CN106442072A - Method for preparing transmission electron microscope samples - Google Patents
Method for preparing transmission electron microscope samples Download PDFInfo
- Publication number
- CN106442072A CN106442072A CN201611191297.XA CN201611191297A CN106442072A CN 106442072 A CN106442072 A CN 106442072A CN 201611191297 A CN201611191297 A CN 201611191297A CN 106442072 A CN106442072 A CN 106442072A
- Authority
- CN
- China
- Prior art keywords
- electron microscope
- sample
- preparation
- chip
- transmitted electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005540 biological transmission Effects 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title abstract description 6
- 238000002360 preparation method Methods 0.000 claims description 50
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 21
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical group CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- 238000003486 chemical etching Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 239000000499 gel Substances 0.000 claims description 4
- 239000003960 organic solvent Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 239000005357 flat glass Substances 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 abstract 5
- 238000004458 analytical method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004627 transmission electron microscopy Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
- G01N2001/2866—Grinding or homogeneising
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Sampling And Sample Adjustment (AREA)
Abstract
The invention provides a method for preparing transmission electron microscope samples. The method includes adhering a metal ring on the front surface of a chip; peeling off portions from the back surface of the chip to required-to-be-observed structural layers; removing portions, positioned on the outer periphery of the metal ring, of the chip and reserving the metal ring and portions, positioned in the metal ring, of the chip so as to obtain the ultimate transmission electron microscope samples. The method has the advantages that thin areas are formed inside the integral metal ring at the moment, the areas of the samples further can reach the mm<2> levels, accordingly, effects of observing the samples by the aid of transmission electron microscopes on large areas can be realized, the samples can be observed by the aid of the transmission electron microscopes on the large areas, and failure structures can be searched.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly to a kind of preparation method of sample for use in transmitted electron microscope.
Background technology
Transmission electron microscope (Transmission Electron Microscopy, abridge TEM, abbreviation transmission electron microscope)
Due to having the resolution of superelevation and extremely strong analytic function, have become as in advanced technologies semicon industry and carry out material structure
Analysis, the very important instrument of semiconductor failure analysis and means.Wherein, attach most importance to most during transmission electron microscope is analyzed
The preparation no more than sample for use in transmitted electron microscope wanted.
It is necessary first to chip failure address is prepared into thickness about 0.1um, area is about during semiconductor failure analysis
30um2～200um2Sample, more whether have the exception in structure by transmission electron microscope observing samples.Existing transmission electron microscope observation
The areal extent of sample preparation, is often directed to the physical address structure (um of certain or certain tens devices2Rank), but such as
Fruit needs to carry out coverage count (mm using transmission electron microscope2Rank) to find failure structure, not yet there is feasible method at present
To prepare such sample.
It is thus desirable to a kind of preparation method of novel sample for use in transmitted electron microscope of invention, it is used for preparing large-area planar transmission electricity
Mirror sample, increases many times of observation areas, meets the demand of CROSS REFERENCE, fill up FAILURE ANALYSIS TECHNOLOGY blank, improve work efficiency.
Content of the invention
It is an object of the invention to provide a kind of preparation method of sample for use in transmitted electron microscope, solve to prepare now big face
The problem of long-pending plane transmission electron microscopic sample.
For solving above-mentioned technical problem, the present invention provides a kind of preparation method of sample for use in transmitted electron microscope, and chip is prepared into
For the sample of transmission electron microscope, comprise the steps：
Paste a becket in the front of chip；
Peel off the structure sheaf at the back side of described chip to required observation；
Excise the chip of described becket periphery, retain described becket together with the chip in described becket, formed thoroughly
Penetrate electron microscopic sample.
Optionally, in the preparation method of described sample for use in transmitted electron microscope, before a becket is pasted in the front of chip, institute
The preparation method stating sample for use in transmitted electron microscope also includes：The front of described chip is ground, until the knot of described required observation
Structure layer.
