CN106298492B - A method for forming a tri-gate structure - Google Patents
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- CN106298492B CN106298492B CN201610985906.2A CN201610985906A CN106298492B CN 106298492 B CN106298492 B CN 106298492B CN 201610985906 A CN201610985906 A CN 201610985906A CN 106298492 B CN106298492 B CN 106298492B
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Abstract
本发明提供了一种三栅极结构的形成方法，包括：第一步骤：在衬底上依次形成介质层、第一功函数金属层和硬掩膜层；第二步骤：形成硬掩膜层的图案；第三步骤：采用形成图案的硬掩膜层刻蚀第一功函数金属层，以形成第一功函数金属凸块；第四步骤：沉积第二功函数金属层，其中第二功函数金属层与第一功函数金属层为不同材料；第五步骤：对第二功函数金属层进行化学机械研磨，直到露出第一功函数金属凸块；第六步骤：刻蚀第二功函数金属层和介质层，从而形成在第一功函数金属凸块侧壁包围第二功函数金属侧壁的结构。
The invention provides a method for forming a triple-gate structure, comprising: first step: sequentially forming a dielectric layer, a first work function metal layer and a hard mask layer on a substrate; second step: forming a hard mask layer The pattern; the third step: using the patterned hard mask layer to etch the first work function metal layer to form the first work function metal bump; the fourth step: depositing the second work function metal layer, wherein the second work function metal layer The functional metal layer and the first work function metal layer are made of different materials; the fifth step: performing chemical mechanical polishing on the second work function metal layer until the first work function metal bump is exposed; the sixth step: etching the second work function metal layer The metal layer and the dielectric layer form a structure in which the sidewall of the metal bump with the first work function surrounds the sidewall of the metal with the second work function.
Description
技术领域technical field
本发明涉及半导体制造领域，具体涉及栅极结构的优化；更具体地说，本发明涉及一种三栅极结构的形成方法。The invention relates to the field of semiconductor manufacturing, in particular to the optimization of gate structures; more specifically, the invention relates to a method for forming a triple gate structure.
背景技术Background technique
当栅极的长度减小到与沟道的深度在一个数量级的时候，就会产生短沟道效应(short channel effect)。阈值电压漂移，漏电流增大。目前，已经量产的技术节点均采用单一功函数的栅极材料，但随着栅极尺寸的进一步减小，短沟道效应越发不可忽视，具有水平可变功函数的栅极结构被提了出来。研究表明采用双栅极(dual gate)结构可以屏蔽漏极电压，从而有效的克服短沟道效应。所谓双栅极结构，就是用具有不同功函数的材料作为栅极，在接近源极和漏极的沟道上得到不同的阈值电压。相对于双栅极这种不对称的结构，还有专利报道过三栅极的对称或不对称结构。When the length of the gate is reduced to an order of magnitude with the depth of the channel, a short channel effect will occur. The threshold voltage shifts and the leakage current increases. At present, the technology nodes that have been mass-produced all use gate materials with a single work function, but with the further reduction of the gate size, the short-channel effect cannot be ignored, and the gate structure with a horizontally variable work function has been proposed. come out. Studies have shown that the use of a dual gate (dual gate) structure can shield the drain voltage, thereby effectively overcoming the short channel effect. The so-called double-gate structure is to use materials with different work functions as gates to obtain different threshold voltages on channels close to the source and drain. Compared with the asymmetric structure of the double gate, there are also patents reporting the symmetrical or asymmetric structure of the tri-gate.
但是，如何从整合的角度制造出这种栅极结构还是个难题。有专利提出针对栅极最后(gate-last scheme)的整合方案，利用层间介质层作为硬掩膜，用倾斜角度的离子注入在栅极的不同部分产生不同的功函数。However, how to manufacture this gate structure from an integration point of view is still a difficult problem. Some patents propose an integration scheme for the gate-last scheme, using the interlayer dielectric layer as a hard mask, and ion implantation at an oblique angle to generate different work functions in different parts of the gate.
