CN106205912A - A kind of parallel structure overflow protecting element - Google Patents
A kind of parallel structure overflow protecting element Download PDFInfo
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- CN106205912A CN106205912A CN201610588079.3A CN201610588079A CN106205912A CN 106205912 A CN106205912 A CN 106205912A CN 201610588079 A CN201610588079 A CN 201610588079A CN 106205912 A CN106205912 A CN 106205912A
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- 229920000642 polymer Polymers 0.000 claims abstract description 117
- 239000011159 matrix material Substances 0.000 claims abstract description 50
- 230000000694 effects Effects 0.000 claims abstract description 9
- 239000011888 foil Substances 0.000 claims description 31
- -1 polyethylene Polymers 0.000 claims description 24
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 13
- 239000002131 composite material Substances 0.000 claims description 12
- 238000009413 insulation Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 239000011231 conductive filler Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910000679 solder Inorganic materials 0.000 claims description 8
- 239000004698 Polyethylene Substances 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229920000573 polyethylene Polymers 0.000 claims description 7
- 239000011889 copper foil Substances 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 6
- 229920001707 polybutylene terephthalate Polymers 0.000 claims description 6
- 239000004743 Polypropylene Substances 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- 229920001577 copolymer Polymers 0.000 claims description 5
- MIZLGWKEZAPEFJ-UHFFFAOYSA-N 1,1,2-trifluoroethene Chemical group FC=C(F)F MIZLGWKEZAPEFJ-UHFFFAOYSA-N 0.000 claims description 4
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 4
- 239000004709 Chlorinated polyethylene Substances 0.000 claims description 4
- 239000004952 Polyamide Substances 0.000 claims description 4
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 4
- 239000004793 Polystyrene Substances 0.000 claims description 4
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 229920006242 ethylene acrylic acid copolymer Polymers 0.000 claims description 4
- 239000000945 filler Substances 0.000 claims description 4
- 229920001912 maleic anhydride grafted polyethylene Polymers 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 229920001568 phenolic resin Polymers 0.000 claims description 4
- 239000005011 phenolic resin Substances 0.000 claims description 4
- 229950000845 politef Drugs 0.000 claims description 4
- 229920002647 polyamide Polymers 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 229920006324 polyoxymethylene Polymers 0.000 claims description 4
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 4
- 229920001155 polypropylene Polymers 0.000 claims description 4
- 229920002223 polystyrene Polymers 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 3
- 229920013646 Hycar Polymers 0.000 claims description 3
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 3
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 claims description 3
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 claims description 3
- 150000001336 alkenes Chemical class 0.000 claims description 3
- 239000006229 carbon black Substances 0.000 claims description 3
- 239000004568 cement Substances 0.000 claims description 3
- 239000005038 ethylene vinyl acetate Substances 0.000 claims description 3
- 238000007731 hot pressing Methods 0.000 claims description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 3
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 claims description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 3
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 3
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 3
- 229920006380 polyphenylene oxide Polymers 0.000 claims description 3
- 229920002620 polyvinyl fluoride Polymers 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910004247 CaCu Inorganic materials 0.000 claims description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 2
- 229910052454 barium strontium titanate Inorganic materials 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229910021389 graphene Inorganic materials 0.000 claims description 2
- 239000013528 metallic particle Substances 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 238000005325 percolation Methods 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 claims 2
- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical group FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 claims 2
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 235000013339 cereals Nutrition 0.000 claims 1
- 230000000994 depressogenic effect Effects 0.000 claims 1
- 229920001038 ethylene copolymer Polymers 0.000 claims 1
- 235000013312 flour Nutrition 0.000 claims 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims 1
- 238000006116 polymerization reaction Methods 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 230000000087 stabilizing effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 229920001903 high density polyethylene Polymers 0.000 description 6
- 239000004700 high-density polyethylene Substances 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 239000002033 PVDF binder Substances 0.000 description 3
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000001012 protector Effects 0.000 description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 2
- 229910015846 BaxSr1-xTiO3 Inorganic materials 0.000 description 1