Optionally, in the preparation method of described sample for use in transmitted electron microscope, the back side peeling off described chip is to required observation
Structure sheaf includes：
The front of described chip is pasted onto the top of a carrier, is stained with supporter in the bottom of described carrier；
Remove the silicon substrate of described chip back；
Successively peel off the structure sheaf at the back side of described chip to required observation.
Optionally, in the preparation method of described sample for use in transmitted electron microscope, the silicon substrate removing described chip back includes：
The silicon substrate of described chip back is ground, removes the silicon substrate of segment thickness；
The remaining silicon substrate of described chip back is removed by chemical etching.
Optionally, in the preparation method of described sample for use in transmitted electron microscope, before the chip excising described becket periphery, institute
The preparation method stating sample for use in transmitted electron microscope also includes：Chip after peeling off is put into organic solvent soaking clean.
Optionally, in the preparation method of described sample for use in transmitted electron microscope, the structure sheaf of described required observation is described chip
The structure sheaf that middle fail address circuit unit is located.
Optionally, in the preparation method of described sample for use in transmitted electron microscope, pasted in the front of described chip by thermal gels
Described becket.
Optionally, in the preparation method of described sample for use in transmitted electron microscope, described becket surrounds the inefficacy on described chip
Address circuit unit.
Optionally, in the preparation method of described sample for use in transmitted electron microscope, the material of described becket is copper or molybdenum.
Optionally, in the preparation method of described sample for use in transmitted electron microscope, described becket is elliptical ring.
Optionally, in the preparation method of described sample for use in transmitted electron microscope, the length of described elliptical ring major axis is 3mm to the maximum.
Optionally, in the preparation method of described sample for use in transmitted electron microscope, by PUR, the front of described chip is pasted
Top in described carrier.
Optionally, in the preparation method of described sample for use in transmitted electron microscope, described carrier is sheet glass.
Optionally, in the preparation method of described sample for use in transmitted electron microscope, above support is iron block.
Optionally, in the preparation method of described sample for use in transmitted electron microscope, chemical etching removal is carried out by ball phosphoric acid described
The remaining silicon substrate of chip back.
Optionally, in the preparation method of described sample for use in transmitted electron microscope, at a temperature of 60 DEG C～100 DEG C, carry out describedization
Learn etching.
Optionally, in the preparation method of described sample for use in transmitted electron microscope, described organic solvent is acetone.
In the preparation method of the sample for use in transmitted electron microscope that the present invention provides, paste a becket in the front of chip first；
Then peel off the structure sheaf at the back side of described chip to required observation；Finally excise the chip of described becket periphery, remain
Described becket, together with the chip in described becket, forms final sample for use in transmitted electron microscope, you can put into described sample
Radio mirror carries out observation analysis.Now the inside of whole becket is thin area, and further, the area of described sample reaches
mm2Rank, that is, achieve the effect of large-area transmission electron microscopy observation.
Brief description
Fig. 1 is the schematic flow sheet of the preparation method of sample for use in transmitted electron microscope provided in an embodiment of the present invention；
Fig. 2～Fig. 8 is that the device architecture formed in the preparation method of the sample for use in transmitted electron microscope of the embodiment of the present invention is illustrated
Figure.
Specific embodiment
Below in conjunction with the drawings and specific embodiments, the preparation method of sample for use in transmitted electron microscope proposed by the present invention is made further
Describe in detail.According to following explanation and claims, advantages and features of the invention will become apparent from.It should be noted that, accompanying drawing
All in the form of very simplification and all using non-accurately ratio, only in order to convenient, lucidly aid illustration present invention enforcement
The purpose of example.
The invention provides a kind of preparation method of sample for use in transmitted electron microscope, it is used for preparing large-area transmission electron microscopic sample, with
It is supplied to transmission electron microscope and carry out coverage count (mm2Rank) find failure structure, specific schematic flow sheet is as shown in Figure 1.
The preparation method of described sample for use in transmitted electron microscope comprises the steps：
Step S11, pastes a becket in the front of chip；
Step S12, peels off the structure sheaf at the back side of described chip to required observation；
Step S13, the chip of excision described becket periphery, retain described becket together with the core in described becket
Piece, forms sample for use in transmitted electron microscope.