发明内容Contents of the invention
本发明所要解决的技术问题是针对现有技术中存在上述缺陷，提供一种更加方便的制造方法，能够在不增加光罩的基础上，通过一道硬掩膜，让栅极在沿着沟道的水平方向得到不同的功函数金属层。The technical problem to be solved by the present invention is to provide a more convenient manufacturing method for the above-mentioned defects in the prior art, which can make the grid along the channel through a hard mask without adding a photomask. Metal layers with different work functions are obtained in the horizontal direction.
为了实现上述技术目的，根据本发明，提供了一种三栅极结构的形成方法，包括：第一步骤：在衬底上依次形成介质层、第一功函数金属层和硬掩膜层；第二步骤：形成硬掩膜层的图案；第三步骤：采用形成图案的硬掩膜层刻蚀第一功函数金属层，以形成第一功函数金属凸块；第四步骤：沉积第二功函数金属层，其中第二功函数金属层与第一功函数金属层为不同材料；第五步骤：对第二功函数金属层进行化学机械研磨，直到露出第一功函数金属凸块；第六步骤：刻蚀第二功函数金属层和介质层，从而形成在第一功函数金属凸块侧壁包围第二功函数金属侧壁的结构。In order to achieve the above technical purpose, according to the present invention, a method for forming a triple gate structure is provided, comprising: a first step: sequentially forming a dielectric layer, a first work function metal layer and a hard mask layer on a substrate; The second step: forming the pattern of the hard mask layer; the third step: using the patterned hard mask layer to etch the first work function metal layer to form the first work function metal bump; the fourth step: depositing the second work function metal layer The function metal layer, wherein the second work function metal layer and the first work function metal layer are made of different materials; the fifth step: performing chemical mechanical polishing on the second work function metal layer until the first work function metal bump is exposed; the sixth Step: etching the second work function metal layer and the dielectric layer, so as to form a structure surrounding the second work function metal side wall on the side wall of the first work function metal bump.
优选地，第一功函数金属层和第二功函数金属层是金属氮化物、金属硅化物、单质金属或者金属合金中的一种。Preferably, the first work function metal layer and the second work function metal layer are one of metal nitride, metal silicide, single metal or metal alloy.
优选地，第一功函数金属层和第二功函数金属层的厚度为2nm～nm。Preferably, the thickness of the first work function metal layer and the second work function metal layer is 2 nm˜nm.
为了实现上述技术目的，根据本发明，还提供了一种三栅极结构的形成方法，其特征在于包括：第一步骤：在衬底上依次形成介质层、第一功函数金属层和硬掩膜层；第二步骤：形成硬掩膜层的图案；第三步骤：采用形成图案的硬掩膜层刻蚀第一功函数金属层，以形成凹槽；第四步骤：沉积第二功函数金属层以填充凹槽，其中第二功函数金属层与第一功函数金属层为不同材料；第五步骤：对第二功函数金属层进行化学机械研磨以露出第一功函数金属层；第六步骤：刻蚀第一功函数金属层和介质层，从而形成在第一功函数金属凸块侧壁包围第一功函数金属侧壁的结构。In order to achieve the above technical purpose, according to the present invention, there is also provided a method for forming a triple gate structure, which is characterized in that it includes: a first step: sequentially forming a dielectric layer, a first work function metal layer and a hard mask on a substrate film layer; the second step: forming a pattern of the hard mask layer; the third step: using the patterned hard mask layer to etch the first work function metal layer to form grooves; the fourth step: depositing the second work function The metal layer is used to fill the groove, wherein the second work function metal layer and the first work function metal layer are made of different materials; the fifth step: performing chemical mechanical polishing on the second work function metal layer to expose the first work function metal layer; the second Sixth step: etching the first work function metal layer and the dielectric layer, so as to form a structure surrounding the first work function metal side wall on the side wall of the first work function metal bump.
优选地，第一功函数金属层和第二功函数金属层是金属氮化物、金属硅化物、单质金属或者金属合金中的一种。Preferably, the first work function metal layer and the second work function metal layer are one of metal nitride, metal silicide, single metal or metal alloy.
