CN106575853A - Semiconductor laser device - Google Patents
Semiconductor laser device Download PDFInfo
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- CN106575853A CN106575853A CN201580040673.2A CN201580040673A CN106575853A CN 106575853 A CN106575853 A CN 106575853A CN 201580040673 A CN201580040673 A CN 201580040673A CN 106575853 A CN106575853 A CN 106575853A
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- 239000004065 semiconductor Substances 0.000 title abstract description 25
- 238000006880 cross-coupling reaction Methods 0.000 claims abstract description 83
- 239000006185 dispersion Substances 0.000 claims abstract description 16
- 230000010355 oscillation Effects 0.000 claims abstract description 13
- 230000003287 optical effect Effects 0.000 claims description 99
- 230000008878 coupling Effects 0.000 claims description 17
- 238000010168 coupling process Methods 0.000 claims description 17
- 238000005859 coupling reaction Methods 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000010276 construction Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 230000005764 inhibitory process Effects 0.000 description 8
- 230000003321 amplification Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 3
- 230000004075 alteration Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 208000007578 phototoxic dermatitis Diseases 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02253—Out-coupling of light using lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
- H01S5/143—Littman-Metcalf configuration, e.g. laser - grating - mirror
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
A semiconductor laser device in which an anamorphic prism pair is arranged between a wavelength dispersion element and a partial reflection mirror, and enlarges an angle formed by the normal oscillation light axis of a normal oscillation beam emitted from a light-emitting point and a cross-coupling light axis of a cross-coupling oscillation beam that oscillates by way of another light-emitting point. Thus, the oscillation loss of the cross-coupling oscillation beam can be increased and the light-focusing ability can be improved without increasing the size of the device.
Description
Technical field
The present invention relates to multiple wavelength that a kind of wavelength dispersion of utilization waveguide dispersive elements will be produced from multiple luminous points
The light beam semicondcutor laser unit that is overlapped and exports.
Background technology
Currently, it is known that the semicondcutor laser unit (for example, referring to patent document 1 and patent document 2) of following structures, i.e.
In order to the cross-couplings vibration light beam output caused by the outside laser resonator light path produced to each other in different luminous points
Suppressed, between the waveguide dispersive elements and partially reflecting mirror of outside laser resonator spatial filter is configured with
(spatial filter)。
Patent document 1：No. 06192062 specification of U.S. Patent No.
Patent document 2：No. 07065107 specification of U.S. Patent No.
The content of the invention
But, the slit interference that the semicondcutor laser unit Existential Space wave filter is used is to vibration light beam, laser instrument
Output reduces such problem.
In addition, also there are following problems, i.e. in order to prevent vibration light beam from being interfered by slit, in addition, in order to device is little
Type, the focal length for needing the lens for being used spatial filter shortens, and causes laser instrument output to reduce, gather by the aberration of lens
Photosensitiveness is reduced.
Also, also there are following problems, i.e. because slit is configured at the focal position of lens, therefore in adjustment slit
When be susceptible to slit scaling loss etc., slit adjustment is extremely difficult, also, needs cooling at slit as slit scaling loss countermeasure
Construction, therefore cost uprises.
The present invention will solve problem described above as problem, it is intended that a kind of semicondcutor laser unit is obtained, should
Semicondcutor laser unit is lost without the need for the vibration that larger-scale unit can be increased cross-couplings vibration light beam, it is possible to increase optically focused
Property.
Semicondcutor laser unit involved in the present invention has：Outside laser resonator, its include waveguide dispersive elements and
Partially reflecting mirror, the waveguide dispersive elements make the beam combination from multiple luminous points, and the partially reflecting mirror is illuminated through institute
The light beam after waveguide dispersive elements is stated, a part for the light beam is exported to outside, remaining light beam is reflected,
The outside laser resonator is by the light beam of the multiple wavelength produced from the plurality of luminous point using wavelength dispersion unit
The wavelength dispersion of part and be overlapped, the regular vibration light beam formed by each self-oscillation of the plurality of luminous point is exported to outer
Portion；And angle enlarged elements, it is configured between the waveguide dispersive elements and the partially reflecting mirror, regular is shaken described
The i.e. regular vibration optical axis of optical axis for swinging light beam vibrates from the cross-couplings that formation is vibrated via different the plurality of luminous points
The optical axis of light beam is that cross-couplings optical axis angulation expands.
