-crystalline substance for the first time, is not changing ridge waveguide structure In the case where, laser transverse mode is modulated to the mode similar to coherent array, hardly loses the output work of wide area device Rate, and can obtain single lobe far field output, substantially increase high-power wide area's device can coupling performance.
Detailed description of the invention
Technology contents in order to further illustrate the present invention make into one the present invention below in conjunction with the drawings and specific embodiments Walk explanation, in which:
The schematic cross-section in emitting cavity face is parallel in the wide area's semiconductor laser structure of Fig. 1 two-dimensional photon quasi-crystalline substance.
Two kinds of Fig. 2 common quasi-crystal crystal point battle array structure charts and its primitive unit cell: (a) ten double stampfli type photons are quasi- It is brilliant；(b) ten heavy photon quasi-crystalline substance.
The near field (a) of the wide area's quantum cascade laser of 9 μm of two-dimensional photon quasi-crystalline substances of Fig. 3 wavelength and the simulation drawing in far field (b).
Description of symbols:
01 substrate；
02 lower waveguide；
03 lower limit layer；
04 active area；
05 upper limiting layer；
Waveguide on 06；
07 contact layer；
08 passivation layer；
09 front electrode；
10 rear electrodes；
11 two-dimensional photon quasi-crystalline substance arrays.
Specific embodiment
In order to which the purpose of the present invention, technical solution is more clearly understood, below in conjunction with specific embodiment, and referring to attached drawing Illustrate, the present invention will be further described in detail.
It is given in Fig. 1 and is parallel to cutting for emitting cavity face in the wide area's semiconductor laser structure of two-dimensional photon quasi-crystalline substance of the present invention Face schematic diagram.As shown in Figure 1, the device includes:
One substrate 01, can be conductive, can be InP, GaAs, GaN, GaSb, InAs etc.；
Waveguide 02 once；
One lower limit layer 03, effective refractive index are higher than active area, can enhance optical mode limitation；
One active area 04, device light emitting region can be the luminous active area structure of various semiconductor interbands, intersubband；
One upper limiting layer 05 acts on same lower limit layer, while two-dimensional photon quasi-crystalline substance is made in thereon；
Waveguide 06 on one is grown on after the production of two-dimensional photon quasi-crystalline substance；
One contact layer 07, high doped materials easily form Ohmic contact with top electrode；
One passivation layer 08 coats entire table top, and electrify insulating effect, and there are electrical pumping windows；
One front electrode 09, uniformly on passivation layer, window area is contacted with contact layer for preparation；
One rear electrode 10, uniformly preparation is in substrate back；
One is made in the two-dimensional photon quasi-crystalline substance array 11 of upper limiting layer, photon quasi-crystalline substance parameter, peak width, interval and Whether periodically view laser wavelength and waveguiding structure and difference.
Two kinds of common quasi-crystal crystal point battle array structure charts and its primitive unit cell are provided in Fig. 2.For different-waveband, selection is not Same primitive unit cell parameter a quasi-crystalline substance scale, can be realized the strong restriction effect to optical mode, and quasi-crystalline substance scale depends on the width in quasi-crystalline substance region Spend w, it is necessary to when w/a is greater than certain value, just be able to achieve effective mode limitation.However, may be led if w/a is excessive Cause optical mode that cannot couple relevant.In addition, the preparation of quasi-crystalline substance dot matrix depends on mask preparation technique, therefore the determination of primitive unit cell parameter a Mode limitation, Mode Coupling and technical feasibility and cost need to be comprehensively considered.
The implementation process of one simplified example is described below, makes implementation process of the invention is relatively sharp to be illustrated.In example It is one 9 μm of wavelength, the specific structure parameter and its design philosophy of the wide area's quantum cascade laser of two-dimensional photon quasi-crystalline substance.
One N-shaped InP substrate, substrate doping 2e17cm-3, 200 μm of thickness；
Waveguide under the low-doped InP of one N-shaped, Si doping, doping concentration 2e16cm-3, 3 μm of thickness；
One matching InGaAs lower limit layer, Si doping, doping concentration 3e16cm-3, thickness 300nm；
One matching InGaAs/InAlAs active area, is based on biphonon resonant design, 9 μm of centre of luminescence wavelength, overall thickness is about 1.5μm；
One matching InGaAs upper limiting layer, Si doping, doping concentration 3e16cm-3, thickness 300nm；
Waveguide on the low-doped InP of one N-shaped, Si doping, doping concentration 2e16cm-3, 3 μm of thickness；
The highly doped InP contact layer of one N-shaped, Si doping, doping concentration are greater than 3e18cm-3, thickness 500nm；
Etch wide 133 μm of stripe mesas from top to bottom, 6.5 μm of table surface height；
One SiNxPassivation layer, PECVD growth, coats entire table top, and electrify insulating effect, and there are wide 110 μm of electrical pumpings Window；
One front electrode, electron beam evaporation 400nmTi/Au electrode, power-up 5 μm of Au of plating, window area connect with contact layer Touching；
One rear electrode, thermal evaporation 300nm AuGeNi/Au, thermal annealing and substrate form Ohmic contact, and uniformly preparation exists Substrate back；
One is made in the two-dimensional photon quasi-crystalline substance array of upper limiting layer, selects ten double stampfli type photon quasi-crystalline substances, primitive unit cell 2 μm of parameter；Quasi-crystalline substance region is 8 μm wide, the uniform array at 15 μm of interval.
Using finite element method software (COMSOL) progress pattern analysis as a result, wide area's laser near field is modulated to 5 It is a to be superimposed with relevant basic mode, as shown in Fig. 3 (a), according to far and near field Fourier transformation relationship, Fourier's change is carried out near field It changes, can get the lowest order super-mode far field of same-phase coherent superposition, as shown in Fig. 3 (b).This makes it possible to obtain the wide Qu great Gong of single-lobe output Rate quantum cascade laser.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical scheme and beneficial effects Describe in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in protection of the invention Within the scope of.