优选地，第一功函数金属层和第二功函数金属层的厚度为2nm～nm。Preferably, the thickness of the first work function metal layer and the second work function metal layer is 2 nm˜nm.
为了实现上述技术目的，根据本发明，还提供了一种三栅极结构的形成方法，其特征在于包括：第一步骤：在衬底上依次形成介质层、第一功函数金属层和硬掩膜层；第二步骤：形成硬掩膜层的图案；第三步骤：采用形成图案的硬掩膜层刻蚀第一功函数金属层，以形成第一功函数金属凸块；第四步骤：沉积第二功函数金属层，其中第二功函数金属层与第一功函数金属层为不同材料；第五步骤：刻蚀第二功函数金属层和介质层，从而形成在第一功函数金属凸块侧壁包围第二功函数金属侧壁的结构；第六步骤：去除第一功函数金属凸块上的硬掩膜。In order to achieve the above technical purpose, according to the present invention, there is also provided a method for forming a triple gate structure, which is characterized in that it includes: a first step: sequentially forming a dielectric layer, a first work function metal layer and a hard mask on a substrate film layer; the second step: forming a pattern of the hard mask layer; the third step: using the patterned hard mask layer to etch the first work function metal layer to form the first work function metal bump; the fourth step: Depositing a second work function metal layer, wherein the second work function metal layer and the first work function metal layer are made of different materials; the fifth step: etching the second work function metal layer and the dielectric layer, thereby forming the first work function metal layer A structure in which the sidewall of the bump surrounds the sidewall of the second work function metal; the sixth step: removing the hard mask on the bump of the first work function metal.
优选地，第一功函数金属层和第二功函数金属层是金属氮化物、金属硅化物、单质金属或者金属合金中的一种。Preferably, the first work function metal layer and the second work function metal layer are one of metal nitride, metal silicide, single metal or metal alloy.
优选地，第一功函数金属层和第二功函数金属层的厚度为2nm～nm。Preferably, the thickness of the first work function metal layer and the second work function metal layer is 2 nm˜nm.
本发明提供了一种更加方便的制造方法，能够在不增加光罩的基础上，通过一道硬掩膜，让栅极在沿着沟道的水平方向得到不同的功函数金属层。通过使栅极在沿着沟道的水平方向产生不同的功函数，能够得到不同的阈值电压，从而解决由于栅极尺寸减小而带来的一系列问题，如短沟道效应等。The invention provides a more convenient manufacturing method, which can allow the gate to obtain metal layers with different work functions along the horizontal direction of the channel through a hard mask without adding a photomask. By making the gate generate different work functions along the horizontal direction of the channel, different threshold voltages can be obtained, thereby solving a series of problems caused by the reduction of the gate size, such as the short channel effect.
附图说明Description of drawings
结合附图，并通过参考下面的详细描述，将会更容易地对本发明有更完整的理解并且更容易地理解其伴随的优点和特征，其中：A more complete understanding of the invention, and its accompanying advantages and features, will be more readily understood by reference to the following detailed description, taken in conjunction with the accompanying drawings, in which:
图1示意性地示出了根据本发明第一优选实施例的三栅极结构的形成方法的第一步骤。FIG. 1 schematically shows the first step of a method for forming a triple-gate structure according to a first preferred embodiment of the present invention.
图2示意性地示出了根据本发明第一优选实施例的三栅极结构的形成方法的第二步骤。FIG. 2 schematically shows the second step of the method for forming the triple gate structure according to the first preferred embodiment of the present invention.
图3示意性地示出了根据本发明第一优选实施例的三栅极结构的形成方法的第三步骤。FIG. 3 schematically shows the third step of the method for forming the triple gate structure according to the first preferred embodiment of the present invention.
图4示意性地示出了根据本发明第一优选实施例的三栅极结构的形成方法的第四步骤。FIG. 4 schematically shows the fourth step of the method for forming the triple gate structure according to the first preferred embodiment of the present invention.