The effect of invention
According to semicondcutor laser unit involved in the present invention, it is configured between waveguide dispersive elements and partially reflecting mirror
Angle enlarged elements, the angle enlarged elements to the regular vibration optical axis of regular vibration light beam that projects from luminous point and via
Different luminous point and the cross-couplings optical axis angulation that vibrates the cross-couplings vibration light beam of formation is enlarged, therefore
Vibration loss without the need for larger-scale unit can be increased cross-couplings vibration light beam, it is possible to increase light-gathering.
Description of the drawings
Fig. 1 is the summary construction diagram for representing the semicondcutor laser unit involved by embodiments of the present invention 1.
Fig. 2 is the figure of the wave spectrum of the regular vibration light beam of the semicondcutor laser unit for representing Fig. 1.
Fig. 3 is for illustrating that the cross-couplings at semicondcutor laser unit vibrate the summary construction diagram of light beam.
Fig. 4 is the figure of the wave spectrum for representing cross-couplings vibration light beam.
Fig. 5 is for illustrating that the cross-couplings of semicondcutor laser unit vibrate the summary construction diagram of the suppressing method of light beam.
Fig. 6 is the schematic configuration of the inhibition for illustrating the cross-couplings vibration light beam at the semicondcutor laser unit of Fig. 1
Figure.
Fig. 7 is the summary construction diagram for representing the semicondcutor laser unit involved by embodiments of the present invention 2.
Fig. 8 is the summary construction diagram for representing the semicondcutor laser unit involved by embodiments of the present invention 3.
Specific embodiment
Below, based on accompanying drawing, various embodiments of the present invention will be described, in the various figures to identical or equivalent elements,
Position marks identical label and illustrates.
Embodiment 1.
Fig. 1 is the summary construction diagram for representing the semicondcutor laser unit 40 involved by embodiments of the present invention 1.
The structure of the semicondcutor laser unit 40 is, will be from the 1st using the wavelength dispersion effect of waveguide dispersive elements 5
The semiconductor laser 1a and respective 1st luminous point 2a of the 2nd semiconductor laser 1b, the optical superposition of the 2nd luminous point 2b are one
Light beam.
For semicondcutor laser unit 40, the phase of side is projected by the light of luminous point 2a, 2b of semiconductor laser 1a, 1b
The optical system that each optical element between the face tossed about and partially reflecting mirror 7 is constituted becomes laser resonator, further with regards to half
Conductor laser 1a, 1b, usual luminous point 2a, 2b itself becomes laser resonator, but in the following description, will be in luminous point
Above-mentioned laser resonator arrange outside 2a, 2b, with partially reflecting mirror 7 etc. as structural element is referred to as outside laser resonator.
In FIG, in order to simple, the 1st semiconductor laser 1a and the 2nd semiconductor laser 1b shows two, relatively
Luminous point 2a, a 2b (so-called single-shot emitter semiconductor laser) are respectively illustrated in each semiconductor laser 1a, 1b.
Additionally, the quantity of luminous point can also be more than the quantity of semiconductor laser, in addition in a semiconductor laser
On there are multiple luminous points in the case of (so-called diode laser bar), also can similarly using waveguide dispersive elements 5 in the future
It is a light beam from the optical superposition of multiple luminous points.
Although light beam is actually come and gone in outside laser resonator, first to from the 1st luminous point 2a, the 2nd
Luminous point 2b is illustrated towards the propagation of the light beam in the direction of partially reflecting mirror 7.
The light beam produced from luminous point 2a, 2b of semiconductor laser 1a, 1b is dissipated while projecting.In order to outside
The Mode Coupling of resonator, the light beam produced from semiconductor laser 1a, 1b is made by light beam parallelization optical system 3a, 3b
Almost parallelization.
Light beam parallelization optical system 3a, 3b can using cylindrical lens, spherical lens, non-spherical lens, with curvature
Speculum or combinations thereof.
Generally, the angle of divergence of the light for producing from semiconductor laser 1a, 1b has anisotropy, and the angle of divergence is being hung down with paper
Direction in straight direction and paper is different.It is preferably that polylith is saturating accordingly, as light beam parallelization optical system 3a, 3b
Mirror or curvature arrangement of mirrors and used.
In addition, now, light beam parallelization optical system 3a, 3b can also include Beam rotation optical system.
As Beam rotation optical system, using in known document (reference Japanese Unexamined Patent Publication 2000-137139 publications, figure
2) cylindrical lens array that illustrates in, the speculum illustrated in known document (WO98/08128 publications) etc..
Through above-mentioned Beam rotation optical system, so that from each luminous point 2a, 2b injection with anisotropic
Light beam rotates about 90 degree in the face vertical with optical axis.