Specifically, as shown in Fig. 2 being the schematic diagram of chip 1.Circuit unit (figure in fail address is comprised on described chip 1
Shown in middle lattice), structure sheaf in described chip 1 for the described fail address circuit unit, i.e. the structure sheaf of required observation.First
First the front of described chip 1 is ground, until the required observation structure layer that described fail address circuit unit is located, so that
Clearer can observe described fail address circuit unit, it is analyzed.
Referring next to Fig. 3, paste a becket 2 in the front of described chip 1, and described becket 2 encloses institute
State the described fail address circuit unit in chip 1, lost efficacy ground to guarantee to contain in the sample for use in transmitted electron microscope finally preparing
Location circuit unit.Specifically, it is to paste described becket 2 by thermal gels in the front of described chip 1, because thermal gels are dry
Extremely strong stability can be kept under dry state.Further, the material of described becket can be copper or molybdenum, described becket
It is elliptical ring, the length of its major axis is 3mm to the maximum.
As shown in figure 4, because PUR labeling rates are fast, efficiency high, therefore by described chip 1 just passing through PUR 3
Face is pasted onto the top of carrier 4, and is stained with supporter 5 in the bottom of described carrier 4, can easily described chip 1 be carried on the back
The silicon substrate 10 in face is ground.Further, described carrier 4 is preferably sheet glass, so that when grinding described silicon substrate 10
Real-time monitored can be carried out, it is to avoid overgrinding.Above support 5 is preferably iron block.
Then remove the described silicon substrate 10 at described chip 1 back side.Further, the silicon first to described chip 1 back side
Substrate 10 is ground, to remove most of silicon substrate at described chip 1 back side, specifically, by the silicon lining at described chip 1 back side
Bottom 10 wear down to tens micron thickness, specifically as shown in Figure 5.
Then the remaining silicon substrate in described chip 1 back side is removed by chemical etching.Preferably, it is to institute by ball phosphoric acid
State the remaining silicon substrate in chip 1 back side and carry out chemical etching, further, whole chemically etching process is at 60 DEG C～100 DEG C
At a temperature of carry out, so as to remaining for described chip 1 back side silicon substrate is removed according to certain speed, remove excess silicon
Chip schematic diagram after substrate specifically refers to Fig. 6.
Subsequently, the back side of described chip 1 is successively peeled off in a conventional manner, to different types of material layers be
It is removed using corresponding conventional method, until the structure sheaf that described fail address circuit unit is located, be stripping as shown in Figure 7
From after chip structure schematic diagram.
Finally the chip after peeling off is put into and carry out in acetone soaking until the impurity on described chip is removed, cut manually
Except the chip of described becket periphery, retain described becket together with the chip in described becket, required for ultimately forming
Sample for use in transmitted electron microscope, and contain the fail address circuit unit of required observation in described sample.Further, now
The inside entirely being surrounded by described becket 2 is thin area, and area has reached mm2Rank, that is, achieve large-area transmission Electronic Speculum and see
The effect surveyed, specifically as shown in Figure 8.
Foregoing description is only the description to present pre-ferred embodiments, not any restriction to the scope of the invention, this
Any change that the those of ordinary skill in bright field does according to the disclosure above content, modification, belong to the protection of claims
Scope.
Claims (17)
1. a kind of preparation method of sample for use in transmitted electron microscope is it is characterised in that comprise the steps：
Paste a becket in the front of chip；
Peel off the structure sheaf at the back side of described chip to required observation；
Excise the chip of described becket periphery, retain described becket together with the chip in described becket, form transmission electricity
Mirror sample.
2. the preparation method of sample for use in transmitted electron microscope as claimed in claim 1 is it is characterised in that paste a gold medal in the front of chip
Before belonging to ring, the preparation method of described sample for use in transmitted electron microscope also includes：The front of described chip is ground, until described institute
The structure sheaf that need to observe.