图5示意性地示出了根据本发明第一优选实施例的三栅极结构的形成方法的第五步骤。FIG. 5 schematically shows the fifth step of the method for forming the triple gate structure according to the first preferred embodiment of the present invention.
图6示意性地示出了根据本发明第一优选实施例的三栅极结构的形成方法的第六步骤。FIG. 6 schematically shows the sixth step of the method for forming the tri-gate structure according to the first preferred embodiment of the present invention.
图7示意性地示出了根据本发明第二优选实施例的三栅极结构的形成方法的第一步骤。Fig. 7 schematically shows the first step of the forming method of the triple gate structure according to the second preferred embodiment of the present invention.
图8示意性地示出了根据本发明第二优选实施例的三栅极结构的形成方法的第二步骤。FIG. 8 schematically shows the second step of the method for forming the triple gate structure according to the second preferred embodiment of the present invention.
图9示意性地示出了根据本发明第二优选实施例的三栅极结构的形成方法的第三步骤。FIG. 9 schematically shows the third step of the method for forming the triple gate structure according to the second preferred embodiment of the present invention.
图10示意性地示出了根据本发明第二优选实施例的三栅极结构的形成方法的第四步骤。FIG. 10 schematically shows the fourth step of the method for forming the triple gate structure according to the second preferred embodiment of the present invention.
图11示意性地示出了根据本发明第二优选实施例的三栅极结构的形成方法的第五步骤。FIG. 11 schematically shows the fifth step of the forming method of the triple gate structure according to the second preferred embodiment of the present invention.
图12示意性地示出了根据本发明第二优选实施例的三栅极结构的形成方法的第六步骤。FIG. 12 schematically shows the sixth step of the method for forming the triple gate structure according to the second preferred embodiment of the present invention.
图13示意性地示出了根据本发明第三优选实施例的三栅极结构的形成方法的第一步骤。Fig. 13 schematically shows the first step of the method for forming the triple gate structure according to the third preferred embodiment of the present invention.
图14示意性地示出了根据本发明第三优选实施例的三栅极结构的形成方法的第二步骤。FIG. 14 schematically shows the second step of the method for forming the triple gate structure according to the third preferred embodiment of the present invention.
图15示意性地示出了根据本发明第三优选实施例的三栅极结构的形成方法的第三步骤。FIG. 15 schematically shows the third step of the method for forming the triple gate structure according to the third preferred embodiment of the present invention.
图16示意性地示出了根据本发明第三优选实施例的三栅极结构的形成方法的第四步骤。FIG. 16 schematically shows the fourth step of the method for forming the triple gate structure according to the third preferred embodiment of the present invention.
图17示意性地示出了根据本发明第三优选实施例的三栅极结构的形成方法的第五步骤。FIG. 17 schematically shows the fifth step of the method for forming the triple gate structure according to the third preferred embodiment of the present invention.
图18示意性地示出了根据本发明第三优选实施例的三栅极结构的形成方法的第六步骤。FIG. 18 schematically shows the sixth step of the method for forming the triple gate structure according to the third preferred embodiment of the present invention.
需要说明的是，附图用于说明本发明，而非限制本发明。注意，表示结构的附图可能并非按比例绘制。并且，附图中，相同或者类似的元件标有相同或者类似的标号。It should be noted that the accompanying drawings are used to illustrate the present invention, but not to limit the present invention. Note that drawings showing structures may not be drawn to scale. And, in the drawings, the same or similar elements are marked with the same or similar symbols.
具体实施方式Detailed ways
为了使本发明的内容更加清楚和易懂，下面结合具体实施例和附图对本发明的内容进行详细描述。In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings.
<第一优选实施例><First preferred embodiment>
图1至图6示意性地示出了根据本发明第一优选实施例的三栅极结构的形成方法的各个步骤。1 to 6 schematically show various steps of a method for forming a tri-gate structure according to a first preferred embodiment of the present invention.