By the light beam after light beam parallelization optical system 3a, 3b almost parallelization, by coupling optical system 4 in wavelength
Overlap spatially is obtained on dispersion element 5.
For focal length is the coupling optical system 4 of f, illustrated with 1 piece of lens in FIG, but cylindrical lens, ball can be used
Face lens, non-spherical lens, the speculum with curvature or combinations thereof.
Waveguide dispersive elements 5 can using reflection-type diffraction grating, infiltration type diffraction grating, prism, by diffraction grating and
The element (rib grid) of prism arrangement.Due to wavelength dispersion it is bigger, i.e. the diffraction when the light beam of two different wave lengths has been injected
The difference at angle or refraction angle is bigger, then more can in space-saving way by from the beam combination of multiple semiconductor laser 1a, 1b, because
This preferably uses diffraction grating compared with prism.
When the different light from the 1st luminous point 2a, the 2nd luminous point 2b is certain specific different wave length, using wavelength
The wavelength dispersion of dispersion element 5, i.e. the characteristic that the angle of diffraction or refraction angle change according to wavelength, will inject from luminous point
The beam combination of 2a, 2b is a light beam.
It is superposed to the light beam after a light beam after the anamorphic prism as angle enlarged elements is to 6, towards part instead
Penetrate mirror 7 to project.
Now, anamorphic prism is configured to following direction to 6, i.e. advance to partially reflecting mirror 7 from waveguide dispersive elements 5
Light beam after anamorphic prism is to 6, only the regular vibration output beam size 21 of the axle parallel with paper is reduced.
Anamorphic prism is made up of to 62 prisms, can only make the beam sizes change in 1 direction, and being in order at mostly will be ellipse
Circle beam shaping is the purpose of circular light beam and uses.
The part for exposing to the light beam of partially reflecting mirror 7 is passed through and taken out as regular vibration output beam 10, is remained
A remaining part is reflected.
The light beam of reflection with the light beam identical road from the 1st luminous point 2a, the 2nd luminous point 2b towards partially reflecting mirror 7
Footpath is propagated in reverse direction, be incident upon the 1st semiconductor laser 1a the 1st luminous point 2a, the 2nd of the 2nd semiconductor laser 1b
Luminous point 2b, is suitably back to the 1st luminous point 2a of the 1st semiconductor laser 1a, the 2nd of the 2nd semiconductor laser 1b and lights
The respective back end surfaces of point 2b, so as to realize the function as outside laser resonator.
In order to form outside laser resonator, to partially reflecting mirror 7, waveguide dispersive elements 5, coupling optical system 4, light beam
The position of parallelization optical system 3a, 3b, angle are adjusted.
It is one between partially reflecting mirror 7 and waveguide dispersive elements 5 in the state of the outside laser resonator is defined
Bar optical axis, is that waveguide dispersive elements 5 light with the 1st between the luminous point 2a of waveguide dispersive elements 5 and the 1st, the 2nd luminous point 2b
Optical axis that point 2a links and optical axis this two articles of different optical axises for linking waveguide dispersive elements 5 from the 2nd luminous point 2b.For
Form these optical axises and automatically determine the laser oscillation wavelength produced by the 1st luminous point 2a and the 2nd luminous point 2b.
That is, in semicondcutor laser unit 40, in order to when the function of outside laser resonator is realized, in FIG,
With optical axis it is regular vibration optical axis 20 forming outside laser resonator between partially reflecting mirror 7 and waveguide dispersive elements 5,
And the oscillation wavelength of the 1st luminous point 2a and the 2nd luminous point 2b is automatically determined, its wavelength becomes each different wavelength.
Below, the vibration light beam is referred to as into regular vibration light beam.
Fig. 2 represents wave spectrum during regular vibration light beam.
In the regular vibration light beam, from two articles of beam combinations of the 1st luminous point 2a and the 2nd luminous point 2b, as one
The regular vibration output beam 10 of bar is projected from partially reflecting mirror 7, and it is of about 2 times that can become brightness.If making semiconductor laser
The quantity of device and luminous point increases, then can improve further brightness.
On the other hand, though in order to form the regular vibration optical axis 20 of Fig. 1 and to each optics in outside laser resonator
Element is adjusted, it is also possible to produce undesirable laser generation.
As below describe shown in, due to the undesirable laser generation light beam be via the 1st different luminous point 2a,
2nd luminous point 2b and vibrate formation, therefore below by the undesirable laser generation light beam be referred to as cross-couplings vibration
Light beam.
Next, using Fig. 3, illustrating to cross-couplings vibration light beam.