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 101000669528 Homo sapiens Tachykinin-4 Proteins 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- OKUGPJPKMAEJOE-UHFFFAOYSA-N S-propyl dipropylcarbamothioate Chemical compound CCCSC(=O)N(CCC)CCC OKUGPJPKMAEJOE-UHFFFAOYSA-N 0.000 description 1
- 102100039365 Tachykinin-4 Human genes 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229920000891 common polymer Polymers 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000011858 nanopowder Substances 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 229920013636 polyphenyl ether polymer Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 230000000306 recurrent effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/04—Carbon
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/10—Metal compounds
- C08K3/14—Carbides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
- H01C7/028—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient consisting of organic substances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/13—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material current responsive
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2237—Oxides; Hydroxides of metals of titanium
- C08K2003/2241—Titanium dioxide
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2207/00—Properties characterising the ingredient of the composition
- C08L2207/06—Properties of polyethylene
- C08L2207/062—HDPE
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Thermistors And Varistors (AREA)
Abstract
The present invention relates to a kind of parallel structure overflow protecting element, comprise: at least one polymer matrix PTC chip, and at least one polymer base electric capacity chip, in element, polymer matrix PTC chip and polymer base electric capacity chip are connected in parallel.Play counteracting peak current, suitably slow down the effect of PTC movement time.When element is under smooth working state, polymer matrix PTC chip turns on, and polymer base electric capacity chip is inoperative；When there is short time spikes electric current, polymer base electric capacity chip charges, and plays stabilizing circuit and the effect of protection PTC chip；When long-time current state, PTC chip is crossed stream and is significantly risen resistance cut-out circuit, plays the effect of protection circuit.
Description
Technical field
The present invention relates to a kind of parallel structure overflow protecting element, belong to electronics and materialogy technical field.
Background technology
Polymer matrix PTC composite is typically with polymer as matrix, and admixture conductive filler is made wherein.There is electricity
The conducing composite material of resistance positive temperature coefficient can maintain extremely low resistance value at a normal temperature, and has variations in temperature reaction
Sharp characteristic, i.e. when occurring overcurrent to be rapidly heated in circuit, its resistance can increase to a high value moment, makes at circuit
In off state, for resettable fuse, to reach the purpose of protection circuit element.
When the circuit that Polymeric PTC resistive accesses plays pendulum, recurrent peak current impact can make
Obtain the deterioration of PTC resistor performance fatigue even to burn, bring unsafe factor.For the PTC chip of same recipe composition, if wanted
Increase the pressure energy of resistance to fluidity of chip, need to increase thickness, improve component resistance, the holding current reduction of element can be made.Work
Also the SMD element using multiple chips in parallel is had can to improve same size element current bearing capacity in industry, but due to reality
There is certain discreteness in material and manufacturing process, electric current holding, acting characteristic and the pressure performance of different sandwich layers are the most difficult
To accomplish accurately to mate, actual performance is compared single-layer element and is promoted limited.
Polymer base composite dielectric material is used for making all kinds of passive embedded dielectric capacitance element, the high dielectric of main employing
The ferroelectric ceramic powder of constant and polymeric matrix carry out compound preparation, such as PVDF-BaxSr1-xTiO3 composite dielectric material, also
The conductive materials such as utilization Ni, Al, Ag, C less than percolation threshold content are had to be combined, with polymer, the seepage flow type composite dielectric obtained
Material.
Summary of the invention
Present invention aim at: a kind of parallel structure overflow protecting element is provided, do not reducing the shape keeping electric current
Under state, can have anti-peak current impact property.
The object of the invention is realized by following proposal: provides a kind of parallel structure overflow protecting element, comprises:
At least one polymer matrix PTC chip, its comprise the first electrode foil, the second electrode foil and one layer be clipped in this first and second
The material layer with positive temperature coefficient effect between electrode foil；
At least one polymer base electric capacity chip, it comprises the 3rd electrode foil, the 4th electrode foil and one layer and is clipped in the 3rd and
Polymer based insulation dielectric substance between four electrode foils；
First metal pins, is simultaneously connected with an electrode foil of polymer matrix PTC chip and polymer base electric capacity chip；
Second metal pins, is simultaneously connected with polymer matrix PTC chip and polymer another electrode foil of base electric capacity chip, in element
Polymer matrix PTC chip and polymer base electric capacity chip are connected in parallel.