3. the preparation method of sample for use in transmitted electron microscope as claimed in claim 1 is it is characterised in that peel off the back side of described chip extremely
The structure sheaf of required observation includes：
The front of described chip is pasted onto the top of a carrier, is stained with supporter in the bottom of described carrier；
Remove the silicon substrate of described chip back；
Successively peel off the structure sheaf at the back side of described chip to required observation.
4. the preparation method of sample for use in transmitted electron microscope as claimed in claim 3 is it is characterised in that remove the silicon of described chip back
Substrate includes：
The silicon substrate of described chip back is ground, removes the silicon substrate of segment thickness；
The remaining silicon substrate of described chip back is removed by chemical etching.
5. the preparation method of sample for use in transmitted electron microscope as claimed in claim 1 is it is characterised in that excising described becket periphery
Chip before, the preparation method of described sample for use in transmitted electron microscope also includes：Chip after peeling off is put into organic solvent soaking clean.
6. the preparation method of sample for use in transmitted electron microscope as claimed in claim 1 is it is characterised in that the structure sheaf of described required observation
It is the structure sheaf that in described chip, fail address circuit unit is located.
7. the preparation method of sample for use in transmitted electron microscope as claimed in claim 1 is it is characterised in that pass through thermal gels in described chip
Front paste described becket.
8. the preparation method of sample for use in transmitted electron microscope as claimed in claim 7 is it is characterised in that described becket surrounds described core
Fail address circuit unit on piece.
9. the preparation method of sample for use in transmitted electron microscope as claimed in claim 8 is it is characterised in that the material of described becket is copper
Or molybdenum.
10. the preparation method of sample for use in transmitted electron microscope as claimed in claim 9 is it is characterised in that described becket is elliptical ring.
The preparation method of 11. such as claim 10 sample for use in transmitted electron microscope stated is it is characterised in that the length of described elliptical ring major axis
It is 3mm to the maximum.
The preparation method of 12. sample for use in transmitted electron microscope as claimed in claim 3 is it is characterised in that by PUR by described core
The front of piece is pasted onto the top of described carrier.
The preparation method of 13. sample for use in transmitted electron microscope as claimed in claim 3 is it is characterised in that described carrier is sheet glass.
The preparation method of 14. sample for use in transmitted electron microscope as claimed in claim 3 is it is characterised in that above support is iron block.
The preparation method of 15. sample for use in transmitted electron microscope as claimed in claim 4 is it is characterised in that carry out chemistry by ball phosphoric acid
Etching removes the remaining silicon substrate of described chip back.
The preparation method of 16. sample for use in transmitted electron microscope as claimed in claim 15 is it is characterised in that in 60 DEG C～100 DEG C of temperature
Carry out described chemical etching under degree.
The preparation method of 17. sample for use in transmitted electron microscope as claimed in claim 5 is it is characterised in that described organic solvent is acetone.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611191297.XA CN106442072A (en) | 2016-12-21 | 2016-12-21 | Method for preparing transmission electron microscope samples |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611191297.XA CN106442072A (en) | 2016-12-21 | 2016-12-21 | Method for preparing transmission electron microscope samples |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106442072A true CN106442072A (en) | 2017-02-22 |
Family
ID=58215841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611191297.XA Pending CN106442072A (en) | 2016-12-21 | 2016-12-21 | Method for preparing transmission electron microscope samples |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106442072A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111398325A (en) * | 2019-01-03 | 2020-07-10 | 无锡华润上华科技有限公司 | TEM sample preparation method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7208965B2 (en) * | 2004-12-23 | 2007-04-24 | Systems On Silicon Manufacturing Co. Pte. Ltd. | Planar view TEM sample preparation from circuit layer structures |