In figure 3, in order that the explanation of cross-couplings vibration light beam becomes simple, by minimal optical element structure
Into the anamorphic prism shown in Fig. 1 is configured without between waveguide dispersive elements 5 and partially reflecting mirror 7 to 6.
In figure 3, the optical axis of cross-couplings vibration light beam is that cross-couplings optical axis 30 is shown in broken lines, regular vibration optical axis
20 are shown in solid.
Regular vibration optical axis 20 is located at one on waveguide dispersive elements 5, is vertically incident upon partially reflecting mirror 7.
On the other hand, cross-couplings optical axis 30 is not collected at one on waveguide dispersive elements 5, in addition, relative to
Partially reflecting mirror 7 is nor vertically inject, but obliquely inject.
Cross-couplings optical axis 30 is also obliquely to inject injection at the 1st luminous point 2a, the 2nd luminous point 2b, but due to from
1st luminous point 2a, the 1st luminous point 2b can produce light beam with a certain degree of angular amplitude, therefore by the 1st luminous point
Light beam becomes the cross-couplings optical axis 30 that inclined cross-couplings vibrate light beam at 2a, the 2nd luminous point 2b, can also form outside sharp
Optical resonator.
Now, a part for the light beam for projecting from the 1st luminous point 2a carries out being incident upon after normal reflection the by partially reflecting mirror 7
2 luminous point 2b a, part for the light beam projected from the 2nd luminous point 2b is carried out being incident upon the 1st after normal reflection by partially reflecting mirror 7
Luminous point 2a.
As described above, the light path reciprocally injected, project between the 1st luminous point 2a and the 2nd luminous point 2b by light beam
And form outside laser resonator.
Now, regular vibration optical axis 20 is vertical on partially reflecting mirror 7, in addition, be 1 optical axis, on the other hand,
Cross-couplings optical axis 30 is inclined on partially reflecting mirror 7 as shown in Fig. 3.
Thus, outside the regular vibration output beam 10 produced from regular vibration optical axis 20, it is mixed with direct of travel not
Same cross-couplings vibration output beam 11a, 11b, therefore the light-gathering reduction of the light beam produced from outside laser resonator.
Here, when being described in detail to cross-couplings optical axis 30, following 2 conditions are set.
Condition 1 is, as shown in figure 4, the 1st when the oscillation wavelength produced by cross-couplings to be set to regular vibration light beam
The wavelength of the centre of the oscillation wavelength of luminous point 2a and the 2nd luminous point 2b.
Condition 2 is, as shown in figure 3, by from the cross-couplings optical axis 30 of the 1st luminous point 2a and the 2nd luminous point 2b injections
Shooting angle is set to symmetrical above and below relative to regular vibration optical axis 20.
Above-mentioned condition be in order that explanation be easy to understand and use, actually also will recognize that except above-mentioned condition with
Outer cross-couplings vibration light beam, but above-mentioned condition is the condition that be enough to understand that cross-couplings vibrate light beam.
According to above-mentioned condition 2, from the cross-couplings oscillation light that the 1st luminous point 2a shown in Fig. 3 and the 2nd luminous point 2b is projected
The shooting angle of the cross-couplings optical axis 30 of beam is respectively+θ 1 and-θ 1, after waveguide dispersive elements 5, according to above-mentioned condition
1, advanced with the angle of+θ g and-θ g respectively, intersect with regular vibration optical axis 20 on partially reflecting mirror 7.
A part for cross-couplings optical axis 30 for light beam is vibrated to the cross-couplings that partially reflecting mirror 7 is injected by normal reflection,
Wherein, the cross-couplings optical axis 30 for projecting from the 1st luminous point 2a is injected to the 2nd luminous point 2b, from the friendship that the 2nd luminous point 2b is projected
Fork coupling optical axis 30 is injected to the 1st luminous point 2a, so as to form cross-couplings vibration beam path.
Next, illustrating to the suppressing method that cross-couplings vibrate light beam.
L1 will be set to from waveguide dispersive elements 5 to the distance of partially reflecting mirror 7 in figure 3, but the distance is as shown in Figure 5
It is set to L2 (＞ L1).Now, the wavelength of cross-couplings vibration light beam will not change according to above-mentioned condition 1, therefore wavelength dispersion
Still+θ g are distinguished between element 5 and partially reflecting mirror 7, cross-couplings optical axis 30 and angle formed by regular vibration optical axis 20
And-θ g, it is identical with the angle of Fig. 3.