The present invention utilizes polymeric media electric capacity to combine with PPTC to improve electronic circuit anti-peak current impact property, should
The operation principle of element is: polymer matrix PTC chip turns on, and polymer base electric capacity chip is inoperative；When short time spikes occurs
During electric current, polymer base electric capacity chip charges, and plays stabilizing circuit and the effect of protection PTC chip；When long-time big electric current shape
During state, PTC chip is crossed stream and is significantly risen resistance cut-out circuit, plays the effect of protection circuit.
Polymer matrix PTC chip is constituted " three by Positive temperature coefficient composite material layer and first, second metal electrode paper tinsel
Mingzhi " structure.The polymeric matrix preferably polyethylene of Positive temperature coefficient composite material layer, chlorinated polyethylene, oxidic polyethylene, poly-
Vinyl chloride, hycar, acrylonitrile-butadiene-styrene copolymer, polystyrene, Merlon, polyamides
Amine, polyethylene terephthalate, polybutylene terephthalate (PBT), polyphenylene oxide, polyphenylene sulfide, polyformaldehyde, phenolic resin,
Politef, tetrafluoraoethylene-hexafluoropropylene copolymer, poly-trifluoro-ethylene, polyvinyl fluoride, maleic anhydride grafted polyethylene, poly-
Propylene, Kynoar, epoxy resin, ethylene-vinyl acetate copolymer, polymethyl methacrylate, ethylene-acrylic acid copolymer
One in thing and mixture thereof；The preferred metallic particles of conductive filler, metal carbide particles, metal boride particles, white carbon black,
Chopped CNT, Graphene etc., grain diameter is between 0.05 micron to 100 micron, and particle diameter draw ratio is less than 500, conduction
The specific insulation of filler is not more than 200 μ Ω × cm, conductive filler account for the percent by volume of Positive temperature coefficient composite material between
25%~85%.First, second metal electrode paper tinsel is nickel foil or nickel plating Copper Foil.
Polymer base electric capacity chip is to be made up of polymer based insulation dielectric material layer and the three, the 4th metal electrode paper tinsels
" sandwich " structure.The body resistivity of polymer based insulation dielectric material layer is more than 106Ω × cm, the most poly-second of polymer
Alkene, chlorinated polyethylene, oxidic polyethylene, polrvinyl chloride, hycar, acrylonitrile-butadiene-styrene (ABS) are common
Polymers, polystyrene, Merlon, polyamide, polyethylene terephthalate, polybutylene terephthalate (PBT), polyphenyl
Ether, polyphenylene sulfide, polyformaldehyde, phenolic resin, politef, tetrafluoraoethylene-hexafluoropropylene copolymer, poly-trifluoro-ethylene, poly-
Fluorothene, maleic anhydride grafted polyethylene, polypropylene, Kynoar, epoxy resin, ethylene-vinyl acetate copolymer, poly-first
One in base acrylic acid methyl ester., ethylene-acrylic acid copolymer and mixture thereof, the preferred silicon dioxide of filler, zirconium dioxide, two
The insulation dielectric micro-nano powders such as titanium oxide, barium strontium titanate, CaCu 3 Ti 4 O, lead zirconate titanate or volume fraction are oozed less than room temperature
The conductive filler of stream threshold value 30%.Three, the 4th metal electrode paper tinsels are nickel foil or nickel plating Copper Foil.
When described polymer matrix PTC chip is more than two, described polymer base electric capacity chip is also more than two,
Polymer matrix PTC chip and polymer base electric capacity chip are intervally arranged and all use parallel way to access circuit.That is: can in element
To have more than polymer matrix PTC chip and the polymer base electric capacity chip of one, all chips all use parallel way to access electricity
Road.
On the basis of such scheme, the present invention uses sandwich structure polymer matrix PTC chip and polymer base electric capacity
Chip, uses figure transfer techniques to carve insulation tank the polymer matrix PTC chip made and polymer base electric capacity chip, will
Polymer matrix PTC chip after Tu Xinghua and polymer base electric capacity chip insulating cement hot pressing, cross boring copper facing mode and obtain
Polymer matrix PTC chip and the electrical structure of polymer base electric capacity chip parallel connection, by printing solder mask, solidification solder mask
Mode obtain SMD parallel-connection structure overflow protecting element.
The superior of the present invention is: by polymer matrix PTC material and polymer electric capacity parallel-connection structure, play counteracting spike
Electric current, suitably slows down the effect of PTC movement time.When element is under smooth working state, element can not reduce guarantor
Eliminating the impact of short time heavy current impact under the state holding electric current, when long-time current state, PTC chip crosses stream significantly
Degree rises resistance and cuts off circuit, protection circuit.