| CN102185022A (en) * | 2011-03-31 | 2011-09-14 | 南京沙宁申光伏有限公司 | Method for manufacturing solar cell |
| CN102023111B (en) * | 2010-11-02 | 2012-05-16 | 大连理工大学 | Method for preparing transmission electron microscope sample of soft brittle phototransistor |
| CN102455259A (en) * | 2010-10-18 | 2012-05-16 | 武汉新芯集成电路制造有限公司 | Plane TEM sample preparation method |
| CN103913358A (en) * | 2014-04-10 | 2014-07-09 | 武汉新芯集成电路制造有限公司 | Preparation method and failure analysis method for transmission electron microscope (TEM) sample |
| CN106018018A (en) * | 2016-05-13 | 2016-10-12 | 苏州博飞克分析技术服务有限公司 | Novel TEM sample preparation method for analyzing lattice imperfection in failure analysis |
-
2016
- 2016-12-21 CN CN201611191297.XA patent/CN106442072A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7208965B2 (en) * | 2004-12-23 | 2007-04-24 | Systems On Silicon Manufacturing Co. Pte. Ltd. | Planar view TEM sample preparation from circuit layer structures |
| CN102455259A (en) * | 2010-10-18 | 2012-05-16 | 武汉新芯集成电路制造有限公司 | Plane TEM sample preparation method |
| CN102023111B (en) * | 2010-11-02 | 2012-05-16 | 大连理工大学 | Method for preparing transmission electron microscope sample of soft brittle phototransistor |
| CN102185022A (en) * | 2011-03-31 | 2011-09-14 | 南京沙宁申光伏有限公司 | Method for manufacturing solar cell |
| CN103913358A (en) * | 2014-04-10 | 2014-07-09 | 武汉新芯集成电路制造有限公司 | Preparation method and failure analysis method for transmission electron microscope (TEM) sample |
| CN106018018A (en) * | 2016-05-13 | 2016-10-12 | 苏州博飞克分析技术服务有限公司 | Novel TEM sample preparation method for analyzing lattice imperfection in failure analysis |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111398325A (en) * | 2019-01-03 | 2020-07-10 | 无锡华润上华科技有限公司 | TEM sample preparation method |
| CN111398325B (en) * | 2019-01-03 | 2022-05-06 | 无锡华润上华科技有限公司 | TEM sample preparation method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105280473B (en) | Method for reducing residual pollutant in single-grain semiconductor chip core | |
| US20120115308A1 (en) | Fabrication method for dicing of semiconductor wafers using laser cutting techniques | |
| PH12013000169A1 (en) | Semiconductor die singulation method | |
| WO2020140785A1 (en) | Tem sample preparation method | |
| JP2012073069A (en) | Preparation method of specimen for observing defective part of semiconductor device substrate | |
| CN109406555A (en) | A kind of sample removes hierarchical method | |
| DE102017103095A1 (en) | Handling a thin wafer during chip production | |
| CN113649709A (en) | Wafer cutting method | |
| US7655539B2 (en) | Dice by grind for back surface metallized dies | |
| CN105806679A (en) | Preparation method for TEM sample | |
| CN101719471A (en) | Method for manufacturing field effect transistor | |
| US8420505B2 (en) | Process for manufacture of thin wafer | |
| CN106442072A (en) | Method for preparing transmission electron microscope samples | |
| US11694937B2 (en) | Semiconductor wafer and method of probe testing | |
| JP5016321B2 (en) | Support plate processing method | |
| US11823965B2 (en) | Substrate processing carrier | |
| CN103094094B (en) | Prepared method of ultrathin semiconductor chip | |
| US6826971B2 (en) | Fabrication method for sample to be analyzed | |
| CN119125610A (en) | A method for preparing a bulk material in-situ atmosphere transmission chip sample using FIB | |
| US7394075B1 (en) | Preparation of integrated circuit device samples for observation and analysis | |
| CN115502386A (en) | A gold nanoparticle two-dimensional material surface Raman enhanced substrate and its preparation method and application | |
| JP5738815B2 (en) | Semiconductor device manufacturing method and semiconductor manufacturing apparatus | |
| CN114252465B (en) | Preparation method of etched pit semiconductor sample for microscope | |
| CN102466577A (en) | Preparation method of physical detection sample | |
| US20130115757A1 (en) | Method for separating a plurality of dies and a processing device for separating a plurality of dies |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170222 |
|
| RJ01 | Rejection of invention patent application after publication |