Thus, the cross-couplings optical axis 30 on waveguide dispersive elements 5 with it is regular vibration optical axis 20 side-play amount Fig. 3's
It is D1 in structure, is D2=(L2/L1) × D1 in the structure of Fig. 5 on the other hand, D2 is the value bigger than D1.
As a result, the cross-couplings projected from the 1st luminous point 2a, the 2nd luminous point 2b vibrate the cross-couplings optical axis of light beam
30 shooting angle, according to formed by regular vibration optical axis 20 from the point of view of angle, respectively+θ 2 and-θ 2.
Now, θ 2=(L2/L1) × θ 1, θ 2 ＞ θ 1.
It can be seen that, the cross-couplings projected from the 1st luminous point 2a, the 2nd luminous point 2b vibrate the cross-couplings light of light beam
Axle 30 becomes bigger with angle formed by regular vibration optical axis 20, and cross-couplings vibrate the resonance at luminous point 2a, 2b of light beam
More it is inhibited, the vibration loss of cross-couplings vibration light beam becomes bigger, therefore by increasing the cross-couplings optical axis 30 of Fig. 5
With the value of the regular vibration angulation θ 2 of optical axis 20 such that it is able to realize that cross-couplings vibrate the suppression of light beam.
It can be seen from above-mentioned explanation, in order to suppress cross-couplings to vibrate light beam, increase above-mentioned angle, θ 2, i.e. increase ripple
Cross-couplings optical axis 30 on long dispersion element 5 is effective with the side-play amount of regular vibration optical axis 20.
But, usual θ g are very little values, therefore can suppress cross-couplings vibration light beam in order to D2 is increased to
Degree, needs extremely increase L2, there are problems that causing as larger-scale unit.
On the other hand, for the semicondcutor laser unit 40 of present embodiment 1, without the need for larger-scale unit may refrain from
Cross-couplings vibrate light beam, and the inhibition that cross-couplings vibrate light beam is illustrated underneath with Fig. 6.
In figure 6, anamorphic prism has following effects to 6, i.e. in light beam towards the injection direction of light beam be luminous point
The beam sizes of the axle parallel with paper are changed into 1/A times by the direction of 2a, 2b when anamorphic prism is to 6.Here, A is 0
Natural number in addition, by anamorphic prism to 6 configuration, shape is adjusted such that it is able to freely select the size of A,
But market sale it is mostly be A=2～6 or so size product.
Now, the cross-couplings light for the angle of optical axis, between waveguide dispersive elements 5 and anamorphic prism are to 6
When axle 30 is respectively+θ g and-θ g with angle formed by regular vibration optical axis 20, anamorphic prism is between 6 and partially reflecting mirror 7
Cross-couplings optical axis 30 is respectively+A θ g and-A θ g with angle formed by regular vibration optical axis 20, and the angle in paper is changed into A times.
Now, because θ g are fully little, therefore the cross-couplings optical axis 30 on waveguide dispersive elements 5 and the regular skew for vibrating optical axis 20
Amount D4 becomes D4 ≈ AD3.
As described above, in order to suppress cross-couplings to vibrate light beam, it is effective to increase above-mentioned D4, but is understood in this embodiment party
As long as increasing D3 in the semicondcutor laser unit 40 of formula 1.In order to increase D3, increase L3.
Now, anamorphic prism to the cross-couplings optical axis 30 between 6 and partially reflecting mirror 7 and regular vibration optical axis 20 institute into
Angle be respectively+A θ g and-A θ g, cross-couplings optical axis 30 is changed into A times with angle formed by regular vibration optical axis 20, thus due to
The increase of the D3 for increasing L3 and producing also becomes A times.
Here, it is considered to following situations, i.e. using the semicondcutor laser unit 40 of the present embodiment 1 shown in Fig. 6, obtain
To the cross-couplings equal with by structure shown in L2, Fig. 5 is set to from waveguide dispersive elements 5 to the distance of partially reflecting mirror 7
The inhibition of vibration light beam.
In order to obtain the inhibition that the cross-couplings equal with Fig. 5 vibrate light beam, become D4=AD3=D2, because
This obtains the size of the L3 for setting up D3=D2/A.
The size of D3 and D2 is obtained using following formula (1), (2).
D3≈Aθg×L3…(1)
D2=θ g × L2 ... (2)
By formula (1), L3 is obtained.
L3=D3/A θ g ... (3)
Now, D3=D2/A, therefore formula (3) deformed in the following manner.
L3=D2/A θ g ... (4)
If formula (2) is substituted into into formula (4), become
L3=L2/A2 ... (5).