Accompanying drawing explanation
Fig. 1 embodiment 1 parallel structure overflow protecting element structural representation；
Fig. 2 embodiment 2 parallel structure overflow protecting element structural representation；
Fig. 3 embodiment 3 parallel structure overflow protecting element structural representation；
Fig. 4 embodiment 4 parallel structure overflow protecting element structural representation；
Fig. 5 embodiment 5 parallel structure overflow protecting element structural representation；
Label declaration in figure:
1,1 ' polymer matrix PTC core；
11,12,13 first, second, third polymer matrix PTC core；
2,2 ' polymer base electric capacity core；
21,22 first, second polymer base electric capacity core；
31,32,33,34 first, second, third and fourth electrode foil；
Electrode foil in 31 ', 32 ', 33 ', 34 ' first, second, third and fourth；
41,41 ', 41 ' ' the first pin；42,42 ', 42 ' ' the second pin；
5 insulating barriers；
51,52,53 first, second, third insulating barrier；
61,62 first, second solder mask layer.
Detailed description of the invention
Embodiment 1
As shown in Fig. 1 embodiment 1 parallel structure overflow protecting element structural representation:
A kind of parallel-connection structure overflow protecting element with the impact of anti-peak current, as shown in Figure 1: polymer matrix PTC core 1 is
High density polyethylene (HDPE) (HDPE) and tungsten carbide ceramics powder blended compound material, polymer base electric capacity core 2 is polypropylene and dioxy
Changing titanium blended compound material, first, second, third and fourth electrode foil 31,32,33,34 is nickel plating Copper Foil.By polymer base
PTC core 1 and first, second electrode foil 31,32 fitted up and down with it constitute polymer matrix PTC chip, by polymer base electricity
Holding core 2 and the third and fourth electrode foil 33,34 fitted up and down with it constitutes polymer base electric capacity chip, the first pin 41 is
U-shaped pin, first, second pin 41,42 is copper electrode, the first pin 41 respectively with first and the 4th electrode foil 31,34 electric
Conducting, has an insulating barrier 5 in the U-shaped bottom of the first pin 41, makes the first pin 41 electric with second, third electrode foil 32,33
Insulation, accesses circuit post-consumer polymer base PTC chip and polymer base electric capacity chip in being arranged in parallel.
Embodiment 2
Shown in Fig. 2 embodiment 2 parallel structure overflow protecting element structural representation:
A kind of have anti-peak current impact parallel-connection structure overflow protecting element, structure as in figure 2 it is shown, embodiment basis
On, simply the first pin 41 ' is V-type, therefore can ensure that with the first, the 4th electrode foil 31,34 electrical connection after, not with the
Two, the 3rd electrode foil 32,33 electrical connection, can omit insulating barrier: polymer matrix PTC core 1 is PVDF and carbon black composite
Material, polymer base electric capacity core 2 is PVDF and silicon dioxide blended compound material, first, second, third and fourth electrode foil
31,32,33,34 is nickel foil.First pin 41 ' is V-type pin, first, second pin 41 ', 42 is copper electrode, the first pin
41 ' respectively with first and the 4th electrode foil 31,34 electrically conducting, and bottom the V-type of the first pin 41 ' with second, third electricity
Pole paper tinsel 32,33 contacts, and after accessing circuit, polymer matrix PTC chip and polymer base electric capacity chip are in being arranged in parallel.
Embodiment 3
Polymer matrix PTC core is Nylon 1012 and titanium carbide ceramic blended compound material, and polymer base electric capacity core is
PVDF and lead zirconate titanate blended compound material.Shown in Fig. 3 embodiment 3 parallel structure overflow protecting element structural representation:
A kind of parallel-connection structure overflow protecting element with the impact of anti-peak current, on the basis of embodiment one, adds one
Polymer matrix PTC chip, the second pin 42 ' structure is identical, as shown in Figure 3 with the first pin 41: first, second polymer base
PTC core 11,12 comes the upper and lower of polymer base electric capacity core 2, the first pin 41 and the first polymer matrix PTC core 11 and
Polymer base electric capacity core 2 second pins in parallel structure.First and second pins 41,42 ' are U-shaped copper electrode, first and
First, second insulating barrier 51,52, first, second polymer matrix PTC core is set up separately bottom the U-shaped copper electrode of two pins 41,42 '
11,12 is all in parallel with polymer base electric capacity core 2, not only possesses the performance of anti-peak current impact, improves the guarantor of element simultaneously
Hold electric current, it is achieved the electric discharge of big electric current can realize overheat protector under low current simultaneously.