Claims (5)

1.一种二维光子准晶宽区半导体激光器，包括：1. A two-dimensional photonic quasicrystal wide-area semiconductor laser, comprising: 一衬底(01)，能够导电，材质是InP、GaAs、GaN、GaSb或InAs；A substrate (01), capable of conducting electricity, the material is InP, GaAs, GaN, GaSb or InAs; 一下波导(02)；next waveguide(02); 一下限制层(03)，其有效折射率高于有源区，可增强光模式限制；A lower confinement layer (03), whose effective refractive index is higher than that of the active region, can enhance light mode confinement; 一有源区(04)，器件发光区域，是各种半导体带间或子带间发光的有源区结构；An active region (04), the device light-emitting region, is an active region structure that emits light between various semiconductor bands or between sub-bands; 一上限制层(05)，作用同下限制层，同时二维光子准晶制作于其上；an upper confinement layer (05), which functions as the lower confinement layer, and the two-dimensional photonic quasicrystal is fabricated on it; 一上波导(06)，生长于二维光子准晶制作之后；an upper waveguide (06), grown after the two-dimensional photonic quasicrystal is fabricated; 一接触层(07)，高掺杂材料，易与上电极形成欧姆接触；a contact layer (07), a highly doped material, which is easy to form an ohmic contact with the upper electrode; 一钝化层(08)，包覆整个台面，起电绝缘作用，留有电注入窗口；a passivation layer (08), covering the entire mesa, acting as an electrical insulation, leaving an electrical injection window; 一正面电极(09)，均匀制备在钝化层(08)之上，窗口区域与接触层(07)接触；a front electrode (09), uniformly prepared on the passivation layer (08), the window area is in contact with the contact layer (07); 一背面电极(10)，均匀制备在衬底(01)背面；a back electrode (10), uniformly prepared on the back of the substrate (01); 一制作于上限制层(05)的二维光子准晶阵列(11)，其光子准晶参数、区域宽度、间隔以及是否周期性视激光器波长和波导结构而不同；A two-dimensional photonic quasicrystal array (11) fabricated on the upper confinement layer (05), the photonic quasicrystal parameters, region width, interval and periodicity of the photonic quasicrystals vary depending on the wavelength of the laser and the structure of the waveguide; 其中，该二维光子准晶阵列(11)调制该二维光子准晶宽区半导体激光器横模，将腔内光模式调制成为类似相干阵列的基超模光场模式。Wherein, the two-dimensional photonic quasi-crystal array (11) modulates the transverse mode of the two-dimensional photonic quasi-crystal wide-area semiconductor laser, and modulates the intra-cavity optical mode into a fundamental supermode optical field mode similar to a coherent array. 2.如权利要求1所述的二维光子准晶宽区半导体激光器结构，其中所述的上、下限制层(05 )、(03 )的材料为折射率高于有源区的材料，上、下限制层(05 )、(03 )在一个真空波长范围内且厚度一致。2. The two-dimensional photonic quasi-crystal wide-area semiconductor laser structure according to claim 1, wherein the material of the upper and lower confinement layers (05), (03) is a material with a higher refractive index than the active region, and the upper , the lower confinement layers (05), (03) are in a vacuum wavelength range and have the same thickness. 3.如权利要求2所述的二维光子准晶宽区半导体激光器结构，其中所述的二维光子准晶为按照准晶对称性排列的刻蚀孔，深度为上限制层(05)厚度的70％以上，在上波导生长过程中孔内填充上波导材料。3. The two-dimensional photonic quasi-crystal wide-area semiconductor laser structure as claimed in claim 2, wherein the two-dimensional photonic quasi-crystal is an etching hole arranged according to the quasi-crystal symmetry, and the depth is the upper confinement layer (05) thickness More than 70% of the upper waveguide material is filled in the holes during the upper waveguide growth process. 4.如权利要求3所述的二维光子准晶宽区半导体激光器结构，其中所述的二维光子准晶的对称性包括五重、八重、十重或十二重旋转对称性。4. The two-dimensional photonic quasicrystal wide-area semiconductor laser structure according to claim 3, wherein the symmetry of the two-dimensional photonic quasicrystal comprises fivefold, eightfold, tenfold or twelvefold rotational symmetry. 5.如权利要求1所述的二维光子准晶宽区半导体激光器结构在各波段各种类型的半导体激光器中的应用。5. The application of the two-dimensional photonic quasi-crystal wide-area semiconductor laser structure according to claim 1 in various types of semiconductor lasers in various wavelength bands.
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CN106451074B (en) * 2016-10-31 2019-05-17 中国科学院半导体研究所 A kind of buried heterostructure quantum cascade laser of waveguide optimization
CN108923258B (en) * 2018-07-12 2020-11-03 华南师范大学 Design method of trap type double-phonon active region energy level structure in terahertz quantum cascade laser

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CN102025110A (en) * 2009-09-09 2011-04-20 中国科学院半导体研究所 Inclined cavity surface two-dimensional photonic crystal distribution feedback quantum cascade laser and preparation method
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CN103532008A (en) * 2013-10-23 2014-01-22 中国科学院半导体研究所 Low-divergence-angle distributed feedback quantum cascade laser structure and manufacturing method

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