It follows that in order that D3=D2/A establishments, L3=L2/A2.
By described above, according to the semicondcutor laser unit 40 of present embodiment 1, in waveguide dispersive elements 5 and part
Between speculum 7, the anamorphic prism as angle enlarged elements is configured with to 6, the anamorphic prism will be from luminous point 2a, 2b to 6
The regular vibration optical axis 20 of the regular vibration light beam for projecting from vibrate formation via different luminous point 2a, 2b intersect coupling
The angulation of cross-couplings optical axis 30 of co oscillation light beam expands, therefore with following significant effects, i.e. can be by wavelength
The distance between dispersion element 5 and partially reflecting mirror 7 be kept as it is compact, in addition, without using produce by lens aberration, block
Thing interferes with spatial filter of output reduction that light beam causes etc., efficiently realizes that cross-couplings vibrate the suppression of light beam, gathers
Photosensitiveness is improved.
Embodiment 2.
Fig. 7 is the summary construction diagram of the semicondcutor laser unit 40 of embodiments of the present invention 2.
The semicondcutor laser unit 40 of present embodiment 2 be relative to embodiment 1 semicondcutor laser unit 40 by light
Door screen 8 is configured in device obtained from the vicinity of waveguide dispersive elements 5.The diaphragm 8 physically enters to cross-couplings vibration light beam
Row is blocked.
The aperture of diaphragm 8 is greater than the size of the regular vibration output beam size 21 of regular vibration optical axis 20, will
Diaphragm 8 is configured to will not interfere with regular vibration output beam 10.As the benchmark of the aperture of diaphragm 8, it is greater than or waits
In 1.1 times of comprising integral energy the 99% of regular vibration output beam 10 width.
Additionally, the aperture of diaphragm 8 is set to above-mentioned big amount, but with regard to the semicondcutor laser unit of present embodiment 2
For 40, in the same manner as the semicondcutor laser unit 40 with embodiment 1, cross-couplings optical axis 30 is increased with regular vibration
The side-play amount of optical axis 20, even if therefore using the diaphragm 8 of big width as above, it is also possible to effectively cross-couplings are vibrated
Light beam is blocked.
In addition, the allocation position of diaphragm 8 can not be the vicinity of waveguide dispersive elements 5, or coupling optical system 4
Vicinity, as long as it is critical that be configured in can effectively to cross-couplings vibrate light beam be suppressed, coupling optical system
Between 4 and waveguide dispersive elements 5.
Other structures are identical with the semicondcutor laser unit 40 of embodiment 2.
According to the semicondcutor laser unit 40 of present embodiment 2, by the way that diaphragm 8 to be configured the knot in outside laser resonator
Structure key element is between coupling optical system 4 and waveguide dispersive elements 5 such that it is able to do not allowed angle width by luminous point 2a, 2b
The impact of the individual differences such as degree, remains constant by the inhibition that cross-couplings vibrate light beam.
In addition, also can hide to the cross-couplings vibration light beam for allowing angular width less than luminous point 2a, 2b
Gear, therefore, it is possible to further shorten the length of partially reflecting mirror 7 and anamorphic prism to the distance between 6 L3, can realize more entering
The miniaturization of the device of one step.
Additionally, for the semicondcutor laser unit 40 of the respective embodiments described above, being expanded as angle to 6 using anamorphic prism
Element and be illustrated, but be not limited to certainly this, or other there is the part of identical function.
In addition, for the semicondcutor laser unit of embodiment 1,2, explanation is in luminous point 2a, 2b and wavelength dispersion
Between element 5, the coupling optical system 4 that the light beam of spontaneous luminous point 2a, 2b in the future is superimposed on waveguide dispersive elements 5 is configured with
Semicondcutor laser unit, even if be from luminous point 2a, 2b light beam be directly superimposed on waveguide dispersive elements 5 half
Conductor Laser device, the present invention also can be suitable for.
In addition, for diaphragm 8, in addition between coupling optical system 4 and waveguide dispersive elements 5, can also be configured in
Position of the position, the anamorphic prism of waveguide dispersive elements 5 of luminous point 2a, 2b sides of coupling optical system 4 to 6 sides.In addition, just
For diaphragm 8, it is also possible to be not only configured at a position, and be disposed on each position.
Embodiment 3.
Fig. 8 is the summary construction diagram of the semicondcutor laser unit 40 for representing embodiments of the present invention 3.