如图1至图6所示，根据本发明第一优选实施例的三栅极结构的形成方法包括：As shown in FIG. 1 to FIG. 6, the method for forming the triple gate structure according to the first preferred embodiment of the present invention includes:
第一步骤：在衬底100上依次形成介质层10、第一功函数金属层20和硬掩膜层30；The first step: sequentially forming a dielectric layer 10, a first work function metal layer 20 and a hard mask layer 30 on a substrate 100;
第二步骤：形成硬掩膜层30的图案；The second step: forming a pattern of the hard mask layer 30;
第三步骤：采用形成图案的硬掩膜层刻蚀第一功函数金属层20，以形成第一功函数金属凸块40；Step 3: Etching the first work function metal layer 20 by using the patterned hard mask layer to form the first work function metal bump 40;
第四步骤：沉积第二功函数金属层50，其中第二功函数金属层50与第一功函数金属层20为不同材料；The fourth step: depositing the second work function metal layer 50, wherein the second work function metal layer 50 and the first work function metal layer 20 are made of different materials;
第五步骤：对第二功函数金属层50进行化学机械研磨，直到露出第一功函数金属凸块40；Fifth step: performing chemical mechanical polishing on the second work function metal layer 50 until the first work function metal bump 40 is exposed;
第六步骤：刻蚀第二功函数金属层50和介质层10，从而形成在第一功函数金属凸块40侧壁包围第二功函数金属侧壁51的结构。Step 6: Etching the second work function metal layer 50 and the dielectric layer 10 to form a structure surrounding the second work function metal sidewall 51 on the sidewall of the first work function metal bump 40 .
优选地，第一功函数金属层20是金属氮化物、金属硅化物、单质金属或者金属合金中的一种。优选地，第一功函数金属层20的厚度为2nm～10nm。Preferably, the first work function metal layer 20 is one of metal nitride, metal silicide, simple metal or metal alloy. Preferably, the thickness of the first work function metal layer 20 is 2 nm˜10 nm.
优选地，第二功函数金属层50是金属氮化物、金属硅化物、单质金属或者金属合金中的一种。优选地，第二功函数金属层50的厚度为2nm～10nm。Preferably, the second work function metal layer 50 is one of metal nitride, metal silicide, simple metal or metal alloy. Preferably, the thickness of the second work function metal layer 50 is 2 nm˜10 nm.
<第二优选实施例><Second Preferred Embodiment>
图7至图12示意性地示出了根据本发明第二优选实施例的三栅极结构的形成方法的各个步骤。7 to 12 schematically illustrate various steps of a method for forming a triple-gate structure according to a second preferred embodiment of the present invention.
如图7至图12所示，根据本发明第二优选实施例的三栅极结构的形成方法包括：As shown in FIG. 7 to FIG. 12 , the method for forming the tri-gate structure according to the second preferred embodiment of the present invention includes:
第一步骤：在衬底100上依次形成介质层10、第一功函数金属层20和硬掩膜层30；The first step: sequentially forming a dielectric layer 10, a first work function metal layer 20 and a hard mask layer 30 on a substrate 100;
第二步骤：形成硬掩膜层30的图案；The second step: forming a pattern of the hard mask layer 30;
第三步骤：采用形成图案的硬掩膜层刻蚀第一功函数金属层20，以形成凹槽60；Step 3: Etching the first work function metal layer 20 by using the patterned hard mask layer to form the groove 60;
第四步骤：沉积第二功函数金属层50以填充凹槽60，其中第二功函数金属层50与第一功函数金属层20为不同材料；The fourth step: depositing the second work function metal layer 50 to fill the groove 60, wherein the second work function metal layer 50 and the first work function metal layer 20 are made of different materials;
第五步骤：对第二功函数金属层50进行化学机械研磨以露出第一功函数金属层20；Fifth step: performing chemical mechanical polishing on the second work function metal layer 50 to expose the first work function metal layer 20;
第六步骤：刻蚀第一功函数金属层20和介质层10，从而形成在第一功函数金属凸块52侧壁包围第一功函数金属侧壁21的结构。Step 6: Etching the first work function metal layer 20 and the dielectric layer 10 to form a structure surrounding the first work function metal sidewall 21 on the sidewall of the first work function metal bump 52 .