Embodiment 4
As shown in Fig. 4 embodiment 4 parallel structure overflow protecting element structural representation:
A kind of parallel-connection structure overflow protecting element with the impact of anti-peak current, for SMD parallel-connection structure, polymer matrix PTC
Core 1 ' is high density polyethylene (HDPE) (HDPE) and tungsten carbide ceramics powder blended compound material, and polymer base electric capacity core 2 ' is poly-third
Alkene and titanium dioxide blending composite, each core be equipped with interior electrode foil up and down, this interior electrode foil is nickel plating Copper Foil.Its
In, in first, second, electrode foil 31 ', 32 ' is fitted in two of polymer matrix PTC core 1 ', electrode foil in third and fourth
33 ', 34 ' be fitted in polymer base electric capacity core 2 ' two, in second, third between electrode 32 ', 33 ', and first,
Be equipped with insulating barrier between electrode and first, second solder mask 61,62 in 4th, formed first, second, third insulating barrier 51,52,
53。
Preparation method is: use sandwich structure polymer matrix PTC chip and polymer base electric capacity chip, poly-by make
Compound base PTC chip and polymer base electric capacity chip use figure transfer techniques to carve insulation tank, by the polymer after graphical
Base PTC chip and polymer base electric capacity chip insulating cement hot pressing.Polymer matrix PTC chip is obtained through boring copper facing mode
The electrical structure in parallel with polymer base electric capacity chip, obtains such as Fig. 4 by the mode of printing solder mask, solidification solder mask
Shown SMD parallel-connection structure overflow protecting element.
Embodiment 5
As shown in Fig. 5 embodiment 5 parallel structure overflow protecting element structural representation:
A kind of have anti-peak current impact parallel-connection structure overflow protecting element, element be three polymer matrix PTC cores and
Two polymer base electric capacity core parallel-connection structures, including: first, second, third polymer matrix PTC core 11,12,13, first,
Second polymer base electric capacity core 21,22, polymer matrix PTC chip and polymer base electric capacity chip are intervally arranged and all use also
Connection mode accesses circuit, as it is shown in figure 5, the first pin 41 ' ' ' and first, second, third polymer matrix PTC core 11,12,13
The second electrode, and first and second polymer base electric capacity core 21,22 first electrode electrical connection；Second pin 42 ' ' ' with
First electrode of first, second, third polymer matrix PTC core 11,12,13, and first and second polymer base electric capacity core
21, the second electrode electrical connection of 22；Each chip uses parallel way to access circuit.
Multiple polymer matrix PTC cores are for the holding electric current of lift elements, and the electric discharge meeting big electric current simultaneously can be real
Overheat protector under existing low current；Multiple polymer base electric capacity cores promote the buffer capacity of peak current further.Element is used for
In high current load and the most unstable circuit environment.
Present disclosure and feature have revealed that as above, but the present invention above described only briefly or pertains only to this
The specific part of invention, inventive feature may be more more than what content disclosed herein related to.Therefore, the protection model of the present invention
Enclose the content should being not limited to disclosed in embodiment, and the combination of all the elements embodied in different piece should be included in, with
And the various replacement without departing substantially from the present invention and modification, and contained by claims of the present invention.
Claims (5)
1. a parallel structure overflow protecting element, it is characterised in that: element comprises:
At least one polymer matrix PTC chip, its comprise the first electrode foil, the second electrode foil and one layer be clipped in this first and second
The material layer with positive temperature coefficient effect between electrode foil；
At least one polymer base electric capacity chip, it comprises the 3rd electrode foil, the 4th electrode foil and one layer and is clipped in the 3rd and
Polymer based insulation dielectric substance between four electrode foils；
First metal pins, is simultaneously connected with an electrode foil of polymer matrix PTC chip and polymer base electric capacity chip；
Second metal pins, is simultaneously connected with polymer matrix PTC chip and another electrode foil of polymer base electric capacity chip, element
Middle polymer matrix PTC chip and polymer base electric capacity chip are connected in parallel.