The semicondcutor laser unit 40 of present embodiment 3 compared with the semicondcutor laser unit 40 of embodiment 1, in ripple
Between long dispersion element 5 and partially reflecting mirror 7, the 1st anamorphic prism of configuration, to 6b, has added one to 6a and the 2nd anamorphic prism
Anamorphic prism pair.Additionally, in fig. 8, anamorphic prism is eliminated to the cross-couplings optical axis 30 in 6a, 6b.
In the case where the 2nd additional anamorphic prism is set to into B to the angle amplification degree of 6b, if by the 2nd anamorphic prism
L3 is set to the distance between 6b and partially reflecting mirror 7, then the cross-couplings optical axis 30 on waveguide dispersive elements 5 shakes with regular
Side-play amount D4 for swinging optical axis 20 is D4 ≈ A × B × D3.
In order to suppress cross-couplings to vibrate light beam, it is effective to increase above-mentioned D4, therefore in the semiconductor of present embodiment 3
In laser aid 40, the inhibition that further cross-couplings vibrate light beam is played.
If shortening the distance between the 1st semiconductor laser 1a and the 2nd semiconductor laser 1b, through wavelength dispersion
The travel angle θ g of the cross-couplings optical axis 30 after element 5 diminishes, it is difficult to suppress cross-couplings to vibrate light beam.
Now, in order to suppress cross-couplings to vibrate light beam, angle amplification degree of the anamorphic prism to 6 is effectively increased.For
Angle amplification degree of the increase anamorphic prism to 6, increases the α 2 shown in Fig. 8.But, if increase α 2, is drawn by reflection
The loss for rising becomes big, and oscillation efficiency is reduced.
On the other hand, if using the semicondcutor laser unit 40 of present embodiment 3, even if not increasing each anamorphic prism
Angle amplification degree to 6a, 6b, it is also possible to improve cross-couplings inhibition, therefore, it is possible to vibration loss is reduced.
According to the semicondcutor laser unit 40 of present embodiment 3, by configuring multiple anamorphic prisms to 6a, 6b, without the need for increasing
Big vibration loss can improve cross-couplings vibration light beam inhibition.
Additionally, for the semicondcutor laser unit 40 of present embodiment 3, to being configured with 2 anamorphic prisms to 6a, 6b
Situation is illustrated, but is not limited to 2 certainly, it is also possible to be greater than or equal to 3.
The explanation of label
The semiconductor lasers of 1a the 1st, the semiconductor lasers of 1b the 2nd, the luminous points of 2a the 1st, the luminous points of 2b the 2nd, 3 light beams are parallel
Change optical system, 4 coupling optical systems, 5 waveguide dispersive elements, 6 anamorphic prisms deform rib to (angle enlarged elements), 6a the 1st
, to (angle enlarged elements), the anamorphic prisms of 6b the 2nd are to (angle enlarged elements), 7 partially reflecting mirrors, 10 regular vibration output lights for mirror
Beam, 11 cross-couplings vibration output beam, 20 regular vibration optical axises, 21 regular vibration output beam sizes, 30 cross-couplings light
Axle, 40 semicondcutor laser units.
Claims (6)
1. a kind of semicondcutor laser unit, it has：
Outside laser resonator, it includes waveguide dispersive elements and partially reflecting mirror, and the waveguide dispersive elements are made from multiple
The beam combination of luminous point, the illuminated light beam after the waveguide dispersive elements of the partially reflecting mirror, by the light beam
A part export to outside, remaining light beam is reflected, the outside laser resonator will be produced from the plurality of luminous point
The light beam of raw multiple wavelength is overlapped using the wavelength dispersion of the waveguide dispersive elements, will be by the plurality of
The regular vibration light beam that each self-oscillation of luminous point is formed is exported to outside；And
Angle enlarged elements, it is configured between the waveguide dispersive elements and the partially reflecting mirror, by the regular vibration
The optical axis of light beam is that regular vibration optical axis vibrates the cross-couplings oscillation light of formation from via different the plurality of luminous points
The optical axis of beam is that cross-couplings optical axis angulation expands.
2. semicondcutor laser unit according to claim 1, it is characterised in that
Between the angle enlarged elements and the partially reflecting mirror, one or more angle enlarged elements are further configured with.
3. semicondcutor laser unit according to claim 1 and 2, it is characterised in that
The angle enlarged elements are anamorphic prisms pair.
4. semicondcutor laser unit according to any one of claim 1 to 3, it is characterised in that
Coupling optical system is configured between the plurality of luminous point and the waveguide dispersive elements, the coupling optical system will
The light beam from the plurality of luminous point is overlapped on the waveguide dispersive elements.