优选地，第一功函数金属层20是金属氮化物、金属硅化物、单质金属或者金属合金中的一种。优选地，第一功函数金属层20的厚度为2nm～10nm。Preferably, the first work function metal layer 20 is one of metal nitride, metal silicide, simple metal or metal alloy. Preferably, the thickness of the first work function metal layer 20 is 2 nm˜10 nm.
优选地，第二功函数金属层50是金属氮化物、金属硅化物、单质金属或者金属合金中的一种。优选地，第二功函数金属层50的厚度为2nm～10nm。Preferably, the second work function metal layer 50 is one of metal nitride, metal silicide, single metal or metal alloy. Preferably, the thickness of the second work function metal layer 50 is 2 nm˜10 nm.
<第三优选实施例><Third Preferred Embodiment>
图13至图18示意性地示出了根据本发明第三优选实施例的三栅极结构的形成方法的各个步骤。FIG. 13 to FIG. 18 schematically show various steps of a method for forming a triple-gate structure according to a third preferred embodiment of the present invention.
如图13至图18所示，根据本发明第三优选实施例的三栅极结构的形成方法包括：As shown in FIG. 13 to FIG. 18 , the forming method of the tri-gate structure according to the third preferred embodiment of the present invention includes:
第一步骤：在衬底100上依次形成介质层10、第一功函数金属层20和硬掩膜层30；The first step: sequentially forming a dielectric layer 10, a first work function metal layer 20 and a hard mask layer 30 on a substrate 100;
第二步骤：形成硬掩膜层30的图案；The second step: forming a pattern of the hard mask layer 30;
第三步骤：采用形成图案的硬掩膜层刻蚀第一功函数金属层20，以形成第一功函数金属凸块40；Step 3: Etching the first work function metal layer 20 by using the patterned hard mask layer to form the first work function metal bump 40;
第四步骤：沉积第二功函数金属层50，其中第二功函数金属层50与第一功函数金属层20为不同材料；The fourth step: depositing the second work function metal layer 50, wherein the second work function metal layer 50 and the first work function metal layer 20 are made of different materials;
第五步骤：刻蚀第二功函数金属层50和介质层10，从而形成在第一功函数金属凸块40侧壁包围第二功函数金属侧壁51的结构；Step 5: Etching the second work function metal layer 50 and the dielectric layer 10, thereby forming a structure surrounding the second work function metal side wall 51 on the side wall of the first work function metal bump 40;
第六步骤：去除第一功函数金属凸块40上的硬掩膜。Step 6: removing the hard mask on the first work function metal bump 40 .
优选地，第一功函数金属层20是金属氮化物、金属硅化物、单质金属或者金属合金中的一种。优选地，第一功函数金属层20的厚度为2nm～10nm。Preferably, the first work function metal layer 20 is one of metal nitride, metal silicide, simple metal or metal alloy. Preferably, the thickness of the first work function metal layer 20 is 2 nm˜10 nm.
优选地，第二功函数金属层50是金属氮化物、金属硅化物、单质金属或者金属合金中的一种。优选地，第二功函数金属层50的厚度为2nm～10nm。Preferably, the second work function metal layer 50 is one of metal nitride, metal silicide, single metal or metal alloy. Preferably, the thickness of the second work function metal layer 50 is 2 nm˜10 nm.
本发明提供了一种更加方便的制造方法，能够在不增加光罩的基础上，通过一道硬掩膜，让栅极在沿着沟道的水平方向得到不同的功函数金属层。通过使栅极在沿着沟道的水平方向产生不同的功函数，能够得到不同的阈值电压，从而解决由于栅极尺寸减小而带来的一系列问题，如短沟道效应等。The invention provides a more convenient manufacturing method, which can allow the gate to obtain metal layers with different work functions along the horizontal direction of the channel through a hard mask without adding a photomask. By making the gate generate different work functions along the horizontal direction of the channel, different threshold voltages can be obtained, thereby solving a series of problems caused by the reduction of the gate size, such as the short channel effect.