A kind of parallel structure overflow protecting element, it is characterised in that: described polymer base
The material layer in PTC chip with positive temperature coefficient effect includes polymeric substrate and conductive filler, wherein, described positive temperature
The polymeric substrate preferably polyethylene of coefficient composite layer, chlorinated polyethylene, oxidic polyethylene, polrvinyl chloride, butadiene-the third
Alkene lonitrile copolymer, acrylonitrile-butadiene-styrene copolymer, polystyrene, Merlon, polyamide, poly terephthalic acid second
Diol ester, polybutylene terephthalate (PBT), polyphenylene oxide, polyphenylene sulfide, polyformaldehyde, phenolic resin, politef, tetrafluoro second
Alkene-hexafluoropropylene copolymer, poly-trifluoro-ethylene, polyvinyl fluoride, maleic anhydride grafted polyethylene, polypropylene, Kynoar, ring
One in epoxy resins, ethylene-vinyl acetate copolymer, polymethyl methacrylate, ethylene-acrylic acid copolymer and mixing thereof
Thing；The preferred metallic particles of described conductive filler, metal carbide particles, metal boride particles, white carbon black, chopped carbon nanometer
Pipe, Graphene etc., grain diameter is between 0.05 micron to 100 micron, and particle diameter draw ratio is less than 500, the volume of conductive filler
Resistivity is not more than 200 μ Ω × cm, and conductive filler accounts for the percent by volume of Positive temperature coefficient composite material between 25% ~ 85%；Its
First, second metal electrode paper tinsel is nickel foil or nickel plating Copper Foil.
A kind of parallel structure overflow protecting element, it is characterised in that: described polymer base
In electric capacity chip, the body resistivity of polymer based insulation dielectric substance is more than 106Ω × cm, including polymer and filler, its
In, described polymer preferably polyethylene, chlorinated polyethylene, oxidic polyethylene, polrvinyl chloride, hycar,
Acrylonitrile-butadiene-styrene copolymer, polystyrene, Merlon, polyamide, polyethylene terephthalate, poly-right
Benzene dicarboxylic acid butanediol ester, polyphenylene oxide, polyphenylene sulfide, polyformaldehyde, phenolic resin, politef, hexafluoropropylene (HFP)/tetrafluoroethylene (TFE)
Copolymer, poly-trifluoro-ethylene, polyvinyl fluoride, maleic anhydride grafted polyethylene, polypropylene, Kynoar, epoxy resin, second
One in alkene-acetate ethylene copolymer, polymethyl methacrylate, ethylene-acrylic acid copolymer and mixture thereof；Described
The preferred silicon dioxide of filler, zirconium dioxide, titanium dioxide, barium strontium titanate, CaCu 3 Ti 4 O, the insulation dielectric micro-nano of lead zirconate titanate
Rice flour end or volume fraction less than the conductive filler of room temperature percolation threshold 30%, its three, the 4th metal electrode paper tinsel be nickel foil or
Nickel plating Copper Foil.
A kind of parallel structure overflow protecting element, it is characterised in that: when described polymer
Base PTC chip is more than two, and described polymer base electric capacity chip is also more than two, polymer matrix PTC chip and polymerization
Thing base electric capacity chip is intervally arranged and all uses parallel way to access circuit.
5. according to parallel structure overflow protecting element a kind of described in claim 1 or 4, it is characterised in that: use sandwich
Structure polymer matrix PTC chip and polymer base electric capacity chip, by the polymer matrix PTC chip made and polymer base electricity
Holding chip uses figure transfer techniques to carve insulation tank, by the polymer matrix PTC chip after graphical and polymer base capacitance core
Sheet insulating cement hot pressing, crosses boring copper facing mode and obtains polymer matrix PTC chip and the electricity of polymer base electric capacity chip parallel connection
Depressed structure, obtains SMD parallel-connection structure overflow protecting element by the mode of printing solder mask, solidification solder mask.
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| CN109786953A (en) * | 2019-01-23 | 2019-05-21 | 曹丹旦 | A kind of microlayer polymeric composite wave dielectric chip and its application |
| CN110885581A (en) * | 2018-09-10 | 2020-03-17 | 宁波其兰文化发展有限公司 | Wear-resistant composite conductive coating and preparation method thereof |
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