5. semicondcutor laser unit according to claim 4, it is characterised in that
Between the coupling optical system and the plurality of luminous point, the waveguide dispersive elements and the angle enlarged elements
Between and the coupling optical system and the waveguide dispersive elements between at least one of position be configured with diaphragm, should
Diaphragm is blocked to cross-couplings vibration light beam to injecting for the waveguide dispersive elements.
6. semicondcutor laser unit according to claim 5, it is characterised in that
Beam sizes of the aperture of the diaphragm more than the regular vibration light beam.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-151641 | 2014-07-25 | ||
| JP2014151641 | 2014-07-25 | ||
| PCT/JP2015/071097 WO2016013653A1 (en) | 2014-07-25 | 2015-07-24 | Semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106575853A true CN106575853A (en) | 2017-04-19 |
Family
ID=55163175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580040673.2A Pending CN106575853A (en) | 2014-07-25 | 2015-07-24 | Semiconductor laser device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20170207605A1 (en) |
| JP (1) | JP6289640B2 (en) |
| CN (1) | CN106575853A (en) |
| DE (1) | DE112015003430T5 (en) |
| WO (1) | WO2016013653A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110383607A (en) * | 2017-03-09 | 2019-10-25 | 三菱电机株式会社 | Wavelength Coupled Laser Device |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7256352B2 (en) * | 2017-11-29 | 2023-04-12 | 日亜化学工業株式会社 | Light source device |
| JP7090238B2 (en) | 2018-04-27 | 2022-06-24 | 日亜化学工業株式会社 | Light source module |
| DE112019003830T5 (en) * | 2018-07-30 | 2021-04-15 | Panasonic Corporation | Semiconductor light emitting device and external resonance type laser device |
| CN208753726U (en) * | 2018-09-13 | 2019-04-16 | 上海高意激光技术有限公司 | Unsteady cavity spectrum beam combination device |
| JP6696629B1 (en) * | 2018-10-22 | 2020-05-20 | 三菱電機株式会社 | Laser equipment |
| JP6910555B2 (en) * | 2019-03-29 | 2021-07-28 | 三菱電機株式会社 | Semiconductor laser device |
| WO2021049509A1 (en) * | 2019-09-13 | 2021-03-18 | パナソニック株式会社 | Semiconductor laser device |
| JP2023044115A (en) * | 2021-09-17 | 2023-03-30 | 日亜化学工業株式会社 | laser device |
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| US6665471B1 (en) * | 2001-08-13 | 2003-12-16 | Nlight Photonics Corporation | System and method for optimizing the performance of multiple gain element laser |
| DE102004053137A1 (en) * | 2004-10-29 | 2006-05-11 | Raab, Volker, Dr. | Multispectral laser with multiple gain elements |
| JP5228616B2 (en) * | 2008-05-20 | 2013-07-03 | 横河電機株式会社 | Tunable light source |
| JP5637474B2 (en) * | 2009-12-30 | 2014-12-10 | 国立大学法人 千葉大学 | Beam filter, laser chip including the same, and external cavity laser |
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2015
- 2015-07-24 WO PCT/JP2015/071097 patent/WO2016013653A1/en active Application Filing
- 2015-07-24 JP JP2016535990A patent/JP6289640B2/en active Active
- 2015-07-24 CN CN201580040673.2A patent/CN106575853A/en active Pending
- 2015-07-24 US US15/315,436 patent/US20170207605A1/en not_active Abandoned
- 2015-07-24 DE DE112015003430.7T patent/DE112015003430T5/en not_active Withdrawn
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6192062B1 (en) * | 1998-09-08 | 2001-02-20 | Massachusetts Institute Of Technology | Beam combining of diode laser array elements for high brightness and power |
| CN1498447A (en) * | 2002-02-21 | 2004-05-19 | ���ṫ˾ | Semiconductor light emitting device and optical disk device using same |
| US20060092995A1 (en) * | 2004-11-01 | 2006-05-04 | Chromaplex, Inc. | High-power mode-locked laser system |
| CN101154794A (en) * | 2006-09-26 | 2008-04-02 | 夏普株式会社 | Semiconductor laser device, its manufacturing method, and optical pickup device using the device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110383607A (en) * | 2017-03-09 | 2019-10-25 | 三菱电机株式会社 | Wavelength Coupled Laser Device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2016013653A1 (en) | 2017-04-27 |
| WO2016013653A1 (en) | 2016-01-28 |
| DE112015003430T5 (en) | 2017-04-27 |
| JP6289640B2 (en) | 2018-03-07 |
| US20170207605A1 (en) | 2017-07-20 |
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