此外，需要说明的是，除非特别说明或者指出，否则说明书中的术语“第一”、“第二”、“第三”等描述仅仅用于区分说明书中的各个组件、元素、步骤等，而不是用于表示各个组件、元素、步骤之间的逻辑关系或者顺序关系等。In addition, it should be noted that, unless otherwise specified or pointed out, the terms “first”, “second”, “third” and other descriptions in the specification are only used to distinguish each component, element, step, etc. in the specification, and It is not used to represent the logical relationship or sequential relationship between various components, elements, and steps.
可以理解的是，虽然本发明已以较佳实施例披露如上，然而上述实施例并非用以限定本发明。对于任何熟悉本领域的技术人员而言，在不脱离本发明技术方案范围情况下，都可利用上述揭示的技术内容对本发明技术方案作出许多可能的变动和修饰，或修改为等同变化的等效实施例。因此，凡是未脱离本发明技术方案的内容，依据本发明的技术实质对以上实施例所做的任何简单修改、等同变化及修饰，均仍属于本发明技术方案保护的范围内。It can be understood that although the present invention has been disclosed above with preferred embodiments, the above embodiments are not intended to limit the present invention. For any person skilled in the art, without departing from the scope of the technical solution of the present invention, the technical content disclosed above can be used to make many possible changes and modifications to the technical solution of the present invention, or be modified to be equivalent to equivalent changes. Example. Therefore, any simple modifications, equivalent changes and modifications made to the above embodiments according to the technical essence of the present invention, which do not deviate from the technical solution of the present invention, still fall within the protection scope of the technical solution of the present invention.
而且还应该理解的是，本发明并不限于此处描述的特定的方法、化合物、材料、制造技术、用法和应用，它们可以变化。还应该理解的是，此处描述的术语仅仅用来描述特定实施例，而不是用来限制本发明的范围。必须注意的是，此处的以及所附权利要求中使用的单数形式“一个”、“一种”以及“该”包括复数基准，除非上下文明确表示相反意思。因此，例如，对“一个元素”的引述意味着对一个或多个元素的引述，并且包括本领域技术人员已知的它的等价物。类似地，作为另一示例，对“一个步骤”或“一个装置”的引述意味着对一个或多个步骤或装置的引述，并且可能包括次级步骤以及次级装置。应该以最广义的含义来理解使用的所有连词。因此，词语“或”应该被理解为具有逻辑“或”的定义，而不是逻辑“异或”的定义，除非上下文明确表示相反意思。此处描述的结构将被理解为还引述该结构的功能等效物。可被解释为近似的语言应该被那样理解，除非上下文明确表示相反意思。Furthermore, it is to be understood that this invention is not limited to the particular methods, compounds, materials, fabrication techniques, usages and applications described herein, which may vary. It should also be understood that the terminology described herein is used to describe particular embodiments only and is not intended to limit the scope of the present invention. It must be noted that as used herein and in the appended claims, the singular forms "a", "an" and "the" include plural referents unless the context clearly dictates otherwise. Thus, for example, a reference to "an element" means a reference to one or more elements and includes equivalents thereof known to those skilled in the art. Similarly, as another example, a reference to "a step" or "a means" means a reference to one or more steps or means, and may include sub-steps as well as sub-means. All conjunctions used should be understood in their broadest sense. Therefore, the word "or" should be understood as having a logical "or" definition rather than a logical "exclusive or", unless the context clearly indicates the contrary meaning. Structures described herein are to be understood as also referring to functional equivalents of the structures. Language that may be construed as approximation should be construed as such, unless the context clearly dictates otherwise.
而且，本发明实施例的方法和/或系统的实现可包括手动、自动或组合地执行所选任务。而且，根据本发明的方法和/或系统的实施例的实际器械和设备，可利用操作系统通过硬件、软件或其组合实现几个所选任务。Moreover, implementation of the method and/or system of embodiments of the present invention may include performing selected tasks manually, automatically, or in combination. Moreover, according to actual instruments and equipment of embodiments of the method and/or system of the present invention, several selected tasks may be implemented by hardware, software, or a combination thereof using an operating system.
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